CN105040025A - Double metal hydroxide-composited porous bismuth vanadate photo-electrode and preparation method thereof - Google Patents

Double metal hydroxide-composited porous bismuth vanadate photo-electrode and preparation method thereof Download PDF

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CN105040025A
CN105040025A CN201510239020.9A CN201510239020A CN105040025A CN 105040025 A CN105040025 A CN 105040025A CN 201510239020 A CN201510239020 A CN 201510239020A CN 105040025 A CN105040025 A CN 105040025A
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bismuth
bismuth vanadate
bivo
metal hydroxide
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CN105040025B (en
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项顼
何宛虹
周辰
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Beijing University of Chemical Technology
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Abstract

The invention provides a double metal hydroxide-composited porous bismuth vanadate photo-electrode and a preparation method thereof, wherein a composite of Co-Al double metal hydroxide and bismuth vanadate is grown on the surface of an electric-conductive glass substrate. The pore size of the bismuth vanadate is 50-120 nm and the particle size of the bismuth vanadate is 200-300 nm. The Co-Al double metal hydroxide is grown on the bismuth vanadate particles with the thickness being 10-100 nm. The preparation method includes following steps: 1) preparing a porous bismuth vanadate electrode through an electro-deposition precursor method; and 2) growing the Co-Al double metal hydroxide on the porous bismuth vanadate electrode. The method is simple in operation and is mild in reaction conditions. With zinc ion as an electro-deposition additive for controlling the size and appearance of the bismuth vanadate electrode, the method is more green and environment-friendly compared with a method in the prior art with an organic template agent or organic additives, so that the method is suitable for large-scale production. The photo-electrode can be directly used in photo-electro-chemical water oxidizing catalytic reaction. Because of excellent catalytic performance and visible light absorption capability of the Co-Al double metal hydroxide, the photo-electrode is significantly improved in water oxidizing performance.

Description

Compound porous pucherite optoelectronic pole of double-metal hydroxide and preparation method thereof
Technical field
The invention belongs to optoelectronic pole field of material preparation, be specifically related to compound porous pucherite optoelectronic pole of double-metal hydroxide and preparation method thereof, and for sunlight drive photoelectrocatalysis water decomposition.
Background technology
Modern society, to the excessive exploitation of the traditional energy such as coal, oil and natural gas and use, has caused huge energy dilemma and problem of environmental pollution.In order to realize Sustainable development, development and utilization renewable energy source industry is own through becoming the grand strategy target of countries in the world.Wherein sun power is as a kind of clean renewable energy source, and its reserves are tens thousand of times of other renewable energy sources; Sun power in use discharges CO hardly simultaneously 2isothermal chamber gas, contribute to alleviating the environmental problems such as the Greenhouse effect that the environmental pollution that causes of crude oil leakage and fuel combustion cause, this allows sun power occupy critical role in renewable energy source industry.In various Solar use mode, photocatalytic water splitting is a kind of by the effective means of transform light energy chemical energy, and its degradation production is O 2and H 2, the former is extensively present in air, and for environmental diversity provides possibility, the latter is the novel secondary energy, and its energy density is high, use procedure is pollution-free, and products of combustion is only H 2o, has efficient, clean feature.Therefore greatly develop photo-electrocatalytic technology realize light-chemical energy for alleviating energy crisis, solve the aspects such as the environmental problem that goes from bad to worse and have active effect.Due to raw material be easy to get, Stability Analysis of Structures, efficiency is higher, inorganic semiconductor material causes extensive concern as optoelectronic pole, mainly contains titanium dioxide, zinc oxide, ferric oxide, pucherite etc.The band gap of pucherite is only 2.4eV, is a kind of optoelectronic pole material with good visible light-responded ability, reaches 29% [K.Sayama in the photoelectric transformation efficiency at 420nm place, A.Nomura, Z.Zou, R.Abe, Y.AbeandH.Arakawa.Chem.Comm., 2003,2908-2909.].
The bismuth resource reserve of China ranks first in the world, reserves are approximately 240,000 tons, account for world's total reserves 75% [Wang Shuling. Chinese bismuth resource situation and countermeasure. China Metal Bulletin, 2009,48:39-41], therefore developing bismuth oxycompound optoelectronic pole material has reliable resource base.The method preparing pucherite optoelectronic pole at present mainly contains organic metal salt decomposition method [P.M.Rao, L.Cai, C.Liu, I.S.Cho, C.H.Lee, J.M.Weisse, P.Yang, andX.Zheng.NanoLett., 2014,14,1099-1105], hydrothermal method [G.XiandJ.Ye, Chem.Commun., 2010,46,1893.], galvanic deposit precursor methods [D.Kang, Y.Park, J.C.Hill, andK.-S.Choi.J.Phys.Chem.Lett., 2014,5,2994-2999.] etc.Wherein, galvanic deposit precursor methods for precursor size, pattern easily regulates and controls, and is a kind of preparation method being conducive to morphology control.But the charge-conduction performance that pucherite is more weak and higher surface reaction energy barrier become the bottleneck that its performance of restriction improves.Some method of modifying are had for these problems, it is wherein the emphasis of research to the control of its pattern and size, this is because the pattern of optoelectronic pole affects the contact area of optoelectronic pole/electrolyte interface on the one hand, on the other hand, photohole has certain diffusion length, if optoelectronic pole size can be reduced, make photohole with electron recombination before diffuse to surface participate in oxidizing reaction, then can effectively promote photoelectric current [Z.-F.Huang, L.Pan, J.-J.Zou, X.Zhang, L.Wang.Nanoscale, 2014,6,14044-14063].In addition, be the important channel of improving optoelectronic pole surface water oxidation kinetics with eelctro-catalyst compound.Double-metal hydroxide (LDH) has unique laminate structure of two kinds of (or two or more) metallic element high dispersing, shows than monometallic oxyhydroxide or the higher catalytic performance of oxide compound in electrocatalysis, photochemical catalysis, photoelectrocatalysis reaction.Therefore, LDH eelctro-catalyst and optoelectronic pole compound can be improved optoelectronic pole performance; On the other hand, the LDH containing Co or Ni has visible light-responded character, therefore can promote optoelectronic pole absorbing sunlight after having visible light-responded LDH and optoelectronic pole compound.
Summary of the invention
The object of this invention is to provide optoelectronic pole that a kind of cobalt aluminum bimetal hydroxide and porous pucherite be compounded to form and preparation method thereof, it has visible absorption character and electrocatalytic properties simultaneously, can be used for photoelectrocatalysis Water oxidize reaction process.
The compound porous pucherite optoelectronic pole of cobalt aluminum bimetal hydroxide provided by the invention, be have cobalt aluminum bimetal hydroxide and pucherite mixture in the growth of conductive glass substrate surface, wherein pucherite chemical formula is BiVO 4, crystal formation is monocline, and its hole is 50 ~ 120nm, and size of particles is 200 ~ 300nm; The chemical formula of cobalt aluminum bimetal hydroxide is Co xal y(OH) z(A) nH 2o, be abbreviated as CoAl-LDH, wherein x:y represents that cobalt ion and aluminum ions mol ratio are 1 ~ 4:1, n represents hydration number, n=5 ~ 15, A represents negatively charged ion, is one or both in sulfate radical, carbonate or nitrate radical, CoAl-LDH growth is on pucherite particle, and wherein the thickness of CoAl-LDH is 10 ~ 100nm.
This CoAl-LDH compound BiVO 4the preparation method of optoelectronic pole is: the mixing salt solution of preparation containing zinc and bismuth is electrolytic solution, and solvent is that water mixes mutually with ethylene glycol.Add in electrolyzer by this electrolytic solution, using conductive glass sheet as working electrode, apply constant potential to working electrode under room temperature and carry out galvanic deposit, bismuth ion is reduced to bismuth simple substance at working electrode surface, and the zine ion in solution plays additive.Electrode surface after deposit drips the dimethyl sulphoxide solution of vanadium acetylacetonate, and then calcine, in calcination process, bismuth simple substance is converted into pucherite, and sample removes excessive vanadium oxide in basic solution afterwards, obtains porous pucherite electrode; Preparation containing the solubility mixed-salt aqueous solution of cobalt, aluminium, and adds urea and Neutral ammonium fluoride, the pucherite electrode prepared is put into this mixing salt solution, obtains CoAl-LDH compound BiVO after hydro-thermal reaction 4optoelectronic pole.
Concrete preparation process is as follows:
A. bismuth salt and zinc salt are added preparation in mixed solvent and contain the mixing salt solution of zinc and bismuth, wherein the mol ratio of bismuth salt and zinc salt is Bi:Zn=1:1 ~ 4, bismuth ion volumetric molar concentration is 5 ~ 30mmol/L: described bismuth salt is the one in Bismuth trinitrate, bismuth chloride, bismuth sulfate, is preferably Bismuth trinitrate; Described zinc salt is the one in zinc nitrate, zinc chloride, zinc sulfate, is preferably zinc nitrate; Described mixed solvent is ethylene glycol and deionized water volume ratio is the mixing solutions of 1 ~ 6:1.
B. the mixing salt solution of steps A is added in three-electrode cell as electrolytic solution, be working electrode with conductive glass, take Ag/AgCl as reference electrode, platinum filament is to electrode, adopt electrochemical workstation to apply-0.6 ~ 0.4V constant potential to working electrode, deposition total charge dosage is-7 ~-15 × 10 -2ccm -2, conductive glass electrode complete for deposition is taken out, with ethanol purge, at room temperature seasoning 0.5 ~ 3 hour;
Described conductive glass is the SnO of doped with fluorine 2conductive glass, is abbreviated as FTO conductive glass, and this conductive glass needs before using with acetone: Virahol: the solution ultrasonic cleaning of water=1:1:1 volume ratio, and naturally dries; The working area of conductive glass is 1 ~ 50cm 2.Described electrolyzer is single chamber or two rooms electrolyzer, and potential value is the electromotive force relative to reversible hydrogen electrode;
C. the dimethyl sulphoxide solution of the vanadium acetylacetonate of 0.05 ~ 0.2mol/L is prepared, in step B, post-depositional conductive glass electrode drips 100 ~ 400 μ L, then in retort furnace 400 ~ 550 DEG C calcining 2 ~ 4 hours, be down to after room temperature until temperature and take out, put into volumetric molar concentration be the NaOH aqueous solution of 0.2 ~ 2mol/L to the complete submergence of electrode slice, mild stirring 0.5 ~ 3 hour, takes out after electrode slice with deionized water rinsing, and at 60 ~ 80 DEG C dry 0.5 ~ 6 hour, obtain porous BiVO 4electrode;
D. Co (NO is used 3) 26H 2o, Al (NO 3) 39H 2o, urea, NH 4f is hybridly prepared into mixing salt solution, and wherein total concentration of metal ions is 15 ~ 50mmol/L, Co 2+with Al 3+mol ratio be 2 ~ 4:1, the concentration of urea is 30 ~ 80mmol/L, NH 4the concentration of F is 15 ~ 50mmol/L, after stirring, is transferred in water heating kettle inner bag, by the BiVO prepared in step D 4the conducting surface of electrode is swayed downwards in water heating kettle inner bag, and growth is had BiVO 4part be immersed in completely in solution, hydro-thermal reaction 2 ~ 8h at 100 ~ 200 DEG C, after naturally cooling, take out electrode, with after deionized water rinsing in 30 ~ 60 DEG C of baking ovens dry 20 ~ 60min, obtain CoAl-LDH compound BiVO 4optoelectronic pole.
Fig. 1 is BiVO 4x-ray powder diffraction (XRD) result of electrode, occurs in figure corresponding to BiVO 4(011), (121) diffraction peak, with the BiVO of monoclinic form sheelite phase 4diffraction peak (JCPDSNo.75-1866) is consistent;
Fig. 2 is CoAl-LDH compound BiVO 4x-ray powder diffraction (XRD) result of optoelectronic pole, except BiVO 4outside the diffraction peak of FTO conductive glass sheet, there is (003), (006), (009) of LDH, (018) characteristic peak;
Fig. 3 is porous BiVO 4the scanning electron microscope (SEM) photograph (SEM) of electrode, wherein pucherite even particle distribution, surface irregularity, median size is 240nm, and hole is 70 ~ 100nm.
By CoAl-LDH compound BiVO 4optoelectronic pole is used for the performance test of photoelectricity Water oxidize reaction, and result is the Water oxidize density of photocurrent of this optoelectronic pole under 1.23V electromotive force is 0.8 ~ 1.2mA/cm 2, this value is simple BiVO 4more than 2 times of electrode.
The present invention has following unusual effect:
(1) adopt simple inorganic zinc salt as the size of additive control pucherite electrode and pattern, more traditional organic formwork agent or additive is more green, environmental protection, nontoxicity, cost is lower.
(2) the porous pucherite electrode prepared using inorganic zinc salt as additive has abundant pore structure, is conducive to high-performance, low cost optical electrode as photochemical catalyzing, is applicable to mass-producing exploitation.
(3) double-metal hydroxide and pucherite complex light electrode, double-metal hydroxide can be utilized to strengthen optoelectronic pole to visible absorption character utilize sunlight, and CoAl-LDH has good electrocatalytic properties, can significantly reduce photoelectric current take-off potential, improve efficiency of energy utilization.
Accompanying drawing explanation
Fig. 1: the BiVO that embodiment 1 obtains 4the XRD figure of electrode.
Fig. 2: the CoAl-LDH compound BiVO that embodiment 1 obtains 4the XRD figure of optoelectronic pole.
Fig. 3: the porous BiVO that embodiment 1 obtains 4the SEM figure of electrode.
Embodiment
Embodiment 1
A. 0.4851gBi (NO is taken 3) 35H 2o, 0.8925gZn (NO 3) 26H 2o joins in the mixing solutions of 50mL deionized water and 100mL ethylene glycol, is mixed with mixing salt solution;
B. acetone is used: Virahol: the solution ultrasonic cleaning FTO (SnO of doped with fluorine of water=1:1:1 volume ratio 2conductive glass) conductive glass sheet, and naturally dry conductive glass sheet; Be transferred in three-electrode cell by the mixing salt solution of steps A, with conductive glass substrate for working electrode, wherein the working area of conductive glass sheet is 2cm 2.Take Ag/AgCl as reference electrode, platinum filament is to electrode, and electrolyzer is single compartment electrolytic cell, and adopt electrochemical workstation to apply the constant negative potential of 0.01V to working electrode, the total charge dosage of galvanic deposit is-8.35 × 10 -2ccm -2.Electrode complete for deposition is taken out, with ethanol purge, at room temperature seasoning 0.5 hour;
C. take 0.1393g vanadium acetylacetonate and be dissolved in 2mL dimethyl sulfoxide (DMSO), the electrode slice obtained drips 200 these solution of μ L in step B, then calcine 2 hours with 450 DEG C in retort furnace, be down to after room temperature until temperature and take out; Take 4gNaOH, be dissolved in 100mL deionized water, the electrode slice after calcining in step C is put into NaOH solution, gentle agitation 0.5 hour, take out with deionized water rinsing after electrode slice, and at 70 DEG C dry 0.5 hour, obtain porous BiVO 4electrode, its median size is 240nm, and hole is 70 ~ 100nm;
D. 0.3056gCo (NO is taken 3) 26H 2o, 0.1313gAl (NO 3) 39H 2o, 0.2102g urea, 0.0519gNH 4f and deionized water preparation 70mL salts solution; Stir and be transferred in water heating kettle inner bag, by the BiVO prepared in step D 4optoelectronic pole faces down and sways in water heating kettle inner bag, and grown BiVO 4part be immersed in completely in solution, hydro-thermal reaction 4h at 100 DEG C, after naturally cooling, take out optoelectronic pole, in 40 DEG C of baking ovens, dry 30min with after deionized water rinsing, obtain CoAl-LDH compound BiVO 4optoelectronic pole.
Test above-mentioned CoAl-LDH compound BiVO 4performance as optoelectronic pole: in the electrolyzer of three electrode configurations, with CoAl-LDH compound BiVO 4photoelectricity is working electrode very, and Ag/AgCl is reference electrode, and platinum filament is to electrode, and electrolyzer is single chamber or double-chamber structure; Irradiate optoelectronic pole front with the xenon source (simulated solar irradiation) of assembling AM1.5G spectral filter, light intensity is 100mW/cm 2; Utilize electrochemical workstation (CHI660C) to apply voltage, electrolytic solution is the phosphate buffer soln (potassium primary phosphate-dipotassium hydrogen phosphate) of pH=7, and concentration is 0.1mol/L; Use cyclic voltammetry (CV) to test, wherein the scanning speed of cyclic voltammetry is 0.01V/s.Test the electromotive force (E obtained ag/AgCl) be converted into electromotive force (E to reversible hydrogen electrode rHE): E rHE=E ag/AgCl+ 0.197+0.059 × pH.Result: its photoelectric current take-off potential is 0.24V, under electromotive force is 1.23V, Water oxidize generates the density of photocurrent of oxygen is 0.95mA/cm 2.
Embodiment 2
A. 0.4851gBi (NO is taken 3) 35H 2o, 0.595gZn (NO 3) 26H 2o joins in the mixing solutions of 50mL deionized water and 100mL ethylene glycol, is mixed with mixing salt solution;
B is with embodiment 1, and difference is the working area of conductive glass is 1.5cm 2, total deposited charge of galvanic deposit is-10 × 10 -2ccm -2
C. take 0.1393g vanadium acetylacetonate and be dissolved in 2mL dimethyl sulfoxide (DMSO), the electrode slice obtained drips 150 these solution of μ L in step B, then calcine 2 hours with 450 DEG C in retort furnace, be down to after room temperature until temperature and take out; Take 4gNaOH, be dissolved in 100mL deionized water, to add in step C the electrode slice after calcining, gentle agitation 1 hour, take out with deionized water rinsing after electrode slice, and at 70 DEG C dry 0.5 hour, obtain porous BiVO 4electrode, its median size is 260nm, and hole is 60 ~ 95nm;
D. 0.4365gCo (NO is taken 3) 26H 2o, 0.1875gAl (NO 3) 39H 2o, 0.2102g urea, 0.0519gNH 4f is formulated as the 50mL aqueous solution; After salts solution is stirred, be transferred in water heating kettle inner bag, by the BiVO prepared in step D 4optoelectronic pole faces down and sways in water heating kettle inner bag, and grown BiVO 4part be immersed in completely in solution, hydro-thermal reaction 4h at 100 DEG C, after naturally cooling, take out optoelectronic pole, in 40 DEG C of baking ovens, dry 30min with after deionized water rinsing, obtain CoAl-LDH compound BiVO 4optoelectronic pole.
Adopt with embodiment 1 evaluation method, evaluation result: photoelectric current take-off potential is 0.26V, under electromotive force is 1.23V, Water oxidize generates the density of photocurrent of oxygen is 0.90mA/cm 2.
Embodiment 3
A. 0.4851gBi (NO is taken 3) 35H 2o, 0.2975gZn (NO 3) 26H 2o joins in the mixing solutions of 50mL deionized water and 100mL ethylene glycol, is mixed with mixing salt solution;
B is with embodiment 1, and difference is the constant negative potential that galvanic deposit uses is-0.18V, and total deposited charge of galvanic deposit is-9 × 10 -2ccm -2
C. take 0.1393g vanadium acetylacetonate and be dissolved in 2mL dimethyl sulfoxide (DMSO), the electrode slice obtained drips 200 these solution of μ L in step B, then calcine 3 hours with 450 DEG C in retort furnace, be down to after room temperature until temperature and take out; Take 4gNaOH, be dissolved in 100mL deionized water, to add in step C the electrode slice after calcining, gentle agitation 1 hour, take out with deionized water rinsing after electrode slice, and at 70 DEG C dry 0.5 hour, obtain porous BiVO 4electrode, its median size is 236nm, and hole is 85 ~ 100nm;
D. 0.4365gCo (NO is taken 3) 26H 2o, 0.1875gAl (NO 3) 39H 2o, 0.1050g urea, 0.0370gNH 4f is formulated as the 50mL aqueous solution; After salts solution is stirred, be transferred in water heating kettle inner bag, by the BiVO prepared in step D 4optoelectronic pole faces down and sways in water heating kettle inner bag, and grown BiVO 4part be immersed in completely in solution, hydro-thermal reaction 6h at 100 DEG C, after naturally cooling, take out optoelectronic pole, in 40 DEG C of baking ovens, dry 30min with after deionized water rinsing, obtain CoAl-LDH compound BiVO 4optoelectronic pole.
Adopt with embodiment 1 evaluation method, evaluation result: photoelectric current take-off potential is 0.23V, under electromotive force is 1.23V, Water oxidize generates the density of photocurrent of oxygen is 0.93mA/cm 2.
Embodiment 4
A. 0.7276gBi (NO is taken 3) 35H 2o, 0.4462gZn (NO 3) 26H 2o joins in the mixing solutions of 50mL deionized water and 100mL ethylene glycol, is mixed with mixing salt solution;
B is with embodiment 1, and difference is the working area of conductive glass is 1.8cm 2, the constant negative potential that galvanic deposit uses is-0.08V, and total deposited charge of galvanic deposit is-12 × 10 -2ccm -2
C. take 0.1393g vanadium acetylacetonate and be dissolved in 2mL dimethyl sulfoxide (DMSO), the electrode slice obtained drips 120 these solution of μ L in step B, then calcine 2 hours with 450 DEG C in retort furnace, be down to after room temperature until temperature and take out; Take 4gNaOH, be dissolved in 100mL deionized water, to add in step C the electrode slice after calcining, gentle agitation 0.5 hour, take out with deionized water rinsing after electrode slice, and at 70 DEG C dry 0.5 hour, obtain porous BiVO 4electrode, its median size is 252nm, and hole is 77 ~ 110nm.
D. 0.6984gCo (NO is taken 3) 26H 2o, 0.2250gAl (NO 3) 39H 2o, 0.1050g urea, 0.0370gNH 4f is formulated as the 60mL aqueous solution; After salts solution is stirred, be transferred in water heating kettle inner bag, by the BiVO prepared in step D 4optoelectronic pole faces down and sways in water heating kettle inner bag, and grown BiVO 4part be immersed in completely in solution, hydro-thermal reaction 3h at 100 DEG C, after naturally cooling, take out optoelectronic pole, in 40 DEG C of baking ovens, dry 30min with after deionized water rinsing, obtain CoAl-LDH compound BiVO 4optoelectronic pole.
Adopt with embodiment 1 evaluation method, evaluation result: photoelectric current take-off potential is 0.25V, under electromotive force is 1.23V, Water oxidize generates the density of photocurrent of oxygen is 0.94mA/cm 2.

Claims (2)

1. the preparation method of the compound porous pucherite optoelectronic pole of double-metal hydroxide: concrete steps are as follows:
A. bismuth salt and zinc salt are added preparation in mixed solvent and contain the mixing salt solution of zinc and bismuth, wherein the mol ratio of bismuth salt and zinc salt is Bi:Zn=1:1 ~ 4, bismuth ion volumetric molar concentration is 5 ~ 30mmol/L: described bismuth salt is the one in Bismuth trinitrate, bismuth chloride, bismuth sulfate, is preferably Bismuth trinitrate; Described zinc salt is the one in zinc nitrate, zinc chloride, zinc sulfate, is preferably zinc nitrate; Described mixed solvent is ethylene glycol and deionized water volume ratio is the mixing solutions of 1 ~ 6:1;
B. the mixing salt solution of steps A is added in three-electrode cell as electrolytic solution, be working electrode with conductive glass, take Ag/AgCl as reference electrode, platinum filament is to electrode, adopt electrochemical workstation to apply-0.6 ~ 0.4V constant potential to working electrode, deposition total charge dosage is-7 ~-15 × 10 -2ccm -2, conductive glass electrode complete for deposition is taken out, with ethanol purge, at room temperature seasoning 0.5 ~ 3 hour;
Described conductive glass is the SnO of doped with fluorine 2conductive glass, the working area of conductive glass is 1 ~ 50cm 2; Described electrolyzer is single chamber or two rooms electrolyzer, and potential value is the electromotive force relative to reversible hydrogen electrode;
C. the dimethyl sulphoxide solution of the vanadium acetylacetonate of 0.05 ~ 0.2mol/L is prepared, in step B, post-depositional conductive glass electrode drips 100 ~ 400 μ L, then in retort furnace 400 ~ 550 DEG C calcining 2 ~ 4 hours, be down to after room temperature until temperature and take out, put into volumetric molar concentration be the NaOH aqueous solution of 0.2 ~ 2mol/L to the complete submergence of electrode slice, mild stirring 0.5 ~ 3 hour, takes out after electrode slice with deionized water rinsing, and at 60 ~ 80 DEG C dry 0.5 ~ 6 hour, obtain porous BiVO 4electrode;
D. Co (NO is used 3) 26H 2o, Al (NO 3) 39H 2o, urea, NH 4f is hybridly prepared into mixing salt solution, and wherein total concentration of metal ions is 15 ~ 50mmol/L, Co 2+with Al 3+mol ratio be 2 ~ 4:1, the concentration of urea is 30 ~ 80mmol/L, NH 4the concentration of F is 15 ~ 50mmol/L, after stirring, is transferred in water heating kettle inner bag, by the BiVO prepared in step D 4the conducting surface of electrode is swayed downwards in water heating kettle inner bag, and growth is had BiVO 4part be immersed in completely in solution, hydro-thermal reaction 2 ~ 8h at 100 ~ 200 DEG C, after naturally cooling, take out electrode, with after deionized water rinsing in 30 ~ 60 DEG C of baking ovens dry 20 ~ 60min, obtain cobalt aluminum bimetal hydroxide compound BiVO 4optoelectronic pole.
2. the compound porous pucherite optoelectronic pole of double-metal hydroxide prepared of method according to claim 1, it is for having cobalt aluminum bimetal hydroxide and pucherite mixture in the growth of conductive glass substrate surface, and wherein pucherite particle chemical formula is BiVO 4, crystal formation is monocline, and its hole is 50 ~ 120nm, and size of particles is 200 ~ 300nm; The chemical formula of cobalt aluminum bimetal hydroxide is Co xal y(OH) z(A) nH 2o, wherein x:y represents that cobalt ion and aluminum ions mol ratio are that 1 ~ 4:1, n represent hydration number, n=5 ~ 15, A represents negatively charged ion, is one or both in sulfate radical, carbonate or nitrate radical, the growth of cobalt aluminum bimetal hydroxide is on pucherite particle, and its thickness is 10 ~ 100nm.
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