CN104980850B - Double diaphragm acoustic apparatus - Google Patents
Double diaphragm acoustic apparatus Download PDFInfo
- Publication number
- CN104980850B CN104980850B CN201510223860.6A CN201510223860A CN104980850B CN 104980850 B CN104980850 B CN 104980850B CN 201510223860 A CN201510223860 A CN 201510223860A CN 104980850 B CN104980850 B CN 104980850B
- Authority
- CN
- China
- Prior art keywords
- vibrating diaphragm
- diaphragm
- main vibrating
- double
- suboscillating membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of double diaphragm being used in MEMS (MEMS) microphone, which includes：Main vibrating diaphragm, the main vibrating diaphragm limit the opening across the main vibrating diaphragm；And it is set to the suboscillating membrane in the opening.The main vibrating diaphragm is connected to the suboscillating membrane by least one coupling part.For giving sound level, the main vibrating diaphragm has the first Oscillation Amplitude, and the suboscillating membrane has the second Oscillation Amplitude than the first Oscillation Amplitude bigger.
Description
Technical field
This application involves acoustic apparatus, more particularly, to being used by these equipment and use in such devices
Vibrating diaphragm.
Background technology
Various types of acoustic apparatus have been used for many years.A kind of example of acoustic apparatus is microphone.Generally, wheat
Gram wind converts sound waves into electric signal.Microphone sometimes include multiple components, these components include microelectromechanical-systems (MEMS) and
Integrated circuit (for example, application-specific integrated circuit (ASIC)).MEMS chip (die) usually has the vibrating diaphragm and the back of the body being arranged on
Plate.The change of acoustic energy moves vibrating diaphragm, this changes the capacitance for involving backboard, thus generates electric signal.MEMS chip is usual
Both then it is either fenced up together by covering or covering on substrate with being set to pedestal together with ASIC.
Vibrating diaphragm in above device is usually made of elastic material, such as mantle.Current vibrating diaphragm is also structured to monolithic reality
Body.However, with current monolithic vibrating diaphragm, the sensitivity that vibrating diaphragm can reach is limited.
Mode before is without the use of successfully extension vibrating diaphragm.Because of above-mentioned limitation, the mode before these results in
Some users are discontented with.
Invention content
Provide the double diaphragm with single backboard (including main vibrating diaphragm and suboscillating membrane).This method is improved than pervious method
Sensitivity.In one aspect, suboscillating membrane is supported by multiple beams (or other stents) rather than free floating (freely floats
Dynamic i.e. no any kind of limitation or the connection with other elements).On the other hand, main vibrating diaphragm is supported by single beam, therefore
It is floating ring.Still in other respects, suboscillating membrane benefits from the extreme plasticity that is provided by supporting beam and from free floating
The born plasticity of main vibrating diaphragm.Compared with single vibrating diaphragm method before, this method provides improved sensitivity and signal-to-noise ratio (SNR)
Performance, and total vibrating diaphragm plasticity only is designed to control by main free floating.
In many embodiments, the double diaphragm that one kind is used in MEMS (MEMS) microphone includes：Main vibrating diaphragm,
The main vibrating diaphragm limits the opening across the main vibrating diaphragm；At least one coupling part；And the suboscillating membrane in the opening is set to,
Wherein, the main vibrating diaphragm is connected to the suboscillating membrane and wherein, the main vibrating diaphragm pair by least one coupling part
There is the first Oscillation Amplitude in given sound level, the suboscillating membrane has the second vibration width for the given sound level
Degree, second Oscillation Amplitude are more than first Oscillation Amplitude.
In some instances, at least one coupling part includes multiple coupling parts.In other examples, it is described more
The periphery of a coupling part, the inner circumferential of the main vibrating diaphragm and the suboscillating membrane defines multiple holes.
In some respects, at least one coupling part includes supporting beam.In other aspects, the supporting beam is U-shaped
's.
In some instances, at least one of the main vibrating diaphragm and the suboscillating membrane are circular.In other examples,
The main vibrating diaphragm is entirely around the suboscillating membrane.In some other examples, the main vibrating diaphragm and the suboscillating membrane are coplanar.
In some respects, the second movement of the first movement of the main vibrating diaphragm and the suboscillating membrane is for changing close to described
Double diaphragm is positioned and joined to the current potential at the backboard of the double diaphragm.
Description of the drawings
For a more complete understanding of the present invention, described further below and attached drawing will be referred to, wherein：
Figure 1A includes the stereogram of the multiple portions of the microphone according to each embodiment of the present invention；
Figure 1B includes the sectional view of the microphone of Figure 1A according to each embodiment of the present invention；
Fig. 2 includes the sectional block diagram of the backboard and double diaphragm according to each embodiment of the present invention；
Fig. 3 A include the sectional view of the backboard and double diaphragm according to each embodiment of the present invention；
Fig. 3 B include the sectional view of the backboard and single vibrating diaphragm according to each embodiment of the present invention.
It will be understood by those skilled in the art that for simplicity, the element in attached drawing is schematical.It will also be understood that may be with
Specific order of occurrence explanation describes certain actions and/or step, skilled person will understand that about sequence
This species specificity is actually not necessary.It will also be understood that terms and expressions used herein have common meaning, as being directed to it
The meaning of these terms and expressions given of corresponding respective investigation field, unless in addition proposing specific meanings in text.
Specific embodiment
Referring now to Figure 1A and Figure 1B, MEMS (MEMS) microphone 100 includes substrate 102.Substrate 102 can be
Any type of pedestal, such as printed circuit board.The other examples of substrate are also possible.
It is MEMS chip 104 to be set on substrate 102.MEMS chip 104 includes vibrating diaphragm 106 and backboard 108.It is such as following
It will be discussed in greater detail, vibrating diaphragm 106 is double diaphragm.Sound enters microphone 100 by opening 103, which extends through base
Plate 102.Alternatively, opening 103 can extend through lid or cover 111, and the lid or cover covering substrate 102 and covering are set to substrate
Element on 102.
Double diaphragm 106 includes main vibrating diaphragm and suboscillating membrane.In one example, tie-beam (or other types of stent) connects
Connect main vibrating diaphragm and suboscillating membrane.In one aspect, suboscillating membrane is supported by multiple beams (or other stents), is not free floating
(free floating, that is, no any kind of limitation or the not connection with other elements).In other respects, main vibrating diaphragm is by single
Beam supports, therefore is floating ring.In addition in terms of other, suboscillating membrane benefits from the extreme plasticity provided by supporting beam.Double diaphragm
106 other configurations and layout are possible.
Application-specific integrated circuit (ASIC) 109 is also disposed on substrate 102.ASIC 109 can perform various signal processing work(
Can, to mention its purposes example.MEMS chip 104 is connected to ASIC108 by conducting wire 110.ASIC 108 passes through
Conducting wire 112 is connected to substrate.
In one operation example of microphone 100, sound enters opening 103 and mobile vibrating diaphragm 106.The movement of vibrating diaphragm 106
Change the capacitance for involving backboard 108, thus generate electric signal.Electric signal can be sent to ASIC 109 by conducting wire 110.
After ASIC 109 handles signal, processed signal is sent by conducting wire 112, which is connected on the bottom of substrate 102
Solder joint.Other electronic devices can be connected to these solder joints by user.For example, microphone can be arranged on cellular phone or
In personal computer, the appropriate circuitry of these devices can be connected to solder joint.As places other in text are explained, main vibrating diaphragm and pair
Vibrating diaphragm can have different movings range, and this provides higher sensitivity for microphone.
Referring now to Figure 2, describe the vibrating diaphragm 204 of acoustic apparatus (such as microphone) and an example of backboard 202.
Backboard 202 includes multiple holes or opening 212.The purpose in hole 212 be to provide voice transmission, pressure release and/or
Pressure is balanced.Multiple columns 210 provide the support to backboard 202.Backboard includes polysilicon layer 206 and silicon nitride layer 208.
The purpose of polysilicon layer 206 is acquisition and perceives the signal generated due to vibrating diaphragm movement.The purpose of silicon nitride layer 208
It is mechanical support polysilicon layer 206.Backboard 202 is electrically charged.As vibrating diaphragm 204 moves, the electricity between backboard 202 and vibrating diaphragm 204
Position changes, and thus generates electric signal.If sound moves vibrating diaphragm 204, then electric signal illustrates sound.
Double diaphragm 204 includes main vibrating diaphragm 220 and suboscillating membrane 222.Main vibrating diaphragm 220 and suboscillating membrane 222 are connected with supporting beam 224
Together.Hole 226 is provided between main vibrating diaphragm 220 and suboscillating membrane 222, supporting beam 224 intersects hole 226.
Generally and in this example, main vibrating diaphragm 220 is around suboscillating membrane 222.Main vibrating diaphragm 220 and suboscillating membrane 222
Overall shape is round.The other examples of the shape and configuration of double diaphragm are possible.
The overall shape of beam 224 is U-shaped in this example.However, other shapes are possible.Each portion of beam 224
Thickness, length and the width divided can also change.
Suboscillating membrane 222 can be cut in main vibrating diaphragm 220 in one aspect.For example, it is partly led by using standard
Body etching process.As shown in the figure, bent beam 224 is also cutting, and support suboscillating membrane 222.Beam 224 allows suboscillating membrane 222
Extreme plasticity, this improves the sensitivity of microphone and signal-to-noise ratio (SNR).
The machine of vibrating diaphragm flexibility and vibrating diaphragm under sound pressure is represented by " plasticity " (as used in the text)
Tool Oscillation Amplitude.Generally, the vibrating diaphragm of high plasticity is highly sensitive.By " sensitivity " (as used in the text) come
Represent microphone output signal intensity, generally, more highly sensitive microphone will be relative to given and fixed sound
Input generates stronger electric signal.
Referring now to Fig. 3 A and Fig. 3 B, the operation example of this method is described.
Fig. 3 A include backboard 302, main vibrating diaphragm 320 and suboscillating membrane 322.As shown in the figure, suboscillating membrane 322 towards by marked as
Direction movement shown in 324 arrow.Main vibrating diaphragm 320 is also moved in the same direction.However, the height 326 that suboscillating membrane 322 reaches
The height 328 reached more than main vibrating diaphragm 320.In other words, for sound level give and fixed, suboscillating membrane 322 will have
There is the Oscillation Amplitude of bigger.
Fig. 3 B show that in the case of no suboscillating membrane 322, mobile range 330 is more much smaller than mobile range 326.By
This, the more or increased vibrations or movement of suboscillating membrane 322 cause microphone more highly sensitive and higher SNR.
As shown in the figure, internal suboscillating membrane 322 has the moving range than external main 320 bigger of vibrating diaphragm.It in the design can be with
Consider various factors, shape, size and the other characteristics of suboscillating membrane.For example, in design or construction suboscillating membrane, thus it is possible to vary
The diameter of suboscillating membrane, the quantity of " notch " (that is, empty clear area), the width of capacity, the shape of beam and beam quantity.This
A little factors and characteristic can be adjusted to change the sensitivity of vibrating diaphragm on demand, to adapt to the needs of specific user or system.
Such as far sound field speech recognition and high-fidelity record are particularly advantageous to by using the larger sensitivity that suboscillating membrane reaches
The application of sound.The other examples for the application that these methods are particularly useful are possible.
Although the method for described in the text is related to double diaphragm system it should be appreciated that these methods, which can be applied to have, appoints
The system of meaning quantity vibrating diaphragm.
Described in the text the preferred embodiment of the present invention, this includes the best side known for inventor for realizing the present invention
Formula.It should be appreciated that the embodiment shown is only schematical, should not be taken to limit the scope of the present invention.
Cross reference to related applications
The application asks the U.S. Provisional Application No. on April 10th, 2014 " double diaphragm acoustic apparatus " submitting, entitled
The priority of 61/977, No. 895, the content of the U.S. Provisional Application are incorporated herein by reference in its entirety.
Claims (9)
1. a kind of double diaphragm in MEMS condenser microphone, the double diaphragm includes：
Main vibrating diaphragm, the main vibrating diaphragm limit the opening across the main vibrating diaphragm；
At least one coupling part；
The suboscillating membrane being set in the opening, the main vibrating diaphragm are connected to the pair by least one coupling part and shake
Film,
Wherein, the main vibrating diaphragm has the first Oscillation Amplitude for given sound level, and the suboscillating membrane is for the given sound
Sound grade has the second Oscillation Amplitude, and second Oscillation Amplitude is more than first Oscillation Amplitude.
2. double diaphragm according to claim 1, wherein, at least one coupling part includes multiple coupling parts.
3. double diaphragm according to claim 2, wherein, the multiple coupling part, the inner circumferential of the main vibrating diaphragm, Yi Jisuo
The periphery for stating suboscillating membrane defines multiple holes.
4. double diaphragm according to claim 1, wherein, at least one coupling part includes supporting beam.
5. double diaphragm according to claim 4, wherein, the supporting beam is U-shaped.
6. double diaphragm according to claim 1, wherein, at least one of the main vibrating diaphragm and the suboscillating membrane are round
's.
7. double diaphragm according to claim 1, wherein, the main vibrating diaphragm is entirely around the suboscillating membrane.
8. double diaphragm according to claim 1, wherein, the main vibrating diaphragm and the suboscillating membrane are coplanar.
9. double diaphragm according to claim 1, wherein, the first movement of the main vibrating diaphragm and the second of the suboscillating membrane is moved
The dynamic current potential being positioned and joined to for changing the close double diaphragm at the backboard of the double diaphragm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461977895P | 2014-04-10 | 2014-04-10 | |
| US61/977,895 | 2014-04-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104980850A CN104980850A (en) | 2015-10-14 |
| CN104980850B true CN104980850B (en) | 2018-06-12 |
Family
ID=54276846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510223860.6A Active CN104980850B (en) | 2014-04-10 | 2015-04-08 | Double diaphragm acoustic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104980850B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10367430B2 (en) * | 2016-01-11 | 2019-07-30 | Infineon Technologies Ag | System and method for a variable flow transducer |
| CN108513241B (en) * | 2018-06-29 | 2024-04-19 | 潍坊歌尔微电子有限公司 | Vibration sensor and audio device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874616A (en) * | 2005-06-03 | 2006-12-06 | 瑞声声学科技(深圳)有限公司 | Capacitance type sound sensor in micro mechanical and electrical structure |
| CN101453683A (en) * | 2008-12-26 | 2009-06-10 | 瑞声声学科技(深圳)有限公司 | Silicon capacitor type microphone |
| CN101883305A (en) * | 2010-04-27 | 2010-11-10 | 瑞声声学科技(深圳)有限公司 | Diaphragm and silicon-based microphone employing diaphragm |
-
2015
- 2015-04-08 CN CN201510223860.6A patent/CN104980850B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874616A (en) * | 2005-06-03 | 2006-12-06 | 瑞声声学科技(深圳)有限公司 | Capacitance type sound sensor in micro mechanical and electrical structure |
| CN101453683A (en) * | 2008-12-26 | 2009-06-10 | 瑞声声学科技(深圳)有限公司 | Silicon capacitor type microphone |
| CN101883305A (en) * | 2010-04-27 | 2010-11-10 | 瑞声声学科技(深圳)有限公司 | Diaphragm and silicon-based microphone employing diaphragm |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104980850A (en) | 2015-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5799619B2 (en) | Microphone unit | |
| TWI508574B (en) | Microphone unit | |
| JP5325554B2 (en) | Voice input device | |
| US9521499B2 (en) | Electronic device with large back volume for electromechanical transducer | |
| JP5321111B2 (en) | Microphone unit | |
| JP2010187076A (en) | Microphone unit | |
| JP2009071813A (en) | Vibration transducer | |
| US20130028459A1 (en) | Monolithic Silicon Microphone | |
| US20150296307A1 (en) | Dual diaphragm and dual back plate acoustic apparatus | |
| US8363859B2 (en) | Microelectromechanical system microphone package structure | |
| TW201543906A (en) | Optimized back plate used in acoustic devices | |
| WO2009142250A1 (en) | Integrated circuit device, sound inputting device and information processing system | |
| CN109005489A (en) | Microphone apparatus | |
| CN104980850B (en) | Double diaphragm acoustic apparatus | |
| JP5636795B2 (en) | Microphone unit | |
| US20160277846A1 (en) | Acoustic device with one or more trim capacitors | |
| KR20090053721A (en) | Microphone system, sound input apparatus and method for manufacturing the same | |
| US9420365B2 (en) | Silicon condenser microphone | |
| JP2008136195A (en) | Condenser microphone | |
| US9953628B1 (en) | Microphone device | |
| CN117616287A (en) | Compact vibration sensor with piezoelectric readout | |
| GB2466776A (en) | Bootstrapping to reduce the effect of bond pad parasitic capacitance in a MEMS microphone circuit | |
| WO2014001010A1 (en) | Microphone arrangement comprising a stack of mems -microphone and interface - chip | |
| JP6498453B2 (en) | Contact microphone | |
| CN109451383A (en) | A kind of microphone |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |