CN104993696B - DC/DC converts boost module - Google Patents
DC/DC converts boost module Download PDFInfo
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- CN104993696B CN104993696B CN201510026685.1A CN201510026685A CN104993696B CN 104993696 B CN104993696 B CN 104993696B CN 201510026685 A CN201510026685 A CN 201510026685A CN 104993696 B CN104993696 B CN 104993696B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Abstract
The present invention is suitable for electronic technology field; provide a kind of DC/DC conversion boost module; the module includes inductance, switching tube, diode, capacitance, protection location and short switch device; the first pole of the first pole connection output and one end of protection location of input power, one end of the other end connection capacitance of protection location are extremely connected with the first of switching tube；The second pole of other end connection output and the first pole of diode of capacitance；The second pole of one end connecting valve pipe and the second pole of diode of inductance, the second pole of the other end connection input power of inductance；The short switch device is in parallel with the capacitance.DC/DC conversion boost module provided by the invention can solve the problems, such as existing DC/DC translation circuits, and there may be arc voltage and arc energy.
Description
Technical field
The invention belongs to electronic technology field, more particularly to a kind of DC/DC conversion boost modules.
Background technology
Tap a new source of energy and regenerative resource, it has also become the common recognition of countries in the world, and also photovoltaic generation obtains in recent years
Vigorously rapidly develop.Parallel network power generation scheme mainly has two class schemes at present：
Scheme one：Centralized high-power photovoltaic synchronization, multiple PV components as a branch are sent to confluence after being connected in series
Case, header box are generally 8 tunnels, 12 roads and 16 tunnels.Many PV string formations are after multiple header boxs confluence by DC power distribution cabinet
Branch switch after be output to the direct-flow input end mouth of inverter, then carried out after inverter input direct-current killer switch
DC/AC inversion grid connections.
Scheme two：Distributed multi-stage conversion is grid-connected, and multiple PV components as a branch are sent to DC/ after being connected in series
DC converters carry out DC/AC inversion grid connections again after carrying out Boost boostings and distribution MPPT tracking.
In scheme one, its inverter is generally high-power, and inputting, there is dc circuit breaker to switch, in PV components and directly
There is no the active semiconductor switch device (IGBT or Mos pipes) easily to fail between stream killer switch, its DC/AC is required
Active semiconductor switch device all in dc circuit breaker with exchange grid-connected contactor between, once there is active semiconductor switch
After device (IGBT or Mos pipes) failure forms direct current positive and negative anodes short circuit, DC side breaker can be controlled to thread off automatically to protect
Inverter system, prevents electric arc and fire from occurring.But photovoltaic generating system is converted for the distributed multi-stage in scheme two, by
In the advantage for needing to play distributed power generation, generally only 2~6 PV connection in series-parallel are as DC/DC boosting inverter unit
Input, the power of each DC/DC boosting units is little, if the input of each DC/DC converters, which increases by one, can oneself
The dynamic breaker for threading off control can cause system cost to increase again.Therefore at present in industry using the string type inverter of this scheme
Or MPPT power optimization devices, general using conventional DC/DC translation circuits as depicted in figs. 1 and 2, it, which is inputted, only has fuse
The protection device of F1, F2 or manual composite isolating switch K1 as cut-out input energy, once half inside DC/DC converters
During conductor 1 short-circuit failure of switching element T, equivalent to the positive and negative polarities short circuit to PV components, at this time due to the limit of PV components short circuit
Stream acts on, and arc burning is easily produced near switching element T 1, or even cause fire.
In number of patent application CN201410310186.0, the conventional DC/DC translation circuits shown in Fig. 1 are changed
Into obtaining circuit shown in Fig. 3.In circuit shown in Fig. 3, the anode that outputs and inputs of DC/DC translation circuits is not connected directly, but
Bridged by an anode fuse F3, in this way, being input current and the difference of output current by the electric current of anode fuse F1.Due to
The PV short circuit current flows formed in semiconductor switch device T3 (IGBT or Mos pipes) failure are needed by anode fuse F3,
When semiconductor switch device T3 fails, if illumination is sufficiently strong at this time, PV component short circuit current flows are sufficiently large, more than anode fuse
After the rated current of F3, then anode fuse F3 is disconnected to cut off short circuit current flow, so as to play a protective role.But if semiconductor
Illumination is not strong enough when switching element T 3 fails, and the short circuit current flow of PV components is smaller, no more than fuse rated current when, then anode
Fuse F3 can not cut off short circuit current flow, even and if less PV short circuit current flows may also can be in the semiconductor switching device of failure at this time
Part T3 peripheries produce arc voltage and arc energy, cause arc burning and failure propagation.
The content of the invention
The purpose of the embodiment of the present invention is to provide a kind of DC/DC boosting inverters module, it is intended to solves existing DC/DC and becomes
Changing circuit, there may be the problem of arc voltage and arc energy.
The embodiment of the present invention is achieved in that a kind of DC/DC conversion boost module, and the module includes inductance, switch
Pipe, diode, capacitance, protection location and short switch device, the first pole of the first pole connection output of input power and protection
One end of unit, the other end of protection location are extremely connected with the first of one end of capacitance and switching tube；The other end connection of capacitance
Second pole of output and the first pole of diode；The second pole of one end connecting valve pipe and the second pole of diode of inductance, electricity
Second pole of the other end connection input power of sense；The short switch device is in parallel with the capacitance.
Further, the first order of the input power be cathode, the first pole of the first extremely cathode, switching tube of output
For cathode, the first extremely anode of diode.
Further, the first of the input power extremely anode, output the first extremely anode, switching tube the first pole
For anode, the first extremely cathode of diode.
Further, the short switch device be IGBT, Mos pipe, SCR pipes, relay or contactor, the DC/
DC conversion boost modules further include the failure of detection switch pipe and trigger the control module of short switch break-over of device.
Further, the short switch device is temperature detect switch (TDS).
Further, the switching tube is Mos pipes, the just extremely D poles of Mos pipes of the switching tube, the switching tube
Anode is the S poles of Mos pipes.
Further, the switching tube is insulated gate bipolar transistor IGBT, the just extremely C of IGBT of the switching tube
Pole, the anode of the switching tube are the E poles of IGBT.
Further, the protection location is automatic protection device or switching device.
Further, the input power is at least one set of photovoltaic module.
The embodiment of the present invention is extra to increase short switch device on the basis of number of patent application CN201410310186.0
Part, ensures no matter in the case where illumination is strong or weak, and whens semiconductor switch device T short-circuit failures can play a protective role,
Prevent the burning of electric arc and the extension of failure.
Brief description of the drawings
Fig. 1 is the circuit diagram of a DC/DC boosting inverter modules of the prior art；
Fig. 2 is the circuit diagram of another DC/DC boosting inverters module of the prior art；
Fig. 3 is the circuit diagram of the another DC/DC boosting inverters module of the prior art；
Fig. 4 is the circuit diagram of the DC/DC boosting inverter modules of the embodiment of the present invention one；
Fig. 5 is a circuit connection diagram of the DC/DC boosting inverter modules of the embodiment of the present invention one；
Fig. 6 is another circuit connection diagram of the DC/DC boosting inverter modules of the embodiment of the present invention one.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Embodiment one
The embodiment of the present invention one proposes a kind of DC/DC boosting inverters module.As shown in figure 4, the DC/ of the embodiment of the present invention one
DC boosting inverters module include inductance L4, switching tube 10, diode 20, capacitance C4, protection location F4 (embodiment of the present invention one with
Illustrated exemplified by automatic protection device fuse, can also be fuse) and a short switch device 30.Wherein, input
The first pole of the first pole connection output and one end of protection location F4 of power supply, the other end connection capacitance C4's of protection location F4
One end is extremely connected with the first of switching tube 10；The second pole of other end connection output and the first pole of diode 20 of capacitance C4；
The second pole of one end connecting valve pipe 10 and the second pole of diode 20 of inductance L4, the other end connection input power of inductance L4
The second pole；Short switch device 30 is in parallel with capacitance C4.
Fig. 5 show a kind of connection mode of the embodiment of the present invention one, wherein, the first extremely anode, of input power
Two extremely cathodes；The extremely extremely cathode of anode, second of the first of output；The first of switching tube 10 extremely anode, second are extremely just
Pole；The extremely extremely cathode of cathode, second of the first of diode 20.
Fig. 6 show another connection mode of the embodiment of the present invention one, and the first order of input power is cathode, second extremely
Anode；The extremely extremely anode of cathode, second of the first of output；The extremely extremely anode of cathode, second of the first of switching tube 10；Two poles
The extremely anode of the first of pipe 20, the second extremely anode of diode 20.
Switching tube 10 can be that Mos is managed, then the just extremely D poles of Mos pipes of switching tube, the anode of switching tube are the S of Mos pipes
Pole.Switching tube can also be the just C poles of extremely IGBT of insulated gate bipolar transistor IGBT, then switching tube, the anode of switching tube
For the E poles of IGBT.
IGBT, Mos pipe, SCR pipes, relay or contactor may be selected in short switch device 30.When short switch device
30 be IGBT, Mos pipe, SCR pipes, relay or during contactor, and DC/DC conversion boost modules further include a control module, use
Judged according to the input voltage vin and the abnormal conditions of the electric current i of inductance L4 that detect, confirm that switching tube 10 is in short
Short switch device 30 is triggered when road failure or starting the arc state to turn on, and is formed back by short switch device 30 and fuse F4
Road, blows fuse F4.
When temperature detect switch (TDS) also may be selected in short switch device 30, when short switch device 30 is temperature detect switch (TDS), then opening
After pass 10 short-circuit failure of pipe causes arc burning to accumulate certain thermal energy, high temperature is formed around short switch device 30,
Triggering short switch device 30 turns on, and also passes through short switch device 30K and fuse F4 forming circuits, fuse F4 is burnt
It is disconnected.
The work of the DC/DC boosting inverter modules of the embodiment of the present invention one is further described by taking Fig. 5, Fig. 6 as an example below
Make principle.The output after PV components confluence is lied prostrate as shown in figure 5, input power Vin is two optical crosstalks, its cathode (connection PV positive voltages)
It is connected with one end of inductance L5, the anode of the other end connection diode D5 of inductance L5 and cathode (such as Mos pipes with switch transistor T 5
D poles) be connected, the cathode of the cathode of diode D5 and the cathode of capacitance C5 and output Vdc are connected, and the anode of switch transistor T 5 is (i.e.
The S poles of Mos pipes) anode of connection capacitance C5 is connected with one end of fuse F5, the other end connection input Vin's of fuse F5
Anode is connected with the anode of output Vdc.Short switch device K5 is 120 degree of normally opened temperature detect switch (TDS), is connected in parallel in capacitance C5
Both ends, open a way do not work under normal circumstances.
Per optical crosstalk, the rated current of volt PV inputs is 9A, short circuit current flow 10A or so, and the often maximum open circuit voltage of string component
Less than 1000V, MPPT voltage ranges are 400~800V.The present embodiment one is two PV inputs in parallel, during specified input current 18A
Corresponding Vin voltages are 500~750V, short-circuit output current 20A or so, while the output Vdc designs in the present embodiment one
For 820Vdc, corresponding output current is 11A~16.5A.Can calculate accordingly, by fuse F5 running currents for 7~
1.5A, thus selection rated current be 10A fuse as protection location.
After 5 short-circuit failure of switch transistor T, if illumination is sufficiently strong, the short circuit current flow of PV input powers can be more than 10A,
Fuse F5 is caused to blow automatically.If illumination is not strong enough, after 5 short-circuit failure of switch transistor T, short circuit current flow is not enough to allow protection
Fuse 5F is blown, and short circuit current flow can slowly gather heat around switch transistor T 5 at this time, or even electric arc and burning occurred.
When short circuit current flow causes electric arc or burning capacity, and after causing the environment temperature of short switch device K5 more than 120 DEG C, short circuit
Switching device K5 closure conductings form short circuit.
Closed at short switch device K5 both ends after forming short circuit, the output voltage Vdc of 820V is short-circuited at this time, DC/AC
The bus capacitor energy of inverter end is formed into a loop by temp.-controlled short circuit switching device K5 and fuse F5, and fuse F5 is burnt
It is disconnected.After fuse 5F is blown, the switch transistor T 5 equivalent to failure is cut off current loop, and system is protected.
The output after PV components confluence, its anode and the one of inductance L6 are lied prostrate as shown in fig. 6, input power Vin is two optical crosstalks
End is connected, the cathode of the other end connection diode D6 of inductance L6 and the anode (the E poles of such as IGBT) with switch transistor T 6, diode
The anode of the anode connection capacitance C6 of D6 is connected with the anode of output Vdc, cathode (the C poles of such as IGBT) the connection electricity of switch transistor T 6
Hold the cathode of C6 and one end of fuse F6, the cathode of other end connection input Vin and the cathode of output Vdc of fuse F6.
Short switch device K6 is SCR thyristors, is connected in parallel in the both ends of capacitance C6, and SCR thyristors K is off under normal circumstances
State, the failure of 40 detection switch pipe T6 of control module simultaneously send trigger signal to short switch device K6, trigger short switch
The conducting short circuit of device K6, is only a wherein connection relation shown in Fig. 6, and control module 40 connects the cathode and anode of input power
The sampling of voltage is carried out, while the output for connecting Hall element carries out the sampling of input inductive current.
In Fig. 6, per optical crosstalk, the rated current of volt PV inputs is 9A, short circuit current flow 10A or so, and output Vdc is designed as
820Vdc, corresponding output current is 11A~16.5A, and the running current by fuse F6 is 7~1.5A, is selected specified
Electric current is the fuse of 10A as protection location.
When 6 short-circuit failure of switch transistor T, if illumination is sufficiently strong, the short circuit current flow of PV input powers can be more than 10A,
Cause to protect fuse F6 to blow automatically.If illumination is not strong enough, short circuit current flow is less than 10A, and fuse F6 will not be acted, dimension
Hold conducting.Take electricity to come from output voltage due to control module, be not short-circuited, so system still has accessory power supply
's.Control module 40 can monitor that input voltage vin is very low at this time, such as less than 100V, while the electric current i of inductance L6 is not equal to
The abnormal conditions of 0 (such as larger than 1A), it is to be in short-circuit failure state to judge switch transistor T 6.Meanwhile control module 40 drive it is short
Way switch device K6 is turned on, and output voltage Vdc is short-circuited by short switch device K6 and fuse F6, DC/AC inverter ends
Energy be formed into a loop by short switch device K6 and fuse F6, fuse F6 is blown.After fuse F6 is blown,
Switch transistor T 6 equivalent to failure is cut off current loop, and system is protected.
When the DC/DC boosting inverters module of the embodiment of the present invention one can be to reliably applied in photovoltaic products, avoid working as
After switching tube short-circuit failure, the short circuit current flow of photovoltaic module is superimposed upon power cell for a long time, causes failure propagation, even causes fire
Calamity equivalent risk.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of DC/DC converts boost module, it is characterised in that the module includes inductance, switching tube, diode, capacitance, guarantor
Protect unit and short switch device, the first pole of the first pole connection output and one end of protection location of input power, protection list
The other end of member is extremely connected with one end of capacitance and the first of switching tube；The second pole and two poles of the other end connection output of capacitance
First pole of pipe；The second pole of one end connecting valve pipe and the second pole of diode of inductance, the other end connection input of inductance
Second pole of power supply；The short switch device is in parallel with the capacitance, and the short switch device is temperature detect switch (TDS).
2. DC/DC as claimed in claim 1 converts boost module, it is characterised in that the first order of the input power is just
Pole, output first extremely cathode, switching tube the first extremely cathode, diode the first extremely anode.
3. DC/DC as claimed in claim 1 converts boost module, it is characterised in that the first of the input power is extremely negative
Pole, output first extremely anode, switching tube the first extremely anode, diode the first extremely cathode.
4. such as claims 1 to 3 any one of them DC/DC conversion boost modules, it is characterised in that the switching tube is Mos
Pipe, the just extremely D poles of Mos pipes of the switching tube, the anode of the switching tube are the S poles of Mos pipes.
5. such as claims 1 to 3 any one of them DC/DC conversion boost modules, it is characterised in that the switching tube is insulation
Grid bipolar transistor IGBT, the just C poles of extremely IGBT of the switching tube, the anode of the switching tube are the E poles of IGBT.
6. such as claims 1 to 3 any one of them DC/DC conversion boost modules, it is characterised in that the protection location is certainly
Dynamic protection device or switching device.
7. such as claims 1 to 3 any one of them DC/DC conversion boost modules, it is characterised in that the input power is extremely
Few one group of photovoltaic module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510026685.1A CN104993696B (en) | 2015-01-20 | 2015-01-20 | DC/DC converts boost module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510026685.1A CN104993696B (en) | 2015-01-20 | 2015-01-20 | DC/DC converts boost module |
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| Publication Number | Publication Date |
|---|---|
| CN104993696A CN104993696A (en) | 2015-10-21 |
| CN104993696B true CN104993696B (en) | 2018-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510026685.1A Active CN104993696B (en) | 2015-01-20 | 2015-01-20 | DC/DC converts boost module |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106671794B (en) * | 2015-11-11 | 2019-06-21 | 中车大连电力牵引研发中心有限公司 | DCDC main circuit and electric car power supply circuit |
| CN105929299B (en) * | 2016-06-08 | 2019-04-30 | 北京联合大学 | A kind of electric car DC/DC low-voltage power supply and test circuit, equipment, system and test method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909319A (en) * | 2005-06-27 | 2007-02-07 | 国际整流器公司 | Efficient in-rush current limiting circuit with dual gated bidirectional hemts |
| CN101427467A (en) * | 2006-04-21 | 2009-05-06 | 空中客车法国公司 | Safety device for a semiconductor switch |
| CN102013802A (en) * | 2010-12-17 | 2011-04-13 | 上海小糸车灯有限公司 | BOOST circuit with short circuit protection function |
| CN104092373A (en) * | 2014-07-01 | 2014-10-08 | 深圳市长昊机电有限公司 | DC/DC boost conversion module and circuit |
-
2015
- 2015-01-20 CN CN201510026685.1A patent/CN104993696B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909319A (en) * | 2005-06-27 | 2007-02-07 | 国际整流器公司 | Efficient in-rush current limiting circuit with dual gated bidirectional hemts |
| CN101427467A (en) * | 2006-04-21 | 2009-05-06 | 空中客车法国公司 | Safety device for a semiconductor switch |
| CN102013802A (en) * | 2010-12-17 | 2011-04-13 | 上海小糸车灯有限公司 | BOOST circuit with short circuit protection function |
| CN104092373A (en) * | 2014-07-01 | 2014-10-08 | 深圳市长昊机电有限公司 | DC/DC boost conversion module and circuit |
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| CN104993696A (en) | 2015-10-21 |
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Effective date of registration: 20200910 Address after: Room 609, west block, 6 / F, Tian'an Innovation Technology Plaza (phase II), intersection of Binhe Road and Xiangmihu Road, Tian'an community, Shatou street, Futian District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN HOPEWIND ELECTRIC Co.,Ltd. Address before: 6 A2 District, 1 Yanshan Avenue, Yan Chuan community, Songgang street, Baoan District, Shenzhen, Guangdong 518000, China Patentee before: SHENZHEN CHANGHAO MECHANICAL AND ELECTRICAL Co.,Ltd. |