CN104979437A - 一种基于芯片工艺制程的led灯丝制备方法 - Google Patents
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Abstract
一种基于芯片工艺制程的LED灯丝制备方法,包括以下步骤:(1)制备发光二极管芯片;(2)将发光二极管芯片沿N型GaN层的上表层进行半切;(3)沿按固定周期刻蚀出的台面进行裂片,使发光二极管芯片成为独立的芯片单元,未切开的衬底成为承载各个芯片单元的基板;(4)将相邻芯片单元进行连线导通;(5)在各个芯片单元上制作荧光胶包覆层,将各个芯片单元完全包覆。本发明将LED芯片制程技术与封装技术进行融合,解决了LED灯丝制程中对散热起关键作用的基板选择以及荧光粉与基板剥离等问题,成本降低50%,可直接进行封装,无需进行点胶、固晶等操作,解决现行封装工艺的点胶、芯片摆歪、芯片塌陷等问题。
Description
技术领域
本发明涉及一种用于LED灯丝的制作方法,属于LED灯丝制备技术领域。
背景技术
LED灯丝具有出色的性能,可以实现360度全角度发光,大角度发光且不需加透镜,就可实现立体光源,带来前所未有的照明体验。另外,其具有白炽灯相似的形态和配光曲线,是真正意义上的代替白光炽最理想的光源。
目前LED灯丝灯主要由LED灯丝、驱动电源、玻璃灯柱支架、玻璃泡、灯头五金件几部分组成。这些成品组件除了LED灯丝其它都是低成本的材料,材料成本并不高,然而现在最高成本LED灯丝的生产工艺复杂(切割成本高),生产效率不高(自动化程度低),导致其生产成本始终较高,根据统计,LED灯丝占据成品BOM(物料清单)成本的80%左右。
但是LED灯丝灯最大问题在于散热,若能将热散发出来,可减少许多成本,而对于散热起关键作用的就是基板,即对于基板的传导散热功能提出更高的要求。一般玻璃导热率不到5W/(m·℃),为防止热传导不出来不得不降低电流,有些封装厂商在透明板下使用蓝宝石,但是又带来成本大幅度上升。
不过,针对灯丝灯产品,目前封装厂都在追求更高的性价比,同时也在力图提升光色一致性、抗冷热冲击性能、寿命等等技术参数。由于工艺上的差异,对材料的要求各异,这也导致相关的材料厂商苦不堪言,疲于应对。
中国专利文献CN 104319342公开的《一种LED灯丝》,包括透明基板以及设置于透明基板上的LED晶片,所述LED晶片通过金属导线电性连接形成通路,所述基板固晶的一面上通过物理或化学的方式形成有荧光胶层,所述LED晶片固置于荧光胶层上且完全位于荧光胶层范围内,所述晶片上通过点胶或模压方式形成有荧光胶包覆层,所述荧光胶包覆层完全包覆所述LED晶片以及导线。
但是上述灯丝生产工艺复杂,生产效率不高(自动化程度低),导致其成本成本价格还比较贵,比如:物料成本(散热好的基板)、人工成本、效率、良率、研发成本;并存在散热性差以及荧光粉与基板受热易剥离等问题,另外,还存在现行封装工艺共有的点胶异常、芯片摆歪、芯片塌陷等问题。
发明内容
针对现有以上的技术不足,本发明提供了一种低成本、高产出率的基于芯片工艺制程的LED灯丝制备方法。
本发明的基于芯片工艺制程的LED灯丝制备方法,包括以下步骤:
(1)制备发光二极管(LED)芯片;
通过MOCVD工艺依次在蓝宝石衬底上制备GaN层、N型GaN层、量子阱有源区、P型GaN层和透明导电层,在透明导电层上制作P电极,在N型GaN层上通过台面制作N电极,制成发光二极管芯片;并按固定周期在每个周期单元两端均刻蚀出台面(采用ICP刻蚀),刻蚀深度到达衬底上表面;刻蚀深度为70μm-75μm;
(2)将步骤(1)制备的发光二极管芯片沿N型GaN层的上表层进行半切,半切深度为60μm-70μm;
这样,实现了对发光二极管的水平环切,在蓝宝石衬底上形成缝隙,为后续的芯片串联做准备。
(3)沿按固定周期刻蚀出的台面进行裂片,使发光二极管芯片成为独立的芯片单元,未切开的衬底成为承载各个芯片单元的基板;
(4)将相邻芯片单元进行连线导通;
(5)在各个芯片单元上制作荧光胶包覆层,将各个芯片单元完全包覆。该基板厚度为35μm-45μm;
本发明将LED芯片制程技术与封装技术进行融合,突破了LED封装技术难以解决的难题,解决了LED灯丝制程中对散热起关键作用的基板选择以及荧光粉与基板剥离等问题,并且使从外延、芯片至LED灯丝的整体成本降低50%,可直接进行封装,无需进行点胶、固晶等操作,解决各封装企业产出率低的问题,同时解决现行封装工艺的点胶、芯片摆歪、芯片塌陷等问题。
附图说明
图1是本发明中制备的LED芯片的结构示意图。
图2是相邻芯片单元之间隔断缝隙示意图。
图3是本发明基于芯片工艺制程制备的LED灯丝的结构示意图。
图中:1、荧光胶包覆层,2、芯片单元,3、蓝宝石衬底,4、引脚,5、P电极,6、N电极,7、N型GaN层,8、GaN层,9、隔断间隙,10、透明导电膜,11、量子阱有源区,12、P型GaN层,13、台面,14、引线电极。
具体实施方式
本发明的基于芯片工艺制程的LED灯丝制备方法,制备过程是在LED芯片的外延生长、电极制作步骤完成后,对芯片进行逐颗半切;然后按照固定的周期进行裂片,对裂片后的单元芯片,通过金属导线电性对单元芯片连接形成通路,在LED芯片单元上制作荧光胶包覆层,完全包覆LED芯片单元。具体包括步骤如下:
(1)如图1所示,采用MOCVD工艺依次在Al2O3(蓝宝石)衬底3上制备GaN层8、N型GaN层7、量子阱有源区11、P型GaN层12和透明导电层10(参见图3)。在透明导电层10上制作P电极5,在N型GaN层7上制作台面,在该台面上制作N电极6,制成LED芯片。并按固定周期采用ICP在每个周期单元两端均刻蚀出台面13,刻蚀深度为70μm-75μm,到达衬底3上表面。在刻蚀出的台面13上制作金属引线电极14。
(2)将步骤(1)制备的LED芯片沿N型GaN7的上表层进行半切,半切深度60μm-70μm。
将LED芯片沿N型GaN7的上表层进行半切,实现了对所述发光二极管的水平环切,在蓝宝石衬底上形成隔断缝隙9,如图2所示,为后续的芯片单元连接做准备。另外,未切开的Al2O3(蓝宝石)衬底3成为承载各个芯片单元的基板,该基板厚度为35μm-45μm;
(3)将LED芯片按照固定周期沿ICP刻蚀出的台面13进行裂片,使之成为独立的芯片单元2(含未切开的衬底),各个芯片单元2均连接在未切开的衬底3上,如图3所示。
(4)将相邻芯片单元2之间进行连线导通,并由外侧芯片单元上ICP刻蚀出的台面13上的金属引线电极14接出引脚4。参见图1。
(5)在各个芯片单元2上通过物理、化学等方式形成荧光胶包覆层1,将各个芯片单元2完全包覆。最终制成如图1所示结构的LED灯丝。
Claims (4)
1.一种基于芯片工艺制程的LED灯丝制备方法,其特征是,包括以下步骤:
(1)制备发光二极管芯片;
通过MOCVD工艺依次在蓝宝石衬底上制备GaN层、N型GaN层、量子阱有源区、P型GaN层和透明导电层,在透明导电层上制作P电极,在N型GaN层上通过台面制作N电极,制成发光二极管芯片;并按固定周期在每个周期单元两端均刻蚀出台面,刻蚀深度到达衬底上表面;
(2)将步骤(1)制备的发光二极管芯片沿N型GaN层的上表层进行半切;
(3)沿按固定周期刻蚀出的台面进行裂片,使发光二极管芯片成为独立的芯片单元,未切开的衬底成为承载各个芯片单元的基板;
(4)将相邻芯片单元进行连线导通;
(5)在各个芯片单元上制作荧光胶包覆层,将各个芯片单元完全包覆。
2.根据权利要求1所述基于芯片工艺制程的LED灯丝制备方法,其特征是,所述步骤(1)中台面的刻蚀深度为70-75μm。
3.根据权利要求1所述基于芯片工艺制程的LED灯丝制备方法,其特征是,所述步骤(2)中半切深度为60μm-70μm。
4.根据权利要求1所述基于芯片工艺制程的LED灯丝制备方法,其特征是,所述步骤(3)中基板的厚度为35μm-45μm。
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Application publication date: 20151014 |