CN105140391B - A kind of Double-charge implantation capture memory and preparation method thereof - Google Patents
A kind of Double-charge implantation capture memory and preparation method thereof Download PDFInfo
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Abstract
The invention provides a kind of Double-charge implantation capture memory and preparation method thereof.The structure of the Double-charge implantation capture memory is Pt substrates, Zr successively from the bottom to top0.5Hf0.5O2Film layer, Ba0.6Sr0.4TiO3Film layer and electrode film layer；In the Zr0.5Hf0.5O2Film layer and the Ba0.6Sr0.4TiO3Also there is the diffusion layer formed by annealing process between film layer.Diffusion layer in the present invention can be stored with trapped electron or hole under same voltage by the high low state of electric capacity；Zr is set0.5Hf0.5O2Film layer, Ba0.6Sr0.4TiO3Film layer has different thickness, and device can be made to realize different storage performances.Double-charge implantation provided by the present invention captures memory, can be applied in information storage and other kinds of integrated circuit.
Description
Technical field
The present invention relates to a kind of memory, specifically a kind of Double-charge implantation capture memory and preparation method thereof.
Background technology
Currently, the electrology characteristic of dielectric material has been subjected to researchers widely research, such as barium strontium titanate
（BaxSr1-xTiO3, it is abbreviated as BST）And barium titanate（BaTiO3, it is abbreviated as BTO）Deng.Had many document reports on
Dielectric property, electricity transportation characterization and fail-safe analysis of bst thin film etc., therefore, bst thin film is very likely applied to the next generation
In tunable microwave device and random access memories.Can be bent according to its polarity hysteresis for the bst thin film of high Ba contents
Line is fabricated to ferroelectric memory.And the new storage characteristics based on resistive is also found in these perovskite oxides.Based on BST
The ferroelectric memory and resistance-variable storing device of film are presently believed to be the replacer for most possibly turning into memory of future generation, still
Due to the complicated integrated level of resistance-variable storing device and high energy consumption, the Power Dissipation of ferroelectric material, them are caused to be not suitable for applying
Into high-frequency element.
The content of the invention
An object of the present invention is just to provide a kind of Double-charge implantation capture memory, to solve existing resistance-variable storing device
The problem of being unsuitable for being applied in high-frequency element with ferroelectric memory.
The second object of the present invention is just to provide a kind of preparation method of above-mentioned Double-charge implantation capture memory.
What an object of the present invention was realized in：A kind of Double-charge implantation captures memory, and its structure is from the bottom to top
It is Pt substrates, Zr successively0.5Hf0.5O2Film layer, Ba0.6Sr0.4TiO3Film layer and electrode film layer；In the Zr0.5Hf0.5O2Film layer and
The Ba0.6Sr0.4TiO3Also there is diffusion layer between film layer；The Zr0.5Hf0.5O2Film layer is to pass through magnetic control on Pt substrates
Made by sputtering, the Ba0.6Sr0.4TiO3Film layer is in the Zr0.5Hf0.5O2It is described by made by magnetron sputtering in film layer
Diffusion layer is to form the Ba0.6Sr0.4TiO3Formed after film layer by annealing process；The electrode film layer is Au electrodes
Film layer or Pt electrode film layers, the electrode film layer are in the Ba after the diffusion layer is formed0.6Sr0.4TiO3Lead in film layer
Cross vacuum evaporation and formed.
The Zr0.5Hf0.5O2The thickness of film layer is 0.1nm ~ 5nm.
The Zr0.5Hf0.5O2The thickness of film layer is 2nm ~ 2.5nm.
The Ba0.6Sr0.4TiO3The thickness of film layer is 100nm ~ 400nm.
The Ba0.6Sr0.4TiO3The thickness of film layer is 200nm ~ 260nm.
The electrode film layer is some uniform a diameter of 0.1mm ~ 0.3mm circular electrode film.
What the second object of the present invention was realized in：A kind of preparation method of Double-charge implantation capture memory, including
Following steps：
A, Pt substrates are pre-processed：Pt substrates are used into ultrasonic wave respectively in acetone, alcohol and deionized water successively
Clean, afterwards taking-up N2Drying；
B, pretreated Pt substrates are placed in provided with Zr0.5Hf0.5O2In the magnetron sputtering apparatus cavity of target；
C, magnetron sputtering apparatus cavity is evacuated to 1 × 10-4Pa ~4×10-4Pa, backward cavity in be passed through flow
Than for 40 ~ 50sccm：20 ~ 30sccm Ar and O2；
D, radiofrequency launcher is started, regulation interface valve makes build-up of luminance in magnetron sputtering apparatus cavity；
E, according to film deposition rate, sedimentation time is determined, Zr is deposited on Pt substrates0.5Hf0.5O2Film layer；
F, deposition there is into Zr0.5Hf0.5O2The substrate of film layer is moved to provided with Ba0.6Sr0.4TiO3The magnetron sputtering apparatus chamber of target
In vivo, repeat step c ~ e, in Zr0.5Hf0.5O2Ba is deposited in film layer0.6Sr0.4TiO3Film layer；
G, 2sccm ~ 4sccm O is passed through into annealing furnace2, deposition is had into Ba0.6Sr0.4TiO3The substrate of film layer is put into annealing
In stove, annealing furnace power supply is opened, annealing temperature and annealing time are set, in Ba0.6Sr0.4TiO3Film layer and Zr0.5Hf0.5O2Film
Diffusion layer is formed between layer；
H, the substrate after annealing is placed in vacuum evaporation equipment cavity, in the Ba of substrate0.6Sr0.4TiO3In film layer
Place mask plate；Electrode material is placed in the top of mask plate in vacuum evaporation equipment cavity；The electrode material is Au or Pt；
I, 4 × 10 will be evacuated in vacuum evaporation equipment cavity-3Pa ~5×10-3Pa；
J, the electrode material in vacuum evaporation equipment cavity is heated, in Ba0.6Sr0.4TiO3It is deposited and is formed in film layer
Electrode film layer.
A diameter of 0.1mm ~ 0.3mm circular port is evenly equipped with step h, on mask plate.
It is 700 DEG C ~ 750 DEG C that annealing temperature is set in step g, and annealing time is 20min ~ 30min.
The Zr deposited in step e on Pt substrates0.5Hf0.5O2The thickness of film layer is 0.1nm ~ 5nm；In step f,
Zr0.5Hf0.5O2The Ba deposited in film layer0.6Sr0.4TiO3The thickness of film layer is 100nm ~ 400nm.
The present invention is to be based on faint dielectric hysteretic characteristic possessed by non-ferroelectric bst thin film, by Pt substrates and
Apply one layer of Zr between bst thin film0.5Hf0.5O2（It is abbreviated as ZHO）Film, it can effectively change the size of its hysteretic characteristic；
Diffusion layer is formed between bst film layer and ZHO film layers by annealing process, can be with trapped electron or hole, in same voltage
Under stored by the high low state of electric capacity；Set ZHO film layers, bst film layer that there is different thickness, device can be realized
Different storage performances.Double-charge implantation provided by the present invention captures memory, can be applied in high-frequency element, i.e., of the invention
The device of compatible storage characteristics and microwave property is needed for being applied to has certain practical value.
Brief description of the drawings
Fig. 1 is the structural representation of Double-charge implantation capture memory provided by the present invention.
Fig. 2 is to be used to prepare Zr in the present invention0.5Hf0.5O2The structural representation of the magnetron sputtering apparatus of film layer.
Fig. 3 is the structural representation for being used to prepare the vacuum evaporation equipment of electrode film layer in the present invention.
Fig. 4 is the voltage-capacitance curve signal of the memory prepared by the embodiment of the present invention 2, embodiment 3 and comparative example 1
Figure.
Fig. 5 is the voltage-capacitance curve signal of the memory prepared by the embodiment of the present invention 4, embodiment 5 and comparative example 2
Figure.
Fig. 6 is the voltage-capacitance curve synoptic diagram of the memory prepared by the embodiment of the present invention 2.
Fig. 7 is the voltage-capacitance curve synoptic diagram of memory at different frequencies prepared by the embodiment of the present invention 2.
Fig. 8 be the memory prepared by the embodiment of the present invention 2 when m- capacitance characteristic and read-write process schematic.
Fig. 9 is the retention performance curve synoptic diagram of the memory prepared by the embodiment of the present invention 2.
Embodiment
Embodiment 1, a kind of Double-charge implantation capture memory.
As shown in figure 1, the structure of Double-charge implantation capture memory provided by the present invention is Pt linings successively from the bottom to top
Bottom 17, Zr0.5Hf0.5O2Film layer（It is abbreviated as ZHO film layers）18、Ba0.6Sr0.4TiO3Film layer（It is abbreviated as bst film layer）19 and electrode film
Layer 20.Between ZHO film layers 18 and bst film layer 19（That is two film layer intersections）Also there is diffusion layer（In figure shown in dot point
Region）.
ZHO film layers 18 are by the way that made by magnetron sputtering, bst film layer 19 is led in ZHO film layers 18 on Pt substrates 17
Cross made by magnetron sputtering, diffusion layer is to be formed after bst film layer 19 is formed by annealing process.The thickness of ZHO film layers 18
Degree can be 0.1nm ~ 5nm, it is preferred that can be 2nm ~ 2.5nm.The thickness of bst film layer 19 can be 100nm ~ 400nm, excellent
Choosing, can be 200nm ~ 260nm.Diffusion layer is formed by annealing process, that is, passes through annealing process ZHO film layers
Both 18 and bst film layer 19 interpenetrate, spread, and then the boundary to connect at both forms diffusion layer.Diffusion layer
Can be with trapped electron or hole, the thickness of ZHO film layers 18 and bst film layer 19 also has very big shadow to the storage performance of memory
Ring, it is therefore necessary to deposit the ZHO film layers 18 and bst film layer 19 of suitable thickness, the preferable device of storage performance could be made.
Electrode film layer 20 is Au electrode film layers or Pt electrode film layers, and electrode film layer 20 is in BST after diffusion layer is formed
Formed in film layer 19 by vacuum evaporation.Electrode film layer 20 is some uniform a diameter of 0.1mm ~ 0.3mm's in the present invention
Circular electrode film.
Embodiment 2, a kind of preparation method of Double-charge implantation capture memory.
The preparation method for the Double-charge implantation capture memory that the present embodiment is provided comprises the following steps：
A, the selection and processing of backing material.Pt is selected as substrate（Or substrate）, Pt substrates are put and used in acetone
Ultrasonic wave cleans 10 minutes, is then placed in alcohol and is cleaned 10 minutes with ultrasonic wave, then is taken out and be put into deionized water with clip
Cleaned 10 minutes with ultrasonic wave, take out afterwards, use nitrogen（N2）Drying.
B, pretreated Pt substrates are placed in magnetron sputtering apparatus cavity.As shown in Fig. 2 open magnetron sputtering apparatus
Cavity 6, pretreated Pt substrates 1 are fixed on the substrate table 2 in magnetron sputtering apparatus cavity 6, and the target in cavity 6
Zr is set on platform 50.5Hf0.5O2Target 4.
C, 2 × 10 will be evacuated in cavity 6 by the interface valve 7 of mechanical pump and molecular pump-4Pa；Pass through outside gas afterwards
Road system is passed through the Ar that flow is 50sccm and the O that flow is 25sccm at charge valve 8 into cavity 62。
D, radiofrequency launcher is started, regulation interface valve 7 makes build-up of luminance in magnetron sputtering apparatus cavity 6.
E, according to film deposition rate, sedimentation time is determined, the thick Zr of 2.5nm are deposited on Pt substrates0.5Hf0.5O2Film
Layer.
F, deposition there is into Zr0.5Hf0.5O2The substrate of film layer, which is quickly moved to, another is provided with Ba0.6Sr0.4TiO3The magnetic control of target splashes
In jet device cavity, repeat step c ~ e, in Zr0.5Hf0.5O2The thick Ba of 200nm are deposited in film layer0.6Sr0.4TiO3Film layer.This step
In rapid, using same magnetron sputtering device cavity, by by Zr0.5Hf0.5O2Target replaces with Ba0.6Sr0.4TiO3Target also may be used
With.
G, substrate is made annealing treatment.It is passed through 2sccm O into annealing furnace first before annealing furnace is opened2, afterwards
Annealing furnace power supply is opened, deposition is had into Ba0.6Sr0.4TiO3The substrate of film layer is put into annealing furnace, makes annealing furnace with per minute 20
DEG C speed rise to 700 DEG C, anneal 20min, in Ba0.6Sr0.4TiO3Film layer and Zr0.5Hf0.5O2Counterdiffusion is formed between film layer
Layer.Room temperature is down to 5 DEG C per minute of speed after annealing, afterwards taken out substrate from annealing furnace.
H, the substrate after annealing is placed in vacuum evaporation equipment cavity.As shown in figure 3, by the lining after annealing
Bottom 10 is placed on the graphite substrate in vacuum evaporation equipment cavity 3 and heater 13, the Ba on substrate0.6Sr0.4TiO3Film layer
It is upper to place metal mask plate, a diameter of 0.1mm circular port is evenly equipped with mask plate, after electrode film layer is made, these circles
The size in shape hole is the size of effective working region of device.Electrode material is placed in mask in vacuum evaporation equipment cavity 3
The top of version；Electrode material is spun gold in the present embodiment.
I, 5 × 10 will be evacuated in vacuum evaporation equipment cavity 3 by mechanical pump 12 and diffusion pump 11-3Pa。
J, evaporation source heater 14 is opened, the spun gold in vacuum evaporation equipment cavity 3 is heated, before heating first
Kept off with baffle plate 9 above mask plate.The mode of heating for setting spun gold is baking, bombarding voltage is adjusted, when spun gold is melted for droplet
When open baffle plate 9 rapidly, now start in Ba0.6Sr0.4TiO3Au electrode film layers are deposited in film layer.By control evaporation rate and
Evaporation time, the thickness for making Au electrode film layers are 80nm.
After the completion of Au electrode film layers evaporation, that is, form the Double-charge implantation capture storage that structure is Au/BST/ZHO/Pt
Device.Certainly, in other embodiment, Au can also be replaced by Pt.
Embodiment 3, a kind of preparation method of Double-charge implantation capture memory.
Compared with Example 2, the Zr deposited in the present embodiment0.5Hf0.5O2The thickness of film layer is 5nm, other with reality
It is identical to apply example 2.
Embodiment 4, a kind of preparation method of Double-charge implantation capture memory.
Compared with Example 2, the Ba deposited in the present embodiment0.6Sr0.4TiO3The thickness of film layer is 260nm, and other are equal
It is same as Example 2.
Embodiment 5, a kind of preparation method of Double-charge implantation capture memory.
Compared with Example 2, the Ba deposited in the present embodiment0.6Sr0.4TiO3The thickness of film layer is 350nm, and other are equal
It is same as Example 2.
Comparative example 1, a kind of preparation method of Double-charge implantation capture memory.
Compared with Example 2, the Zr deposited in this comparative example0.5Hf0.5O2The thickness of film layer is 0nm, i.e., does not deposit
Zr0.5Hf0.5O2Film layer, other are same as Example 2.
Comparative example 2, a kind of preparation method of Double-charge implantation capture memory.
Compared with Example 4, the Zr deposited in this comparative example0.5Hf0.5O2The thickness of film layer is 0nm, i.e., does not deposit
Zr0.5Hf0.5O2Film layer, other are same as Example 4.
To the memory prepared by embodiment 2（ZHO film layer thickness 2.5nm, bst film thickness 200nm）, prepared by embodiment 3
Memory（ZHO film layer thickness 5nm, bst film thickness 200nm）And the memory prepared by comparative example 1（ZHO film layer thickness 0nm,
Bst film thickness 200nm）Voltage-capacitance characteristic test is carried out, acquired results are as shown in Figure 4.To the storage prepared by embodiment 4
Device（ZHO film layer thickness 2.5nm, bst film thickness 260nm）, memory prepared by embodiment 5（ZHO film layer thickness 2.5nm, bst film
Thickness 350nm）And the memory prepared by comparative example 2（ZHO film layer thickness 0nm, bst film thickness 260nm）Carry out voltage-capacitance
Characteristic test, acquired results are as shown in Figure 5.The bst film layer of different-thickness and different-thickness it can be seen from Fig. 4 and Fig. 5
ZHO film layers, there is very big influence to the performance of memory, when ZHO thicknesses of layers is 2.5nm, and when bst film thickness degree is
During 200nm, there is obvious symmetrical hysteresis loop in the memory window of device, that is, shows that device has good storage characteristics.
As shown in fig. 6, in the memory prepared by embodiment 2（ZHO film layer thickness 2.5nm, bst film thickness 200nm）Au
Apply a positive voltage maximum on electrode film layer, when this voltage reaches a certain value of negative voltage（Flat-band voltage VF）, largely
Electronics accumulated in diffusion layer, it is now a large amount of empty when the voltage of application reaches positive flat-band voltage value by maximum negative value
Cave accumulates in diffusion layer.Fig. 6 show in more detail response of the Au/BST/ZHO/Pt structure memories element to voltage, from a point to c
Point is the Electronic saving state of element, is that the electronics in component is supplemented by hole or removes process from c points to d points, works as application
During negative voltage maximum, d points to e points are the hole storage state of the component, and e points to a points are that hole is electric in component
Son compensates and removed process.
To the memory prepared by embodiment 2（ZHO film layer thickness 2.5nm, bst film thickness 200nm）In different frequency（Respectively
For 0.3MHz, 0.5MHz, 0.7MHz and 1MHz）Lower progress voltage-capacitance characteristic test, acquired results are as shown in Figure 7.By Fig. 7
As can be seen that the voltage-capacitance curve of device essentially coincides under different frequency, therefore device has good microwave property.
By to the memory prepared by embodiment 2（ZHO film layer thickness 2.5nm, bst film thickness 200nm）Add different directions
Pulse voltage VW, then again with a small voltage VR (VR=3V) be read out, it is found that it has nonvolatile memory completely
The function of read-write-reading-erasing.A positive 15V voltages might as well first be added to the element, diffusion layer accumulates electronics,
Then V is usedRIt is read out, corresponding low state, is defined as " 1 ", then adds a negative sense 15V voltages to the component again, mutually expand
Dissipate lamination and tire out hole, then use VRIt is read out, corresponding high state, is defined " 0 ".As shown in figure 8, Fig. 8 shows that this is new
The read-write process of non-volatile Double-charge implantation capture device, as can be seen from the figure two high and low states corresponding to device with when
Between change have no significant change, therefore new non-volatile Double-charge implantation capture memory cell has nonvolatile memory completely
Basic function.The general principle of new non-volatile electric charge injection capture store-memory element storage information provided by the present invention
It is the capture reconciliation capture of electric charge, any energy supplement need not be provided it during information stores, it is a kind of non-volatile
Memory.
To the memory prepared by embodiment 2（ZHO film layer thickness 2.5nm, bst film thickness 200nm）Carry out storage characteristics survey
Examination, i.e., by the time in x-axis with logarithmic form extrapolation 1 year and 10 years, acquired results were as shown in figure 9, as can be seen from Figure 9 should
Device still shows two states that can be distinguished behind 1 year and 10 years, illustrates good retention performance.
Good storage characteristics and good holding possessed by Double-charge implantation capture memory provided by the present invention
Characteristic is mainly due to the diffusion layer that is moderate, and being formed between two film layers of ZHO film layers and bst film thickness degree.
Claims (10)
1. a kind of Double-charge implantation captures memory, it is characterized in that, its structure is Pt substrates, Zr successively from the bottom to top0.5Hf0.5O2
Film layer, Ba0.6Sr0.4TiO3Film layer and electrode film layer；In the Zr0.5Hf0.5O2Film layer and the Ba0.6Sr0.4TiO3Between film layer
Also there is diffusion layer；The Zr0.5Hf0.5O2Film layer be on Pt substrates by made by magnetron sputtering, it is described
Ba0.6Sr0.4TiO3Film layer is in the Zr0.5Hf0.5O2By the way that made by magnetron sputtering, the diffusion layer is in shape in film layer
Into the Ba0.6Sr0.4TiO3Formed after film layer by annealing process；The electrode film layer is Au electrode film layers or Pt electrode films
Layer, the electrode film layer are in the Ba after the diffusion layer is formed0.6Sr0.4TiO3By vacuum evaporation and shape in film layer
Into.
2. Double-charge implantation according to claim 1 captures memory, it is characterized in that, the Zr0.5Hf0.5O2The thickness of film layer
Spend for 0.1nm ~ 5nm.
3. Double-charge implantation according to claim 2 captures memory, it is characterized in that, the Zr0.5Hf0.5O2The thickness of film layer
Spend for 2nm ~ 2.5nm.
4. Double-charge implantation according to claim 1 captures memory, it is characterized in that, the Ba0.6Sr0.4TiO3Film layer
Thickness is 100nm ~ 400nm.
5. Double-charge implantation according to claim 4 captures memory, it is characterized in that, the Ba0.6Sr0.4TiO3Film layer
Thickness is 200nm ~ 260nm.
6. Double-charge implantation according to claim 1 captures memory, it is characterized in that, the electrode film layer is some uniform
A diameter of 0.1mm ~ 0.3mm circular electrode film.
7. a kind of preparation method of Double-charge implantation capture memory, it is characterized in that, comprise the following steps：
A, Pt substrates are pre-processed：Pt substrates are cleaned with ultrasonic wave respectively in acetone, alcohol and deionized water successively,
Taking-up N afterwards2Drying；
B, pretreated Pt substrates are placed in provided with Zr0.5Hf0.5O2In the magnetron sputtering apparatus cavity of target；
C, magnetron sputtering apparatus cavity is evacuated to 1 × 10-4Pa ~4×10-4Pa, backward cavity in be passed through flow-rate ratio as 40
~50sccm：20 ~ 30sccm Ar and O2；
D, radiofrequency launcher is started, regulation interface valve makes build-up of luminance in magnetron sputtering apparatus cavity；
E, according to film deposition rate, sedimentation time is determined, Zr is deposited on Pt substrates0.5Hf0.5O2Film layer；
F, deposition there is into Zr0.5Hf0.5O2The substrate of film layer is moved to provided with Ba0.6Sr0.4TiO3The magnetron sputtering apparatus cavity of target
It is interior, repeat step c ~ d, according to film deposition rate, sedimentation time is determined, in Zr0.5Hf0.5O2Deposited in film layer
Ba0.6Sr0.4TiO3Film layer；
G, 2sccm ~ 4sccm O is passed through into annealing furnace2, deposition is had into Ba0.6Sr0.4TiO3The substrate of film layer is put into annealing furnace
In, annealing furnace power supply is opened, annealing temperature and annealing time are set, in Ba0.6Sr0.4TiO3Film layer and Zr0.5Hf0.5O2Film layer
Between form diffusion layer；
H, the substrate after annealing is placed in vacuum evaporation equipment cavity, in the Ba of substrate0.6Sr0.4TiO3Placed in film layer
Mask plate；Electrode material is placed in the top of mask plate in vacuum evaporation equipment cavity；The electrode material is Au or Pt；
I, 4 × 10 will be evacuated in vacuum evaporation equipment cavity-3Pa ~5×10-3Pa；
J, the electrode material in vacuum evaporation equipment cavity is heated, in Ba0.6Sr0.4TiO3Evaporation forms electrode in film layer
Film layer.
8. the preparation method of Double-charge implantation capture memory according to claim 7, it is characterized in that, in step h, mask
A diameter of 0.1mm ~ 0.3mm circular port is evenly equipped with version.
9. the preparation method of Double-charge implantation capture memory according to claim 7, it is characterized in that, set in step g
Annealing temperature is 700 DEG C ~ 750 DEG C, and annealing time is 20min ~ 30min.
10. the preparation method of Double-charge implantation capture memory according to claim 7, it is characterized in that, in Pt in step e
The Zr deposited on substrate0.5Hf0.5O2The thickness of film layer is 0.1nm ~ 5nm；In step f, in Zr0.5Hf0.5O2Deposited in film layer
Ba0.6Sr0.4TiO3The thickness of film layer is 100nm ~ 400nm.
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