CN105161554B - A kind of preparation method of P doping SiC nanometer particle film - Google Patents
A kind of preparation method of P doping SiC nanometer particle film Download PDFInfo
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- 239000002245 particle Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 29
- 239000004744 fabric Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000197 pyrolysis Methods 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 19
- 239000002105 nanoparticle Substances 0.000 claims abstract description 16
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 15
- 239000010439 graphite Substances 0.000 claims abstract description 15
- 229910000399 iron(III) phosphate Inorganic materials 0.000 claims abstract description 13
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 238000004132 cross linking Methods 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229920001709 polysilazane Polymers 0.000 claims description 7
- 239000002086 nanomaterial Substances 0.000 abstract description 7
- 230000033228 biological regulation Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 16
- 238000001816 cooling Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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Abstract
The preparation method that the present invention relates to a kind of P doping SiC nanometer particle film, belongs to technical field of nano material.Described preparation method comprises the steps: that organic precursor heat cross-linking solidifies and pulverizes, and obtains organic precursor powder；By organic precursor powder and FePO4·H2O powder mix homogeneously is placed on bottom graphite crucible, and carbon cloth substrate is placed on crucible top；Graphite crucible and carbon cloth substrate are placed in atmosphere sintering furnace together, first with the speed of 28-32 DEG C/min from room temperature to 1300-1400 DEG C, then carry out pyrolysis with the ramp of 20-25 DEG C/min to 1400-1500 DEG C；After pyrolysis, atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 12-75 DEG C/min, then cools to room temperature with the furnace, can obtain the P doping SiC nanometer particle film being substrate with carbon cloth.Preparation method of the present invention is simply controlled, has fine repeatability, it is achieved that prepare SiC nanometer particle film on carbon cloth substrate, it is achieved that the P of SiC nanometer particle film is adulterated, and achieves the Effective Regulation of SiC nanoparticle size that P is adulterated.
Description
Technical field
The present invention relates to a kind of SiC nanometer particle film, the preparation method being specifically related to a kind of P doping SiC nanometer particle film, belong to technical field of nano material.
Background technology
SiC is the third generation semi-conducting material grown up after the first generation (Si) and the second filial generation (GaAs) semi-conducting material.Compared with its conventional bulk, low-dimensional SiC nanostructured has the characteristics such as the process based prediction model of excellence, such as high energy gap, high thermal conductivity and the saturated mobility of electronics, little dielectric constant and good mechanical performance.Based on above-mentioned special performance, SiC low-dimensional nano structure is particularly well-suited to harsh working environment such as high temperature, high frequency, high-power, photoelectron and radioprotective device, in preparing high-performance composite materials, high intensity small size composite element, nano surface reinforced composite and constructing nano photoelectric device etc., there is very tempting application prospect, interesting nearly ten years.
Atom doped have proven to be a kind of effective way improving its performance by nanometer semiconductor structure is carried out.After doping, the build-in attribute of the semiconductor nano material such as performance such as optics, electricity and magnetics has significant change, and its functionalized application is significant.At present, the atom doped research of SiC low-dimensional nano structure is also achieved with certain progress, and Al, N, B etc. are different, and atom doped SiC low-dimensional nano structure has been reported.Research shows, after Al and atom N adulterate, the threshold electric field of SiC nanowire field-transmitting cathode significantly reduces, and the electron emission stability of B doping SiC nanowire negative electrode is remarkably reinforced, and a degree of blue shift occurs the photoluminescence spectrum of the SiC nanowire of Al doping.These study confirmation, and SiC low-dimensional nano structure is performance generation significant change after atom doped, is with a wide range of applications.
But, current atom doping SiC nanostructured is essentially confined to one-dimensional or two-dimensional structure, and the report about nano-particle is few, and realizing that SiC nanometer particle film is atom doped and research in the Effective Regulation of size exists very big deficiency especially.
Summary of the invention
It is an object of the invention to there are the problems referred to above for existing technology, it is proposed that SiC nanometer particle film is carried out the P of P doping and size regulation and control and adulterates the preparation method of SiC nanometer particle film by a kind of SiC of being capable of nanometer particle film growth on carbon cloth substrate and realizing.
The purpose of the present invention can be realized by following technical proposal: the preparation method of a kind of P doping SiC nanometer particle film, described preparation method comprises the steps:
Organic precursor heat cross-linking solidifies and pulverizes, and obtains organic precursor powder；
By organic precursor powder and FePO4·H2O powder mix homogeneously is placed on bottom graphite crucible, and carbon cloth substrate is placed on crucible top；
Graphite crucible and carbon cloth substrate are placed in atmosphere sintering furnace together, first with the speed of 28-32 DEG C/min from room temperature to 1300-1400 DEG C, then carry out pyrolysis with the ramp of 20-25 DEG C/min to 1400-1500 DEG C；
After pyrolysis, atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 12-75 DEG C/min, then cools to room temperature with the furnace, can obtain the P doping SiC nanometer particle film being substrate with carbon cloth.
The present invention first by organic precursor heat cross-linking solidify and pulverize again with adulterant FePO4·H2The mixing of O powder is placed in graphite crucible, with carbon cloth for substrate, and preparation P doping SiC nano-particle.First, the present invention can pass through to control organic precursor powder and FePO4·H2The mixed proportion of O powder, it is achieved the regulation and control to SiC nano-particle P doping content.Secondly, Al2O3Crucible there is a possibility that and mixes Al foreign atom in SiC nanostructured, but mixed-powder is placed in graphite crucible and will not introduce other foreign atoms by the present invention.The present invention is by controlling cooldown rate, pyrolysis temperature, heating rate, controlling P adulterate the size of SiC nano-particle especially by controlling cooldown rate, pyrolysis temperature, cooldown rate is more little, and the granule of preparation is more big, contrary cooldown rate is more big, and the granule of preparation is more little；Heating rate is too fast, furnace temp can be made at once can not to stop after rising to pyrolysis temperature, but directly exceed pyrolysis temperature, it is easy to cause that pyrolysis is too high.It addition, the present invention adopts temperature-gradient method, in the previous temperature rise period, heating rate can be quicker, and then shortening intensification comes, but the heating rate in the rear temperature rise period obtains and slowly carries out, and slowly reaches the temperature of pyrolysis.In the present invention, atmosphere sintering furnace is cooled to 1080-1150 DEG C, rate of cooling can be better controled over, thus realizing effective growth of SiC nano-particle, nano-particle not regrowth at lower than 1080-1150 DEG C, therefore room temperature can be cooled to the furnace after lower than 1080-1150 DEG C, without considering further that cooldown rate.The present invention is possible not only to prepare P doping SiC nanometer particle film by the method, and the size of nano-particle can be realized Effective Regulation.
In the preparation method of above-mentioned P doping SiC nanometer particle film, described organic precursor is polysilazane, it is possible to use other contain the organic precursor of Si and C element, such as the mixed-powder of C powder and Si powder.
In the preparation method of above-mentioned P doping SiC nanometer particle film, described heat cross-linking is solidificated in N2It is incubated 20-50min in 250-280 DEG C under atmosphere.
Above-mentioned P adulterate SiC nanometer particle film preparation method in, described organic precursor powder and FePO4·H2The mass ratio of O powder is 5:0.8-2.Organic precursor powder and FePO4·H2The mass ratio of O powder is different, and the P doping content in the SiC nanowire of synthesis is also different, FePO4·H2The content of O is more big, and P doping content is more high.
As preferably, described organic precursor powder and FePO4·H2The mass ratio of O powder is 5:1.0-1.5.
As preferably, concretely comprising the following steps of described pyrolysis: being placed in graphite resistance atmosphere sintering furnace together by graphite crucible and carbon cloth substrate, atmosphere furnace is first evacuated to 10-4Pa, it is re-filled with high-purity Ar gas (purity is 99.99%), until pressure is an atmospheric pressure (0.11Mpa), then first it is rapidly heated to 1300-1400 DEG C from room temperature with the speed of 28-32 DEG C/min, then with the ramp of 20-25 DEG C/min to 1400-1500 DEG C.The pyrolysis of the present invention needs not move through insulation, is rapidly heated to uniform temperature and carries out pyrolysis, it is possible to quickly cools down.
The P doping SiC nanometer particle film that the preparation method of above-mentioned P doping SiC nanometer particle film prepares, its phase composition is 3C-SiC, and in described P doping SiC nanometer particle film, P doping is 0.25-0.30at.%.
The rough surface of the P doping SiC nanometer particle film that the preparation method of above-mentioned P doping SiC nanometer particle film prepares, and thickness is inconsistent, P doping SiC nano-particle is evenly distributed in end liner.
The diameter of the P doping SiC nanometer particle film that the preparation method of above-mentioned P doping SiC nanometer particle film prepares is 100-400nm.
The diameter of the P doping SiC nanometer particle film that the preparation method of above-mentioned P doping SiC nanometer particle film prepares is 150-350nm.
A kind of P adulterates the application in electronics of the SiC nanometer particle film, particularly in the application in filed emission cathode material, it is possible to for the application in display and miniature low-power X-ray tube.
Compared with prior art, it is an advantage of the current invention that, the present invention is by simply controlled, the method with repeatability very well achieves preparation SiC nanometer particle film on carbon cloth substrate, the surface of SiC nanometer particle film has seamed edge sharp-pointed in a large number and corner angle, achieve the P to SiC nanometer particle film to adulterate, and achieve the Effective Regulation of SiC nanoparticle size that P is adulterated.
Accompanying drawing explanation
Fig. 1 is X-ray diffraction (XRD) figure of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 2 is low power scanning electron microscope (SEM) figure (5 μm) of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 3 is low power scanning electron microscope (SEM) figure (1 μm) of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 4 is high power scanning electron microscope (SEM) figure of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 5 is high power transmission electron microscope (HRTEM) figure of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 6 is SEAD (SAED) figure of the P doping SiC nanometer particle film being grown in carbon cloth substrate surface obtained by the embodiment of the present invention 1.
Fig. 7 is that in the P doping SiC nanometer particle film obtained by the embodiment of the present invention 1, figure is swept in the face of P element.
Fig. 8 is scanning electron microscope (SEM) figure of P doping SiC nanometer particle film obtained in embodiment 2.
Fig. 9 is scanning electron microscope (SEM) figure of the P doping SiC nanometer particle film prepared in the embodiment of the present invention 3.
Detailed description of the invention
The following is specific embodiments of the invention and in conjunction with accompanying drawing, technical scheme is further described, but the present invention is not limited to these embodiments.
Embodiment 1
Choose polysilazane, at N2Being incubated 30min in 260 DEG C under atmosphere protection and carry out heat cross-linking solidification, load solidifying the SiCN solid obtained in nylon resin ball grinder, ball milling powder is broken into powder.
Weigh polysilazane powder and the 60mgFePO of 300mg4·H2O powder mix homogeneously is placed on bottom graphite crucible.Cut carbon cloth substrate 5 × 5cm (long × wide) and be placed in crucible top.
Being placed in graphite resistance atmosphere sintering furnace together by graphite crucible and carbon cloth substrate, atmosphere furnace is first evacuated to 10-4Pa, it is re-filled with high-purity Ar gas (purity is 99.99%), until pressure is an atmospheric pressure (0.11Mpa), hereafter constant pressure, then first it is rapidly heated to 1350 DEG C from room temperature with the speed of 30 DEG C/min, then with the ramp of 23 DEG C/min to 1450 DEG C DEG C, then atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 23 DEG C/min, cool to room temperature again with the furnace, P doping SiC nanometer particle film can be obtained.
Embodiment 2
From embodiment 1 to differ only in cooling procedure different, the cooling procedure in embodiment 2 is not all and is first cooled to 1080-1150 DEG C with the speed of 14 DEG C/min, then cools to room temperature with the furnace.
Embodiment 3
From embodiment 1 to differ only in cooling procedure different, the cooling procedure in embodiment 3 is first be cooled to 1080-1150 DEG C with the speed of 70 DEG C/min, then cool to room temperature with the furnace.
Embodiment 4
From embodiment 1 to differ only in cooling procedure different, the cooling procedure in embodiment 4 is first be cooled to 1080-1150 DEG C with the speed of 35 DEG C/min, then cool to room temperature with the furnace.
Embodiment 5
From embodiment 1 to differ only in cooling procedure different, the cooling procedure in embodiment 5 is first be cooled to 1080-1150 DEG C with the speed of 75 DEG C/min, then cool to room temperature with the furnace.
Embodiment 6-10
From embodiment 1-5 to differ only in pyrolytic process different, in embodiment 6-10 pyrolysis be first with the speed of 29 DEG C/min from room temperature to 1380 DEG C, then carry out pyrolysis with the ramp of 22 DEG C/min to 1420 DEG C.
Embodiment 11-15
From embodiment 1-5 to differ only in pyrolytic process different, in embodiment 6-10 pyrolysis be first with the speed of 31 DEG C/min from room temperature to 1330 DEG C, then carry out pyrolysis with the ramp of 24 DEG C/min to 1470 DEG C.
Embodiment 16-20
From embodiment 1-5 to differ only in pyrolytic process different, in embodiment 6-10 pyrolysis be first with the speed of 28 DEG C/min from room temperature to 1400 DEG C, then carry out pyrolysis with the ramp of 25 DEG C/min to 1500 DEG C.
Embodiment 21-25
From embodiment 1-5 to differ only in pyrolytic process different, in embodiment 6-10 pyrolysis be first with the speed of 32 DEG C/min from room temperature to 1300 DEG C, then carry out pyrolysis with the ramp of 20 DEG C/min to 1400 DEG C.
Embodiment 26-50
With embodiment 1-5 differ only in polysilazane powder and FePO4The quality of powder mixing is different, adds 300mg polysilazane powder and 90mgFePO in embodiment 26-504·H2O mixes.
Additionally, other parameters are not limited to recited above in the embodiment of the present invention, such as polysilazane powder and FePO4·H2O powder arbitrarily can also select by the mass ratio within the scope of 5:0.8-2, the temperature that and for example heat cross-linking solidifies can be also 255 DEG C, 260 DEG C, 265 DEG C, 250 DEG C, 270 DEG C, 280 DEG C etc., and temperature retention time can be 25min, 20min, 35min, 40min, 45min, 50min etc..
Application Example
The SiC nanometer particle film that adulterated by P in embodiment 1 is applied in electronics, is particularly applicable in filed emission cathode material, it is possible to be used in display and miniature low-power X-ray tube.
Fig. 1 is X-ray diffraction (XRD) collection of illustrative plates of the SiC nanometer particle film being grown in carbon cloth substrate surface obtained by embodiment 1, it was shown that the phase composition of the material of preparation is 3C-SiC, and has higher crystallinity.The low power (5 μm, 1 μm) of the SiC nanometer particle film being grown in carbon cloth substrate surface obtained by Fig. 2-4 respectively embodiment 1 and high power scanning electron microscope (SEM) figure, show that nano-particle is grown in the surface of whole carbon fiber uniformly, diameter is 150-300nm, rough, has much sharp-pointed seamed edge and corner angle.High power transmission electron microscope (HRTEM) figure and SEAD (SAED) figure of the Fig. 5-6 SiC nanometer particle film being grown in carbon cloth substrate surface obtained by embodiment 1, show that the internal basic zero defect of SiC nano-particle exists, for mono-crystalline structures.Fig. 7 is that in embodiment 1, figure is swept in the face of P element, it was shown that P adulterant is evenly distributed in SiC nano-particle, it is achieved that the P of SiC nanometer particle film is adulterated.
Fig. 8 is scanning electron microscope (SEM) figure in embodiment 2 at the SiC nanometer particle film of carbon cloth Grown, again show that nano-particle is grown in the surface of whole carbon fiber uniformly, diameter is 200-350nm, and rough has much sharp-pointed seamed edge and corner angle.
Fig. 9 is scanning electron microscope (SEM) figure in embodiment 3 at the SiC nanometer particle film of carbon cloth Grown, again show that nano-particle is grown in the surface of whole carbon fiber uniformly, diameter is 100-250nm, and rough has much sharp-pointed seamed edge and corner angle.
Specific embodiment described herein is only to present invention spirit explanation for example.Described specific embodiment can be made various amendment or supplements or adopt similar mode to substitute by those skilled in the art, but without departing from the spirit of the present invention or surmount the scope that appended claims is defined.
Claims (7)
1. the preparation method of a P doping SiC nanometer particle film, it is characterised in that described preparation method comprises the steps:
Organic precursor heat cross-linking solidifies and pulverizes, and obtains organic precursor powder；
By organic precursor powder and FePO4·H2O powder mix homogeneously is placed on bottom graphite crucible, and carbon cloth substrate is placed on crucible top；Described organic precursor powder and FePO4·H2The mass ratio of O powder is 5:(0.8-2)；
Graphite crucible and carbon cloth substrate are placed in atmosphere sintering furnace together, first with the speed of 28-32 DEG C/min from room temperature to 1300-1400 DEG C, then carry out pyrolysis with the ramp of 20-25 DEG C/min to 1400-1500 DEG C；
After pyrolysis, atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 12-75 DEG C/min, then cools to room temperature with the furnace, can obtain the P doping SiC nanometer particle film being substrate with carbon cloth；
Wherein, described organic precursor is polysilazane；
Described heat cross-linking is solidificated in N2It is incubated 20-50min in 250-280 DEG C under atmosphere.
2. P according to claim 1 doping SiC nanometer particle film, it is characterised in that described organic precursor powder and FePO4·H2The mass ratio of O powder is 5:(1.0-1.5).
3. P according to claim 1 doping SiC nanometer particle film, it is characterised in that concretely comprising the following steps of described pyrolysis: being placed in graphite resistance atmosphere sintering furnace together by graphite crucible and carbon cloth substrate, atmosphere furnace is first evacuated to 10-4Pa, being re-filled with high-purity Ar gas purity is 99.99%, until pressure is upgraded to 0.11Mpa, is then first rapidly heated to 1300-1400 DEG C from room temperature with the speed of 28-32 DEG C/min, then with the ramp of 20-25 DEG C/min to 1400-1500 DEG C.
4. P according to claim 1 doping SiC nanometer particle film, it is characterised in that the phase composition of described P doping SiC nanometer particle film is 3CIn-SiC, described P doping SiC nanometer particle film, P doping is 0.25-0.30at.%.
5. P according to claim 4 doping SiC nanometer particle film, it is characterised in that the rough surface of described P doping SiC nanometer particle film, and thickness is inconsistent, P doping SiC nano-particle is evenly distributed in end liner.
6. P according to claim 5 doping SiC nanometer particle film, it is characterised in that the diameter of described P doping SiC nanometer particle film is 100-400nm.
7. P according to claim 6 doping SiC nanometer particle film, it is characterised in that the diameter of described P doping SiC nanometer particle film is 150-350nm.
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