CN105585326A - Technology for diffusion connection of SiC ceramic matrix composite through nano foil - Google Patents

Technology for diffusion connection of SiC ceramic matrix composite through nano foil Download PDF

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CN105585326A
CN105585326A CN201510983420.0A CN201510983420A CN105585326A CN 105585326 A CN105585326 A CN 105585326A CN 201510983420 A CN201510983420 A CN 201510983420A CN 105585326 A CN105585326 A CN 105585326A
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ceramic matrix
temperature
foil
sic
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CN105585326B (en
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熊华平
陈波
李文文
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中国航空工业集团公司北京航空材料研究院
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/006Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/365Silicon carbide

Abstract

The invention relates to a technology for diffusion connection of a SiC ceramic matrix composite through nano foil and belongs to the technical field of welding manufacturing. Because ceramic and ceramic matrix composites are poorer in processing performance and weak in heat shock resistance, traditional Ag-Cu-Ti and Cu-Ti system active solders are commonly used at home and abroad for brazing connection in connection of the ceramic or ceramic matrix composites, but the heat-resistant temperature of corresponding joints hardly exceed 500 DEG C. According to the connection method for the SiC ceramic matrix composite, low-temperature activation connection is realized and joints are high-temperature-resistant, the foil formed by alternately stacking Ti and Al layers of nanoscale thickness is adopted as the solder, connection of the SiC ceramic matrix composite is realized with a hot-pressed sintering method, the obtained connection joints are high in room temperature strength, and 75% or more of the room temperature strength of the joints can be stabilized at the high temperature of 1,100 DEG C.

Description

一种纳米箔带扩散连接碳化硅陶瓷基复合材料的工艺 Nano foil tape connected to a diffusion process of the silicon carbide ceramic matrix composites

技术领域 FIELD

[0001]本发明涉及一种纳米箔带扩散连接碳化硅陶瓷基复合材料的工艺,属于焊接制造技术领域。 [0001] The present invention relates to a diffusion process with a nano foil connected silicon carbide based composite material, belonging to the technical field of manufacturing welding.

背景技术 Background technique

[0002]陶瓷、陶瓷基复合材料是很有应用前途的高温结构陶瓷材料,近年来尤其以碳化硅陶瓷(SiC),碳纤维增强碳化硅陶瓷基复合材料(Cf/SiC),和碳化硅纤维增强碳化硅陶瓷基复合材料(SiCf/SiC),以及硅/碳化硅陶瓷基复合材料(Si/SiC)是高温结构陶瓷材料中比较典型的代表。 [0002] ceramics, ceramic matrix composites is the high temperature structural ceramics applications very promising in recent years, in particular silicon carbide ceramic (SiC), carbon-fiber reinforced silicon carbide ceramic matrix composites (Cf / SiC), and silicon carbide fiber reinforced SiC ceramic matrix composites (SiCf / SiC), and silicon / silicon carbide ceramic matrix composites (Si / SiC) is a high-temperature structural ceramic material typical representative.

[0003]但由于陶瓷及陶瓷基复合材料的加工性能较差、耐热冲击能力弱,以及制造尺寸大而且形状复杂的零件较为困难等缺点,通常需要通过陶瓷及陶瓷基复合材料自身的连接来实现复杂构件的制造,并且连接接头必须满足耐高温的使用要求。 [0003] However, since the ceramic and ceramic matrix composites poor workability, low thermal shock capability and a large size and is difficult to manufacture parts of complex shape and other shortcomings, the composite material typically requires its own connection to the ceramic and ceramic matrix achieve fabrication of complex components and connection joints must meet the high temperature requirements.

[0004]应当说,陶瓷材料属于难焊接材料,国内外在陶瓷或陶瓷基复合材料的连接中,普遍使用传统的Ag-Cu-T1、Cu_Ti系活性钎料进行钎焊连接,但相应的接头耐热温度很难超过500°C<Xu-Pd-V、Au-Cu-Pd-V等活性钎料也可用于碳纤维增强碳化硅陶瓷基复合材料的连接,但接头的耐热温度也不超过800°C。 [0004] It should be said that the ceramic material is of hard solder material, in home and abroad ceramic or ceramic composite material based connection, it is common to use a conventional Ag-Cu-T1, Cu_Ti based active brazing solder connection, but the corresponding linker difficult to exceed a heat resistance temperature 500 ° C <Xu-Pd-V, Au-Cu-Pd-V activity and the like can also be used a solder connecting carbon fiber reinforced silicon carbide ceramic matrix composites, but the joint does not exceed the heat resistant temperature 800 ° C. 陶瓷连接技术公开报道的还有使用Ni基钎料合金钎焊陶瓷基复合材料的研究结果,但自身接头室温弯曲强度只有58 MPa左右,远低于被焊母材。 Ceramic joining techniques disclosed also reported the use of Ni-based brazing alloy brazing results of ceramic matrix composites, but the room temperature flexural strength of the joint itself is only about 58 MPa, much lower than the base metal being welded. 目前针对SiC陶瓷基复合材料尚缺乏适用的高温连接焊料和合适的耐高温连接工艺。 Currently SiC ceramic matrix composites for lack of suitable high-temperature solder connection, and a suitable high-temperature joining process.

[0005]近年来也有采用在含有碳的坯体中熔渗入硅的反应方法进行碳化硅陶瓷的连接报道,但是焊料的前期处理过程以及连接工艺复杂,连接温度高达1400°C以上,一方面焊接过程能源消耗大,另一方面接头中渗入硅未完全反应的残留量不可控,因此连接接头性能不稳定。 [0005] In recent years, there is also the reaction process in the body contains carbon infiltrating the silicon carbide ceramic is connected reported, but the pre-process and solder joining process is complicated, the bonding temperature up to 1400 ° C, on the one hand welding process energy consumption, on the other hand the amount of residual silicon joint infiltration incomplete reaction uncontrollable, and therefore unstable connection joint. 此外,上述方法因为连接温度太高,无法适用于SiC陶瓷与金属的连接。 Further, the temperature is too high because the connection method, the connection can not be applied to SiC ceramic and metal. 而且,对于碳化硅陶瓷基复合材料,比如Cf/SiC陶瓷基复合材料,SiCf/SiC陶瓷基复合材料,或者Si/SiC陶瓷基复合材料,因为复合材料的组分更加复杂,它们的连接技术比起SiC陶瓷更为复杂,目前没有简易、实用并且质量可控的耐高温连接的工艺方法。 Further, silicon carbide ceramic matrix composites, such as Cf / SiC ceramic matrix composites, SiCf / SiC ceramic matrix composites, or Si / SiC ceramic matrix composites, as component of the composite is more complex than their connection technique since SiC ceramics is more complex, there is no easy, practical and controllable high-temperature process for quality connection.

发明内容 SUMMARY

[0006]本发明所要解决的技术问题是:针对上述技术需求和现有技术的不足,提供一种可用于碳化硅陶瓷基复合材料的SiC陶瓷基复合材料的低温活化连接、接头耐高温的连接方法。 [0006] The present invention solves the technical problem are: low temperature less than the above technical requirements for the activation and the prior art, to provide a silicon carbide ceramic matrix composites for SiC ceramic matrix composites of the connecting joint connecting the high-temperature method.

[0007] 这里SiC陶瓷基复合材料包括SiC陶瓷、Cf/SiC陶瓷基复合材料、SiCf/SiC陶瓷基复合材料或者Si/SiC陶瓷基复合材料。 [0007] Here SiC SiC ceramic matrix composite comprising a ceramic, Cf / SiC ceramic matrix composites, SiCf / SiC ceramic matrix composite or Si / SiC ceramic matrix composites.

[0008]本发明的技术解决方案是,一种纳米箔带扩散连接碳化硅陶瓷基复合材料的工艺,该工艺包括以下步骤:首先,制备纳米级厚度的Ti和Al金属层交替叠加的箔带;其次,以所述纳米箔带作为焊料,将其置于被焊接的SiC陶瓷基复合材料之间,采用真空扩散焊或者真空-氩气条件下的热压烧结方法,温度为1000°C〜1250 °C,压力为10MPa〜30MPa,实现碳化硅陶瓷基复合材料的连接。 [0008] The technical solutions of the present invention is a process of a nano composite material diffusion bonded SiC ceramic foil group, the process comprising the following steps: First, Ti and Al metal layer prepared nanoscale thickness are alternately stacked foil ; Secondly, as the nano-solder foil, placed between the SiC ceramic matrix composite material is welded, vacuum or a vacuum diffusion bonding - hot pressing sintering under conditions of an argon gas, a temperature of 1000 ° C~ 1250 ° C, a pressure of 10MPa~30MPa, connected achieve silicon carbide based composite material.

[0009] 所述纳米箔带中每个金属层的厚度为15nm〜100]1111,总厚度为3(^1]1〜10(^111。 [0009] The nano metal foil layer has a thickness of each of 15nm~100] 1111, a total thickness of 3 (^ 1] 1~10 (^ 111.

[0010]所述的热压烧结为热压放电等离子烧结。 [0010] The hot press sintering said spark plasma sintering hot press.

[0011]真空扩散焊或者真空-氩气条件下的热压烧结,高温反应连接时间为3〜60分钟。 [0011] Vacuum or vacuum diffusion bonding - hot pressing sintering under conditions of an argon gas, the reaction temperature is 3~60 minutes of connection time.

[0012]采用热压放电等离子烧结方法的反应时间为3〜10分钟。 [0012] The reaction time employed hot discharge plasma sintering method is 3~10 minutes.

[0013]该工艺还可以用于CC复合材料之间的连接。 [0013] The process may also be used for the connection between the CC composite.

[0014]本发明可以为SiC陶瓷基复合材料提供质量稳定的耐高温材料连接的工艺方法。 [0014] The present invention can provide a process for stable quality SiC refractory material is connected to ceramic matrix composites. 相对于其他连接方法,本发明具有如下优点: With respect to the other connection methods, the present invention has the following advantages:

[0015] 1.使用的焊料由纳米级厚度的Ti/Al双金属层交替变化的箔带组成,它具有极高的活性,比如在室温下点燃总厚度30μπι〜ΙΟΟμπι的Ti/Al纳米箔带,它在大气条件下的燃烧速度达到lOm/s,因此高活性导致可以比常规连接方法低150°C〜300°C的温度下实现SiC陶瓷,或者SiC陶瓷基复合材料的连接,因此焊接工艺大幅度节约能源; [0015] 1. Use of a solder nanoscale thickness of the Ti / Al double-layer metal foil alternating with a composition which has extremely high activity, such as the total thickness of the ignited 30μπι~ΙΟΟμπι of Ti / Al foil tape at room temperature nano it burning velocity under atmospheric conditions to achieve lOm / s, and therefore can result in high activity at a temperature of 150 ° C~300 ° C lower than the conventional connection-implemented method of SiC or SiC ceramic matrix composite material connection, the welding process substantial energy savings;

[0016] 2.由于纳米级厚度Ti/Al双金属层交替变化的箔带的极高活性,因此通过加热条件下的活化扩散反应,在与SiC陶瓷的连接界面能够生成TiC ,T1-S1-C ,T1-Al-C等高熔点化合物相或陶瓷相,获得的SiC陶瓷接头,或者SiC陶瓷基复合材料连接接头不仅室温强度高,即室温弯曲强度达到220MPa〜350MPa,而且室温接头强度的75 %以上可以稳定至1100 °C的尚温; [0016] 2. Due to the high activity of the foil nanoscale thickness Ti / Al bimetallic layer alternating, thus activated by the diffusion reaction in the heating conditions, the connecting interface of the SiC ceramics capable of producing TiC, T1-S1- C, T1-Al-C compound phase or the high-melting ceramic phases, the obtained SiC ceramic joint, or only the high temperature composites connection joint strength SiC ceramic matrix, i.e., room temperature flexural strength of 220MPa~350MPa, joint strength at room temperature and 75 % or more can be stably to 1100 ° C is still warm;

[0017] 3.本发明中的技术方案,不仅适合上述4类SiC陶瓷基复合材料,加上C/C复合材料共5类复合材料它们自身的连接,还可以用于这5类复合材料之间的两两互焊。 [0017] 3. The present invention, in the aspect, not only for the above-described four types of SiC ceramic matrix composite material, with a total of 5 based composite material C / C composite their own connection, it can also be used in composite materials 5 between any two mutually welded.

具体实施方式 Detailed ways

[0018]采用电子束-物理气相沉积(EB-PVD)等方法制备纳米级厚度双金属层Ti/Al交替变化的箔带,其中单层金属的厚度控制为15nm〜lOOnm,纳米双金属箔带的总厚度控制为30μπι〜ΙΟΟμπι,并使用这种纳米箔带作为焊料,置于被焊的SiC陶瓷,或者SiC陶瓷基复合材料,或者C/C复合材料之间,或者置于上述被焊的两种材料之间,采用真空扩散焊或者真空-氩气条件下的热压烧结或者热压放电等离子烧结方法,通过100tC〜1250°C高温下纳米箔带中Ti/Al双元素之间的放热反应以及它们与被焊的SiC陶瓷,或者SiC陶瓷基复合材料之间的活化扩散反应实现连接。 [0018] The electron beam - physical vapor deposition (EB-PVD) or the like for preparing nanoscale bimetallic layer thickness of the Ti / Al alternating foil, the thickness of a single layer of metal is controlled to 15nm~lOOnm, nano-metal foil tape the total thickness is controlled to 30μπι~ΙΟΟμπι, and the use of such nano the solder foil, placed welded SiC ceramic, or SiC ceramic matrix composite material, or between the C / C composite material, or to be placed on said welding between the two materials, vacuum diffusion bonding or vacuum - hot plasma sintering method or a hot press sintering in an argon discharge conditions, by the following 100tC~1250 ° C temperature nano discharge between Ti / Al foil tape with double element activation and between them and the welding of SiC or SiC ceramic matrix composite material of the heat diffusion reaction reaction connected. 反应连接过程中施加压力1MPa〜30MPa。 The reaction pressure is applied during connection 1MPa~30MPa. 采用真空扩散焊或者真空-氩气条件下的热压烧结方法,高温反应连接时间为3〜60分钟。 Vacuum diffusion bonding or vacuum - hot press sintering in an argon gas conditions, the reaction temperature is 3~60 minutes of connection time. 若采用热压放电等离子烧结方法扩散连接,则反应时间为3〜10分钟。 When using spark plasma sintering hot press diffusion bonding method, the reaction time of 3~10 minutes.

[0019] 实施例一 [0019] Example a

[0020]选用纳米级厚度双金属层Ti/Al交替变化的箔带作为焊料,其中单层金属的厚度为15nm〜40nm,纳米双金属箔带的总厚度为30μηι〜50μηι,采用真空-氩气条件下的热压烧结方法,加热过程中的升温速度为15 °C〜20 °C /min,通过在1150 °C〜1200 V高温下的扩散反应,反应过程中施加压力1MPa〜15MPa,反应时间3〜60小时。 [0020] The selection of nanoscale thickness bimetallic layer Ti / Al foil alternating with the solder, wherein the thickness of the single layer of metal is 15nm~40nm, the total thickness of the nano-metal foil tape is 30μηι~50μηι, vacuum - argon hot press sintering method under the condition of, during the heating rate of 15 ° C~20 ° C / min, by diffusion reaction at a high temperature of 1150 ° C~1200 V, application of pressure during the reaction 1MPa~15MPa, the reaction time 3~60 hours. 连接后从高温降至室温的冷却速度为2°C〜6°C/min。 After the connection down to room temperature from the high temperature cooling rate of 2 ° C~6 ° C / min.

[0021]实施例二 [0021] Second Embodiment

[0022]选用纳米级厚度双金属层Ti/Al交替变化的箔带作为焊料,其中单层金属的厚度为30nm〜50nm,纳米双金属箔带的总厚度为40μηι〜70μηι,采用真空-氩气条件下的热压放电等离子烧结方法,加热过程中的升温速度为40 °C〜100 0C /min,通过在1100 °C〜1200 °C高温下Si和C元素原位反应,反应过程中施加压力15MPa〜30MPa,反应时间4〜8分钟。 [0022] The selection of nanoscale thickness bimetallic layer Ti / Al foil alternating with the solder, wherein the thickness of the single layer of metal is 30nm~50nm, the total thickness of the nano-metal foil tape is 40μηι~70μηι, vacuum - argon Spark plasma sintering method of hot pressing under the conditions of heating rate during is 40 ° C~100 0C / min, Si and C elements in situ by the reaction at 1100 ° C~1200 ° C temperature, pressure is applied during the reaction 15MPa~30MPa, the reaction time is 4 to 8 minutes. 连接后从高温降至室温的冷却速度为30°C〜100°C/min。 After the connection down to room temperature from the high temperature cooling rate of 30 ° C~100 ° C / min.

[0023] 实施例三 [0023] Example three

[0024]选用纳米级厚度双金属层Ti/Al交替变化的箔带作为焊料,其中单层金属的厚度为40nm〜80nm,纳米双金属箔带的总厚度为40μηι〜ΙΟΟμπι,采用真空扩散焊方法,加热过程中的升温速度为15°C〜20°C/min,通过在1150°C〜1250°C高温下的扩散反应,反应过程中施加压力15MPa〜25MPa,反应时间3〜60分钟。 [0024] The selection of nanoscale thickness bimetallic layer Ti / Al foil alternating with the solder, wherein the thickness of the single layer of metal is 40nm~80nm, the total thickness of the nano-metal foil tape is 40μηι~ΙΟΟμπι, vacuum diffusion bonding method , during the heating rate is 15 ° C~20 ° C / min, by diffusion reaction at a high temperature 1150 ° C~1250 ° C, the pressure is applied during the reaction 15MPa~25MPa, the reaction time of 3~60 minutes. 连接后从高温降至室温的冷却速度为2°C〜6°C/min ο After the connection down to room temperature from the high temperature cooling rate of 2 ° C~6 ° C / min ο

[0025] 上述三种实施例,均进行了SiC陶瓷,Cf/SiC陶瓷基复合材料,和SiCf/SiC陶瓷基复合材料,以及Si/SiC陶瓷基复合材料这四大类材料,加上C/C复合材料共5类复合材料它们自身的连接,以及这5类复合材料之间的两两互焊。 [0025] The above three embodiments, SiC ceramics were carried out, Cf / SiC ceramic matrix composites, and SiCf / SiC ceramic matrix composites, and the Si / SiC ceramic matrix composite material of these four categories, plus C / pairwise welded between 5 C composites were based composites themselves connected, and the five-based composite material.

[0026]获得的上述四类S i C陶瓷基复合材料它们自身连接接头的室温弯曲强度达到220MPa〜350MPa,而且室温接头强度的75%以上可以稳定至1100°C的高温;获得的C/C复合材料自身连接接头的室温剪切强度达到30MPa〜45MPa,而且该室温强度的75%以上可以稳定至1100°C的高温。 [0026] The four S i C to obtain a ceramic-based composite material bending strength of the joint connection reaches room temperature themselves 220MPa~350MPa, and more than 75% of the strength of the joint can be stabilized at room temperature to a high temperature of 1100 ° C; obtained C / C composite material connection itself reaches room temperature shear strength of the joint 30MPa~45MPa, and more than 75% of the strength at room temperature can be stabilized to a high temperature of 1100 ° C. 获得的异种材料连接接头的室温弯曲强度达到被焊材料自身强度的70%〜80%,而且该强度值的75%以上可以稳定至1100°C的高温。 Connecting dissimilar material obtained at room temperature flexural strength of the joint is 70% ~ 80% strength brazing material itself, but more than 75% of the intensity value can be stabilized to a high temperature of 1100 ° C.

[0027]另需说明的是,凡本发明中所描述的具体实施例,其配方、工艺所用名称等可以不同。 [0027] Another should be noted that, where the specific embodiments of the present invention in the described embodiments, the formula, the process name and the like used may be different. 凡基于本发明专利构思所述的构造、特征及原理所做的等效或简单变化,均包括于本发明的专利保护范围内。 Where a simple change based on the configuration or equivalent, features and concepts of the present invention, the principles of patent claim made, are included within the scope of protection of the present invention.

Claims (6)

1.一种纳米箔带扩散连接碳化硅陶瓷基复合材料的工艺,其特征在于,该工艺包括以下步骤:首先,制备纳米级厚度的Ti和Al金属层交替叠加的箔带;其次,以所述纳米箔带作为焊料,将其置于被焊接的SiC陶瓷基复合材料之间,采用真空扩散焊或者真空-氩气条件下的热压烧结方法,温度为1000°c〜1250°C,压力为1MPa〜30MPa,实现碳化硅陶瓷基复合材料的连接。 A diffusion bonding foil nano SiC ceramic matrix composite technology, wherein the process comprises the following steps: First, Ti preparing nanoscale thickness and a metal layer alternately laminated Al foil tape; Secondly, the nano said the solder foil, placed between the SiC ceramic matrix composite material is welded, vacuum or a vacuum diffusion bonding - hot pressing sintering under conditions of an argon gas, a temperature of 1000 ° c~1250 ° C, a pressure connection-based composite material is 1MPa~30MPa, to achieve silicon carbide ceramic.
2.根据权利要求1所述的工艺,其特征在于:所述纳米箔带中每个金属层的厚度为15nm〜100]1111,总厚度为3(^1]1〜10(^1]1。 2. The process according to claim 1, characterized in that: the nano metal foil with thickness of each layer is 15nm~100] 1111, a total thickness of 3 (^ 1] 1~10 (^ 1] 1 .
3.根据权利要求1所述的工艺,其特征在于:所述的热压烧结为热压放电等离子烧结。 3. The process according to claim 1, wherein: said hot pressing is sintered by spark plasma sintering.
4.根据权利要求1中任一项所述的工艺,其特征在于:真空扩散焊或者真空-氩气条件下的热压烧结,高温反应连接时间为3〜60分钟。 The process according to any one of claim 1, wherein: a vacuum or a vacuum diffusion bonding - hot pressing sintering under conditions of an argon gas, the reaction temperature is 3~60 minutes of connection time.
5.根据权利要求3所述的工艺,其特征在于,采用热压放电等离子烧结方法的反应时间为3〜10分钟。 5. Process according to claim 3, characterized in that, using a reaction time of pressing the discharge plasma sintering method and the like is 3~10 minutes.
6.根据权利要求1所述的工艺,其特征在于:该工艺还可以用于CC复合材料之间的连接。 6. The process according to claim 1, wherein: the process can also be used for the connection between the CC composite.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023489A1 (en) * 2000-05-02 2007-02-01 Swiston Albert J Jr Method of joining components using amorphous brazes and reactive multilayer foil
US7270885B1 (en) * 2001-11-14 2007-09-18 Marlene Rossing, legal representative Method for brazing ceramic-containing bodies, and articles made thereby
CN102814600A (en) * 2012-08-28 2012-12-12 广州有色金属研究院 Amorphous foil brazing filler metal for ceramic braze welding
CN103273155A (en) * 2013-05-10 2013-09-04 山东大学 Diffusion bonding method of silicon carbide ceramics and ferritic stainless steel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023489A1 (en) * 2000-05-02 2007-02-01 Swiston Albert J Jr Method of joining components using amorphous brazes and reactive multilayer foil
US7270885B1 (en) * 2001-11-14 2007-09-18 Marlene Rossing, legal representative Method for brazing ceramic-containing bodies, and articles made thereby
CN102814600A (en) * 2012-08-28 2012-12-12 广州有色金属研究院 Amorphous foil brazing filler metal for ceramic braze welding
CN103273155A (en) * 2013-05-10 2013-09-04 山东大学 Diffusion bonding method of silicon carbide ceramics and ferritic stainless steel

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