CN105159359B - Broad domain oxygen sensor heating means and its control circuit - Google Patents
Broad domain oxygen sensor heating means and its control circuit Download PDFInfo
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- CN105159359B CN105159359B CN201510658186.4A CN201510658186A CN105159359B CN 105159359 B CN105159359 B CN 105159359B CN 201510658186 A CN201510658186 A CN 201510658186A CN 105159359 B CN105159359 B CN 105159359B
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Abstract
The present invention relates to a kind of broad domain oxygen sensor heating means and its control circuit, its control circuit includes：Lambda sensor, compare output circuit, microprocessor, heat driven circuit, the termination power VCC of internal resistance one of lambda sensor, another termination compares output circuit, the termination lambda sensor supply voltage VPP high of lambda sensor adding thermal resistance, low side connects heat driven circuit；Compare the output termination microprocessor of output circuit, microprocessor is to heat driven circuit output drive signal.In heating process, the internal resistance of lambda sensor is gradually reduced, so that the input voltage of comparator gradually increases, comparator is caused to overturn, microprocessor controls the drive signal that lambda sensor is heated according to the pulse signal that comparator is exported, drive signal is the adjustable PWM ripples of dutycycle, by the voltage in heat driven the regulation of electrical circuit adding thermal resistance, allows oxygen sensor probe temperature to maintain steady state value.Circuit structure of the present invention is simple, and effective heating voltage of adding thermal resistance can be adjusted by software flexible.
Description
Technical field
The present invention relates to a kind of broad domain oxygen sensor heating means and its control circuit, for diesel engine high-pressure co-rail system
Middle lambda sensor internal temperature heating.
Background technology
In patent of invention CN101976086A, using bridge circuit, provided to bridge circuit by voltage-regulating circuit
Heating voltage, and output voltage size is adjusted by error amplifying circuit, so as to control the internal resistance resistance of lambda sensor constant.Should
Patent is the heating voltage that lambda sensor is adjusted by hardware mode, lacks flexible adjustment.
In addition, having using special driving chip in scheme at present, the heating signal of lambda sensor is converted into voltage
Value, then through A/D conversion feeding SCM systems, single-chip microcomputer judges whether lambda sensor temperature has reached calibration value accordingly.It is this
Scheme not only increases the possibility and calculation error of measurement error, also add cost.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of broad domain oxygen sensor heating means and
Its control circuit, makes lambda sensor reach the optimum working temperature of requirement (less than 20s) in the short period of time, and ensure oxygen
The accuracy of sensor measurement data.
According to the technical scheme that the present invention is provided, described broad domain oxygen sensor heating control circuit includes：Lambda sensor,
Compare output circuit, microprocessor, heat driven circuit, wherein the termination power VCC of internal resistance Ri mono- of lambda sensor, internal resistance Ri's
Another termination compares output circuit, lambda sensor adding thermal resistance RhHigh termination lambda sensor supply voltage VPP, adding thermal resistance Rh
Low side connect heat driven circuit；The output termination microprocessor for comparing output circuit, microprocessor is to heat driven electricity
Road output drive signal；Demarcation resistance value according to lambda sensor, presets the threshold value electricity for comparing comparator in output circuit
Pressure, in heating process, the internal resistance Ri of lambda sensor is gradually reduced so that the input voltage of comparator gradually increases, and causes to compare
Device overturns, and microprocessor controls the drive signal that lambda sensor is heated, the driving according to the pulse signal that comparator is exported
Signal is the adjustable PWM ripples of dutycycle, by heat driven the regulation of electrical circuit adding thermal resistance RhOn voltage, allow oxygen sensor probe
Temperature maintains steady state value.
Wherein, described comparing output circuit includes resistance R1, R2, R3, electric capacity C1 and comparator U1, the one of resistance R1
The reverse input end of termination power VCC, resistance the R1 other end connection comparator U1, and be grounded by resistance R2, comparator U1's
The other end of input connected oxygen sensor internal resistance Ri in the same direction, and be grounded by resistance R3；The one termination lambda sensor of electric capacity C1
Supply voltage VPP, other end ground connection；The output end signal S1 of comparator U1 enters microprocessor, and microprocessor is sentenced according to logic
It is disconnected, output drive signal S2；The heat driven circuit includes metal-oxide-semiconductor Q1, and the grid of metal-oxide-semiconductor Q1 meets drive signal S2, metal-oxide-semiconductor
Q1 drain electrodes meet lambda sensor adding thermal resistance RhLow side, metal-oxide-semiconductor Q1 source grounds.
Meet relation between resistance R1, R2, R3：Wherein, resistance R1, R2, R3 is fixed value,
Resistance RCALIt is the demarcation resistance value of lambda sensor.
The broad domain oxygen sensor heating means of foregoing circuit are：If the input input voltage VA in the same direction of comparator U1, than
Reverse input end input voltage VB compared with device U1, heating process is as follows：
(a) resistance R1, R2, R3 be fixed value, Ri reduces with the rising of temperature, in heating process, voltage VA by
It is cumulative big, it is being heated to desired value temperature TCALBefore, the signal S1 of comparator U1 outputs is low level, is heated to target temperature
When, signal S1 is high level by low transition；
B () when microprocessor detects signal S1 for low level, then output signal S2, signal S2 is PWM ripples, if micro- place
Reason device detects signal S1 for high level, then the output of shutdown signal S2；
C () under the driving of signal S2, metal-oxide-semiconductor Q1 is opened, adding thermal resistance RhWork, lambda sensor temperature is raised.
In heating process, the change in duty cycle of the PWM ripple signals of signal S2 is divided into 3 stages：(1) warm-up phase, accounts for
Sky keeps constant than being a smaller value；(2) temperature ascent stage, dutycycle gradually increases according to certain rules；(3) temperature
Holding stage, the size of dutycycle is obtained by PID regulations.
It is an advantage of the invention that：
(1) circuit structure is simple, it is not necessary to special driving chip, simplify control logic；
(2) during initialization, using soft-start mode, oxygen sensor probe temperature slowly rises, can be in 20s or so times
Reach calibration value；
(3) effective heating voltage of the adding thermal resistance of lambda sensor, can flexible modulation by software control.
(4) common component is used in whole circuit, cost of implementation is low.
Brief description of the drawings
Fig. 1 is lambda sensor heating control circuit figure of the invention.
Fig. 2 is signal waveforms.
Fig. 3 is the relation curve of lambda sensor internal resistance and temperature.
Fig. 4 is signal flow graph.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
As shown in figure 1, a kind of broad domain oxygen sensor heating control circuit includes：Lambda sensor, compare output circuit, Wei Chu
Reason device, heat driven circuit, lambda sensor part include adding thermal resistance RhAnd sensor internal resistance Ri, wherein lambda sensor is interior
Another termination of resistance Ri mono- termination power VCC, internal resistance Ri compares output circuit, lambda sensor adding thermal resistance RhTermination oxygen high pass
Sensor supply voltage VPP, adding thermal resistance RhLow side connect heat driven circuit.Sensor internal resistance Ri is counted as a variable resistor,
The partial pressure for participating in external circuit is calculated.Microprocessor receives the output signal S1 for comparing output circuit, controls heat driven circuit
The output of drive signal S2.Signal S1 is pulse signal, output of the microprocessor according to the state control signal S2 of signal S1.Letter
Number S2 is the PWM ripple signals of variable duty ratio.
Described comparing output circuit includes resistance R1, R2, R3, electric capacity C1 and comparator U1, a termination of resistance R1
The reverse input end of power supply VCC, resistance the R1 other end connection comparator U1, and be grounded by resistance R2, the partial pressure value of resistance R2
It is VB, the reverse input end of VB feeding comparators U1.The input connected oxygen sensor internal resistance Ri's in the same direction of comparator U1 is another
End, and be grounded by resistance R3；The partial pressure value of resistance R3 is VA, the input in the same direction of VA feeding comparators U1.The one of electric capacity C1
Termination lambda sensor supply voltage VPP, other end ground connection；The output end signal S1 of comparator U1 enters microprocessor, microprocessor
Device is according to logic judgment, output drive signal S2；The heat driven circuit includes metal-oxide-semiconductor Q1, and the grid of metal-oxide-semiconductor Q1 connects driving
Signal S2, metal-oxide-semiconductor Q1 drain electrode meet lambda sensor adding thermal resistance RhLow side, metal-oxide-semiconductor Q1 source grounds.
Demarcation resistance value according to lambda sensor, presets the threshold voltage for comparing comparator in output circuit, heating
During, the internal resistance Ri of lambda sensor is gradually reduced so that the input voltage of comparator gradually increases, and causes comparator to overturn,
Microprocessor controls the drive signal that lambda sensor is heated according to the pulse signal that comparator is exported, and drive signal is dutycycle
Adjustable PWM ripples, adding thermal resistance R is adjusted flexibly by heat driven circuithOn voltage, allow oxygen sensor probe temperature maintain
In steady state value.
Lambda sensor heating means based on foregoing circuit, comprise the following steps：
A the magnitude of voltage VA in the loop of () sampling lambda sensor internal resistance Ri and resistance R3 compositions, feeding comparator U1 is just
To input, in the loop of resistance R1, R2 composition, sampled voltage VB, the reverse input end of feeding comparator U1.Wherein, electricity
Resistance R1, R2, R3 are fixed value, and Ri reduces with the rising of temperature, and in heating process, the magnitude of voltage at VA gradually increases,
It is being heated to desired value temperature TCALBefore, the output signal S1 of comparator U1 is low level, when being heated to target temperature, signal
S1 is high level by low transition.
B () then exports heating signal S2 when microprocessor detects signal S1 for low level, signal S2 is PWM ripples.If
Microprocessor detects signal S1 for high level, then the output of shutdown signal S2.
C () under the driving of signal S2, metal-oxide-semiconductor Q1 is opened, heater circuit work, lambda sensor temperature is raised.
In heating process, the change in duty cycle of PWM ripple signals is divided into 3 stages：(1) warm-up phase, dutycycle is one
Individual smaller value, and keep constant；(2) temperature ascent stage, dutycycle gradually increases according to certain rules；(3) temperature holding stage,
The size of dutycycle is obtained by PID regulations.
The specific works method to circuit is analyzed in more detail below.
The computing formula of VA, VB is as follows：
Wherein, resistance R1, R2, R3 meets following relation：
In formula (1), resistance RCALIt is the demarcation resistance of broad domain oxygen sensor, is known quantity, the wide area oxygen sensing of different model
Its demarcation resistance value of device is different.If VA<VB, then signal S1 is high level, microprocessor output signal S2, metal-oxide-semiconductor Q1 work,
Lambda sensor is heated；If VA>VB, then signal S1 is low level, and microprocessor forbids output signal S2, and metal-oxide-semiconductor Q1 is not
Work, stops the heating to lambda sensor.
Described microprocessor exports the drive signal S2 of metal-oxide-semiconductor Q1 in heat driven circuit according to logic judgment；MOS
The grid of pipe Q1 connects the signal S2 output ends of microprocessor, and the drain electrode of metal-oxide-semiconductor Q1 meets lambda sensor adding thermal resistance RhLow side,
The source ground of metal-oxide-semiconductor Q1.When the level of signal S2 is height, then metal-oxide-semiconductor Q1 conductings, start to RhHeating, lambda sensor temperature
Raise；When the level of signal S2 is low, then metal-oxide-semiconductor Q1 cut-offs, stop heating, the reduction of lambda sensor temperature.
Fig. 2 is signal waveforms.Signal S1 is comparator U1 output signals, is pulse signal.When signal S1 is high level
When, microprocessor output signal S2；When signal S1 is low level, then the output of microprocessor disable signal S2, S2 keeps low
Level, is invalid signals.Signal S2 is the drive signal of metal-oxide-semiconductor Q1, is the PWM ripple signals of variable duty ratio, the meter of dutycycle
Calculating formula is：
In formula (2), VREFIt is lambda sensor heating effective voltage, VBATIt is lambda sensor supply voltage, magnitude of voltage is VPP.
Under the driving of signal S2, the heating process of lambda sensor is divided into three phases：
(1) when beginning to warm up, there may be condensate on lambda sensor, lambda sensor is caused to damage.Therefore heat effective
Voltage should be maintained at a smaller magnitude of voltage V1.The dutycycle that PWM ripples are fixed in program isInitial heating is had
Effect voltage is set to V1, maintains t1s, it is desirable to t1<8s.
(2) after preheating t1s, heating effective voltage is jumped into V2, is then gradually increasing with being not more than the speed of 0.4V/s
To VPP, the PWM ripple dutycycles that voltage is gradually increasing the stage are advanced the speed no more thanIn heating voltage uphill process,
The temperature of continuous detection sensor, if having reached T in the stage sensor temperatureCAL, then heating voltage closed loop is immediately entered
The control stage.If heating voltage rises to VPP, sensor temperature is also not up to TCAL, then heating voltage be maintained at VPP, enter
The row phase III heats, until sensor temperature reaches TCAL。
(3) T is reached when detecting sensor temperatureCALAfterwards, i.e. VA>VB, heating voltage is just using PID closed-loop controls, PWM ripples
Dutycycle by PID adjust gained.
Fig. 3 is the relation curve of broad domain oxygen sensor internal resistance and temperature.Lambda sensor internal resistance has negative coefficient thermistors special
Property, and resistance value and temperature are non-linear relations.Resistance value can approximate representation be：
Resistance value when RT, RT0 are respectively temperature T, T0 in formula, Bn is material constant, and metal oxide is in itself due to temperature change
Resistivity is set to change, this is determined by characteristic of semiconductor.Lambda sensor core parts are the ZrO of tabular2Material, belongs to
The internal resistance Ri of double cell current limliting sensor, wherein lambda sensor reduces with the rising of heating-up temperature T.In figure, P points correspondence oxygen is passed
The operating point of sensor, now, heating-up temperature is TCAL, lambda sensor internal resistance is RCAL。
As shown in figure 4, workflow of the invention：Step S01 single-chip microcomputers are initialized, start program operation, step S02
In, single-chip microcomputer reads the state of signal S1, due to the present invention is directed linear broad domain oxygen sensor, lambda sensor internal resistance is with temperature
The rising of degree and reduce.Therefore, starting stage, voltage VAGradually increase, threshold voltage VBIt is constant, therefore, VA<VB, signal S1 electricity
It is height to put down.Step S03 judges whether signal S1 is high level, if so, then enter step S04, if it is not, then return to step S02,
Single-chip microcomputer continues to read the state of signal S1.In step S04, single-chip microcomputer opening signal S2 control ports, output pwm signal drives
Dynamic heat driven circuit, starts to heat lambda sensor.In step S05, single-chip microcomputer judges that oxygen sensor probe temperature is
It is no to reach calibration value TCALIf having reached, into step S06, microprocessor disable signal S2 ports；If oxygen sensor probe
Temperature is also not reaching to calibration value TCAL, then step S04 is jumped to, effectively, continuation is heated to lambda sensor for signal S2 ports
Control.In step S07, after stopping heating due to lambda sensor, probe temperature can decline, and cause signal S1 state changes, therefore
Microprocessor need to read signal S1 states, judge whether signal S1 is high level, i.e. step S08, if S1 is high level, represents and visit
Head temperature is less than calibration value TCAL, it is necessary to be heated to lambda sensor, program enters step S09.If S1 is not high level, table
Show that probe temperature is higher than calibration value TCAL, then program enter step S06, disable signal S2 ports.In step S09, microprocessor is beaten
ON signal S2 ports, carry out computer heating control, because probe temperature to be allowed rises to basis in calibration value, therefore pid algorithm as early as possible
The dutycycle of the size adjustment PWM ripples of deviation drives metal-oxide-semiconductor Q1 between actual value and desired value.To avoid heat time mistake
It is long so that probe temperature is larger with calibration value deviation, therefore programming jump is to step S07, reads signal S1 states.Purpose is to allow
Probe temperature is maintained at TCALNear.Finally, into step S10, program is terminated.
Claims (1)
1. broad domain oxygen sensor heating means, it is characterized in that：The control circuit of use includes：Lambda sensor, compare output circuit,
Another termination of internal resistance Ri mono- the termination power VCC, internal resistance Ri of microprocessor, heat driven circuit, wherein lambda sensor compares
Output circuit, lambda sensor adding thermal resistance RhHigh termination lambda sensor supply voltage VPP, adding thermal resistance RhLow side connect heating
Drive circuit；The output termination microprocessor for comparing output circuit, microprocessor drives to heat driven circuit output to be believed
Number；Described comparing output circuit includes resistance R1, R2, R3, electric capacity C1 and comparator U1, a termination power of resistance R1
The reverse input end of VCC, resistance the R1 other end connection comparator U1, and be grounded by resistance R2, the input in the same direction of comparator U1
The other end of end connected oxygen sensor internal resistance Ri, and be grounded by resistance R3；The one termination lambda sensor supply voltage of electric capacity C1
VPP, other end ground connection；The output end signal S1 of comparator U1 enters microprocessor, and microprocessor drives according to logic judgment, output
Dynamic signal S2；The heat driven circuit includes metal-oxide-semiconductor Q1, and the grid of metal-oxide-semiconductor Q1 meets drive signal S2, and metal-oxide-semiconductor Q1 drain electrodes connect
Lambda sensor adding thermal resistance RhLow side, metal-oxide-semiconductor Q1 source grounds；The input input voltage VA in the same direction of comparator U1, compares
The reverse input end input voltage VB of device U1；Heating process is as follows：
A () resistance R1, R2, R3 are fixed value, Ri reduces with the rising of temperature, and in heating process, voltage VA gradually increases
Greatly, it is being heated to desired value temperature TCALBefore, the signal S1 of comparator U1 outputs is low level, when being heated to target temperature, letter
Number S1 is high level by low transition；
B () when microprocessor detects signal S1 for low level, then output signal S2, signal S2 is PWM ripples, if microprocessor
Signal S1 is detected for high level, then the output of shutdown signal S2；
C () under the driving of signal S2, metal-oxide-semiconductor Q1 is opened, adding thermal resistance RhWork, lambda sensor temperature is raised；
In heating process, the change in duty cycle of the PWM ripple signals of signal S2 is divided into 3 stages：(1) warm-up phase, dutycycle
It is a smaller value, and keeps constant；(2) temperature ascent stage, dutycycle gradually increases according to certain rules；(3) temperature keeps
Stage, the size of dutycycle is obtained by PID regulations；
Under the driving of signal S2, the heating process of lambda sensor is divided into three phases：
(1) when beginning to warm up, heating effective voltage should be maintained at a smaller magnitude of voltage V1；PWM ripples are fixed in program
Dutycycle beInitial heating effective voltage is set to V1, t1s is maintained, it is desirable to t1<8；VPP powers for lambda sensor
Magnitude of voltage；
(2) after preheating t1s, heating effective voltage is jumped into V2, is then gradually risen to being not more than the speed of 0.4V/s
VPP, the PWM ripple dutycycles that voltage is gradually increasing the stage are advanced the speed no more thanIn heating voltage uphill process, no
The temperature of disconnected detection sensor, if having reached T in the stage sensor temperatureCAL, then heating voltage closed loop control is immediately entered
Stage processed；If heating voltage rises to VPP, sensor temperature is also not up to TCAL, then heating voltage be maintained at VPP, until
Sensor temperature reaches TCAL；
(3) T is reached when detecting sensor temperatureCALAfterwards, the dutycycle of PWM ripples adjusts gained by PID.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106150725B (en) * | 2016-08-05 | 2019-06-18 | 华中科技大学 | A kind of broad domain oxygen sensor controller |
| CN110873592B (en) * | 2018-08-31 | 2021-08-27 | 佛山市顺德区美的电热电器制造有限公司 | Detection circuit, flow sensor and household appliance |
| CN110430623B (en) * | 2019-07-09 | 2022-02-01 | 广东美的厨房电器制造有限公司 | Heating method and heating device of oxygen sensor |
| CN110839304A (en) * | 2019-12-03 | 2020-02-25 | 广州美闰陶热动电器有限公司 | Limiting current oxygen sensor heating circuit for steaming oven and heating method thereof |
| CN114138031B (en) * | 2021-11-23 | 2023-03-07 | 奇瑞汽车股份有限公司 | Method, device, storage medium, and program for controlling heating of oxygen sensor |
| CN115129106B (en) * | 2022-08-31 | 2023-11-21 | 深圳市倍轻松科技股份有限公司 | Heating circuit, control method, chip, electronic equipment and massager |
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| CN1260445A (en) * | 1998-12-09 | 2000-07-19 | 霓佳斯株式会社 | Electrifying control device and electrifying control method for heater for parts of internal combustion engine |
| CN203573233U (en) * | 2013-11-25 | 2014-04-30 | 重庆工业职业技术学院 | Energy-saving control circuit for computer radiator |
| CN203673365U (en) * | 2013-11-11 | 2014-06-25 | 扬州清玛汽车科技有限公司 | Heating and monitoring circuit for wide-range oxygen sensor |
| CN203679477U (en) * | 2013-12-11 | 2014-07-02 | 重庆市翼珑蝶科技有限公司 | Constant-temperature control circuit for internal heating electric soldering iron |
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| JP5465959B2 (en) * | 2009-09-01 | 2014-04-09 | 矢崎総業株式会社 | Electric fan control device |
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| CN1260445A (en) * | 1998-12-09 | 2000-07-19 | 霓佳斯株式会社 | Electrifying control device and electrifying control method for heater for parts of internal combustion engine |
| CN203673365U (en) * | 2013-11-11 | 2014-06-25 | 扬州清玛汽车科技有限公司 | Heating and monitoring circuit for wide-range oxygen sensor |
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