CN105097638A - 一种新型腔内倒角陶瓷环 - Google Patents

一种新型腔内倒角陶瓷环 Download PDF

Info

Publication number
CN105097638A
CN105097638A CN201510527646.XA CN201510527646A CN105097638A CN 105097638 A CN105097638 A CN 105097638A CN 201510527646 A CN201510527646 A CN 201510527646A CN 105097638 A CN105097638 A CN 105097638A
Authority
CN
China
Prior art keywords
ceramic ring
wafer
edge
cavity
novel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510527646.XA
Other languages
English (en)
Inventor
柴智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Piotech Inc
Original Assignee
Piotech Shenyang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Piotech Shenyang Co Ltd filed Critical Piotech Shenyang Co Ltd
Priority to CN201510527646.XA priority Critical patent/CN105097638A/zh
Publication of CN105097638A publication Critical patent/CN105097638A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种新型腔内倒角陶瓷环，将陶瓷环承托晶圆的圆形凹槽的边缘加工成斜角，并在边缘利用圆弧过渡防止电荷堆积。所述陶瓷环放在热盘上，晶圆放在陶瓷环的圆形凹槽内。工艺时，工艺气体从晶圆上方喷下，并形成等离子体，反应物沉积在晶圆表面，其他副产物和带电粒子逐渐向四周移动，最终被排除腔体。这个过程中携有带电粒子的气体通过陶瓷环承托晶圆的凹槽边缘时，会在此处产生波动，此处为斜坡，气流经过时不会受到过大的阻碍，形成紊流，仍能保持层流状态，因此可改善膜层的均匀性，从而保证了工艺的稳定性。可广泛地应用于半导体薄膜沉积的技术领域。

Description

一种新型腔内倒角陶瓷环
技术领域
本发明涉及一种半导体镀膜设备用的新型腔内倒角陶瓷环，该倒角陶瓷环主要应用于半导体镀膜设备反应腔内常温或高温工艺过程中，属于半导体薄膜沉积的应用技术领域。
背景技术
现有的半导体镀膜设备的晶圆承载陶瓷环承托晶圆的圆形凹槽的边缘为直角，在高温工艺过程中，当等离子体气流通过凹槽边缘时，直角对气流的流动产生影响，从而影响膜层的均匀性，并易造成尖端放电，形成电弧放电现象，对工艺结果造成负面影响，并可能损伤腔内硬件。
发明内容
本发明以解决上述问题为目的，设计了一种新型腔内倒角陶瓷环，解决了工艺均匀性和尖端放电的问题。
为实现上述目的，本发明采用下述技术方案：一种新型腔内倒角陶瓷环，将陶瓷环承托晶圆的圆形凹槽的边缘加工成斜角，并在边缘利用圆弧过渡防止电荷堆积。具体结构：它包括晶圆、热盘及陶瓷环。
进一步陶瓷环上设有圆形凹槽；
进一步圆形凹槽边缘加工成斜坡；
进一步斜坡的角度由25度至40度。
本发明的陶瓷环放在热盘上，晶圆放在陶瓷环的圆形凹槽内。工艺时，工艺气体从晶圆上方喷下，并形成等离子体，反应物沉积在晶圆表面，其他副产物和带电粒子逐渐向四周移动，最终被排除腔体。这个过程中携有带电粒子的气体通过陶瓷环承托晶圆的凹槽边缘时，会在此处产生波动，此处为斜坡，气流经过时不会受到过大的阻碍，形成紊流，仍能保持层流状态，因此可改善膜层的均匀性。与此同时，带电粒子会吸附在陶瓷环表面，并产生堆积，由于陶瓷环的边缘是圆角结构，面与面通过圆弧过渡，工艺过程中，带电粒子不会在边缘形成过度堆积，而产生尖端放电现象，从而保证了工艺的稳定性。
本发明的有益效果及特点在于：
1、结构简单，易加工；
2、安全可靠，可改善膜层均匀性及尖端放电的问题。
3、可广泛地应用于半导体薄膜沉积的技术领域。
附图说明
图1是本发明的结构示意图。
图2是本发明的局部放大图。
图中零件标号分别代表:
1、晶圆；2、热盘；3、陶瓷环；4、斜坡。
具体实施方式
实施例
参照图1，一种新型腔内倒角陶瓷环，将陶瓷环承托晶圆的圆形凹槽的边缘加工成斜角，并在边缘利用圆弧过渡防止电荷堆积。具体结构：它包括晶圆1、热盘2及陶瓷环3。所述陶瓷环3上设有圆形凹槽；所述圆形凹槽边缘加工成斜坡4；所述斜坡4的角度由25度至40度。
本发明的陶瓷环3放在热盘2上，晶圆1放在陶瓷环3的圆形凹槽内，工艺时，工艺气体从晶圆1上方喷下，并形成等离子体，反应物沉积在晶圆1表面，其他副产物和带电粒子逐渐向四周移动，最终被排除腔体。这个过程中携有带电粒子的气体通过陶瓷环3承托晶圆的凹槽边缘时，会在此处产生波动，此处为斜坡4，气流经过时不会受到过大的阻碍，形成紊流，仍能保持层流状态，因此可改善膜层的均匀性。与此同时，带电粒子会吸附在陶瓷环3表面，并产生堆积，由于陶瓷环3的边缘是圆角结构，面与面通过圆弧过渡，工艺过程中，带电粒子不会在边缘形成过度堆积，而产生尖端放电现象，从而保证了工艺的稳定性。

Claims (4)

1.一种新型腔内倒角陶瓷环，其特征在于：将陶瓷环承托晶圆的圆形凹槽的边缘加工成斜角，并在边缘利用圆弧过渡防止电荷堆积。
2.如权利要求1所述的新型腔内倒角陶瓷环，其特征在于：它包括晶圆、热盘及陶瓷环，所述陶瓷环上设有圆形凹槽。
3.如权利要求2所述的新型腔内倒角陶瓷环，其特征在于：所述圆形凹槽边缘加工成斜坡。
4.如权利要求3所述的新型腔内倒角陶瓷环，其特征在于：所述斜坡的角度由25度至40度。
CN201510527646.XA 2015-08-24 2015-08-24 一种新型腔内倒角陶瓷环 Pending CN105097638A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510527646.XA CN105097638A (zh) 2015-08-24 2015-08-24 一种新型腔内倒角陶瓷环

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510527646.XA CN105097638A (zh) 2015-08-24 2015-08-24 一种新型腔内倒角陶瓷环

Publications (1)

Publication Number Publication Date
CN105097638A true CN105097638A (zh) 2015-11-25

Family

ID=54577770

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510527646.XA Pending CN105097638A (zh) 2015-08-24 2015-08-24 一种新型腔内倒角陶瓷环

Country Status (1)

Country Link
CN (1) CN105097638A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298625A (zh) * 2016-08-22 2017-01-04 沈阳拓荆科技有限公司 一种阶梯结构陶瓷环
WO2021003706A1 (zh) * 2019-07-10 2021-01-14 苏州晶湛半导体有限公司 晶片承载盘与晶片外延装置
WO2021003705A1 (zh) * 2019-07-10 2021-01-14 苏州晶湛半导体有限公司 晶片承载盘与晶片外延设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101024213A (zh) * 2006-02-21 2007-08-29 陈国栋 晶片承载盘保护层的制造方法
US20100044974A1 (en) * 2008-08-19 2010-02-25 Lam Research Corporation Edge rings for electrostatic chucks
CN202786423U (zh) * 2012-09-03 2013-03-13 沈阳拓荆科技有限公司 一种新型铝制晶圆加热盘
CN203174197U (zh) * 2013-04-01 2013-09-04 中芯国际集成电路制造(北京)有限公司 一种反应腔组件
CN203562415U (zh) * 2013-11-01 2014-04-23 沈阳拓荆科技有限公司 一种新型晶圆承载装置
CN103996643A (zh) * 2014-05-30 2014-08-20 沈阳拓荆科技有限公司 立柱式陶瓷环定位用销
CN103996648A (zh) * 2014-05-30 2014-08-20 沈阳拓荆科技有限公司 螺接式陶瓷环定位用销
CN104833288A (zh) * 2015-04-17 2015-08-12 沈阳拓荆科技有限公司 加热盘组件定位结构位置检验工装及操作方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101024213A (zh) * 2006-02-21 2007-08-29 陈国栋 晶片承载盘保护层的制造方法
US20100044974A1 (en) * 2008-08-19 2010-02-25 Lam Research Corporation Edge rings for electrostatic chucks
CN202786423U (zh) * 2012-09-03 2013-03-13 沈阳拓荆科技有限公司 一种新型铝制晶圆加热盘
CN203174197U (zh) * 2013-04-01 2013-09-04 中芯国际集成电路制造(北京)有限公司 一种反应腔组件
CN203562415U (zh) * 2013-11-01 2014-04-23 沈阳拓荆科技有限公司 一种新型晶圆承载装置
CN103996643A (zh) * 2014-05-30 2014-08-20 沈阳拓荆科技有限公司 立柱式陶瓷环定位用销
CN103996648A (zh) * 2014-05-30 2014-08-20 沈阳拓荆科技有限公司 螺接式陶瓷环定位用销
CN104833288A (zh) * 2015-04-17 2015-08-12 沈阳拓荆科技有限公司 加热盘组件定位结构位置检验工装及操作方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298625A (zh) * 2016-08-22 2017-01-04 沈阳拓荆科技有限公司 一种阶梯结构陶瓷环
CN106298625B (zh) * 2016-08-22 2019-06-28 沈阳拓荆科技有限公司 一种阶梯结构陶瓷环
WO2021003706A1 (zh) * 2019-07-10 2021-01-14 苏州晶湛半导体有限公司 晶片承载盘与晶片外延装置
WO2021003705A1 (zh) * 2019-07-10 2021-01-14 苏州晶湛半导体有限公司 晶片承载盘与晶片外延设备

Similar Documents

Publication Publication Date Title
US20200325073A1 (en) Slurry plasma spray of plasma resistant ceramic coating
US10934216B2 (en) Rare-earth oxide based chamber material
US20150311043A1 (en) Chamber component with fluorinated thin film coating
TW202206275A (zh) 稀土氧化物系抗電漿腐蝕薄膜塗層
KR20160058749A (ko) 플라즈마 플레임 열 처리를 사용하는 플라즈마 스프레이 코팅 강화
KR20150068312A (ko) 플라즈마 처리 장치 및 포커스 링
CN105097638A (zh) 一种新型腔内倒角陶瓷环
WO2017099919A1 (en) Amalgamated cover ring
JP2013069848A5 (zh)
CN201681788U (zh) 反应腔部件及应用该反应腔部件的等离子体处理装置
CN105132890A (zh) 一种新型腔内陶瓷环
CN205388967U (zh) 一种防止半导体镀膜设备反应腔室内打火的装置
Nakagomi et al. A method to adjust polycrystalline silicon carbide etching rate profile by chlorine trifluoride gas
RU2524142C1 (ru) СПОСОБ ЗАЩИТЫ p-n-ПЕРЕХОДОВ НА ОСНОВЕ ОКИСИ БЕРИЛЛИЯ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20151125

RJ01 Rejection of invention patent application after publication