CN105115527A - Hybrid high-sensitivity photoelectric sensor system - Google Patents
Hybrid high-sensitivity photoelectric sensor system Download PDFInfo
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- CN105115527A CN105115527A CN201510394850.9A CN201510394850A CN105115527A CN 105115527 A CN105115527 A CN 105115527A CN 201510394850 A CN201510394850 A CN 201510394850A CN 105115527 A CN105115527 A CN 105115527A
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Abstract
The invention discloses a hybrid high-sensitivity photoelectric sensor system which comprises a light source (1), an optical element (2) connected with the light source (1), a receiver (3) connected with the optical element (2), a comparison unit (4) connected with the receiver (3), a photoelectric conversion unit (5) connected with the comparison unit (4), a signal processing unit (6) connected with the photoelectric conversion unit (5), a determination unit (7) connected with the signal processing unit (6), and an output port (8) connected with the determination unit (7). The hybrid high-sensitivity photoelectric sensor system has excellent anti-electromagnetic interference capability, and prevents the detection precision from being affected by the interference of a magnetic field. The hybrid high-sensitivity photoelectric sensor system is wide in frequency band width, high in sensitivity, excellent in linearity and minimal in dynamic error, and is more suitable for current production requirements.
Description
Technical field
The present invention relates to a kind of photoelectric sensor, specifically refer to a kind of mixed type high sensitivity photosensors system.
Background technology
Along with the raising of global manufacturing automaticity, industrial sensor becomes the key point improving productive capacity and strengthen safety.Industrial sensor has various sizes, shape and technology---and modal is the sensor designed with inductance, electric capacity, photoelectricity, magnetic force, ultrasonic technology.Each technology respectively has its length, therefore will determine to adopt any sensor according to the requirement of application.
Electro-optical pickoff is highly sensitive because of it, and detecting distance is far away, so apply widely in the detection and control of reality.But it is comparatively large in the poor and dynamic error of process neutral line degree used for current used photoelectric sensor, can not adapt to needed for current production.
Summary of the invention
The object of the invention is to overcome traditional photoelectric sensor its in the poor and defect that dynamic error is larger of the process neutral line degree used, a kind of mixed type high sensitivity photosensors system is provided.
Object of the present invention is achieved through the following technical solutions: a kind of mixed type high sensitivity photosensors system, it is characterized in that: by light source, the optical element be connected with light source, the receiver be connected with optical element, the comparing unit be connected with receiver, the photoelectric conversion unit be connected with comparing unit, the signal processing unit be connected with photoelectric conversion unit, the identifying unit be connected with signal processing unit, and the output port be connected with identifying unit forms.
Further, described signal processing unit 6 is by Sheffer stroke gate A1, Sheffer stroke gate A2, triode VT5, positive pole is connected with the positive pole of Sheffer stroke gate A1, the electric capacity C10 of minus earth, N pole is connected with the emitter of triode VT5 after resistance R17 through diode D8, P pole is the diode D7 of ground connection after resistance R9 and resistance R10 then, be serially connected in the resistance R11 between the negative pole of Sheffer stroke gate A1 and output terminal, one end is connected with the output terminal of Sheffer stroke gate A1, the other end is the resistance R12 of ground connection after resistance R13 then, positive pole is connected with the output terminal of Sheffer stroke gate A1, the electric capacity C11 that negative pole is then connected with the positive pole of Sheffer stroke gate A2 after resistance R15, N pole is connected with the negative pole of electric capacity C11, the diode D6 that P pole is then connected with the positive pole of Sheffer stroke gate A2 after electric capacity C12, the resistance R14 be in parallel with diode D6, and form with the resistance R16 that electric capacity C12 is in parallel, as the input end of this signal processing unit 6 while the positive pole of described Sheffer stroke gate A1 is connected with the tie point of resistance R10 with resistance R9, the negative pole of Sheffer stroke gate A2 is then connected with the tie point of resistance R17 with diode D8, the output terminal that the described base stage of triode VT5 is connected with the output terminal of Sheffer stroke gate A2, its grounded emitter, its collector then form this signal processing unit 6, the N pole of described diode D7 also connects+12V voltage, the P pole ground connection of diode D6.
Described comparing unit is by process chip U, transformer T, the RC filtering circuit be connected with process chip U, be serially connected in the screening circuit between a RC filtering circuit and process chip U, one end is connected with the EN pin of process chip U, the resistance R1 that the other end is then connected with the VIN pin of process chip U after resistance R3, positive pole is connected with the VIN pin of process chip U, the electric capacity C3 of minus earth, the triode trigger circuit be connected with process chip U and micro-processor interface circuit, positive pole is connected with the PVIN pin of process chip U, the polar capacitor C6 that negative pole is then connected with the non-same polarity of transformer T primary coil after diode D4, positive pole is connected with the positive pole of polar capacitor C6, the polar capacitor C5 of minus earth, and the output circuit to be connected with transformer T secondary coil forms, described micro-processor interface circuit is also connected with output circuit, and transformer T primary coil is then connected with the output terminal of triode trigger circuit.
A described RC filtering circuit comprises electric capacity C1 and resistance R2; Described electric capacity C1 and resistance R2 is in parallel, and an one common end is connected with the EN pin of process chip U, and its another common end is then connected with screening circuit.
Described screening circuit is by field effect transistor MOS1, triode VT4, unidirectional thyristor D2, be serially connected in the electric capacity C2 between the VCC pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the diode D1 between the RT pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the electric capacity C4 between the SS pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the resistance R4 between the source electrode of field effect transistor MOS1 and the base stage of triode VT4, and the resistance R5 be serially connected between the grid of field effect transistor MOS1 and the collector of triode VT4 forms; The drain electrode of described field effect transistor MOS1 is connected with the EN pin of process chip U after resistance R2, and its grid is then connected with the P pole of unidirectional thyristor D2; The control pole of described unidirectional thyristor D2 is connected with the collector of triode VT4, and its N pole is then connected with the emitter of triode VT4, and its P pole is then connected with the AGND pin of process chip U; The EN pin of described process chip U forms the input end of this comparing unit, and its PVIN pin is then connected with the tie point of resistance 1 with resistance R3.
Described triode trigger circuit are by triode VT1, and triode VT2 and diode D3 forms; Described diode D3 is serially connected between the collector of triode VT1 and the collector of triode VT2; The collector of described triode VT1 is connected with the HO pin of process chip U, and its base stage is then connected with the BST pin of process chip U, and its emitter is then connected with the base stage of triode VT2; The base stage of described triode VT2 is connected with the LO pin of process chip U, ground connection while its emitter is then connected with the PGND pin of process chip U; The Same Name of Ends of the primary coil of described transformer T is connected with the HO pin of process chip U, and its non-same polarity is then connected with the emitter of triode VT2.
Described output circuit then comprises diode D5, electric capacity C8, inductance L 1 and polar capacitor C9; The P pole of described diode D5 is connected with the non-same polarity of transformer T secondary coil, and its N pole then forms the output terminal of this comparing unit after inductance L 1; The positive pole of electric capacity C8 is connected with the N pole of diode D5, and its negative pole is then connected with the Same Name of Ends of transformer T secondary coil; The positive pole of polar capacitor C9 is connected with the N pole of diode D5 after inductance L 1, ground connection while its negative pole is then connected with the non-same polarity of transformer T secondary.
Described micro-processor interface circuit is by triode VT3, the resistance R8 that while one end is connected with the emitter of triode VT3, ground connection, the other end are then connected with the positive pole of polar capacitor C9 after resistance R7, the resistance R6 that one end is connected with the FB pin of process chip U, the other end is then connected with the tie point of resistance R8 with resistance R7, and form with the electric capacity C7 that resistance R6 is in parallel; The base stage of described triode VT3 is connected with the COMP pin of process chip U, and its collector is then connected with the FB pin of process chip U.
In order to reach better implementation result, described process chip U is preferably LM5015 integrated circuit.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) sensitivity of the photoelectric sensor that remolding sensitivity of the present invention is traditional is higher, and volume is less, therefore goes for the operating mode that installation environment is little, improves its range of application.
(2) the present invention has good anti-electromagnetic interference capability, avoids affecting its accuracy of detection because of magnetic interference.
(3) the present invention has bandwidth, highly sensitive, the linearity good and the advantage that dynamic error is little, is more applicable for current Production requirement.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention.
Fig. 2 is comparing unit electrical block diagram of the present invention.
Fig. 3 is signal processing circuit unit structural representation of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is by light source 1, the optical element 2 be connected with light source 1, the receiver 3 be connected with optical element 2, the comparing unit 4 be connected with receiver 3, the photoelectric conversion unit 5 be connected with comparing unit 4, the signal processing unit 6 be connected with photoelectric conversion unit 5, the identifying unit 7 be connected with signal processing unit 6, and the output port 8 be connected with identifying unit 7 forms.
Wherein, light source 1 detects objective emission light beam for continual giving, and it can adopt light emitting diode or laser diode to realize.Receiver 3 then for receiving the light beam that detected target reflects, and is analyzed light beam, and confirm that whether the light beam that reflects is the light beam that light source 1 sends, it can adopt photodiode or phototriode to realize.The light beam that optical element 2 then can make the better receiving target of receiver 3 reflect, it can be preferably lens, catoptron or aperture to realize.In the present embodiment, light source 1 and receiver 3 are not ground altogether, namely therebetween without the contact of electricity, so then can improve interference free performance of the present invention.
The light beam that this comparing unit 4 can reflect detection target carries out amplification process, and photoelectric conversion unit is then for changing electric signal into the light signal fed back.Signal processing unit 6 is for processing electric signal, and identifying unit 7 is for judging the signal reflected, and output port is then for exporting to result of determination outside controller or external unit.This photoelectric conversion unit 5, identifying unit 7 and output port 8 all adopt prior art to realize.
As shown in Figure 2, this comparing unit 4 by process chip U, transformer T, a RC filtering circuit, screening circuit, resistance R1, resistance R3, electric capacity C3, triode trigger circuit, micro-processor interface circuit, polar capacitor C6, diode D4, polar capacitor C5 and output circuit several composition.In order to reach better implementation result, described process chip U preferentially adopts LM5015 integrated circuit to realize.
Wherein, a described RC filtering circuit can carry out filtering process to the signal of input, and it comprises electric capacity C1 and resistance R2; Described electric capacity C1 and resistance R2 is in parallel, and an one common end is connected with the EN pin of process chip U, and its another common end is then connected with screening circuit.
Simultaneously, screening circuit be then serially connected in electric capacity C1 and resistance R2 one of them jointly between end with process chip U, and one end of resistance R1 is connected with the EN pin of process chip U, its other end is then connected with the VIN pin of process chip U after resistance R3, the positive pole of electric capacity C3 is connected with the VIN pin of process chip U, its minus earth, triode trigger circuit are then connected with process chip U respectively with micro-processor interface circuit, the positive pole of polar capacitor C6 is connected with the PVIN pin of process chip U, its negative pole is then connected with the non-same polarity of transformer T primary coil after diode D4, the positive pole of polar capacitor C5 is connected with the positive pole of polar capacitor C6, its minus earth, output circuit is then connected with transformer T secondary coil.This micro-processor interface circuit is also connected with output circuit, and transformer T primary coil is then connected with the output terminal of triode trigger circuit.
This screening circuit is by field effect transistor MOS1, and triode VT4, unidirectional thyristor D2, electric capacity C2, electric capacity C4, resistance R4 and resistance R5 form.During connection, electric capacity C2 is serially connected between the VCC pin of process chip U and the grid of field effect transistor MOS1, diode D1 is then serially connected between the RT pin of process chip U and the grid of field effect transistor MOS1, electric capacity C4 is then serially connected between the SS pin of process chip U and the grid of field effect transistor MOS1, resistance R4 is then serially connected between the source electrode of field effect transistor MOS1 and the base stage of triode VT4, and resistance R5 is serially connected between the grid of field effect transistor MOS1 and the collector of triode VT4.
Meanwhile, the drain electrode of this field effect transistor MOS1 is connected with the EN pin of process chip U after resistance R2, and its grid is then connected with the P pole of unidirectional thyristor D2.The control pole of described unidirectional thyristor D2 is connected with the collector of triode VT4, and its N pole is then connected with the emitter of triode VT4, and its P pole is then connected with the AGND pin of process chip U.The EN pin of described process chip U forms the input end of this comparing unit 4, and its PVIN pin is then connected with the tie point of resistance 1 with resistance R3.
Described triode trigger circuit are by triode VT1, and triode VT2 and diode D3 forms.Described diode D3 is serially connected between the collector of triode VT1 and the collector of triode VT2.
Triode VT1 and triode VT2 then forms a trigger, its structure is: the collector of triode VT1 is connected with the HO pin of process chip U, its base stage is then connected with the BST pin of process chip U, its emitter is then connected with the base stage of triode VT2, then can receive the signal that process chip U carries thus.And the base stage of triode VT2 is connected with the LO pin of process chip U, ground connection while its emitter is then connected with the PGND pin of process chip U.The Same Name of Ends of the primary coil of described transformer T is connected with the HO pin of process chip U, and its non-same polarity is then connected with the emitter of triode VT2.
Described micro-processor interface circuit can carry out micro-process to the signal that process chip U exports, thus it is fixed that signal is more stabilized, and it is by triode VT3, resistance R7, resistance R8 and the 2nd RC filtering circuit composition.
While one end of resistance R8 is connected with the emitter of triode VT3, ground connection, its other end are then connected with output circuit after resistance R7.The base stage of triode VT3 is connected with the COMP pin of process chip U, and its collector is then connected with the FB pin of process chip U.2nd RC filtering circuit is then serially connected between the FB pin of process chip U and the tie point of resistance R7 and resistance R8.
The resistance R6 that 2nd RC filtering circuit is connected with the FB pin of process chip U by one end, the other end is then connected with the tie point of resistance R8 with resistance R7, and form with the electric capacity C7 that resistance R6 is in parallel.
Described output circuit then comprises diode D5, electric capacity C8, inductance L 1 and polar capacitor C9.The P pole of diode D5 is connected with the non-same polarity of transformer T secondary coil, and its N pole then forms the output terminal of this comparing unit after inductance L 1.The positive pole of electric capacity C8 is connected with the N pole of diode D5, and its negative pole is then connected with the Same Name of Ends of transformer T secondary coil.The positive pole of polar capacitor C9 is connected with the N pole of diode D5 after inductance L 1, ground connection while its negative pole is then connected with the non-same polarity of transformer T secondary; The positive pole of described polar capacitor C9 is also connected with the emitter of triode VT3 after resistance R8 through resistance R7 in turn.
As shown in Figure 3, described signal processing unit 6 by Sheffer stroke gate A1, Sheffer stroke gate A2, triode VT5, electric capacity C10, electric capacity C11, electric capacity C12, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, diode D6, diode D7 and diode D8.
Wherein, Sheffer stroke gate A1, resistance R11 and resistance R13 form an oscillator, and its structure is as follows, resistance R11 is serially connected between the negative pole of Sheffer stroke gate A1 and output terminal, and one end of resistance R12 is connected with the output terminal of Sheffer stroke gate A1, its other end then ground connection after resistance R13.
The positive pole of electric capacity C10 is connected with the positive pole of Sheffer stroke gate A1, its minus earth, and the N pole of diode D7 is connected with the emitter of triode VT5 after resistance R17 through diode D8, its P pole then ground connection after resistance R9 and resistance R10.As the input end of this signal processing unit 6 while the positive pole of described Sheffer stroke gate A1 is connected with the tie point of resistance R10 with resistance R9, this resistance R9 and resistance R10 then forms the biasing circuit of Sheffer stroke gate A1, and it makes oscillator signal more stable.
Electric capacity C11 is coupling capacitance, oscillator signal exports after electric capacity C11 is coupled, the positive pole of this electric capacity C11 is connected with the output terminal of Sheffer stroke gate A1, negative pole is then connected with the positive pole of Sheffer stroke gate A2 after resistance R15, the N pole of diode D6 is connected with the negative pole of electric capacity C11, its P pole is then connected with the positive pole of Sheffer stroke gate A2 after electric capacity C12, resistance R14 and diode D6 is in parallel, and resistance R16 is then in parallel with electric capacity C12.Oscillator signal forms a fixing direct voltage output after resistance R15 and resistance R16 dividing potential drop and electric capacity C12 filtering, and the signal after process then can be made thus more stable.
The negative pole of Sheffer stroke gate A2 is then connected with the tie point of resistance R17 with diode D8; The output terminal that the described base stage of triode VT5 is connected with the output terminal of Sheffer stroke gate A2, its grounded emitter, its collector then form this signal processing unit 6; The N pole of described diode D7 also connects+12V voltage, the P pole ground connection of diode D6.
As mentioned above, just the present invention can well be realized.
Claims (8)
1. a mixed type high sensitivity photosensors system, it is characterized in that: by light source (1), the optical element (2) be connected with light source (1), the receiver (3) be connected with optical element (2), the comparing unit (4) be connected with receiver (3), the photoelectric conversion unit (5) be connected with comparing unit (4), the signal processing unit (6) be connected with photoelectric conversion unit (5), the identifying unit (7) be connected with signal processing unit (6), and the output port (8) to be connected with identifying unit (7) forms, described signal processing unit (6) is by Sheffer stroke gate A1, Sheffer stroke gate A2, triode VT5, positive pole is connected with the positive pole of Sheffer stroke gate A1, the electric capacity C10 of minus earth, N pole is connected with the emitter of triode VT5 after resistance R17 through diode D8, P pole is the diode D7 of ground connection after resistance R9 and resistance R10 then, be serially connected in the resistance R11 between the negative pole of Sheffer stroke gate A1 and output terminal, one end is connected with the output terminal of Sheffer stroke gate A1, the other end is the resistance R12 of ground connection after resistance R13 then, positive pole is connected with the output terminal of Sheffer stroke gate A1, the electric capacity C11 that negative pole is then connected with the positive pole of Sheffer stroke gate A2 after resistance R15, N pole is connected with the negative pole of electric capacity C11, the diode D6 that P pole is then connected with the positive pole of Sheffer stroke gate A2 after electric capacity C12, the resistance R14 be in parallel with diode D6, and form with the resistance R16 that electric capacity C12 is in parallel, as the input end of this signal processing unit (6) while the positive pole of described Sheffer stroke gate A1 is connected with the tie point of resistance R10 with resistance R9, the negative pole of Sheffer stroke gate A2 is then connected with the tie point of resistance R17 with diode D8, the output terminal that the described base stage of triode VT5 is connected with the output terminal of Sheffer stroke gate A2, its grounded emitter, its collector then form this signal processing unit (6), the N pole of described diode D7 also connects+12V voltage, the P pole ground connection of diode D6.
2. a kind of mixed type high sensitivity photosensors system according to claim 1, it is characterized in that: described comparing unit (4) is by process chip U, transformer T, the RC filtering circuit be connected with process chip U, be serially connected in the screening circuit between a RC filtering circuit and process chip U, one end is connected with the EN pin of process chip U, the resistance R1 that the other end is then connected with the VIN pin of process chip U after resistance R3, positive pole is connected with the VIN pin of process chip U, the electric capacity C3 of minus earth, the triode trigger circuit be connected with process chip U and micro-processor interface circuit, positive pole is connected with the PVIN pin of process chip U, the polar capacitor C6 that negative pole is then connected with the non-same polarity of transformer T primary coil after diode D4, positive pole is connected with the positive pole of polar capacitor C6, the polar capacitor C5 of minus earth, and the output circuit to be connected with transformer T secondary coil forms, described micro-processor interface circuit is also connected with output circuit, and transformer T primary coil is then connected with the output terminal of triode trigger circuit.
3. a kind of mixed type high sensitivity photosensors system according to claim 2, is characterized in that: a described RC filtering circuit comprises electric capacity C1 and resistance R2; Described electric capacity C1 and resistance R2 is in parallel, and an one common end is connected with the EN pin of process chip U, and its another common end is then connected with screening circuit.
4. a kind of mixed type high sensitivity photosensors system according to claim 3, it is characterized in that: described screening circuit is by field effect transistor MOS1, triode VT4, unidirectional thyristor D2, be serially connected in the electric capacity C2 between the VCC pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the diode D1 between the RT pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the electric capacity C4 between the SS pin of process chip U and the grid of field effect transistor MOS1, be serially connected in the resistance R4 between the source electrode of field effect transistor MOS1 and the base stage of triode VT4, and the resistance R5 be serially connected between the grid of field effect transistor MOS1 and the collector of triode VT4 forms, the drain electrode of described field effect transistor MOS1 is connected with the EN pin of process chip U after resistance R2, and its grid is then connected with the P pole of unidirectional thyristor D2, the control pole of described unidirectional thyristor D2 is connected with the collector of triode VT4, and its N pole is then connected with the emitter of triode VT4, and its P pole is then connected with the AGND pin of process chip U, the EN pin of described process chip U forms the input end of this comparing unit (4), and its PVIN pin is then connected with the tie point of resistance 1 with resistance R3.
5. a kind of mixed type high sensitivity photosensors system according to claim 4, is characterized in that: described triode trigger circuit are by triode VT1, and triode VT2 and diode D3 forms; Described diode D3 is serially connected between the collector of triode VT1 and the collector of triode VT2; The collector of described triode VT1 is connected with the HO pin of process chip U, and its base stage is then connected with the BST pin of process chip U, and its emitter is then connected with the base stage of triode VT2; The base stage of described triode VT2 is connected with the LO pin of process chip U, ground connection while its emitter is then connected with the PGND pin of process chip U; The Same Name of Ends of the primary coil of described transformer T is connected with the HO pin of process chip U, and its non-same polarity is then connected with the emitter of triode VT2.
6. a kind of mixed type high sensitivity photosensors system according to claim 5, is characterized in that: described output circuit then comprises diode D5, electric capacity C8, inductance L 1 and polar capacitor C9; The P pole of described diode D5 is connected with the non-same polarity of transformer T secondary coil, and its N pole then forms the output terminal of this comparing unit after inductance L 1; The positive pole of electric capacity C8 is connected with the N pole of diode D5, and its negative pole is then connected with the Same Name of Ends of transformer T secondary coil; The positive pole of polar capacitor C9 is connected with the N pole of diode D5 after inductance L 1, ground connection while its negative pole is then connected with the non-same polarity of transformer T secondary.
7. a kind of mixed type high sensitivity photosensors system according to claim 6, it is characterized in that: described micro-processor interface circuit is by triode VT3, the resistance R8 that while one end is connected with the emitter of triode VT3, ground connection, the other end are then connected with the positive pole of polar capacitor C9 after resistance R7, the resistance R6 that one end is connected with the FB pin of process chip U, the other end is then connected with the tie point of resistance R8 with resistance R7, and form with the electric capacity C7 that resistance R6 is in parallel; The base stage of described triode VT3 is connected with the COMP pin of process chip U, and its collector is then connected with the FB pin of process chip U.
8. a kind of mixed type high sensitivity photosensors system according to claim 7, is characterized in that: described process chip U is LM5015 integrated circuit.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107966167A (en) * | 2016-10-19 | 2018-04-27 | 上海微觅信息科技有限公司 | A kind of light signal receiving and optoelectronic detecting device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107966167A (en) * | 2016-10-19 | 2018-04-27 | 上海微觅信息科技有限公司 | A kind of light signal receiving and optoelectronic detecting device |
| CN107966167B (en) * | 2016-10-19 | 2020-06-26 | 上海云杉信息科技有限公司 | Optical signal receiving device and photoelectric detection equipment |
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Application publication date: 20151202 |