CN105048895B - A kind of single-phase driving circuit structure based on MEMS sensor - Google Patents
A kind of single-phase driving circuit structure based on MEMS sensor Download PDFInfo
- Publication number
- CN105048895B CN105048895B CN201510389435.4A CN201510389435A CN105048895B CN 105048895 B CN105048895 B CN 105048895B CN 201510389435 A CN201510389435 A CN 201510389435A CN 105048895 B CN105048895 B CN 105048895B
- Authority
- CN
- China
- Prior art keywords
- output end
- gate
- input
- connects
- input port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
A kind of single-phase driving circuit structure based on MEMS sensor, the present invention relates to integrated circuit fields, it aims to solve the problem that existing motor has a low degree of intelligence, irrational driving circuit structure, low reliability and does not possess the technical problems such as extreme environment tolerance.The MEMS sensing units that the invention circuit structure feature is sequentially connected：Target sensing data is obtained, sensing data is changed as clock signal and sends control clock；Pulse timing modulating unit：The control clock sent according to MEMS sensing units, carries out pulsewidth modulation, and horizontal pulse Time-delayed Feedback of going forward side by side regulation and level modulated signals are sent；Monophase machine unit：According to pulse timing modulating unit level modulated signals, obtain orderly drive pattern and realize rotation in order；Pulse timing modulating unit is to MEMS sensing unit feedback data；Monophase machine unit feeds back counter electromotive force to pulse timing modulating unit.The present invention is used for motor intelligent.
Description
Technical field
The present invention relates to integrated circuit fields, and in particular to a kind of single-phase driving circuit knot based on MEMS sensor
Structure.
Background technology
Existing motor, lacks integrated control device or control device degree of intelligence is not high, it is necessary to a large amount of manual operations, nothing
Method is automatically performed each generic operation；The modulation of pulse, delay adjustment circuit unreasonable structure, cause double-field effect tube voltage regulation electricity
There is overlapping conducting voltage scope in road, further influence drive circuit；Motor integrates position sensor, position sensor
Reliability is low, is vulnerable to the influence of the extraneous factors such as environment temperature, pressure, reduce further the reliability of motor.
The content of the invention
For above-mentioned prior art, present invention aims at provide a kind of single-phase driving circuit based on MEMS sensor
Structure, it aims to solve the problem that existing motor has a low degree of intelligence, irrational driving circuit structure, low reliability and does not possess extreme
The technical problems such as environmental resistance ability.
To reach above-mentioned purpose, the technical solution adopted by the present invention is as follows：
A kind of single-phase driving circuit structure based on MEMS sensor, including the MEMS sensing units being sequentially connected：Obtain
Target sensing data is taken, sensing data is changed as clock signal and sends control clock；Pulse timing modulating unit：According to MEMS
The control clock that sensing unit is sent, carries out pulsewidth modulation, and horizontal pulse Time-delayed Feedback of going forward side by side regulation and level modulated signals are sent；
Monophase machine unit：According to pulse timing modulating unit level modulated signals, obtain orderly drive pattern and realize orderly turn
It is dynamic；Pulse timing modulating unit is to MEMS sensing unit feedback data；Monophase machine unit feeds back to pulse timing modulating unit
Counter electromotive force.
In such scheme, described MEMS sensing units, including export for clock, data processing and signal control
FPGA：It is provided with MEMS sensor interface；First analog-digital converter：Output port connects FPGA, receives FPGA control commands, to
FPGA output digit signals；MEMS sensor：Clock input interface connects FPGA MEMS sensor interface, output end connection
The input of first analog-digital converter, FPGA clock sequence is received, sensing data is sent to the first analog-digital converter.MEMS is passed
Sensor has small volume, in light weight, low in energy consumption, reliability is high, high sensitivity, is easily integrated and resistance to harsh environments etc. are excellent
Gesture.Extraneous echo signal is extracted, is matched with FPGA preset references, identification function can be completed；Multiple MEMS sensor combinations, can make
The different characteristic for obtaining same target obtains fully identification checking, lifts accuracy；After processing data, middle control is sent to the next circuit
Order；Need to be that after FPGA completes programming, sequence of maneuvers self-service can be completed, and the external world can read phase by host computer with proposing
Data are closed, embody motor intelligent.
In such scheme, described pulse timing modulating unit, including modulation pulse generator：Input connection FPGA's
Output terminal of clock, receive FPGA control clocks；First phase inverter：Input connects the output end of modulation pulse generator；First
Programmable delayer：Input connects the output end of the first phase inverter；Second phase inverter：Input connects the first programmable delay
The output end of device；First FET：Grid connects the output end of the second phase inverter, and source electrode is connected to inductance；Inductance one end is
High_V；For eliminating the on-off circuit of judgement delay：It is connected with the output end of modulation pulse generator, may be programmed and prolong with first
When device output end connection；Second FET:Grid connecting valve circuit, the source electrode of drain electrode the first FET of connection；Xiao
Special base synchronous rectification diode：Positive pole, negative pole connect the source electrode of the second field-effect diode, drain electrode respectively；Schottky is synchronously whole
Stream diode cathode is Low_V.The control clock sent according to MEMS sensing units, realize pulsewidth modulation, pulse delay feedback
The function that regulation and level modulated signals are sent.Dramatically increase the reaction speed of whole circuit.
In such scheme, described on-off circuit, including cut-off circuit, turning circuit, in addition to rest-set flip-flop：Q ends connect
Connect the second FET Q2 grid.
In such scheme, described cut-off circuit, including buffer register：Input connects the first programmable delayer
Output end；First appreciation counter；Clock end connects the output end of buffer register；First and door：Input port connects High_
V and programmed sequence；First nor gate：Input port is connected with the output end of first and door, and output end connection first, which is appreciated, to be counted
The counting end of device；3rd phase inverter：Input is default end；First OR gate：Input port connects the output end of the 3rd phase inverter
With the output end of buffer register；Second nor gate：Input port is connected with the output end and first nor gate of the first OR gate
Output end, output end are connected to the input port of the first nor gate；Second programmable delayer：Activate counting end A connections first
Counting end-the Q of appreciation counter, the output end ID for end D the first programmable delayers of connection that are delayed；4th phase inverter：Input
Connect the output end Y of the second programmable delayer；3rd nor gate：Input port connect respectively the 4th phase inverter input and
Output end；Second and door；Second OR gate：Input port be connected with the 3rd nor gate output end and second with the output end of door；
5th phase inverter：Input and output end connection second and the input port of door；The output end connection rest-set flip-flop of second OR gate
R ends.After cut-off circuit activation, Schottky synchronous rectification diode D1 will end, and thoroughly eliminate double-field effect pipe overlapping conducting
Voltage range and waveform drift, i.e., now only have FET Q2 conducting.Dramatically increase the reaction speed of whole circuit.
In such scheme, described turning circuit, including the second appreciation counter：Clock end connects modulation pulse generator
Output end；3rd OR gate：Input port connects the output end and High_V of the 3rd phase inverter；Four nor gate：Input port
It is connected with the output end of the 3rd OR gate；5th nor gate：Input port is connected with the output end of four nor gate, output end connection
The counting end UP of second appreciation counter；3rd and door：Input port is connected with the output end of buffer register, output end connection
To the input port of the 5th nor gate；4th and door：Input port is provided with monitoring point, and it is defeated with door that output end is connected to the 3rd
Inbound port；Reference power supply：Plus earth；Comparator：High level end connect reference power supply negative pole, output end be connected to the 4th with
The input port of door；3rd programmable delayer：The Q ends of counting end A connection the second appreciation counters are activated, delay end connects the
The output end of one programmable delayer；Hex inverter：Input connects the output end of the 3rd programmable delayer；5th with
Door：Input port connects the output end and input of hex inverter, and output end connects the S ends of rest-set flip-flop.Turning circuit swashs
After work, Schottky synchronous rectification diode D1 will be turned on, FET Q1 conductings, FET Q2 short circuits；Establish counter electromotive force
Feed back basic loop.Dramatically increase the reaction speed of whole circuit.
In such scheme, described monophase machine unit, including drive circuit：1_H ends connect High_V, Low_V connections
Low_V；Motor：Interface 1 connects the output interface OUT1 of drive circuit；Second analog-digital converter：Input connects monophase machine
Interface 1, output end connect comparator low level end.Motor does not need position sensor, passes through established backfeed loop
Pass counter electromotive force back pulse timing modulating unit, complete self-adjusting operation, strengthen motor extreme environment tolerance, reduce outer
Influenceed caused by boundary, be obviously improved motor reliability.
Brief description of the drawings
Fig. 1 is circuit module figure of the present invention；
Fig. 2 is physical circuit figure of the present invention；
Fig. 3 is that counter electromotive force of the present invention replaces position sensor embodiment motor phase oscillogram；
In figure：100-MEMS sensing units, 200- pulse timing modulating units, 300- monophase machine units, 4- modulation arteries and veins
Rush generator, 5,12,23,28,30,24- phase inverters, 6,21,22- programmable delayers, 7- buffer registers, 8,16,17,
25th, 29- and door, 9,10,14,18,27- nor gates, 11,13,26- OR gates, 31-RS triggers, Q1, Q2- FET, D1,
D2- Schottky synchronous rectification diodes, the default ends of PRESET-, Checkpoint- monitoring points, High_V- high level point, Low_
V- low levels point, MEMS SENSOR- micro-electro-mechanical sensors, FPGA- FPGAs, MOTOR- motors, PDC-
Drive circuit, 31,32- analog-digital converters, CI- network interfaces, UPPER- host computers, BEMF- counter electromotive force.
Embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine in any way.
The present invention will be further described below in conjunction with the accompanying drawings：
Fig. 1 is circuit module figure of the present invention, a kind of single-phase driving circuit structure based on MEMS sensor, including successively
The MEMS sensing units 100 of connection：Target sensing data is obtained, sensing data is changed as clock signal and sends control clock
Clock；Pulse timing modulating unit 200：The control clock Clock sent according to MEMS sensing units 100, carry out pulsewidth tune
System, horizontal pulse Time-delayed Feedback of going forward side by side regulation and level modulated signals are sent；Monophase machine unit 300：Modulated according to pulse timing
The level modulated signals of unit 200, obtain orderly drive pattern and realize rotation in order；Pulse timing modulating unit 200 to
The feedback data Data of MEMS sensing units 100；Monophase machine unit 300 feeds back counter electromotive force to pulse timing modulating unit 200
BEMF。
Fig. 2 is physical circuit figure of the present invention, in such scheme, described MEMS sensing units 100, including it is defeated for clock
Go out, the FPGA of data processing and signal control：It is provided with MEMS sensor interface；First analog-digital converter 31：Output port connects
FPGA is met, FPGA control commands are received, to FPGA output digit signals；MEMS sensor：Clock input interface connects FPGA
MEMS sensor interface, output end connects the input of the first analog-digital converter 31, FPGA clock sequence received, to first
Analog-digital converter 31 sends sensing data.
Described pulse timing modulating unit 200, including modulation pulse generator 4：Input connection FPGA clock is defeated
Go out end, receive FPGA control clocks Clock；First phase inverter 5：Input connects the output end of modulation pulse generator 4；First
Programmable delayer 6：Input connects the output end of the first phase inverter 5；Second phase inverter 24：Input connection first is programmable
The output end of delayer 6；First FET Q1：Grid connects the output end of the second phase inverter 24, and source electrode is connected to inductance L1；Electricity
It is High_V to feel L1 one end；For eliminating the on-off circuit of judgement delay：It is connected with the output end of modulation pulse generator 4, with
The output end connection of first programmable delayer 6；Second FET Q2:Grid connecting valve circuit, drain electrode connection first
Effect pipe Q1 source electrode；Schottky synchronous rectification diode D1：Positive pole, negative pole connect the source of the second field-effect diode respectively
Pole, drain electrode；Schottky synchronous rectification diode D1 just extremely Low_V.
Described on-off circuit, including cut-off circuit, turning circuit, in addition to rest-set flip-flop 31：Q ends connect second effect
Should pipe Q2 grid.
Described cut-off circuit, including buffer register 7：Input connects the output end ID of the first programmable delayer 6；
First appreciation counter 19；The output end of clock end CLK connections buffer register 7；First with door 8：Input port connects High_
V and programmed sequence Pro.bit；First nor gate 9：Input port is connected with the output end of first and door 8, output end connection first
The counting end UP of appreciation counter 19；3rd phase inverter 12：Input is default end Preset；First OR gate 11：Input port
Connect the output end of the 3rd phase inverter 12 and the output end of buffer register 7；Second nor gate 10：Input port is connected with first
The output end of the output end of OR gate 11 and the first nor gate 9, output end are connected to the input port of the first nor gate；Second can compile
Journey delayer 21：Counting end-the Q of counting end A the first appreciations of connection counter 19 is activated, delay end D connections first are programmable to prolong
When device output end ID；4th phase inverter 28：Input connects the output end Y of the second programmable delayer 21；3rd nor gate
27：Input port connects the input and output end of the 4th phase inverter 28 respectively；Second with door 25；Second OR gate 26：Input
Mouth be connected with the 3rd nor gate 27 output end and second with the output end of door 25；5th phase inverter 23：Input and output end
Connection second and the input port of door 25；The R ends of the output end connection rest-set flip-flop 31 of second OR gate 26.
Described turning circuit, including the second appreciation counter 20：Clock end CLK connections modulation pulse generator 4 it is defeated
Go out end；3rd OR gate 13：Input port connects the output end and High_V of the 3rd phase inverter 12；Four nor gate 14：Input
Mouth is connected with the output end of the 3rd OR gate 13；5th nor gate 18：Input port is connected with the output end of four nor gate 14, defeated
Go out the counting end UP of the second appreciation counter 20 of end connection；3rd with door 17：Input port is connected with the output of buffer register 7
End, output end are connected to the input port of the 5th nor gate 18；4th with door 16：Input port is provided with monitoring point
Checkpoint, output end are connected to the input port of the 3rd and door 17；Reference power supply Ref_1：Plus earth；Comparator 15：
High level end connection reference power supply Ref_1 negative pole, output end are connected to the input port of the 4th and door 16；3rd programmable prolongs
When device 22：The Q ends of counting end A the second appreciations of connection counter 20 are activated, be delayed the defeated of the first programmable delayer of end D connections 6
Go out to hold ID；Hex inverter 30：Input connects the output end Y of the 3rd programmable delayer 22；5th with door 29：Input port
The output end and input of hex inverter 30 are connected, output end connects the S ends of rest-set flip-flop 31.
Described monophase machine unit 300, including drive circuit PDC：1_H ends connect High_V, Low_V connections Low_V；
Monophase machine MOTOR：Interface 1 connects the output interface OUT1 of drive circuit；Second analog-digital converter 32：Input connection is single-phase
Motor MOTOR interface 1, output end connect the low level end of comparator 15.
Fig. 3 is that counter electromotive force of the present invention replaces position sensor embodiment motor phase oscillogram, and each phase is compared with benchmark
The transfer delay phase of power supply Ref_1 voltages is π/6, there is provided implements zero passage detection condition.When counter electromotive force BEMF changes
When, the record time interval of pulse timing modulating unit 200, which is laid equal stress on, sets counter；It is recorded when the timing of counter is more than or equal to
Counter electromotive force BEMF time intervals, will start phase place change timing, pulse timing modulating unit 200 by adjust export, to enter
One step motor rotates.
Embodiment 1,
If an identified target, sensing data is sent after MEMS sensor identification and gives FPGA processing, FPGA is to the next electricity
Readable information is uploaded by network interface CI while road sends order and gives host computer UPPER, it is upper in specific FPGA applications
Machine can also send instruction to FPGA；When modulation pulse generator 4 receives the order that FPGA is sent, anti-phase modulation arteries and veins is exported
Rush and obtain signal to the first programmable delayer 6, the first programmable delayer 6 and preload, export the modulated signal of a delay, lead to
After crossing on-off circuit, Schottky synchronous rectification diode D1 always verifies signal waveform trailing edge in advance, so as to be previously-completed it is high,
Low transition, double-field effect pipe Q1, Q2 overlapping interval are eliminated, give drive circuit PDC so as to accurately send level signal, drive
Dynamic circuit PDC obtains orderly drive pattern, and further motor rotates in order.
In AEROSPACE APPLICATION, embodiment 2,
In space shuttle and space station docking operation, the docking port of space station is as MEMS sensor specific identification mesh
Mark, from MEMS laser sensors, with unification high reflection light laser, pass through " identification-rotation-feedback-adjustment-identification ... "
Process, it more can accurately complete space shuttle and be docked with space station.
In Military Application, embodiment 3,
Infrared laser can be coordinated to make from weapon mounting seat is aimed at, in implementation, from MEMS infrared sensors, from strike
Weapon（Such as rocket launcher RPG, armour-piercing machine gun）On the base for being rotated control by motor, when hostile low flyer
Or near, middle-range ground target is appeared in MEMS infrared sensor investigative ranges, host computer sends strike instruction to FPGA, motor
Rotated with target movement, realize that locking-type persistently hits marked target.In specific restricted area, target can be pre-set
Identification feature, then host computer is not needed to issue an order, as long as one appears in MEMS sensor investigative range, weapon is hit at once
Target, electromechanical locks fixed pattern rotation so that weapon is persistently struck target.
In civilian applications, embodiment 4,
Stage lighting is arranged on motor, the main follow spot light of stage can be made, in implementation, the table followed spot required for mark in advance
The person of drilling, performing artist are able to continue to be followed spot, and are not required to the main follow spot light of manual control.
Beneficial effect of the present invention：Motor rate of straining is fast, and it is wide to practice scope, can intelligently work independently, and can tolerate
Extreme environment and reliability height.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Belong to those skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in, all should
It is included within the scope of the present invention.
Claims (5)
1. a kind of single-phase driving circuit structure based on MEMS sensor, it is characterised in that including what is be sequentially connected
MEMS sensing units（100）：Target sensing data is obtained, sensing data is changed as clock signal and sends control clock
Clock；
Pulse timing modulating unit（200）：According to MEMS sensing units（100）The control clock Clock sent, carry out pulsewidth tune
System, horizontal pulse Time-delayed Feedback of going forward side by side regulation and level modulated signals are sent；
Monophase machine unit（300）：According to pulse timing modulating unit（200）Level modulated signals, obtain orderly driving mould
Formula simultaneously realizes rotation in order；
Pulse timing modulating unit（200）To MEMS sensing units（100）Feedback data Data；Monophase machine unit（300）To
Pulse timing modulating unit（200）Feed back counter electromotive force BEMF；
Described MEMS sensing units（100）, including
FPGA for clock output, data processing and signal control：It is provided with MEMS sensor interface；
First analog-digital converter（33）：Output port connects FPGA, FPGA control commands is received, to FPGA output digit signals；
MEMS sensor：Clock input interface connects FPGA MEMS sensor interface, and output end connects the first analog-to-digital conversion
Device（33）Input, FPGA clock sequence is received, to the first analog-digital converter（33）Send sensing data；
Described pulse timing modulating unit（200）, including
Modulation pulse generator（4）：Input connects FPGA output terminal of clock, receives FPGA control clocks Clock；
First phase inverter（5）：Input connects modulation pulse generator（4）Output end；
First programmable delayer（6）：Input connects the first phase inverter（5）Output end；
Second phase inverter（24）：Input connects the first programmable delayer（6）Output end；
First FET Q1：Grid connects the second phase inverter（24）Output end, source electrode is connected to inductance L1；
Inductance L1 one end is High_V, and source electrode is connected with High_V opposite end；
For eliminating the on-off circuit of judgement delay：With modulation pulse generator（4）Output end connection, programmable prolong with first
When device（6）Output end connection；
Second FET Q2:Grid connecting valve circuit, the first FET Q1 of drain electrode connection source electrode；
Schottky synchronous rectification diode D1：Its positive pole connects the source electrode of the second field-effect diode and its negative pole connection second
The drain electrode of field-effect diode；
Schottky synchronous rectification diode D1 just extremely Low_V.
A kind of 2. single-phase driving circuit structure based on MEMS sensor according to claim 1, it is characterised in that institute
The on-off circuit stated, including cut-off circuit, turning circuit, in addition to rest-set flip-flop（31）：Q ends connect the second FET Q2's
Grid.
A kind of 3. single-phase driving circuit structure based on MEMS sensor according to claim 2, it is characterised in that institute
Cut-off circuit is stated, including
Buffer register（7）：Input connects the first programmable delayer（6）Output end ID；
First appreciation counter（19）；Clock end CLK connection buffer registers（7）Output end；
First and door（8）：Input port connects High_V and programmed sequence Pro.bit；
First nor gate（9）：Input port is connected with first and door（8）Output end, output end connect the first appreciation counter
（19）Counting end UP；
3rd phase inverter（12）：Input is default end Preset；
First OR gate (11)：Input port connects the 3rd phase inverter（12）Output end and buffer register（7）Output end；
Second nor gate（10）：Input port is connected with the first OR gate（11）Output end and the first nor gate（9）Output end,
Output end is connected to the input port of the first nor gate；
Second programmable delayer（21）：Activate counting end A connection the first appreciation counters（19）Counting end-Q, be delayed end D
Connect the output end ID of the first programmable delayer；
4th phase inverter（28）：Input connects the second programmable delayer（21）Output end Y；
3rd nor gate（27）：Input port connects the 4th phase inverter respectively（28）Input and output end；
Second and door（25）；
Second OR gate（26）：Input port is connected with the 3rd nor gate（27）Output end and second and door（25）Output end；
5th phase inverter（23）：Input and output end connection second and door（25）Input port；
Second OR gate（26）Output end connection rest-set flip-flop（31）R ends.
A kind of 4. single-phase driving circuit structure based on MEMS sensor according to claim 3, it is characterised in that institute
Turning circuit is stated, including
Second appreciation counter（20）：Clock end CLK connection modulation pulse generators（4）Output end；
3rd OR gate（13）：Input port connects the 3rd phase inverter（12）Output end and High_V；
Four nor gate（14）：Input port is connected with the 3rd OR gate（13）Output end；
5th nor gate（18）：Input port is connected with four nor gate（14）Output end, output end connection second appreciate meter
Number device（20）Counting end UP；
3rd and door（17）：Input port is connected with buffer register（7）Output end, output end is connected to the 5th nor gate
（18）Input port；
4th and door（16）：Input port is provided with monitoring point Checkpoint, and output end is connected to the 3rd and door（17）It is defeated
Inbound port；
Reference power supply Ref_1：Plus earth；
Comparator（15）：High level end connection reference power supply Ref_1 negative pole, output end are connected to the 4th and door（16）Input
Port；
3rd programmable delayer（22）：Activate counting end A connection the second appreciation counters（20）Q ends, delay end D connections the
One programmable delayer（6）Output end ID；
Hex inverter（30）：Input connects the 3rd programmable delayer（22）Output end Y；
5th and door（29）：Input port connects hex inverter（30）Output end and input, output end connection RS triggering
Device（31）S ends.
A kind of 5. single-phase driving circuit structure based on MEMS sensor according to claim 1, it is characterised in that institute
The monophase machine unit stated（300）, including
Drive circuit PDC：1_H ends connect High_V, L_V connections Low_V；
Monophase machine MOTOR：Interface 1 connects drive circuit PDC output interface OUT1；
Second analog-digital converter（32）：Input connection monophase machine MOTOR interface 1, output end connection comparator（15）'s
Low level end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510389435.4A CN105048895B (en) | 2015-07-06 | 2015-07-06 | A kind of single-phase driving circuit structure based on MEMS sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510389435.4A CN105048895B (en) | 2015-07-06 | 2015-07-06 | A kind of single-phase driving circuit structure based on MEMS sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105048895A CN105048895A (en) | 2015-11-11 |
| CN105048895B true CN105048895B (en) | 2018-03-16 |
Family
ID=54455163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510389435.4A Active CN105048895B (en) | 2015-07-06 | 2015-07-06 | A kind of single-phase driving circuit structure based on MEMS sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105048895B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004512800A (en) * | 2000-10-11 | 2004-04-22 | ゼネラル・エレクトリック・カンパニイ | Grouping gate control logic system and method |
| CN202395751U (en) * | 2011-11-01 | 2012-08-22 | 南京鑫轩电子系统工程有限公司 | Digital control circuit for ferrite phase shifter |
| CN203340006U (en) * | 2013-06-14 | 2013-12-11 | 嵊州市中立电子器材有限公司 | A high-speed large-power brushless DC motor |
| CN104101866A (en) * | 2014-08-04 | 2014-10-15 | 成都雷电微力科技有限公司 | Pulse modulating system of radar system |
| CN204928636U (en) * | 2015-07-06 | 2015-12-30 | 成都弘毅天承科技有限公司 | Single -phase drive circuit structure based on many MEMS sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101434047B1 (en) * | 2012-11-26 | 2014-08-25 | 삼성전기주식회사 | Apparatus and method for operating motor |
-
2015
- 2015-07-06 CN CN201510389435.4A patent/CN105048895B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004512800A (en) * | 2000-10-11 | 2004-04-22 | ゼネラル・エレクトリック・カンパニイ | Grouping gate control logic system and method |
| CN202395751U (en) * | 2011-11-01 | 2012-08-22 | 南京鑫轩电子系统工程有限公司 | Digital control circuit for ferrite phase shifter |
| CN203340006U (en) * | 2013-06-14 | 2013-12-11 | 嵊州市中立电子器材有限公司 | A high-speed large-power brushless DC motor |
| CN104101866A (en) * | 2014-08-04 | 2014-10-15 | 成都雷电微力科技有限公司 | Pulse modulating system of radar system |
| CN204928636U (en) * | 2015-07-06 | 2015-12-30 | 成都弘毅天承科技有限公司 | Single -phase drive circuit structure based on many MEMS sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105048895A (en) | 2015-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104079218B (en) | A kind of motor rotor position angle preparation method | |
| CN202385050U (en) | Motion control card based on FPGA (field programmable gate array) | |
| CN105306026B (en) | A kind of double pulse generator of turnable pulse width | |
| CN105706368A (en) | Asynchronous successive approximation resister analog-to-digital converter and an inner clock generator included therein | |
| CN102608396A (en) | Current state judgment and dead-zone compensating method of frequency converter | |
| CN102386916A (en) | Digital pulse width modulator circuit capable of reducing power consumption and chip area | |
| CN102674121A (en) | Control system of lift door motor and control method thereof | |
| CN103984327B (en) | Small digital actuator system based on fuzzy control | |
| CN105048894B (en) | A kind of single-phase driving circuit structure based on single MEMS sensor | |
| CN105007002B (en) | A kind of single-phase driving circuit structure based on single MEMS sensor | |
| CN103760921A (en) | Low-precision multi-sensor fused original point precise positioning system and positioning method | |
| CN103647526B (en) | A kind of PWM locking control circuits | |
| CN105048895B (en) | A kind of single-phase driving circuit structure based on MEMS sensor | |
| CN105007004B (en) | A kind of three-phase drive circuit structure based on MEMS sensor | |
| CN204283625U (en) | Gas turbine rotary speed conditioning module | |
| CN105007003B (en) | A kind of three-phase drive circuit structure based on single MEMS sensor | |
| CN204928637U (en) | Three -phase driving circuit structure based on many MEMS sensor | |
| CN204928636U (en) | Single -phase drive circuit structure based on many MEMS sensor | |
| CN204928635U (en) | Three -phase driving circuit structure based on single MEMS sensor | |
| CN206072476U (en) | A kind of valve control device adjusted for fluid flow | |
| CN201956951U (en) | Multi-stage rotation speed control device for fan motor | |
| CN102810974A (en) | Detection pulse generator, control chip and switching power source | |
| CN203350841U (en) | Charge compensation type mutual capacitance sensing circuit | |
| CN109698687A (en) | A kind of magnetic signal detection sequential control circuit and control method | |
| CN204597834U (en) | A kind of driving device for step-by-step |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180914 Address after: 610000 1, Tianyi street, Chengdu hi tech Zone, Chengdu, Sichuan, 1 Patentee after: Sichuan Hongyi intellectual property operations limited wisdom Address before: 610000 1408, 4, 1408, Tianyi street, Chengdu high tech Zone, Sichuan, China. Patentee before: CHENGDU HONGYI TIANCHENG TECHNOLOGY CO., LTD. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200528 Address after: 3a, NANDA industry university research building, No. 6, Yuexing Third Road, high tech Zone, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN HAIPPI NANOOPTICAL TECHNOLOGY CO., LTD. Address before: 610000 1, Tianyi street, Chengdu hi tech Zone, Chengdu, Sichuan, 1 Patentee before: SICHUAN HONGYI WISDOM INTELLECTUAL PROPERTY OPERATION Co.,Ltd. |