CN105070664A - Optoelectronic device ZnO/ZnS heterojunction nano-array film preparing method - Google Patents
Optoelectronic device ZnO/ZnS heterojunction nano-array film preparing method Download PDFInfo
- Publication number
- CN105070664A CN105070664A CN201510554660.9A CN201510554660A CN105070664A CN 105070664 A CN105070664 A CN 105070664A CN 201510554660 A CN201510554660 A CN 201510554660A CN 105070664 A CN105070664 A CN 105070664A
- Authority
- CN
- China
- Prior art keywords
- zno
- room temperature
- hours
- sample
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002073 nanorod Substances 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 14
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 claims description 6
- 239000004246 zinc acetate Substances 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000003599 detergent Substances 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 71
- 239000011787 zinc oxide Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- -1 nanometer rods Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Chemically Coating (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
The invention relates to the technical field of optoelectronics, and specifically provides an optoelectronic device ZnO/ZnS heterojunction nano-array film preparing method. The method comprises the steps of substrate washing, ZnO seed layer preparing, ZnO nanorod ordered array thin film preparing, and ZnO/ZnS heterostructure nano-array preparing. The method is characterized by simple process, convenient operation and low preparing temperature and is suitable for engineering application; the products are good in performance.
Description
Technical field
The present invention relates to optoelectronics technical field, particularly relate to a kind of ZnO/ZnS heterojunction nano-array film for opto-electronic device.
Background technology
Since late 1980s, due to developing of information and photoelectronic industry, requirements at the higher level are proposed for semi-conducting material photoelectric characteristic, thus accelerate with the progress of III-V race and II-VI compounds of group third generation semi-conducting material that is representative.Homojunction and the heterojunction of zinc oxide (ZnO) material have huge development potentiality in fields such as surface acoustic wave, transparency electrode, luminescent devices, become the focus of people's extensive concern.ZnO is a kind of broad stopband direct band gap n-type semiconductor of hexagonal wurtzite structure, lattice constant a=0.325nm, c=0.521nm, under room temperature, energy gap is about 3.37eV, exciton bind energy is 60meV, has good chemical stability, nontoxic, abundant raw material, the advantage such as cheap.But the electric property of these homojunctions and heterojunction does not reach the requirement of practical application.Mainly because p-type material limits its electric property, p-type ZnO material is repeatable poor, is difficult to the high-quality p-type ZnO of preparation, and Si, NiO, CuAlO
2, there is larger lattice mismatch in the p-type material such as ZnMgO and ZnO, the photoelectric properties of prepared ZnO heterojunction have certain limitation.Therefore, need to find a kind of p-type material good with ZnO lattice.Zinc sulphide (ZnS) is a kind of broad stopband direct band gap p-type semiconductor material, lattice constant a=0.381nm, c=0.623nm, under room temperature, energy gap is 3.72eV, refractive index is 2.35, has a wide range of applications in fields such as solar cell and short-wavelength light electronic devices.In addition, because O and S is congeners, and ionic radius is more or less the same.Therefore, the Lattice Matching of ZnO and ZnS is good, and high performance ZnO/ZnS heterogeneous p-n is conducive to the opto-electronic device film preparing high-quality.
In recent years, low-dimension nano material shows the characteristic of a series of excellence, and therefore the ZnO nano film of the Structure composing such as nano wire, nanometer rods, nanotube becomes the focus of research.Adopt nanorod structure can overcome existing traditional structure complicated process of preparation, operate inconvenience, preparation temperature is high, properties of product are unstable, be unsuitable for the shortcomings such as through engineering approaches application.
Summary of the invention
For the problems referred to above, the object of the present invention is to provide that a kind of cost is low, preparation technology is simply for the ZnO/ZnS heterojunction nano-array film of opto-electronic device.
For achieving the above object, the scheme that the present invention adopts is: a kind of opto-electronic device ZnO/ZnS heterojunction nano-array membrane preparation method, comprises the following steps:
A () cleaning opto-electronic device glass substrate: first clean glass substrate with liquid detergent, then boil with the concentrated sulfuric acid, then successively respectively in absolute ethyl alcohol and deionized water for ultrasonic cleaning;
The preparation of (b) ZnO Seed Layer: mixed solution zinc acetate dihydrate being at room temperature dissolved in EGME and monoethanolamine, zinc acetate dihydrate concentration is in the solution 0.8mol/L, and the mol ratio of zinc acetate and monoethanolamine keeps 1:1; This mixed liquor is placed in water-bath temperature control 60 DEG C, magnetic agitation 4 hours, obtains clear, uniform colloidal sol, by still aging 24 hours of obtained colloidal sol, for the coating of film; Sheet glass after step (a) being cleaned is substrate, adopts sol evenning machine spin-coating method by the sol filming after still aging, dries, repeated multiple times increase thickness at 200 DEG C; Then sample to be transferred in chamber type electric resistance furnace 300 DEG C of constant temperature 30 minutes, then 550 DEG C of cycle annealings 2 hours, to naturally cool to room temperature in stove, undoped ZnO Seed Layer can be obtained;
The preparation of (c) ZnO nanorod oldered array film: ammoniacal liquor is added drop-wise in the zinc nitrate solution in stirring, the mol ratio of ammoniacal liquor and zinc nitrate is made to be 8:1, zinc nitrate concentration is in the solution 0.06mol/L, then the sample that grown ZnO Seed Layer through step (b) is put into autoclave, pour above-mentioned solution into, the reactor of good seal is put into baking oven in 50 ~ 90 DEG C of heating 4 ~ 9 hours; After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere;
The preparation of (d) ZnO/ZnS heterogeneous structural nano array: 1.6g thiocarbamide, 4.6g zinc acetate, 13.1g isopropyl alcohol and 14.8g ammoniacal liquor are put into beaker, and stir 30 minutes in room temperature magnetic stirring apparatus, then the sample that grown ZnO nanorod film through step (c) is put into autoclave, pour above-mentioned solution into, the reactor of good seal is put into baking oven in 120 DEG C of heating 4 hours; After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere.
ZnO/ZnS heterojunction nano-array film of the present invention, adopt hydrothermal synthesis method in ZnO Seed Layer, grow layer of ZnO nanometer rods oldered array membrane structure, have that equipment cost is low, technique is simple, easy to operate, preparation temperature is lower, properties of product are excellent, be suitable for the advantages such as through engineering approaches application.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention structure principle chart;
Description of symbols in figure: 1-glass substrate layer, 2-ZnO Seed Layer, 3-ZnO nanorod layer, 4-ZnS nanometer rods layer
.
Embodiment
For understanding the present invention better, below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is described further, see Fig. 1:
By a kind of ZnO/ZnS heterojunction nano-array film for opto-electronic device that the present invention program implements, include four layers that combine successively from the inside to the outside, be respectively: glass substrate layer, ZnO Seed Layer, ZnO nanorod layer, ZnS nanometer rods layer, glass substrate layer is substrate, first with liquid detergent cleaning, then boil with the concentrated sulfuric acid, then respectively in absolute ethyl alcohol and deionized water for ultrasonic cleaning, make its superficial layer bright and clean, be convenient to the coating of ZnO Seed Layer.ZnO Seed Layer is coated in on the above-mentioned glass substrate layer bright and clean top layer that is substrate, a certain amount of zinc acetate dihydrate is at room temperature dissolved in the mixed solution of EGME and monoethanolamine, zinc acetate dihydrate concentration is in the solution 0.8mol/L, and the mol ratio of zinc acetate and monoethanolamine keeps 1:1.This mixed liquor is placed in water-bath temperature control 60 DEG C, magnetic agitation 4 hours, obtains clear, uniform colloidal sol, by still aging 24 hours of obtained colloidal sol, for the coating of film.With the sheet glass of above-mentioned cleaning for substrate, adopt sol evenning machine spin-coating method plated film, dry at 200 DEG C, repeated multiple times increase thickness.Then sample to be transferred in chamber type electric resistance furnace 300 DEG C of constant temperature 30 minutes, then 550 DEG C of cycle annealings 2 hours, to naturally cool to room temperature in stove, undoped ZnO Seed Layer can be obtained.ZnO nanorod layer ordering growth is nano bar-shape structure in ZnO Seed Layer, a certain amount of ammoniacal liquor is added drop-wise in the zinc nitrate solution in stirring, then the sample that grown ZnO seed is put into autoclave, and pour above-mentioned solution into, finally the reactor of good seal is put into baking oven in 50 ~ 90 DEG C of heating 4 ~ 9 hours.After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere, obtain ZnO nanorod layer.Hydrothermal synthesis method is adopted to grow one deck ZnS nano thin-film on the above-mentioned films, ZnS nanometer rods layer growth forms heterojunction on ZnO nanorod layer, 1.6g thiocarbamide, 4.6g zinc acetate, 13.1g isopropyl alcohol and 14.8g ammoniacal liquor are put into beaker, and stirs 30 minutes in room temperature magnetic stirring apparatus.Then the sample that grown ZnO nanorod film is put into autoclave, pour above-mentioned solution into, the reactor of good seal is put into baking oven in 120 DEG C of heating 4 hours; After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere.
Claims (1)
1. an opto-electronic device ZnO/ZnS heterojunction nano-array membrane preparation method, is characterized in that, comprise the following steps:
A () cleaning opto-electronic device glass substrate: first clean glass substrate with liquid detergent, then boil with the concentrated sulfuric acid, then successively respectively in absolute ethyl alcohol and deionized water for ultrasonic cleaning;
The preparation of (b) ZnO Seed Layer: mixed solution zinc acetate dihydrate being at room temperature dissolved in EGME and monoethanolamine, zinc acetate dihydrate concentration is in the solution 0.8mol/L, and the mol ratio of zinc acetate and monoethanolamine keeps 1:1; This mixed liquor is placed in water-bath temperature control 60 DEG C, magnetic agitation 4 hours, obtains clear, uniform colloidal sol, by still aging 24 hours of obtained colloidal sol, for the coating of film; Sheet glass after step (a) being cleaned is substrate, adopts sol evenning machine spin-coating method by the sol filming after still aging, dries, repeated multiple times increase thickness at 200 DEG C; Then sample to be transferred in chamber type electric resistance furnace 300 DEG C of constant temperature 30 minutes, then 550 DEG C of cycle annealings 2 hours, to naturally cool to room temperature in stove, undoped ZnO Seed Layer can be obtained;
The preparation of (c) ZnO nanorod oldered array film: ammoniacal liquor is added drop-wise in the zinc nitrate solution in stirring, the mol ratio of ammoniacal liquor and zinc nitrate is made to be 8:1, zinc nitrate concentration is in the solution 0.06mol/L, then the sample that grown ZnO Seed Layer through step (b) is put into autoclave, pour above-mentioned solution into, the reactor of good seal is put into baking oven in 50 ~ 90 DEG C of heating 4 ~ 9 hours; After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere;
The preparation of (d) ZnO/ZnS heterogeneous structural nano array: 1.6g thiocarbamide, 4.6g zinc acetate, 13.1g isopropyl alcohol and 14.8g ammoniacal liquor are put into beaker, and stir 30 minutes in room temperature magnetic stirring apparatus, then the sample that grown ZnO nanorod film through step (c) is put into autoclave, pour above-mentioned solution into, the reactor of good seal is put into baking oven in 120 DEG C of heating 4 hours; After baking oven cool to room temperature, sample is taken out, and with deionized water rinsing, then dry in atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510554660.9A CN105070664B (en) | 2015-09-04 | 2015-09-04 | Opto-electronic device ZnO/ZnS hetero-junctions nano-array membrane preparation methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510554660.9A CN105070664B (en) | 2015-09-04 | 2015-09-04 | Opto-electronic device ZnO/ZnS hetero-junctions nano-array membrane preparation methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105070664A true CN105070664A (en) | 2015-11-18 |
| CN105070664B CN105070664B (en) | 2017-11-10 |
Family
ID=54500001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510554660.9A Active CN105070664B (en) | 2015-09-04 | 2015-09-04 | Opto-electronic device ZnO/ZnS hetero-junctions nano-array membrane preparation methods |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105070664B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106596656A (en) * | 2016-12-15 | 2017-04-26 | 福州大学 | Titanium dioxide-supported ferric oxide nanoheterostructure gas-sensitive element synthesized on basis of MOF template method |
| CN106906470A (en) * | 2016-12-07 | 2017-06-30 | 刘欣萍 | A kind of zinc oxide zinc sulfide nano film |
| CN107275437A (en) * | 2017-05-27 | 2017-10-20 | 合肥工业大学 | A kind of preparation method and its usage of the photo-detector based on the vertical nanometer stick arrays of ZnO |
| CN107673401A (en) * | 2017-10-25 | 2018-02-09 | 广西沙田仙人滩农业投资有限公司 | A kind of preparation method of nanoscale ZnS films |
| CN109879607A (en) * | 2019-03-28 | 2019-06-14 | 中国民航大学 | The preparation method of the modified hydrophobic automatically cleaning film of ZnO/ZnS nano-chip arrays |
| CN110102333A (en) * | 2019-06-19 | 2019-08-09 | 牡丹江师范学院 | A kind of preparation method of C, N codope ZnO nano-structure array |
| CN111180293A (en) * | 2020-02-14 | 2020-05-19 | 福建工程学院 | Flexible ZnO @ TiN core-shell structure array cathode and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005060132A (en) * | 2003-08-08 | 2005-03-10 | Nof Corp | Method for manufacturing semiconductor nano fine crystal |
| KR100785525B1 (en) * | 2007-01-30 | 2007-12-12 | 고려대학교 산학협력단 | Heterostructure of luminescence zno nano-wire comprising zns quantum dot and method for fabricating the same |
| CN101824613A (en) * | 2010-04-19 | 2010-09-08 | 西安交通大学 | Method for growing zinc oxide nanowire array on zinc aluminum oxide conductive film |
| US20110315954A1 (en) * | 2010-06-24 | 2011-12-29 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal, method of manufacture thereof and articles including the same |
| CN104022189A (en) * | 2014-06-23 | 2014-09-03 | 山东建筑大学 | Method for preparing ZnO/ZnS composite optoelectronic film |
-
2015
- 2015-09-04 CN CN201510554660.9A patent/CN105070664B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005060132A (en) * | 2003-08-08 | 2005-03-10 | Nof Corp | Method for manufacturing semiconductor nano fine crystal |
| KR100785525B1 (en) * | 2007-01-30 | 2007-12-12 | 고려대학교 산학협력단 | Heterostructure of luminescence zno nano-wire comprising zns quantum dot and method for fabricating the same |
| CN101824613A (en) * | 2010-04-19 | 2010-09-08 | 西安交通大学 | Method for growing zinc oxide nanowire array on zinc aluminum oxide conductive film |
| US20110315954A1 (en) * | 2010-06-24 | 2011-12-29 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal, method of manufacture thereof and articles including the same |
| CN104022189A (en) * | 2014-06-23 | 2014-09-03 | 山东建筑大学 | Method for preparing ZnO/ZnS composite optoelectronic film |
Non-Patent Citations (1)
| Title |
|---|
| 张蕾: "《ZnO/ZnS异质结构纳米棒的制备以及性能研究》", 《胶体与聚合物》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106906470A (en) * | 2016-12-07 | 2017-06-30 | 刘欣萍 | A kind of zinc oxide zinc sulfide nano film |
| CN106906470B (en) * | 2016-12-07 | 2019-10-11 | 陈超 | A kind of zinc oxide-zinc sulfide nano film |
| CN106596656A (en) * | 2016-12-15 | 2017-04-26 | 福州大学 | Titanium dioxide-supported ferric oxide nanoheterostructure gas-sensitive element synthesized on basis of MOF template method |
| CN106596656B (en) * | 2016-12-15 | 2019-05-10 | 福州大学 | A kind of gas sensor of the titanium dichloride load di-iron trioxide nano-heterogeneous structure based on MOF Template synthesis |
| CN107275437A (en) * | 2017-05-27 | 2017-10-20 | 合肥工业大学 | A kind of preparation method and its usage of the photo-detector based on the vertical nanometer stick arrays of ZnO |
| CN107275437B (en) * | 2017-05-27 | 2019-03-05 | 合肥工业大学 | A kind of preparation method and its usage of the optical detector based on the vertical nanometer stick array of ZnO |
| CN107673401A (en) * | 2017-10-25 | 2018-02-09 | 广西沙田仙人滩农业投资有限公司 | A kind of preparation method of nanoscale ZnS films |
| CN109879607A (en) * | 2019-03-28 | 2019-06-14 | 中国民航大学 | The preparation method of the modified hydrophobic automatically cleaning film of ZnO/ZnS nano-chip arrays |
| CN110102333A (en) * | 2019-06-19 | 2019-08-09 | 牡丹江师范学院 | A kind of preparation method of C, N codope ZnO nano-structure array |
| CN111180293A (en) * | 2020-02-14 | 2020-05-19 | 福建工程学院 | Flexible ZnO @ TiN core-shell structure array cathode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105070664B (en) | 2017-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105070664A (en) | Optoelectronic device ZnO/ZnS heterojunction nano-array film preparing method | |
| CN105826425B (en) | A kind of preparation method of copper-zinc-tin-sulfur film solar cell | |
| CN107946393B (en) | CdTe thin-film solar cell based on SnTe as back electrode buffer layer and preparation method thereof | |
| CN106986373A (en) | A kind of preparation method of ZnO nanorod | |
| CN105514276B (en) | A kind of mesoporous shape perovskite photovoltaic material and preparation method thereof | |
| CN101312218A (en) | Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method | |
| CN102800747A (en) | Preparation method of ZnS-cladded ZnO nanoarray core-shell structure | |
| CN109148625A (en) | Copper zinc tin sulfur selenium thin-film solar cells and preparation method thereof | |
| CN101774629A (en) | Controllable preparation method of p-type and n-type cuprous oxide film by using hydrothermal method | |
| CN110473927B (en) | Cuprous oxide/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof | |
| CN102208487B (en) | Preparation method of nanostructure heterojunction of CuInSe nanocrystal, cadmium sulfide quantum dot and zinc oxide nanowire array | |
| CN113314672A (en) | Perovskite solar cell and preparation method thereof | |
| CN104022189B (en) | A kind of method preparing ZnO/ZnS composite photoelectric film | |
| CN202042488U (en) | Solar cell light-trapping structure | |
| CN204857740U (en) | Opto electronic device znOZnS heterojunction nanoarray membrane | |
| CN204118109U (en) | A kind of LED chip of NEW TYPE OF COMPOSITE transparency electrode | |
| CN107394023B (en) | A kind of preparation method of crystallized nano structure zinc oxide transparent conductive film | |
| CN106847951B (en) | A kind of carbon quantum dot load cuprous sulfocyanide optoelectronic film and preparation method thereof | |
| CN103236466A (en) | Method for manufacturing window layers of copper, zinc, tin and sulfur solar cells | |
| CN106784038B (en) | A kind of preparation method of the adjustable optoelectronic film of component | |
| CN114887614A (en) | Preparation method of ZnO flexible film with high optical performance | |
| CN112563118B (en) | In-doped CdS film, preparation method and CIGS cell prepared by same | |
| CN110016681B (en) | Ternary semiconductor laminated composite photoelectrode and preparation method and application thereof | |
| CN109019663A (en) | A kind of ZnO nanorod, QLED device and preparation method thereof | |
| CN107785459B (en) | Cadmiumsulfide quantum dot/silicon nano hole column solar battery and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |