CN102299195A

CN102299195A - Quantum-cutting photovoltaic module

Info

Publication number: CN102299195A
Application number: CN2011101867532A
Authority: CN
Inventors: 张恩理
Original assignee: HUNAN TLNZ SOLAR TECHNOLOGY Co Ltd
Current assignee: HUNAN TLNZ SOLAR TECHNOLOGY Co Ltd
Priority date: 2011-07-05
Filing date: 2011-07-05
Publication date: 2011-12-28

Abstract

A quantum-cutting photovoltaic module is disclosed. A current photovoltaic module has a problem of low efficiency. By using the quantum-cutting photovoltaic module of the invention, the above problem can be solved. A packaging membrane contains rare earth elements which possess a quantum cutting effect. For instance, BaF2, Re<3+>, Yb<3+> and the like are added in an EVA membrane. Photoelectric conversion efficiency of a cell can be raised. The quantum-cutting photovoltaic module is mainly used for solar power generation.

Description

Quantum cutting photovoltaic module

Technical field

The present invention relates to a kind of photovoltaic module, especially have the quantum clipping function.

Background technology

At present, the development of mankind nowadays society has proposed more and more higher requirement to the quality and quantity of the energy, and there are two problems in the existing fossil energy that accounts for absolute main stem status: the one, and exhausted and non-renewable day by day; The 2nd, in exploitation and the use to the severe contamination of environment.Therefore, the reproducible energy of seeking a kind of green replaces existing fossil energy to become the key subjects of pendulum on the human development road.

Solar energy is a kind of inexhaustible, does not have the clean energy resource that pollutes, has obtained development at full speed during the decade near two, three.But expensive with low conversion efficiency has become a bottleneck on its road for development.In recent years, people had adopted the technology of doped with rare-earth elements formation quantum-cutting effect in the assembly face glass, and it can improve experiment and application proof the conversion efficiency of photovoltaic module effectively and not increase too many cost.It is a feasible technology.But also there are some shortcomings:

1. manufacturing process relative complex, quality are difficult to control relatively, and manufacturing cost is higher relatively;

2. transportation, keeping are damaged easily, cause transportation, and the keeping cost is higher relatively;

3. the back glass light transmittance that mixes descends, and causes bigger light loss, and the quantum-cutting effect is reduced.

Summary of the invention

The purpose of this invention is to provide a kind of quantum cutting photovoltaic module.

The technical solution adopted for the present invention to solve the technical problems is: mix a certain amount of rare earth element and produce the quantum-cutting effect in solar module front encapsulating film such as EVA film.

When producing the EVA that photovoltaic module uses, VA content is 28-38% among the described EVA, adds BaF equably in described vinyl acetate liquid ₂Micro mist mixes Re simultaneously ³⁺, Yb ³⁺Ion makes Re ³⁺, Yb ³⁺Ions diffusion is to BaF ₂In, form the rare earth element particulate that possesses quantum cutting effect.BaF ₂The percentage by weight that accounts for vinyl acetate is 0.15-0.3%; Re ³⁺, Yb ³⁺Ion concentration is BaF ₂1-15%, all the other production technologies of the back EVA that mixes are constant substantially with the technology of EVA by producing photovoltaic.This photovoltaic has the quantum-cutting effect with EVA.

That part of sun optical wavelength that crystal silicon solar energy battery can absorb is at 400nm-1100nm.That part of ultraviolet light wave of wavelength＜400nm and that part of infrared waves of wavelength＞1100nm can not be absorbed by the battery sheet.That part of ultraviolet light wave of its medium wavelength＜400nm accounts for 2.5% of whole sun light wave, the photon of this part light wave has very high energy, solar cell is the right device in the corresponding single electron hole of a single photon, even in the 400nm-1100nm wave band, the photon that those energy are higher than silicon energy gap (1.12ev) far away also can only inspire an electron hole pair, all the other energy that exceed all have been transformed into heat energy, this has not only wasted the energy of light wave, and the power output to solar cell has a negative impact because negative temperature coefficient is arranged voltage that too can battery.

Quantum-cutting has following effect:

1. the wavelength of the light wave of wavelength＜400nm is cut out to the 400-1100nm.Make it effectively to be absorbed by the battery sheet.

2. be that the above photon of silicon energy gap (energy gap of silicon is 1.12eV) twice is cut into two or more photons that can effectively be absorbed by the battery sheet with energy.

3. reduce the thermal effect of high-energy photons, thereby reduced the adverse effect of temperature battery sheet output voltage.

The operation principle of EVA quantum-cutting photovoltaic module:

When those wavelength in the sun light wave in the 400nm-1100nm scope and the high-energy photons of the ultraviolet light wave of wavelength＜400nm part shine Re among the EVA ³⁺Re in the time of on the ion ³⁺Ion is excited and is transitted to excitation level.Re ³⁺Ion as donor ion at once to being subjected to main Yb ³⁺Ion is implemented energy delivery, makes Yb ³⁺Ion transition is to the F excitation level, and and then transits to the F ground state level from the excitation level of F, and emit wavelength is at one or more photons of 400nm-1100nm and effectively absorbed by the battery sheet.

The invention has the beneficial effects as follows that it is compared with existing technology of mixing the formation quantum effect in face glass has following advantage:

1. mixing the light reflection that causes can be through glass and EVA, and the two secondary reflection major parts at two interfaces of glass and atmosphere retroeflection have again reduced the influence of the light transmittance decline that causes because of doping, thereby improved component efficiency on the battery sheet;

2.EVA film is close to the battery sheet, the light wave that its quantum effect produces can directly be radiated on the battery sheet, and compares in the glass, does not have scattering, or seldom scattering loss.This also helps the raising of battery sheet efficient;

3. doped with rare-earth elements is simpler than doping process in glass in EVA, and quality is more easy to control, and rate of finished products is higher, and this makes that part of cost that increases because of doping littler;

4. mixing increases glass or this part cost of EVA, and in transportation and keeping process, the latter is not fragile, and this makes the latter's transportation and take care of cost lower.

Description of drawings

Fig. 1 is one of embodiment of the invention light reflection schematic diagram.

Fig. 2 is two of an embodiment of the invention light reflection schematic diagram.

Fig. 3 is one of glass doped rare earth element particulate light reflection schematic diagram.

Fig. 4 is two of a glass doped rare earth element particulate light reflection schematic diagram

Among the figure: 1.EVA, 2. rare earth element particulate, 3. glass, 4. battery sheet.

Embodiment

At solar module front encapsulating film EVA(1 for example) mix a certain amount of rare earth element particulate (2) in the film and produce the quantum-cutting effect.Produce the EVA(1 that photovoltaic module is used) time, EVA(1) middle VA content is about 28-38%, adds BaF in vinyl acetate liquid equably ₂Micro mist mixes rhenium Re simultaneously ³⁺, ytterbium Yb ³⁺Ion, and allow rhenium Re ³⁺, ytterbium Yb ³⁺Ions diffusion is to BaF ₂In go, form the rare earth element particulate (2) possess quantum cutting effect.BaF ₂Be about 0.15-0.3% with the percentage by weight of vinyl acetate; Rhenium Re ³⁺, ytterbium Yb ³⁺Ion concentration is BaF ₂1-15%, back EVA(1 mixes) all the other production technologies by producing photovoltaic high-performance EVA(1) technology constant substantially.

Below in conjunction with embodiment Fig. 1, Fig. 2, contrast prior art Fig. 3, Fig. 4, further analyze explanation efficient of the present invention and improve situation:

Fig. 1, incident light produce reflection when running into rare earth element particulate (2), reverberation arrives EVA(1) part reflected back EVA and being radiated on the battery sheet (4) during with the interface of glass (3), a part enters glass (3) through refraction.This part refract light some reflected back glass (3) and shining on the battery sheet (4) again when arriving the interface of glass (3) and atmosphere, remaining part is got back in the atmosphere through refraction.

Fig. 2, be radiated on the battery sheet through the light wave part behind the quantum-cutting, a part is returned among the EVA by the surface reflections of battery sheet and EVA, when this part reverberation arrives the interface of EVA and glass, a part is reflected and returns to be radiated on the battery sheet, and a part arrives after reflecting in the glass, when this part refract light arrives the interface of glass and atmosphere, some is reflected back toward glass and shines on the battery sheet again, and remaining part comes back in the atmosphere after birefringence.

Fig. 3, incident light reflects when running into doped rare earth element particulate (2), and reverberation is reflected back in the interface part of glass (3) and atmosphere and is radiated on the battery sheet (4), and a part is got back in the atmosphere through refraction.

Fig. 4, be radiated on the battery sheet through the light part behind the quantum-cutting, a part is got back in the glass by the boundary reflection of glass and EVA, and a part was radiated on the battery sheet through secondary reflection when this part reverberation arrived the interface of glass and atmosphere, has a part ofly got back in the atmosphere again after reflecting.

Comparison diagram 1 and Fig. 3 as can be known, mix forming the assembly of quantum-cutting effect forms the quantum-cutting effect than mixing in glass assembly in EVA can more effective utilization to the light wave after cutting out, efficient of the present invention has in other words increased.

Comparison diagram 2 and Fig. 4 as can be known, the assembly that the contrast of the assembly that mixes in EVA is mixed in glass, doped rare earth element particulate time ripple utilance height among the EVA, promptly the light wave utilization ratio of Fig. 2 is higher than Fig. 4.

Claims

1. a quantum cutting photovoltaic module comprises glass outer, encapsulating film, battery sheet, it is characterized in that: contain the rare earth element particulate that possesses quantum cutting effect in the described encapsulating film.

2. quantum cutting photovoltaic module according to claim 1, it is characterized in that: described encapsulating film is an ethylene-vinyl acetate copolymer, i.e. EVA film, VA content is 28%-38% in the described EVA film, described VA evenly adds for example BaF in the vinyl acetate ₂Micro mist mixes rhenium Re simultaneously ³⁺, ytterbium Yb ³⁺Ion makes described rhenium Re ³⁺, ytterbium Yb ³⁺Ions diffusion is to described BaF ₂In the micro mist, form the described rare earth element particulate that possesses quantum cutting effect; Described BaF ₂The percentage by weight that accounts for described vinyl acetate is 0.15-0.3%; Described rhenium Re ³⁺, ytterbium Yb ³⁺Ion concentration is described BaF ₂1-15%.