CN105016763A - Method for connecting TiAl-base alloy and Ti3SiC2 ceramic - Google Patents

Method for connecting TiAl-base alloy and Ti3SiC2 ceramic Download PDF

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Publication number
CN105016763A
CN105016763A CN201510451080.7A CN201510451080A CN105016763A CN 105016763 A CN105016763 A CN 105016763A CN 201510451080 A CN201510451080 A CN 201510451080A CN 105016763 A CN105016763 A CN 105016763A
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China
Prior art keywords
tial
base alloy
sic
middle layer
pottery
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CN201510451080.7A
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Chinese (zh)
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陈国清
王琪
于铁
付雪松
付连生
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Dalian University of Technology
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Dalian University of Technology
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Abstract

The invention discloses a method for connecting a TiAl-base alloy and a Ti3SiC2 ceramic, which is characterized in that Al is used as a middle layer, and the TiAl-base alloy is connected with the Ti3SiC2 ceramic by an instantaneous liquid-phase diffusion connection technique. The method comprises the following steps: processing to obtain a test sample to be connected, and polishing and cleaning the surface to be connected; adding the Al middle layer between the TiAl-base alloy and the surface to be connected of the Ti3SiC2 ceramic to constitute an assembly part, wherein the Al middle layer can adopt Al foil or Al powder, or a metal Al layer is prepared on the connection surface of a certain matrix by hot spraying or magnetron sputtering to obtain the middle layer; and putting the assembly part into a vacuum hot press, heating to the connection temperature, and keeping the temperature for some time to perform diffusion connection. The method implements connection between the TiAl-base alloy and Ti3SiC2 ceramic, has the advantage of low energy consumption, and can easily implement industrialization.

Description

A kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery
Technical field
The present invention relates to a kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery.
Background technology
TiAl-base alloy has lightweight, high specific strength, high specific stiffness, and there is excellent normal temperature and mechanical behavior under high temperature, use temperature can reach 700 ~ 1000 DEG C, become one of the good candidates high-temperature structural material in the fields such as contemporary aircraft industry, weapon industry and civilian industry, there is huge through engineering approaches application potential.
Ti 3siC 2be a kind of _ 2 Ceramics material, have many premium propertiess of metal and pottery concurrently, possess high thermal conductivity and specific conductivity, easily process, there is good heat-shock resistance, oxidation-resistance and high-temperature stability simultaneously.Good application prospect is had in fields such as high-temperature structural ceramics, electrode materials, processable ceramics material and self-lubricating materials.
Due to TiAl-base alloy and Ti 3siC 2pottery has unique premium properties separately, and both advantages can be complementary, and the method for attachment studying this bi-material has obvious meaning for Novel air sky material.Particularly for the composite component of bi-material composition, component specific tenacity, creep-resistant property and antioxidant property can be improved significantly, have a good application prospect.In addition, above-mentioned bi-material is formed matrix material after connecting, can as the Novel air sky material used under severe rugged environment.Such as, the TiAl/Ti obtained is connected by diffusion 3siC 2composition board not only inherits the advantage of TiAl-base alloy low density and good properties at high temperature, also solves TiAl-base alloy simultaneously and wears no resistance and the problem of high-temperature oxidation resistance deficiency.TiAl/Ti 3siC 2metal-ceramic composition board can be used as the harsh working conditions of satisfied following re-entry space vehicle outside endoatmosphere and the multiplex universal novel material of the material designed.
But the technical barrier that the perfect adaptation of bi-material is this area not to have solved always, be therefore necessary to provide a kind of interconnection technique, this kind of matrix material can be made full use of.
Summary of the invention
According to TiAl-base alloy and the Ti of above-mentioned proposition 3siC 2pottery is difficult to the technical problem connected, and provides a kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery.The present invention mainly utilizes Al to spread connection as the transient liquid phase (Transient Liquid Phase-TLP) in middle layer and realizes TiAl-base alloy and Ti 3siC 2ceramic joining.
The technique means that the present invention adopts is as follows:
A kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery, is characterized in that: adopt Al as middle layer, by TLP diffusion bonding technology by TiAl-base alloy and Ti 3siC 2ceramic joining.
Further, described middle layer adopts Al paper tinsel or Al powder, or at TiAl-base alloy or Ti 3siC 2to be connected upper thermospray of pottery or magnetron sputtering layer of metal Al are as middle layer.
Further, described TiAl-base alloy and Ti 3siC 2the method of attachment of pottery, is characterized in that comprising the steps:
S1, by TiAl-base alloy and Ti 3siC 2pottery respectively processing obtains TiAl-base alloy test specimen to be connected and Ti 3siC 2ceramic test piece, then to described TiAl-base alloy test specimen and Ti 3siC 2polished finish is carried out in the face to be connected of ceramic test piece, then puts into acetone ultrasonic cleaning;
S2, at TiAl-base alloy test specimen and Ti 3siC 2add Al as middle layer between to be connected of ceramic test piece, be combined into TiAl-base alloy test specimen-Al middle layer-Ti 3siC 2the assembly parts of ceramic test piece;
S3, be placed in vacuum hot pressing device by described assembly parts, then electrified regulation carries out diffusion and connects.
Further, in described step S3, whole heating and pressurizing process is as follows:
1) temperature rise period: carry out being warmed up to 650 ~ 950 DEG C with the speed of 10 ~ 40 DEG C/min, temperature rise period pressure is 0 ~ 5MPa;
2) holding stage: 650 ~ 900 DEG C of insulations after the temperature rise period terminates, soaking time is 10 ~ 120min, the pressure of holding stage is 5 ~ 50MPa;
3) temperature-fall period: after being incubated, web member furnace cooling, controlled cooling model speed is not more than 30 DEG C/min.
Further, when described middle layer be Al paper tinsel or formed after thermospray or magnetron sputtering Rotating fields time, described intermediate layer thickness is 5 μm ~ 500 μm, and purity is 92% ~ 99.99%, and surfaceness is Ra1.6 ~ Ra0.08; When described middle layer is Al powder, the granularity of described Al powder is 40-400 order, and purity is 92% ~ 99.99%.
Selection of the present invention and TiAl-base alloy and Ti 3siC 2pottery has the metal A l of good wettability as intermediate layer material.Due to the main component that Al is TiAl-base alloy, Al to diffuse in TiAl-base alloy can with formation TiAl 2and TiAl 3phase, has good binding ability with TiAl-base alloy.And Al diffuses into Ti 3siC 2in can replace Ti 3siC 2in Si atom, formed Ti 3alC 2, with Ti 3siC 2structural similitude, is easy to connect, simultaneously Ti 3siC 2in Si diffuse into Al middle layer and can generate eutectic phase, strengthening Al middle layer.By Al and TiAl-base alloy and Al and Ti 3siC 2the diffusion-bonded of pottery realizes TiAl-base alloy and Ti 3siC 2the connection of pottery.
The present invention connects TiAl-base alloy and Ti relative to directly spreading 3siC 2have the following advantages:
Time more than 680 DEG C, the Al as middle layer has been in liquid, and activity is higher, and energy and matrix rapid reaction, can shorten soaking time, reduces connection temperature required; Simultaneously liquid Al has mobility, treat the good filling properties of hole on joint face, and can very well by the flowing of Al middle layer when liquid state and solid-state time viscous deformation reduce welded stress, the cracking avoiding welded stress to cause and joint performance are deteriorated.Therefore, TLP diffusion bonding can shorten soaking time relative to directly spreading connection, reduces and connects temperature, and pressure required during reduction diffusion connection, is beneficial to and realizes suitability for industrialized production and reduce production cost.The present invention adopts composite interlayer to spread with other to be connected TiAl-base alloy and Ti 3siC 2the method of pottery is compared, and has Interlayer Alloy single, and preparation technology is simple, cheap, is easy to realize industrialized advantage.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the structural representation of assembly parts of the present invention.
Fig. 2 is that the present invention adopts Al paper tinsel or Al powder to form the schematic diagram of assembly parts.
Fig. 3 is the structural representation of the present invention in the Al middle layer that TiAl-base alloy surface of test piece is formed after thermospray or magnetron sputtering.
Fig. 4 is that the present invention is at Ti 3siC 2the structural representation in the Al middle layer that ceramic test piece surface is formed after thermospray or magnetron sputtering.
In figure: 1, TiAl-base alloy test specimen 2, Ti 3siC 2ceramic test piece 3, Al middle layer
Embodiment
A kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery, adopts Al as middle layer, by TLP diffusion bonding technology by TiAl-base alloy and Ti 3siC 2ceramic joining.
Described middle layer adopts Al paper tinsel or Al powder, or at TiAl-base alloy or Ti 3siC 2to be connected upper thermospray of pottery or magnetron sputtering layer of metal Al are as middle layer.
Embodiment 1
As shown in Fig. 1, Fig. 2, a kind of TiAl-base alloy and Ti 3siC 2the method of attachment of pottery, comprises the steps:
S1, by TiAl-base alloy and Ti 3siC 2pottery obtains the TiAl-base alloy test specimen 1 of the 10m of being of a size of to be connected × 10m × 3mm by Wire-cut Electrical Discharge Machining respectively and is of a size of the Ti of 11m × 11m × 3mm 3siC 2ceramic test piece 2, then to described TiAl-base alloy test specimen 1 and Ti 3siC 2to be connected of ceramic test piece 2 adopts the sand paper of 200#, 400#, 600#, 1000# to grind the polishing of rear use 1.5 μm of diamond polishing cream step by step, then puts into acetone ultrasonic cleaning 5min ~ 20min, preferably clean 15min;
S2, Al paper tinsel is added TiAl-base alloy test specimen 1 and Ti as middle layer 3 3siC 2between to be connected of ceramic test piece 2, be combined into TiAl-base alloy test specimen 1-Al middle layer 3-Ti 3siC 2the assembly parts of ceramic test piece 2, wherein Al middle layer 3 thickness is 100 μm, and purity is 99.99%, and surfaceness is Ra0.2, carries out ultrasonic cleaning before putting into;
S3, be placed in hot-pressed sintering furnace by described assembly parts, be first evacuated down to below 30Pa, then be filled with the argon shield of 20Kpa, then electrified regulation carries out diffusion and connects.
Whole heating and pressurizing process is as follows:
1) temperature rise period: carry out being warmed up to 800 DEG C with the speed of 10 ~ 40 DEG C/min, temperature rise period pressure is 3MPa;
2) holding stage: 800 DEG C of insulations after the temperature rise period terminates, soaking time is 30min, the pressure of holding stage is 10MPa;
3) temperature-fall period: after being incubated, web member furnace cooling, controlled cooling model speed is not more than 30 DEG C/min.
The TiAl-base alloy obtained as the TLP diffusion bonding in middle layer 3 by Al and Ti 3siC 2the web member of pottery, the joint of testing the web member obtained is without macrocrack, and through the test of room temperature shearing resistance, the shear strength obtaining joint is 18.7MPa.
Embodiment 2
The present embodiment, as different from Example 1 in S2, does not adopt Al paper tinsel as middle layer 3, but adopts Al powder to be layered on to be connected centre as middle layer 3, wherein the granularity of Al powder be 40 orders to 400 orders, purity is 92 ~ 99.99%.
Embodiment 3
The present embodiment, as different from Example 1 in S2, does not adopt Al paper tinsel as middle layer 3, but at TiAl-base alloy test specimen 1 (or Ti 3siC 2ceramic test piece 2) to be connected upper magnetron sputtering or thermospray layer of metal Al as middle layer 3 (as shown in Figure 3, Figure 4), wherein the thickness in Al middle layer 3 is 5 μm ~ 500 μm, and other conditions are identical with embodiment 1.
Embodiment 4
The present embodiment, as different from Example 1 in S3, is evacuated down to 1 × 10 -1below Pa, be not filled with argon gas as protection, other conditions are identical with embodiment 1.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; be equal to according to technical scheme of the present invention and inventive concept thereof and replace or change, all should be encompassed within protection scope of the present invention.

Claims (5)

1. a TiAl-base alloy and Ti 3siC 2the method of attachment of pottery, is characterized in that: adopt Al as middle layer, by TLP diffusion bonding technology by TiAl-base alloy and Ti 3siC 2ceramic joining.
2. TiAl-base alloy according to claim 1 and Ti 3siC 2the method of attachment of pottery, is characterized in that: described middle layer adopts Al paper tinsel or Al powder, or at TiAl-base alloy or Ti 3siC 2to be connected upper thermospray of pottery or magnetron sputtering layer of metal Al are as middle layer.
3. TiAl-base alloy according to claim 1 and 2 and Ti 3siC 2the method of attachment of pottery, is characterized in that comprising the steps:
S1, by TiAl-base alloy and Ti 3siC 2pottery respectively processing obtains TiAl-base alloy test specimen to be connected and Ti 3siC 2ceramic test piece, then to described TiAl-base alloy test specimen and Ti 3siC 2polished finish is carried out in the face to be connected of ceramic test piece, then puts into acetone ultrasonic cleaning;
S2, at TiAl-base alloy test specimen and Ti 3siC 2add Al as middle layer between to be connected of ceramic test piece, be combined into TiAl-base alloy test specimen-Al middle layer-Ti 3siC 2the assembly parts of ceramic test piece;
S3, be placed in vacuum hot pressing device by described assembly parts, then electrified regulation carries out diffusion and connects.
4. TiAl-base alloy according to claim 3 and Ti 3siC 2the method of attachment of pottery, is characterized in that: in described step S3, whole heating and pressurizing process is as follows:
1) temperature rise period: carry out being warmed up to 650 ~ 950 DEG C with the speed of 10 ~ 40 DEG C/min, temperature rise period pressure is 0 ~ 5MPa;
2) holding stage: 650 ~ 900 DEG C of insulations after the temperature rise period terminates, soaking time is 10 ~ 120min, the pressure of holding stage is 5 ~ 50MPa;
3) temperature-fall period: after being incubated, web member furnace cooling, controlled cooling model speed is not more than 30 DEG C/min.
5. TiAl-base alloy according to claim 3 and Ti 3siC 2pottery method of attachment, it is characterized in that: when described middle layer be Al paper tinsel or formed after thermospray or magnetron sputtering Rotating fields time, described intermediate layer thickness is 5 μm ~ 500 μm, and purity is 92% ~ 99.99%, and surfaceness is Ra1.6 ~ Ra0.08; When described middle layer is Al powder, the granularity of described Al powder is 40-400 order, and purity is 92% ~ 99.99%.
CN201510451080.7A 2015-07-27 2015-07-27 Method for connecting TiAl-base alloy and Ti3SiC2 ceramic Pending CN105016763A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107916349A (en) * 2017-11-10 2018-04-17 燕山大学 A kind of TiAl based high-temp-resistants self-lubricating composite and preparation method
CN108947558A (en) * 2017-05-27 2018-12-07 天津大学 A kind of metal and Ti3SiC2The connection method of ceramics
CN114029601A (en) * 2021-12-09 2022-02-11 哈尔滨工业大学 Method for diffusion bonding of Ti3SiC2 ceramic by adopting gold foil intermediate layer at low temperature
CN114180983A (en) * 2020-09-15 2022-03-15 中国科学院金属研究所 Ternary layered ceramic titanium silicon carbon based on Zn foil interlayer and diffusion connection method of solid solution of ternary layered ceramic titanium silicon carbon and ferritic stainless steel
CN114180982A (en) * 2020-09-15 2022-03-15 青岛大学 Diffusion connection method of ternary layered ceramic titanium silicon carbon based on Al foil interlayer and solid solution thereof and ferritic stainless steel

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Publication number Priority date Publication date Assignee Title
CN101096316A (en) * 2006-06-30 2008-01-02 中国科学院金属研究所 Instant liquid-phase pervasion jointing ternary layered ceramic titanium carbon silicification technique
CN102151981A (en) * 2011-04-28 2011-08-17 哈尔滨工业大学 Method for realizing TiAl-based alloy connection by adopting Al foil as intermediate layer
CN103204694A (en) * 2013-04-03 2013-07-17 哈尔滨工业大学 Method for diffusely connecting TiAl-based alloy and Ti3AlC2 ceramic by adopting Zr/Ni composite intermediate layer
CN104057667A (en) * 2014-05-16 2014-09-24 大连理工大学 TiAl/Ti3SiC2 composite plate material and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101096316A (en) * 2006-06-30 2008-01-02 中国科学院金属研究所 Instant liquid-phase pervasion jointing ternary layered ceramic titanium carbon silicification technique
CN102151981A (en) * 2011-04-28 2011-08-17 哈尔滨工业大学 Method for realizing TiAl-based alloy connection by adopting Al foil as intermediate layer
CN103204694A (en) * 2013-04-03 2013-07-17 哈尔滨工业大学 Method for diffusely connecting TiAl-based alloy and Ti3AlC2 ceramic by adopting Zr/Ni composite intermediate layer
CN104057667A (en) * 2014-05-16 2014-09-24 大连理工大学 TiAl/Ti3SiC2 composite plate material and preparation method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108947558A (en) * 2017-05-27 2018-12-07 天津大学 A kind of metal and Ti3SiC2The connection method of ceramics
CN107916349A (en) * 2017-11-10 2018-04-17 燕山大学 A kind of TiAl based high-temp-resistants self-lubricating composite and preparation method
CN114180983A (en) * 2020-09-15 2022-03-15 中国科学院金属研究所 Ternary layered ceramic titanium silicon carbon based on Zn foil interlayer and diffusion connection method of solid solution of ternary layered ceramic titanium silicon carbon and ferritic stainless steel
CN114180982A (en) * 2020-09-15 2022-03-15 青岛大学 Diffusion connection method of ternary layered ceramic titanium silicon carbon based on Al foil interlayer and solid solution thereof and ferritic stainless steel
CN114180983B (en) * 2020-09-15 2022-09-06 中国科学院金属研究所 Ternary layered ceramic titanium silicon carbon based on Zn foil interlayer and diffusion connection method of solid solution of ternary layered ceramic titanium silicon carbon and ferritic stainless steel
CN114180982B (en) * 2020-09-15 2022-12-20 青岛大学 Diffusion connection method of ternary layered ceramic titanium silicon carbon and solid solution thereof and ferritic stainless steel based on Al foil interlayer
CN114029601A (en) * 2021-12-09 2022-02-11 哈尔滨工业大学 Method for diffusion bonding of Ti3SiC2 ceramic by adopting gold foil intermediate layer at low temperature
CN114029601B (en) * 2021-12-09 2023-02-28 哈尔滨工业大学 Method for low-temperature diffusion connection of Ti3SiC2 ceramic by adopting gold foil intermediate layer

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Application publication date: 20151104