CN105049032B - 氮化镓基低漏电流悬臂梁开关场效应晶体管或非门 - Google Patents
氮化镓基低漏电流悬臂梁开关场效应晶体管或非门 Download PDFInfo
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- CN105049032B CN105049032B CN201510379116.5A CN201510379116A CN105049032B CN 105049032 B CN105049032 B CN 105049032B CN 201510379116 A CN201510379116 A CN 201510379116A CN 105049032 B CN105049032 B CN 105049032B
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- mesfet
- effect transistor
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- 230000005669 field effect Effects 0.000 title claims abstract description 37
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
Abstract
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A | B | Y |
0 | 0 | 1 |
1 | 0 | 0 |
0 | 1 | 0 |
1 | 1 | 0 |
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CN201510379116.5A CN105049032B (zh) | 2015-07-01 | 2015-07-01 | 氮化镓基低漏电流悬臂梁开关场效应晶体管或非门 |
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CN201510379116.5A CN105049032B (zh) | 2015-07-01 | 2015-07-01 | 氮化镓基低漏电流悬臂梁开关场效应晶体管或非门 |
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CN105049032A CN105049032A (zh) | 2015-11-11 |
CN105049032B true CN105049032B (zh) | 2017-11-28 |
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CN201510379116.5A Expired - Fee Related CN105049032B (zh) | 2015-07-01 | 2015-07-01 | 氮化镓基低漏电流悬臂梁开关场效应晶体管或非门 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102735926A (zh) * | 2012-06-20 | 2012-10-17 | 东南大学 | 基于微机械砷化镓基固支梁的频率检测器及检测方法 |
CN103364636A (zh) * | 2013-06-19 | 2013-10-23 | 东南大学 | 基于微机械悬臂梁电容式功率传感器的相位检测器及制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8635765B2 (en) * | 2011-06-15 | 2014-01-28 | International Business Machines Corporation | Method of forming micro-electrical-mechanical structure (MEMS) |
WO2014007890A2 (en) * | 2012-03-29 | 2014-01-09 | California Institute Of Technology | Sensor probe for bio-sensing and chemical-sensing applications |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102735926A (zh) * | 2012-06-20 | 2012-10-17 | 东南大学 | 基于微机械砷化镓基固支梁的频率检测器及检测方法 |
CN103364636A (zh) * | 2013-06-19 | 2013-10-23 | 东南大学 | 基于微机械悬臂梁电容式功率传感器的相位检测器及制备方法 |
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