CN105097870B - Display device - Google Patents

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Publication number
CN105097870B
CN105097870B CN201510214258.6A CN201510214258A CN105097870B CN 105097870 B CN105097870 B CN 105097870B CN 201510214258 A CN201510214258 A CN 201510214258A CN 105097870 B CN105097870 B CN 105097870B
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electrode
layer
insulating layer
pixel
display device
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CN105097870A (en
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佐藤敏浩
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Japan Display Central Inc
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Japan Display Central Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Abstract

A kind of display device for including the luminescent layer with quantum dot for preventing the colour mixture of pixel and improve light extraction efficiency is provided.Display device includes：1st insulating layer is arranged on the 1st face of the 1st substrate；2nd insulating layer has multiple opening portions that the part for making the 1st insulating layer is exposed；And a plurality of light-emitting elements, it is arranged respectively in multiple opening portions, and include the 1st electrode, the luminescent layer comprising quantum dot and the 2nd electrode, 1st electrode configuration in opening portion from the 1st insulating layer to having inclined-plane in the scope on the 2nd insulating layer and on the side of the 2nd insulating layer, the luminescent layer configuration is opposed to the side of configuration on the 1st electrode in opening portion and with the inclined-plane with the 1st electrode, the 2nd electrode configuration is on the light-emitting layer.

Description

Display device
Technical field
The present invention relates to the display device including luminescent layer, the luminescent layer has quantum dot.
Background technology
For make use of electroluminescent (Electroluminescence：EL) the light-emitting component of phenomenon, by proper choice of The construction of luminescent material or light-emitting component can not only be realized white luminous, additionally it is possible to realize each color in visible light region It shines.Therefore, the exploitation of the display device for having used these light-emitting components, illuminating equipment is being promoted.
In the light-emitting component that make use of EL phenomenons, organic and inorganic and hybrid inorganic-organic luminous two can be included Pole pipe (Light Emitting Diode：LED).In a display device, light emitting diode for example by flow a current through in The anode of the pixel of rectangular configuration and each pixel share the luminescent layer set between the cathode of setting and shine.Light passes through transparent Cathode and take out, luminous with briliancy corresponding with each pixel and colourity shows image.Including this light emitting diode Display device in, have using the mode of white light-emitting layer and colour filter, by pixel respectively using RGB luminescent layer in the way of Deng.It is commonly known to have referred to as construction in white light-emitting layer.
In addition, the luminescent material as the display device for being used to include these light emitting diodes, it is proposed that various utilizations Sub- point (Quantum dot：QD material).Quantum dot is the semiconductive particles of the nm orders of magnitude, and being can be with from external energy The luminous luminescent material of source control, and be that can also be used to the luminescent material for making itself luminous from external electric field.Previous Display device in, such as propose：Utilize the device of the inorganic light-emitting diode comprising the inorganic light emitting layers with quantum dot (referring for example to Japanese Unexamined Patent Application Publication 2010-520603 publications.), possess the light comprising quantum dot on the cathode of light emitting diode and dissipate The device of floor is penetrated (referring for example to No. 5243534 publications of Japanese Patent No..) etc..
Citation
Patent document
Patent document 1：Japanese Unexamined Patent Application Publication 2010-520603 publications
Patent document 2：No. 5243534 publications of Japanese Patent No.
The content of the invention
Problems to be solved by the invention
However, above-mentioned previous display device is set to the luminescent layer containing quantum dot or light scattering layer overlapping work mostly The lit-par-lit structure formed on longitudinal direction for the removing direction of light, when applied to the high-resolution small panel with fine pixel When, it is possible to produce following problem：Since light leaks to adjacent pixel, display color mixing, it is impossible to carry out correct image Display.
Therefore, it is an object of the present invention to including having in the display device of the luminescent layer of quantum dot, by anti- It only the light leak to adjacent pixel and prevents the colour mixture of pixel, is effectively utilized from the light that luminescent layer is released as in each pixel Emergent light.In addition, another object is, little amplitude variation more manufacturing process and made with this display device of simple constitution realization The structure that light extraction efficiency from each pixel improves.
The means used to solve the problem
The display device of an embodiment of the present invention includes：1st insulating layer is arranged on the 1st face of the 1st substrate；2nd Insulating layer has multiple opening portions that the part for making the 1st insulating layer is exposed；And a plurality of light-emitting elements, it is described more A light-emitting component is arranged respectively in the multiple opening portion, and includes the 1st electrode, the luminescent layer comprising quantum dot and the 2nd Electrode, the 1st electrode configuration in the opening portion from the 1st insulating layer to the scope on the 2nd insulating layer It is interior and there is inclined-plane on the side of the 2nd insulating layer, 1st electricity of the luminescent layer configuration in the opening portion Side extremely upper and that configuration is opposed to the inclined-plane with the 1st electrode, the 2nd electrode configuration is in the luminescent layer On.
Can also be that the light-emitting component further includes color conversion layer, the side of the color conversion layer and the luminescent layer Face is adjacent to configuration on the 1st electrode in the opening portion.
Can also be that the light-emitting component further includes light emitting diode, the side of the light emitting diode and the luminescent layer Face is adjacent to configuration on the 1st electrode in the opening portion, and configures under the 2nd electrode.
Can also be that the opening portion has towards the 1st insulating layer and conical by its shape that front end attenuates.
Can also be that the 1st electrode is the reflecting electrode for making the light reflection released from the luminescent layer.
Can also be that the light-emitting component further includes colour filter, the side of the colour filter and the luminescent layer is adjacent to It configures on the 1st electrode in the opening portion.
Can also be that the multiple light-emitting component is respectively correspondingly configured with multiple pixels, the 2nd electrode is by described The reflecting electrode of pixel configuration.Alternatively, it is also possible to be, the 2nd electrode is the transparent electricity of the multiple pixel common land configuration Pole.
Can also be that the display device further includes the 3rd insulating layer, the 3rd insulating layer is covered on the 2nd insulating layer The 1st electrode end.Can also be that the 2nd electrode configuration is on the 3rd insulating layer.
Description of the drawings
Fig. 1 is the top view of the schematic configuration for the display device for representing an embodiment of the present invention.
Fig. 2 is the sectional view of the schematic configuration of the pixel in the display device for represent the 1st embodiment of the present invention.
Fig. 3 is for illustrating the top view of the schematic configuration of the pixel in display device shown in Fig. 2.
Fig. 4 is the circuit diagram of an example of the pixel circuit for the display device for representing the 1st embodiment for the present invention.
Fig. 5 is the sectional view of the variation of the pixel in the display device for represent the 1st embodiment of the present invention.
Fig. 6 is cuing open for another example of the variation of the pixel in the display device for represent the 1st embodiment of the present invention View.
Fig. 7 is the sectional view of the manufacturing process for the display device for representing an embodiment of the present invention.
Fig. 8 is the sectional view of the schematic configuration of the pixel in the display device for represent the 2nd embodiment of the present invention.
Fig. 9 is for illustrating the top view of the schematic configuration of the pixel in display device shown in Fig. 8.
Figure 10 is the sectional view of the variation of the pixel in the display device for represent the 2nd embodiment of the present invention.
Figure 11 is cuing open for another example of the variation of the pixel in the display device for represent the 2nd embodiment of the present invention View.
Figure 12 is the sectional view of the schematic configuration of the pixel in the display device for represent the 3rd embodiment of the present invention.
Figure 13 is the sectional view of the variation of the pixel in the display device for represent the 3rd embodiment of the present invention.
Figure 14 is cuing open for another example of the variation of the pixel in the display device for represent the 3rd embodiment of the present invention View.
Figure 15 is for the top view of the schematic configuration of the pixel in the display device shown in definition graph 14.
Figure 16 is the circuit diagram of an example of the pixel circuit for the display device for representing the 3rd embodiment for the present invention.
Figure 17 is cuing open for another example of the variation of the pixel in the display device for represent the 3rd embodiment of the present invention View.
Label declaration
100 display devices
10 pixels
101 TFT substrates
102 the 1st insulating layers
103 the 2nd insulating layers
103a opening portions
104 the 1st electrodes
104b inclined-planes
105 color conversion layers
106 include the luminescent layer of quantum dot
107 the 2nd electrodes
108 sealing films
109 light emitting diodes
110 the 3rd insulating layers
111 colour filters
Specific embodiment
Hereinafter, with reference to the accompanying drawings of embodiments of the present invention.In addition, the present invention is not limited to following embodiment, Can in various ways it implement in scope without departing from the spirit.
Fig. 1 shows the schematic configurations of the display device 100 of an embodiment of the present invention.The display device of present embodiment 100 include being formed at the display area 9 of substrate 7, driving IC5, FPC (Flexible Printed Circuits：Flexible printing Circuit) 6 and scan line drive circuit 4.In display area 9, it is configured with intersecting along the more of the horizontal cabling in figure Control signal wire g1-1~g1-3 and along longitudinal direction a plurality of data signal line d1~d3 of cabling.With control signal wire g1-1~ The corresponding position of the cross part of g1-3 and data signal line d1~d3, is configured with multiple pixels 10 in a matrix form.
In Fig. 1, as an example, show that each pixel is configured with 3 control signal wire g1-1~g1-3 across With the composition of 1 data signal wire d1, but this composition is not limited to.Since pixel 10 is put down along with control signal wire g1-1~g1-3 Capable direction (line direction) configuration is multiple, and multiple along direction (column direction) configuration parallel with data signal line d1, as It is whole to configure in a matrix form.In addition, though it is not shown, it is centainly electric the supplies such as power cord can also to be configured in display area 9 The wiring of pressure.Pixel circuit is configured in each pixel 10, the pixel circuit includes thin film transistor (TFT) and keeps believing from data The capacitor of the data voltage of number line d1~d3 supply.Pixel circuit is according to the control supplied from control signal wire g1-1~g1-3 Signal, controls the write-in of the data voltage supplied to pixel 10, and controls shining for pixel 10.
Pixel 10 can also include the multiple sub-pixels for sending mutually different color.For example, a pixel 10 both may be used Formed with sending three primary colors (red (R), green (G), blue (B)) respectively by each sub-pixel, can also by three primary colors (red (R), Green (G), blue (B)) on the basis of the sub-pixel of 4 kinds of colors that forms along with white (W) or yellow (Y) form.In viewing area In domain 9, each sub-pixel that multiple pixels 10 is driven to be included by selectively adjusting luminous quantity, so as to show image.
Hereinafter, for the pixel 10 in the display device 100 of an embodiment of the present invention and its construction, various implementations are shown Mode illustrates.
(the 1st embodiment)
Illustrate the composition for the pixel 10 that the display device 100 of the 1st embodiment of the present invention is included referring to Figure 2 to Figure 4. Fig. 2 is the sectional view of the schematic configuration of the pixel 10 in the display device 100 for represent the 1st embodiment of the present invention.Fig. 3 is to use In the top view for the schematic configuration for illustrating the pixel 10 in display device 100 shown in Fig. 2.Fig. 4 is represented for the present invention The circuit diagram of an example of the pixel circuit of the display device 100 of 1st embodiment.In addition, in the following description, in display device In 100, display area 9 will be configured with and watch the one side of image illustrated as on the upside of.
As shown in Fig. 2, in the display device 100 of an embodiment of the present invention, each pixel 10 includes：TFT substrate 101, Luminous thin film transistor (TFT) (TFT) including controlling pixel 10；1st insulating layer 102 covers the upper surface of TFT substrate 101 and matches somebody with somebody It puts；2nd insulating layer 103 configures the part exposing on the 1st insulating layer 102 and with the upper surface for making the 1st insulating layer 102 Opening portion；And light-emitting component, the light-emitting component include：Configuration is exposed from the opening portion by the 2nd insulating layer 103 On 1st insulating layer 102 in the scope of the 2nd insulating layer 103 the 1st electrode 104, configuration in the opening portion of the 2nd insulating layer 103 The 1st electrode 104 on the luminescent layer 106 comprising quantum dot (QD) and configure the 2nd electrode 107 on luminescent layer 106.
As shown in Fig. 2, each pixel 10 can also include color conversion layer 105, the color conversion layer 105 and luminescent layer 106 side is adjacent to configuration on the 1st electrode 104 and comprising color-converting material (Color Conversion Materials：CCM), the 1st electrode 104 is configured in the opening portion of the 2nd insulating layer 103, and the color-converting material turns Change the wavelength of the light L1 released from luminescent layer 106.Work is formed by the way that the 1st electrode 104 under color conversion layer 105 will be configured For mirror electrodes, the light L1 being emitted from luminescent layer 106 to horizontal direction can be after color conversion layer 105 be incident to by the 1st Electrode 104 reflects upward.Therefore, it is possible to make the light L2 being emitted from color conversion layer 105 upward, the top is aobvious The one side of image is watched in showing device 100.
At this moment, as shown in Fig. 2, a part for the upper surface of color conversion layer 105 has not by 106 top of covering luminescent layer The 2nd electrode 107 region that covers and expose.Be incident to the light L1 of color conversion layer 105 by configure color conversion layer 105 it Under the 1st electrode 104 reflect upward, and from not covered by the 2nd electrode 107 in the upper surface of color conversion layer 105 Region is emitted upward as light L2.
In this way, in the present embodiment, the taking-up region of the light L1 being emitted from luminescent layer 106 is the 1st electrode 104 not by the The region that 2 electrodes 107 are covered and exposed, the 1st electrode 104 are disposed on the light-emitting component under color conversion layer 105 Lower electrode, the 2nd electrode 107 is upper electrode.Since the light L1 being emitted from luminescent layer 106 is being incident in the horizontal direction After upper adjacent color conversion layer 105, reflected, and be emitted upward, energy by the 1st electrode 104 under color conversion layer 105 It takes out with enough reducing light loss.In the present embodiment, the 2nd electrode 107 for covering this 106 top of luminescent layer is configured to not Transparent mirror electrodes.Outer light can be also prevented as a result, from the external incident of display device 100 to luminescent layer 106, and is prevented The quantum dot of luminescent layer 106 is excited by the light unrelated with image display.And then the 2nd electrode by covering 106 top of luminescent layer 107 prevent and do not leak to outside by the light of color conversion layer 105, and undesirable light is prevented to be blended in light L2.
As shown in Fig. 2, the surface of the 1st electrode 104, the 2nd electrode 107,105 and the 2nd insulating layer 103 of color conversion layer by Transparent sealing film 108 covers.These compositions are covered by using sealing film 108 so that include the 1st electrode 104, luminescent layer The light-emitting component of 106 and the 2nd electrode 107 is to extraneous gas in air-tight state, the moisture being not exposed in environment.
Fig. 3 is to represent that section shown in Fig. 2 removes the top view of the composition of sealing film 108 in forming.In addition, shown in Fig. 2 Section form it is corresponding with the section composition of A-A' lines shown in Fig. 3.
As shown in Figures 2 and 3 or, in the opening portion 103a of the 2nd insulating layer 103, the side of the 2nd insulating layer 103 Wall includes inclined-plane upward, and the top is the removing direction of light.At this point, the shape of opening portion 103a can also have court To the 1st insulating layer 102 and conical by its shape that front end attenuates.In this way, by being set to the side of the 2nd insulating layer 103 towards being used as The top of the removing direction of light and towards the inclined inclined-plane in outside of pixel 10, the shape of opening portion 103a has the 1st insulating layer 102 become shape of the inclined-plane of bottom surface and the 2nd insulating layer 103 as the bathtub shape of side.In addition, herein, the 1st insulating layer 102 be the layer functioned as the planarization film of the upper surface of covering TFT substrate 101, and the 2nd insulating layer 103 is as division The layer that the dike layer of the light-emitting zone of each pixel 10 functions.
The 1st electrode 104 is configured on such opening portion 103a.1st electrode 104 is configured out of opening portion 103a To in the scope on the upper surface of the 2nd insulating layer 103 on the upper surface of 1st insulating layer 102.The 1st electrode 104 is exhausted the 2nd as a result, Have on the inclined-plane of edge layer 103 towards the top as light removing direction and the inclined inclined-plane 104b in the outside towards pixel 10. The position opposed with the inclined-plane 104b of such 1st electrode 104 in the horizontal direction is configured with the side of luminescent layer 106.Cause This, the light L1 released from the side of luminescent layer 106 to horizontal direction can be after color conversion layer 105 be incident to, by the 1st electrode 104 inclined-plane 104b reflections.That is, the light L1 that color conversion layer 105 is incident to from the side of luminescent layer 106 is turned by configuring in color The inclined-plane 104b reflections of the 1st electrode 104 under layer 105 are changed, thus towards the top of the one side as viewing image, without court To the direction of other adjacent pixels 10.Thereby, it is possible to prevent from leaking to adjacent its from the light L2 that color conversion layer 105 is emitted His pixel 10 and generate colour mixture, and the light of light emitting layer in future 106 is effectively utilized as the emergent light in each pixel 10.Cause This, the display device 100 of the 1st embodiment according to the present invention can improve the light extraction efficiency from each pixel 10.
In addition, as shown in Figures 2 and 3, the 2nd electrode 107 configured on luminescent layer 106 can also be configured to include：Match somebody with somebody Put on luminescent layer 106 and the part on the side of luminescent layer 106 be configured to from the end Chong Die with the 1st electrode 104, from shine Be configured on the side of layer 106 part on the upper surface of the 1st insulating layer 102 and from configuration in the 1st insulating layer 102 The end being configured in the scope on part to the inclined-plane of the 2nd insulating layer 103 on upper surface on the upper surface of the 2nd insulating layer 103 Portion.At this moment, end and the 2nd electrode 107 of the 1st electrode 104 on the upper surface of the 1st insulating layer 102 are configured in order to prevent Short circuit, between the end of the 1st electrode 104 and the 2nd electrode 107, covering the 1st electrode 104 end configuration luminescent layer 106 until On the upper surface of 1st insulating layer 102.
1st electrode 104 can also include following composition, configure the end on the 2nd insulating layer 103 through being formed from the 2nd Through electrode 104a in the contact hole of 103 and the 1st insulating layer 102 of insulating layer, the film crystal with being formed at TFT substrate 101 Source electrode or the drain electrode connection of pipe.In addition, the 2nd electrode 107 can also include following composition, configure on the 1st insulating layer 102 Through electrode 107a of the part through being formed from the contact hole of the 1st insulating layer 102, the control with being formed at TFT substrate 101 Pressure-wire is connected and is grounded.
Hereinafter, Fig. 4 (a) of reference and (b) illustrate an example that the circuit for the pixel 10 for including such composition is formed.At this In, in (a) and (b) of Fig. 4, the composition including luminescent layer 106 is illustrated as " QD ", the luminescent layer 106 includes configuration and exists Quantum dot (QD) between 1st electrode 104 and the 2nd electrode 107.
(a) of Fig. 4 is the electric leakage of the 1st electrode 104 and thin film transistor (TFT) (driving transistor DRT) that represent luminescent layer 106 The circuit diagram of the composition of pole connection, the thin film transistor (TFT) and each pixel 10 of TFT substrate 101 accordingly configure.Such as Fig. 4 (a) shown in, the 1st electrode 104 is connected with the drain electrode of driving transistor DRT, the 2nd electrode 107 with control pressure-wire Vq be connected and Ground connection.In addition, in (a) of Fig. 4, the threshold voltage of driving transistor DRT is illustrated as " Vth ".
As shown in (a) of Fig. 4, row selecting switch SST is configured in each pixel 10, the row selecting switch SST includes The source electrode that is connected with image signal line Vsig, the grid electricity with the gate line Vs gate electrodes being connected and with driving transistor DRT The drain electrode that pole is connected with holding capacitor Cs.Can also be that one end of holding capacitor Cs connects with the drain electrode of row selecting switch SST It connects, the other end is connected with power cord Vdd and is formed.Alternatively, it is also possible to be, source electrode and the power cord Vdd of driving transistor DRT It connects and forms.Due to including such composition, the potential difference of the 1st electrode 104 and the 2nd electrode 107, control figure 4 can be utilized (a) shown in " QD " luminescent layer 106 shine.
It is in addition, the circuit of the pixel 10 shown in (b) of Fig. 4 forms the difference formed with the circuit shown in (a) of Fig. 4 Do not include driving transistor DRT this point.Or, the 1st electrode 104 and the row selection of " QD " are opened as shown in (b) of Fig. 4 The drain electrode connection of SST is closed, the 2nd electrode 107 of " QD " is connected with control pressure-wire Vq.Circuit structure as shown in (b) of Fig. 4 Into even if not including in the case of driving transistor DRT, can also utilize the 1st electrode 104 and the 2nd electrode in each pixel 10 107 potential difference, the luminescent layer 106 of control " QD " shown in Fig. 4 shine.In addition, in (b) of Fig. 4, pass through picture signal Line Vsig is stored in the energy of the charge in holding capacitor Cs as the luminescent layer of " QD ".Using being stored in holding capacitor Cs The quantity of electric charge carry out grayscale show.In order to significantly increase the capacity of holding capacitor Cs, by using High-K insulating materials (Gao Jie The insulating materials of electric constant) the surface areas extended architecture such as lit-par-lit structure, 3-dimensional multi-layered D structure, the hair of " QD " can be stored The energy of photosphere.
In this way, in Fig. 2 into the display device 100 of the 1st embodiment of the present invention shown in Fig. 4, illustrate comprising amount Shining for the luminescent layer 106 of son point is formed by what the potential difference of the 1st electrode 104 and the 2nd electrode 107 controlled.But include quantum The luminescent layer 106 of point is not limited to such composition using electric energy, can also have following form：By using light booster dose Sub-, control luminescent layer 106 shines.Hereinafter, as the present invention the 1st embodiment pixel 10 variation, with reference to Fig. 5 And Fig. 6, illustrate the luminous composition using luminescent layer 106 of the photocontrol comprising quantum dot.
Fig. 5 and Fig. 6 is the section view of the variation of the pixel 10 for the display device 100 for representing the 1st embodiment of the present invention Figure.The picture of the composition and the 1st embodiment shown in Fig. 2 of the pixel 10 of the 1st embodiment of the present invention shown in Fig. 5 and Fig. 6 The difference of the composition of element 10 is, includes between the 1st electrode 104 and the 2nd electrode 107 to the luminescent layer 106 comprising quantum dot Supply 109 this point of light emitting diode of light.Therefore, below, on the composition identical with the above-mentioned composition shown in Fig. 2 to Fig. 4, Description is omitted.
Fig. 5 is the sectional view of the pixel 10 for the display device 100a for representing the 1st embodiment of the present invention.As shown in figure 5, Between the 1st electrode 104 and the 2nd electrode 107, the 1st luminescent layer 106-1, light emitting diode 109 comprising quantum dot and amount is included 2nd luminescent layer 106-2 of son point can be adjacent to configuration on the 1st electrode 104 in the horizontal direction in order.Herein, Fig. 5 Shown the 1st luminescent layer 106-1, light emitting diode 109 and the 2nd luminescent layer 106-2 matching somebody with somebody in luminescent layer 106 shown in Fig. 2 Seated position is pressed in a manner that the 1st luminescent layer 106-1 is configured in the one side for being emitted inclined-plane 104b of the light L1 towards the 1st electrode 104 Order is arranged in the horizontal direction, their upper surface is covered by the 2nd electrode 107.
The light that 1st luminescent layer 106-1 receives to generate from light emitting diode 109 in the side contacted with light emitting diode 109 The offer of L3 and release light L1.The short of the 1st electrode 104 on the 1st insulating layer 102 and the 2nd electrode 107 is configured in order to prevent Road covers the end of the 1st electrode 104 and configures the 2nd luminescent layer 106-2 until on the upper surface of the 1st insulating layer 102.In addition, the The side of the one side not contacted with light emitting diode 109 of 2 luminescent layer 106-2 is covered by the 2nd electrode 107.
When making current flow through the 1st electrode 104 and the 2nd electrode 107 and light emitting diode 109 is made to shine, from light-emitting diodes The light L3 that pipe 109 is released is incident in the 1st adjacent in the horizontal direction luminescent layer 106-1.1st luminescent layer 106-1 is by coming from The light L3 excitation quantum points of light emitting diode 109, and release light L1.Herein, light emitting diode 109 can also be generated The ultraviolet LED of UV light.In addition, the 1st luminescent layer 106-1 can also have light of the conversion from light emitting diode 109 The function of the Wavelength distribution of L3.
In addition, in the composition of the variation shown in Fig. 5, it can also be in the configuration bit of color conversion layer 105 shown in Fig. 2 Put configuration colour filter 111.By being adjacent to configuration colour filter 111 with the side of the 1st luminescent layer 106-1, can make to shine from the 1st Layer 106-1 is not incident to colour filter 111 with revealing to the light L1 that horizontal direction is emitted.By configuring under colour filter 111 The 1st electrode 104 reflection, can be emitted the top by the light L4 of colour filter 111 to the taking-up side for being used as light.
In addition, Fig. 6 is the sectional view of the pixel 10 for the display device 100b for representing the 1st embodiment of the present invention.Such as Fig. 6 It is shown, be emitted light emitting diode 109 light L3 side be adjacent to configuration luminescent layer 106 can also be configured to covering until On the inclined-plane 104b of 1st electrode 104.At this moment, a part for the upper surface of luminescent layer 106 is not covered by the 2nd electrode 107 and revealed Go out, and form the taking-up region as light L1.In this way, in the variation shown in Fig. 6, the luminescent layer 106 comprising quantum dot It can be only fitted to the allocation position of the 1st luminescent layer 106-1 and colour filter 111 shown in Fig. 5.
In addition, in the composition of the variation shown in Fig. 6, it can also be in the configuration of the 2nd luminescent layer 106-2 shown in Fig. 5 Position configures the 2nd insulating layer 103.The 2nd insulating layer 103 is configured by covering the end of the 1st electrode 104, can prevent the 1st electricity Short circuit between 104 and the 2nd electrode 107 of pole.
In the same manner as the variation shown in Fig. 5, the variation shown in Fig. 6 includes following form：From being configured at the 1st electrode The light L3 that light emitting diode 109 between 104 and the 2nd electrode 107 generates is incident to luminescent layer adjacent in the horizontal direction 106.The light L3 excitation quantum points of the spontaneous optical diode 109 of 106 origin of luminescent layer, and release light L1.Herein, luminescent layer 106 There can also be the Wavelength distribution for converting the light L3 from light emitting diode 109.
In the composition of the variation shown in Fig. 6, since configuration luminescent layer 106 is until the inclined-plane 104b of the 1st electrode 104 On, the light L1 generated in luminescent layer 106 is reflected by being configured at the 1st electrode 104 under luminescent layer 106, and never by the 2nd electricity Region on the upper surface for the luminescent layer 106 that pole 107 covers is emitted upward.
In addition, as shown in fig. 6, colour filter 111 can also be configured on the sealing film 108 being configured on luminescent layer 106.With Variation shown in Fig. 5 is compared, since colour filter 111 is not adjacent to point by the variation shown in Fig. 6 with the side of luminescent layer 106 From configuration in sealing film 108, polluted in colour filter 111 luminescent layer 106 can not be allowed to be contaminated leading The influence of cause.The light L1 generated from luminescent layer 106 is by colour filter 111, so as to take out the light for each color for forming each pixel 10 L4。
In this way, the luminescent layer 106 comprising quantum dot both can as shown in Figures 2 to 4, including with electric energy excitation quantum point simultaneously Luminous composition is allowed to, using light excitation quantum point and can also put the light that converted wavelength as shown in Figure 5 and Figure 6 The composition gone out.
Hereinafter, the manufacture work of the display device 100 of an embodiment of the present invention for including above-mentioned composition is illustrated with reference to Fig. 7 Sequence.
(manufacturing process of display device 100)
(a) of Fig. 7 is the manufacturing process of the pixel 10 for the display device 100 for representing an embodiment of the present invention to (e) Sectional view.(a) of Fig. 7 forms corresponding with the section composition of B-B' lines shown in Fig. 3 to the section shown in (e).Herein, Fig. 7 (a) to (e) represent and 10 corresponding section of pixel composition.Therefore, in actual manufacturing process or, On one piece of manufacture substrate, formed to composition respectively comprising multiple pixels 10 with 100 corresponding composition of multiple display, and Most at last each 100 singualtion of display device and take out, so as to form display device 100.
As shown in (a) of Fig. 7, first, in the manufacturing process of the display device 100 of an embodiment of the present invention, in TFT After the 1st insulating layer 102 and the 2nd insulating layer 103 have been stacked gradually on substrate 101, remove the 2nd insulating layer 103 a part and shape Into the opening portion 103a for exposing the upper surface of the 1st insulating layer 102.
Include the TFT driving circuits for being formed with pixel circuit on the substrate of the composition such as in glass substrate of TFT substrate 101 Layer, as described above, the film that the pixel circuit includes a plurality of wiring and connected respectively with a plurality of wiring is brilliant such as Fig. 4 illustratively The light emitting controls element such as body pipe.As the planarization film of TFT drive circuit layers as covering, the 1st insulating layer 102 is formed.1st Insulating layer 102 can use photoresist etc. such as acrylic resin, polyimide resin, utilize skill known to spin coating etc. Art is formed.
The 2nd insulating layer 103 is formed on the 1st insulating layer 102.2nd insulating layer 103 for example can both use acrylic acid tree The photoresists such as fat, polyimide resin are formed, and can also use the formation such as silica, silicon nitride.In the 1st insulating layer 102 Entire surface on formed the 2nd insulating layer 103 after, by patterning, on the 2nd insulating layer 103 formed make the 1st insulating layer 102 The opening portion 103a that a part of upper surface is exposed.
Opening portion 103a is respectively formed at region corresponding with the light-emitting zone of each pixel 10, and is formed as having towards the 1 insulating layer 102 and conical by its shape that front end attenuates.As a result, in the 103a of opening portion, the side of the 2nd insulating layer 103 is formed as having The outside of oriented pixel 10 tilts and inclined-plane upward.At this point, the shape of opening portion 103a can also be formed as the 1st insulation Layer 102 becomes bottom surface, the inclined-plane of the 2nd insulating layer 103 becomes shape as the bathtub shape of side.Preferably, the such 2nd The inclined-plane of insulating layer 103 has with respect to the horizontal plane 30 degree or more of angle.In addition, the cone shape on the 2nd insulating layer 103 Into, for example, can use formed from photosensitive acrylics or polyimide resin as material with photo-mask process when, When the development and baking after progress is photosensitive, taper configurations are automatically formed.Implement repeatedly to toast by changing temperature, it can Carry out the control of cone angle.
On the 1st insulating layer 102 formed in such a way and the 2nd insulating layer 103, being further formed makes TFT substrate 101 On each pixel circuit thin film transistor (TFT) and wiring a part expose multiple contact holes.In aftermentioned process, more It is formed to connect thin film transistor (TFT) and wiring of the 1st electrode 104 and the 2nd electrode 107 and each pixel circuit etc. in a contact hole Through electrode 104a, the 107a connect.
Then, as shown in (b) of Fig. 7, from the 1st insulating layer 102 of part formed by opening portion 103a openings to The 1st electrode 104 is formed in scope on 2nd insulating layer 103.1st electrode 104 is formed as the composition such as using silver, aluminium and reflects Electrode (mirror electrodes).1st electrode 104 is formed as the composition as illustrating using Fig. 2 and Fig. 3 by patterning.Pass through 1st electrode 104 is formed as configuration from the upper surface of the 1st insulating layer 102, on the upper surface of the 2nd insulating layer, thus to exist On the inclined-plane of 2nd insulating layer 103, the inclined-plane 104b of the 1st electrode 104 is formed in a manner of along the inclined-plane of the 2nd insulating layer 103. At this moment, together with the formation of the 1st electrode 104, the also shape in the contact hole for being formed at the 1st insulating layer 102 and the 2nd insulating layer 103 Into through electrode 104a.
The luminescent layer 106 for including quantum dot is formed on the 1st electrode 104 formed in such a way.Include quantum dot Luminescent layer 106 is formed as：In region in the 103a of opening portion, side is configured opposed with the inclined-plane 104b of the 1st electrode 104 Position.Hereinafter, illustrate comprising the composition of luminescent layer 106 of quantum dot and its an example of manufacturing method.
Luminescent layer 106 comprising quantum dot is configured to include photopermeability component and semiconductive particles fluorophor.Semiconductor Microparticle fluorescence body is the component for including semiconductor microcrystallite particle, and the semiconductor microcrystallite particle is corresponding with " quantum dot ".Semiconductor microactuator Grain fluorophor is distributed in the inside of luminescent layer 106.Preferably, photopermeability component is to make semiconductive particles fluorophor The component of sealing in the state of being distributed inside it, by the material structure for not absorbing the light sent from semiconductive particles fluorophor Into.
Preferably, the photopermeability component of luminescent layer 106 uses the material for being not through moisture or oxygen.Thereby, it is possible to anti- Sealing point or oxygen enter the inside of luminescent layer 106.As the material of this photopermeability component, for example, can use silicones, The photopermeabilities resinous wood such as epoxy resin, acrylic resin, fluororesin, polycarbonate resin, polyimide resin, Lauxite Photopermeabilities inorganic material such as material or aluminium oxide, silica, yttrium etc..
The semiconductive particles fluorophor of luminescent layer 106 can also have the construction for being commonly referred to as core construction.With core structure The semiconductive particles fluorophor made includes core portion.Core portion is semiconductor microcrystallite particle (quantum dot) structure of number nm or so by its grain size Into, and form the illumination region that electronics occurs in conjunction with hole and shone.
In addition, semiconductive particles fluorophor can also have the construction for being commonly referred to as core shell construction.With core shell structure The semiconductive particles fluorophor made includes the shell portion in the core portion and covering core portion as illumination region.Herein, shell portion with core portion Different materials is formed, and is the position with the dysgenic defencive function that core portion is protected to be subject to from the external world.Preferably It is that shell portion is made of the band-gap energy material bigger than core portion.By such composition, electronics and hole have been played to semiconductor microactuator The limitation function in the core portion of grain fluorophor, can reduce the loss in electronics and hole as caused by non-luminescent transition and luminous efficiency It improves.
Herein or, on the surface in the core portion of the semiconductive particles fluorophor constructed with core or with core shell The organic compound combined respectively with core portion or shell portion is set on the surface in the shell portion of the semiconductive particles fluorophor of construction.
In addition, being not limited to above-mentioned core construction or core shell construction, the semiconductive particles with more shell structures can also be used glimmering Body of light.As such more shell structures, such as the semiconductive particles fluorophor being constructed as below can also be used, with core shell The outside in the shell portion of the semiconductive particles fluorophor of construction sets core shell/shell structure that the shell portion being made of another material forms It makes；Shell portion is configured in central portion and core portion is set in a manner of covering the shell portion, and further to cover the side in the outside in core portion The shell that formula setting shell portion forms/core shell construction etc..
According to the semiconductive particles fluorophor with above-mentioned composition, emission wavelength can be arbitrarily adjusted.This is because：Energy It is enough using the grain size of semiconductor microcrystallite particle (diameter) to be reduced to the amount that is generated in the case of less than twice of Bohr radius Sub- restriction effect.Due to quantum confinement effect corresponding with grain size, the band-gap energy in the core portion of semiconductive particles fluorophor can be sent out Changing.Therefore, change band-gap energy by adjusting grain size, can arbitrarily adjust emission wavelength.In addition, if half Using mixed crystal material in the core portion of conductor particles fluorophor, by adjusting the mixed crystal ratio of mixed crystal material, also can arbitrarily adjust Emission wavelength.
As the emission wavelength of semiconductive particles fluorophor, can the semiconductor of any emission wavelength be used according to its purposes Microparticle fluorescence body, but in the present embodiment, preferably comprise the semiconductive particles fluorophor of the wavelength of visible light region.As half An example of the emission wavelength of conductor particles fluorophor, can include in the case of the fluorophor of blue-light-emitting as 420~ 480nm is 500~565nm in the case of the fluorophor of green emitting, in the case of Yellow luminous fluorophor for 565~ 585nm is the wavelength region of 595~720nm in the case of the fluorophor of emitting red light.
The material in the core portion as semiconductive particles fluorophor, such as IV races semiconductor, IV-IV races semiconductor can be used Material, III-V compound semiconductor material, II-VI group compound semiconductor materials, I-VIII compound semiconductor materials Material, group IV-VI compound semiconductor materials etc..In addition, the crystallization mixed be made of a kind of element monolithic semiconductor, by two kinds The Binary compound semiconductor of element composition or the alloy semiconductor being made of three kinds or more elements can be used.Herein, from From the viewpoint of raising luminous efficiency is such, it is preferable to use the semiconductive particles being made of direct transition type semiconductor material come structure Nucleation portion.
In addition, as the semiconductive particles for forming core portion, it is preferable to use the semiconductive particles for sending visible ray as described above. From the viewpoint of durability, the combination power it is preferable to use atom is strong and chemical stability is high Group III-V compound semiconductor Material.In addition, in order to which the adjustment of the peak wavelength of the luminescent spectrum of semiconductive particles fluorophor is made to become easy, it is preferable to use mixed crystal Semi-conducting material forms core portion.On the other hand, in order to which manufacture is further made to become easy, it is preferable to use be made of less than 4 kinds elements Semiconductive particles fluorophor form core portion.
As semi-conducting material core portion, being made of binary compound that can be used in semiconductive particles fluorophor, example InP, InN, InAs, GaAs, CdSe, CdTe, ZnSe, ZnTe, PbS, PbSe, PbTe, CuCl can such as be included.
In addition, the ternary mixed crystal semi-conducting material as the core portion that can be used in semiconductive particles fluorophor, such as can Include InGaP, AlInP, InGaN, AlInN, ZnCdSe, ZnCdTe, PbSSe, PbSTe, PbSeTe etc..
The material in the shell portion as semiconductive particles fluorophor, such as IV races semiconductor, IV-IV races semiconductor can be included Material, III-V compound semiconductor material, II-VI group compound semiconductor materials, I-VIII compound semiconductor materials Material, group IV-VI compound semiconductor materials etc..In addition, the material as shell portion, the list that the crystallization mixed is made of a kind of element Body semiconductor, the Binary compound semiconductor being made of two kinds of elements or the alloy semiconductor being made of three kinds or more elements It uses.As described above, from the viewpoint of the luminous efficiency for improving display device is such, as the material in shell portion, it is preferable to use Semi-conducting material with the high band-gap energy of the material than core portion.
As the semiconductive particles for forming shell portion, from the viewpoint of the function of protecting above-mentioned core portion, it is preferable to use atoms Combination power is strong and III-V compound semiconductor material that chemical stability is high.On the other hand, in order to further become manufacture Easily, it is preferable to use the semiconductive particles fluorophor being made of less than 4 kinds elements to form shell portion.
As semi-conducting material shell portion, being made of binary compound that can be used in semiconductive particles fluorophor, example AlP, GaP, AlN, GaN, AlAs, ZnO, ZnS, ZnSe, ZnTe, MgO, MgS, MgSe, MgTe, CuCl can such as be included.
In addition, the ternary mixed crystal semi-conducting material as the shell portion that can be used in semiconductive particles fluorophor, such as can Include AlGaN, GaInN, ZnOS, ZnOSe, ZnOTe, ZnSSe, ZnSTe, ZnSeTe etc..
In addition, the material of the organic compound combined as the surface with semiconductive particles fluorophor, preferably by function The organic compound that portion and joint part are formed, the function part are made of alkyl, the joint part and semiconductive particles fluorophor Core portion or shell portion combine.As concrete example, instantiate amine compounds, phosphine compound, phosphine oxide compound, mercaptan compound, Aliphatic acid etc..
The manufacturing method of semiconductive particles fluorophor as the luminescent layer 106 for possessing above-mentioned composition can use known Various synthetic methods.For example, gas phase synthesis method, liquid phase synthesizing method, solid-phase synthesis, vacuum synthesis method etc. can be used. In liquid phase synthesizing method, hot soap method (hot soap) method, reverse micelle method, solvent heat (solvothermal) method, hydro-thermal can be utilized (hydrothermal) synthetic methods such as method, coprecipitation.
By will be added to by the use of the semiconductive particles fluorophor that this manufacturing method is formed as photopermeability component It in the liquid resins such as silicones and is allowed to scattered, forms quantum dot suspension.Semiconductive particles fluorophor is dispersed in liquid resin In the quantum dot suspension that forms can use method known to print process etc., the desired locations being coated on the 1st electrode 104. By the liquid resin such as UV curings or heat cure for being included quantum dot suspension, as shown in (b) of Fig. 7, in the 1st electrode The luminescent layer 106 for including quantum dot is formed on 104.
Then, as shown in (c) of Fig. 7, the position adjacent with the side of luminescent layer 106 on the 1st electrode 104 forms face Color converting layer 105.Color conversion layer 105 is formed using the fluorescent material with color conversion function or phosphor material.As with In the material of color conversion layer 105, for example, known organic material class corresponding with converting colors or inorganic material can be used The fluorescent material of class.For the material of color conversion layer 105, selection can take out the material of the light of desired emission wavelength.This The color conversion layer 105 that sample is formed is formed as becoming Fig. 2 in the position for covering the inclined-plane 104b of the 1st electrode 104 by patterning With above-mentioned composition shown in Fig. 3.
Then, as shown in (d) of Fig. 7, the 2nd electrode 107 is formed on luminescent layer 106.As opaque speculum electricity Pole, the 2nd electrode 107 use the formation such as aluminium.2nd electrode 107 is being formed as covering the upper surface of luminescent layer 106 by patterning On position become Fig. 2 and above-mentioned composition shown in Fig. 3.At this moment, together with the formation of the 2nd electrode 107, it is being formed at the 1st absolutely Through electrode 107a is formed in the contact hole of edge layer 102.
Then, as shown in (e) of Fig. 7, transparent sealing film 108, transparent the 1st electricity of the covering of sealing film 108 are formed Pole 104, the 2nd electrode 107, the surface entire surface of 105 and the 2nd insulating layer 103 of color conversion layer.Sealing film 108 can use The materials such as silicon nitride use CVD (Chemical Vapor Deposition：Chemical vapor deposition) method shape known to method etc. Into.
Colour filter 111a~111c is formed on sealing film 108.Colour filter 111a~111c is (red (R), green with three primary colors (G), it is blue (B)) it is corresponding, and configure in position corresponding with the light-emitting zone of each pixel 10.In addition, except colour filter 111a~ Outside 111c, the substrate 112 for being configured with black matrix etc. can also be fitted on sealing film 108 via sealing material etc..
In such manner, it is possible to make by known method, the more previous manufacturing process of little amplitude variation and can be with simple constitution realization The display device 100 of the 1st embodiment of the present invention.In addition, as described above, in each pixel 10, by such manufacture work The display device 100 that sequence is fabricated can utilize the 1st electrode 104 inclined-plane 104b, make from luminescent layer 106 release light L1 to Top is reflected and is emitted, and not towards the direction of adjacent pixel 10.
As more than, the display device 100 of the 1st embodiment of the invention is by making the luminescent layer 106 of composition light-emitting component Mutually it is adjacent to configuration in the horizontal direction with 105 grade of color conversion layer without the weight on the longitudinal direction of the removing direction as light It is folded, it can prevent the loss for the light L1 being emitted from luminescent layer 106.Also, the inclined-plane 104b by making the 1st electrode 104 utilizes work For reflecting electrode, can prevent the light leak to adjacent pixel 10, and using the light L1 being emitted from luminescent layer 106 effectively utilize as The emergent light of each pixel 10.
Therefore, the display device 100 of the 1st embodiment according to the present invention is forming high-resolution display device In the case of, it can also prevent light from leaking to adjacent pixel and generate colour mixture, and improve the light extraction efficiency from each pixel 10.
(the 2nd embodiment)
Hereinafter, reference Fig. 8 to Figure 11 illustrates the composition of the display device 200 of the 2nd embodiment of the present invention.
Fig. 8 is the section view of the schematic configuration of the pixel 10 in the display device 200 for represent the 2nd embodiment of the present invention Figure.Fig. 9 is for illustrating the top view of the schematic configuration of the pixel 10 in display device 200 shown in Fig. 8.Figure 10 is to represent this The sectional view of the variation of pixel 10 in the display device 200 of 2nd embodiment of invention.Figure 11 is represent the present invention the The sectional view of the variation of pixel 10 in the display device 200 of 2 embodiments.
Herein, the pixel 10 of the 2nd embodiment of the present invention shown in Fig. 8 to Figure 11 and Fig. 2 to shown in Fig. 4 hair The difference of the composition of the pixel 10 of the 1st bright embodiment is, quantum dot is included in the substantially central portion configuration of pixel 10 106 and the 2nd electrode 107 of luminescent layer, and by the inclined-plane 104b of the 1st electrode 104 be configured to surround include quantum dot luminescent layer 106.Therefore, below, for illustrate referring to Figure 2 to Figure 4 the present invention the 1st embodiment pixel 10 composition it is identical It forms, description is omitted.
As shown in (a) and (b) of Fig. 9, the through electrode 107a configurations of the 2nd electrode 107 of the pixel 10 of the 2nd embodiment In the substantially central portion of pixel 10.It surrounds the position for being configured with through electrode 107a and configures luminescent layer 106, luminescent layer 106 Upper surface is covered by the 2nd electrode 107.In addition, (a) of Fig. 9 is illustrated in the case that pixel 10 is configured to square lattice shape An example that forms of plane, (b) of Fig. 9 illustrates an example that the plane in the case that 10 banding of pixel is configured is formed.
With reference to Fig. 8 and Fig. 9, removing is configured with the area of the substantially central portion of the pixel 10 of the 2nd electrode 107 and luminescent layer 106 Domain, the 1st electrode 104 is from the upper surface of the 1st insulating layer 102 until the upper surface overlying cover gab portion 103a of the 2nd insulating layer 103 And it configures.Luminescent layer 106 is configured between the 1st electrode 104 and the 2nd electrode 107, with the luminescent layer 106 on the 1st electrode 104 Side, which is adjacent to, is configured with color conversion layer 105.The color conversion layer 105 for being adjacent to configuration with luminescent layer 106 is configured to opening Covering is until on the inclined-plane 104b of the 1st electrode 104 in oral area 103a.In the present embodiment, since the 2nd electrode 107 is configured to The upper surface of luminescent layer 106 is only covered, the major part of the upper surface of color conversion layer 105 is not covered by the 2nd electrode 107.
When releasing light L1 from the luminescent layer 106 being configured between the 1st electrode 104 and the 2nd electrode 107, light L1 is in level It is emitted on direction, and is incident to the color conversion layer 105 with being adjacent to configuration around luminescent layer 106.It is incident to color conversion The light L1 of layer 105 is reflected by configuring the 1st electrode 104 under color conversion layer 105, and never covered by the 2nd electrode 107 and The upper surface of the color conversion layer 105 of exposing is emitted upward.At this point, using the inclined-plane 104b of the 1st electrode 104, can make Light reflection towards the outside of pixel 10 is towards the top of pixel 10 and outgoing.Thereby, it is possible to prevent light to adjacent other Pixel 10 is revealed.
Alternatively, it is also possible to configure colour filter 111 on sealing film 108.The light being emitted from color conversion layer 105 passes through colour filter Piece 111, and take out the light L4 for each color for forming each pixel 10.
Figure 10 is the composition for the variation (display device 200a) for representing the 2nd embodiment of the present invention shown in Fig. 8 Sectional view.It as shown in Figure 10, can also be in the position adjacent with the side of luminescent layer 106 on the 1st electrode 104, shown in Fig. 8 Color conversion layer 105 position configuration colour filter 111.The light L1 released from luminescent layer 106 is incident to phase in the horizontal direction Adjacent colour filter 111, and light is reflected by configuring the 1st electrode 104 under colour filter 111 and is emitted upward, so as to take out Form the light L4 of each color of each pixel 10.
In addition, Figure 11 is other variations (display device 200b) for representing the 2nd embodiment of the present invention shown in Fig. 8 Sectional view.As shown in figure 11, transparent sealing can also be configured on 1st electrode 104 adjacent with the side of luminescent layer 106 Film 108.That is, the position of color conversion layer 105 or colour filter shown in Fig. 10 111 shown in Fig. 8 is being configured with, by luminescent layer The space in the 103a of opening portion that 106 and the 1st electrode 104 surrounds is filled by sealing film 108.The light L1 released from luminescent layer 106 When being emitted in the horizontal direction, reflected upward by the 1st electrode 104.That is, due in the position opposed with the side of luminescent layer 106 The inclined-plane 104b for being configured with the 1st electrode 104 is put, using the inclined-plane 104b of the 1st electrode 104, the outside towards pixel 10 can be made Light reflection be towards the top of pixel and outgoing.The light for being reflected and being emitted upward by the 1st electrode 104 is incident to configuration and is sealing Gu the colour filter 111 in film 108.The light for being used as each color for forming each pixel 10 is removed by the light L4 of colour filter 111.
As more than, the display device 200 of the 2nd embodiment according to the present invention is aobvious with the 1st embodiment of the present invention Showing device 100 similarly, in each pixel 10, can utilize the inclined-plane 104b of the 1st electrode 104, make what is released from luminescent layer 106 Light L1 compared with the direction of substrate level after being emitted to top reflection and not towards the direction of adjacent pixel.Therefore, it is possible to have It imitates land productivity and is used for emergent lights of the light L1 of light emitting layer 106 as each pixel 10.
Therefore, the display device 200 of the 2nd embodiment according to the present invention, the display with the 1st embodiment of the present invention Device 100 similarly, in the case where forming high-resolution display device, can also prevent light from leaking to adjacent pixel and producing Raw colour mixture, and improve the light extraction efficiency from each pixel 10.
(the 3rd embodiment)
Hereinafter, reference Figure 12 to Figure 16 illustrates the composition of the display device 300 of the 3rd embodiment of the present invention.
Figure 12 is the section view of the schematic configuration of the pixel 10 in the display device 300 for represent the 3rd embodiment of the present invention Figure.Figure 13 is the sectional view of the variation of the pixel 10 in the display device 300 for represent the 3rd embodiment of the present invention.Figure 14 It is the sectional view of another example of the variation of the pixel 10 in the display device 300 for represent the 3rd embodiment of the present invention.Figure 15 be for the top view of the schematic configuration of the pixel 10 in the display device 300 shown in definition graph 14.Figure 16 is to represent to be used for The circuit diagram of an example of the pixel circuit of the display device 300 of the 3rd embodiment of the present invention.
The of the present invention shown in display device 300 and Fig. 8 to Figure 11 of the 3rd embodiment of the present invention shown in Figure 12 The difference of the composition of the display device 200 of 2 embodiments is that the 2nd electrode 107 is covered above the entire surface of multiple pixels 10 And it is configured to multiple pixels 10 and shares.Therefore, below, for the 2nd embodiment of the present invention with illustrating with reference to Fig. 8 to Figure 11 Pixel 10 the identical composition of composition, description is omitted.
As shown in figure 12, in the 3rd embodiment, in the same manner as the composition of the pixel 10 of the 2nd embodiment, the 1st electrode 104 from the upper surface of the 1st insulating layer 102 until the upper surface overlying cover gab portion 103a of the 2nd insulating layer 103 is configured.Separately Outside, on the 1st electrode 104, luminescent layer 106 is configured in the substantially central portion of pixel 10.In the 103a of opening portion, in the 1st electrode On 104, it is adjacent to the side of luminescent layer 106 and is configured with color conversion layer 105.
On the other hand, different from the composition of the pixel 10 of the 2nd embodiment in the 3rd embodiment, the 2nd electrode 107 is matched somebody with somebody It is set to above the whole surface for covering multiple pixels 10.2nd electrode 107 is formed in using transparent conductive film on luminescent layer 106, The transparent electrode shared as multiple pixels 10.
As shown in figure 12, on luminescent layer 106, color conversion layer 105, the 1st electrode 104 and the 2nd insulating layer 103, match somebody with somebody The sealing film 108 for the whole surface for covering these components is put.At this point, the 2nd electrode 107 can also be configured on sealing film 108. As a result, between 106 and the 2nd electrode 107 of luminescent layer, in the range of being shown in fig. 12 with dotted line X1, it is configured with as insulation The sealing film 108 of layer.
Even if between 106 and the 2nd electrode 107 of luminescent layer there are sealing film 108 in the case of, have quantum dot shine Layer 106 can also utilize the electric field being formed between the 1st electrode 104 and the 2nd electrode 107 to release light L1.Therefore, luminescent layer 106 are not limited to the composition for contacting directly and configuring with the 1st electrode 104 and the 2nd electrode 107, can also be as shown in figure 12, are set to There are the compositions of insulating layer between 106 and the 2nd electrode 107 of luminescent layer.As the sealing film 108 of present embodiment, in the 1st electricity In the case of configuring insulating layer between 104 or the 2nd electrode 107 of pole and luminescent layer 106, the thickness of insulating layer is preferably set to 10~ 100nm or so.But with the composition of above-mentioned 1st and the 2nd embodiment shown in Fig. 2 to Figure 11 it is equally possible that being luminous The composition that the 106 and the 1st electrode 104 of layer, the 2nd electrode 107 directly contact configure.
Can also be that the substrate 112 for including colour filter 111a~111c is configured on the 2nd electrode 107 shown in Figure 12. Here or, other interlayer films are configured between 112 and the 2nd electrode 107 of substrate including colour filter 111a~111c.
In addition, as shown in figure 12 or, on the substrate 112 including colour filter 111a~111c, with luminescent layer The position of 106 overlappings is configured with black matrix 113.By configuring black matrix 113 on the upper surface of luminescent layer 106, can prevent The quantum dot of luminescent layer 106 is excited by the outer light of the external incident from display device 300.
2nd electrode 107 of the 3rd embodiment according to the present invention can be grounded in the outside of display area 9.That is, due to 2nd electrode 107 is covered above the entire surfaces of multiple pixels 10 and configured, with the 2nd electrode 107 of the 1st and the 2nd embodiment not Together, the through electrode 107a without being configured to be grounded in each pixel 10 of display area 9.Therefore, according to the present embodiment, Due to without forming through electrode 107a and contact hole in each pixel 10, can also assist in the raising of yield rate, being manufactured into This reduction.
In addition, Figure 13 is the sectional view of the pixel 10 for the display device 300a for representing the 3rd embodiment of the present invention.Such as figure Shown in 13, as the present invention the 3rd embodiment pixel 10 composition variation, can also possess following composition, with It is placed between the end 104c and the 2nd electrode 107 of the 1st electrode 104 on the upper surface of the 2nd insulating layer 103 and configures the 3rd insulating layer 110.It or, is wrapped in the variation shown in Figure 13 by the 1st electrode 104, the 2nd electrode 107 and the 3rd insulating layer 110 In the space enclosed, it is adjacent to configuration color conversion layer 105 with luminescent layer 106.
As shown in figure 13, since the 3rd insulating layer 110 is configured to the 1st electrode 104 positioned at the peripheral part of each pixel 10 End 104c can utilize the 3rd insulating layer 110 to prevent light other 10 transverse leakages of pixel adjacent in horizontal direction.In addition, Using the 3rd insulating layer 110, while the short circuit of the 1st electrode 104 and the 2nd electrode 107 is prevented, it can also make it as holding The spacer of 1st electrode 104 and the distance between the 2nd electrode 107 functions.
Also, Figure 14 is the sectional view of the pixel 10 for the display device 300b for representing the 3rd embodiment of the present invention.Such as figure Shown in 14, the variation of the composition of the pixel 10 of the 3rd embodiment as the present invention, color conversion layer 105 can also possess It is following to form, it is completely covered by the 1st electrode 104 that pixel 10 configures and configures between the 1st electrode 104 and the 2nd electrode 107 , in space around luminescent layer 106 comprising quantum dot.In the present embodiment, the 1st electricity of the covering of color conversion layer 105 It configures until on the upper surface of the 2nd insulating layer 103 the end 104c of pole 104.Thereby, it is possible to anti-using color conversion layer 105 The only short circuit of the 1st electrode 104 and the 2nd electrode 107.In addition, the 2nd electrode 107 of multiple 10 common lands of pixel configuration be configured to by Pixel 10 is covered on the upper surface of color conversion layer 105, and with the region contacted on the upper surface of the 2nd insulating layer 103 107c。
Figure 15 be represent section shown in Figure 14 form in, the 2nd electrode 107 configure vertical view in uppermost composition Figure.In addition, the section composition shown in Figure 14 is corresponding with the section composition of the D-D' lines shown in Figure 15.
As shown in Figure 14 and Figure 15, in the composition of the variation of the 3rd embodiment of the invention, luminescent layer 106 configures The substantially central portion of each pixel 10 on the side and upper surface of luminescent layer 106, configures on the whole in the light-emitting zone of pixel 10 Color conversion layer 105, and covered by the 2nd transparent electrode 107 and formed above the entire surface of pixel 10.It is such due to possessing It forms, according to the present embodiment, the light-emitting area of wider pixel 10 can be obtained, can also improve luminous efficiency as a result, And improve field angle.
Figure 16 is the pixel for the display device 300 for representing the 3rd embodiment for the present invention shown in Figure 12 to Figure 15 The circuit diagram of the configuration example of circuit.In addition, for the composition identical with the above-mentioned pixel circuit that (a) of Fig. 4 is shown, it is omitted below Its explanation.
In the same manner as the composition of the pixel circuit shown in (a) of Fig. 4, in figure 16, by the composition figure including luminescent layer 106 It is shown as " QD ", the luminescent layer 106 includes quantum dot (QD) of the configuration between the 1st electrode 104 and the 2nd electrode 107.In this hair In the 3rd bright embodiment, since the 2nd electrode 107 is the shared public electrode of multiple pixels 10, can also possess " QD " the The composition of 2 electrodes 107 ground connection.Due to possessing such composition, in the circuit shown in Figure 16 is formed, the 1st electricity can be also utilized The luminescent layer 106 of the potential difference control " QD " of 104 and the 2nd electrode 107 of pole shines.
In addition, in the construction shown in Figure 12 to the sectional view of Figure 14 or, by the through electrode in contact hole The configuration of 104a be set to luminescent layer 106 underface rather than the 2nd insulating layer 103 existing for part.It is shown in FIG. 17 and sets The composition of pixel 10 in the case of so to construct.Figure 17 is the display device 300c for representing the 3rd embodiment of the present invention Pixel 10 sectional view.In this case, the space of layout can be made with more more than needed.
As more than, in the composition of the pixel 10 of the 3rd embodiment of the invention described above shown in Figure 12 to Figure 17, pass through After the light L1 that the luminescent layer 106 between the 1st electrode 104 and the 2nd electrode 107 is released is made to be incident to color conversion layer 105, Reflected upward using the inclined-plane 104b of 1st electrode 104 of the configuration under color conversion layer 105, can also prevent light L2 to The direction leakage of adjacent pixel 10.
Therefore, the 1st~3 embodiment according to the present invention, the display that includes the luminescent layer 106 with quantum dot dress It puts, can prevent from preventing the colour mixture of pixel 10 to the light leak of adjacent pixel 10, and by the light released from luminescent layer 106 effectively Utilize the emergent light as each pixel 10, as a result, can improve light extraction efficiency.In addition, little amplitude variation more manufacturing process is just It can be with the structure of this display device of simple constitution realization.

Claims (8)

1. a kind of display device, multiple pixels are configured in display area in a matrix form, the multiple pixel includes respectively：
1st substrate；
1st insulating layer is arranged on the 1st face of the 1st substrate；
2nd insulating layer has multiple opening portions that the part for making the 1st insulating layer is exposed；
1st electrode is arranged respectively in the multiple opening portion, configure in the opening portion from the 1st insulating layer There is inclined-plane in scope on to the 2nd insulating layer and on the side of the 2nd insulating layer；
Luminescent layer, it includes quanta point material, the luminescent layer configuration is on the 1st electrode in the opening portion and has The side of configuration is opposed to the inclined-plane of the 1st electrode；
2nd electrode, the 2nd electrode configuration is on the light-emitting layer；And
The side of color conversion layer, the color conversion layer and the quanta point material is adjacent to configuration on the 1st electrode,
The multiple pixel includes the 1st region and the 2nd region respectively,
In the 1st region under overlooking, the luminescent layer is Chong Die with the 1st electrode, the 2nd electrode and the luminescent layer Overlapping,
In the 2nd region under overlooking, the color conversion layer is Chong Die with the 1st electrode, the 2nd electrode and the face Color converting layer is not overlapped.
2. display device according to claim 1, wherein,
1st electrode has towards the inclined inclined-plane in outside of pixel.
3. display device according to claim 1, wherein,
1st electrode is the reflecting electrode for making the light reflection released from the luminescent layer.
4. display device according to claim 1, wherein,
Colour filter is further included, the colour filter configuration is in the top of the color conversion layer.
5. display device according to claim 1, wherein,
The luminescent layer is respectively correspondingly configured with multiple pixels,
2nd electrode is the reflecting electrode configured by the pixel.
6. a kind of display device, multiple pixels are configured in display area in a matrix form, the multiple pixel includes respectively：
1st substrate；
1st insulating layer is arranged on the 1st face of the 1st substrate；
2nd insulating layer has multiple opening portions that the part for making the 1st insulating layer is exposed；
1st electrode is arranged respectively in the multiple opening portion, configure in the opening portion from the 1st insulating layer There is inclined-plane in scope on to the 2nd insulating layer and on the side of the 2nd insulating layer；
Luminescent layer, it includes quanta point material, the luminescent layer is respectively correspondingly configured with multiple pixels in the opening portion The 1st electrode on and with the side that configuration is opposed to the inclined-plane of the 1st electrode；
2nd electrode, the 2nd electrode are the transparent electrodes of the multiple pixel common land configuration, and configuration is on the light-emitting layer； And
The side of color conversion layer, the color conversion layer and the quanta point material is adjacent to configuration on the 1st electrode,
The multiple pixel includes the 1st region and the 2nd region respectively,
In the 1st region under overlooking, the luminescent layer is Chong Die with the 1st electrode, the 2nd electrode and the luminescent layer Overlapping,
In the 2nd region under overlooking, the color conversion layer is Chong Die with the 1st electrode, the 2nd electrode and the face Color converting layer is overlapped.
7. display device according to claim 6, wherein,
The display device further includes the 3rd insulating layer, and the 3rd insulating layer covers the 1st electrode on the 2nd insulating layer End.
8. display device according to claim 7, wherein,
2nd electrode configuration is on the 3rd insulating layer.
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