CN104993000B - A kind of cell piece for solar opto-electronic board - Google Patents
A kind of cell piece for solar opto-electronic board Download PDFInfo
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- CN104993000B CN104993000B CN201510305036.5A CN201510305036A CN104993000B CN 104993000 B CN104993000 B CN 104993000B CN 201510305036 A CN201510305036 A CN 201510305036A CN 104993000 B CN104993000 B CN 104993000B
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- cell piece
- layer
- electronic board
- solar opto
- polysilicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
This case discloses a kind of cell piece for solar opto-electronic board, including：Polysilicon chips and be arranged on the encapsulated layer on described polysilicon chips plane of illumination；Wherein, described encapsulated layer includes transmission layer and reflecting layer, and described reflecting layer is located at the top of described polysilicon chips plane of illumination, and described transmission layer is located above described reflecting layer；Described transmission layer transmission sunlight, reflects infrared ray；The sunlight that part is reflected by the plane of illumination of described polysilicon chips is reflected back the plane of illumination of described polysilicon chips by described reflecting layer again.The cell piece for solar opto-electronic board that this case refers to passes through setting reflecting layer and transmission layer on existing polysilicon chips, both reduced the interference effect to polysilicon for the infrared ray, further through reflection by more photons " keeping here " being reflected back by polysilicon chips, and continue to participate in the opto-electronic conversion of polysilicon, thus effectively increasing the photoelectric transformation efficiency of polysilicon.
Description
Technical field
The present invention relates to a kind of cell piece, particularly to a kind of cell piece for solar opto-electronic board.
Background technology
Solaode is a kind of device that solar energy is changed into electric energy.The material that photovoltaic effect can be produced is a lot：As
Monocrystal silicon, polysilicon, non-crystalline silicon, GaAs etc..The electricity generating principle of crystalline silicon is：P-type crystal silicon can get N-type through overdoping phosphorus
Silicon, forms P-N junction, when light is irradiated to the surface of silicon crystal, a part of photon is absorbed by silicon materials, the energy transmission of photon
To silicon atom, make electronics that transition to occur, become free electron, assemble in P-N junction both sides, produce potential difference.Connect electricity when outside
Lu Shi, in the presence of this voltage, produces certain output by there being electric current to flow through external circuit.
In the prior art, the photoelectric transformation efficiency of crystalline silicon is usually no more than 18%, and theCourse of PV Industry is for many years, mesh
Front encountered technical bottleneck, the photoelectric transformation efficiency of crystalline silicon also cannot be largely increased.When light is irradiated to silicon crystal
Surface when, only some photon is absorbed by silicon materials, and other most of photons are reflected or reflect away, therefore, such as
What becomes, with the conversion efficiency improving crystalline silicon, the focus instantly studied by technological means Lai " keeping here " photon.
Content of the invention
For the shortcomings of the prior art, it is an object of the invention to provide a kind of be used for solar opto-electronic board
Cell piece, it passes through in common polysilicon chips surface setting reflecting layer and transmission layer, and part reflected light is received
Collection is returned, and continues on for opto-electronic conversion, such that it is able to improve the electricity conversion of crystalline silicon.
The technical solution used in the present invention is as follows：
A kind of cell piece for solar opto-electronic board, including：
Polysilicon chips；And
It is arranged on the encapsulated layer on described polysilicon chips plane of illumination；
Wherein, described encapsulated layer includes transmission layer and reflecting layer, and it is illuminated that described reflecting layer is located at described polysilicon chips
The top in face, described transmission layer is located above described reflecting layer；Described transmission layer transmission sunlight, reflects infrared ray；Described reflection
The sunlight that part is reflected by layer by the plane of illumination of described polysilicon chips is reflected back the quilt of described polysilicon chips again
Shadow surface.
Preferably, the described cell piece for solar opto-electronic board, wherein, described transmission layer includes following weight portion
Material：
Preferably, the described cell piece for solar opto-electronic board, wherein, described reflecting layer is by multiple in equilateral three
Angular hyalomitome glass blocks are sequentially arranged composition.
Preferably, the described cell piece for solar opto-electronic board, wherein, described hyalomitome glass blocks include following
The material of weight portion：
Preferably, the described cell piece for solar opto-electronic board, wherein, described SB
In, cinnamic content is 37～38wt%.
Preferably, the described cell piece for solar opto-electronic board, wherein, described SB
Number-average molecular weight be 2300～2400g/mol.
Preferably, the described cell piece for solar opto-electronic board, wherein, described polyethylene terephthalate
Number-average molecular weight be 5500～5600g/mol.
Preferably, the described cell piece for solar opto-electronic board, wherein, described transmission layer also includes 0.3～0.4
The lithium bromide of weight portion.
Preferably, the described cell piece for solar opto-electronic board, wherein, the thickness of described transmission layer is 20～30
μm, the thickness in described reflecting layer is 0.5～0.7mm.
The invention has the beneficial effects as follows：The cell piece for solar opto-electronic board that this case refers to passes through in existing polycrystalline
On silicon, setting reflecting layer and transmission layer, had both reduced the interference effect to polysilicon for the infrared ray, will be more further through reflection
The photon " keeping here " being reflected back by polysilicon chips, and continue to participate in the opto-electronic conversion of polysilicon, thus effectively increasing many
The photoelectric transformation efficiency of crystal silicon.
Brief description
Fig. 1 is the structural representation of the cell piece for solar opto-electronic board.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings, to make those skilled in the art with reference to description literary composition
Word can be implemented according to this.
This case proposes the cell piece for solar opto-electronic board of an embodiment, including：
Polysilicon chips；And
It is arranged on the encapsulated layer on polysilicon chips plane of illumination；
Wherein, this encapsulated layer not in prior art for protecting crystalline silicon from the protective layer of corrosion, but a kind of use
In the structure improving polycrystalline silicium photovoltaic conversion efficiency, encapsulated layer includes transmission layer and reflecting layer, and reflecting layer is located at polysilicon chips
The top of plane of illumination, transmission layer is located above reflecting layer；Transmission layer has transmission sunlight, reflects ultrared ability, that is, thoroughly
Penetrate the visible ray of 320～1100nm, reflect infrared-ray；When radiation of visible light is in polysilicon surface, has partly light and occur
Reflection or refraction, only sub-fraction light participate in opto-electronic conversion, and reflecting layer can be illuminated by polysilicon chips by part
The sunlight that face reflects is reflected back the plane of illumination of polysilicon chips again, to proceed opto-electronic conversion.
As another embodiment of this case, wherein, transmission layer includes the material of following weight portion：
The coating process of transmission layer is：Above-mentioned each material is added in ethyl acetate, mixes well, subsequently adopt spreader to apply
It is distributed in reflection layer surface, dry 15min at 120 DEG C, you can obtain transmission layer.
SB can improve the absorbance of visible ray, and meanwhile, it also has excellent resistance to ultra-vioket radiation
Ability, its weatherability is outstanding；After polyethylene terephthalate is combined with SB, can improve synergistic
The absorbance of visible ray；The addition of argentum powder, can improve transmission layer to ultrared reflectance；And amazing be the discovery that,
When a small amount of bronze is after argentum powder is combined, synergism can be produced hence it is evident that lifting transmission layer is to infrared reflectance.And other
Metal dust such as aluminium powder, titanium valve, zirconium powder etc. all can not reach argentum powder and bronze with reference to rear reached effect.
As the another embodiment of this case, wherein, reflecting layer is sequentially arranged by multiple hyalomitome glass blocks in equilateral triangle
Row composition.It is further preferred that triangle is in inverted triangle arranging.This structure can make light after multiple total reflection, returns polycrystalline
Silicon face participates in photoelectric conversion process.From hyalomitome glass blocks in order to not affect the transmission effects of visible ray.But, hyalomitome
Glass blocks also can affect be totally reflected effect, accordingly, it would be desirable to be further qualified to the material of glass blocks.
As the another embodiment of this case, wherein, hyalomitome glass blocks include the material of following weight portion：
The preparation method of hyalomitome glass blocks be the powder body of above-mentioned material is mixed in proportion after, add water and mix well, subsequently exist
Under inert gas shielding, 1000 DEG C of calcinations 3 hours, 300 DEG C are incubated 0.5 hour, and vitreous body is obtained after cooling.Subsequently at high temperature
Melting, melt is added in the mould being sequentially arranged containing multiple trianglees preparing, obtains containing multiple after natural cooling
The reflection layer structure of the triangle-shaped transparent matter glass blocks being arranged in order.
Research finds, the combination of silver oxide, nickel oxide and cerium oxide three, the efficient transmission of glass blocks can be made to be derived from outer
The visible ray in portion, again can total reflection part is reflected by polysilicon chips surface effectively visible ray.And common glass
Then almost cannot be totally reflected the visible ray being reflected by polysilicon chips surface, and silver oxide, nickel oxide and cerium oxide three
Combination and proportioning should be limited, the combination of other metal-oxides does not find to produce this effect.
As the another embodiment of this case, wherein, in SB, cinnamic content be 37～
38wt%.Research finds, after cinnamic content is limited further in SB, can obtain
Higher absorbance and more excellent infrared external reflection ability, thus the conversion efficiency of polysilicon chips can be improved.
As the another embodiment of this case, wherein, the number-average molecular weight of SB is 2300～2400g/
mol.The number-average molecular weight of SB also should be defined, and experiment finds, works as SB
Number-average molecular weight deviate optimized scope when, the photoelectric transformation efficiency of polysilicon chips will decline.
As the another embodiment of this case, wherein, the number-average molecular weight of polyethylene terephthalate be 5500～
5600g/mol.The number-average molecular weight of polyethylene terephthalate also should be defined, and experiment finds, works as poly terephthalic acid
When the number-average molecular weight of glycol ester deviates optimized scope, the photoelectric transformation efficiency of polysilicon chips will decline.
As the another embodiment of this case, wherein, transmission layer also includes the lithium bromide of 0.3～0.4 weight portion.Research finds,
After lithium bromide is combined with argentum powder, bronze, can further improve the absorbance of transmission layer and to infrared reflecting effect, thus can have
Effect reduces the interference effect to opto-electronic conversion for the infrared ray, improves the photoelectric conversion rate of polysilicon chips.And with lithium bromide performance phase
Near sodium bromide, potassium bromide, lithium chloride, sodium chloride, potassium chloride, lithium fluoride etc. are not then found to have this function, therefore
Lithium bromide and its addition should be restricted.
As the another embodiment of this case, wherein, the thickness of transmission layer is 20～30 μm, the thickness in reflecting layer is 0.5～
0.7mm.The selection of thickness can affect encapsulated layer structural stability it is often more important that, also can affect the transmission effects of visible ray
And the efficiency of total reflection is such that it is able to affect the photoelectric transformation efficiency of final polysilicon chips.
The concrete composition of the encapsulated layer of different embodiments listed by table one and encapsulated layer is imitated to the opto-electronic conversion of polysilicon chips
The impact result of rate.
Table one
The concrete composition of the encapsulated layer of different comparative examples listed by table two and encapsulated layer is imitated to the opto-electronic conversion of polysilicon chips
The impact result of rate.
Table two
Although embodiment of the present invention is disclosed as above, it is not restricted to listed in description and embodiment
With, it can be applied to various suitable the field of the invention completely, for those skilled in the art, can be easily
Realize other modification, therefore under the general concept being limited without departing substantially from claim and equivalency range, the present invention does not limit
In specific details with shown here as the legend with description.
Claims (8)
1. a kind of cell piece for solar opto-electronic board, including：
Polysilicon chips；And
It is arranged on the encapsulated layer on described polysilicon chips plane of illumination；
Wherein, described encapsulated layer includes transmission layer and reflecting layer, and described reflecting layer is located at described polysilicon chips plane of illumination
Top, described transmission layer is located above described reflecting layer；Described transmission layer transmission sunlight, reflects infrared ray；Described reflecting layer will
The sunlight that part is reflected by the plane of illumination of described polysilicon chips is reflected back the illuminated of described polysilicon chips again
Face；
Described transmission layer includes the material of following weight portion：
2. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that described reflecting layer is by multiple
Hyalomitome glass blocks in equilateral triangle are sequentially arranged composition.
3. the cell piece for solar opto-electronic board according to claim 2 is it is characterised in that described hyalomitome glass blocks
Material including following weight portion：
4. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that described styrene-fourth two
In alkene copolymer, cinnamic content is 37～38wt%.
5. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that described styrene-fourth two
The number-average molecular weight of alkene copolymer is 2300～2400g/mol.
6. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that described poly terephthalic acid
The number-average molecular weight of glycol ester is 5500～5600g/mol.
7. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that described transmission layer also includes
The lithium bromide of 0.3～0.4 weight portion.
8. the cell piece for solar opto-electronic board according to claim 1 is it is characterised in that the thickness of described transmission layer
For 20～30 μm, the thickness in described reflecting layer is 0.5～0.7mm.
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| CN201510305036.5A CN104993000B (en) | 2015-06-05 | 2015-06-05 | A kind of cell piece for solar opto-electronic board |
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| FR3045034B1 (en) * | 2015-12-15 | 2019-06-07 | Saint-Gobain Glass France | THERMAL CONTROL GLAZING WITH PROTECTIVE POLYMER FILM |
| CN113889545B (en) * | 2021-09-30 | 2024-03-22 | 浙江晶科能源有限公司 | Back plate of photovoltaic module and photovoltaic module |
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| KR101065483B1 (en) * | 2009-09-28 | 2011-09-20 | 고려대학교 산학협력단 | Sunlight concentrating device for solar cell with superior transmittance and light condensation and the method for producing thereof |
| CN102184996A (en) * | 2011-03-23 | 2011-09-14 | 浙江恒基光伏电力科技股份有限公司 | Method for improving temperature stability of photovoltaic module and solar photovoltaic module |
| JP6288902B2 (en) * | 2011-07-13 | 2018-03-07 | 東洋アルミニウム株式会社 | Reflective back surface protection sheet for solar cell |
| CN102287722A (en) * | 2011-09-07 | 2011-12-21 | 上海蓝光科技有限公司 | Direct type backlight source module |
| JP5935048B2 (en) * | 2011-12-02 | 2016-06-15 | パナソニックＩｐマネジメント株式会社 | Solar cell module |
| CN203674226U (en) * | 2013-11-27 | 2014-06-25 | 海润光伏科技股份有限公司 | Solar cell module with high transmission on forward direction and high reflection on backward direction |
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Effective date of registration: 20180211 Address after: 226600, No. 188 west the Yellow Sea Road, Haian Town, Haian County, Jiangsu, Nantong Patentee after: Guan Xiang solar technology Haian Co., Ltd. Address before: Hu high tech Zone of Suzhou City, Jiangsu province 215151 Guan Hu Yang Road No. 88 Patentee before: Suzhou Jiayida Electrical Appliances Co.,Ltd. |
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