CN105186282B - 高稳频可调谐窄线宽激光器及使用方法 - Google Patents
高稳频可调谐窄线宽激光器及使用方法 Download PDFInfo
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CN105896309A (zh) * | 2016-06-13 | 2016-08-24 | 深圳新飞通光电子技术有限公司 | 双向输出的dfb可调谐激光模块及其相干光传输系统 |
CN106323265B (zh) * | 2016-08-23 | 2020-01-14 | 中国航空工业集团公司西安飞行自动控制研究所 | 窄线宽惯导级闭环光子晶体光纤陀螺及窄线宽激光器 |
CN108519163A (zh) * | 2018-04-16 | 2018-09-11 | 浙江大学 | 基于啁啾测量反馈控制的模拟直接调制光载射频链路装置 |
CN109752033B (zh) * | 2019-02-22 | 2024-01-30 | 上海交通大学 | 高精度光纤光栅应变测量系统 |
CN110112652A (zh) * | 2019-05-16 | 2019-08-09 | 中国科学院半导体研究所 | 外腔可调谐激光器及波长调谐方法 |
CN113097860B (zh) * | 2021-03-10 | 2022-09-13 | 浙江大学 | 半导体激光器驱动电流电路及输出频率实时反馈方法 |
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CN102364770A (zh) * | 2011-10-19 | 2012-02-29 | 烽火通信科技股份有限公司 | 基于并联标准具的激光波长精密控制方法 |
US8885678B1 (en) * | 2012-05-24 | 2014-11-11 | Redfern Integrated Optics, Inc. | Ultra-low frequency noise external cavity semiconductor laser with integrated waveguide grating and modulation section electronically stabilized by dual frequency feedback control circuitry |
CN202917803U (zh) * | 2012-11-29 | 2013-05-01 | 合肥知常光电科技有限公司 | 一种可调谐窄线宽皮秒脉冲激光器 |
CN103337786B (zh) * | 2013-05-29 | 2015-12-23 | 中国科学院半导体研究所 | 可调谐激光器模块 |
CN203491504U (zh) * | 2013-09-23 | 2014-03-19 | 南京威宁锐克信息技术有限公司 | 可调谐激光器 |
JP2015076467A (ja) * | 2013-10-08 | 2015-04-20 | Nttエレクトロニクス株式会社 | 中赤外レーザ光源 |
CN104821486A (zh) * | 2015-04-13 | 2015-08-05 | 中国科学院上海光学精密机械研究所 | 高精度频率线性调谐窄线宽激光器装置 |
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Effective date of registration: 20210714 Address after: 255086 Building 9, MEMS Industrial Park, 158 Zhongrun Avenue, high tech Zone, Zibo City, Shandong Province Patentee after: Shandong zhongkejilian Optoelectronic Integrated Technology Research Institute Co.,Ltd. Address before: 100000 20213, 145 Tongle Road, nandulehe Town, Pinggu District, Beijing (cluster registration) Patentee before: Beijing Jialun Technology Co.,Ltd. Effective date of registration: 20210714 Address after: 100000 20213, 145 Tongle Road, nandulehe Town, Pinggu District, Beijing (cluster registration) Patentee after: Beijing Jialun Technology Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences |