CN104993017A - Transfer preparation method of crystal silicon thin film - Google Patents
Transfer preparation method of crystal silicon thin film Download PDFInfo
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- CN104993017A CN104993017A CN201510356818.1A CN201510356818A CN104993017A CN 104993017 A CN104993017 A CN 104993017A CN 201510356818 A CN201510356818 A CN 201510356818A CN 104993017 A CN104993017 A CN 104993017A
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- silicon film
- polycrystal silicon
- transfer preparation
- preparation
- brittle layer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title abstract description 13
- 239000013078 crystal Substances 0.000 title abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229920006254 polymer film Polymers 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000407 epitaxy Methods 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010408 film Substances 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000007774 longterm Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 229940090044 injection Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a transfer preparation method of a crystal silicon thin film. The method includes a crystal silicon substrate required by epitaxy, an embrittlement layer formed on a substrate surface through treatment, a crystal silicon thin film further formed on the embrittlement layer and having the same crystal orientation, and a polymer film with high adhesivity that is prepared on the crystal silicon thin film after the embrittlement layer is fractured through annealing treatment, and the crystal silicon thin film is transferred from the substrate by utilization of high adhesivity of the polymer film and weak connectivity of the embrittlement layer after annealing, thereby enabling the original substrate to be reused. Through the method, a high-quality single-crystal or polycrystalline thin film can be obtained easily and conveniently, and loss generated by the substrate material is close to zero.
Description
Technical field
The invention belongs to polycrystal silicon film preparation field, relate to a kind of transfer preparation method of polycrystal silicon film.
Background technology
Compared to traditional body material crystal silicon battery, battery thin membranization can be reduced materials cost to a great extent, thus reduce the cost of photovoltaic cell and assembly.On the other hand, all right expanded application field of solar cell of filming, realizes diversified application, thus makes the application of solar cell more convenient.For this reason, thin film silicon solar cell is one of important directions of silica-based solar cell research and development for a long time.At present, silica-based thin-film solar cells mainly contains two classes, and a class is adopt the pecvd process non-crystal silicon solar cell prepared of Direct precipitation on a glass substrate, and another kind of is polycrystal silicon film solar cell.Amorphous silicon thin-film solar cell is limited to the defect-Staebler-Wronski effect of amorphous silicon material self, is difficult to obtain higher, steady in a long-term conversion efficiency.In long-term R & D process, researcher invests sight in polycrystal silicon film solar cell technology of preparing gradually.The preparation of high-quality polycrystal silicon film is key and the difficult point place of this type of photovoltaic cell.The amorphous silicon membrane of CVD or PVD deposition preparation is made Crystallizing treatment by preparation technology's many employings annealing technology of early stage polycrystal silicon film, thus realizes polycrystal silicon film.This technology is complex process on the one hand, and annealing temperature is higher on the other hand also easily causes secondary damage.Development along with CVD technology makes Direct precipitation high-quality polycrystal silicon film become possibility.But be directly prepared in substrate by film prepared by CVD technology, the preparations and applicatio of device is also many to be used together with substrate, causes semiconductor device and is difficult to cost degradation.Not only be conducive to realizing reusing of high cost base material by the mode of film transfer, also help in realizing the thin-film device in various types of substrates, thus significantly can reduce device cost.
Existing Patents proposes different solutions for the stripping of silicon thin film at present.Patent CN103098196 proposes to inject ion to crystalline silicon substrate, and annealed process forms brittle layer.This mode also at consumption backing material, is therefore difficult to obtain optimized cost to a certain extent.Patent CN201310142834 proposes the solution with above-mentioned document similarity, but its application process exists more substantial backing material consumption.Patent CN201310167373 proposes the technology path different from technique scheme, have employed etching mode in crystalline silicon substrate, prepares silicon rod array, in this, as the articulamentum of fragility, thus finally realizes the object of stripping in technique.This scheme can bring the effect of substrate loss equally.
Summary of the invention
Invention proposes a kind of transfer preparation method of polycrystal silicon film for the technical problem existed in prior art, concrete scheme is as follows:
A transfer preparation method for polycrystal silicon film, it is characterized in that, concrete steps are as follows:
Step one: the brittle layer being prepared high impurity concentration on a monocrystaline silicon substrate by CVD epitaxy technique and doping process;
Step 2: the polycrystal silicon film by the preparation of Low Temperature Thermal wire chemical gas-phase deposition on brittle layer with perfect lattice structure;
Step 3: by making brittle fault rupture to the annealing in process of brittle layer, realize the Weak link between polycrystal silicon film and substrate;
Step 4: there is adhering thin polymer film in the preparation of polycrystal silicon film surface;
Step 5: the attachment force based on the adhesiveness of thin polymer film and the brittle layer after annealing in process weakens, and polycrystal silicon film is transferred to thin polymer film from monocrystalline substrate.
In such scheme, first doping process is utilized to prepare brittle layer on monocrystalline substrate surface, and polycrystal silicon film is prepared on brittle layer, annealed process subsequently makes brittle fault rupture and the attachment force of brittle layer is weakened, the last thin polymer film preparing high-adhesiveness on polycrystal silicon film, and utilize the high-adhesiveness of thin polymer film and polycrystal silicon film shifts from monocrystalline substrate by the reduction of brittle layer attachment force after annealing.
As preferably, in step one, be greater than 60% at the crystallization rate of brittle layer.The crystallization rate of brittle layer controls can ensure that the follow-up polycrystal silicon film prepared has higher crystallization rate 60%.
As preferably, utilize doping process impurity ion in step one in brittle layer preparation process, the dosage of foreign ion doping is not less than 10E15cm-3.
As preferably, described foreign ion is hydrogen, boron, nitrogen, oxygen, phosphorus, aluminium, sulphur, carbon, any one of magnesium.
As preferably, the brittle layer in step one is single or multiple lift.The brittle layer of multilayer can not only obtain stable brittle peeling effect, can also obtain the monocrystalline silicon thin film that repeatability is good.
As preferably, in step 2, polycrystal silicon film increases doping process.
As preferably, in step 2, polycrystal silicon film is the complex function polycrystal silicon film structure that forms of multilayer material or device architecture.
As preferably, the annealing temperature in step 3 is higher than 100 DEG C.
As preferably, in step 4 thin polymer film be polyimides, PMMA, polystyrene, poly-third ethene any one.
As preferably, the thin polymer film in step 4 is the composite polymer films that multiple material is formed.The composite polymer films that multiple material is formed can realize the transfer of polycrystal silicon film to various substrates.
Compared with prior art, tool of the present invention has the following advantages: the transfer preparation method of a kind of polycrystal silicon film of the present invention, by preparing brittle layer and the thin polymer film with high-adhesiveness, achieve the transfer of polycrystal silicon film, polycrystal silicon film transfer is not only conducive to realizing reusing of high cost base material, also help in realizing the thin-film device in various types of substrates, thus significantly can reduce device cost.
Accompanying drawing explanation
Fig. 1 is the operational flowchart of the transfer preparation method of a kind of polycrystal silicon film of the embodiment of the present invention.
The polycrystal silicon film that the transfer preparation method of a kind of polycrystal silicon film that Fig. 2 is the embodiment of the present invention adopts prepares structure chart.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Fig. 1 is the operational flowchart of the transfer preparation method of a kind of polycrystal silicon film of the embodiment of the present invention;
The polycrystal silicon film that the transfer preparation method of a kind of polycrystal silicon film that Fig. 2 is the embodiment of the present invention adopts prepares structure chart.
A transfer preparation method for polycrystal silicon film, specifically comprises following steps:
Step one: the brittle layer of individual layer being prepared high impurity concentration on a monocrystaline silicon substrate by CVD epitaxy technique and doping process, wherein, impurity is hydrogen ion, and the hydrionic dopant dose of impurity is 10E15cm
-3; The crystallization rate of the brittle layer of the individual layer prepared is 95%.
Step 2: the individual layer polycrystal silicon film by chemical vapor deposition method preparation on brittle layer with perfect lattice structure;
Step 3: by making brittle fault rupture to the annealing in process of brittle layer, realize the Weak link between polycrystal silicon film and substrate, wherein annealing temperature is 150 DEG C;
Step 4: the polyimide polymer film preparing high-adhesiveness on polycrystal silicon film surface;
Step 5: the attachment force based on the high-adhesiveness of thin polymer film and the brittle layer after annealing in process weakens, and polycrystal silicon film is transferred to thin polymer film from monocrystalline substrate.Wherein, the thin polymer film of high-adhesiveness is polyimide material.
The transfer preparation method of a kind of polycrystal silicon film of the embodiment of the present invention, comprise the crystalline silicon substrate needed for extension, at the brittle layer that substrate surface is formed by process, and the polycrystal silicon film with identical crystal orientation further formed on brittle layer, on polycrystal silicon film, the thin polymer film of high-adhesiveness is prepared again after making brittle fault rupture by annealing in process, and after utilizing the high-adhesiveness of thin polymer film and annealing, polycrystal silicon film shifts from substrate by the Weak link of brittle layer, makes former substrate to reuse simultaneously.By this method can be easy the high-quality monocrystalline of acquisition or polycrystal film, and for backing material produce loss close to zero.
Above-described embodiment has been described in detail technical scheme of the present invention and beneficial effect; be understood that and the foregoing is only most preferred embodiment of the present invention; be not limited to the present invention; all make in spirit of the present invention any amendment, supplement and equivalent to replace, all should be included within protection scope of the present invention.
Claims (10)
1. a transfer preparation method for polycrystal silicon film, it is characterized in that, concrete steps are as follows:
Step one: the brittle layer being prepared high impurity concentration on a monocrystaline silicon substrate by CVD epitaxy technique and doping process;
Step 2: the polycrystal silicon film by the preparation of Low Temperature Thermal wire chemical gas-phase deposition on brittle layer with perfect lattice structure;
Step 3: by making brittle fault rupture to the annealing in process of brittle layer, realize the Weak link between polycrystal silicon film and substrate;
Step 4: there is adhering thin polymer film in the preparation of polycrystal silicon film surface;
Step 5: the attachment force based on the adhesiveness of thin polymer film and the brittle layer after annealing in process weakens, and polycrystal silicon film is transferred to thin polymer film from monocrystalline substrate.
2. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, is greater than 60% in step one at the crystallization rate of brittle layer.
3. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, utilizes doping process impurity ion in step one in brittle layer preparation process, and the dosage of foreign ion doping is not less than 10E15cm
-3.
4. the transfer preparation method of a kind of polycrystal silicon film according to claim 3, is characterized in that, described foreign ion be hydrogen, boron, nitrogen, oxygen, phosphorus, aluminium, sulphur, carbon, magnesium any one.
5. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, the brittle layer in step one is single or multiple lift.
6. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, in step 2, polycrystal silicon film increases doping process.
7. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, in step 2, polycrystal silicon film is complex function polycrystal silicon film structure or the device architecture of multilayer material formation.
8. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, the annealing temperature in step 3 is higher than 100 DEG C.
9. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, in step 4 thin polymer film be polyimides, PMMA, polystyrene, poly-third ethene any one.
10. the transfer preparation method of a kind of polycrystal silicon film according to claim 1, is characterized in that, the thin polymer film in step 4 is the composite polymer films that multiple material is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510356818.1A CN104993017A (en) | 2015-07-23 | 2015-07-23 | Transfer preparation method of crystal silicon thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510356818.1A CN104993017A (en) | 2015-07-23 | 2015-07-23 | Transfer preparation method of crystal silicon thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104993017A true CN104993017A (en) | 2015-10-21 |
Family
ID=54304801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510356818.1A Pending CN104993017A (en) | 2015-07-23 | 2015-07-23 | Transfer preparation method of crystal silicon thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104993017A (en) |
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2015
- 2015-07-23 CN CN201510356818.1A patent/CN104993017A/en active Pending
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Application publication date: 20151021 |
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