CN105141278B - The amplification module that a kind of transistor is integrated with thin film bulk acoustic wave resonator - Google Patents
The amplification module that a kind of transistor is integrated with thin film bulk acoustic wave resonator Download PDFInfo
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- CN105141278B CN105141278B CN201510430350.6A CN201510430350A CN105141278B CN 105141278 B CN105141278 B CN 105141278B CN 201510430350 A CN201510430350 A CN 201510430350A CN 105141278 B CN105141278 B CN 105141278B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
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Abstract
The invention discloses the amplification modules that a kind of transistor and thin film bulk acoustic wave resonator integrate, and including transistor and at least one set of thin film bulk acoustic wave resonator, the transistor and at least one set of thin film bulk acoustic wave resonator integrate in one structure；The transistor includes input, output end and ground terminal；One cluster film bulk acoustic wave resonator includes at least one film bulk acoustic resonator structure, and a film bulk acoustic resonator structure includes first electrode, second electrode and the dielectric thin film layer between the first electrode and the second electrode；At least described cluster film bulk acoustic wave resonator is arranged at the output terminal and/or input terminal of the transistor, for harmonic tuning.The amplification module that transistor provided in an embodiment of the present invention is integrated with thin film bulk acoustic wave resonator can carry out harmonic tuning to transistor, improve the efficiency and the linearity of amplification module.
Description
Technical field
The present invention relates to semiconductor, microelectronics and communication technique field more particularly to a kind of transistors and film bulk acoustic
The amplification module that resonator integrates.
Background technology
With the development of the communication technology, communication system is gradually to high efficiency, high-frequency, high-power, broadband and miniaturization
Directions is waited to develop.Core component of the amplifier as communication system, efficiency and the linearity directly affect the performance of communication system.
Particularly in today of resource increasingly scarcity, the efficiency for how further improving communication system is concerned.The line of communication system
Property degree directly determines communication quality, and the linearity is also one of core index of communication system.
Transistor is nonlinear device, and harmonic wave will be generated under certain output power, and the presence of harmonic wave does not only result in crystal
The decline of tube efficiency, and cause the deterioration of the linearity.Therefore, harmonic management is carried out to the power amplifier for including transistor,
Efficiency is improved as power amplifier and improves the main means of the linearity.
In the prior art, the harmonic management method of amplifier is mainly the lump formed using stub or capacitance and inductance
Resonator realizes amplifier harmonic tuning, realizes higher hamonic wave open circuit or short circuit, higher hamonic wave energy is all reflected back crystalline substance
Body pipe or the amplifying circuit including transistor, so as to improve efficiency of amplitude and the linearity.The shortcomings that above-mentioned harmonic management method
When being that the working frequency range of amplifier is less high, the volume of stub or lumped resonator is larger, in most cases can only be in crystalline substance
Harmonic tuning is carried out on match circuit outside body pipe.
Due to, there are dispersion and loss, greatly limiting the raising of efficiency of amplitude on harmonic match path.Therefore, directly
The component of harmonic management with transistor is integrated, has become the primary selection for improving crystal tube efficiency and the linearity.
But the resonator that integrated inductor and integrated capacitance are formed is integrated with transistor the drain efficiency for improving transistor and
There are following defects for the linearity：
First, it is larger to prepare difficulty for lumped inductance, it is difficult to the inductance element of high quality factor (Q values) is prepared, due to inductance
The limitation of element Q values, harmonic loss increase, and then limit the promotion of drain efficiency；2nd, the size of lumped inductance is larger, with crystalline substance
Body pipe greatly reduces the quantity of transistor on wafer after integrating, and then limits production capacity.
The content of the invention
The amplification module integrated it is an object of the invention to propose a kind of transistor and thin film bulk acoustic wave resonator, the amplification
Module directly integrates transistor and thin film bulk acoustic wave resonator, and harmonic tuning is carried out to transistor, realizes that high order is humorous
Ripple short circuit or open circuit, are all reflected back transistor by higher hamonic wave, and then can improve the efficiency and the linearity of transistor.
Transistor is integrated with thin film bulk acoustic wave resonator, is carried out harmonic tuning to transistor, is had the following advantages：
First, thin film bulk acoustic wave resonator preparation process is compatible with microelectronic technique, is easily integrated with active transistor；2nd, thin-film body sound
The Q values of wave resonator are up to thousands of, and when harmonic tuning can realize real total reflection, can reduce harmonic power loss, favorably
In the promotion of crystal tube efficiency；3rd, the size of thin film bulk acoustic wave resonator is very small, and integrated level is high, takes up space small, Bu Huiying
Ring the production capacity of transistor.
Transistor is integrated with thin film bulk acoustic wave resonator can overcome lumped inductance in the prior art and electricity completely
Hold resonator and the transistor formed it is integrated when there are the problem of.Therefore, thin film bulk acoustic wave resonator is very suitable for and transistor
It integrates, harmonic tuning is carried out to transistor, and then promotes the drain efficiency and the linearity of transistor.
Thin film bulk acoustic wave resonator is divided into solid encapsulation type thin film bulk acoustic wave resonator, cavity type thin film bulk acoustic wave resonator
With diaphragm type thin film bulk acoustic wave resonator.Figure 1A, Figure 1B and Fig. 1 C are respectively solid encapsulation type thin film bulk acoustic wave resonator, cavity
The sectional view of type thin film bulk acoustic wave resonator and diaphragm type thin film bulk acoustic wave resonator.Wherein, Figure 1A, Figure 1B and Fig. 1 C are provided
Thin film bulk acoustic wave resonator includes a film bulk acoustic resonator structure.From Figure 1A, Figure 1B and Fig. 1 C, above-mentioned three species
The thin film bulk acoustic wave resonator of type includes：Lower electrode 131, top electrode 132 and it is arranged on lower electrode 131 and top electrode 132
Between dielectric thin film layer 133.Thin film bulk acoustic wave resonator (FBAR, Film Bulk Acoustic Resonator) is Sanming City
Structure is controlled, dielectric thin film layer is sandwiched between first electrode and second electrode.Wherein, dielectric thin film layer can be piezoelectric membrane or
Ferroelectric thin film, material can be aluminium nitride, zinc oxide or barium strontium titanate.With aluminium nitride (AlN), zinc oxide (ZnO) for representative
Piezoelectric material and ferroelectric thin film barium strontium titanate (BST) under applied bias, be all very suitable for preparing high performance thin-film body
Acoustic resonator.
From Figure 1A, solid encapsulation type thin film bulk acoustic wave resonator further includes：Prague under lower electrode 131
Reflecting layer 1311 and substrate 1312.Wherein, Bragg reflecting layer includes at least three groups of Bradley grid reflecting layer, the reflection of Bradley grid
Layer includes the first sub- 13111 and second sub- reflecting layer 13112 of reflecting layer stacked gradually, the first sub- reflecting layer from top to bottom
13111 acoustic impedance is less than the acoustic impedance in the second sub- reflecting layer 13112；First sub- 13111 and second sub- reflecting layer of reflecting layer
13112 thickness is the integral multiple of a quarter of wave length of sound in the corresponding thin-film material of harmonic frequency.First son is anti-
The material for penetrating 13111 and second sub- reflecting layer 13112 of layer can be respectively silica and molybdenum.The Bragg reflecting layer can incite somebody to action
The acoustic energy that thin film dielectrics generates, which is all-trans, is emitted back towards resonator, improves the performance of resonator.
From Figure 1B, cavity type thin film bulk acoustic wave resonator further includes：Under lower electrode 131, from top to bottom according to
The support layer 1321 of secondary stacking and substrate 1322, wherein, substrate 1322 is located at the both ends of support layer 1321.The air chamber can incite somebody to action
The acoustic energy that thin film dielectrics generates, which is all-trans, is emitted back towards resonator, improves the performance of resonator.
From Fig. 1 C, diaphragm type thin film bulk acoustic wave resonator further includes：Under lower electrode 131, from top to bottom according to
The support layer 1331 of secondary stacking and substrate 1332, wherein, resonator and 1331 underside area of support layer are provided with cavity 1333, empty
Chamber 1333 is built-in air.The acoustic energy that thin film dielectrics generates can be all-trans by the air chamber is emitted back towards resonator, improves resonator
Performance.
Fig. 2 is the equivalent circuit of preferable thin film bulk acoustic wave resonator.As shown in Fig. 2, preferable film bulk acoustic resonator
The equivalent circuit of device includes direct capacitance C0, dynamic capacity CmWith dynamic inductance Lm。
The resonant frequency of thin film bulk acoustic wave resonator is by electrode material, thickness of electrode, dielectric thin-film material and dielectric film
Thickness determines.Fig. 3 is the impedance results of thin film bulk acoustic wave resonator, wherein, abscissa represents frequency；Ordinate represents impedance width
Value.As shown in figure 3, there are two resonant frequencies for thin film bulk acoustic wave resonator：Low-impedance series resonance frequency m1 and high impedance
Parallel resonance frequency m2.Wherein, low-impedance series resonance frequency is by dynamic capacity CmWith dynamic inductance LmResonance is formed；It is high
The parallel resonance frequency of impedance is by direct capacitance C0, dynamic capacity CmWith dynamic inductance LmCommon resonance is formed.Resonant frequency it
Outer frequency range, thin film bulk acoustic wave resonator are equivalent to direct capacitance.
The present invention integrates thin film bulk acoustic wave resonator and transistor, and higher hamonic wave tuning is carried out to transistor,
It realizes higher hamonic wave short circuit or open circuit, harmonic energy is all reflected back transistor, improves the efficiency and the linearity of transistor.
When thin film bulk acoustic wave resonator and coupled in parallel, and the series resonance frequency and crystal of thin film bulk acoustic wave resonator
Higher hamonic wave (the nf of pipe0, wherein f0For fundamental frequency) occur resonance when, realize higher hamonic wave short circuit, and then realize higher hamonic wave
Total reflection improves the efficiency and the linearity of transistor.
When thin film bulk acoustic wave resonator is connected with transistor, and the parallel resonance frequency and crystal of thin film bulk acoustic wave resonator
When resonance occurs for the higher hamonic wave of pipe, higher hamonic wave open circuit is realized, higher hamonic wave is all reflected back transistor, and then is inhibited humorous
The generation of wave power improves the efficiency and the linearity of transistor.
Specifically, when multiple film bulk acoustic resonator structures cascade, can broadening film bulk acoustic it is humorous
It shakes the series resonance frequency and parallel resonance frequency of device, is highly suitable for carrying out harmonic management to transistor in broadband.
For this purpose, the present invention uses following technical scheme：
The amplification module that a kind of transistor is integrated with thin film bulk acoustic wave resonator, including transistor and at least one set of thin-film body
Acoustic resonator, the transistor and at least one set of thin film bulk acoustic wave resonator integrate in one structure；
The transistor includes input, output end and ground terminal；
One cluster film bulk acoustic wave resonator includes at least one film bulk acoustic resonator structure, and a film bulk acoustic is humorous
Device structure of shaking includes first electrode, second electrode and the dielectric film between the first electrode and the second electrode
Layer；
At least one set thin film bulk acoustic wave resonator is arranged at the output terminal and/or input terminal of the transistor, is used for
Harmonic tuning.
Further, thin film bulk acoustic wave resonator described in every group includes a film bulk acoustic resonator structure, often
The first electrode of cluster film bulk acoustic wave resonator is electrically connected with the output terminal and/or input terminal of the transistor, per cluster film body
The second electrode of acoustic resonator is electrically connected with the ground terminal of the transistor.
Further, thin film bulk acoustic wave resonator described in every group includes at least two thin film bulk acoustic wave resonator knots
Structure, the first electrode of each film bulk acoustic resonator structure are sequentially connected electrically, and wherein any one film bulk acoustic is humorous
The second electrode for device structure of shaking is electrically connected with the output terminal and/or input terminal of the transistor, remaining thin film bulk acoustic wave resonator
The second electrode of structure is electrically connected with the ground terminal of the transistor.
Further, signal output part is further included.
Further, thin film bulk acoustic wave resonator described in every group includes a film bulk acoustic resonator structure, every group thin
The first electrode of membrane body acoustic resonator is electrically connected with the output terminal of the transistor, per the second of cluster film bulk acoustic wave resonator
Electrode is electrically connected with the signal output part.
Further, thin film bulk acoustic wave resonator described in every group includes at least two film bulk acoustic resonator structures, often
The first electrode of a film bulk acoustic resonator structure is sequentially connected electrically, wherein any one film bulk acoustic resonator structure
Second electrode is electrically connected with the output terminal of the transistor, the second electrode of another film bulk acoustic resonator structure with it is described
Signal output part is electrically connected, and the second electrode of remaining film bulk acoustic resonator structure and the ground terminal of the transistor are electrically connected
It connects.
Further, signal input part is further included.
Further, thin film bulk acoustic wave resonator described in every group includes a film bulk acoustic resonator structure, every group thin
The first electrode of membrane body acoustic resonator is electrically connected with the input terminal of the transistor, per the second of cluster film bulk acoustic wave resonator
Electrode is electrically connected with the signal input part.
Further, thin film bulk acoustic wave resonator described in every group includes at least two film bulk acoustic resonator structures, often
The first electrode of a film bulk acoustic resonator structure is sequentially connected electrically, wherein any one film bulk acoustic resonator structure
Second electrode is electrically connected with the input terminal of the transistor, the second electrode of another film bulk acoustic resonator structure with it is described
Signal input part is electrically connected, and the second electrode of remaining film bulk acoustic resonator structure and the ground terminal of the transistor are electrically connected
It connects.
Further, the electrical connection passes through metal electrical connection or arbitrary in capacitance, resistance or inductance by including
A kind of or at least two circuits are electrically connected.
Further, the thin film bulk acoustic wave resonator is solid encapsulation type thin film bulk acoustic wave resonator, cavity type film
Bulk acoustic wave resonator or diaphragm type thin film bulk acoustic wave resonator.
Further, the material of the dielectric thin film layer is that piezoelectric dielectric thin film silicon nitride aluminium, zinc oxide or ferroelectric media are thin
Film barium strontium titanate.
The amplification module that transistor provided in an embodiment of the present invention and thin film bulk acoustic wave resonator integrate, by directly will be thin
Membrane body acoustic resonator is integrated with transistor, carries out harmonic tuning to transistor, higher hamonic wave is all reflected back crystalline substance
Body pipe can improve the efficiency and the linearity of amplification module.
Description of the drawings
In order to clearly illustrate the technical solution of exemplary embodiment of the present, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is the part of the embodiment of the invention to be described
The attached drawing of attached drawing rather than whole, for those of ordinary skill in the art, without creative efforts, may be used also
To obtain other attached drawings according to these attached drawings.
Figure 1A, Figure 1B and Fig. 1 C are the solid encapsulation type thin film bulk acoustic wave resonator of present invention offer, cavity respectively
The sectional view of type thin film bulk acoustic wave resonator and diaphragm type thin film bulk acoustic wave resonator.
Fig. 2 is the equivalent circuit of preferable thin film bulk acoustic wave resonator.
Fig. 3 is the impedance results of thin film bulk acoustic wave resonator.
Fig. 4 A are cuing open for the amplification module that the transistor that the embodiment of the present invention one provides is integrated with thin film bulk acoustic wave resonator
View.
Fig. 4 B are the electricity for the amplification module that the transistor that the embodiment of the present invention one provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Fig. 5 A are cuing open for the amplification module that transistor provided by Embodiment 2 of the present invention is integrated with thin film bulk acoustic wave resonator
View.
Fig. 5 B are the electricity for the amplification module that transistor provided by Embodiment 2 of the present invention is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Fig. 6 is the section view for the amplification module that the transistor that the embodiment of the present invention three provides is integrated with thin film bulk acoustic wave resonator
Figure.
Fig. 7 is the section view for the amplification module that the transistor that the embodiment of the present invention four provides is integrated with thin film bulk acoustic wave resonator
Figure.
Fig. 8 A are cuing open for the amplification module that the transistor that the embodiment of the present invention five provides is integrated with thin film bulk acoustic wave resonator
View.
Fig. 8 B are the electricity for the amplification module that the transistor that the embodiment of the present invention five provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Fig. 9 A are cuing open for the amplification module that the transistor that the embodiment of the present invention six provides is integrated with thin film bulk acoustic wave resonator
View.
Fig. 9 B are the electricity for the amplification module that the transistor that the embodiment of the present invention six provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Figure 10 A are cuing open for the amplification module that the transistor that the embodiment of the present invention seven provides is integrated with thin film bulk acoustic wave resonator
View.
Figure 10 B are the electricity for the amplification module that the transistor that the embodiment of the present invention seven provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Figure 11 A are cuing open for the amplification module that the transistor that the embodiment of the present invention eight provides is integrated with thin film bulk acoustic wave resonator
View.
Figure 11 B are the thin of the transistor that the embodiment of the present invention eight provides and the amplification module that integrates of thin film bulk acoustic wave resonator
The side view of membrane body acoustic resonator.
Figure 11 C are the electricity for the amplification module that the transistor that the embodiment of the present invention eight provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Figure 12 A are cuing open for the amplification module that the transistor that the embodiment of the present invention nine provides is integrated with thin film bulk acoustic wave resonator
View.
Figure 12 B are the electricity for the amplification module that the transistor that the embodiment of the present invention nine provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention
Figure, by specific embodiment, is fully described by technical scheme.Obviously, described embodiment is of the invention
Part of the embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not doing
The every other embodiment obtained on the premise of going out creative work, each falls within protection scope of the present invention.
Embodiment one：
Fig. 4 A are cuing open for the amplification module that the transistor that the embodiment of the present invention one provides is integrated with thin film bulk acoustic wave resonator
View.As shown in Figure 4 A, which is integrated in a structure by 401 and one cluster film bulk acoustic wave resonator 402 of transistor
In.Wherein, which includes a film bulk acoustic resonator structure.
Transistor can be GaN high electron mobility transistor, GaAs high electron mobility transistor, metal oxygen
Compound field-effect transistor, lateral metal oxide field-effect transistor or junction transistor.The input, output end of transistor
It is respectively grid, drain electrode and the source electrode of transistor or for the base stage of transistor, collector and emitter with ground terminal.Below with
Transistor is GaN high electron mobility transistor, and the ground terminal of transistor, input terminal and output terminal are respectively transistor
Source electrode, be described exemplified by grid and drain electrode.
Thin film bulk acoustic wave resonator can be solid encapsulation type thin film bulk acoustic wave resonator, cavity type film bulk acoustic resonator
Device or diaphragm type thin film bulk acoustic wave resonator.Below using thin film bulk acoustic wave resonator as solid encapsulation type thin film bulk acoustic wave resonator
It is described.
As shown in Figure 4 A, transistor 401 includes：Carry on the back layer gold 403, substrate 404, buffer layer 405, gallium nitride film layer 406,
Source electrode 407, drain electrode 408, aluminum gallium nitride film layer 409, two-dimensional electron gas 410, passivation layer 411, grid 412 and first through hole 413.
Wherein, it can be the metallic film for having satisfactory electrical conductivity to carry on the back layer gold 403；Substrate 404 is located on back of the body layer gold 403, substrate 404
Material can be silicon, carborundum or sapphire；Buffer layer 405 is located on substrate 404, and the material of buffer layer 405 can be
Gallium nitride；Gallium nitride film layer 406 is located on buffer layer 405；Source electrode 407 is located on gallium nitride film layer 406 or extends
To gallium nitride film layer 406, the material of source electrode 407 can be metal, and source electrode 407 forms Europe with gallium nitride film layer 406
Nurse contacts；Drain electrode 408 be located at gallium nitride film layer 406 on or extend within gallium nitride film layer 406, drain 408 material
Material can be metal, and drain electrode 408 forms Ohmic contact with gallium nitride film layer 406；Aluminum gallium nitride film layer 409 is located at source electrode 407
On gallium nitride film layer 406 between drain electrode 408, aluminum gallium nitride film layer 409 and gallium nitride film layer 406 form hetero-junctions
Structure is formed with two-dimensional electron gas 410 at the interface of the two；Passivation layer 411 is located on aluminum gallium nitride film layer 409, passivation
The material of layer 411 can be silicon nitride, and passivation layer 411 can eliminate the surface state charge of aluminum gallium nitride film layer 409, and then reduce
With the current collapse effect for inhibiting transistor；Grid 412 is located on passivation layer 411, and extends in aluminum gallium nitride film layer 409
Surface, the material of grid 412 can be metal, and grid 412 forms Schottky contacts with aluminum gallium nitride film layer 409；Source electrode 407 is logical
It crosses first through hole 413 to be electrically connected with back of the body layer gold 403, and metal is coated on the side wall of first through hole 413.
As shown in Figure 4 A, carry on the back layer gold 403 and substrate 404 extends to the outside of drain electrode 408.Thin film bulk acoustic wave resonator 402
On the substrate 404 extended.Thin film bulk acoustic wave resonator 402 includes first electrode 414, second electrode 415 and position
Dielectric thin film layer 416 between first electrode 414 and second electrode 415.Wherein, first electrode 414 and second electrode 415
Material can be the conducting metals such as gold, platinum or molybdenum；The material of dielectric thin film layer 416 can be piezoelectric dielectric thin film silicon nitride aluminium, oxygen
Change zinc or ferroelectric media film barium strontium titanate.First electrode 414 and second electrode 415 can be respectively top electrode and lower electrode or
Electrode and top electrode under person.It is retouched below by taking first electrode 414 and second electrode 415 are respectively top electrode and lower electrode as an example
It states.Thin film bulk acoustic wave resonator 402 further includes Prague emission layer 417 between substrate 404 and lower electrode 415.Bradley
The related content of lattice emission layer 417 is described in Summary, and details are not described herein.
As shown in Figure 4 A, the top electrode 414 of thin film bulk acoustic wave resonator 402 directly connects with the drain electrode 408 of transistor 401
It touches, realizes 408 electrical connection of top electrode 414 and drain electrode.The lower electrode 415 of thin film bulk acoustic wave resonator 402 passes through the second through hole 418
It is electrically connected with back of the body layer gold 403, and metal is coated on the side wall of the second through hole 418.In addition, by thin film bulk acoustic wave resonator 402
The first separation layer 419 is provided between lower electrode 415 and Prague emission layer 417 and transistor 401, realizes electrical isolation.First
The material of separation layer 419 can be silicon nitride or silica.Since the source electrode 407 of transistor 401 is electrically connected with back of the body layer gold 403
It connects, therefore, the lower electrode 415 of thin film bulk acoustic wave resonator 402 is electrically connected with the source electrode 407 of transistor 401.
In practical applications, the source electrode ground connection of transistor is set.Therefore, the top electrode and crystal of thin film bulk acoustic wave resonator
The drain electrode electrical connection of pipe, the lower electrode ground connection of thin film bulk acoustic wave resonator set, realize thin film bulk acoustic wave resonator and be parallel to
The drain electrode of transistor.
Fig. 4 B are the electricity for the amplification module that the transistor that the embodiment of the present invention one provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 4 B, the top electrode of thin film bulk acoustic wave resonator is electrically connected with the drain electrode of transistor, thin film bulk acoustic wave resonator
Lower electrode ground connection set.When a high order of the working frequency of the series resonance frequency and transistor of thin film bulk acoustic wave resonator
When harmonic wave (such as second harmonic) frequency is consistent, the harmonic short circuits can be realized harmonic tuning, and then improve the effect of amplification module
Rate and the linearity.
Thin-film body in the amplification module that the transistor that the embodiment of the present invention one provides is integrated with thin film bulk acoustic wave resonator
The drain electrode of acoustic resonator and transistor is arranged in parallel.When the series resonance frequency of thin film bulk acoustic wave resonator and the work of transistor
, can be by this kind of harmonic short circuits of transistor when one harmonic frequency of working frequency is consistent, and then improve the efficiency of amplification module
And the linearity.By directly integrating thin film bulk acoustic wave resonator and transistor, the body of amplification module is substantially reduced
Product can reduce the volume of the power amplifier circuit based on the amplification module.
Embodiment two：
Fig. 5 A are cuing open for the amplification module that transistor provided by Embodiment 2 of the present invention is integrated with thin film bulk acoustic wave resonator
View.As shown in Figure 5A, unlike the amplification module provided from the embodiment of the present invention one, the back of the body layer gold 403 of the amplification module
The part for extending buffer layer with substrate 404 is located at the outside of source electrode 407.Thin film bulk acoustic wave resonator 402 is located at substrate 404 and prolongs
On the part of stretching.The top electrode 414 of thin film bulk acoustic wave resonator 402 passes through conducting metal with the grid 412 of transistor 401
420 realize electrical connection, in addition to realizing that conducting metal 420 and source electrode 407 are electrically insulated, between conducting metal 420 and source electrode 407
It is provided with silicon nitride layer 421.In order to reduce influence of the conducting metal 420 to the two-dimensional electron gas 410 under it, conducting metal 420
Air dielectric region 422 is provided between silicon nitride layer 421.The lower electrode 415 of thin film bulk acoustic wave resonator 402 passes through the 3rd
Through hole 423 is electrically connected with back of the body layer gold 403, and metal is coated on the side wall of third through-hole 423.In addition, lower electrode 415 and Prague hair
It penetrates between layer 417 and transistor 401 and is provided with the second separation layer 424, realize lower electrode 415 and Prague emission layer 417 and crystalline substance
Body pipe 401 is electrically isolated.The material of second separation layer 424 can be silicon nitride or silica.Due to the source electrode 407 of transistor 401
It is electrically connected with back of the body layer gold 403, therefore, the lower electrode 415 of thin film bulk acoustic wave resonator 402 is electrically connected with the source electrode 407 of transistor 401
It connects.
In practical applications, the source electrode ground connection of transistor is set.Therefore, the top electrode and crystal of thin film bulk acoustic wave resonator
The grid electrical connection of pipe, the lower electrode ground connection of thin film bulk acoustic wave resonator set, realize thin film bulk acoustic wave resonator and be parallel to
The grid of transistor.
Fig. 5 B are the electricity for the amplification module that transistor provided by Embodiment 2 of the present invention is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 5 B, the top electrode of thin film bulk acoustic wave resonator is electrically connected with the grid of transistor, thin film bulk acoustic wave resonator
Lower electrode ground connection set.When a high order of the working frequency of the series resonance frequency and transistor of thin film bulk acoustic wave resonator
When harmonic wave (such as second harmonic) frequency is consistent, the harmonic short circuits can be realized harmonic tuning, and then improve the effect of amplification module
Rate and the linearity.
Thin-film body in the amplification module that transistor provided by Embodiment 2 of the present invention is integrated with thin film bulk acoustic wave resonator
The gate connected in parallel of acoustic resonator and transistor is set, when the series resonance frequency of thin film bulk acoustic wave resonator and the work of transistor
, can be by this kind of harmonic short circuits of transistor when one harmonic frequency of working frequency is consistent, and then improve the efficiency of amplification module
And the linearity.The present embodiment substantially reduces amplification by directly integrating thin film bulk acoustic wave resonator and transistor
The volume of module can reduce the volume of the power amplifier circuit based on the amplification module.
Embodiment three：
Fig. 6 is the section view for the amplification module that the transistor that the embodiment of the present invention three provides is integrated with thin film bulk acoustic wave resonator
Figure.As shown in fig. 6, unlike amplification module provided by Embodiment 2 of the present invention, which does not include the second isolation
Layer and third through-hole, the lower electrode 415 of thin film bulk acoustic wave resonator 402 contact directly realization electricity with the source electrode 407 of transistor 401
Connection.Such structure design causes the lower electrode 415 of thin film bulk acoustic wave resonator 402 and the source electrode 407 public of transistor 401
One through hole 413 is realized and is both electrically connected with back of the body layer gold 403, third through-hole is not required.
Compared with amplification module provided by Embodiment 2 of the present invention, the embodiment of the present invention three provide amplification module pass through by
The lower electrode of thin film transistor (TFT) and the source electrode of transistor contact directly realization electrical connection, public through hole so that manufacture craft is simpler
It is single.
Example IV：
Fig. 7 is the section view for the amplification module that the transistor that the embodiment of the present invention four provides is integrated with thin film bulk acoustic wave resonator
Figure.As shown in fig. 7, unlike the amplification module provided from the embodiment of the present invention one, the back of the body layer gold 403 of the amplification module, base
Piece 404, buffer layer 405, gallium nitride film layer 406 and aluminum gallium nitride film layer 409 extend an outside part for drain electrode 408.It is thin
Membrane body acoustic resonator 402 is located at aluminum gallium nitride film layer 409 and extends on the part of drain electrode 408.In order to by film bulk acoustic
The lower electrode 415 and Prague emission layer 417 of resonator 402 are kept apart with transistor 401, lower electrode 415 and Prague
The 3rd separation layer 425 is provided between emission layer 417 and transistor 401, the material of the 3rd separation layer 425 can be aluminium nitride.
In order to by transistor 401 and extend drain electrode 408 outside gallium nitride film floor 406 and aluminum gallium nitride film layer 409 part area
Domain separation comes, transistor 401 and the portion for extending the gallium nitride film layer 406 and aluminum gallium nitride film layer 409 on the outside of drain electrode 408
Be provided with the 4th separation layer 426 between subregion, the 4th separation layer 426 can be realized by ion implanting isolates, injection from
Son can be argon ion or helium ion.
With the embodiment of the present invention one provide amplification module compared with, the embodiment of the present invention four provide amplification module pass through by
Thin film bulk acoustic wave resonator is arranged on aluminum gallium nitride film layer, need not be to buffer layer, nitridation when preparing the amplification module
Gallium film layer and aluminum gallium nitride film layer perform etching, and simplify preparation process.
Embodiment five：
Fig. 8 A are cuing open for the amplification module that the transistor that the embodiment of the present invention five provides is integrated with thin film bulk acoustic wave resonator
View.As shown in Figure 8 A, unlike the amplification module provided from the embodiment of the present invention one, it is defeated which further includes signal
Outlet 427.Amplification module does not include the second through hole, and signal output part 427 can be the conductive materials such as metal.Film bulk acoustic is humorous
The lower electrode 415 of device 402 of shaking no longer is electrically connected by the second through hole with back of the body layer gold 403, but is electrically connected with signal output part 427
It connects.
Fig. 8 B are the electricity for the amplification module that the transistor that the embodiment of the present invention five provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 8 B, the top electrode of thin film bulk acoustic wave resonator is electrically connected with the drain electrode of transistor, thin film bulk acoustic wave resonator
Lower electrode be electrically connected with signal output part.To those skilled in the art, it is readily understood that be：The amplification module is also
The choke coil formed including integrated inductor and direct current biasing end, wherein, choke coil can eliminate the direct current biasing end of amplification module
Interfering with each other between signal output part.The top electrode of thin film bulk acoustic wave resonator is electrically connected with the drain electrode of transistor, lower electricity
Pole is electrically connected with signal output part, realize thin film bulk acoustic wave resonator be series at transistor drain electrode and amplification module signal it is defeated
Between outlet.When the parallel resonance frequency and transistor of thin film bulk acoustic wave resonator working frequency a higher hamonic wave (such as
Second harmonic) frequency it is equal when, which can be opened a way, realize harmonic tuning, higher hamonic wave energy is reflected back transistor,
And then improve the efficiency and the linearity of amplification module.
Thin-film body in the amplification module that the transistor that the embodiment of the present invention five provides is integrated with thin film bulk acoustic wave resonator
Acoustic resonator is series between the drain electrode of transistor and the signal output part of amplification module.When thin film bulk acoustic wave resonator and
When joining an order harmonic frequencies of the working frequency that resonant frequency is equal to transistor, this kind of harmonic wave of transistor can be opened
Road, and then improve the efficiency and the linearity of amplification module.
Embodiment six：
Fig. 9 A are cuing open for the amplification module that the transistor that the embodiment of the present invention six provides is integrated with thin film bulk acoustic wave resonator
View.As shown in Figure 9 A, unlike amplification module provided by Embodiment 2 of the present invention, it is defeated which further includes signal
Enter end 428, not including third through-hole, signal input part 428 can be the conductive materials such as metal.Thin film bulk acoustic wave resonator 402
Lower electrode 415 be no longer electrically connected by third through-hole with back of the body layer gold 403, but be electrically connected with signal input part 428.
Fig. 9 B are the electricity for the amplification module that the transistor that the embodiment of the present invention six provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 9 B, the top electrode of thin film bulk acoustic wave resonator is electrically connected with the grid of transistor, and lower electrode is inputted with signal
End electrical connection realizes that thin film bulk acoustic wave resonator is series between the grid of transistor and the signal input part of amplification module.When
One higher hamonic wave (such as second harmonic) of the parallel resonance frequency of thin film bulk acoustic wave resonator and the working frequency of transistor frequency
When rate is equal, which can be opened a way, realize harmonic tuning, and then improve the efficiency and the linearity of amplification module.
Thin-film body in the amplification module that the transistor that the embodiment of the present invention six provides is integrated with thin film bulk acoustic wave resonator
Acoustic resonator is series between the grid of transistor and the signal input part of amplification module, when thin film bulk acoustic wave resonator and
When joining an order harmonic frequencies of the working frequency that resonant frequency is equal to transistor, this kind of harmonic wave of transistor can be opened
Road, and then improve the efficiency and the linearity of amplification module.
The amplification module that above-described embodiment one is provided to embodiment six is will be including a film bulk acoustic resonator structure
A cluster film bulk acoustic wave resonator and transistor integrate in one structure, a higher hamonic wave is tuned.It needs
It is bright, multigroup thin film bulk acoustic wave resonator including film bulk acoustic resonator structure and transistor can also be integrated
In one structure, one higher hamonic wave is tuned per cluster film bulk acoustic wave resonator, realize to multiple higher hamonic waves into
Row tuning.
Embodiment seven：
The amplification module that the embodiment of the present invention seven provides can be based on embodiment one to six any embodiment of embodiment and provide
Amplification module be improved, multigroup thin film bulk acoustic wave resonator and transistor are integrated in one structure, per cluster film body
Acoustic resonator is tuned a higher hamonic wave, realizes and multiple higher hamonic waves are tuned.Below to be based on embodiment
One amplification module provided illustrates exemplified by being improved.
Figure 10 A are cuing open for the amplification module that the transistor that the embodiment of the present invention seven provides is integrated with thin film bulk acoustic wave resonator
View.As shown in Figure 10 A, by two cluster film bulk acoustic wave resonators (the first cluster film bulk acoustic wave resonator and the second cluster film body
Acoustic resonator) it is integrated with transistor, per cluster film bulk acoustic wave resonator containing there are one resonator structures.It is first group thin
Membrane body acoustic resonator includes：First top electrode 41411, dielectric thin film layer 416, lower electrode 415 and Prague emission layer 417；
Second cluster film bulk acoustic wave resonator includes：Second top electrode 41421, dielectric thin film layer 416, lower electrode 415 and Prague hair
Penetrate layer 417.Wherein, the first top electrode 41411 is electrically connected with the second top electrode 41421.From Figure 10 A, two cluster film body sound
Wave resonator common media film layer 416, lower electrode 415, Prague emission layer 417 and through hole 418.Two cluster film bulk acoustic waves are humorous
The top electrode of device of shaking is electrically connected with the drain electrode of transistor, the source of the lower electrodes of two cluster film bulk acoustic wave resonators with transistor
Pole is electrically connected.In practical applications, the source electrode ground connection of transistor is set.Therefore, the lower electrode of two cluster film bulk acoustic wave resonators
Ground connection is set, and realizes that thin film bulk acoustic wave resonator is parallel between the drain electrode of transistor and source electrode.
Figure 10 B are the electricity for the amplification module that the transistor that the embodiment of the present invention seven provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 10 B, the top electrode of two cluster film bulk acoustic wave resonators is electrically connected with the drain electrode of transistor, two cluster film bodies
The lower electrode ground connection of acoustic resonator is set.When two cluster film bulk acoustic wave resonators series resonance frequency respectively with transistor
When two higher hamonic waves (such as second harmonic and triple-frequency harmonics) frequency of working frequency is consistent, two higher hamonic waves can be carried out
Tuning by two harmonic short circuits, improves the efficiency and the linearity of transistor.
The amplification module that transistor and the thin film bulk acoustic wave resonator that the embodiment of the present invention seven provides integrate is by two cluster films
The drain electrode of bulk acoustic wave resonator and transistor is arranged in parallel.When two cluster film bulk acoustic wave resonators series resonance frequency respectively with
, can be by two harmonic short circuits of transistor when two harmonic frequencies of the working frequency of transistor are consistent, and then improve and put
The efficiency and the linearity of big module.
The amplification module that above-described embodiment one is provided to embodiment six is will be including a film bulk acoustic resonator structure
A cluster film bulk acoustic wave resonator and transistor integrate in one structure, a higher hamonic wave is tuned.It needs
It is bright, the cluster film bulk acoustic wave resonator including multiple film bulk acoustic resonator structures and transistor can also be integrated
In one structure, all film bulk acoustic resonator structures are tuned a higher hamonic wave, being capable of broadening harmonic wave tune
Humorous bandwidth.
Embodiment eight：
The amplification module that the embodiment of the present invention eight provides can be improved based on embodiment one to example IV, by one group
At least two film bulk acoustic resonator structures are set in thin film bulk acoustic wave resonator, it being capable of broadening harmonic tuning bandwidth.Below
It is improved with the amplification module provided based on embodiment one, and a cluster film bulk acoustic wave resonator includes three film bulk acoustics
It is illustrated exemplified by resonator structure.
Figure 11 A are cuing open for the amplification module that the transistor that the embodiment of the present invention eight provides is integrated with thin film bulk acoustic wave resonator
View.Figure 11 B are the films for the amplification module that the transistor that the embodiment of the present invention eight provides is integrated with thin film bulk acoustic wave resonator
The side view of bulk acoustic wave resonator.As seen in figs. 11a and 11b, which includes three thin-film body sound
Wave resonator structure：The first film bulk acoustic resonator structure, the second film bulk acoustic resonator structure and the 3rd thin-film body sound
Wave resonator structure.The first film bulk acoustic resonator structure, the second film bulk acoustic resonator structure and the 3rd thin-film body sound
The lower electrode of wave resonator structure is respectively first time electrode 41511, second time electrode 41521 and the three times electrodes 41531, and
It is insulated from each other between electrode 41511, second time electrode 41521 and the three times electrodes 41531 once, three film bulk acoustic resonators
Device structure shares top electrode 414 and dielectric thin film layer 416.First time electrode 41511 is electrically connected with the drain electrode 408 of transistor 401,
Second time electrode 41521 is electrically connected by the second bottom electrode through hole 41541 with back of the body layer gold 403, and the three times electrodes 41531 pass through the
Three bottom electrode through hole 41551 are electrically connected with back of the body layer gold 403.Since the source electrode of transistor is electrically connected with back of the body layer gold, so, under second
Electrode and the three times electrodes are electrically connected with the source electrode of transistor, and in practical application, the source electrode ground connection of transistor is set.Therefore,
First time electrode of one film bulk acoustic resonator structure is electrically connected with the drain electrode of transistor, the second thin film bulk acoustic wave resonator knot
Second time electrode of structure and the three times electrodes of the 3rd film bulk acoustic resonator structure are grounded setting, realize three films
Bulk acoustic resonator structure is parallel to the drain electrode of transistor.
Figure 11 C are the electricity for the amplification module that the transistor that the embodiment of the present invention eight provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 11 C, the top electrode electrical connection of three film bulk acoustic resonator structures, wherein, a film bulk acoustic is humorous
The lower electrode for device structure of shaking is electrically connected with the drain electrode of transistor, and the lower electrode of other two film bulk acoustic resonator structure connects
Ground is set.When the series resonance frequency and crystal of the cluster film bulk acoustic wave resonator (i.e. three film bulk acoustic resonator structures)
When one higher hamonic wave (such as second harmonic) frequency of the working frequency of pipe is consistent, which can be realized harmonic wave tune
It is humorous, and then improve the efficiency and the linearity of amplification module.
Compared with the amplification module that the embodiment of the present invention one provides, the amplification module of the offer of the embodiment of the present invention eight passes through
One cluster film bulk acoustic wave resonator is arranged to include multiple film bulk acoustic resonator structures, can broadening film bulk acoustic it is humorous
It shakes the series resonance frequency of device and parallel resonator frequency, realizes broadband harmonic tuning, improve the efficiency and the linearity of transistor.
Embodiment nine：
A cluster film bulk acoustic wave resonator in the amplification module that above-described embodiment five and embodiment six provide only includes one
A film bulk acoustic resonator structure.The amplification module that the embodiment of the present invention nine provides can be based on embodiment five or embodiment six
Be improved, will at least two film bulk acoustic resonator structures be set in a cluster film bulk acoustic wave resonator, can broadening it is humorous
Harmonic tuning bandwidth.It is improved below with the amplification module provided based on embodiment five, and a cluster film bulk acoustic wave resonator bag
It includes and illustrates exemplified by three film bulk acoustic resonator structures.
Figure 12 A are cuing open for the amplification module that the transistor that the embodiment of the present invention nine provides is integrated with thin film bulk acoustic wave resonator
View.As illustrated in fig. 12, which includes three film bulk acoustic resonator structures：The first film body
Acoustic resonator structure, the second film bulk acoustic resonator structure and the 3rd film bulk acoustic resonator structure.The first film body
First time electrode 41512 of acoustic resonator structure is electrically connected with the drain electrode 408 of transistor 401, the second film bulk acoustic resonator
Second time electrode 41522 of device structure is electrically connected by the second bottom electrode through hole 41542 with back of the body layer gold 403, the 3rd thin-film body sound
The three times electrodes 41532 of wave resonator structure are electrically connected with signal output part 427, and the first top electrode 41412, second are powered on
41422 and the 3rd top electrode 41432 of pole is electrically connected.Since the source electrode of transistor is electrically connected with back of the body layer gold, so, the second resonator
Second time electrode of structure is electrically connected with the source electrode of transistor.In practical application, the source electrode ground connection of transistor, therefore, second is humorous
The second time electrode ground connection for device structure of shaking is set.
Figure 12 B are the electricity for the amplification module that the transistor that the embodiment of the present invention nine provides is integrated with thin film bulk acoustic wave resonator
Lu Tu.As shown in Figure 12 B, the top electrode electrical connection of three film bulk acoustic resonator structures, one of film bulk acoustic are humorous
The lower electrode for device structure of shaking is electrically connected with the drain electrode of transistor, the lower electrode and signal of another film bulk acoustic resonator structure
Output terminal is electrically connected, and the lower electrode ground connection of a remaining film bulk acoustic resonator structure is set.Work as thin film bulk acoustic wave resonator
One higher hamonic wave of the parallel resonance frequency of (i.e. three film bulk acoustic resonator structures) and the working frequency of transistor is (such as
Second harmonic) frequency it is equal when, which can be opened a way, realize harmonic tuning, higher hamonic wave energy is reflected back transistor,
And then improve the efficiency and the linearity of amplification module.
Compared with the amplification module that the embodiment of the present invention five provides, the amplification module of the offer of the embodiment of the present invention nine passes through
One cluster film bulk acoustic wave resonator is arranged to include multiple film bulk acoustic resonator structures, can broadening film bulk acoustic it is humorous
It shakes the series resonance frequency of device, realizes broadband harmonic tuning, improve the efficiency and the linearity of transistor.
Electrical connection in above-described embodiment is by contacting directly realization or being realized by metal.It needs to illustrate
, can also by include in capacitance, resistance or inductance any one or at least two circuit realize electrical connection.
The technical principle that above are only presently preferred embodiments of the present invention and used.The invention is not restricted to spies described here
Determine embodiment, the various significant changes that can carry out for a person skilled in the art, readjust and substitute all without departing from
Protection scope of the present invention.Therefore, although being described in further detail by above example to the present invention, this hair
It is bright to be not limited only to above example, without departing from the inventive concept, other more equivalence enforcements can also be included
Example, and the scope of the present invention is determined by the scope of claim.
Claims (12)
1. the amplification module that a kind of transistor is integrated with thin film bulk acoustic wave resonator, which is characterized in that including transistor and at least
One cluster film bulk acoustic wave resonator, the transistor and at least one set of thin film bulk acoustic wave resonator are integrated in a structure
In；
The transistor includes input, output end and ground terminal；
One cluster film bulk acoustic wave resonator includes at least one film bulk acoustic resonator structure, a thin film bulk acoustic wave resonator
Structure includes first electrode, second electrode and the dielectric thin film layer between the first electrode and the second electrode；
At least one set thin film bulk acoustic wave resonator is arranged at the output terminal and/or input terminal of the transistor, for harmonic wave
Tuning；
The transistor and at least one set of thin film bulk acoustic wave resonator share back of the body layer gold and on the back of the body layer gold
Substrate.
2. amplification module according to claim 1, which is characterized in that thin film bulk acoustic wave resonator described in every group includes one
The film bulk acoustic resonator structure, first electrode and the output terminal of the transistor per cluster film bulk acoustic wave resonator
And/or input terminal electrical connection, it is electrically connected per the second electrode of cluster film bulk acoustic wave resonator with the ground terminal of the transistor.
3. amplification module according to claim 1, which is characterized in that thin film bulk acoustic wave resonator described in every group is included at least
Two film bulk acoustic resonator structures, the first electrode of each film bulk acoustic resonator structure are electrically connected successively
It connects, wherein the second electrode of any one film bulk acoustic resonator structure and the output terminal and/or input terminal of the transistor
Electrical connection, the second electrode of remaining film bulk acoustic resonator structure are electrically connected with the ground terminal of the transistor.
4. amplification module according to claim 1, which is characterized in that further include signal output part.
5. amplification module according to claim 4, which is characterized in that thin film bulk acoustic wave resonator described in every group includes one
Film bulk acoustic resonator structure, first electrode and the output terminal of the transistor per cluster film bulk acoustic wave resonator are electrically connected
It connects, is electrically connected per the second electrode of cluster film bulk acoustic wave resonator with the signal output part.
6. amplification module according to claim 4, which is characterized in that thin film bulk acoustic wave resonator described in every group is included at least
Two film bulk acoustic resonator structures, the first electrode of each film bulk acoustic resonator structure is sequentially connected electrically, wherein appointing
The second electrode of one film bulk acoustic resonator structure of meaning is electrically connected with the output terminal of the transistor, another thin-film body sound
The second electrode of wave resonator structure is electrically connected with the signal output part, the second electricity of remaining film bulk acoustic resonator structure
Pole is electrically connected with the ground terminal of the transistor.
7. amplification module according to claim 1, which is characterized in that further include signal input part.
8. amplification module according to claim 7, which is characterized in that thin film bulk acoustic wave resonator described in every group includes one
Film bulk acoustic resonator structure, first electrode and the input terminal of the transistor per cluster film bulk acoustic wave resonator are electrically connected
It connects, is electrically connected per the second electrode of cluster film bulk acoustic wave resonator with the signal input part.
9. amplification module according to claim 7, which is characterized in that thin film bulk acoustic wave resonator described in every group is included at least
Two film bulk acoustic resonator structures, the first electrode of each film bulk acoustic resonator structure is sequentially connected electrically, wherein appointing
The second electrode of one film bulk acoustic resonator structure of meaning is electrically connected with the input terminal of the transistor, another thin-film body sound
The second electrode of wave resonator structure is electrically connected with the signal input part, the second electricity of remaining film bulk acoustic resonator structure
Pole is electrically connected with the ground terminal of the transistor.
10. according to any amplification module of claim 2-3,5-6 and 8-9, which is characterized in that the electrical connection passes through gold
Belong to electrical connection or by include in capacitance, resistance or inductance any one or at least two circuit be electrically connected.
11. amplification module according to claim 1, which is characterized in that the thin film bulk acoustic wave resonator is solid encapsulation
Type thin film bulk acoustic wave resonator, cavity type thin film bulk acoustic wave resonator or diaphragm type thin film bulk acoustic wave resonator.
12. amplification module according to claim 1, which is characterized in that the material of the dielectric thin film layer is piezoelectric dielectric
Thin film silicon nitride aluminium, zinc oxide or ferroelectric media film barium strontium titanate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021216382A1 (en) * | 2020-04-21 | 2021-10-28 | Qualcomm Incorporated | Heterogeneous integrated wideband high electron mobility transistor power amplifier with a single-crystal acoustic resonator/filter |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106253866A (en) * | 2016-08-03 | 2016-12-21 | 苏州能讯高能半导体有限公司 | A kind of power amplifier |
| US10601397B2 (en) * | 2017-03-24 | 2020-03-24 | Zhuhai Crystal Resonance Technologies Co., Ltd. | RF resonator electrode and membrane combinations and method of fabrication |
| CN111049490B (en) * | 2019-12-31 | 2020-09-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN115378379B (en) * | 2022-10-20 | 2023-03-28 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
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