CN105097040B - Memory and its programmed circuit - Google Patents
Memory and its programmed circuit Download PDFInfo
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- CN105097040B CN105097040B CN201410184849.9A CN201410184849A CN105097040B CN 105097040 B CN105097040 B CN 105097040B CN 201410184849 A CN201410184849 A CN 201410184849A CN 105097040 B CN105097040 B CN 105097040B
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Abstract
A kind of memory and its programmed circuit, the memory includes electric fuse storage unit, the programmed circuit of the memory includes: programmable PMOS tube group, including N number of programmable PMOS tube, the source electrode of N number of programmable PMOS tube is connected and is suitable for inputting program voltage, the drain electrode of N number of programmable PMOS tube couples the program voltage input terminal of the electric fuse storage unit, the grid of N number of programmable PMOS tube is corresponding to receive N position digital signal, bits per inch word signal one programmable PMOS tube on or off of corresponding control, N are integer and N >=2；Digital signal generating unit is suitable for generating the N position digital signal.Memory and its programmed circuit provided by the invention can guarantee that electric fuse storage unit is effectively written data when the actual value of program voltage is greater than design value.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of memory and its programmed circuit.
Background technique
Electric fuse (E-fuse) technology is a kind of technology to be grown up according to polysilicon fuse characteristic.Electric fuse it is initial
Resistance value very little, when there is high current by electric fuse, electric fuse is blown, resistance value multiplication.The electric fuse being blown will
The electric fuse for for good and all remaining off, and not being blown is then still on state.Therefore, the storage being made of electric fuse
Unit is to judge whether electric fuse is blown the data to learn its internal reservoir.
Fig. 1 is a kind of electrical block diagram of existing electric fuse storage unit.With reference to Fig. 1, the electric fuse storage
Unit includes program voltage input terminal N10, fuse element F10 and gating transistor M10.The program voltage input terminal N10 connects
It connects one end of the fuse element F10 and is suitable for input program voltage Vp；The other end of the fuse element F10 connects the choosing
The drain electrode of logical transistor M10；The grid of the gating transistor M10 is suitable for input gating signal SEL1, the gating transistor
The source electrode of M10 is grounded.When operating to the electric fuse storage unit, the gating signal SEL1 controls the gating crystal
Pipe M10 conducting.
Before to electric fuse storage unit programming, the fuse element F10 is not blown, resistance value very little.When
The program voltage Vp is applied to the program voltage input terminal N10, high level is applied to the grid of the gating transistor M10
Gating signal SEL1 when, gating transistor M10 conducting has program current to flow through the fuse element F10, the fuse
Element F10 is blown, and resistance value increases, and realizes the programming to the storage unit.If the program current is too small, can not incite somebody to action
The fuse element F10 fusing；If the program current is too big, it is easy to damage the fuse element F10.Therefore, the volume
The current value of journey electric current needs to control within limits, i.e., the voltage value of the described program voltage Vp needs to control in certain model
Within enclosing, it is just able to achieve effective programming to the electric fuse storage unit.
In the design phase of memory, usually by being programmed experiment to several electric fuse storage units to obtain
The design value of the program voltage Vp.However, in practical applications, due to many factors such as cost limitations, the programming electricity
Its design value would generally be higher than by pressing the actual value of Vp, cause part electric fuse storage unit that cannot be effectively written data.
Summary of the invention
The problem of being higher than its design value the invention solves the actual value of the program voltage of electric fuse storage unit.
To solve the above problems, the present invention provides a kind of programmed circuit of memory, the memory includes that electric fuse is deposited
The programmed circuit of storage unit, the memory includes:
Programmable PMOS tube group, including N number of programmable PMOS tube, the source electrode of N number of programmable PMOS tube are connected and fit
In input program voltage, the drain electrode of N number of programmable PMOS tube couples the program voltage input of the electric fuse storage unit
End, the grid of N number of programmable PMOS tube is corresponding to receive N position digital signal, and the corresponding control one of bits per inch word signal can compile
Journey PMOS tube on or off, N are integer and N >=2；
Digital signal generating unit is suitable for generating the N position digital signal.
Optionally, the digital signal generating unit includes:
Reference memory cell, structure are identical as the structure of the electric fuse storage unit；
The source electrode of benchmark PMOS tube group, including N number of benchmark PMOS tube, N number of benchmark PMOS tube is connected and is suitable for inputting
The program voltage, the drain electrode of N number of benchmark PMOS tube couples the program voltage input terminal of the reference memory cell, described
The grid of N number of benchmark PMOS tube is corresponding to receive the N position digital signal, and the size of the benchmark PMOS tube may be programmed with described
The size of PMOS tube is identical；
Voltage comparator is adapted to compare the voltage of the program voltage input terminal of reference voltage and the reference memory cell,
The first comparison signal is generated when the voltage of the program voltage input terminal of the reference memory cell is higher than the reference voltage, it is no
Then generate the second comparison signal；
N-bit counter generates the N position digital signal suitable for being counted to clock pulses, is receiving described
Counting forward is carried out to the clock pulses when one comparison signal, when receiving second comparison signal to the clock arteries and veins
Rush in row counting in reverse.
Optionally, the N-bit counter is forward-backward counter.
Optionally, the digital signal generating unit further include: the clock pulses suitable for generating the clock pulses generates
Unit.
Optionally, the clock generating element is ring oscillator.
Optionally, the digital signal generating unit includes:
Detection unit, it is corresponding with the voltage value of the program voltage to generate to be adapted to detect for the voltage value of the program voltage
Control signal；
Storage unit, suitable for storing N position digital signal corresponding with the voltage value of the program voltage, and receiving
N position digital signal corresponding with the voltage value of the program voltage is generated when stating control signal.
Optionally, the storage unit is N-bit register.
Optionally, the programmed circuit of the memory further include: N number of impedor；The drain electrode of each programmable PMOS tube
The program voltage input terminal of the electric fuse storage unit is coupled by an impedor.
Optionally, the electric fuse storage unit further includes fuse element and gating transistor；
One end of the fuse element connects the program voltage input terminal of the electric fuse storage unit, the fuse element
The other end connect the drain electrode of the gating transistor；
The grid of the gating transistor is suitable for input gating signal, the source electrode ground connection of the gating transistor.
Based on the programmed circuit of above-mentioned memory, the present invention also provides a kind of memories, including electric fuse storage unit, also
Programmed circuit including above-mentioned memory.
Compared with prior art, technical solution of the present invention has the advantage that
The programmed circuit of memory provided by the invention includes that may be programmed PMOS tube group and digital signal generating unit, described
Programmable PMOS tube group can divide program voltage due to equivalent impedance.Pass through the digital signal generating unit
The digital signal of offer can adjust the programmable PMOS tube quantity that saturation conduction state is in the programmable PMOS tube group,
So as to adjust the pressure drop of the programmable PMOS tube group, it is equal to the voltage value of the program voltage input terminal of electric fuse storage unit
The design value of the program voltage guarantees that the electric fuse storage unit is effectively written data.
Further, the programmable PMOS tube in the programmable PMOS tube group is in saturation conduction by Digital Signals
State or off state have very strong anti-interference ability.Also, it is described when not needing to be programmed the memory
All programmable PMOS tube in programmable PMOS tube group is in off state, therefore, the programmed circuit of the memory
Quiescent dissipation very little.
In optinal plan of the invention, the digital signal generating unit includes the benchmark storage for constituting testing calibration loop
Unit, benchmark PMOS tube group, voltage comparator and N-bit counter.The benchmark is stored by the benchmark PMOS tube group
Unit is programmed, and by the voltage comparator to the voltage and ginseng of the program voltage input terminal of the reference memory cell
It examines voltage to be compared, the N-bit counter is controlled according to comparison result and generates corresponding digital signal.Due to the number letter
Number unit is generated using loop alignment, the digital signal generated can follow the program voltage to change in real time, mention
The high voltage accuracy of the program voltage input terminal of the electric fuse storage unit.
In optinal plan of the invention, the digital signal generating unit includes detection unit and storage unit, described to deposit
Storage unit has prestored digital signal corresponding with the voltage value of the program voltage.When to electric fuse storage unit programming,
It is detected by voltage value of the detection unit to the program voltage, the storage unit can be generated directly and the volume
The corresponding digital signal of the voltage value of journey voltage, because improving program speed without carrying out real time calibration.
In optinal plan of the invention, the programmed circuit of the memory further includes multiple impedors, described programmable
The drain electrode that each may be programmed PMOS tube in PMOS tube group couples the programming of the electric fuse storage unit by an impedor
Voltage input end.By increasing the impedor, the equivalent impedance of the programmable PMOS tube group has broader adjusting model
It encloses, further improves the voltage accuracy of the program voltage input terminal of the electric fuse storage unit.
Detailed description of the invention
Fig. 1 is a kind of electrical block diagram of existing electric fuse storage unit；
Fig. 2 is a kind of structural schematic diagram of the programmed circuit of memory provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of digital signal generating unit provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another digital signal generating unit provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of the programmed circuit of another memory provided in an embodiment of the present invention.
Specific embodiment
Just as described in the background art, it is limited by factors such as costs, the reality of the program voltage of electric fuse storage unit
Actual value is often higher than its design value.When being programmed to memory, part electric fuse storage unit cannot be effectively written number
According to.The present invention provides a kind of programmed circuit of memory, divides, makes to program voltage by using programmable PMOS tube group
The voltage of input electric fuse storage unit meets design requirement.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 2 is a kind of structural schematic diagram of the programmed circuit of memory provided in an embodiment of the present invention.The memory packet
Include electric fuse storage unit 20, the electric fuse storage unit 20 include program voltage input terminal N20, fuse element F20 and
Gating transistor M20.Wherein, one end of the fuse element F20 connect the electric fuse storage unit 20 program voltage it is defeated
Enter and hold N20, the other end of the fuse element F20 connects the drain electrode of the gating transistor M20；The gating transistor M20
Grid be suitable for input gating signal SEL2, the gating transistor M20 source electrode ground connection.The gating transistor M20 is
NMOS tube, when therefore, it is necessary to carry out read operation, write operation or programming operation to the electric fuse storage unit 20, the choosing
Messenger SEL2 is high level, controls the gating transistor M20 conducting；It does not need to carry out the electric fuse storage unit 20
When read operation, write operation or programming operation, the gating signal SEL2 is low level, controls the gating transistor M20 and cuts
Only.
It should be noted that the specific structure of the electric fuse storage unit 20 is not limited to the description of the present embodiment, this
The programmed circuit for the memory that inventive embodiments provide is also applied for the electric fuse storage unit with other structures, the present invention couple
This is with no restriction.The storage unit 20 be suitable for storage one bit binary data, in the memory, generally include it is multiple with
The program voltage input terminal of the identical storage unit of 20 structure of storage unit, the identical storage unit of multiple structures is connected,
The embodiment of the present invention is only illustrated with a storage unit.
The programmed circuit of the memory includes programmable PMOS tube group 21 and digital signal generating unit.
The programmable PMOS tube group 21 includes N number of programmable PMOS tube: programmable PMOS tube P21, programmable PMOS tube
P22, programmable PMOS tube P2N, N is integer and N >=2.The source electrode of N number of programmable PMOS tube is connected and is suitable for
Input program voltage Vp；The program voltage that the drain electrode of N number of programmable PMOS tube couples the electric fuse storage unit 20 is defeated
Enter and holds N20, in the present embodiment, volume of the drain electrode of N number of programmable PMOS tube directly with the electric fuse storage unit 20
Journey voltage input end N20 is connected；The corresponding N position digital signal that receives of the grid of N number of programmable PMOS tube: digital signal D1,
Digital signal D2, digital signal DN, the grid of each programmable PMOS tube is corresponding to receive one-bit digital signal, every
Digital signal one programmable PMOS tube saturation conduction of corresponding control or cut-off.
Specifically, the grid of the programmable PMOS tube P21 receives the digital signal D1, and the digital signal D1 is low
The programmable PMOS tube P21 saturation conduction is controlled when level, the digital signal D1 controls described programmable when being high level
PMOS tube P21 cut-off；The grid of the programmable PMOS tube P22 receives the digital signal D2, and the digital signal D2 is low
The programmable PMOS tube P22 saturation conduction is controlled when level, the digital signal D2 controls described programmable when being high level
PMOS tube P22 cut-off；···；The grid of the programmable PMOS tube P2N receives the digital signal DN, the digital signal
DN controls the programmable PMOS tube P2N saturation conduction when being low level, when the digital signal DN is high level described in control
Programmable PMOS tube P2N cut-off.What the high level amplitude and low level amplitude of bits per inch word signal can be controlled according to its correspondence can
The threshold voltage of programming PMOS tube is configured, as known to those skilled in the art how according to the threshold value of the programmable PMOS tube
The amplitude of the digital signal is arranged in voltage, and details are not described herein.
It should be noted that may be sized to for N number of programmable PMOS tube is identical, may be set to be not
Together.The value of N can be set according to actual needs, and the value of N is bigger, the equivalent impedance of the programmable PMOS tube group 21
Impedance value is more, and therefore, the voltage accuracy of the program voltage input terminal N20 of the electric fuse storage unit 20 is higher.
The digital signal generating unit 22 is suitable for generating the N position digital signal.Institute can be changed in the N position digital signal
The quantity of the programmable PMOS tube in programmable PMOS tube group 21 in saturation conduction state is stated, so as to adjust described programmable
The equivalent impedance of PMOS tube group 21 changes the pressure drop of the programmable PMOS tube group 21, makes the electric fuse storage unit 20
The voltage of program voltage input terminal N20 meets design requirement.
Specifically, when being programmed to the electric fuse storage unit 20, apply the program voltage Vp to it is described it is N number of can
Program the grid of the connected source electrode of PMOS tube, the gating signal SEL2 to the gating transistor M20 for applying high level, it is described can
It programs PMOS tube group 21, the fuse element F20 and the gating transistor M20 and constitutes cascaded structure, jointly to the volume
Journey voltage Vp is divided.
It is N described when the voltage value of the program voltage input terminal N20 of the electric fuse storage unit 20 is greater than design value
Low level signal quantity is reduced in digital signal, high level signal quantity increases, and is reduced in the programmable PMOS tube group 21
Increase in the equivalent impedance of the quantity of the programmable PMOS tube of saturation conduction state, the programmable PMOS tube group 21, makes described
The pressure drop of programmable PMOS tube group 21 increases, and the voltage of the program voltage input terminal N20 of the electric fuse storage unit 20 reduces；
When the voltage value of the program voltage input terminal N20 of the electric fuse storage unit 20 is not more than design value, the N
Low level signal quantity increases in position digital signal, high level signal quantity is reduced, and increases in the programmable PMOS tube group 21
The equivalent impedance of the quantity of programmable PMOS tube in saturation conduction state, the programmable PMOS tube group 21 reduces, and makes institute
The pressure drop for stating programmable PMOS tube group 21 reduces, and the voltage of the program voltage input terminal N20 of the electric fuse storage unit 20 increases
Greatly.
The programmed circuit of memory provided in an embodiment of the present invention provides voltage value by the programmable PMOS tube group 21
Variable pressure drop divides the program voltage Vp, so as to adjust the programming electricity of the electric fuse storage unit 20
The voltage for pressing input terminal N20, makes the voltage of the program voltage input terminal N20 of the electric fuse storage unit 20 can satisfy design
Demand.Further, the programmable PMOS tube group 21 uses Digital Signals, and the programmable PMOS tube is in saturation conduction
State or off state improve the anti-interference ability of the programmed circuit of the memory, and it is small to reduce quiescent dissipation.
Fig. 3 is a kind of particular circuit configurations of digital signal generating unit 22 provided in an embodiment of the present invention, described
Digital signal generating unit 22 includes reference memory cell 30, benchmark PMOS tube group 31, voltage comparator 32 and N-bit counter
33。
The structure of the reference memory cell 30 is identical as the structure of the electric fuse storage unit 20.Specifically, described
Reference memory cell 30 includes program voltage input terminal N30, fuse element F30 and gating transistor M30, the gating crystal
The grid of pipe M30 is suitable for input gating signal SEL3.The program voltage input terminal N30, the fuse element F30 and described
The specific connection relationship of gating transistor M30 can refer to the description to the electric fuse storage unit 20, and details are not described herein.
The structure of the benchmark PMOS tube group 31 is identical as the structure of the programmable PMOS tube group 21.Specifically, described
Benchmark PMOS tube group 31 include N number of benchmark PMOS tube: benchmark PMOS tube P31, benchmark PMOS tube P32, benchmark PMOS tube
P3N.The source electrode of N number of benchmark PMOS tube is connected and is suitable for inputting the program voltage Vp；The leakage of N number of benchmark PMOS tube
Pole couples the program voltage input terminal N30 of the reference memory cell 30, in the present embodiment, N number of benchmark PMOS tube
Drain electrode is directly connected with the program voltage input terminal N30 of the reference memory cell 30；The grid pair of N number of benchmark PMOS tube
The N position digital signal should be received, the grid of each benchmark PMOS tube is corresponding to receive one-bit digital signal, bits per inch word signal pair
A benchmark PMOS tube saturation conduction or cut-off should be controlled.
Specifically, the grid of the benchmark PMOS tube P31 receives the digital signal D1, the benchmark PMOS tube P32's
Grid receives the digital signal D2, the grid of the benchmark PMOS tube P3N receives the digital signal DN.It is described
The size of benchmark PMOS tube is identical as the size of the programmable PMOS tube, further, if the ruler of N number of programmable PMOS tube
Very little all the same, then the size of N number of benchmark PMOS tube is also identical, and identical as the size of the programmable PMOS tube；If institute
The size for stating N number of programmable PMOS tube is identical, then receives the benchmark PMOS tube and programmable PMOS tube of equalized digital signal
Size is identical, it may be assumed that the size of the benchmark PMOS tube P31 is identical with the size of the programmable PMOS tube P21, the benchmark
The size of PMOS tube P32 is identical with the size of the programmable PMOS tube P22, the size of the benchmark PMOS tube P3N
It is identical with the size of the programmable PMOS tube P2N.
The first input end of the voltage comparator 32 is suitable for input reference voltage Vref, the electricity of the reference voltage Vref
Pressure value is equal to the design value of the program voltage Vp, and it is single that the second input terminal of the voltage comparator 32 connects the benchmark storage
The program voltage input terminal N30 of member 30.The voltage comparator 32 is adapted to compare the reference voltage Vref and the benchmark is deposited
The voltage of the program voltage input terminal N30 of storage unit 30, in the electricity of the program voltage input terminal N30 of the reference memory cell 30
Pressure generates the first comparison signal when being higher than the reference voltage Vref, otherwise generates the second comparison signal.
If the first input end of the voltage comparator 32 is anode, the voltage comparator of the voltage comparator 32
32 the second input terminal is the negative terminal of the voltage comparator 32, then first comparison signal is low level signal, described the
Two comparison signals are high level signal；If the first input end of the voltage comparator 32 is the negative of the voltage comparator 32
It holds, the anode that the second input terminal of the voltage comparator 32 is the voltage comparator 32, then first comparison signal is
High level signal, second comparison signal are low level signal.
The N-bit counter 33 is suitable for receiving the comparison signal that the voltage comparator 32 exports, and relatively believes described
Number control under clock pulses CLK is counted to generate the N position digital signal.The N-bit counter 33 is reversible meter
Number device, specifically, the N-bit counter 33 carries out just the clock pulses CLK when receiving first comparison signal
To counting, the N-bit counter 33 reversely counts the clock pulses CLK when receiving second comparison signal
Number.It should be noted that the clock pulses CLK can be provided by independent pulse signal generator of clock.In the present embodiment
In, the digital signal generating unit 22 further includes the clock generating element 34 suitable for generating the clock pulses CLK, institute
Stating clock generating element 34 can be RC oscillating circuit, ring oscillator isochronon signal generating circuit.
When being programmed to the electric fuse storage unit 21, apply the program voltage Vp to described N number of programmable
The source electrode that the connected source electrode of PMOS tube is connected with N number of benchmark PMOS tube applies the gating signal SEL2 of high level to described
The grid of gating transistor M20 applies the grid of the gating signal SEL3 to the gating transistor M30 of high level.By institute
The structure for stating benchmark PMOS tube group 31 is identical with the structure of the programmable PMOS tube group 21, the knot of the reference memory cell 30
Structure is identical with the structure of the electric fuse storage unit 20, and the benchmark PMOS tube group 31 and the programmable PMOS tube group 21
It is controlled by the N position digital signal, therefore, the electricity of the voltage N30 of the program voltage input terminal of the reference memory cell 30
It presses equal with the voltage of voltage N20 of program voltage input terminal of the electric fuse storage unit 20.
When the voltage of the program voltage input terminal N30 of the reference memory cell 30 is higher than the reference voltage Vref,
Indicate that the voltage value of the program voltage input terminal N20 of the electric fuse storage unit 20 is greater than the design of the program voltage Vp
Value, the voltage comparator 32 generate first comparison signal, control of the N-bit counter 33 in first comparison signal
Counting forward is carried out to the clock pulses CLK under system, the reduction of low level signal quantity, high level in the N position digital signal
Number of signals increases, and reduces the quantity of the programmable PMOS tube in the programmable PMOS tube group 21 in saturation conduction state,
The equivalent impedance of the programmable PMOS tube group 21 increases, and increases the pressure drop of the programmable PMOS tube group 21, the electric smelting
The voltage of the program voltage input terminal N20 of silk storage unit 20 reduces；
When the voltage of the program voltage input terminal N30 of the reference memory cell 30 is not more than the reference voltage Vref
When, indicate the voltage value of the program voltage input terminal N20 of the electric fuse storage unit 20 no more than the program voltage Vp's
Design value, the voltage comparator 32 generate second comparison signal, and the N-bit counter 33 is in second comparison signal
Control under counting in reverse is carried out to the clock pulses CLK, high level signal quantity reduces, is low in the N position digital signal
Level signal quantity increases, and increases the number of the programmable PMOS tube in the programmable PMOS tube group 21 in saturation conduction state
The equivalent impedance of amount, the programmable PMOS tube group 21 reduces, and reduces the pressure drop of the programmable PMOS tube group 21, the electricity
The voltage of the program voltage input terminal N20 of fuse storage unit 20 increases.
The digital signal generating unit 22 provided in this embodiment is using loop alignment, the digital signal generated
The program voltage Vp can be followed to change in real time, improve the program voltage input terminal of the electric fuse storage unit 20
The voltage accuracy of N20.
Fig. 4 is the particular circuit configurations of the another kind provided in an embodiment of the present invention digital signal generating unit 22, institute
Stating digital signal generating unit 22 includes detection unit 41 and storage unit 42.The detection unit 41 is adapted to detect for the programming
To generate control signal corresponding with the voltage value of the program voltage Vp, the storage unit 42 is suitable for the voltage value of voltage Vp
N position digital signal corresponding with the voltage value of the program voltage is stored, and generation and institute when receiving the control signal
The corresponding N position digital signal of voltage value of program voltage is stated, the storage unit 42 can be N-bit register.
Specifically, the voltage value and the N position digital signal of the program voltage Vp can be obtained by many experiments
One-to-one relationship.By taking 4-digit number signal as an example, know by many experiments: when the voltage value of the program voltage Vp is p1
When, the digital signal generating unit 22 needs to provide 0001 4-digit number signal；When the voltage value of the program voltage Vp
When for p2, the digital signal generating unit 22 needs to provide 0011 4-digit number signal；When the electricity of the program voltage Vp
When pressure value is p3, the digital signal generating unit 22 needs to provide 0111 4-digit number signal；As the program voltage Vp
Voltage value be p4 when, the digital signal generating unit 22 needs to provide 1111 4-digit number signal.Therefore, voltage value is
P1 corresponding digital signals 0001, voltage value are p2 corresponding digital signals 0011, and voltage value is p3 corresponding digital signals 0111, voltage
Value is p4 corresponding digital signals 1111, and the storage unit 42 stores 0001,0011,0111,1,111 4 group of digital signal.
When the voltage value that the detection unit 41 detects the program voltage Vp is p1, control signal c1 is generated, it is described
It controls signal c1 and controls 42 output digit signals 0001 of storage unit；When the detection unit 42 detects the program voltage
When the voltage value of Vp is p2, control signal c2 is generated, the control signal c2 controls 42 output digit signals of storage unit
0011；When the voltage value that the detection unit 41 detects the program voltage Vp is p3, control signal c3, the control are generated
Signal c3 controls 42 output digit signals 0111 of storage unit；When the detection unit 41 detects the program voltage Vp's
When voltage value is p4, control signal c4 is generated, the control signal c4 controls 42 output digit signals 1111 of storage unit.
The detection unit 41 can realize how to detect a voltage as known to those skilled in the art using multiple voltage comparators
Voltage value, therefore the embodiment of the present invention is no longer described in detail the circuit structure of the detection unit 41.
The digital signal generating unit 22 provided in this embodiment when programming to the electric fuse storage unit 20, leads to
The voltage value that the detection unit 41 detects the program voltage Vp is crossed, the voltage with the program voltage Vp can be directly generated
It is worth corresponding digital signal, because improving program speed without carrying out real time calibration.
The embodiment of the present invention provides the programmed circuit of another memory shown in fig. 5, and the memory includes electric fuse
Storage unit 50, the electric fuse storage unit 50 include program voltage input terminal N50.The programmed circuit of the memory includes
Programmable PMOS tube group 51, digital signal generating unit 52 and N number of impedor.The programmable PMOS tube group 51 includes N
A programmable PMOS tube: programmable PMOS tube P51, programmable PMOS tube P52, programmable PMOS tube P5N, Mei Geke
The drain electrode of programming PMOS tube couples the program voltage input terminal N50 of the electric fuse storage unit 50 by an impedor.
Specifically, the drain electrode of the programmable PMOS tube P51 passes through the impedor R11 connection electric fuse storage unit
The drain electrode of 50 program voltage input terminal N50, the programmable PMOS tube P52 pass through the impedor R12 connection electric fuse
The program voltage input terminal N50 of storage unit 50, the drain electrode of the programmable PMOS tube P5N passes through impedor R1N
Connect the program voltage input terminal N50 of the electric fuse storage unit 50.It is the electric fuse storage unit 50, described programmable
The specific structure of PMOS tube group 51 and the digital signal generating unit 52 embodiment corresponding with Fig. 2 is similar, herein no longer
It repeats.
Compared with the corresponding embodiment of Fig. 2, the programmed circuit of memory provided in this embodiment is by increasing N number of resistance
Anti- element makes the equivalent impedance of the programmable PMOS tube group 51 have broader adjustable range, further improves the electricity
The voltage accuracy of the program voltage input terminal N50 of fuse storage unit 50.
The present invention also provides a kind of memory, the memory includes electric fuse storage unit, and the electric fuse storage is single
Member includes program voltage input terminal.The memory further includes the programmed circuit of memory, the programmed circuit of the memory
Specific structure can be as illustrated in fig. 2 or fig. 5.
In conclusion memory provided by the invention and its programmed circuit, can receive actual voltage value and be higher than design electricity
The program voltage of pressure value divides the program voltage by the programmed circuit, makes to input electric fuse storage unit
Voltage meets design requirement.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (9)
1. a kind of programmed circuit of memory, the memory includes electric fuse storage unit, which is characterized in that the memory
Programmed circuit include:
Programmable PMOS tube group, including N number of programmable PMOS tube, the source electrode of N number of programmable PMOS tube are connected and are suitable for defeated
Enter program voltage, the drain electrode of N number of programmable PMOS tube couples the program voltage input terminal of the electric fuse storage unit, institute
State the corresponding reception N position digital signal of grid of N number of programmable PMOS tube, one programmable PMOS of the corresponding control of bits per inch word signal
Pipe on or off, N are integer and N >=2；
Digital signal generating unit is suitable for generating the N position digital signal, and the digital signal generating unit includes: that benchmark is deposited
Storage unit, structure are identical as the structure of the electric fuse storage unit；Benchmark PMOS tube group, including N number of benchmark PMOS tube, it is described
The source electrode of N number of benchmark PMOS tube is connected and is suitable for inputting the program voltage, described in the drain electrode coupling of N number of benchmark PMOS tube
The program voltage input terminal of reference memory cell, the grid of N number of benchmark PMOS tube is corresponding to receive the N position digital signal,
The size of the benchmark PMOS tube is identical as the size of the programmable PMOS tube；Voltage comparator is adapted to compare reference voltage
With the voltage of the program voltage input terminal of the reference memory cell, in the program voltage input terminal of the reference memory cell
Voltage generates the first comparison signal when being higher than the reference voltage, otherwise generates the second comparison signal；N-bit counter, be suitable for pair
Clock pulses is counted to generate the N position digital signal, when receiving first comparison signal to the clock arteries and veins
Row counting forward is rushed in, counting in reverse is carried out to the clock pulses when receiving second comparison signal.
2. the programmed circuit of memory as described in claim 1, which is characterized in that the N-bit counter is forward-backward counter.
3. the programmed circuit of memory as described in claim 1, which is characterized in that the digital signal generating unit also wraps
It includes: the clock generating element suitable for generating the clock pulses.
4. the programmed circuit of memory as claimed in claim 3, which is characterized in that the clock generating element is annular
Oscillator.
5. the programmed circuit of memory as described in claim 1, which is characterized in that the digital signal generating unit includes:
Detection unit is adapted to detect for the voltage value of the program voltage to generate control corresponding with the voltage value of the program voltage
Signal processed；
Storage unit suitable for storing N position digital signal corresponding with the voltage value of the program voltage, and is receiving the control
N position digital signal corresponding with the voltage value of the program voltage is generated when signal processed.
6. the programmed circuit of memory as claimed in claim 5, which is characterized in that the storage unit is N-bit register.
7. the programmed circuit of memory as described in claim 1, which is characterized in that further include: N number of impedor；Each may be used
The drain electrode of programming PMOS tube couples the program voltage input terminal of the electric fuse storage unit by an impedor.
8. the programmed circuit of memory as described in any one of claim 1 to 7, which is characterized in that the electric fuse storage is single
Member further includes fuse element and gating transistor；
One end of the fuse element connects the program voltage input terminal of the electric fuse storage unit, the fuse element it is another
One end connects the drain electrode of the gating transistor；
The grid of the gating transistor is suitable for input gating signal, the source electrode ground connection of the gating transistor.
9. a kind of memory, including electric fuse storage unit, which is characterized in that further include that claim 1 to 8 is described in any item
The programmed circuit of memory.
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| CN201410184849.9A CN105097040B (en) | 2014-05-04 | 2014-05-04 | Memory and its programmed circuit |
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| CN101650973A (en) * | 2008-05-30 | 2010-02-17 | 台湾积体电路制造股份有限公司 | Diode as voltage down converter for otp high programming voltage applications |
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| US7606055B2 (en) * | 2006-05-18 | 2009-10-20 | Micron Technology, Inc. | Memory architecture and cell design employing two access transistors |
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| CN101650973A (en) * | 2008-05-30 | 2010-02-17 | 台湾积体电路制造股份有限公司 | Diode as voltage down converter for otp high programming voltage applications |
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