CN105060896A - Preparation method of silicon carbide ceramic precision device - Google Patents
Preparation method of silicon carbide ceramic precision device Download PDFInfo
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- CN105060896A CN105060896A CN201510493542.1A CN201510493542A CN105060896A CN 105060896 A CN105060896 A CN 105060896A CN 201510493542 A CN201510493542 A CN 201510493542A CN 105060896 A CN105060896 A CN 105060896A
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- silicon carbide
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- carbide ceramics
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 30
- 239000000919 ceramic Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000011230 binding agent Substances 0.000 claims abstract description 23
- 238000002156 mixing Methods 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000005238 degreasing Methods 0.000 claims abstract description 8
- 238000001746 injection moulding Methods 0.000 claims abstract description 8
- 229910021392 nanocarbon Inorganic materials 0.000 claims abstract description 7
- 238000005469 granulation Methods 0.000 claims abstract description 6
- 230000003179 granulation Effects 0.000 claims abstract description 6
- 239000006057 Non-nutritive feed additive Substances 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- -1 polyethylene Polymers 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 230000000630 rising effect Effects 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000006731 degradation reaction Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 235000021355 Stearic acid Nutrition 0.000 claims description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000008117 stearic acid Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 239000011148 porous material Substances 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 238000005245 sintering Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- IXSZQYVWNJNRAL-UHFFFAOYSA-N etoxazole Chemical compound CCOC1=CC(C(C)(C)C)=CC=C1C1N=C(C=2C(=CC=CC=2F)F)OC1 IXSZQYVWNJNRAL-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
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- Ceramic Products (AREA)
Abstract
The invention discloses a preparation method of a silicon carbide ceramic precision device and belongs to the field of ceramic precision devices. The preparation method comprises steps as follows: Step 1, silicon carbide powder, a processing aid and nano carbon powder are mixed in proportion; Step 2, the powder and a binder are mixed evenly, subjected to mixing in an internal mixer and cut for granulation after being cooled; Step 3, a mold required by injection molding is produced; Step 4, a liquid is degreased, and a blank is soaked in the liquid or heated and decomposed for removal of the low-melting-point binder, so that the blank has capillary pores; Step 5, heating and degreasing are performed, and the blank is placed in a vacuum furnace and slowly heated after vacuum pumping; Step 6, a sample is taken out after being cooled and is ground and processed as required. With the adoption of the preparation method, the production efficiency is improved, and the application field of silicon carbide is greatly expanded.
Description
Technical field
The present invention relates to a kind of preparation method of ceramic component, particularly relate to a kind of preparation method of silicon carbide ceramics accurate device.
Background technology
Due to thyrite there is high bending strength, excellent oxidation-resistance, good erosion resistance, high to resistance to wear, low frictional coefficient, also there is low density and higher hot strength etc. simultaneously, and significantly its mechanical behavior under high temperature is best in stupalith always, thus the development of silicon carbide ceramics is very fast.Popularized rapidly in the nearly every field during the last ten years in national economy especially, Application Areas expands increasingly.Need at high temperature in aerospace, nuclear industry, petroleum industry, chemical industry, light and textile industries, foodstuffs industry etc., at a high speed, corrosion-resistant, vacuum, electrical isolation, without under the particular surroundings such as magnetic, metal to-metal contact, to be familiar with gradually by people as its indispensable substitution effect of a kind of new ceramic material.
In addition; due to thyrite in use; free silica and free carbon content few; in the industries such as fine chemistry industry, food, medicine; especially in requiring that high cleanliness, super clean fluid are carried; provide very crucial protection and guarantee effect to the purity of environment and product, along with the enhancing of people's environmental consciousness, thyrite will be used widely in the chemical field whole industry.
But the main machining method of traditional silicon carbide ceramics is but that normal pressure-sintered, reaction sintering, recrystallization sinter three kinds, and forming method mainly adopts die casting, extrudes, builds, its product produced is general comparatively large and structure is simple.Wherein, working method device in the course of processing of silicon carbide reaction-sintered does not shrink substantially, and Heating temperature is low, but is the free silica containing about 5% in product, and its wear resistance, erosion resistance are poor; The working method processing device purity of recrystallization sintering is high, intensity large, but to be density little, porous and Heating temperature is high for its finished product; The working method product purity of constant pressure sintering silicon carbide is high, and density is large, wear resistance, good corrosion resistance, but its heat shrink in the course of processing, and shape is difficult to control.Simultaneously, little for volume, baroque element manufacturing, above-mentioned preparation method generally adopts the method for powder process, dry-pressing, sintering, due to the general not superelevation 5%(weight of the binding agent in the blank after dry-pressing), the toughness of blank is lower, in sintering process, organic decomposition discharge causes easily splitting, and yield rate is low, therefore seriously limits the application of silicon carbide ceramics.Present method adopts the method for plastic shaping, and yield rate is high, and precision controlling is accurate, and preparation speed is fast, is suitable for that volume is little, the batch production of silicon carbide ceramics device that complex structure, accuracy requirement are high, and cost can significantly reduce.
Summary of the invention
In order to overcome above shortcoming, the invention provides a kind of preparation method of new silicon carbide ceramics accurate device, concrete technical scheme is:
A preparation method for silicon carbide ceramics accurate device, comprises following steps: step one, silicon carbide powder, norbide, nano-carbon powder are mixed according to the weight ratio of 100:0.5 ~ 1.0:2.0 ~ 4.0; Step 2, above-mentioned powder to be mixed with binding agent, mixing on Banbury mixer, cut granulation after cooling; Step 3, make injection molding die needed; Step 4, liquid degreasing, by blank through soaked with liquid or thermal degradation remove low melting point portion of binder, make it to become the blank with pore, and dystectic binding agent wherein can keep the shape of blank; Step 5, add thermal debinding, blank is put into vacuum oven, vacuumizes rear slow heating, in heat-processed, dystectic binder decomposed, and decomposition gas is discharged along pore, thus ensured that blank does not ftracture, along with the continuous rising of temperature, in blank, binding agent all decomposes, and decomposition gas is with vacuumizing discharge, and silicon carbide remaining in blank starts to grow closely knit, density can reach 3.00 ~ 3.15 grams/cc, and volume is respectively to contraction 16 ~ 21%; Sample is taken out, processing of polishing as required after step 6, cooling.
Optimally, the silicon carbide powder particle diameter described in step one is 0.3 ~ 0.8 micron, and purity is 98 ~ 99%, and the purity of norbide is greater than 97%, and particle diameter is 325 orders.
Optimally, binding agent described in step 2 is that polyethylene, polypropylene, EVA, polyvinyl alcohol, polymethylmethacrylate, stearic acid, polyethylene, paraffin etc. are two or more arbitrarily.
Optimally, in step 2 powder and binding agent according to the volume ratio Homogeneous phase mixing of 1 ~ 0.5:1.5.
Optimally, in step 2, the temperature on Banbury mixer is 130 ~ 200 DEG C, and mixing time is more than 30 minutes.
Optimally, the heat-up rate heated in step 5 is 5 DEG C/m, and is respectively incubated 1 hour at 300 DEG C, 500 DEG C, 700 DEG C, is incubated 3 hours when finally rising to 2150 DEG C.
The present invention adopts particle diameter to be the silicon carbide of 500 nanometers, adds norbide, nano-sized carbon as process preparation, fully mixing mixed after add plastic cement and carry out mixing, granulate feeding; Design mould on request, injection molding; Through liquid degreasing, high temperature degreasing, high-temperature molding, processes qualified product.Because injection molding mould can be designed to complicated shape as requested, therefore utilize the method can the complex-shaped accurate silicon carbide ceramics device of machine-shaping, density after sintering can reach silicon carbide theoretical density 90-98%, improve production efficiency, greatly expand the Application Areas of silicon carbide.Therefore, the present invention reduces cost for producing little, the baroque device of volume.
Embodiment
embodiment one:
A kind of preparation method of silicon carbide ceramics accurate device, it is characterized in that: comprise following steps: step one, be 0.3 micron by particle diameter, purity is 98 ~ 99% silicon carbide powders, purity is greater than 97%, and particle diameter is 325 object processing aid norbides, nano-carbon powder mixes by the weight ratio of 100:0.5:2.0; Step 2, above-mentioned powder to be mixed with the volume ratio of binding agent according to 1:1.5, mixing on Banbury mixer, cut granulation after cooling, wherein binding agent be polyethylene, polypropylene, EVA, temperature on Banbury mixer is 200 DEG C, and mixing time is more than 30 minutes; Step 3, make injection molding die needed; Step 4, liquid degreasing, by blank through soaked with liquid or thermal degradation remove low melting point portion of binder, make it to become the blank with pore; Step 5, add thermal debinding, blank is put into vacuum oven, vacuumizes rear slow heating, wherein, the heat-up rate of heating is 5 DEG C/m, and 300 DEG C, 500 DEG C, 700 DEG C respectively insulations 1 hour, is incubated 3 hours when finally rising to 2150 DEG C; Sample is taken out, processing of polishing as required after step 6, cooling.
embodiment two:
A kind of preparation method of silicon carbide ceramics accurate device, it is characterized in that: comprise following steps: step one, be 0.5 micron by particle diameter, purity is 98 ~ 99% silicon carbide powders, purity is greater than 97%, and particle diameter is 325 object processing aid norbides, nano-carbon powder mixes by the weight ratio of 100:1.0:4.0; Step 2, above-mentioned powder to be mixed with the volume ratio of binding agent according to 0.5:1.5, mixing on Banbury mixer, cut granulation after cooling, wherein binding agent is polymethylmethacrylate, stearic acid, polyethylene, paraffin, temperature on Banbury mixer is 130 DEG C, and mixing time is more than 30 minutes; Step 3, make injection molding die needed; Step 4, liquid degreasing, by blank through soaked with liquid or thermal degradation remove low melting point portion of binder, make it to become the blank with pore; Step 5, add thermal debinding, blank is put into vacuum oven, vacuumizes rear slow heating, wherein, the heat-up rate of heating is 5 DEG C/m, and 300 DEG C, 500 DEG C, 700 DEG C respectively insulations 1 hour, is incubated 3 hours when finally rising to 2150 DEG C; Sample is taken out, processing of polishing as required after step 6, cooling.
embodiment three:
A kind of preparation method of silicon carbide ceramics accurate device, it is characterized in that: comprise following steps: step one, be 0.8 micron by particle diameter, purity is 98 ~ 99% silicon carbide powders, purity is greater than 97%, and particle diameter is that 325 object processing aid norbides, nano-carbon powder are by 100:0.8:3(weight ratio) mixing; Step 2, above-mentioned powder to be mixed with the volume ratio of binding agent according to 0.75:1.5, mixing on Banbury mixer, granulation is cut after cooling, wherein binding agent be EVA, polyvinyl alcohol, polymethylmethacrylate, stearic acid, temperature on Banbury mixer is 180 DEG C, and mixing time is more than 30 minutes; Step 3, make injection molding die needed; Step 4, liquid degreasing, by blank through soaked with liquid or thermal degradation remove low melting point portion of binder, make it to become the blank with pore; Step 5, add thermal debinding, blank is put into vacuum oven, vacuumizes rear slow heating, wherein, the heat-up rate of heating is 5 DEG C/m, and 300 DEG C, 500 DEG C, 700 DEG C respectively insulations 1 hour, is incubated 3 hours when finally rising to 2150 DEG C; Sample is taken out, processing of polishing as required after step 6, cooling.
Claims (6)
1. a preparation method for silicon carbide ceramics accurate device, is characterized in that: comprise following steps: step one, silicon carbide powder, norbide, nano-carbon powder are mixed according to the weight ratio of 100:0.5 ~ 1.0:2.0 ~ 4.0; Step 2, above-mentioned powder to be mixed with binding agent, mixing on Banbury mixer, cut granulation after cooling;
Step 3, make injection molding die needed;
Step 4, liquid degreasing, by blank through soaked with liquid or thermal degradation remove low melting point portion of binder;
Step 5, add thermal debinding, blank is put into vacuum oven, vacuumizes rear slow heating; Sample is taken out, processing of polishing as required after step 6, cooling.
2. the preparation method of a kind of silicon carbide ceramics accurate device according to claim 1, it is characterized in that: the silicon carbide powder particle diameter described in step one is 0.3 ~ 0.8 micron, norbide purity is 98 ~ 99%, processing aid is that purity is greater than 97%, particle diameter is 325 orders, by silicon carbide powder, norbide and nano-carbon powder.
3. the preparation method of a kind of silicon carbide ceramics accurate device according to claim 1, is characterized in that: binding agent described in step 2 is that polyethylene, polypropylene, EVA, polyvinyl alcohol, polymethylmethacrylate, stearic acid, polyethylene, paraffin etc. are two or more arbitrarily.
4. the preparation method of a kind of silicon carbide ceramics accurate device according to claim 1, is characterized in that: in step 2, powder and binding agent are according to the volume ratio Homogeneous phase mixing of 1 ~ 0.5:1.5.
5. the preparation method of a kind of silicon carbide ceramics accurate device according to claim 1, is characterized in that: in step 2, and the temperature on Banbury mixer is 130 ~ 200 DEG C, and mixing time is more than 30 minutes.
6. the preparation method of a kind of silicon carbide ceramics accurate device according to claim 1, is characterized in that: the heat-up rate heated in step 5 is 5 DEG C/m, and is respectively incubated 1 hour at 300 DEG C, 500 DEG C, 700 DEG C, is incubated 3 hours when finally rising to 2150 DEG C.
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| CN201510493542.1A CN105060896A (en) | 2015-08-13 | 2015-08-13 | Preparation method of silicon carbide ceramic precision device |
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| CN201510493542.1A CN105060896A (en) | 2015-08-13 | 2015-08-13 | Preparation method of silicon carbide ceramic precision device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105669206A (en) * | 2015-12-31 | 2016-06-15 | 南方科技大学 | Porous silicon carbide ceramic and preparation method thereof |
| CN106431411A (en) * | 2016-07-06 | 2017-02-22 | 南通苏源化纤有限公司 | T6-type carbon nano-modified silicon carbide ceramic-based composite material |
| CN109467436A (en) * | 2018-12-19 | 2019-03-15 | 中国兵器科学研究院宁波分院 | A kind of boron carbide ceramics ball and preparation method thereof |
| CN109776094A (en) * | 2017-11-10 | 2019-05-21 | 中国建筑材料科学研究总院有限公司 | Ultraprecise ceramic guide rail and preparation method thereof |
| CN116854478A (en) * | 2023-07-20 | 2023-10-10 | 四川硅旺新材料科技有限公司 | Preparation method of reaction sintering silicon carbide |
-
2015
- 2015-08-13 CN CN201510493542.1A patent/CN105060896A/en active Pending
Non-Patent Citations (2)
| Title |
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| 张勇等: "注射成型制备碳化硅陶瓷材料", 《稀有金属材料与工程》 * |
| 张勇等: "注射成形制备碳化硅异形件的工艺研究", 《粉末冶金工业》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105669206A (en) * | 2015-12-31 | 2016-06-15 | 南方科技大学 | Porous silicon carbide ceramic and preparation method thereof |
| CN105669206B (en) * | 2015-12-31 | 2018-10-23 | 南方科技大学 | porous silicon carbide ceramic and preparation method thereof |
| CN106431411A (en) * | 2016-07-06 | 2017-02-22 | 南通苏源化纤有限公司 | T6-type carbon nano-modified silicon carbide ceramic-based composite material |
| CN109776094A (en) * | 2017-11-10 | 2019-05-21 | 中国建筑材料科学研究总院有限公司 | Ultraprecise ceramic guide rail and preparation method thereof |
| CN109467436A (en) * | 2018-12-19 | 2019-03-15 | 中国兵器科学研究院宁波分院 | A kind of boron carbide ceramics ball and preparation method thereof |
| CN109467436B (en) * | 2018-12-19 | 2022-03-11 | 中国兵器科学研究院宁波分院 | Boron carbide ceramic ball and preparation method thereof |
| CN116854478A (en) * | 2023-07-20 | 2023-10-10 | 四川硅旺新材料科技有限公司 | Preparation method of reaction sintering silicon carbide |
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