CN105071221A - High-speed laser chip - Google Patents
High-speed laser chip Download PDFInfo
- Publication number
- CN105071221A CN105071221A CN201510530912.4A CN201510530912A CN105071221A CN 105071221 A CN105071221 A CN 105071221A CN 201510530912 A CN201510530912 A CN 201510530912A CN 105071221 A CN105071221 A CN 105071221A
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- layer
- type
- quantum well
- conducting shell
- well barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
The invention, which belongs to the technical field of the laser, especially relates to a high-speed laser chip comprising a substrate, a buffer layer, a first gradual-changing limitation layer, a corrosion stopping layer 3, a first waveguide layer 4, a first limitation layer 5, a first quantum well barrier layer 6, a quantum well active layer 7, a second quantum well barrier layer 8, a second waveguide layer 9, a grating layer 10, a third gradual-changing limitation layer 11, an ohmic contact layer 12, an insulating medium layer 13, a P type upper electrode 14, and a N type lower electrode 15. According to the invention, the structural position of the corrosion layer is designed again; and compared with the traditional structure, the leakage current can be reduced and the capacitance is also reduced correspondingly, and the electro-optic characteristic of the whole high-speed laser can be improved obviously.
Description
Technical field
The present invention relates to semiconductor laser field, particularly a kind of high-speed laser chip.
Background technology
Traditional high speed semiconductor laser structure is as Fig. 1.This high speed semiconductor laser comprises substrate 0, resilient coating 1, one first gradual change limiting layer 2, one first wave conducting shell 3, Second Wave conducting shell 4, one first quantum well barrier layer 5, one mqw active layer 6, one second quantum well barrier layer 7, one the 3rd ducting layer 8, one etch stop layer 9, one the 4th ducting layer 10, one second gradual change limiting layer 11, one ohmic contact layer 12, one insulating medium layer 13, P type top electrode 14, N-type bottom electrode 15.
The shortcoming of prior art high speed semiconductor laser is, the two ditch table top of its ridge easily produces a large amount of leakage current, and its leakage current produces schematic diagram as shown in Figure 3, and the threshold value of laser increases, and also can increase electric capacity C simultaneously, affect the Frequency Response of laser.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of high-speed laser chip and preparation method thereof.
For reaching above-mentioned purpose, embodiments providing a kind of high-speed laser chip on the one hand, comprising:
One substrate 0, it is N-type InP layer;
One resilient coating 1, it is N-type InP layer and is formed on substrate 0;
One first gradual change limiting layer 2, it is N-type InAl
xga
1-xas layer is also formed on resilient coating 1, x=0.5-0.1;
One etch stop layer 3, it is N-type InGaAsP layer and is formed on the first gradual change limiting layer 2;
One first wave conducting shell 4, it is N-type InP layer and is formed on etch stop layer 3;
One second limiting layer 5, it is N-type InAl
0.5ga
0.5as layer is also formed on first wave conducting shell 4;
One first quantum well barrier layer 6, it is undoped Al
0.3ga
0.7inAs layer is also formed on the second limiting layer 5;
One mqw active layer 7, it is undoped 10 pairs of 6nm thick compressive strain AlGaInAs well layer and is formed in the first quantum well barrier layer 6;
One second quantum well barrier layer 8, it is undoped Al
0.3ga
0.7inAs layer is also formed on mqw active layer 7;
One Second Wave conducting shell 9, it is P type Al
0.5ga
0.5as layer is also formed in the second quantum well barrier layer 8;
One grating layer 10, it is P type Al
0.5ga
0.5as layer is also formed on Second Wave conducting shell 9;
One the 3rd gradual change limiting layer 11, it is P type Al
xga
1-xas layer is also formed at x=0.5-0.1 on grating layer 10;
One ohmic contact layer 12, it is P type InGaAs layer and is formed on the 3rd gradual change limiting layer 11;
One insulating medium layer 13, it is SiO2 layer and is formed on ohmic contact layer 12;
One P type top electrode 14, it is TiPtAu layer and is formed on ohmic contact layer 12;
One N-type bottom electrode 15, it is Au-Sn layer and is formed at below substrate 0.
Preferably, described etch stop layer 3 forms the two ditch platform structure of ridge, the two ditch platform structure of described ridge specifically comprises:
By described first wave conducting shell 4, second limiting layer 5, first quantum well barrier layer 6, mqw active layer 7; , the second quantum well barrier layer 8, Second Wave conducting shell 9, grating layer 10, the 3rd gradual change limiting layer 11 and ohmic contact layer 12, three backbones formed by etching operation and two raceway grooves.
Preferably, described insulating medium layer 13 also covers the cross section that in the two ditch platform structure of described ridge, first wave conducting shell 4, second limiting layer 5, first quantum well barrier layer 6, mqw active layer 7, second quantum well barrier layer 8, Second Wave conducting shell 9, grating layer 10, the 3rd gradual change limiting layer 11 and ohmic contact layer 12 are formed in corrosion process.
Preferably, the thickness of described etch stop layer 3 is 100nm.
Preferably, the thickness of described insulating medium layer 13 is 250nm, and refractive index is 1.5.
Preferably, the thickness of described P type top electrode 14 is 2 μm.
Preferably, the thickness of described N-type bottom electrode 15 is 300nm.
Embodiments provide a kind of manufacture method of high-speed laser chip on the other hand, the method comprises the following steps:
1) resilient coating 1, the first gradual change limiting layer 2 generated successively on substrate 0, etch stop layer 3, first wave conducting shell 4, second limiting layer 5, first quantum well barrier layer 6, mqw active layer 7, second quantum well barrier layer 8, Second Wave conducting shell 9, grating layer 10, the 3rd gradual change limiting layer 11, ohmic contact layer 12;
2) photoresist that coating 2 μm is thick on ohmic contact layer 12 also toasts within the scope of 88-92 DEG C, on ohmic contact layer 12, make photoetching offset plate figure by exposure imaging again and toast within the scope of 118-122 DEG C, under this photoresist masking, erode ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, Second Wave conducting shell 9, second quantum well barrier layer 8, mqw active layer 7, first quantum well barrier layer 6, second limiting layer 5, corrode first wave conducting shell 4 again, until on etch stop layer 3, to be processed into the two ditch mesa structure of ridge, the insulating medium layer 13 that deposit 250nm is thick on the two ditch mesa structure of whole ridge, and utilize photoetching method and caustic solution to set out window on table top ohmic contact layer 12,
3) the TiPtAu layer that sputtering 2 μm is thick on ohmic contact layer 12, makes P type top electrode 14;
4) thinning and polished substrate 0 to 100 μm, makes N-type bottom electrode 15, obtains described chip of laser structure.
Preferably, step 1) described in extension generate method be molecular beam epitaxy or metallorganic chemical vapor deposition method.
Preferably, step 2) in described in erode ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, Second Wave conducting shell 9, second quantum well barrier layer 8, mqw active layer 7, first quantum well barrier layer 6, second limiting layer 5 corrosive liquid be specially saturated bromine water corrosive liquid.
Preferably, step 2) described in the width of photoetching offset plate figure be 2-3 μm.
Preferably, step 2) in the corrosive liquid of corrosion first wave conducting shell 4 be specially: volume ratio is the mixed liquor of HCl and H3PO4 of 1:2.
Preferably, step 2) described in the width of window be 3-4 μm.
The advantage that the present invention has is:
The present invention redesigns the locations of structures of corrosion layer.As shown in Figure 2, its electric leakage schematic diagram is shown in Fig. 4, compares with tradition, and leakage current can reduce, and electric capacity also can correspondingly reduce, and is significantly improved to the photoelectric characteristic of whole high-speed laser.
Accompanying drawing explanation
Fig. 1 is the generalized section of a kind of existing chip of laser structure provided by the invention;
The generalized section of a kind of chip of laser structure that Fig. 2 provides for the embodiment of the present invention;
The existing chip of laser electric leakage principle schematic that Fig. 3 provides for the embodiment of the present invention;
A kind of chip of laser electric leakage principle schematic that Fig. 4 provides for the embodiment of the present invention;
The performance chart schematic diagram of existing a kind of chip of laser that Fig. 5 provides for the embodiment of the present invention;
The performance chart schematic diagram of a kind of chip of laser that Fig. 6 provides for the embodiment of the present invention;
The frequency response curve figure of existing a kind of chip of laser that Fig. 7 provides for the embodiment of the present invention;
The frequency response curve figure of a kind of chip of laser that Fig. 8 provides for the embodiment of the present invention.
Embodiment
Below with reference to specific embodiment, the present invention is described in further detail.
Embodiment one
The embodiment of the present invention one provides a kind of high-speed laser chip, and the generalized section of described chip of laser structure as shown in Figure 2.Its structure specifically comprises:
One substrate 0, it is N-type InP layer;
One resilient coating 1, it is N-type InP layer and is formed on substrate 0;
One first gradual change limiting layer 2, it is N-type InAl
xga
1-xas layer is also formed on resilient coating 1, x=0.5-0.1;
One etch stop layer 3, it is N-type InGaAsP layer and is formed on the first gradual change limiting layer 2;
Described etch stop layer 3 is formed the two ditch platform structure of ridge, and the two ditch platform structure of described ridge specifically comprises:
One first wave conducting shell 4, it is N-type InP layer and is formed on etch stop layer 3;
One second limiting layer 5, it is N-type InAl
0.5ga
0.5as layer is also formed on first wave conducting shell 4;
One first quantum well barrier layer 6, it is undoped Al
0.3ga
0.7inAs layer is also formed on the second limiting layer 5;
One mqw active layer 7, it is undoped 10 pairs of 6nm thick compressive strain AlGaInAs well layer and is formed in the first quantum well barrier layer 6;
One second quantum well barrier layer 8, it is undoped Al
0.3ga
0.7inAs layer is also formed on mqw active layer 7;
One Second Wave conducting shell 9, it is P type Al
0.5ga
0.5as layer is also formed in the second quantum well barrier layer 8;
One grating layer 10, it is P type Al
0.5ga
0.5as layer is also formed on Second Wave conducting shell 9;
One the 3rd gradual change limiting layer 11, it is P type Al
xga
1-xas layer is also formed at x=0.5-0.1 on grating layer 10;
One ohmic contact layer 12, it is P type InGaAs layer and is formed on the 3rd gradual change limiting layer 11;
One insulating medium layer 13, it is SiO2 layer and is formed on ohmic contact layer 12;
Described insulating medium layer 13 also covers the cross section that in the two ditch platform structure of described ridge, first wave conducting shell 4, second limiting layer 5, first quantum well barrier layer 6, mqw active layer 7, second quantum well barrier layer 8, Second Wave conducting shell 9, grating layer 10, the 3rd gradual change limiting layer 11 and ohmic contact layer 12 are formed in corrosion process.
One P type top electrode 14, it is TiPtAu layer and is formed on ohmic contact layer 12;
One N-type bottom electrode 15, it is Au-Sn layer and is formed at below substrate 0.
The present invention redesigns the locations of structures of corrosion layer.As shown in Figure 2, its schematic diagram is shown in Fig. 4, compares with tradition, and leakage current can reduce, and electric capacity also can correspondingly reduce, and is significantly improved to the photoelectric characteristic of whole high-speed laser.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, the thickness of described etch stop layer 3 is 100nm.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, the thickness of described insulating medium layer 13 is 250nm, and refractive index is 1.5.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, the thickness of described P type top electrode 14 is 2 μm.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, the thickness of described N-type bottom electrode 15 is 300nm.
Compared with prior art, it is different that maximum difference is exactly the design of InGaAsP etch stop layer to chip of laser structure of the present invention.Traditional high speed semiconductor laser structure is as Fig. 1.Its shortcoming is, produces a large amount of leakage current as shown in Figure 3, and the threshold value of laser increases, and also can increase electric capacity C simultaneously, affect the Frequency Response of laser.
The embodiment of the present invention provide high-speed laser chip pins to this situation, redesign the locations of structures of corrosion layer.As shown in Figure 2, its schematic diagram is shown in Fig. 4, compares with tradition, and leakage current can reduce, and electric capacity also can correspondingly reduce, and is significantly improved to the photoelectric characteristic of whole high-speed laser.
Embodiment two
Embodiments provide a kind of manufacture method of high-speed laser chip, the method comprises the following steps:
1) resilient coating 1, the first gradual change limiting layer 2 generated successively on substrate 0, etch stop layer 3, first wave conducting shell 4, second limiting layer 5, first quantum well barrier layer 6, mqw active layer 7, second quantum well barrier layer 8, Second Wave conducting shell 9, grating layer 10, the 3rd gradual change limiting layer 11, ohmic contact layer 12;
2) photoresist that coating 2 μm is thick on ohmic contact layer 12 also toasts within the scope of 88-92 DEG C, on ohmic contact layer 12, make photoetching offset plate figure by exposure imaging again and toast within the scope of 118-122 DEG C, under this photoresist masking, erode ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, Second Wave conducting shell 9, second quantum well barrier layer 8, mqw active layer 7, first quantum well barrier layer 6, second limiting layer 5, corrode first wave conducting shell 4 again, until on etch stop layer 3, to be processed into the two ditch mesa structure of ridge, the insulating medium layer 13 that deposit 250nm is thick on the two ditch mesa structure of whole ridge, and utilize photoetching method and caustic solution to set out window on table top ohmic contact layer 12,
3) the TiPtAu layer that sputtering 2 μm is thick on ohmic contact layer 12, makes P type top electrode 14;
4) thinning and polished substrate 0 to 100 μm, makes N-type bottom electrode 15, obtains described chip of laser structure.
Embodiments provide the method for making as implemented high-speed laser chip as described in,
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, step 1) described in the method that generates of extension be molecular beam epitaxy or metallorganic chemical vapor deposition method.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, step 2) in described in erode ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, Second Wave conducting shell 9, second quantum well barrier layer 8, mqw active layer 7, first quantum well barrier layer 6, second limiting layer 5 corrosive liquid be specially saturated bromine water corrosive liquid.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, step 2) described in the width of photoetching offset plate figure be 2-3 μm.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, step 2) in the corrosive liquid of corrosion first wave conducting shell 4 be specially: volume ratio is the mixed liquor of HCl and H3PO4 of 1:2.
In conjunction with the embodiment of the present invention one, there is a kind of preferred scheme, wherein, step 2) described in the width of window be 3-4 μm.
Embodiment three
The embodiment of the present invention utilizes structure as etch stop layer newly-designed in embodiment one to do whole ridge waveguide processing technology step 1 described above)-4) after the high-speed laser chip that obtains, carry out test and obtain corresponding test result, made laser threshold is reduced to about 12mA by original 14mA, sees Fig. 5,6.And Frequency Response significantly improves, bandwidth corresponding within the scope of 3dB significantly improves, and as Fig. 7,8, wherein, x-axis represents frequency, and y-axis represents frequency response, by the contrast of Fig. 7 and Fig. 8, can show that whole high-speed laser chip photo characteristic is greatly improved.
It should be noted that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (7)
1. a high-speed laser chip, is characterized in that, comprising:
One substrate (0), it is N-type InP layer;
One resilient coating (1), it is N-type InP layer and is formed on substrate (0);
One first gradual change limiting layer (2), it is N-type InAl
xga
1-xas layer is also formed on resilient coating (1), x=0.5-0.1;
One etch stop layer (3), it is N-type InGaAsP layer and is formed on the first gradual change limiting layer (2);
One first wave conducting shell (4), it is N-type InP layer and is formed on etch stop layer (3);
One second limiting layer (5), it is N-type InAl
0.5ga
0.5as layer is also formed on first wave conducting shell (4);
One first quantum well barrier layer (6), it is undoped Al
0.3ga
0.7inAs layer is also formed on the second limiting layer (5);
One mqw active layer (7), it is undoped 10 pairs of 6nm thick compressive strain AlGaInAs well layer and is formed in the first quantum well barrier layer (6);
One second quantum well barrier layer (8), it is undoped Al
0.3ga
0.7inAs layer is also formed on mqw active layer (7);
One Second Wave conducting shell (9), it is P type Al
0.5ga
0.5as layer is also formed in the second quantum well barrier layer (8);
One grating layer (10), it is P type Al
0.5ga
0.5as layer is also formed on Second Wave conducting shell (9);
One the 3rd gradual change limiting layer (11), it is P type Al
xga
1-xas layer is also formed at the upper x=0.5-0.1 of grating layer (10);
One ohmic contact layer (12), it is P type InGaAs layer and is formed on the 3rd gradual change limiting layer (11);
One insulating medium layer (13), it is SiO2 layer and is formed on ohmic contact layer (12);
One P type top electrode (14), it is TiPtAu layer and is formed on ohmic contact layer (12);
One N-type bottom electrode (15), it is Au-Sn layer and is formed at below substrate (0).
2. high-speed laser chip as claimed in claim 1, is characterized in that, in the two ditch platform structure of described etch stop layer (3) upper formation ridge, the two ditch platform structure of described ridge specifically comprises:
By described first wave conducting shell (4), the second limiting layer (5), the first quantum well barrier layer (6), mqw active layer (7), the second quantum well barrier layer (8), Second Wave conducting shell (9), grating layer (10), the 3rd gradual change limiting layer (11) and ohmic contact layer (12), three backbones formed by etching operation and two raceway grooves.
3. high-speed laser chip as claimed in claim 1, it is characterized in that, described insulating medium layer (13) also covers the cross section that in the two ditch platform structure of described ridge, first wave conducting shell (4), the second limiting layer (5), the first quantum well barrier layer (6), mqw active layer (7), the second quantum well barrier layer (8), Second Wave conducting shell (9), grating layer (10), the 3rd gradual change limiting layer (11) and ohmic contact layer (12) are formed in corrosion process.
4. the high-speed laser chip as described in as arbitrary in claim 1-3, it is characterized in that, the thickness of described etch stop layer (3) is 100nm.
5. the high-speed laser chip as described in as arbitrary in claim 1-3, it is characterized in that, the thickness of described insulating medium layer (13) is 250nm, and refractive index is 1.5.
6. the high-speed laser chip as described in as arbitrary in claim 1-3, it is characterized in that, the thickness of described P type top electrode (14) is 2 μm.
7. the high-speed laser chip as described in as arbitrary in claim 1-3, it is characterized in that, the thickness of described N-type bottom electrode (15) is 300nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510530912.4A CN105071221A (en) | 2015-08-26 | 2015-08-26 | High-speed laser chip |
| CN201510800418.5A CN105428992B (en) | 2015-08-26 | 2015-11-19 | A kind of high-speed laser chip structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510530912.4A CN105071221A (en) | 2015-08-26 | 2015-08-26 | High-speed laser chip |
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| CN105071221A true CN105071221A (en) | 2015-11-18 |
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| CN201510530912.4A Pending CN105071221A (en) | 2015-08-26 | 2015-08-26 | High-speed laser chip |
| CN201510800418.5A Active CN105428992B (en) | 2015-08-26 | 2015-11-19 | A kind of high-speed laser chip structure and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932544A (en) * | 2016-06-24 | 2016-09-07 | 武汉电信器件有限公司 | High-speed laser chip structure and manufacturing method thereof |
| CN113113839A (en) * | 2021-03-19 | 2021-07-13 | 武汉光迅科技股份有限公司 | Laser chip |
| CN114400502A (en) * | 2022-01-04 | 2022-04-26 | 福建慧芯激光科技有限公司 | Round light spot single-mode semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106887788B (en) * | 2017-04-27 | 2019-07-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser and preparation method thereof |
| CN107946902A (en) * | 2017-12-14 | 2018-04-20 | 武汉电信器件有限公司 | A kind of Distributed Feedback Laser and preparation method thereof |
| CN112838152B (en) * | 2019-11-25 | 2022-06-14 | 山东浪潮华光光电子股份有限公司 | Light emitting diode epitaxial structure with specific pattern and preparation method thereof |
| CN115021081A (en) * | 2021-02-18 | 2022-09-06 | 青岛海信激光显示股份有限公司 | Light emitting chip and laser |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3521792B2 (en) * | 1999-03-03 | 2004-04-19 | 松下電器産業株式会社 | Manufacturing method of semiconductor laser |
| WO2004032296A1 (en) * | 2002-09-20 | 2004-04-15 | Sony Corporation | Semiconductor laser device and production method therefor |
| CN101969179B (en) * | 2010-11-24 | 2012-04-04 | 武汉华工正源光子技术有限公司 | Method for manufacturing reversed-mesa-type ridged waveguide semiconductor laser |
| CN103022892B (en) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN104466675B (en) * | 2014-12-15 | 2017-08-29 | 中国电子科技集团公司第十三研究所 | Narrow angle of divergence ridge waveguide semiconductor laser |
-
2015
- 2015-08-26 CN CN201510530912.4A patent/CN105071221A/en active Pending
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932544A (en) * | 2016-06-24 | 2016-09-07 | 武汉电信器件有限公司 | High-speed laser chip structure and manufacturing method thereof |
| CN105932544B (en) * | 2016-06-24 | 2019-07-26 | 武汉电信器件有限公司 | A kind of high-speed laser chip structure and preparation method thereof |
| CN113113839A (en) * | 2021-03-19 | 2021-07-13 | 武汉光迅科技股份有限公司 | Laser chip |
| CN113113839B (en) * | 2021-03-19 | 2022-05-13 | 武汉光迅科技股份有限公司 | Laser chip |
| CN114400502A (en) * | 2022-01-04 | 2022-04-26 | 福建慧芯激光科技有限公司 | Round light spot single-mode semiconductor laser |
| CN114400502B (en) * | 2022-01-04 | 2024-04-09 | 福建慧芯激光科技有限公司 | Circular facula single-mode semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105428992B (en) | 2019-02-01 |
| CN105428992A (en) | 2016-03-23 |
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