CN105026922A - Solid state gas detection sensor diagnostic - Google Patents
Solid state gas detection sensor diagnostic Download PDFInfo
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- CN105026922A CN105026922A CN201580000169.XA CN201580000169A CN105026922A CN 105026922 A CN105026922 A CN 105026922A CN 201580000169 A CN201580000169 A CN 201580000169A CN 105026922 A CN105026922 A CN 105026922A
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- oxide semiconductor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/007—Arrangements to check the analyser
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0006—Calibrating gas analysers
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- Combustion & Propulsion (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
A metal oxide semiconductor-based toxic gas detector (10) is provided. The metal oxide semiconductor-based detector includes a metal oxide semiconductor-based gas sensor (30) that has an electrical characteristic that varies with concentration of a toxic gas. Measurement circuitry (28) is coupled to the metal oxide semiconductor-based gas sensor (30) and is configured to measure the electrical characteristic and provide a digital indication of the measured electrical characteristic. A controller (22) is coupled to the measurement circuitry (28) and is configured to provide a toxic gas output based on the digital indication. The controller (22) is also configured to provide a diagnostic output relative to the metal oxide semiconductor-based sensor (30) based on fluctuations of the measured electrical characteristic over time.
Description
Background technology
The toxic gas of such as hydrogen sulfide gas may be even fatal under low concentration.Normally, when people is exposed to this toxic gas, need relatively to find medical treatment and nursing rapidly.Therefore, in many industrial environments, even if under complicated and the most long-range environment, current when leaking out, can detect that toxic gas is very important as early as possible at very low concentrations.In addition, even if when the generation of release of toxic gas is very rare, it is very important that toxic gas sensor is ready to perform its function all the time.
In many countries, along with the resistance to overturning of sensor response time and sensing element is improved, health and safety standard is slowly reducing acceptable exposure grade always.Such as, in the U.S., Occupational Safety and Health Administration (OSHA) provides the acceptable concentration limit---and the sulfuretted hydrogen of exposure was 20/1000000ths (20ppm) 8 hours periods, and peak-peak exposes as 10 minutes 50ppm.
The important goal of the toxic gas detector of any fixed position protects staff and the public by the danger classes of this toxic gas at sensor proximity of warning appearance.For many years, electrification and metal-oxide semiconductor (MOS) (MOS) battery are turned out to be toxic gas detection technology on the spot.Sensor based on MOS has the life-span long compared with electrochemical sensor, and in the temperature of wide region, particularly at high temperature, and continuous working under very dry conditions.
In some implementations, toxic gas sensor can be constructed to the sandwich construction of platinum heating element, insulating medium and air-sensitive resistive film.In other implementation, toxic gas sensor, such as hydrogen sulfide sensor, can be constructed to have the pearl (bead) of the well heater be arranged on wherein and travel across the wire of this pearl.This pearl is formed by gas sensory.The traditional metal oxide semiconductor material of use or nanoscale strengthen with the metal oxide semiconductor material of very big improving SNR by this gas sensitive.In operation, when toxic gas contacts with gas sensitive, the change of the conductivity of sensor can be measured.These change the electron device that is generally used in detector assembly and are exaggerated.
The sensor of the type utilizes the polycrystalline structure of sensing material (metal oxide semiconductor) and the electronegative surface oxygen species of existence usually, and this surface oxygen species controls the height of Schottky barrier and the resistance of material.When sensor is exposed to some reducing gas, this Surface Oxygen will be consumed, and decrease Schottky barrier and resistance, and this forms sensing signal.
Feasible signal can be provided in order to ensure metal-oxide semiconductor (MOS) toxic gas sensor, importantly can detect for diagnosis, or determine that whether sensor is damaged, or worsen.
Summary of the invention
The invention provides a kind of toxic gas detector based on metal-oxide semiconductor (MOS).Detector based on metal-oxide semiconductor (MOS) comprises the gas sensor based on metal-oxide semiconductor (MOS), should have the electrical characteristics of the concentration change along with toxic gas based on the gas sensor of metal-oxide semiconductor (MOS).Metering circuit is connected to the gas sensor based on metal-oxide semiconductor (MOS), and is configured to measure described electrical characteristics and provides the numeral of measured electrical characteristics to indicate.Controller is connected to described metering circuit, and is configured to provide poisonous gas output based on described numeral instruction.Controller is also configured to provide the diagnosis about the sensor based on metal-oxide semiconductor (MOS) to export based on the fluctuation of electrical characteristics measured over a period.
Accompanying drawing explanation
Fig. 1 is the diagrammatic view of the metal-oxide semiconductor (MOS) toxic gas detector that embodiments of the invention are used in particular for.
Fig. 2 is the block diagram of metal-oxide semiconductor (MOS) toxic gas detector according to an embodiment of the invention.
Fig. 3 is the graphic scatter diagram of the metal-oxide semiconductor (MOS) toxic gas sensor signal measurements of Analog-digital Converter over a period.
Fig. 4 is the process flow diagram of the method generated about the diagnosis instruction of metal oxide semiconductor toxic gas sensor according to an embodiment of the invention.
Embodiment
As mentioned above, the diagnosis of toxic gas sensor guarantees that toxic gas sensor is effectively working and can provide the importance of reliable signal when toxic gas occurs.In safety applications, the utilization of the toxic gas sensor of based semiconductor metal oxide detection technology needs multiple diagnosis with the failure mode of detecting sensor.For this safety applications, need all failure modes that detecting sensor may stand, the short circuit of such as sensor element and the sensor element of open circuit.
Embodiments of the invention roughly detect the more delicate failure mode of solid metal oxide semiconductor toxic gas sensor.Particularly, this failure mode is considered to aging sensor.When this failure mode occurs, sensor reading will no longer operatively indicate the concentration of toxic gas.But sensor is by the actual resistance of continuation instruction.Thus, aging inefficacy can not be detected based on the sensor diagnostic detecting short circuit or open circuit.Alternatively, embodiments of the invention supplement the signal of metal-oxide semiconductor (MOS) toxic gas sensor on the one hand generally to detect aging inefficacy.Particularly, when metal-oxide semiconductor (MOS) toxic gas sensor is operated properly, sensor resistance will have naturally change or fluctuation.Normally, sensor input signal is sent to low-pass filter by sensor electronics, to remove these changes.Thus, the resistance of sensor is processed or be not so characterized, to remove this fluctuation before providing toxic gas sensor output.But according to embodiments of the invention, as described below, these changes are measured and particularly for providing the diagnosis about metal-oxide semiconductor (MOS) toxic gas sensor to indicate.
Fig. 1 is the diagrammatic view of the metal-oxide semiconductor (MOS) toxic gas detector that embodiments of the invention are used in particular for.Detector 10 comprises the electric-device housing 12 being connected to sensor main body 14.Sensor main body 14 comprises the toxic gas sensor based on metal-oxide semiconductor (MOS), such as these hydrogen sulfide gas sensor, and this sensor can be " traditional " metal oxide semiconductor sensor or the semiconductor gas sensor based on NE-MOS.The bottom 16 of sensor main body 14 is configured for and toxic gas sensor is exposed to surrounding air to determine the concentration of the toxic gas of such as hydrogen sulfide gas in surrounding air.Sensor in sensor main body 14 is connected to the suitable electron device (shown in Fig. 2) in shell 12 via conduit 18.Electron device in shell 12 can make sensor respond to be exaggerated, linearization and characterization, to provide the instruction of concentration of toxic gases.This instruction can be routed through process communications loop through the process of conduit 20 or procedure communication portion is provided, and/or is locally provided.This locality instruction of toxic gas can comprise local operator interface (LOI), and this local operator interface shows concentration of toxic gases, the sense of hearing or visual alarm or their any combination.
Fig. 2 is the block diagram of metal-oxide semiconductor (MOS) toxic gas detector according to an embodiment of the invention.Detector 10 comprises the electric-device housing 12 being connected to sensor main body 14.Controller 22, communication module 24, power module 26 and metering circuit 28 are arranged in electric-device housing 12.Toxic gas sensor 30 based on metal-oxide semiconductor (MOS) to be arranged in sensor main body 14 and to be connected to metering circuit 28.
Controller 22 can be any suitable treatment circuit, and digital processing technology or filtering technique can be applied in measurement value sensor by this treatment circuit, to determine or the change of characterized sensor signal or fluctuation.In addition, controller 22 is also configured for and produces concentration of toxic gases output based on measurement value sensor (or multiple measurement value sensor).In one embodiment, controller 22 is microprocessors.Controller 22 is connected to telecommunication circuit 24 and communicates with other device in supervisory system with process control to allow controller 22.Telecommunication circuit can comprise the circuit that permission controller 22 carries out according to process industry standard communication protocol communicating, and this communication protocol is such as highway addressable remote transducer
agreement, FOUNDATION
tMfield bus protocol or other agreement.In addition, in certain embodiments, except or replace use wire process communication, device 10 can radio communication.Such as, in one embodiment, telecommunication circuit 24 can allow to communicate according to IEC62591.Finally, telecommunication circuit can provide the local communication exported, such as local display or alarm.
Power module 26 is connected to all components in shell 12, shown in the arrow " be connected to all " as being labeled as.Power module 26 is configured for and receives electric power from suitable source, and provides voltage-regulation or suitable power adjustments to the circuit in shell 12.In certain embodiments, power module 26 can be connected to wired process communication loop, makes device 10 can receive its all work capacities from wired process communication loop.In other embodiments, power module 26 can be connected to interchange or the direct supply of suitable source.
Metering circuit 28 is connected to controller 22 and can obtains measured value from the toxic gas sensor 30 of based semiconductor, and provides its numeral to indicate to controller 22.Metering circuit 28 can comprise one or more analog to digital converter, suitable multiplex adapter circuit, and amplifies and/or linearizer.Further, metering circuit 28 can comprise the suitable filtering circuit of such as low-pass filter, and this filtering circuit is optionally placed between sensor and analog to digital converter.In this embodiment, this low-pass filter is placed between sensor and analog to digital converter and permission is directly measured the signal representing toxic gas sensor concentration.And walk around low-pass filter analog to digital converter will be allowed to measure about the fluctuation of sensor signal, this fluctuation represents suitable sensor function.But should illustrate, embodiments of the invention can be put into practice when not using analog filtering, and put into practice when fluctuating and toxic gas sensor concentration is obtained with counting by the measured value of multiple Analog to Digital Converter.
Fig. 3 is the graphic scatter diagram of the metal-oxide semiconductor (MOS) toxic gas sensor signal measurements of Analog-digital Converter over a period.As shown in Figure 3, sensor shows the fluctuation or change that can detect.In the example shown in Fig. 3, concentration of toxic gases is illustrated the change in from the time of about five minutes to the time of about 70 minutes.Vertical axis counts for the analog to digital converter of each bulk measurement (individual measurement).Concentration of toxic gases is incrementally changing within the time of 40 minutes from the time of 5 minutes, and when the time of 40 minutes, sensor was had an appointment 57850 outputs counted.When the time of about 40 minutes, concentration of toxic gases started to reduce gradually, until when whenabouts T=65 minute, now analog to digital conversion counting is about 57775.As the example shows, change is usually in the magnitude of about 25 countings.According to various embodiments of the present invention, although the impact that concentration of toxic gases can be processed in any suitable manner to remove change, or not so on a bit of widow time, logarithm value is averaged, to provide metastable concentration of toxic gases to export, but diagnosis output generates based on fluctuation substantially.This fluctuation can be detected in any suitable manner or be observed.Such as, array or memory construction that other is suitable can be kept at a series of analog to digital converter measured value in fixing a period of time, or a certain amount of measured value simply.Memory construction can be updated and make when new measured value is obtained, and the oldest measured value is dropped.Controller 22, or other suitable processor any, digitally can operate the measured value of storage array or sequence, to obtain the information about the wave characteristic such as changed.Such as, the change of this group measured value can calculate simply according to existing statistical technique.But, according to embodiments of the invention, other the suitable mathematical operation any of the useful information that can provide about degree of fluctuation can be used.
Fig. 4 is the process flow diagram of the method generated about the diagnosis instruction of metal oxide semiconductor toxic gas sensor according to an embodiment of the invention.Method 100 starts at square 102 place, and at square 102 place, multiple measurement value sensor is obtained.These measurement value sensors are obtained within one suitable period, be such as several seconds or even several minutes scope in.Then, at square 104 place, the fluctuation of sensor signal measured value is detected.As mentioned above, in one embodiment, multiple measurement value sensor can be stored in memory and be processed with change detected according to any suitable mathematical technique.Such as, statistical treatment technology 106 can be used to detect this fluctuation.In addition, or alternatively, the difference between individual measured value can be processed or not so experience threshold process 108.Finally, the measured value be stored can experience digital filter 110 to amplify or the change of outstanding sensor signal measured value.Then, at square 112 place, the fluctuation be detected or change and pre-selected limit value compare.This limit value can be defined or be set up in the manufacture process of device, or this limit value can being set up at this device during one's term of military service.Such as, a kind of specific toxic gas sensor can show more evolutions than the toxic gas sensor of another kind of type.Thus, when detector is on active service together with specific toxic gas sensor, the change threshold being suitable for this sensor can be set up.If the change be detected of the toxic gas sensor of based semiconductor is below chosen limit value, control to enter square 114, at square 114 place controller 22 by generation diagnosis instruction.This diagnosis instruction can be the fault or error message that generate, and this fault or error message are transmitted by process communications loop or procedure communication portion, the instruction of this locality that visually or acoustically indicates at detector place or their any combination.Alternatively, if the change be detected is not below chosen limit value, then control to enter square 116 and method 100 terminates.Therefore, detector exports providing concentration of toxic gases simply when not providing any indicating fault.
Method 100 can be performed termly, and such as one minute once, or performs in response to any suitable input signal.Such as, technician can press button or order is sent to device 10, impels device 10 manner of execution 100.In addition, the frequency of manner of execution 100 can also be the function of toxic gas sensor concentration value.Such as, if device 10 instruction is greater than the toxic gas sensor concentration of chosen threshold value, then method 100 can perform at a first frequency, and if toxic gas sensor concentration is less than chosen threshold value, then method 100 can perform at different frequencies.
Can believe, embodiments of the invention are by by detecting, when sensor signal lost efficacy for providing important diagnosis based on the toxic gas sensor of metal-oxide semiconductor (MOS).Permission worsens at sensor and opens a way or adopt remedial measures before short circuit by further.Further, the semiconductor toxic gas sensor based on metal oxide (also non-short circuit of such as, both not opened a way) that embodiments of the invention can detect when in addition function fails accurately to indicate concentration of toxic gases.
Claims (17)
1., based on a toxic gas detector for metal-oxide semiconductor (MOS), comprising:
Based on the gas sensor of metal-oxide semiconductor (MOS), described gas sensor has the electrical characteristics of the concentration change along with toxic gas;
Metering circuit, described metering circuit is connected to the gas sensor based on metal-oxide semiconductor (MOS), and described metering circuit is configured to measure described electrical characteristics and provides the numeral instruction of measured electrical characteristics; With
Controller, described controller is connected to described metering circuit and is configured to provide poisonous gas based on described numeral instruction and exports, and described controller is also configured to provide the diagnosis about the sensor based on metal-oxide semiconductor (MOS) to export based on the fluctuation of electrical characteristics measured over a period.
2. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 1, also comprises telecommunication circuit, and described telecommunication circuit is connected to described controller and is configured to communicate according to process industry standard communication protocol.
3. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 2, wherein said telecommunication circuit is radio communication circuit.
4. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 1, wherein said controller is connected to the storer storing multiple numeral instructions, and multiple numeral instruction described in wherein said controller process, to determine fluctuating level.
5. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 4, wherein said process comprises the statistic determined about described multiple numeral instruction.
6. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 5, wherein said statistic is the wave characteristic obtained in digital form.
7. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 4, wherein by fluctuating level compared with the threshold value of pre-determining, with generate diagnosis export.
8. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 7, wherein said threshold value is relevant to the type of the toxic gas sensor based on metal-oxide semiconductor (MOS).
9. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 7, wherein said diagnosis is exported and is transmitted by process communications loop or procedure communication portion.
10. the toxic gas detector based on metal-oxide semiconductor (MOS) according to claim 7, wherein said diagnosis exports and is locally provided by described detector.
11. 1 kinds of operations have the method for the toxic gas detector of the toxic gas sensor based on metal-oxide semiconductor (MOS), and described method comprises the steps:
Obtain the series of measured values based on the electrical characteristics of the toxic gas sensor of metal-oxide semiconductor (MOS);
Toxic gas detector is provided to export based at least one measured value; And
Based on this series of measurements measured value between fluctuation generate diagnosis export.
12. methods according to claim 11, wherein generate based on fluctuation and diagnose the step exported to comprise the statistic calculating this series of measurements.
13. methods according to claim 12, wherein said statistic represents the wave characteristic obtained in digital form.
14. methods according to claim 12, wherein by described statistic compared with the threshold value of pre-determining, with determine whether generate diagnosis export.
15. methods according to claim 11, wherein said diagnosis is exported and is transmitted by process communications loop or procedure communication portion.
16. methods according to claim 11, wherein said diagnosis exports and is transmitted wirelessly.
17. methods according to claim 11, wherein said diagnosis exports and is locally transmitted by toxic gas detector.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461940002P | 2014-02-14 | 2014-02-14 | |
| US61/940,002 | 2014-02-14 | ||
| PCT/US2015/015774 WO2015123499A1 (en) | 2014-02-14 | 2015-02-13 | Solid state gas detection sensor diagnostic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105026922A true CN105026922A (en) | 2015-11-04 |
| CN105026922B CN105026922B (en) | 2018-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201580000169.XA Active CN105026922B (en) | 2014-02-14 | 2015-02-13 | The diagnosis of solid gas detection sensor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9709544B2 (en) |
| EP (1) | EP3105576A4 (en) |
| JP (1) | JP2017506759A (en) |
| CN (1) | CN105026922B (en) |
| WO (1) | WO2015123499A1 (en) |
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| CN110573869A (en) * | 2017-08-03 | 2019-12-13 | 工业科技有限公司 | System and method for evaluating toxic gas sensors using electrochemical impedance spectroscopy |
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| US11636870B2 (en) | 2020-08-20 | 2023-04-25 | Denso International America, Inc. | Smoking cessation systems and methods |
| US11932080B2 (en) | 2020-08-20 | 2024-03-19 | Denso International America, Inc. | Diagnostic and recirculation control systems and methods |
| US11828210B2 (en) | 2020-08-20 | 2023-11-28 | Denso International America, Inc. | Diagnostic systems and methods of vehicles using olfaction |
| US11813926B2 (en) | 2020-08-20 | 2023-11-14 | Denso International America, Inc. | Binding agent and olfaction sensor |
| US11760170B2 (en) | 2020-08-20 | 2023-09-19 | Denso International America, Inc. | Olfaction sensor preservation systems and methods |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110573869A (en) * | 2017-08-03 | 2019-12-13 | 工业科技有限公司 | System and method for evaluating toxic gas sensors using electrochemical impedance spectroscopy |
| CN110573869B (en) * | 2017-08-03 | 2023-02-21 | 工业科技有限公司 | System and method for evaluating toxic gas sensors using electrochemical impedance spectroscopy |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150233880A1 (en) | 2015-08-20 |
| EP3105576A1 (en) | 2016-12-21 |
| JP2017506759A (en) | 2017-03-09 |
| CN105026922B (en) | 2018-04-24 |
| EP3105576A4 (en) | 2017-08-23 |
| WO2015123499A1 (en) | 2015-08-20 |
| US9709544B2 (en) | 2017-07-18 |
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