CN105161554A - Preparation method for P-doped SiC nanoparticle thin film - Google Patents
Preparation method for P-doped SiC nanoparticle thin film Download PDFInfo
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- CN105161554A CN105161554A CN201510511223.9A CN201510511223A CN105161554A CN 105161554 A CN105161554 A CN 105161554A CN 201510511223 A CN201510511223 A CN 201510511223A CN 105161554 A CN105161554 A CN 105161554A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000843 powder Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000004744 fabric Substances 0.000 claims abstract description 25
- 238000000197 pyrolysis Methods 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 20
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 15
- 239000010439 graphite Substances 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 61
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 238000004132 cross linking Methods 0.000 claims description 7
- 229920001709 polysilazane Polymers 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000010298 pulverizing process Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 13
- 239000002086 nanomaterial Substances 0.000 abstract description 10
- 229920000049 Carbon (fiber) Polymers 0.000 abstract description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 7
- 239000004917 carbon fiber Substances 0.000 abstract description 4
- 239000011812 mixed powder Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 230000000630 rising effect Effects 0.000 abstract 2
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 abstract 1
- 229910000399 iron(III) phosphate Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 8
- 230000033228 biological regulation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 238000004098 selected area electron diffraction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to a preparation method for a P-doped SiC nanoparticle thin film, belonging to the technical field of a nano material. The preparation method comprises the following steps of: carrying out thermal crossing and curing on an organic precursor and smashing the precursor to obtain organic precursor powder; uniformly mixing the organic precursor powder and FePO4.H2O powder, and placing the mixed powder into the bottom of a graphite crucible, and placing a carbon fabric substrate at the top of the crucible; placing the graphite crucible and the carbon fabric substrate in an atmosphere sintering furnace, rising the temperature to 1,300-1,400 DEG C from a room temperature at a rate of 28-32 DEG C per minute, and rising the temperature to 1,400-1,500 DEG C at a rate of 20-25 DEG C per minute for pyrolysis; and cooling the atmosphere furnace to 1,080-1,150 DEG C at a rate of 12-75 DEG C per minute after pyrolysis, cooling to the room temperature with the furnace, thereby obtaining the P-doped SiC nanoparticle thin film taking the carbon fabric as the substrate. The preparation method is simple and controllable, and has high repeatability, the SiC nanoparticle thin film is prepared on the carbon fiber fabric substrate, and P doping to the SiC nanoparticle thin film is achieved, and the size of the P-doped SiC nanoparticle is effectively controlled.
Description
Technical field
The present invention relates to a kind of SiC nanometer particle film, be specifically related to a kind of preparation method of P doped SIC nanometer particle film, belong to technical field of nano material.
Background technology
SiC is the third generation semi-conducting material grown up after the first generation (Si) and the second generation (GaAs) semi-conducting material.Compared with its conventional bulk, low-dimensional SiC nanostructure has excellent process based prediction model, the characteristics such as such as high energy gap, high thermal conductivity and the saturated mobility of electronics, little dielectric constant and good mechanical performance.Based on above-mentioned special performance, SiC low-dimensional nano structure is specially adapted to harsh operational environment as high temperature, high frequency, high-power, photoelectron and radioresistance device, there is very tempting application prospect preparing high-performance composite materials, high strength small size composite element, nano surface reinforced composite and construct in nano photoelectric device etc., quite concerned nearly ten years.
By carrying out nanometer semiconductor structure being atom dopedly proved to be a kind of effective way improving its performance.After doping, build-in attribute such as the performances such as optics, electricity and magnetics of semiconductor nano material have significant change, significant to its functionalized application.At present, the atom doped research of SiC low-dimensional nano structure has also obtained certain progress, and Al, N, B etc. are different, and atom doped SiC low-dimensional nano structure has been reported.Research shows, after Al and atom N doping, the threshold electric field of SiC nanowire field-transmitting cathode significantly reduces, and the electron emission stability of B doped SIC nanowire cathodes obviously strengthens, and blue shift to a certain degree occurs the photoluminescence spectrum of the SiC nanowire of Al doping.These study confirmation, and SiC low-dimensional nano structure is performance generation significant change after atom doped, is with a wide range of applications.
But nanostructure-based of current atom doped SIC is confined to one dimension or two-dimensional structure, the report about nano particle is few, and the research in the Effective Regulation realizing the atom doped and size of SiC nanometer particle film exists very large deficiency especially.
Summary of the invention
The object of the invention is to there are the problems referred to above for existing technology, propose a kind of preparation method that can realize the growth of SiC nanometer particle film on carbon cloth substrate and realize P doped SIC nanometer particle film SiC nanometer particle film being carried out to P doping and size regulation and control.
Object of the present invention realizes by following technical proposal: a kind of preparation method of P doped SIC nanometer particle film, described preparation method comprises the steps:
The solidification of organic precursor heat cross-linking and pulverizing, obtain organic precursor powder;
By organic precursor powder and FePO
4h
2o powder mixes and is placed on bottom graphite crucible, and carbon cloth substrate is placed on crucible top;
Graphite crucible and carbon cloth substrate are placed in atmosphere sintering furnace together, first with the speed of 28-32 DEG C/min from room temperature to 1300-1400 DEG C, then carry out pyrolysis with the ramp of 20-25 DEG C/min to 1400-1500 DEG C;
After pyrolysis, atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 12-75 DEG C/min, then cools to room temperature with the furnace, and can obtain take carbon cloth as the P doped SIC nanometer particle film of substrate.
The present invention first by organic precursor heat cross-linking solidification and pulverize again with dopant FePO
4h
2the mixing of O powder is placed in graphite crucible, take carbon cloth as substrate, preparation P doped SIC nano particle.First, the present invention is by controlling organic precursor powder and FePO
4h
2the mixed proportion of O powder, realizes the regulation and control to SiC nano particle P doping content.Secondly, Al
2o
3crucible likely makes to mix Al foreign atom in SiC nanostructure, but mixed-powder is placed in graphite crucible by the present invention can not introduce other foreign atoms.The present invention is by controlled cooling model speed, pyrolysis temperature, heating rate, especially by the size of controlled cooling model speed, pyrolysis temperature control P doped SIC nano particle, cooldown rate is less, and the particle of preparation is larger, contrary cooldown rate is larger, and the particle of preparation is less; Heating rate is too fast, can not stop at once, but directly exceed pyrolysis temperature, easily cause pyrolysis too high after furnace temp can be made to rise to pyrolysis temperature.In addition, the present invention adopts temperature-gradient method, and in the last temperature rise period, heating rate can be quicker, and then shortens intensification and come, but the heating rate in the rear temperature rise period obtains and slowly carries out, and reaches the temperature of pyrolysis lentamente.In the present invention, atmosphere sintering furnace is cooled to 1080-1150 DEG C, can controlled cooling model speed better, thus realize effective growth of SiC nano particle, nano particle not regrowth at lower than 1080-1150 DEG C, therefore can cool to room temperature with the furnace after lower than 1080-1150 DEG C, also need not consider cooldown rate again.The present invention not only can prepare P doped SIC nanometer particle film by the method, and can realize Effective Regulation to the size of nano particle.
In the preparation method of above-mentioned P doped SIC nanometer particle film, described organic precursor is polysilazane, other also can be used to contain the organic precursor of Si and C element, such as the mixed-powder of C powder and Si powder.
In the preparation method of above-mentioned P doped SIC nanometer particle film, described heat cross-linking is solidificated in N
2in 250-280 DEG C of insulation 20-50min under atmosphere.
In the preparation method of above-mentioned P doped SIC nanometer particle film, described organic precursor powder and FePO
4h
2the mass ratio of O powder is 5:0.8-2.Organic precursor powder and FePO
4h
2the mass ratio of O powder is different, and the P doping content in the SiC nanowire of synthesis is also different, FePO
4h
2the content of O is larger, and P doping content is higher.
As preferably, described organic precursor powder and FePO
4h
2the mass ratio of O powder is 5:1.0-1.5.
As preferably, the concrete steps of described pyrolysis are: graphite crucible and carbon cloth substrate are placed in graphite resistance atmosphere sintering furnace together, and atmosphere furnace is first evacuated to 10
-4pa, be filled with high-purity Ar gas (purity is 99.99%) again, until pressure is an atmospheric pressure (0.11Mpa), be then first rapidly heated to 1300-1400 DEG C from room temperature with the speed of 28-32 DEG C/min, then with the ramp of 20-25 DEG C/min to 1400-1500 DEG C.Pyrolysis of the present invention does not need, through insulation, to be rapidly heated to uniform temperature and to carry out pyrolysis, just can cool fast.
The P doped SIC nanometer particle film that the preparation method of above-mentioned P doped SIC nanometer particle film obtains, its phase composition is 3C-SiC, and in described P doped SIC nanometer particle film, P doping is 0.25-0.30at.%.
The rough surface of the P doped SIC nanometer particle film that the preparation method of above-mentioned P doped SIC nanometer particle film obtains, and thickness is inconsistent, P doped SIC nano particle is evenly distributed in end liner.
The diameter of the P doped SIC nanometer particle film that the preparation method of above-mentioned P doped SIC nanometer particle film obtains is 100-400nm.
The diameter of the P doped SIC nanometer particle film that the preparation method of above-mentioned P doped SIC nanometer particle film obtains is 150-350nm.
The application of P doped SIC nanometer particle film in electronics, the application especially in filed emission cathode material can be the application in display and miniature low-power X-ray tube.
Compared with prior art, the invention has the advantages that, the present invention is by simply controlled, the method with repeatability very well achieves prepares SiC nanometer particle film on carbon cloth substrate, the surface of SiC nanometer particle film has seamed edge sharp-pointed in a large number and corner angle, achieve and the P of SiC nanometer particle film is adulterated, and achieve the Effective Regulation to P doped SIC nanoparticle size.
Accompanying drawing explanation
The growth of Fig. 1 obtained by the embodiment of the present invention 1 is at X-ray diffraction (XRD) figure of the P doped SIC nanometer particle film of carbon cloth substrate surface.
The growth of Fig. 2 obtained by the embodiment of the present invention 1 is at low power ESEM (SEM) figure (5 μm) of the P doped SIC nanometer particle film of carbon cloth substrate surface.
The growth of Fig. 3 obtained by the embodiment of the present invention 1 is at low power ESEM (SEM) figure (1 μm) of the P doped SIC nanometer particle film of carbon cloth substrate surface.
The growth of Fig. 4 obtained by the embodiment of the present invention 1 is at high power ESEM (SEM) figure of the P doped SIC nanometer particle film of carbon cloth substrate surface.
The growth of Fig. 5 obtained by the embodiment of the present invention 1 is at high power transmission electron microscope (HRTEM) figure of the P doped SIC nanometer particle film of carbon cloth substrate surface.
The growth of Fig. 6 obtained by the embodiment of the present invention 1 is at selected area electron diffraction (SAED) figure of the P doped SIC nanometer particle film of carbon cloth substrate surface.
In the P doped SIC nanometer particle film of Fig. 7 obtained by the embodiment of the present invention 1, figure is swept in the face of P element.
Fig. 8 is ESEM (SEM) figure of P doped SIC nanometer particle film obtained in embodiment 2.
Fig. 9 is ESEM (SEM) figure of P doped SIC nanometer particle film obtained in the embodiment of the present invention 3.
Embodiment
Be below specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiments.
Embodiment 1
Choose polysilazane, at N
2carrying out heat cross-linking solidification in 260 DEG C of insulation 30min under atmosphere protection, loading in nylon resin ball grinder by solidifying the SiCN solid obtained, ball mill grinding powdered.
Take polysilazane powder and the 60mgFePO of 300mg
4h
2o powder mixes and is placed on bottom graphite crucible.Cut carbon cloth substrate 5 × 5cm (long × wide) and be placed in crucible top.
Graphite crucible and carbon cloth substrate are placed in graphite resistance atmosphere sintering furnace together, and atmosphere furnace is first evacuated to 10
-4pa, be filled with high-purity Ar gas (purity is 99.99%) again, until pressure is an atmospheric pressure (0.11Mpa), after this constant pressure, then be first rapidly heated to 1350 DEG C from room temperature with the speed of 30 DEG C/min, then with the ramp to 1450 of 23 DEG C/min DEG C DEG C, then atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 23 DEG C/min, cool to room temperature with the furnace again, P doped SIC nanometer particle film can be obtained.
Embodiment 2
Only be that cooling procedure is different from the difference of embodiment 1, the cooling procedure in embodiment 2 is not all and is first cooled to 1080-1150 DEG C with the speed of 14 DEG C/min, then cools to room temperature with the furnace.
Embodiment 3
Only be that cooling procedure is different from the difference of embodiment 1, the cooling procedure in embodiment 3 is first be cooled to 1080-1150 DEG C with the speed of 70 DEG C/min, then cool to room temperature with the furnace.
Embodiment 4
Only be that cooling procedure is different from the difference of embodiment 1, the cooling procedure in embodiment 4 is first be cooled to 1080-1150 DEG C with the speed of 35 DEG C/min, then cool to room temperature with the furnace.
Embodiment 5
Only be that cooling procedure is different from the difference of embodiment 1, the cooling procedure in embodiment 5 is first be cooled to 1080-1150 DEG C with the speed of 75 DEG C/min, then cool to room temperature with the furnace.
Embodiment 6-10
Only be that pyrolytic process is different from the difference of embodiment 1-5, in embodiment 6-10 pyrolysis be first with the speed of 29 DEG C/min from room temperature to 1380 DEG C, then carry out pyrolysis with the ramp to 1420 of 22 DEG C/min DEG C.
Embodiment 11-15
Only be that pyrolytic process is different from the difference of embodiment 1-5, in embodiment 6-10 pyrolysis be first with the speed of 31 DEG C/min from room temperature to 1330 DEG C, then carry out pyrolysis with the ramp to 1470 of 24 DEG C/min DEG C.
Embodiment 16-20
Only be that pyrolytic process is different from the difference of embodiment 1-5, in embodiment 6-10 pyrolysis be first with the speed of 28 DEG C/min from room temperature to 1400 DEG C, then carry out pyrolysis with the ramp to 1500 of 25 DEG C/min DEG C.
Embodiment 21-25
Only be that pyrolytic process is different from the difference of embodiment 1-5, in embodiment 6-10 pyrolysis be first with the speed of 32 DEG C/min from room temperature to 1300 DEG C, then carry out pyrolysis with the ramp to 1400 of 20 DEG C/min DEG C.
Embodiment 26-50
Polysilazane powder and FePO is only with the difference of embodiment 1-5
4the quality of powder mixing is different, adds 300mg polysilazane powder and 90mgFePO in embodiment 26-50
4h
2o mixes.
In addition, in the embodiment of the present invention, other parameters are not limited to recited above, as polysilazane powder and FePO
4h
2o powder can also be selected arbitrarily by the mass ratio within the scope of 5:0.8-2, and for example the temperature of heat cross-linking solidification also can be 255 DEG C, 260 DEG C, 265 DEG C, 250 DEG C, 270 DEG C, 280 DEG C etc., and temperature retention time can be 25min, 20min, 35min, 40min, 45min, 50min etc.
Application Example
P doped SIC nanometer particle film in embodiment 1 is applied in electronics, is particularly applicable in filed emission cathode material, can be used in display and miniature low-power X-ray tube.
The growth of Fig. 1 obtained by embodiment 1, at X-ray diffraction (XRD) collection of illustrative plates of the SiC nanometer particle film of carbon cloth substrate surface, shows that the phase composition of the material prepared is 3C-SiC, and has higher crystallinity.Fig. 2-4 is respectively the growth obtained by embodiment 1 at the low power (5 μm, 1 μm) of the SiC nanometer particle film of carbon cloth substrate surface and high power ESEM (SEM) figure, show that nano particle grows on the surface of whole carbon fiber uniformly, diameter is 150-300nm, rough, has much sharp-pointed seamed edge and corner angle.The growth of Fig. 5-6 obtained by embodiment 1 is at high power transmission electron microscope (HRTEM) figure of the SiC nanometer particle film of carbon cloth substrate surface and selected area electron diffraction (SAED) figure, showing that the inner basic zero defect of SiC nano particle exists, is mono-crystalline structures.Fig. 7 is that figure is swept in the face of P element in embodiment 1, shows that P dopant is evenly distributed in SiC nano particle, achieves and adulterates to the P of SiC nanometer particle film.
Fig. 8 is ESEM (SEM) figure at the SiC nanometer particle film of carbon cloth Grown in embodiment 2, show that nano particle grows on the surface of whole carbon fiber uniformly equally, diameter is 200-350nm, and rough has much sharp-pointed seamed edge and corner angle.
Fig. 9 is ESEM (SEM) figure at the SiC nanometer particle film of carbon cloth Grown in embodiment 3, show that nano particle grows on the surface of whole carbon fiber uniformly equally, diameter is 100-250nm, and rough has much sharp-pointed seamed edge and corner angle.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendment or supplement or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present invention or surmount the scope that appended claims defines.
Claims (10)
1. a preparation method for P doped SIC nanometer particle film, is characterized in that, described preparation method comprises the steps:
The solidification of organic precursor heat cross-linking and pulverizing, obtain organic precursor powder;
By organic precursor powder and FePO
4h
2o powder mixes and is placed on bottom graphite crucible, and carbon cloth substrate is placed on crucible top;
Graphite crucible and carbon cloth substrate are placed in atmosphere sintering furnace together, first with the speed of 28-32 DEG C/min from room temperature to 1300-1400 DEG C, then carry out pyrolysis with the ramp of 20-25 DEG C/min to 1400-1500 DEG C;
After pyrolysis, atmosphere sintering furnace is first cooled to 1080-1150 DEG C with the speed of 12-75 DEG C/min, then cools to room temperature with the furnace, and can obtain take carbon cloth as the P doped SIC nanometer particle film of substrate.
2. the preparation method of P doped SIC nanometer particle film according to claim 1, is characterized in that, described organic precursor is polysilazane.
3. the preparation method of P doped SIC nanometer particle film according to claim 1, it is characterized in that, described heat cross-linking is solidificated in N
2in 250-280 DEG C of insulation 20-50min under atmosphere.
4. the preparation method of P doped SIC nanometer particle film according to claim 1, is characterized in that, described organic precursor powder and FePO
4h
2the mass ratio of O powder is 5:0.8-2.
5. P doped SIC nanometer particle film according to claim 4, is characterized in that, described organic precursor powder and FePO
4h
2the mass ratio of O powder is 5:1.0-1.5.
6. P doped SIC nanometer particle film according to claim 1, is characterized in that, the concrete steps of described pyrolysis are: graphite crucible and carbon cloth substrate are placed in graphite resistance atmosphere sintering furnace together, and atmosphere furnace is first evacuated to 10
-4pa, be filled with high-purity Ar gas (purity is 99.99%) again, until pressure is an atmospheric pressure (0.11Mpa), be then first rapidly heated to 1300-1400 DEG C from room temperature with the speed of 28-32 DEG C/min, then with the ramp of 20-25 DEG C/min to 1400-1500 DEG C.
7. P doped SIC nanometer particle film according to claim 1, is characterized in that, the phase composition of described P doped SIC nanometer particle film is 3C-SiC, and in described P doped SIC nanometer particle film, P doping is 0.25-0.30at.%.
8. P doped SIC nanometer particle film according to claim 7, is characterized in that, the rough surface of described P doped SIC nanometer particle film, and thickness is inconsistent, and P doped SIC nano particle is evenly distributed in end liner.
9. P doped SIC nanometer particle film according to claim 8, is characterized in that, the diameter of described P doped SIC nanometer particle film is 100-400nm.
10. P doped SIC nanometer particle film according to claim 9, is characterized in that, the diameter of described P doped SIC nanometer particle film is 150-350nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112639174A (en) * | 2018-08-30 | 2021-04-09 | Skc株式会社 | Method for growing semi-insulating silicon carbide single crystal ingot and apparatus for growing silicon carbide single crystal ingot |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1985029A (en) * | 2004-07-07 | 2007-06-20 | Ⅱ－Ⅵ公司 | Low-doped semi-insulating SIC crystals and method |
| WO2013012907A2 (en) * | 2011-07-18 | 2013-01-24 | University Of South Florida | Method of encapsulating a phase change material with a metal oxide |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1985029A (en) * | 2004-07-07 | 2007-06-20 | Ⅱ－Ⅵ公司 | Low-doped semi-insulating SIC crystals and method |
| WO2013012907A2 (en) * | 2011-07-18 | 2013-01-24 | University Of South Florida | Method of encapsulating a phase change material with a metal oxide |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112639174A (en) * | 2018-08-30 | 2021-04-09 | Skc株式会社 | Method for growing semi-insulating silicon carbide single crystal ingot and apparatus for growing silicon carbide single crystal ingot |
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