CN104975268A - Preparation method of metal tungsten thin film - Google Patents
Preparation method of metal tungsten thin film Download PDFInfo
- Publication number
- CN104975268A CN104975268A CN201510298874.4A CN201510298874A CN104975268A CN 104975268 A CN104975268 A CN 104975268A CN 201510298874 A CN201510298874 A CN 201510298874A CN 104975268 A CN104975268 A CN 104975268A
- Authority
- CN
- China
- Prior art keywords
- tungsten
- reaction chamber
- preparation
- stress
- nucleating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to the technical field of manufacturing of semiconductors, in particular to a preparation method of a metal tungsten thin film. The reaction temperature of gas in a reaction cavity is changed, and the amount of reaction gas is reduced, so that metal tungsten atoms are formed on the reaction cavity as many as possible; and then, the atoms fall on the surface of a nucleating layer and grow in order, and the metal tungsten thin film is formed. According to the technical scheme, stress of the metal tungsten thin film is effectively reduced, and compared with a traditional method, the method reduces the stress by 73%.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of preparation method of tungsten film.
Background technology
Along with the development of semiconductor technology, manufacture with metal oxide semiconductor techniques the prevailing technology that camera-sensor technology (CIS:CMOS image sensor) has become emerging imaging field.And wherein, metallic film has good visible reflectance conductive performance with it, and its reflection as incident light commonly used by the industry or isolation layer.Tungsten film has excellent visible reflectance performance and good high-temperature stability because of it, and making technology is simple, and adopt by most of main flow CIS manufacturer.
But tungsten film, because it is in high temperature production technique (about 395 DEG C), easily forms very high tensile stress (tensile, the W film of 1000 ~ 3000 dusts has the tensile stress of about 1759MPa).The formation of this high tensile stress, is easy to make full wafer wafer produce micro-deformation, and then can have a strong impact on visible ray conduction or isolated quality and quantity, finally can have a strong impact on the image quality of CIS product.
Therefore, the tungsten film how generating a kind of ultralow stress becomes a great problem that those skilled in the art face.
Summary of the invention
For above-mentioned Problems existing, the present invention discloses a kind of preparation method of ultralow stress tungsten film, to make film, there is lower stress, by improving the amount of temperature of reaction and minimizing tungsten hexafluoride (WF6) gas, W film is made to have the stress lower compared with conventional tungsten film, concrete, this technical scheme is:
A preparation method for tungsten film, wherein, be applied in the preparation technology of CIS sensor, described method comprises:
Semi-conductive substrate is provided;
Stratum nucleare is prepared in the surface of described semiconducter substrate;
Reactant gases is passed into, to form tungsten atom in this reaction chamber in reaction chamber;
Wherein, described tungsten atom falls to the surface of described nucleating layer in order, and with in-situ preparation ultralow stress tungsten film, the stress of this tungsten film, lower than the stress of common metal W film, forms a kind of ultralow stress.
Above-mentioned method, wherein, described ultralow stress tungsten film thickness is 1000 dust ~ 3000 dusts.
Above-mentioned method, wherein, passes into the reactant gases comprising tungsten hexafluoride and hydrogen in described reaction chamber.
Above-mentioned method, wherein, the temperature forming tungsten atom in described reaction chamber is 395 DEG C ~ 450 DEG C.
Above-mentioned method, wherein, the gas flow passing into tungsten hexafluoride in described reaction chamber is 45sccm ~ 55sccm.
Above-mentioned method, wherein, adopts tungsten hexafluoride and silane to prepare described nucleating layer at described semiconductor substrate surface.
Above-mentioned method, wherein, the temperature that described tungsten hexafluoride and silane form described nucleating layer is 290 DEG C ~ 310 DEG C.
Advantage of the present invention and the beneficial effect brought:
The preparation method of ultralow stress tungsten film disclosed by the invention, by the temperature in reaction chamber being adjusted to 39 DEG C 5 ~ 450 DEG C, and be 50sccm (per minute cubic centimetre) by the Flow-rate adjustment of tungsten hexafluoride in reaction chamber (WF6) (WF6), pass through the technical program, allow to a great extent tungsten atom generation in the reactor chamber, instead of the random growth of tungsten atom is generated at semiconductor substrate surface, the tungsten atom of final whereabouts prolongs the tungsten nucleating layer ordering growth of substrate, comparatively traditional method, pass through the technical program, the stress of tungsten film is made to reduce 73%.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more apparent.Mark identical in whole accompanying drawing indicates identical part.Proportionally can not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is preparation method's schema of tungsten film in the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further illustrated, but not as limiting to the invention.
Structure shown in Figure 1, the present embodiment provides a kind of preparation method of ultralow stress tungsten film, the stress of this tungsten film is the stress lower than common metal W film, form a kind of ultralow stress tungsten film, the method also reduces the amount of reactant gases by the temperature of reaction improved in reaction chamber simultaneously, increase tungsten hexafluoride (WF6) with this and hydrogen (H2) generates tungsten atom in the reactor chamber, the method specifically comprises the steps:
First, provide semi-conductive substrate, preferably, this semiconducter substrate material is titanium nitride.The surface continuing at described semiconducter substrate is prepared into stratum nucleare.
As a preferred embodiment of the invention, this nucleating layer is generated at the temperature of 290 DEG C-310 DEG C by tungsten hexafluoride (WF6) and silane (SiF4), and in the present embodiment, control temperature is 300 DEG C and forms this nucleating layer.
Then, in reaction chamber, pass into reactant gases, to form tungsten atom in this reaction chamber.
As a preferred embodiment of the invention, the reactant gases passed into is for comprising the gas of tungsten hexafluoride (WF6) and hydrogen (H2), wherein the gas flow of tungsten hexafluoride (WF6) is 45sccm-55sccm (per minute cubic centimetre) (such as 45sccm, 50sccm, 55sccm etc.), in the present embodiment, the flow passing into tungsten hexafluoride is 50sccm, is that 200sccm significantly reduces compared with the flow passing into tungsten hexafluoride in gas in routine techniques.
As a preferred embodiment of the invention, pass in the reactor chamber temperature that the gas comprising tungsten hexafluoride in reaction chamber (WF6) and hydrogen (H2) generates tungsten atom be 395 DEG C-450 DEG C (such as, 395 DEG C, 420 DEG C, 450 DEG C etc.), by 395 DEG C of raisings in routine techniques, to ensure that tungsten atom as much as possible is formed in reaction chamber, instead of be formed in the surface of semiconducter substrate.
Finally, by the atom of tungsten formed in the reactor chamber, drop to nucleating layer, along the crystalline phase ordering growth of nucleating layer, in-situ preparation, but not the growth of chaotic, be finally grown to the tungsten film that has ultralow stress.
Tungsten film growth has the characteristic of very strong apposition growth, the technical program mainly through improve temperature of reaction, with the activation energy of intensified response; Reduce by reducing reaction gas flow the possibility that tungsten atom is formed in semiconductor substrate surface simultaneously, thus farthest allow tungsten atom be formed in the reactor chamber, but not generate the random growth of tungsten atom at semiconductor substrate surface.Then the tungsten atom of generation is dropped to the tungsten nucleating layer surface of substrate, make tungsten atom on wafer, generate one and there is film (W film namely prepared in the application has lower stress compared to W film prepared by traditional technology) compared with low-stress, by the technical program, the tungsten film that the stress of ultralow stress tungsten film generates compared with traditional method has lacked 73%.
In sum, the preparation method of a kind of tungsten film disclosed by the invention, by changing the temperature of reaction of the gas in reaction chamber and reducing the amount of reactant gases, to make, tungsten atom is as much as possible is formed in reaction chamber, then the surface of nucleating layer is fallen to, ordering growth, forms a ultralow stress tungsten film.By the technical program, make tungsten film have ultralow stress, comparatively traditional method is compared, and reduces 73%.
It should be appreciated by those skilled in the art that those skilled in the art are realizing change case in conjunction with prior art and above-described embodiment, do not repeat at this.Such change case does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the usual manner in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. a preparation method for tungsten film, is characterized in that, be applied in the preparation technology of CIS sensor, described method comprises:
Semi-conductive substrate is provided;
Stratum nucleare is prepared in the surface of described semiconducter substrate;
Reactant gases is passed into, to form tungsten atom in this reaction chamber in reaction chamber;
Wherein, described tungsten atom falls to the surface of described nucleating layer in order, with in-situ preparation tungsten film.
2. the method for claim 1, is characterized in that, described tungsten film thickness is 1000 dust ~ 3000 dusts.
3. the method for claim 1, is characterized in that, passes into the reactant gases comprising tungsten hexafluoride and hydrogen in described reaction chamber.
4. the method for claim 1, is characterized in that, the temperature forming described tungsten atom in described reaction chamber is 395 DEG C ~ 450 DEG C.
5. the method for claim 1, is characterized in that, the gas flow passing into tungsten hexafluoride in described reaction chamber is 45sccm ~ 55sccm.
6. the method for claim 1, is characterized in that, adopts tungsten hexafluoride and silane to prepare described nucleating layer at described semiconductor substrate surface.
7. method as claimed in claim 6, it is characterized in that, the temperature adopting described tungsten hexafluoride and silane to form described nucleating layer is 290 DEG C ~ 310 DEG C.
8. the method for claim 1, is characterized in that, the material of described semiconducter substrate is titanium nitride membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510298874.4A CN104975268A (en) | 2015-06-03 | 2015-06-03 | Preparation method of metal tungsten thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510298874.4A CN104975268A (en) | 2015-06-03 | 2015-06-03 | Preparation method of metal tungsten thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104975268A true CN104975268A (en) | 2015-10-14 |
Family
ID=54272223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510298874.4A Pending CN104975268A (en) | 2015-06-03 | 2015-06-03 | Preparation method of metal tungsten thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104975268A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113166929A (en) * | 2018-12-05 | 2021-07-23 | 朗姆研究公司 | Void free low stress fill |
| US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020076924A1 (en) * | 2000-12-20 | 2002-06-20 | Samsung Electronics Co., Ltd. | Method for forming an electrical interconnection providing improved surface morphololgy of tungsten |
| CN1366334A (en) * | 2000-12-28 | 2002-08-28 | 阿尔卡塔尔公司 | Method of chemical gaseous phase sedimenting tungsten on semiconductor substrate |
| CN103132046A (en) * | 2011-11-25 | 2013-06-05 | 东京毅力科创株式会社 | Tungsten film forming method |
-
2015
- 2015-06-03 CN CN201510298874.4A patent/CN104975268A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020076924A1 (en) * | 2000-12-20 | 2002-06-20 | Samsung Electronics Co., Ltd. | Method for forming an electrical interconnection providing improved surface morphololgy of tungsten |
| CN1366334A (en) * | 2000-12-28 | 2002-08-28 | 阿尔卡塔尔公司 | Method of chemical gaseous phase sedimenting tungsten on semiconductor substrate |
| CN103132046A (en) * | 2011-11-25 | 2013-06-05 | 东京毅力科创株式会社 | Tungsten film forming method |
Non-Patent Citations (1)
| Title |
|---|
| 王季陶等: "CVD钨的淀积和性质研究", 《微电子学与计算机》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
| CN113166929A (en) * | 2018-12-05 | 2021-07-23 | 朗姆研究公司 | Void free low stress fill |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102386067B (en) | Epitaxial growth method for effectively restraining self-doping effect | |
| CN102169853B (en) | Method of forming an integrated circuit structure | |
| CN102102220B (en) | Preparation method of graphene on diamond (111) surface | |
| JP4719314B2 (en) | Epitaxial silicon carbide single crystal substrate and manufacturing method thereof | |
| JP6524233B2 (en) | Method of manufacturing epitaxial silicon carbide single crystal wafer | |
| CN108166056A (en) | A kind of growing method that can effectively reduce silicon carbide epitaxy surface defect | |
| JP2009283916A5 (en) | ||
| JP6742477B2 (en) | Epitaxial silicon carbide single crystal wafer manufacturing method and epitaxial silicon carbide single crystal wafer | |
| CN110318030A (en) | A kind of self-supporting superfine nano-crystalline diamond thick-film | |
| KR20130045492A (en) | Wafer and method of fabrication thin film | |
| CN110144567A (en) | The method of super thick silicon carbide gradient coating is prepared on silicon substrate using chemical vapor deposition process | |
| CN104975268A (en) | Preparation method of metal tungsten thin film | |
| Heath et al. | Nanocrystal seeding: A low temperature route to polycrystalline Si films | |
| CN103578968B (en) | The structure of holohedral form silicon epitaxy process photoetching alignment mark and making method | |
| TWI760144B (en) | Epitaxy method for super-heavy red phosphorus-doped substrate | |
| JPH04271110A (en) | X-ray mask and its manufacture | |
| US11220743B2 (en) | Composite substrate and manufacturing method thereof | |
| CN104810248A (en) | Original position processing method applicable to 4-degree and 8-degree off-axis silicon surface silicon carbide substrates | |
| CN105633175A (en) | Technology capable of lowering reject ratio of appearance of anti-PID battery | |
| CN106169414A (en) | A kind of preparation method of stress controllable type silica-base film | |
| JP6800185B2 (en) | Graphene boundary control method | |
| CN113174582A (en) | Method for preparing diamond film by microwave plasma chemical vapor deposition method | |
| JP5887742B2 (en) | Diamond substrate | |
| CN103646849B (en) | A kind of technique reducing aluminum thin film generation hillock shape defect | |
| CN107863394A (en) | A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151014 |
|
| RJ01 | Rejection of invention patent application after publication |