CN105185289A - Grid driving circuit, display panel shutdown method, display panel and display apparatus - Google Patents
Grid driving circuit, display panel shutdown method, display panel and display apparatus Download PDFInfo
- Publication number
- CN105185289A CN105185289A CN201510556537.0A CN201510556537A CN105185289A CN 105185289 A CN105185289 A CN 105185289A CN 201510556537 A CN201510556537 A CN 201510556537A CN 105185289 A CN105185289 A CN 105185289A
- Authority
- CN
- China
- Prior art keywords
- voltage
- driver element
- display panel
- working signal
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention provides a grid driving circuit, a display panel shutdown method, a display panel and a display apparatus. The grid driving circuit comprises a signal input unit, a driving unit and a selection unit; the signal input unit comprises an input signal end and a first high-voltage end; the driving unit is connected with the grid of each film transistor in the display panel; the grid driving circuit further comprises a selection unit, and the selection unit is connected between the signal input unit and the driving unit for gating the input signal end with the driving unit or gating the first high-voltage end with the driving unit; in the first phase of shutdown of the display panel, the selection unit gates the input signal end with the driving unit; and in the second phase of the shutdown of the display panel, the selection unit gates the first high-voltage end with the driving unit. The grid driving circuit can reduce impact currents during the shutdown and prevent Xao motion from being repeatedly executed.
Description
Technical field
The present invention relates to display technique field, particularly, relate to a kind of gate driver circuit, display panel closedown method, display panel and display device.
Background technology
Existing display panel when shutting down, general execution Xao action, that is: driver element can export cut-in voltage to all grid lines, and the thin film transistor (TFT) in all pixels is opened; Electric charge in pixel can be discharged completely like this, avoid producing direct current effect because of electric charge long-term existence, cause the problem such as image retention, flicker (Flicker).
Particularly, when display panel shuts down, the magnitude of voltage of its working signal (i.e. Vin signal) progressively reduces.Detecting voltage module (being commonly referred to as Xao module or Xon module) detects the driving voltage (its magnitude of voltage is equal to Vin signal) that driver element exports according to Vin signal, when described driving voltage is reduced to predetermined value, one high voltage signal (i.e. VGH signal) is inputed to driver element, driver element generates drive singal (its magnitude of voltage is equal to VGH signal) according to described VGH signal, described drive singal is input in each grid line be connected with driver element, the grid of each row thin film transistor (TFT) is opened, thus the electric charge in each pixel is discharged.
But in practice, following problem can be there is when display panel shuts down:
First, before execution Xao action, the voltage of the grid of most of thin film transistor (TFT) is VOFF, and its magnitude of voltage is generally ﹣ about 8V, and when performing Xao action, its grid voltage can be promoted to VGH, is approximately 30V; Obviously, as shown in Figure 1, in the moment of Xao action, the change in voltage comparatively large (the Gate signal intensity see in Fig. 1) of thin-film transistor gate, larger dash current (i.e. Ion in Fig. 1) can be produced like this, easily cause conductor terminal (Lead) to burn.
Secondly, as shown in Figure 2, owing to inputing to the voltage change range large (becoming VGH from Vin) of driver element, Vin signal there will be bounce-back (see in Fig. 2 by part that dotted-line ellipse is irised out); Like this, when shutting down, Xao module repeatedly can detect scheduled voltage, Xao action repeatedly, is repeatedly performed, in this process, multiple large dash current (Ion and Ioff as in Fig. 2) can be produced, increase further conductor terminal by the probability that burns and risk.
Summary of the invention
The present invention is intended at least to solve one of technical matters existed in prior art, propose a kind of gate driver circuit, display panel closedown method, display panel and display device, dash current when it can reduce shutdown, conductor terminal is avoided to burn, and avoid the first working signal to rebound when shutting down, and then avoid Xao action by repeated multiple times execution.
Thering is provided a kind of gate driver circuit for realizing object of the present invention, comprising signal input unit and driver element; Described signal input unit is used for driver element input signal, and it comprises the input signal end of output first working signal and exports the first high-tension first high voltage end; Described driver element is connected with the grid of thin film transistor (TFT) each in display panel, its signal for inputting according to described signal input unit, generates drive singal, inputs the grid of each thin film transistor (TFT), described thin film transistor (TFT) is opened or closes; Described gate driver circuit also comprises selection unit, and described selection unit is connected between described signal input unit and driver element, for by described input signal end and driver element gating, or by described first high voltage end and described driver element gating; In the first stage of display panel shutdown, described selection unit is by described input signal end and described driver element gating, described driver element generates the drive singal identical with described first working signal according to described first working signal, be input in the grid of each thin film transistor (TFT), draw high voltage to the first working signal of each grid; In the subordinate phase of display panel shutdown, described selection unit is by described first high voltage end and described driver element gating, described driver element generates the drive singal identical with described first high voltage according to described first high voltage, be input in the grid of each thin film transistor (TFT), draw high voltage to the first high voltage of each grid further.
Wherein, described selection unit comprises the first detecting voltage module, the second detecting voltage module, the first working signal gating module and the first high voltage gating module; When display panel shuts down, whether the magnitude of voltage that described first detecting voltage module and the second detecting voltage module detect described first working signal is respectively reduced to its respective detecting voltage, wherein, the detecting voltage of the first detecting voltage module is greater than the detecting voltage of the second detecting voltage module; When the magnitude of voltage that described first detecting voltage module detects the first working signal is reduced to its detecting voltage, described first working signal gating module is by described input signal end and described driver element gating; When the magnitude of voltage that described second detecting voltage module detects the first working signal is reduced to its detecting voltage further, described first high voltage gating module is by described first high voltage end and driver element gating.
Wherein, described first detecting voltage module is also connected with described driver element.
Wherein, described first working signal gating module comprises the first transistor and transistor seconds; Described the first transistor is N-type transistor, and it controls pole and described second detecting voltage model calling, and source electrode is connected with input signal end, and drain electrode is connected with the source electrode of transistor seconds; Described transistor seconds is P-type crystal pipe, and it controls pole and described first detecting voltage model calling, and drain electrode is connected with driver element.
Wherein, described first high voltage gating module comprises the 4th transistor; Described 4th transistor is P-type crystal pipe, and it controls pole and described second detecting voltage model calling, and source electrode is connected with the first high voltage end, and drain electrode is connected with driver element.
Wherein, described first high voltage gating module also comprises third transistor; Described third transistor is N-type transistor, and it controls pole and described first detecting voltage model calling, and source electrode is connected with the first high voltage end, and drain electrode is connected with driver element.
Wherein, described first high voltage is 30V; During display panel work, the voltage of the first working signal is 12V; The detecting voltage of described first detecting voltage module is 9V.
As another technical scheme, the present invention also provides a kind of display panel closedown method, and it comprises:
Whether the magnitude of voltage detecting the first working signal is reduced to the first detecting voltage;
At the voltage of the first working signal to when being reduced to the first detecting voltage, first working signal is inputed to driver element, driver element generates the drive singal identical with the first working signal, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first working signal;
Whether the magnitude of voltage detecting the first working signal is reduced to the second detecting voltage;
At the voltage of the first working signal to when being reduced to the second detecting voltage, first high voltage is inputed to driver element, driver element generates the drive singal identical with the first high voltage, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first high voltage.
Wherein, described first working signal voltage is before being powered off 12V; Described first detecting voltage is 9V; Described first high voltage is 30V.
As another technical scheme, the present invention also provides a kind of display panel, and it comprises above-mentioned gate driver circuit provided by the invention.
As another technical scheme, the present invention also provides a kind of display device, and it comprises above-mentioned display panel provided by the invention.
The present invention has following beneficial effect:
Gate driver circuit provided by the invention, the process that display panel shuts down is divided into two stages, in the first stage, promote voltage to the first working signal of each grid of display panel, subordinate phase is on the basis of first stage, the voltage of each grid of display panel is promoted to the first high voltage further, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down like this, the dash current produced due to change in voltage is reduced, avoids conductor terminal (Lead) to be burnt., in the first stage of display panel shutdown, the first working signal is inputed in driver element meanwhile, and then generate drive singal, input in the grid of each thin film transistor (TFT); In the case, the load of the first working signal is comparatively large, makes its magnitude of voltage be difficult to rebound, and, also can be dragged down further, so just overcome action by repeatedly, the problem of multiple exercise.
Display panel closedown method provided by the invention, first it promote voltage to the first working signal of each grid of display panel, then further the voltage of each grid of display panel is promoted to the first high voltage further, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down like this, the dash current produced due to change in voltage is reduced, avoids conductor terminal to be burnt.Simultaneously, because the first working signal inputs in driver element, and then generation drive singal, input in the grid of each thin film transistor (TFT), make the load of the first working signal comparatively large, thus make the first working signal be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
Display panel provided by the invention, it adopts above-mentioned gate driver circuit provided by the invention, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down, the dash current produced is reduced, avoid conductor terminal to be burnt due to change in voltage.Meanwhile, the load that can also make the first working signal is comparatively large, thus makes the first working signal be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
Display device provided by the invention, it adopts above-mentioned display panel provided by the invention, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down, the dash current produced is reduced, avoid conductor terminal to be burnt due to change in voltage.Meanwhile, the load that can also make the first working signal is comparatively large, thus makes the first working signal be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for instructions, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
The schematic diagram of dash current when Fig. 1 is shutdown;
Fig. 2 is that Vin signal rebounds the schematic diagram causing Xao action repeatedly to perform;
Fig. 3 is the schematic diagram of gate driver circuit provided by the invention in its embodiment;
The schematic diagram of each signal when Fig. 4 is gate driver circuit provided by the invention shutdown.
Wherein, Reference numeral:
1: signal input unit; 2: driver element; 3: selection unit; 30: the first detecting voltage modules; 31: the second detecting voltage modules; 32: the first working signal gating module; 33: the first high voltage gating module; Vin: the first working signal/input signal end; VGH: the first high voltage/the first high voltage end; M1: the first transistor; M2: transistor seconds; M3: third transistor; M4: the four transistor.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
The invention provides a kind of embodiment of gate driver circuit.Fig. 3 is the schematic diagram of gate driver circuit provided by the invention in its embodiment; The schematic diagram of each signal when Fig. 4 is gate driver circuit provided by the invention shutdown.As shown in Figures 3 and 4, in the present embodiment, described gate driver circuit comprises signal input unit 1 and driver element 2; Described signal input unit 1 is for driver element 2 input signal, and it comprises the input signal end Vin of output first working signal Vin and exports the first high voltage end VGH of the first high voltage VGH; Described driver element 2 is connected with the grid of thin film transistor (TFT) each in display panel, and it, for the signal according to described signal input unit 1 input, generates drive singal, input the grid of each thin film transistor (TFT), described thin film transistor (TFT) is opened or closes; Described gate driver circuit also comprises selection unit 3, described selection unit 3 is connected between described signal input unit 1 and driver element 2, for by described input signal end Vin and driver element 2 gating, or by described first high voltage end VGH and described driver element 2 gating.
In the first stage of display panel shutdown, described selection unit 3 is by described input signal end Vin and described driver element 2 gating, described driver element 2 generates the drive singal identical with described first working signal Vin according to described first working signal Vin, be input in the grid of each thin film transistor (TFT), draw high voltage to the first working signal Vin of each grid; In the subordinate phase of display panel shutdown, described selection unit 3 is by described first high voltage end VGH and described driver element 2 gating, described driver element 2 generates the drive singal identical with described first high voltage VGH according to described first high voltage VGH, be input in the grid of each thin film transistor (TFT), draw high voltage to the first high voltage VGH of each grid further.
Display panel is when showing, and the voltage of the first working signal Vin can maintain about 12V; When shutting down, the magnitude of voltage of the first working signal Vin progressively can be reduced to 0V; The magnitude of voltage of the first high voltage VGH is higher than the maximal value (i.e. the magnitude of voltage of the first working signal Vin when display panel shows) of the first working signal Vin, and its magnitude of voltage is generally about 30V.
In present embodiment, the process that display panel shuts down is divided into two stages, in the first stage, promote voltage to the first working signal Vin of each grid of display panel, subordinate phase is on the basis of first stage, the voltage of each grid of display panel is promoted to the first high voltage VGH further, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down like this, the dash current produced due to change in voltage is reduced, avoids conductor terminal (Lead) to be burnt.
, in the first stage of display panel shutdown, the first working signal Vin is inputed in driver element 2 meanwhile, and then generate drive singal, input in the grid of each thin film transistor (TFT); In the case, the load of the first working signal Vin is comparatively large, makes its magnitude of voltage be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
Described selection unit 3 specifically comprises the first detecting voltage module 30, second detecting voltage module 31, first working signal gating module 32 and the first high voltage gating module 33.When display panel shuts down, whether the magnitude of voltage that described first detecting voltage module 30 and the second detecting voltage module 31 detect described first working signal Vin is respectively reduced to its respective detecting voltage, wherein, the detecting voltage of the first detecting voltage module 30 is greater than the detecting voltage of the second detecting voltage module 31; Particularly, the detecting voltage of described first detecting voltage module 30 is specifically as follows about 9V, and the detecting voltage of described second detecting voltage module 31 can be 6 ~ 7V.When the magnitude of voltage that described first detecting voltage module 30 detects the first working signal Vin is reduced to its detecting voltage, described first working signal gating module 32 is by described input signal end Vin and described driver element 2 gating; When the magnitude of voltage that described second detecting voltage module 31 detects the first working signal Vin is reduced to its detecting voltage further, described first high voltage gating module 33 is by described first high voltage end VGH and driver element 2 gating.
Described first working signal gating module 32 specifically comprises the first transistor M1 and transistor seconds M2; Described the first transistor M1 is N-type transistor, and it controls pole and is connected with described second detecting voltage module 31, and source electrode is connected with input signal end Vin, and drain electrode is connected with the source electrode of transistor seconds M2; Described transistor seconds M2 is P-type crystal pipe, and it controls pole and is connected with described first detecting voltage module 30, and drain electrode is connected with driver element 2.
Described first high voltage gating module 33 comprises the 4th transistor M4; Described 4th transistor M4 is P-type crystal pipe, and it controls pole and is connected with described second detecting voltage module 31, and source electrode is connected with the first high voltage end VGH, and drain electrode is connected with driver element 2.Described first high voltage gating module 33 can also comprise third transistor M3; Described third transistor M3 is N-type transistor, and it controls pole and is connected with described first detecting voltage module 30, and source electrode is connected with the first high voltage end VGH, and drain electrode is connected with driver element 2.
The output valve of table 1 first detecting voltage module, the second detecting voltage module and driver element
| Export truth table | Before start | During work | Shutdown 1 | Shutdown 2 |
| First detecting voltage module | 0 | 1 | 0 | 0 |
| Second detecting voltage module | 0 | 1 | 1 | 0 |
| Driver element | VGH | VGH | Vin | VGH |
Please refer to table 1, in table 1,0 represents that the magnitude of voltage of the first working signal Vin is less than or equal to (the first detecting voltage module 30 or the second detecting voltage module 31) detecting voltage, and 1 represents that the magnitude of voltage of the first working signal Vin is higher than (the first detecting voltage module 30 or the second detecting voltage module 31) detecting voltage.
Particularly, before display panel start, the magnitude of voltage of the first working signal Vin is 0, and in the case, it is less than the detecting voltage of the first detecting voltage module 30, second detecting voltage module 31, in the case, the first transistor M1 and third transistor M3 closes, and transistor seconds M2 and the 4th transistor M4 opens, thus, first high voltage VGH can be input in driver element 2 through the 4th transistor M4, and driver element 2 also can export the drive singal being equal to VGH.
And operationally, the magnitude of voltage of the first working signal Vin is greater than the detecting voltage of the first detecting voltage module 30 and the second detecting voltage module 31, in the case, the first transistor M1 and third transistor M3 opens, transistor seconds M2 and the 4th transistor M4 closes, thus the first high voltage VGH can be input in driver element 2 through third transistor M3, driver element 2 also can export the drive singal being equal to VGH.
In the first stage of shutdown, the magnitude of voltage of the first working signal Vin is reduced to the detecting voltage of the first detecting voltage module 30, and meanwhile, it is also greater than the detecting voltage of the second detecting voltage module 31; Now, the first transistor M1 and transistor seconds M2 opens, and third transistor M3 and the 4th transistor M4 closes, thus, first working signal Vin can be input in driver element 2 through the first transistor M1, transistor seconds M2, and driver element 2 also can export the drive singal being equal to Vin.
In the subordinate phase of shutdown, the magnitude of voltage of the first working signal Vin is reduced to the detecting voltage of the second detecting voltage module 31; Now, the first transistor M1 closes, and the 4th transistor M4 opens, and therefore, the first high voltage VGH can be input in driver element 2 through the 4th transistor M4, and driver element 2 also can export the drive singal being equal to VGH.
As shown in Figure 3, described first detecting voltage module 30 is also connected with described driver element 2.Like this when the magnitude of voltage that the first detecting voltage module 30 detects the first working signal Vin drops to its detecting voltage, first detecting voltage module 30 is to driver element 2 transmission of signal, this signal, as initial order, makes driver element 2 prepare to export to each grid the drive singal being equal to Vin.
Gate driver circuit provided by the invention, the process that display panel shuts down is divided into two stages, in the first stage, promote voltage to the first working signal Vin of each grid of display panel, subordinate phase is on the basis of first stage, the voltage of each grid of display panel is promoted to the first high voltage VGH further, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down like this, the dash current produced due to change in voltage is reduced, avoids conductor terminal (Lead) to be burnt., in the first stage of display panel shutdown, the first working signal Vin is inputed in driver element 2 meanwhile, and then generate drive singal, input in the grid of each thin film transistor (TFT); In the case, the load of the first working signal Vin is comparatively large, makes its magnitude of voltage be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
The present invention also provides a kind of embodiment of display panel closedown method.In the present embodiment, the closedown method of described display panel comprises the following steps S1 ~ S4:
S1, whether the magnitude of voltage detecting the first working signal Vin is reduced to the first detecting voltage.
Particularly, the initial voltage value of the first working signal Vin, namely its voltage when display panel works, before shutdown can for 12V.
S2, at the voltage of the first working signal Vin to when being reduced to the first detecting voltage, first working signal Vin is inputed to driver element, driver element generates the drive singal identical with the first working signal Vin, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first working signal Vin.
Particularly, the first detecting voltage is less than the initial voltage of the first working signal Vin, and it can be 9V.
S3, whether the magnitude of voltage detecting the first working signal Vin is reduced to the second detecting voltage.
Particularly, described second detecting voltage is less than the first detecting voltage, and it can be 6 ~ 7V.
S4, at the voltage of the first working signal Vin to when being reduced to the second detecting voltage, first high voltage VGH is inputed to driver element, driver element generates the drive singal identical with the first high voltage VGH, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first high voltage VGH.
Particularly, described first high voltage VGH can be 30V.
In the present embodiment, first voltage to the first working signal Vin of each grid of display panel is promoted, then further the voltage of each grid of display panel is promoted to the first high voltage VGH further, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down like this, the dash current produced due to change in voltage is reduced, avoids conductor terminal to be burnt.Simultaneously, because the first working signal Vin inputs in driver element, and then generation drive singal, input in the grid of each thin film transistor (TFT), make the load of the first working signal Vin comparatively large, thus make the first working signal Vin be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
The present invention also provides a kind of embodiment of display panel.In the present embodiment, described display panel comprises the gate driver circuit in the above-mentioned embodiment of the present invention.
Display panel provided by the invention, it adopts the gate driver circuit in the above-mentioned embodiment of the present invention, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down, the dash current produced due to change in voltage is reduced, avoids conductor terminal to be burnt.Meanwhile, the load that can also make the first working signal Vin is comparatively large, thus makes the first working signal Vin be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
The present invention also provides a kind of embodiment of display device.In the present embodiment, described display device comprises the display panel in the above-mentioned embodiment of the present invention.
Display device provided by the invention, it adopts the display panel in the above-mentioned embodiment of the present invention, the amplitude of variation of the voltage of the grid being input to thin film transistor (TFT) in each pixel of display panel can be slowed down, the dash current produced is reduced, avoid conductor terminal to be burnt due to change in voltage.Meanwhile, the load that can also make the first working signal Vin is comparatively large, thus makes the first working signal Vin be difficult to rebound, and, also can be dragged down further, so just overcome Xao action by repeatedly, the problem of multiple exercise.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a gate driver circuit, comprises signal input unit and driver element; Described signal input unit is used for driver element input signal, and it comprises the input signal end of output first working signal and exports the first high-tension first high voltage end; Described driver element is connected with the grid of thin film transistor (TFT) each in display panel, its signal for inputting according to described signal input unit, generates drive singal, inputs the grid of each thin film transistor (TFT), described thin film transistor (TFT) is opened or closes; It is characterized in that, described gate driver circuit also comprises selection unit, described selection unit is connected between described signal input unit and driver element, for by described input signal end and driver element gating, or by described first high voltage end and described driver element gating;
In the first stage of display panel shutdown, described selection unit is by described input signal end and described driver element gating, described driver element generates the drive singal identical with described first working signal according to described first working signal, be input in the grid of each thin film transistor (TFT), draw high voltage to the first working signal of each grid;
In the subordinate phase of display panel shutdown, described selection unit is by described first high voltage end and described driver element gating, described driver element generates the drive singal identical with described first high voltage according to described first high voltage, be input in the grid of each thin film transistor (TFT), draw high voltage to the first high voltage of each grid further.
2. gate driver circuit according to claim 1, is characterized in that, described selection unit comprises the first detecting voltage module, the second detecting voltage module, the first working signal gating module and the first high voltage gating module;
When display panel shuts down, whether the magnitude of voltage that described first detecting voltage module and the second detecting voltage module detect described first working signal is respectively reduced to its respective detecting voltage, wherein, the detecting voltage of the first detecting voltage module is greater than the detecting voltage of the second detecting voltage module;
When the magnitude of voltage that described first detecting voltage module detects the first working signal is reduced to its detecting voltage, described first working signal gating module is by described input signal end and described driver element gating; When the magnitude of voltage that described second detecting voltage module detects the first working signal is reduced to its detecting voltage further, described first high voltage gating module is by described first high voltage end and driver element gating.
3. gate driver circuit according to claim 2, is characterized in that, described first detecting voltage module is also connected with described driver element.
4. gate driver circuit according to claim 2, is characterized in that, described first working signal gating module comprises the first transistor and transistor seconds;
Described the first transistor is N-type transistor, and it controls pole and described second detecting voltage model calling, and source electrode is connected with input signal end, and drain electrode is connected with the source electrode of transistor seconds;
Described transistor seconds is P-type crystal pipe, and it controls pole and described first detecting voltage model calling, and drain electrode is connected with driver element.
5. gate driver circuit according to claim 2, is characterized in that, described first high voltage gating module comprises the 4th transistor; Described 4th transistor is P-type crystal pipe, and it controls pole and described second detecting voltage model calling, and source electrode is connected with the first high voltage end, and drain electrode is connected with driver element.
6. gate driver circuit according to claim 5, is characterized in that, described first high voltage gating module also comprises third transistor; Described third transistor is N-type transistor, and it controls pole and described first detecting voltage model calling, and source electrode is connected with the first high voltage end, and drain electrode is connected with driver element.
7. gate driver circuit according to claim 1, is characterized in that, described first high voltage is 30V;
During display panel work, the voltage of the first working signal is 12V;
The detecting voltage of described first detecting voltage module is 9V.
8. a display panel closedown method, is characterized in that, comprising:
Whether the magnitude of voltage detecting the first working signal is reduced to the first detecting voltage;
At the voltage of the first working signal to when being reduced to the first detecting voltage, first working signal is inputed to driver element, driver element generates the drive singal identical with the first working signal, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first working signal;
Whether the magnitude of voltage detecting the first working signal is reduced to the second detecting voltage;
At the voltage of the first working signal to when being reduced to the second detecting voltage, first high voltage is inputed to driver element, driver element generates the drive singal identical with the first high voltage, input to the grid of each thin film transistor (TFT) in display panel, the voltage of the grid of each thin film transistor (TFT) is pulled up to the first high voltage.
9. display panel closedown method according to claim 8, is characterized in that, described first working signal voltage is before being powered off 12V;
Described first detecting voltage is 9V;
Described first high voltage is 30V.
10. a display panel, is characterized in that, comprises the gate driver circuit described in claim 1 ~ 7 any one.
11. 1 kinds of display device, is characterized in that, comprise display panel according to claim 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510556537.0A CN105185289B (en) | 2015-09-02 | 2015-09-02 | Gate driving circuit, display panel closedown method, display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510556537.0A CN105185289B (en) | 2015-09-02 | 2015-09-02 | Gate driving circuit, display panel closedown method, display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105185289A true CN105185289A (en) | 2015-12-23 |
| CN105185289B CN105185289B (en) | 2018-02-13 |
Family
ID=54907324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510556537.0A Active CN105185289B (en) | 2015-09-02 | 2015-09-02 | Gate driving circuit, display panel closedown method, display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105185289B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105632435A (en) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | Residual image circuit for switching on/off and method for removing residual image of switching on/off |
| CN105788560A (en) * | 2016-05-26 | 2016-07-20 | 深圳市华星光电技术有限公司 | Direct-current voltage switching circuit and liquid crystal display device |
| CN111179873A (en) * | 2020-02-19 | 2020-05-19 | 京东方科技集团股份有限公司 | Shutdown noise reduction circuit, shutdown noise reduction chip and display device |
| WO2021056931A1 (en) * | 2019-09-25 | 2021-04-01 | 武汉华星光电半导体显示技术有限公司 | Drive circuit, display panel, and display module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040113880A1 (en) * | 2002-12-02 | 2004-06-17 | Takashi Honda | Driving circuit for liquid crystal display |
| CN101188095A (en) * | 2007-12-20 | 2008-05-28 | 友达光电股份有限公司 | LCD and residual shadow attenuation method |
| CN101667387A (en) * | 2009-09-30 | 2010-03-10 | 友达光电股份有限公司 | Display device and method for eliminating shutdown ghost in same |
| CN101826309A (en) * | 2009-03-06 | 2010-09-08 | 华映视讯（吴江）有限公司 | Liquid crystal display with shutdown afterimage elimination function |
| CN102364571A (en) * | 2011-09-15 | 2012-02-29 | 友达光电股份有限公司 | Gate driving device and ghost eliminating method |
| CN103236234A (en) * | 2013-04-28 | 2013-08-07 | 合肥京东方光电科技有限公司 | Grid driver and display device |
-
2015
- 2015-09-02 CN CN201510556537.0A patent/CN105185289B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040113880A1 (en) * | 2002-12-02 | 2004-06-17 | Takashi Honda | Driving circuit for liquid crystal display |
| CN101188095A (en) * | 2007-12-20 | 2008-05-28 | 友达光电股份有限公司 | LCD and residual shadow attenuation method |
| CN101826309A (en) * | 2009-03-06 | 2010-09-08 | 华映视讯（吴江）有限公司 | Liquid crystal display with shutdown afterimage elimination function |
| CN101667387A (en) * | 2009-09-30 | 2010-03-10 | 友达光电股份有限公司 | Display device and method for eliminating shutdown ghost in same |
| CN102364571A (en) * | 2011-09-15 | 2012-02-29 | 友达光电股份有限公司 | Gate driving device and ghost eliminating method |
| CN103236234A (en) * | 2013-04-28 | 2013-08-07 | 合肥京东方光电科技有限公司 | Grid driver and display device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105632435A (en) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | Residual image circuit for switching on/off and method for removing residual image of switching on/off |
| CN105632435B (en) * | 2016-01-05 | 2018-06-05 | 京东方科技集团股份有限公司 | Switching on and shutting down image retention eliminates circuit and the method for eliminating switching on and shutting down image retention |
| US10325563B2 (en) | 2016-01-05 | 2019-06-18 | Boe Technology Group Co., Ltd. | Circuit and method for eliminating image sticking during power-on and power-off |
| CN105788560A (en) * | 2016-05-26 | 2016-07-20 | 深圳市华星光电技术有限公司 | Direct-current voltage switching circuit and liquid crystal display device |
| CN105788560B (en) * | 2016-05-26 | 2019-01-22 | 深圳市华星光电技术有限公司 | DC voltage converting circuit and liquid crystal display device |
| WO2021056931A1 (en) * | 2019-09-25 | 2021-04-01 | 武汉华星光电半导体显示技术有限公司 | Drive circuit, display panel, and display module |
| CN111179873A (en) * | 2020-02-19 | 2020-05-19 | 京东方科技集团股份有限公司 | Shutdown noise reduction circuit, shutdown noise reduction chip and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105185289B (en) | 2018-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9958985B2 (en) | Touch display apparatus and shift register thereof | |
| CN102867491B (en) | LCD (Liquid Crystal Display) panel drive circuit and method as well as display unit | |
| CN104517577B (en) | Liquid crystal indicator and gate drivers thereof | |
| CN104157260B (en) | Gate driver circuit based on IGZO processing procedure | |
| CN104505036B (en) | Gate driver circuit | |
| CN105185289A (en) | Grid driving circuit, display panel shutdown method, display panel and display apparatus | |
| US9246329B2 (en) | Electrostatic discharge protection circuit and display device including the same | |
| CN107731186A (en) | A kind of control circuit, control method and display device | |
| CN104269148B (en) | liquid crystal driving circuit, liquid crystal driving method and liquid crystal display device | |
| CN103198804B (en) | A kind of liquid crystal indicator and driving method thereof | |
| CN106920498B (en) | GIP circuit and its driving method and panel display apparatus | |
| CN104409058A (en) | Scanning drive circuit | |
| CN105139816A (en) | Gate drive circuit | |
| CN105139822A (en) | Shift register and driving method thereof, and gate drive circuit | |
| CN104464662A (en) | GOA circuit based on low-temperature polycrystalline silicon semiconductor thin film transistor | |
| CN107610666A (en) | Eliminate the circuit and method of power-off ghost shadow | |
| CN105185332A (en) | Liquid crystal display panel, driving circuit thereof and manufacturing method thereof | |
| CN104036716A (en) | Drive and control circuit and display device of display panel | |
| CN103544912A (en) | Panel detection device and display panel | |
| CN102136257B (en) | Power-off control circuit adapted in a LCD panel | |
| CN105895003A (en) | Shift register, driving method thereof, and driving circuit thereof | |
| JP2018503109A (en) | GOA circuit based on low temperature polysilicon semiconductor thin film transistor | |
| CN104517578B (en) | Display device and grid drive circuit thereof | |
| CN104635396A (en) | Pixel structure, array substrate, liquid crystal panel and pixel driving method | |
| WO2017128771A1 (en) | Gate driving circuit, driving method, and display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |