CN104966742A - 等电位网络三结砷化镓太阳能电池阵结构及制造方法 - Google Patents
等电位网络三结砷化镓太阳能电池阵结构及制造方法 Download PDFInfo
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Abstract
本发明公开了一种等电位网络三结砷化镓太阳能电池阵结构及制造方法,其特征在于:每个三结砷化镓太阳能电池的效率大于28%;在每个三结砷化镓太阳能电池上粘贴有抗辐照玻璃盖片;在每个抗辐照玻璃盖片上蒸镀有MgF2减反射膜,在MgF2减反射膜上蒸镀有ITO透明导电膜;在ITO透明导电膜上蒸镀有一对ITO膜金属电极;每对ITO膜金属电极之间的电阻值不大于10kΩ;每个三结砷化镓太阳能电池组件由M个三结砷化镓太阳能电池组成,M个三结砷化镓太阳能电池的ITO膜金属电极之间通过ITO互连片依次串联;N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线相互并联之后,再通过铰链与卫星结构地连接。
Description
技术领域
本发明涉及航天电源技术领域,特别是涉及一种等电位网络三结砷化镓太阳能电池阵结构及制造方法。
背景技术
近年来,随着社会的快速发展,人类对能源的需求量变的是越来越大,但是由于传统资源(比如煤炭、石油等)的储量有限,因此科学家门需要不断地去探寻新能源,比如目前最为公知的风能、太阳能、潮汐能等等。
众所周知,由于太阳的寿命比较长,因此太阳能被认为是取之不尽,用之不竭的新型能源,目前,三结砷化镓太阳能电池是一种广泛应用于航天领域的电源;近年来,我国的航天事业迅猛发展,为卫星提供能源的三结砷化镓太阳电池阵已经广泛应用于航天领域。而进行全球空间电磁场、电离层等离子体、高能粒子探测以获取空间电磁和电离层信息的卫星也在逐年增加。等离子体和电磁场原位探测的必要条件是卫星对空间探测对象的干扰应该降低到不可观测的程度,也就是说卫星相对于等离子体为“不可见”。这就需要把卫星的电位控制在一定的范围内,通常为±2V,即本专利所涉及到的“等电位”。目前,我国对卫星表面充/放电特性逐步有了较为深刻的认识,但对于在卫星表面占很大比例的太阳电池阵表面的充放电特性,特别是对于有等电位要求的卫星,在电位控制技术方面研究甚少,而在三结砷化镓太阳电池阵上应用等电位网络技术还属于空白阶段。
发明内容
本发明要解决的技术问题是:把等电位网络技术应用在三结砷化镓电池阵上,在充分满足卫星载荷用电需求的同时,达到控制太阳电池阵电位的目的。
本发明为解决公知技术中存在的技术问题所采取的技术方案是:
一种等电位网络三结砷化镓太阳能电池阵结构,包括N个三结砷化镓太阳能电池组件,其中:N为大于2的自然数;其特征在于:
每个三结砷化镓太阳能电池的效率大于28%;在每个三结砷化镓太阳能电池上粘贴有抗辐照玻璃盖片;所述抗辐照玻璃盖片的厚度范围是0.12mm~0.3mm;在每个抗辐照玻璃盖片上蒸镀有MgF2减反射膜,在所述MgF2减反射膜上蒸镀有ITO透明导电膜;所述ITO透明导电膜的厚度不大于15nm;在所述ITO透明导电膜上蒸镀有一对ITO膜金属电极;每对ITO膜金属电极之间的电阻值不大于10kΩ;
每个三结砷化镓太阳能电池组件由M个三结砷化镓太阳能电池组成,其中,M为大于2的自然数;上述M个三结砷化镓太阳能电池的ITO膜金属电极之间通过ITO互连片依次串联;N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线相互并联之后,再通过铰链与卫星结构地连接。
进一步:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物。
所述铟氧化物为In2O3;所述锡氧化物为SnO2。
所述In2O3和SnO2的质量比是9:1。
所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm。
所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。
一种等电位网络三结砷化镓太阳能电池阵结构的制造方法,包括如下步骤:
步骤101、首先在抗辐照玻璃盖片上蒸镀MgF2减反射膜,然后用真空蒸镀的方法在MgF2减反射膜之上蒸镀ITO透明导电膜,在每个蒸镀ITO透明导电膜之上蒸镀一对ITO膜金属电极,在每个ITO膜金属电极上焊接ITO互连片,最后把抗辐照玻璃盖片用硅橡胶粘贴在三结砷化镓太阳电池上;
步骤102、每个三结砷化镓太阳能电池阵包括N个三结砷化镓太阳能电池组件,每个太阳能电池组件包括M个粘贴有ITO抗辐照玻璃盖片的三结砷化镓太阳能电池,三结太阳能电池的正负极以串联的方式焊接在一起;
步骤103、将每个三结砷化镓太阳能电池组件的M个三结砷化镓太阳能电池上的ITO膜金属电极通过ITO互连片焊接在ITO汇流条上,每个三结砷化镓太阳能电池组件的三结砷化镓太阳能电池上的ITO玻璃盖片之间串联成一个导电通路;
步骤104、将N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线并接之后形成一个导电网络,此导电网络通过铰链与卫星结构地连接。
进一步:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物;所述铟氧化物为In2O3;所述锡氧化物为SnO2;所述In2O3和SnO2的质量比是9:1。
进一步:所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm;
进一步:所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。
本发明具有的优点和积极效果是:本发明的等电位网络技术采用了导电性能和光学性能可以高度匹配的ITO导电涂层作为控制电位的应用材料,可以在不影响三结砷化镓太阳电池光谱特性的前提下,兼具良好的导电特性,从而使吸附在太阳电池阵上的空间带电粒子得到泄放,以达到太阳电池阵及卫星等电位的目的。
在整体等电位网络结构上,采用串并联结构,互为备份,减小接地电阻,提高了网络连接的可靠性。串联搭接采用防原子氧的ITO互连片,并联搭接的导线也是能够抵抗恶劣空间环境的抗辐射导线,满足环境应用的要求。
一、抗辐照玻璃盖片:由于在抗辐照玻璃盖片上蒸镀透明导电膜,其主要成分是氧化铟锡,即铟氧化物(In2O3)和锡氧化物(SnO2)的混合物,通常的质量比是9:1。这种膜层的技术特点是:氧化铟锡涂层具有良好的电学特性和光学透明特性,但二者的关系是相悖的,通过增加膜层厚度来提高电学特性,而光学透明特性往往因为膜层厚度的增加而降低,因此,在玻璃盖片上蒸镀ITO膜层的时候,需要使两者达到一个很好的平衡点,当蒸镀透明导电膜的厚度不大于15nm,特别是不大于10nm,既能够保证其良好的导电性,又不影响其对光谱的吸收率
二、在本专利中,等电位网络的连接采用串并联结构,ITO膜金属电极通过ITO互连片串联,串联引出端再焊接到ITO汇流条上,汇流条通过导线并联在一起,减小接地网络电阻,ITO膜电极彼此并联,互相备份,提高了整个等电位网络的可靠性。
三、本专利使用的ITO互连片采用银箔局部银镀金的形式,因此可以防止低轨道原子氧环境对银箔的侵蚀。
四、电池电极汇流条和ITO汇流条采用一体化设计,使太阳电池阵结构更加整体化,生产更便捷。
附图说明:
图1是本发明优选实施例中单一三结砷化镓太阳能电池组件的结构;
图2是本发明优选实施例中单一三结砷化镓太阳能电池的结构;
图3是本发明优选实施例中相邻三结砷化镓太阳能电池之间的连接结构;
图4是本发明两个三结砷化镓太阳能电池组件之间的连接关系;
图5是本发明优选实施例的整体结构图;
图6是本发明优选实施例的局部结构示意图,主要用于显示ITO互连片的结构。
其中:1、三结砷化镓太阳能电池;1-1、ITO膜金属电极;2、ITO汇流条;3、ITO互连片;4、导线;5、铰链;6、锡焊。
具体实施方式
为能进一步了解本发明的发明内容、特点及功效,兹例举以下实施例,并配合附图详细说明如下:
请参阅图1至图5,一种等电位网络三结砷化镓太阳能电池阵结构,包括N个三结砷化镓太阳能电池组件,其中:N为大于2的自然数;在本优选实施例中,每个三结砷化镓太阳能电池1的效率大于28%;在每个三结砷化镓太阳能电池1上粘贴有抗辐照玻璃盖片;所述抗辐照玻璃盖片的厚度范围是0.12mm~0.3mm;在每个抗辐照玻璃盖片上蒸镀有MgF2减反射膜,在所述MgF2减反射膜上蒸镀有ITO透明导电膜;所述ITO透明导电膜的厚度不大于15nm;在所述ITO透明导电膜上蒸镀有一对ITO膜金属电极1-1;每对ITO膜金属电极1-1之间的电阻值不大于10kΩ;每个三结砷化镓太阳能电池组件由M个三结砷化镓太阳能电池组成,其中,M为大于2的自然数;上述M个三结砷化镓太阳能电池的ITO膜金属电极之间通过ITO互连片3依次串联;N个三结砷化镓太阳能电池组件之间通过ITO汇流条2和导线4相互并联之后,再通过铰链5与卫星结构地连接。
本具体实施例是在每片三结砷化镓太阳电池上粘贴抗辐照玻璃盖片,盖片上蒸镀有金属电极,通过电极互连片把盖片串联在一起,串联引出端再分别焊接到ITO汇流条上。整个太阳电池阵的ITO汇流条通过导线并联在一起,形成一个接地并联网络,最终通过铰链与卫星结构地相连,达到泄放空间带电粒子的目的,从而把太阳电池阵乃至卫星的电位控制在要求的范围内
在上述具体实施例的基础上,进一步:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物。更进一步:所述铟氧化物为In2O3;所述锡氧化物为SnO2。更进一步:所述In2O3和SnO2的质量比是9:1。这种膜层的技术特点是:氧化铟锡涂层具有良好的电学特性和光学透明特性,但二者的关系是相悖的,通过增加膜层厚度来提高电学特性,而光学透明特性往往因为膜层厚度的增加而降低,因此,在玻璃盖片上蒸镀ITO膜层的时候,需要使两者达到一个很好的平衡点,一般ITO膜的厚度不大于15nm,特别是不大于10nm,既保证其良好的导电性,又不影响其对光谱的吸收率。
进一步:所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm。
进一步:所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。本发明使用的ITO互连片采用银箔局部银镀金的形式,因此可以防止低轨道原子氧环境对银箔的侵蚀。
请参阅图6,为了达到抵抗低轨道环境恶劣的温度交变而导致的热应变,在银箔中间位置形成减应力弯,提高连接的可靠性。该ITO互连片3的两端为直线结构,在中间位置弯折出一个具有弧度的弯折段,ITO互连片3与ITO膜金属电极1-1之间通过锡焊6固定连接;作为优选,本具体实施例中弯折段的拱高为0.5mm,弯折段的曲率半径为0.3mm。
通过采用上述技术方案,解决了新需求下对电位方面的要求,满足了太阳电池阵的可靠性,该设计后续可用于要求等电位控制的卫星上,并可用于电压达到200V以上的卫星太阳电池阵中,减少卫星在轨运行时表面电位的差异,保证星上仪器的探测精度以及数据采集的准确性,防止太阳电池阵表面静电充/放电的发生,提高太阳电池阵的可靠性,满足太阳电池阵表面洁净度,应用前景可观,具有很大的经济和社会效益。
一种等电位网络三结砷化镓太阳能电池阵结构的制造方法,包括如下步骤:
步骤101、首先在抗辐照玻璃盖片上蒸镀MgF2减反射膜,然后用真空蒸镀的方法在MgF2减反射膜之上蒸镀ITO透明导电膜,在每个蒸镀ITO透明导电膜之上蒸镀一对ITO膜金属电极,在每个ITO膜金属电极上焊接ITO互连片,最后把抗辐照玻璃盖片用硅橡胶粘贴在三结砷化镓太阳电池上;
步骤102、每个三结砷化镓太阳能电池阵包括N个三结砷化镓太阳能电池组件,每个太阳能电池组件包括M个粘贴有ITO抗辐照玻璃盖片的三结砷化镓太阳能电池,三结太阳能电池的正负极以串联的方式焊接在一起;
步骤103、将每个三结砷化镓太阳能电池组件的M个三结砷化镓太阳能电池上的ITO膜金属电极通过ITO互连片焊接在ITO汇流条上,每个三结砷化镓太阳能电池组件的三结砷化镓太阳能电池上的ITO玻璃盖片之间串联成一个导电通路;
步骤104、将N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线并接之后形成一个导电网络,此导电网络通过铰链与卫星结构地连接。
进一步:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物;所述铟氧化物为In2O3;所述锡氧化物为SnO2;所述In2O3和SnO2的质量比是9:1。
进一步:所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm。
进一步:所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。
以上对本发明的实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。
Claims (10)
1.一种等电位网络三结砷化镓太阳能电池阵结构,包括N个三结砷化镓太阳能电池组件,其中:N为大于2的自然数;其特征在于:
每个三结砷化镓太阳能电池的效率大于28%;在每个三结砷化镓太阳能电池上粘贴有抗辐照玻璃盖片;所述抗辐照玻璃盖片的厚度范围是0.12mm~0.3mm;在每个抗辐照玻璃盖片上蒸镀有MgF2减反射膜,在所述MgF2减反射膜上蒸镀有ITO透明导电膜;所述ITO透明导电膜的厚度不大于15nm;在所述ITO透明导电膜上蒸镀有一对ITO膜金属电极;每对ITO膜金属电极之间的电阻值不大于10kΩ;
每个三结砷化镓太阳能电池组件由M个三结砷化镓太阳能电池组成,其中,M为大于2的自然数;上述M个三结砷化镓太阳能电池的ITO膜金属电极之间通过ITO互连片依次串联;N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线相互并联之后,再通过铰链与卫星结构地连接。
2.根据权利要求1所述的等电位网络三结砷化镓太阳能电池阵结构,其特征在于:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物。
3.根据权利要求2所述的等电位网络三结砷化镓太阳能电池阵结构,其特征在于:所述铟氧化物为In2O3;所述锡氧化物为SnO2。
4.根据权利要求2所述的等电位网络三结砷化镓太阳能电池阵结构,其特征在于:所述In2O3和SnO2的质量比是9:1。
5.根据权利要求2所述的等电位网络三结砷化镓太阳能电池阵结构,其特征在于:所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm。
6.根据权利要求2所述的等电位网络三结砷化镓太阳能电池阵结构,其特征在于:所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。
7.一种如权利要求1所述等电位网络三结砷化镓太阳能电池阵结构的制造方法,其特征在于:包括如下步骤:
步骤101、首先在抗辐照玻璃盖片上蒸镀MgF2减反射膜,然后用真空蒸镀的方法在MgF2减反射膜之上蒸镀ITO透明导电膜,在每个蒸镀ITO透明导电膜之上蒸镀一对ITO膜金属电极,在每个ITO膜金属电极上焊接ITO互连片,最后把抗辐照玻璃盖片用硅橡胶粘贴在三结砷化镓太阳电池上;
步骤102、每个三结砷化镓太阳能电池阵包括N个三结砷化镓太阳能电池组件,每个太阳能电池组件包括M个粘贴有ITO抗辐照玻璃盖片的三结砷化镓太阳能电池,三结 太阳能电池的正负极以串联的方式焊接在一起;
步骤103、将每个三结砷化镓太阳能电池组件的M个三结砷化镓太阳能电池上的ITO膜金属电极通过ITO互连片焊接在ITO汇流条上,每个三结砷化镓太阳能电池组件的三结砷化镓太阳能电池上的ITO玻璃盖片之间串联成一个导电通路;
步骤104、将N个三结砷化镓太阳能电池组件之间通过ITO汇流条和导线并接之后形成一个导电网络,此导电网络通过铰链与卫星结构地连接。
8.根据权利要求7所述的制造方法,其特征在于:所述ITO透明导电膜为铟氧化物和锡氧化物的混合物;所述铟氧化物为In2O3;所述锡氧化物为SnO2;所述In2O3和SnO2的质量比是9:1。
9.根据权利要求7所述的制造方法,其特征在于:所述ITO膜金属电极为钛-钯-银结构,每个ITO膜金属电极的厚度为5μm。
10.根据权利要求7所述的制造方法,其特征在于:所述ITO互连片为局部镀金的银箔,所述ITO互连片的厚度为0.03mm。
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