CN104952952A - Concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system - Google Patents
Concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system Download PDFInfo
- Publication number
- CN104952952A CN104952952A CN201510300434.8A CN201510300434A CN104952952A CN 104952952 A CN104952952 A CN 104952952A CN 201510300434 A CN201510300434 A CN 201510300434A CN 104952952 A CN104952952 A CN 104952952A
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- China
- Prior art keywords
- thin
- film
- transparent
- crystalline silicon
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000010248 power generation Methods 0.000 title abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- 239000012528 membrane Substances 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000013083 solar photovoltaic technology Methods 0.000 abstract description 3
- 238000001228 spectrum Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 10
- 230000005693 optoelectronics Effects 0.000 description 6
- 230000005619 thermoelectricity Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention relates to a concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system. The concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system comprises a Fresnel lens, a non-crystalline silicon transparent-thin-film solar cell and a three-five transparent-thin-film solar cell, wherein the non-crystalline silicon transparent-thin-film solar cell and the three-five transparent-thin-film solar cell are separated into an upper part and a lower part which are connected together and connected with an inverter, the non-crystalline silicon transparent-thin-film solar cell in the upper part is used for achieving photovoltaic conversion for energy in a high-frequency solar spectrum area, and the three-five transparent-thin-film solar cell is used for achieving thermoelectric conversion for energy in a low-frequency solar spectrum area. The concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system has the advantages that by means of adopting transparent films, a photovoltaic conversion technology and a thermoelectric conversion technology, the energy in full solar spectrum bands is utilized effectively, and solar energy conversion efficiency is improved greatly as compared with that of a solar photovoltaic technology.
Description
Technical field
The present invention relates to a kind of solar power system, especially a kind of light-focusing type amorphous silicon transparent thin-film battery and three or five race's hull cell electricity generation systems.
Background technology
The development of modern science and technology is to the demand of new forms of energy and apply more and more extensive, and therefore, increasing solar product is applied in the middle of social production life.
The electro-optical system that solar energy system is in the market mainly simple, generating efficiency is low, low to the utilization ratio of sunlight, is not suitable with progress and the development of modern science and technology.
Summary of the invention
In order to overcome the deficiency of technique scheme, the object of this invention is to provide a kind of transparent membrane solar cell and polycrystalline silicon integrated power generation system.
The present invention is achieved through the following technical solutions:
A kind of light-focusing type amorphous silicon transparent thin-film battery and three or five race's hull cell electricity generation systems, comprise Fresnel Lenses, amorphous silicon transparent membrane solar cell, three or five race's transparent membrane solar cells.
Amorphous silicon transparent membrane solar cell and three or five race's transparent membrane solar cells are divided into upper and lower two parts to be connected in parallel, two parts connect inverter respectively, upper part amorphous silicon transparent membrane solar cell realizes the opto-electronic conversion to solar spectral high frequency region energy, and lower part three or five race transparent membrane solar cell realizes changing the thermoelectricity of solar spectral low frequency range energy.
Summarize, this patent comprises following a few major part:
1, amorphous silicon transparent membrane solar cell, realizes the opto-electronic conversion to solar spectral high frequency region energy;
2, three or five race's transparent membrane solar cells, realize changing the thermoelectricity of solar spectral low frequency range energy;
3, Fresnel Lenses, realizes the gathering of sunlight.
This patent have employed transparent membrane, opto-electronic conversion and thermoelectricity and changes coupling technique, effectively make use of the full spectral coverage energy of the sun, compared with existing solar-photovoltaic technology, substantially increases the conversion efficiency of solar energy.
Accompanying drawing explanation
Below with reference to the accompanying drawings and embodiment this patent is described further:
Fig. 1 is this patent overall structure cutaway view
In figure: 1, Fresnel Lenses; 2, amorphous silicon transparent membrane solar cell; 3, three or five race's transparent membrane solar cells.
Embodiment
As shown in Figure 1, a kind of light-focusing type amorphous silicon transparent thin-film battery and three or five race's hull cell electricity generation systems, comprise Fresnel Lenses 1, amorphous silicon transparent membrane solar cell 2,35 race transparent membrane solar cell 3, inverter 4.
Amorphous silicon transparent membrane solar cell and three or five race's transparent membrane solar cells are divided into upper and lower two parts to be connected in parallel, two parts connect inverter respectively, upper part amorphous silicon transparent membrane solar cell realizes the opto-electronic conversion to solar spectral high frequency region energy, and lower part three or five race transparent membrane solar cell realizes changing the thermoelectricity of solar spectral low frequency range energy.
Summarize, this patent comprises following a few major part:
1, amorphous silicon transparent membrane solar cell, realizes the opto-electronic conversion to solar spectral high frequency region energy;
2, three or five race's transparent membrane solar cells, realize changing the thermoelectricity of solar spectral low frequency range energy;
3, Fresnel Lenses, realizes the gathering of sunlight.
This patent have employed transparent membrane, opto-electronic conversion and thermoelectricity and changes coupling technique, effectively make use of the full spectral coverage energy of the sun, compared with existing solar-photovoltaic technology, substantially increases the conversion efficiency of solar energy.
Person skilled in the art should be familiar with, the above embodiment is only used to object of the present invention is described, and be not used as limitation of the invention, as long as in essential scope of the present invention, the change done above-described embodiment, modification all will drop in right of the present invention.
Claims (3)
1. light-focusing type amorphous silicon transparent thin-film battery and three or five race's hull cell electricity generation systems, is characterized in that, comprises Fresnel Lenses, amorphous silicon transparent membrane solar cell, three or five race's transparent membrane solar cells.
2. a kind of light-focusing type amorphous silicon transparent thin-film battery according to claim 1 and three or five race's hull cell electricity generation systems, is characterized in that, amorphous silicon transparent thin-film battery and three or five race's hull cells are divided into the upper and lower two parts of upper and lower two parts to be connected in parallel.
3. a kind of light-focusing type amorphous silicon transparent thin-film battery according to claim 1 and three or five race's hull cell electricity generation systems, is characterized in that, realize the gathering of sunlight with Fresnel Lenses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510300434.8A CN104952952A (en) | 2015-06-02 | 2015-06-02 | Concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510300434.8A CN104952952A (en) | 2015-06-02 | 2015-06-02 | Concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104952952A true CN104952952A (en) | 2015-09-30 |
Family
ID=54167484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510300434.8A Pending CN104952952A (en) | 2015-06-02 | 2015-06-02 | Concentration type non-crystalline silicon transparent-thin-film cell and three-five thin-film cell power generation system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104952952A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201495699U (en) * | 2010-01-12 | 2010-06-02 | 林啸 | Sunlight board spotlight solar energy cell device |
| CN101894875A (en) * | 2010-03-22 | 2010-11-24 | 施昊 | High-efficiency concentrating solar photoelectric converter |
| CN102593203A (en) * | 2011-01-14 | 2012-07-18 | 张一熙 | Concentrating-type noncrystalline silicon transparent thin-film battery and III-V thin-film battery power generation system |
-
2015
- 2015-06-02 CN CN201510300434.8A patent/CN104952952A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201495699U (en) * | 2010-01-12 | 2010-06-02 | 林啸 | Sunlight board spotlight solar energy cell device |
| CN101894875A (en) * | 2010-03-22 | 2010-11-24 | 施昊 | High-efficiency concentrating solar photoelectric converter |
| CN102593203A (en) * | 2011-01-14 | 2012-07-18 | 张一熙 | Concentrating-type noncrystalline silicon transparent thin-film battery and III-V thin-film battery power generation system |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150930 |
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| RJ01 | Rejection of invention patent application after publication |