High temperature chemical vapor deposition apparatus and its heating system
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, more particularly to a kind of high temperature chemical vapor deposition apparatus and its
Heating system.
Background technology
It is that the hydride of different gas or element is common with chemical vapor deposition (CVD) equipment growing film material
It is passed through reative cell, series of chemical occurs when flowing through the substrate surface of heating for mixed gas, and is epitaxially grown to compound
Monocrystal thin films.
Reative cell is the most crucial part of entire CVD equipment, determines the performance of whole equipment.And reative cell heating system
It is an important factor for influencing film deposition quality, the thin-film material of some high quality, which needs to grow at high temperature, to be obtained, such as
Aluminium nitride and carborundum films material, the two epitaxial growth temperature is all at 1300 DEG C or more.Due to the heating system of high temperature CVD equipment
System has its particularity, so requiring the heating system design of high temperature CVD equipment more harsh, the especially temperature tolerance of component
Can, unfailing performance will further increase, and almost reach the limit of a variety of materials, the selection and protection to material have higher want
It asks.
Invention content
Technical problem to be solved by the invention is to provide a kind of high temperature chemical vapors for capableing of effective protection heating system
Depositing device and its heating system.
In order to solve the above technical problems, the present invention provides a kind of heating system of high temperature chemical vapor deposition apparatus, packet
Heater is included, and:
Heater support element, one end support of the heater support element are connected to the lower part of the heater;
Ceramic insulator, the ceramic insulator are connect with the other end of the fever support element;The ceramic insulator
Including end and side;
Heat radiation prevention part, the heat radiation prevention part are set between the heater and the ceramic insulator, by
The material for being more than ceramics to the tolerance of high temperature is made;The heat radiation prevention part includes the first protection department and the second protection
Portion;First protection department is set between the heater and the end of the ceramic insulator, and second protection department is set
It sets between the heater and the side of the ceramic insulator.
Further, the first protection department of the heat radiation prevention part is arranged on the end of the ceramic insulator, institute
It states the second protection department and extends scheduled distance along the outer lateral surrounding of first protection department.
Further, the first protection department of the heat radiation prevention part is arranged on the end of the ceramic insulation component,
Second protection department extends downwardly scheduled distance on the outside of the end of the ceramic insulation component.
Further, the first protection department of the heat radiation prevention part is arranged on the end of the ceramic insulation component,
First protection department is provided with protrusion on the face opposite with the ceramic insulator.
Further, the protrusion is formed by cyclic annular or strip metal.
Further, the heating system further includes heat insulating member, and the heat insulating member is arranged in the ceramic insulator
Bottom;The heat insulating member includes one or more layers heat screen, and the upper surface of the heat screen of the heat insulating member top layer is
Minute surface.
Further, the heater includes the first heat generating component and the second heat generating component of separation, first fever
Component and the second heat generating component are spaced apart scheduled spacing, and separator is provided between adjacent heat generating component.
Further, the separator includes isolation ceramics and the ceramic heat shield of isolation;The isolation ceramics heat is anti-
Guard includes opposite with first heat generating component the first isolation ceramic thermal protection portion, and with the second heat generating component phase
To the ceramic thermal protection portion of the second isolation;First isolation ceramics thermal protection portion and the second isolation ceramic thermal protection portion divide each other
It opens.
Further, first heat generating component and the second heat generating component include sheet or spring filiform heat generating component.
Further, the heater support element includes the arm that support portion and the support portion are downwardly extending, institute
The support of support portion and the heater is stated to connect, the arm stretch into the accommodating blind via bottom on the ceramic insulator and with institute
State accommodating blind hole clearance fit.
Further, the heat radiation prevention part on the ceramic insulator is provided with leads to for what the arm passed through
Hole, the through-hole cover the accommodating blind hole on the ceramic insulator.
The present invention also provides a kind of high temperature chemical vapor deposition apparatus, the equipment includes heated object;And it is above-mentioned
Heating system for high temperature chemical vapor deposition apparatus.
High temperature chemical vapor deposition apparatus provided by the invention and its heating system, have the following advantages:
1) connection is supported to heater by heater support element, can prevents heater in high-temperature heating process
Generation deformation causes the offset of heating location and influences the uniformity of heating temperature.
2) ceramic insulator is protected using heat radiation prevention part, point of ceramic insulator at high temperature can be prevented
Solution evaporation, and then the quality of evaporated material influence epitaxial layer can be prevented.
3) use heat insulating member that can prevent the loss of heat in heating system, to improve the efficiency of the heating system.
Description of the drawings
Fig. 1 is the front view for the heating system for high temperature chemical vapor deposition apparatus that the embodiment of the present invention 1 provides.
Fig. 2 is the side view for the heating system for high temperature chemical vapor deposition apparatus that the embodiment of the present invention 1 provides.
Fig. 3 is the front view for the heating system for high temperature chemical vapor deposition apparatus that the embodiment of the present invention 2 provides.
Fig. 4 is the front view for the heating system for high temperature chemical vapor deposition apparatus that the embodiment of the present invention 3 provides.
Fig. 5 is the front view for the heating system for high temperature chemical vapor deposition apparatus that the embodiment of the present invention 4 provides.
Specific implementation mode
Embodiment 1
Referring to Fig. 1, a kind of heating system for high temperature chemical vapor deposition apparatus provided in an embodiment of the present invention, packet
It includes:Heater 01 for being heated to heated object 06, one end support are connected to the heater branch of the lower part of heater 01
Support member 05, the ceramic insulator 03 being connect with the other end of fever supporter part 05, is set to calandria 01 and ceramic insulator
Heat radiation prevention component 02 between 03, and the heat insulating member 04 in 03 bottom of ceramic insulation component is set.
Wherein, heater 01 passes through powder metallurgy, rolling, milling, wire cutting etc. one using tungsten, rhenium or other raw metals
The sheet or spring filament that series of processes is prepared, heater 01 not only has good conductive capability, but also has
There is superpower high temperature resistance, heating temperature can reach 2000 DEG C even 2000 DEG C or more from room temperature, to upper part
Heated object 06 heats.And it is the substrate pallet for placing various substrates that the heated object 06 on 01 top of calandria, which is arranged,
Such as heated object 06 can be the substrate pallet for being epitaxially grown to compound monocrystal film.
Since the heater 01 that heater support element 05 and temperature are up to 2000 DEG C even 2000 DEG C or more connect, hair
Hot body support element 05 material selection it is upper should using tungsten, molybdenum or other be resistant to the metal of 2000 DEG C or more high temperature, or adopt
With other conductive materials for being resistant to 2000 DEG C or more high temperature.Heater support element 05 is made by the silk or item of above-mentioned material
Made of support element, including support portion 051 and multiple arms 052 for extending downwardly and being formed along 051 edge of support portion.Support portion
051 connect with 01 bottom of calandria, and heater 01, support portion 051 is supported to be set according to the width and length of calandria 01 from below
Fixed width degree, length and quantity, to ensure that support portion 051 can steadily support heater 01.The lower part of arm 052 and ceramics are exhausted
The end of edge part 03 connects, and 03 end set of ceramic insulator has accommodating blind hole corresponding with 052 position of arm and equal number
031, each arm 052 is extended downwardly from support portion 051, is stretched into accommodating blind hole 031, arm 052 and 031 gap of accommodating blind hole
Cooperation, and at least there are two the bottoms of accommodating blind hole 031 to be contacted with the bottom end of arm 052, to increase arm 052 accommodating blind
The stability in hole 031, to make entire heater support element 05 and ceramic insulator 03 be stably connected with, to keep heater 01 logical
It crosses heater support element 05 to be bonded with ceramic insulator 03, be supported with to ensure heater support element 05 to heater 01 steady
It is qualitative, it prevents calandria 01 from generating deformation during heating and causes the offset of heating location and influence heating effect.Certainly,
As other specific implementation modes of the present embodiment, firm support knot that heater support element 05 can also take other form
Structure, such as heater support element 05 can also use multiple support constructions similar to " bifurcation " shape, and " bifurcation " shape support construction include
Branch portion and the cadre extended downwardly from branch portion, branch portion are used for supporting heater 01, cadre to be arranged in 03 end of ceramic insulator
It is used to support a portion, to realize support of " bifurcation " the shape structure to heater 01.
Due to ceramic insulator 03 use ceramic material have good insulation performance, ceramic insulator 03 with
The cooperation of heater support element 05 can not only be played the role of stablizing support heater 01, and be also prevented from 01 He of heater
Heater support element 05 leaks electricity, to avoid influencing the heating effect of heating system because of electric leakage.
Since the ceramic material that ceramic insulator 03 uses is not resistant to 1600 DEG C or more of high temperature, and the hair of heater 01
Hot temperature can be up to 2000 DEG C or more, and the heat of 01 hyperthermia radiation of heater be easy to cause the high temperature corrode of ceramic insulator 03
And make the ceramic composition decomposition evaporation of ceramic insulator 03, to cause evaporated material to influence the growth quality of epitaxial layer.Therefore,
High temperature corrode phenomenon occurs for ceramic insulator 03 in order to prevent, therefore heat radiation is arranged between calandria 01 and ceramic insulator 03
Protector 02, heat radiation prevention part 02 include the first protection department 021 and the second protection department 022;First protection department 021 is set to hair
Between hot body 01 and the end of ceramic insulator 03, the second protection department 022 is arranged in the side of heater 01 and ceramic insulator 03
Between portion.It is located at the arm 052 being provided at the position of accommodating blind hole 031 for heater support element 05 on first protection department 021
The through-hole passed through, and through-hole covers the accommodating blind hole 031 on ceramic insulator 03 just.Work as high temperature chemical vapor deposition apparatus
Heating system work when, operating temperature be up to 2000 DEG C or more heater 01 radiate heat be radiated ceramic insulator 03
On, due to the protective action of the second protection department 022 of the first protection department 021 and side of 03 end of ceramic insulator, can avoid
The temperature of ceramic insulator 03 is increased to 1600 DEG C of its tolerable temperature, high temperature corrode occurs to can avoid ceramic insulator 03
And make its ceramic composition decomposition evaporation, to can avoid the growth quality for causing evaporated material to influence epitaxial layer.
To reduce the heat loss of heating system, the lower part suitable position of heater 01 is provided with heat insulating member 04, makes pottery
The bottom of porcelain insulating component 03 is arranged on heat insulating member 04, and heat insulating member 04 is one or more layers heat screen, heat screen 04 by
The high temperature resistant and good leaf of heat insulation, molybdenum sheet or other metal materials are made, and difference may be used in each layer of heat screen 04
The upper surface of the metal of type, top layer's heat screen 04 is designed to that minute surface, minute surface can be preferably anti-the heat of heater 01
It penetrates up, so as to more effectively reduce the thermal loss of heating system, improves the efficiency of heating surface of heating system.
Referring to Fig. 2, heater 01 includes the first heat generating component 011 and the second heat generating component 012 of separation, the first fever group
Certain spacing spaced apart of part 011 and the second heat generating component 012, to prevent the first heat generating component 011 and the second heat generating component
Conducting is contacted between 012, and separator is provided between the first heat generating component 011 and the second heat generating component 012.Separator includes
Isolation ceramics 08 and isolation ceramics heat shield 09;Wherein, the bottom of ceramics isolation 08 is arranged on heat screen 04, isolation pottery
Porcelain heat shield 09 include opposite with the first heat generating component 011 first be isolated ceramic thermal protection portion 091, and with the second fever
Opposite the second isolation ceramic thermal protection portion 092 of component 012;First isolation ceramic thermal protection portion 091 and the second isolation ceramics heat
Protection department 092 is separated from each other.Setting the first isolation ceramic thermal protection portion 091 and the ceramic thermal protection of the second isolation in ceramics isolation 08
Portion 092 can prevent the heat that the first heat generating component 011 and the second heat generating component 012 radiate from causing ceramics 08 high temperature melting of isolation
It loses and ceramic composition decomposition evaporation occurs, to cause evaporated material to influence the growth quality of epitaxial layer.
High temperature chemical vapor deposition apparatus provided in an embodiment of the present invention includes heater 01 and heated object 06, Yi Jishang
Heating system is stated, it is various including GaN, GaAs, InGaN, AlN, AlGaN, AlInGaN, SiC to can be used for epitaxial growth
The semi-conducting material of III-V race and II-VI compounds or the heat treatment to material.High temeperature chemistry gas provided in an embodiment of the present invention
Phase depositing device effectively heats the various substrates on heated object 06 by heater 01, can not only effectively prevent adding
Heat loss in hot systems can also effectively prevent evaporating the growth quality of harmful substance influence epitaxial layer in heating system.
Embodiment 2
Referring to Fig. 3, a kind of heating system for high temperature chemical vapor deposition apparatus provided in an embodiment of the present invention, with reality
The difference for applying the heating system of the offer of example 1 is:The first of the heat radiation prevention part 02 of heating system provided in this embodiment is anti-
Shield portion 021 is arranged on the end of ceramic insulator 03, and the second protection department 022 is along the outer lateral week of the first protection department 021
It encloses and extends scheduled distance, make there is smaller spacing between two second adjacent protection departments 022, enable heat radiation prevention part 02
It is enough fully to cover in ceramic insulator 03, to which the heat for effectivelying prevent high temperature exothermic body 01 to radiate is radiated ceramic insulator 03
On, the temperature that can avoid ceramic insulator 03 is increased to its tolerable temperature and high temperature corrode occurs, and makes its ceramic composition point
Solution evaporation, to cause evaporated material to influence the growth quality of epitaxial layer.Also, the bottom of ceramic insulation component 03 passes through multilayer
One layer of heat screen 04 in heat screen 04 plays the role of stablizing support heater 01 with the cooperation of support member 05.
Embodiment 3
Referring to Fig. 4, a kind of heating system for high temperature chemical vapor deposition apparatus provided in an embodiment of the present invention, with reality
The difference for applying the heating system of the offer of example 1 is:The first of the heat radiation prevention part 02 of heating system provided in this embodiment is anti-
Shield portion 021 is arranged on the end of ceramic insulator 03, it is preferable that can be by way of being deposited or sputtering by the high temperature resistant
Metal is attached to the end of the ceramic insulation component.And the second protection department 022 is attached to the upper portion side wall of ceramic insulation component
Outside, extend downwardly scheduled distance along the side of ceramic insulator 03;The adhering mode is equally that can pass through steaming
The refractory metal is attached on the ceramic insulation component by the mode of plating or sputtering.To make the big of ceramic insulator 03
Part surface is covered by the first protection department 021 of heat radiation prevention part 02 and the second protection department 022, can also reduce high temperature exothermic
Heat radiation of the body 01 to ceramic insulation component 03, avoid the temperature of ceramic insulation component 03 more than its tolerable temperature decomposition evaporation
And influence the epitaxial quality of chemical vapor depsotition equipment.
Embodiment 4
Referring to Fig. 5, a kind of heating system for high temperature chemical vapor deposition apparatus provided in an embodiment of the present invention, with reality
The difference for applying the heating system of the offer of example 1 is:The first of the heat radiation prevention part 02 of heating system provided in this embodiment is anti-
Shield portion 021 is arranged on the end of ceramic insulator 03, and the second protection department 022 is along the outer lateral week of the first protection department 021
It encloses and extends scheduled distance, make there is smaller spacing between two second adjacent protection departments 022, to make heat radiation prevention part
02 can fully cover in ceramic insulator 03.Also, it is arranged on the first protection department 021 face opposite with ceramic insulator 03
There are protrusion 07, protrusion 07 to be formed by cyclic annular or strip metal.This protrusion 07 can be with the first protection of heat radiation prevention part 02
Portion 021 welds together, can also with bulk metallic materials by protrusion 07 and heat radiation prevention part 02 021 He of the first protection department
Second protection department 022 processes together.In the lower surface of the first protection department 021 of heat radiation prevention part 02, protrusion 07 is set,
The contact area of the first protection department 021 and ceramic insulator 03 can be reduced, and then reduces the conduction of radiant heat, so as to drop
The temperature of low ceramic insulation component 03.Certainly, according to design identical with the present embodiment, first in embodiment 1 and embodiment 3
Protrusion 07 can be set on the lower surface of protection department 021, to reduce the first protection department 021 and ceramics of heat radiation prevention part 02
The contact area of insulating part 03, and then the conduction of radiant heat is reduced, so as to reduce the temperature of ceramic insulator 03.
Heating system provided in an embodiment of the present invention for high temperature chemical vapor deposition apparatus, can play support, absolutely
Edge, radiation protection and the effect for keeping temperature, heat radiation prevention part is arranged especially on ceramic insulator, can prevent from heating
High temperature exothermic body in system prevents ceramics from evaporating at high temperature, avoids because of ceramics to the high temperature corrosion of ceramic insulator
Influence of Evaporation chemical vapor depsotition equipment epitaxial quality, to the effective intact using playing of high temperature chemical vapor deposition apparatus
Protective action.
It should be noted last that the above specific implementation mode is merely illustrative of the technical solution of the present invention and unrestricted,
Although being described the invention in detail with reference to example, it will be understood by those of ordinary skill in the art that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit of the technical scheme of the invention and range, should all cover
In the scope of the claims of the present invention.