CN105023963A - Silicon solar module - Google Patents
Silicon solar module Download PDFInfo
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- CN105023963A CN105023963A CN201510447514.6A CN201510447514A CN105023963A CN 105023963 A CN105023963 A CN 105023963A CN 201510447514 A CN201510447514 A CN 201510447514A CN 105023963 A CN105023963 A CN 105023963A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000005038 ethylene vinyl acetate Substances 0.000 claims abstract description 94
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims abstract description 94
- 229920003023 plastic Polymers 0.000 claims abstract description 22
- 239000004033 plastic Substances 0.000 claims abstract description 22
- 239000005341 toughened glass Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims description 56
- 239000007822 coupling agent Substances 0.000 claims description 38
- 230000003647 oxidation Effects 0.000 claims description 31
- 238000007254 oxidation reaction Methods 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 31
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 24
- -1 phenyl vinyl Chemical group 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000004575 stone Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910018134 Al-Mg Inorganic materials 0.000 claims description 11
- 229910018467 Al—Mg Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 239000006260 foam Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000004132 cross linking Methods 0.000 claims description 8
- 239000012760 heat stabilizer Substances 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008595 infiltration Effects 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000010248 power generation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241000168254 Siro Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a silicon solar module. The silicon solar module comprises a tempered glass layer, an EVA (ethylene-vinyl acetate copolymer) layer I, a silicon layer, an EVA layer II and a backboard, wherein the external surface of the tempered glass layer is plated with at least one antireflection film layer, thickness of each antireflection film layer is d, and d=(n+0.25)lambda, wherein lambda=400-760nm; the EVA layer II is a thermally stable modified EVA plastic layer with high heat dissipation rate; and the backboard is a multi-layer structure. The silicon solar module has steady structure, high solar utilization efficiency and high power generation efficiency, and also has good heat dissipating performance.
Description
Technical field
The present invention relates to a kind of semiconductor solar photovoltaic apparatus assembly, particularly silicon solar assembly.
Background technology
Solar module is a kind of device due to photovoltaic effect, solar energy being converted into electric energy, and solar energy is a kind of novel energy, has permanent, spatter property and the large advantage of flexibility three.The life-span of solar module is long, and it forms the overall structure of rigidity primarily of low iron ultrawhite toughened glass, EVA adhesive film, crystal silicon solar energy battery array and backboard melting under certain temperature, pressure and vacuum condition, bonding.Consider solar module result of use in practice, unit are power output has become one of important parameter evaluating photovoltaic module.Meanwhile, consider monocrystalline silicon, the shortage of polysilicon raw materials, wafer cost is high and reduce the factors such as production cost, existing technical foundation must improve the electricity conversion of solar module, i.e. high efficiency solar module.It is appreciated that the efficiency of solar components is not only subject to the impact of light efficiency, the temperature of assembly can produce larger impact to generating efficiency equally.
Summary of the invention
For solving the problem, the invention discloses silicon solar assembly, to have modular construction firm stable, and Solar use efficiency is high, and generating efficiency is high, has good heat dispersion, long service life simultaneously, stablizes, be not easily damaged in life span internal efficiency.
Silicon solar assembly disclosed by the invention, comprise toughened glass layer, EVA layer I, silicon layer (can select monocrystalline silicon or polysilicon according to product needed, form suitable wafer or thin layer, wherein thin layer can be the flexible thin layer of silicon doping high polymer or rigidity thin layer), EVA layer II and backboard
Toughened glass layer, its outer surface also plating has at least one deck anti-reflection film, and the thickness of described every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm;
EVA layer II, it is that (namely EVA layer I does not do the part be directly exposed to when covering process in air to exposed surface in product structure, lower with) be coated with oxygen barrier layer (oxygen barrier layer be seal there is oxygen obstruction ability thin layer, lower with) height to dispel the heat thermally-stabilised modified EVA plastic layer;
Backboard, it is the sandwich construction be made up of the film of multilayer or plate;
Wherein, the value of n be selected from 0,1,2,3,4,5.......
By arranging oxygen barrier layer exposing surface, EVA layer II is placed in a protective structure with good oxygen-barrier ability be jointly made up of oxygen barrier layer, toughened glass layer, silicon layer and backboard etc., thus from from encapsulation just can effectively isolated environment oxygen on the impact of resin structure and erosion, reduce the occurrence probability of deterioration by oxidation, delay the aging of material, the use of antioxidant in resin material can also be reduced simultaneously, and reduce the cost produced and apply.
Mainly through from raising photon absorption efficiency and radiating efficiency in the present invention program, thus light source and temperature control two aspects to control optical energy loss, thus improve the transformation efficiency of assembly, improve the power output of solar cell.Multilayer back board structure is conducive to controlling the reflection being irradiated to backboard co-relation in addition, be also convenient to improve distributing of heat, thus the many aspects of system improves the conversion efficiency of assembly simultaneously.
The one of silicon solar assembly disclosed by the invention is improved, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1-2 part, heat stabilizer 0.2-0.5 part, thermal conducting agent 5-10 part, phenyl vinyl polysiloxane 15-20 part.
The one of silicon solar assembly disclosed by the invention is improved, the height of EVA layer II thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat comprises through the pretreated porous material of coupling agent, described porous material comprises porous oxidation zinc powder and porous oxidation aluminium powder, and in thermal conducting agent, its composition comprises (with weight parts) porous oxidation zinc powder 10-20 part; Porous oxidation aluminium powder 20-30 part.
The one of silicon solar assembly disclosed by the invention is improved, and the height of EVA layer II porous material of thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat also comprises through coupling agent pretreated Al-Mg alloy foam powder (with weight parts) 10-15 part.
From Semiconductor Physics theory, the diffusion coefficient of charge carrier slightly increases with the rising of temperature, and therefore, photogenerated current IL also increases to some extent with the rising of temperature.But Io is that index increases with the rising of temperature, and thus Uoc sharply declines with the rising of temperature.Thus, when the temperature increases, I-U tracing pattern changes, and fill factor, curve factor declines, therefore light/photoelectric transformation efficiency declines with the increase of temperature.
Show with test after deliberation, the rising of solar cell working temperature can cause a small amount of increase of short circuit current, and causes open circuit voltage that serious reduction occurs.Why large variations in temperature for the impact of open circuit voltage, is because the energy gap of open circuit voltage directly with the semi-conducting material manufacturing battery is relevant, and energy gap can variation with temperature and changing.For silicon materials, energy gap variation with temperature rate is about-0.003eV/ DEG C, thus causes open circuit voltage variations rate to be about-2mV/ DEG C.That is, the working temperature of battery often raises 1 DEG C, and open circuit voltage about declines 2mV, is approximately 0.4% of 0.55V during normal room temperature.Along with the rising of temperature, the not bad continuous decrease of photoelectric conversion efficiency of battery.This shows that temperature control is to the importance of solar battery efficiency and outstanding meaning.
By the porous material with loose structure arranged, contacted fully with resin material by loose structure in EVA layer II, greatly increase heat radiation and heat transfer area, thus be beneficial to the heat improved assembly produces and conduct in time and distribute, be conducive to the control to temperature, reduce temperature factor to the impact of assembly generating efficiency, the heat ageing speed of product can also be reduced simultaneously, thus increase the service life, reduce application cost.
The one of silicon solar assembly disclosed by the invention is improved, and coupling agent preliminary treatment is for fully to infiltrate porous material through coupling agent solution steam, and the degree of infiltration is porous material surface formation coupling agent thin layer after solvent is evaporated.
The one of silicon solar assembly disclosed by the invention is improved, and coupling agent solution is that coupling agent to be dissolved in solvent uniformly solution equably, and under the status of criterion, the viscosity of coupling agent solution is 1-10Pa.s.
By the mode adopting coupling agent solution steam to infiltrate, surface preparation is carried out to improve the compatibility of itself and EVA to porous material, which can overcome surface tension to the inhibition of liquid phase coupling agent solution when micropore infiltrates, the effective coupling agent layer of a thin layer is formed at the porous surface of porous material, thus greatly reduce to the consumption of coupling agent avoid waste, the pollution of excess of coupling agent to environment can also be reduced simultaneously, simultaneously this coupling agent thin layer also help porous material and EVA miscible time EVA enter surface micropore, the effect strengthening mechanical performance is also served while increasing the contact area raising heat transmission effect of material.
The one of silicon solar assembly disclosed by the invention is improved, and having a kind of in porous oxidation zinc powder or porous oxidation aluminium powder or Al-Mg alloy foam powder is small particle diameter powder, and all the other are Large stone powder.
The one of silicon solar assembly disclosed by the invention is improved, and the particle diameter of small particle diameter powder is 50-100 nanometer, and the particle diameter of described Large stone powder is 2-5 micron, and the particle diameter of small particle diameter powder and Large stone powder is all in the average grain diameter of more than 80% particle.
By adopting the porous oxidation zinc powder or porous oxidation aluminium powder or Al-Mg alloy foam powder with different-grain diameter size, the grating system of chinampa type can be formed in material, strengthen mechanical performance, the contact between porous oxidation zinc powder, porous oxidation aluminium powder, Al-Mg alloy foam powder and heat transfer can also be promoted fully simultaneously, improve heat-transfer effect, play the radiating effect to system.
The one of silicon solar assembly disclosed by the invention is improved, and in the sandwich construction of backboard, fits tightly between the two membranes adjacent with EVA layer II or plate.By seamless unoccupied place compact siro spinning technology between two membranes adjacent for EVA layer II or plate (fitting tightly between ground floor and the second layer in namely adjacent with EVA layer II sandwich construction) is improved heat-transfer effect, other layer now from third layer and the second layer or other (understand is between the second layer and third layer herein each other, between third layer and the 4th layer, between 4th layer and layer 5 ... gap can be there is as required, so analogize) gap of one fixed width can be there is, thus utilize the draught head of high and low temperature difference formation and form " tunnel wind " to improve radiating effect.
It is firm stable that silicon solar assembly disclosed by the invention has modular construction, light quality, reduce solar cell to erection according to conditional requirement, control two aspects to improve the conversion efficiency of solar cell from effective light and temperature, Solar use efficiency is high, and generating efficiency is high, there is good heat dispersion simultaneously, long service life, stablizes in life span internal efficiency, is not easily damaged.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.
Silicon solar assembly disclosed by the invention, comprises toughened glass layer, EVA layer I, silicon layer, EVA layer II and backboard,
Toughened glass layer, its outer surface also plating has at least one deck anti-reflection film, and the thickness of described every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm;
EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer;
Backboard, it is the sandwich construction be made up of the film of multilayer or plate;
Wherein, the value of n be selected from 0,1,2,3,4,5.......
The one of silicon solar assembly disclosed by the invention is improved, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1-2 part, heat stabilizer 0.2-0.5 part, thermal conducting agent 5-10 part, phenyl vinyl polysiloxane 15-20 part.
The one of silicon solar assembly disclosed by the invention is improved, the height of EVA layer II thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat comprises through the pretreated porous material of coupling agent, described porous material comprises porous oxidation zinc powder and porous oxidation aluminium powder, and in thermal conducting agent, its composition comprises (with weight parts) porous oxidation zinc powder 10-20 part; Porous oxidation aluminium powder 20-30 part.
The one of silicon solar assembly disclosed by the invention is improved, and the height of EVA layer II porous material of thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat also comprises through coupling agent pretreated Al-Mg alloy foam powder (with weight parts) 10-15 part.
The one of silicon solar assembly disclosed by the invention is improved, and coupling agent preliminary treatment is for fully to infiltrate porous material through coupling agent solution steam, and the degree of infiltration is porous material surface formation coupling agent thin layer after solvent is evaporated.
The one of silicon solar assembly disclosed by the invention is improved, and coupling agent solution is that coupling agent to be dissolved in solvent uniformly solution equably, and under the status of criterion, the viscosity of coupling agent solution is 1-10Pa.s.
The one of silicon solar assembly disclosed by the invention is improved, and having a kind of in porous oxidation zinc powder or porous oxidation aluminium powder or Al-Mg alloy foam powder is small particle diameter powder, and all the other are Large stone powder.
The one of silicon solar assembly disclosed by the invention is improved, and the particle diameter of small particle diameter powder is 50-100 nanometer, and the particle diameter of described Large stone powder is 2-5 micron, and the particle diameter of small particle diameter powder and Large stone powder is all in the average grain diameter of more than 80% particle.
The one of silicon solar assembly disclosed by the invention is improved, and in the sandwich construction of backboard, fits tightly between the two membranes adjacent with EVA layer II or plate.
Constructive embodiment 1
High-efficiency silicon solar assembly in the present embodiment, comprise toughened glass layer, EVA layer I, monocrystalline silicon layer (can for wafer or thin layer, down together), EVA layer II and backboard, toughened glass layer, its outer surface also plating has one deck anti-reflection film, and the thickness of every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm, anti-reflection film actual (real) thickness needs to select according to technique and actual product; EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer; Backboard, it is 2 Rotating fields, and the double-layer structure adjacent with EVA layer II fits tightly each other; Wherein, the value of n be selected from 0,1,2,3,4,5.......
Constructive embodiment 2
High-efficiency silicon solar assembly in the present embodiment, comprise toughened glass layer, EVA layer I, monocrystalline silicon layer, EVA layer II and backboard, toughened glass layer, its outer surface also plating has one deck anti-reflection film, the thickness of every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm, anti-reflection film actual (real) thickness needs to select according to technique and actual product; EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer; Backboard, it is 3-tier architecture, and the double-layer structure adjacent with EVA layer II fits tightly each other, has the gap of mean breadth 0.5mm (also can fit tightly) between third layer and the second layer; Wherein, the value of n be selected from 0,1,2,3,4,5.......
Constructive embodiment 3
High-efficiency silicon solar assembly in the present embodiment, comprise toughened glass layer, EVA layer I, monocrystalline silicon layer, EVA layer II and backboard, toughened glass layer, its outer surface also plating has two-layer anti-reflection film, the thickness of every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm, every one deck anti-reflection film actual (real) thickness needs to select according to technique and actual product; EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer; Backboard, it is 4 Rotating fields, the double-layer structure adjacent with EVA layer II fits tightly each other, there is the gap of mean breadth 0.4mm (also can fit tightly) between third layer and the second layer, between third layer and the 4th layer, have the gap of mean breadth 0.5mm (also can fit tightly); Wherein, the value of n be selected from 0,1,2,3,4,5.......
Constructive embodiment 4
High-efficiency silicon solar assembly in the present embodiment, comprise toughened glass layer, EVA layer I, monocrystalline silicon layer, EVA layer II and backboard, toughened glass layer, its outer surface also plating has two-layer anti-reflection film, the thickness of every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm, every one deck anti-reflection film actual (real) thickness needs to select according to technique and actual product; EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer; Backboard, it is 5 Rotating fields, the double-layer structure adjacent with EVA layer II fits tightly each other, the gap of mean breadth 0.4mm (also can fit tightly) is had between third layer and the second layer, there is the gap of mean breadth 0.5mm (also can fit tightly) between third layer and the 4th layer, between layer 5 and the 4th layer, have the gap of mean breadth 0.3mm (also can fit tightly); Wherein, the value of n be selected from 0,1,2,3,4,5.......
Total reflection rete, heat-conducting layer, heat dissipating layer and supporting layer etc. can be comprised at the sandwich construction of said structure embodiment dorsulum; The thickness of above anti-reflection film, total reflection film, heat-conducting layer, heat dissipating layer, supporting layer can also according to actual product need selection two layers, three layers, four layers, five layers even more multi-layered; Adjacent two layers can be that same film layer also for different kinds, as in the sandwich construction of backboard, for comprising two-layer total reflection film, can be disposed with one deck heat-conducting layer, two-layer heat dissipating layer below total reflection layer; Comprise one deck total reflection film, below total reflection layer, be provided with one deck heat dissipating layer; Comprise one deck total reflection film, below total reflection layer, be disposed with one deck heat-conducting layer, one deck heat dissipating layer; Comprise two-layer total reflection film, below total reflection layer, be provided with two-layer heat dissipating layer; Comprise two-layer total reflection film, the multiple situation of two-layer heat-conducting layer, two-layer heat dissipating layer etc. is provided with in turn below total reflection layer, supporting layer can also be increased at correct position as required, as being arranged on last one deck of backboard or layer second from the bottom etc. in the sandwich construction of simultaneously backboard; Monocrystalline silicon layer is promising polysilicon layer (with wafer or thin layer form) also.
Below about the embodiment of EVA layer II can individually or side by side be used in the technical scheme included, without being limited to described in said structure embodiment, and do not exceed the scope of application claims.
EVA layer II embodiment 1
In the present embodiment, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1.5 parts, heat stabilizer 0.2 part, thermal conducting agent 9 parts, phenyl vinyl polysiloxane 15 parts.
EVA layer II embodiment 2
In the present embodiment, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1.8 parts, heat stabilizer 0.5 part, thermal conducting agent 7 parts, phenyl vinyl polysiloxane 20 parts.
EVA layer II embodiment 3
In the present embodiment, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1.2 parts, heat stabilizer 0.35 part, thermal conducting agent 8 parts, phenyl vinyl polysiloxane 18 parts.
EVA layer II embodiment 4
In the present embodiment, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 2 parts, heat stabilizer 0.4 part, thermal conducting agent 10 parts, phenyl vinyl polysiloxane 19 parts.
EVA layer II embodiment 5
In the present embodiment, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1 part, heat stabilizer 0.3 part, thermal conducting agent 5 parts, phenyl vinyl polysiloxane 16 parts.
Ground is distinguished with EVA layer II embodiment 1-5, EVA layer II can also comprise through the pretreated porous material of coupling agent, porous material comprises porous oxidation zinc powder and porous oxidation aluminium powder, in thermal conducting agent its composition comprise (with weight parts) porous oxidation zinc powder 10 parts (can also be 11,12,13,14,15,16,17,18,19,20 and 10-20 part between other arbitrary value); Porous oxidation aluminium powder 20 parts (can also be 21,22,23,24,25,26,27,28,29,30 and 20-30 part between other arbitrary value).
With previous embodiment distinguish ground, porous material also comprise through the pretreated Al-Mg alloy foam powder (with weight parts) 10 parts of coupling agent (can also be 11,12,13,14,15,11.7,13.4,14.2 and 10-15 part between other arbitrary value).
Distinguish ground with previous embodiment, coupling agent preliminary treatment is for fully to infiltrate porous material through coupling agent solution steam, and the degree of infiltration is porous material surface formation coupling agent thin layer after solvent is evaporated.
Coupling agent solution is that coupling agent to be dissolved in solvent uniformly solution equably, under the status of criterion viscosity of coupling agent solution be 1Pa.s (can also be 2,3,4,5,6,7,8,9,10,1.22,4.33,7.8,8.9 and 1-10Pa.s within the scope of other arbitrary value).
Distinguish ground with previous embodiment, having a kind of in porous oxidation zinc powder or porous oxidation aluminium powder or Al-Mg alloy foam powder is small particle diameter powder, and all the other are Large stone powder.If porous oxidation zinc powder is small particle diameter powder, all the other are Large stone powder; Porous oxidation aluminium powder is small particle diameter powder, and all the other are Large stone powder; Al-Mg alloy foam powder is small particle diameter powder, and all the other are Large stone powder.
The particle diameter of small particle diameter powder be 50 nanometers (can also be 55,60,65,70,75,80,85,90,95,100 and 50-100 nanometer range in other arbitrary value), the particle diameter of Large stone powder be 2 microns (can also be 2.5,3,3.5,4,4.5,2.7,3.3,4.2 and 2-5 micrometer range in other arbitrary value), the particle diameter of small particle diameter powder and Large stone powder is all in the average grain diameter of more than 80% particle.
The high-efficiency silicon solar assembly that technical solution of the present invention is obtained, in Zhuhai district, Guangzhou, test point is cloudless summer, room temperature more than 30 degrees Celsius, and test under gentle breeze 1-2 level condition, photoelectric conversion efficiency is more than 26%.
With the execution mode that constructive embodiment 1 and EVA layer II embodiment 1 are formed jointly, through test, the solar cell obtained by this programme is most effective 25 degrees Celsius time, and power output is maximum; Under 25 degrees Celsius, more high power is higher to prove light intensity through test.This place conclusion is equally applicable to technical solution of the present invention and includes, without being limited to the technical scheme of above-described embodiment composition in interior all technical schemes, will not enumerate herein.
The technical scope midrange non-limit part that this place embodiment is protected application claims and in embodiment technical scheme to the new technical scheme that the equal replacement of single or multiple technical characteristic is formed, equally all in the scope of protection of present invention; Simultaneously in all embodiments enumerated or do not enumerate of the present invention program, parameters in the same embodiment only represents an example (i.e. a kind of feasible scheme) of its technical scheme, and between parameters, there is not strict cooperation and qualified relation, wherein each parameter can be replaced, except special declaration mutually when stating ask without prejudice to axiom and the present invention.
Technological means disclosed in the present invention program is not limited only to the technological means disclosed in above-mentioned technological means, also comprises the technical scheme be made up of above technical characteristic combination in any.The above is the specific embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (9)
1. silicon solar assembly, comprises toughened glass layer, EVA layer I, silicon layer, EVA layer II and backboard, it is characterized in that:
Toughened glass layer, its outer surface also plating has at least one deck anti-reflection film, and the thickness of described every one deck anti-reflection film is d, and d=(n+0.25) λ, wherein λ=400-760nm;
EVA layer II, it to dispel the heat thermally-stabilised modified EVA plastic layer for height that exposed surface is coated with oxygen barrier layer;
Backboard, it is the sandwich construction be made up of the film of multilayer or plate;
Wherein, the value of n be selected from 0,1,2,3,4,5.......
2. silicon solar assembly according to claim 1, it is characterized in that, the dispel the heat composition of thermally-stabilised modified EVA plastic layer of the height of described EVA layer II comprises (with parts by weight): ethylene-vinyl acetate copolymer 100 parts, crosslinking and curing agent 1-2 part, heat stabilizer 0.2-0.5 part, thermal conducting agent 5-10 part, phenyl vinyl polysiloxane 15-20 part.
3. silicon solar assembly according to claim 2, it is characterized in that, the height of described EVA layer II thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat comprises through the pretreated porous material of coupling agent, described porous material comprises porous oxidation zinc powder and porous oxidation aluminium powder, and in thermal conducting agent, its composition comprises (with weight parts) porous oxidation zinc powder 10-20 part; Porous oxidation aluminium powder 20-30 part.
4. silicon solar assembly according to claim 2, it is characterized in that, the height of described EVA layer II porous material of thermal conducting agent in thermally-stabilised modified EVA plastic layer that dispels the heat also comprises through coupling agent pretreated Al-Mg alloy foam powder (with weight parts) 10-15 part.
5. the silicon solar assembly according to claim 3 or 4, is characterized in that, described coupling agent preliminary treatment is for fully to infiltrate porous material through coupling agent solution steam, and the degree of infiltration is porous material surface formation coupling agent thin layer after solvent is evaporated.
6. the silicon solar assembly according to claim 3 or 4, is characterized in that, described coupling agent solution is that coupling agent to be dissolved in solvent uniformly solution equably, and under the status of criterion, the viscosity of coupling agent solution is 1-10Pa.s.
7. the silicon solar assembly according to claim 3 or 4, is characterized in that, having a kind of in described porous oxidation zinc powder or porous oxidation aluminium powder or Al-Mg alloy foam powder is small particle diameter powder, and all the other are Large stone powder.
8. silicon solar assembly according to claim 7, it is characterized in that, the particle diameter of described small particle diameter powder is 50-100 nanometer, and the particle diameter of described Large stone powder is 2-5 micron, and the particle diameter of small particle diameter powder and Large stone powder is all in the average grain diameter of more than 80% particle.
9. silicon solar assembly according to claim 1, is characterized in that, in the sandwich construction of described backboard, fits tightly between the two membranes adjacent with EVA layer II or plate.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102702611A (en) * | 2012-06-15 | 2012-10-03 | 昆山聚威工程塑料有限公司 | Thermally conductive ethylene-vinyl acetate EVA material applied to solar cell |
| CN103342856A (en) * | 2013-07-09 | 2013-10-09 | 昆山天洋热熔胶有限公司 | Preparation method of filler thermally conductive composite EVA (ethylene vinyl acetate copolymer) adhesive film for encapsulating solar cell |
| CN103725212A (en) * | 2013-12-14 | 2014-04-16 | 宁波华丰包装有限公司 | High transparency EVA (ethylene-vinyl acetate) encapsulation adhesive film and preparation method thereof |
| CN103872162A (en) * | 2014-03-18 | 2014-06-18 | 连云港神舟新能源有限公司 | Low-working-temperature solar cell module |
| CN103943691A (en) * | 2014-04-15 | 2014-07-23 | 浙江冠旗纳米科技有限公司 | Self-cleaning solar cell anti-reflective coating |
| CN104395241A (en) * | 2012-07-02 | 2015-03-04 | 日本碍子株式会社 | Zinc oxide powder and process for manufacturing same |
-
2015
- 2015-07-28 CN CN201510447514.6A patent/CN105023963A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102702611A (en) * | 2012-06-15 | 2012-10-03 | 昆山聚威工程塑料有限公司 | Thermally conductive ethylene-vinyl acetate EVA material applied to solar cell |
| CN104395241A (en) * | 2012-07-02 | 2015-03-04 | 日本碍子株式会社 | Zinc oxide powder and process for manufacturing same |
| CN103342856A (en) * | 2013-07-09 | 2013-10-09 | 昆山天洋热熔胶有限公司 | Preparation method of filler thermally conductive composite EVA (ethylene vinyl acetate copolymer) adhesive film for encapsulating solar cell |
| CN103725212A (en) * | 2013-12-14 | 2014-04-16 | 宁波华丰包装有限公司 | High transparency EVA (ethylene-vinyl acetate) encapsulation adhesive film and preparation method thereof |
| CN103872162A (en) * | 2014-03-18 | 2014-06-18 | 连云港神舟新能源有限公司 | Low-working-temperature solar cell module |
| CN103943691A (en) * | 2014-04-15 | 2014-07-23 | 浙江冠旗纳米科技有限公司 | Self-cleaning solar cell anti-reflective coating |
Non-Patent Citations (2)
| Title |
|---|
| 李路海: "《印刷包装功能材料》", 31 January 2013, 中国轻工业出版社 * |
| 王祝堂: "《汽车用铝材手册》", 30 September 2012, 中南大学出版社 * |
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