CN104952889B

CN104952889B - Bidirectional light controlled thyristor chip, light-triggered coupler and solid-state relay

Info

Publication number: CN104952889B
Application number: CN201510130205.6A
Authority: CN
Inventors: 鞠山满; 松本浩司; 泽井敬; 泽井敬一; 铃木成次; 条尚生; 一条尚生
Original assignee: Sharp Corp
Current assignee: Sharp Corp
Priority date: 2014-03-24
Filing date: 2015-03-24
Publication date: 2017-10-10
Anticipated expiration: 2035-03-24
Also published as: CN104952889A; JP5870140B2; JP2015185642A

Abstract

The present invention provides the PNPN elements with transversary and can realize the bidirectional light controlled thyristor chip of high current, flip-over type coupler and solid-state relay.In bidirectional light controlled thyristor chip, the first photo thyristor portion (42a) and the second photo thyristor portion (42b) on the surface of 1 semiconductor chip have PNPN portions, and the PNPN portions include：In the anode diffusion region (43) of a direction extension；Substrate；Control pole diffusion zone (44)；With the cathode diffusion region domain (45) formed in control pole diffusion zone (44), the flat shape of at least any one side in the side (45a) relative with anode diffusion region (43) of the mutual two relative sides and cathode diffusion region domain (45) of anode diffusion region (43) and control pole diffusion zone (44), is formed as the shape for relaxing the concentration of the electric current to the central portion in a direction that are supplied from anode diffusion region (43) to control pole diffusion zone (44) and cathode diffusion region domain (45).

Description

Bidirectional light controlled thyristor chip, light-triggered coupler and solid-state relay

Technical field

The present invention relates to bidirectional light controlled thyristor chip (bi-directional photothyristor chip), use The flip-over type coupler of above-mentioned bidirectional light controlled thyristor chip, solid-state relay (the following letter using above-mentioned flip-over type coupler Referred to as SSR).

Background technology

All the time, as the SSR used under exchange, there is the SSR with circuit structure as shown in figure 15.The SSR 8 include：The light-triggered coupler 3 of bidirectional light controlled thyristor 2 including the light-emitting components 1 such as LED (light emitting diode) and triggering； For the actual bidirectional thyristor (following, also to there is the situation of referred to as main thyristor) 4 for controlling to load；With including resistor 5 and electricity Hold the buffer circuit (snubber circuit) 7 of 6 grades.

In addition, the equivalent circuit diagram for constituting above-mentioned SSR 8 light-triggered coupler 3 is as shown in figure 16.Bidirectional light controlled brilliant lock Pipe 2 includes CH (raceway groove (channel)) 1 photo thyristor 9 and CH2 photo thyristor 10.The CH1 structure of photo thyristor 9 As PNP transistor Q1 base stage is connected with NPN transistor Q2 colelctor electrode, on the other hand, by PNP transistor Q1 current collection Pole is connected with NPN transistor Q2 base stage.Equally, CH2 photo thyristor 10 be configured to by PNP transistor Q3 base stage with NPN transistor Q4 colelctor electrode connection, on the other hand, PNP transistor Q3 colelctor electrode and NPN transistor Q4 base stage are connected Connect.

In addition, in above-mentioned CH1 sides, PNP transistor Q1 emitter stage is directly connected with electrode T1.On the other hand, NPN crystal Pipe Q2 emitter stage is directly connected with electrode T2, and NPN transistor Q2 base stage is connected via control electrode resistance 11 with electrode T2.Together Sample, in CH2 sides, PNP transistor Q3 emitter stage is directly connected with electrode T2.On the other hand, NPN transistor Q4 emitter stage is straight Connect and be connected with electrode T1, NPN transistor Q4 base stage is connected via control electrode resistance 12 with electrode T1.

Light-triggered coupler 3 with said structure works as described below.I.e., in figure 16, in electrode T1- electrodes T2 Between be applied with conditions of the biasing of the supply voltage of the voltage higher than the conducting voltage (about 1.5V) of element, first, in electrode In the case that T1 sides are in positive potential compared with electrode T2 sides, when bidirectional light controlled thyristor 2 receives the optical signal from LED 1 When, the NPN transistor Q2 of CH1 sides turns into conducting state.So, the PNP transistor Q1 of CH1 sides base current is brought out, should PNP transistor Q1 is turned on.Then, by PNP transistor Q1 collector current, base stage electricity is supplied to the NPN transistor Q2 of CH1 sides Stream, by positive feedback, the PNPN portions of CH1 sides are turned on, and flow through that the load with alternating current circuit is corresponding to be led from electrode T1 to electrode T2 Galvanization.In this case, in CH2 sides, it is in opposite direction that bias applies, and therefore, the positive feedback in PNPN portions does not occur, flows only through Primary photoelectric current.

On the other hand, in the case of being in positive potential compared with electrode T1 sides in above-mentioned electrode T2 sides, the PNPN portions of CH2 sides With above-mentioned situation completely in the same manner as carry out positive feedback action and turn on, flow only through primary photoelectric current in CH1 sides.

So, when the PNPN portions of above-mentioned CH1 sides or the PNPN portions of CH2 sides carry out turn-on action, the electric current flows into oikocryst The control pole (gate) of brake tube 4, turns on main thyristor 4.

There is the bidirectional light controlled thyristor 2 of above-mentioned light triggering as described above and as actual pair for controlling to load To the SSR 8 of the mixed structure of the main thyristor 4 of IGCT, with the feature that can increase current capacity.Its reason be because For, the chip structure of vertical-type is employed, therefore, the area of current path and PNPN elements proportionally increases, therefore, it is possible to Reduce chip size.I.e., it is possible to say be efficiency high relative to cost structure.

And the disadvantage is that, (1) is in order to obtain the chip structure of vertical-type, it is necessary to use isolation or mesa structure, manufacture is tired It is difficult.(2) because above-mentioned (1) is process costs are high.(3) main thyristor 4 can not use up triggering (because as main thyristor 4 Trigger current needs about 10mA, excites the carrier current of generation significantly not enough by light).

In recent years, the economic environment residing for electronics industry is increasingly serious, and the cost of electronic equipment is consumingly expected all the more Cut down the raising with portability.In order to tackle such requirement, attempt in the conventional SSR with structure as shown in figure 15 In, such as in order to cut down number of components, omit main thyristor 4 to make the SSR of circuit structure as shown in figure 14, merely with upper The bidirectional light controlled thyristor for stating light triggering directly to control load.

The SSR for the circuit structure for eliminating main thyristor as can so make simultaneously can directly control the upper of load The bidirectional light controlled thyristor of light triggering is stated, there is the bi-directional light disclosed in No. 4065825 publications (patent document 1) of Japanese Patent Publication No. Control thyristor chip.

Figure 17 represents the outline pattern layout of the bidirectional light controlled thyristor chip disclosed in above-mentioned patent document 1.In addition, figure 18 and Figure 19 is Figure 17 section skeleton diagram seen of the B-B ' directions of arrow.Wherein, Figure 18 represents state when light guide is logical, Tu19Biao The state during voltage reversal being shown as when light is turned off (during commutation (commutation)).

In above-mentioned conventional bidirectional light controlled thyristor chip, when overlooking, as shown in figure 17, with relative to center line A-A ' and the line segment B-B ' orthogonal with the center line intersection point 180 degree are rotationally symmetrical, i.e. the figure relative to above-mentioned intersection point point symmetry Case.In addition, from section, as shown in Figure 18 and Figure 19, being configured to relative to the vertical direction orthogonal with center line A-A ' Line segment C-C ' is symmetrical.Hereinafter, the photo thyristor that left side is located at relative to center line A-A ' and line segment C-C ' is referred to as CH1 Photo thyristor 20a, by relative to center line A-A ' and line segment C-C ' be located at right side photo thyristor be referred to as the light-operated of CH2 IGCT 20b.

In Figure 17, Figure 18 and Figure 19,21 be N-type silicon substrate, and 22 be by high concentration N-type diffusion zone 22a and high concentration P The short diode (raceway groove separated region) that type diffusion zone 22b is constituted, 23 be anode diffusion region (p-type), and 24 be that control pole expands Dissipate region (p-type), 25 be cathode diffusion region domain (N-type), and 26 be control pole resistance region, and 27 be to be used as raceway groove cut through The high concentration N-type diffusion zone of (channel stopper), 23a, 24a, 27a are Al electrodes.In addition, T1, T2 are lead frame, 28a, 28b, 28a ', 28b ' be Au lines, 29 be Schottky-barrier diode.

According to said structure, it can make significantly to carry as the commutation characteristic of the important design parameter of bidirectional light controlled thyristor It is high.Therefore, by the way that this bidirectional light controlled thyristor as SSR light-triggered coupler are used, main thyristor can be omitted.

Here, above-mentioned " commutation characteristic " is the maximum working current value for representing not cause commutation failure and can control Icom characteristic.In bidirectional light controlled thyristor chip disclosed in above-mentioned patent document 1, in the face side of N-type silicon substrate 21 With short diode 22.Therefore, as shown in figure 19, in commutation, the minority carrier 30 in N-type silicon substrate 21 is by short diode 22 reclaim.As a result, making CH2 photo thyristor 20b turn on such misoperation by the positive feedback effect of above-mentioned CH2 sides (commutation failure) is suppressed, and commutation characteristic is improved.

As described above, the bidirectional light controlled thyristor chip disclosed in above-mentioned patent document 1, be by light trigger for the purpose of it is double To photo thyristor, also made for the purpose for the actual driving element for controlling load, with being suitable for these purposes Transversary.Consequently, because being planar structure, so easily making, have the advantages that process costs are cheap.

But, there is following such ask in the bidirectional light controlled thyristor chip disclosed in above-mentioned conventional patent document 1 Topic.

That is, in the case of the PNPN elements of transversary as above-mentioned bidirectional light controlled thyristor chip, current path Dependent on positioned at mutually relative anode diffusion region (p-type) 23 and control pole diffusion zone (p-type) 24 and cathode diffusion region domain The photo thyristor of CH1 in the complex (be designated as below " the cathode diffusion region domain 25 " of control pole diffusion zone 24/) of (N-type) 25 The side in 20a or CH2 photo thyristor 20b region and its width (depth), accordingly, there exist relative to chip size (∝ Cost) current efficiency it is poor the problem of.

Therefore, it is necessary to realize high current in the bidirectional light controlled thyristor disclosed in above-mentioned patent document 1.

In order to realize above-mentioned high current, if increasing the chip size of above-mentioned bidirectional light controlled thyristor, so that electric current The distance (width in anode diffusion region 23, control pole diffusion zone 24 and cathode diffusion region domain 25) in the face of inflow is elongated with regard to energy Enough accomplish.But, chip cost can be caused to increase.

Prior art literature

Patent document

Patent document 1：No. 4065825 publications of Japanese Patent Publication No.

The content of the invention

The invention technical problem to be solved

Therefore, the technical problem to be solved in the present invention is to provide the PNPN elements with transversary and can realized The bidirectional light controlled thyristor chip of high current, the flip-over type coupler using above-mentioned bidirectional light controlled thyristor chip, using upper State the SSR of flip-over type coupler.

Means for solving technical problem

In order to solve the above-mentioned technical problem, bidirectional light controlled thyristor chip of the invention is characterised by：

Possesses the first photo thyristor portion formed separated from each other on the surface of 1 semiconductor chip and second light-operated IGCT portion,

Above-mentioned each photo thyristor portion has PNPN portions, and the PNPN portions include：Extend in direction and with N-type and A kind of anode diffusion region of conduction type in p-type；Substrate with another conduction type in N-type and p-type；With it is above-mentioned The relative control pole diffusion zone with a kind of above-mentioned conduction type in anode diffusion region；With in the control pole diffusion zone Relatively formed with above-mentioned anode diffusion region and the cathode diffusion region domain with above-mentioned another conduction type,

Above-mentioned anode diffusion region and mutual two relative sides of above-mentioned control pole diffusion zone and above-mentioned negative electrode The flat shape of at least any one side in the side relative with above-mentioned anode diffusion region of diffusion zone, be formed as making from The electric current of control pole diffusion zone and the supply of above-mentioned cathode diffusion region domain is stated upwards to as above-mentioned sun in above-mentioned anode diffusion region The shape that the concentration of the central portion in the said one direction of the bearing of trend of pole diffusion zone relaxes.

In addition, the SSR of the present invention is characterised by：

Including light-triggered coupler and buffer circuit,

Above-mentioned light-triggered coupler includes the bidirectional light controlled thyristor chip and LED of the invention described above.

Invention effect

Understand according to the above, bidirectional light controlled thyristor chip of the invention can be relaxed from above-mentioned anode diffusion region Central portion of the current convergence that domain is supplied to above-mentioned control pole diffusion zone and above-mentioned cathode diffusion region domain to said one direction Situation.That is, when the flowing work between above-mentioned anode diffusion region and above-mentioned control pole diffusion zone/above-mentioned cathode diffusion region domain In the case of surge current for dash current, current convergence can be relaxed to the situation of the central portion in said one direction.

According to the invention it is thus possible to prevent above-mentioned control pole diffusion zone/above-mentioned cathode diffusion region domain knot destroy from And improve that dash current surge is pressure-resistant, the height of the bidirectional light controlled thyristor chip of the PNPN elements with transversary can be realized Electric currentization is so as to improve current efficiency.

In addition, the SSR of the present invention is used even in order to which optical signal of the basis from LED directly controls to load and uses In the case of the bidirectional light controlled thyristor chip of PNPN elements with transversary, the light triggering of current efficiency can be also improved Coupler.Therefore, it is possible to omit the main thyristor for controlling load, the few cheap and high-performance of number of components can be realized SSR.

Brief description of the drawings

Fig. 1 is the figure for the outline pattern layout for representing the bidirectional light controlled thyristor chip of the present invention.

Fig. 2 is Fig. 1 sectional view seen of the D-D ' directions of arrow.

Fig. 3 is the sectional view seen of the D-D ' directions of arrow for the Fig. 1 for representing state when light guide is logical.

The sectional view that Fig. 1 of state when Fig. 4 is commutation when the being denoted as light shut-off D-D ' directions of arrow are seen.

Fig. 5 is the pattern skeleton diagram in anode diffusion region, control pole diffusion zone and cathode diffusion region domain.

Fig. 6 is the figure of the relation for the surge tolerance and chip area for representing dash current.

Fig. 7 is the pattern skeleton diagrams different from Fig. 5.

Fig. 8 is the pattern skeleton diagrams different with Fig. 7 from Fig. 5.

Fig. 9 is the pattern skeleton diagrams different from Fig. 5, Fig. 7 and Fig. 8.

Figure 10 is the pattern skeleton diagrams different from Fig. 5, Fig. 7~Fig. 9.

Figure 11 is the pattern skeleton diagrams different from Fig. 5, Fig. 7~Figure 10.

Figure 12 is the pattern skeleton diagrams different from Fig. 5, Fig. 7~Figure 11.

Figure 13 is the pattern skeleton diagrams different from Fig. 5, Fig. 7~Figure 12.

Figure 14 is the circuit diagram for the SSR for eliminating main thyristor.

Figure 15 is the SSR used under exchange circuit diagram.

Figure 16 is the equivalent circuit diagram of the light-triggered coupler of the SSR shown in pie graph 15.

Figure 17 is the figure for the outline pattern layout for representing conventional bidirectional light controlled thyristor.

Figure 18 is the sectional view seen of the B-B ' directions of arrow for the Figure 17 for representing state when light guide is logical.

The sectional view that Figure 17 of state when Figure 19 is commutation when the being denoted as light shut-off B-B ' directions of arrow are seen.

Embodiment

Hereinafter, by embodiment illustrated, the present invention is described in detail.

First embodiment

Fig. 1 represents the outline pattern layout of the bidirectional light controlled thyristor chip of present embodiment, and Fig. 2 is Fig. 1 D-D ' arrows The section skeleton diagram that head direction is seen.

The bidirectional light controlled thyristor chip of present embodiment, as depicted in figs. 1 and 2, including：Constituting the N-type silicon of chip The CH1 formed separated from each other on the surface of substrate 41 the first photo thyristor 42a and CH2 the second photo thyristor 42b.

Above-mentioned first photo thyristor 42a and the second photo thyristor 42b each have：The anode diffusion region 43 of p-type； The control pole diffusion zone 44 of the p-type relative with anode diffusion region 43；With in the control pole diffusion zone 44 and anode diffusion The cathode diffusion region domain 45 for the N-type that region 43 is relatively formed.So, gone from anode diffusion region 43 to cathode diffusion region domain 45 Form PNPN portions.In addition, 46 be control pole resistance region.

In addition, along the periphery of said chip, being formed with the high concentration as raceway groove cut through (channel stopper) N-type diffusion zone 47.Further, it is shown in dotted line on high concentration N-type diffusion zone 47, it is formed with Al electrodes 47a.In addition, Al electrodes are formed with the way of covering anode diffusion region 43 43a (are represented by dashed line), with cover control pole diffusion zone 44, The mode of cathode diffusion region domain 45 and control pole resistance region 46 is formed with Al electrodes and 44a (is represented by dashed line).

Above-mentioned bidirectional light controlled thyristor, overlook when, as shown in figure 1, with relative to center line E-E ' and with the center The orthogonal line segment D-D ' of line intersection point 180 degree is rotationally symmetrical, i.e., the pattern relative to above-mentioned intersection point substantially point symmetry.In addition, from Seen on section, as shown in Fig. 2 being configured to right relative to line segment F-F ' the substantially left and right of the vertical direction orthogonal with center line E-E ' Claim.That is, the first photo thyristor for being above-mentioned CH1 relative to center line E-E ' and the line segment F-F ' photo thyristors for being located at left side 42a, the second photo thyristor for being above-mentioned CH2 relative to center line E-E ' and the line segment F-F ' photo thyristors for being located at right side 42b。

In addition, Al electrodes 43a and CH2 on above-mentioned CH1 the first photo thyristor 42a anode diffusion region 43 Al electrode 44a on second photo thyristor 42b cathode diffusion region domain 45, pass through Au lines 48a, 48b and lead frame T1 connections. In addition, the second light-operated brilliant lock of Al the electrodes 44a and CH2 on CH1 the first photo thyristor 42a cathode diffusion region domain 45 Al electrode 43a on pipe 42b anode diffusion region 43, are connected by Au lines 48a ', 48b ' with lead frame T2.So, CH1 First photo thyristor 42a and CH2 the second photo thyristor 42b is connected up by wire bonding reverse parallel connection.

In addition, in this bidirectional light controlled thyristor, in above-mentioned first photo thyristor 42a and the second photo thyristor 42b In, the length direction in anode diffusion region 43 and cathode diffusion region domain 45 is being set to first direction, will hung down with the first direction Straight and with N-type silicon substrate 41 surface direction that be substantially parallel be set to second direction in the case of, in above-mentioned second direction, chip The distance between the cut surface relative with control pole diffusion zone 44 and the control pole diffusion zone 44 X in the cut surface of most peripheral It is set as within 400 μm.

Hereinafter, reference picture 3 and Fig. 4, exchange phase behaviour Icom obtain being said the reasons why improvement in the region of X≤400 μm It is bright.Fig. 3 and Fig. 4, with Fig. 2 again it is the section skeleton diagram that Fig. 1 D-D ' directions are seen, it is above-mentioned apart from X be " X≤400 μm ".Its In, Fig. 3 represents state when light guide is logical, state during voltage reversal when Fig. 4 is denoted as light shut-off (during commutation).

As shown in figure 3, the minority carrier 49 produced during the first photo thyristor 42a conductings of above-mentioned CH1 sides, in Fig. 4 During shown commutation, using the electric potential gradient of this bidirectional light controlled thyristor, it is recycled to CH1 the first photo thyristor 42a's Anode diffusion region 43 or CH2 the second photo thyristor 42b control pole diffusion zone 44.In this case, when being recovered To the control pole diffusion zone 44 of CH2 sides minority carrier amount exceed some critical value when, constitute CH2 the second light-operated crystalline substance The NPN transistor conducting in brake tube 42b above-mentioned PNPN portions, promotes CH2 the second photo thyristor 42b positive feedbacks, second is light-operated IGCT 42b is turned on, and is caused above-mentioned " commutation failure ".

Therefore, in order to suppress above-mentioned " commutation failure ", it is necessary to as far as possible increase the critical value Icom of operating current.In order to Make Icom increases, it is necessary to suppress to be recycled to the amount of the minority carrier of the control pole diffusion zone 44 of CH2 sides.

Here, when the cut surface and control pole diffusion zone of the chip periphery for the first photo thyristor 42a for making above-mentioned CH1 When the distance between 44 X reduce, as shown in figure 3, the minority carrier 49 produced in conducting in CH1 sides, is being migrated to CH2 sides Before, as shown in figure 4, being recycled to the cut surface of CH1 sides.

Therefore, the cut surface of said chip periphery is preferably meeting originally bidirectional light controlled with control pole diffusion layer 44 apart from X On the basis of characteristic (for example, the characteristic such as pressure-resistant) beyond the above-mentioned commutation characteristic of IGCT, reduce to greatest extent.It is especially excellent Select X≤400 μm.

So, in the present embodiment, above-mentioned first photo thyristor 42a and the second photo thyristor 42b, above-mentioned Two directions, the distance between the cut surface of chip most peripheral and control pole diffusion zone 44 X is set as within 400 μm.

Thus, for example the minority carrier 49 produced in conducting in above-mentioned CH1 sides, is being migrated to before CH2 sides, such as scheme Shown in 4, the cut surface of CH1 sides is recycled to.Even if as a result, being separated without above-mentioned Schottky-barrier diode and above-mentioned raceway groove Region, also can greatly improve above-mentioned commutation characteristic.

Carry out light triggering with 1 chip to control accordingly, it is capable to access the increase that can suppress chip area and have The function of load is so as to omitting the cheap bidirectional light controlled thyristor chip of SSR main thyristor.

In the bidirectional light controlled thyristor chip of said structure, in order to realize high current, it is necessary to improve dash current Surge tolerance is so as to improve load current value.In general, it is necessary to 10 times of load current value of dash current surge tolerance, example Such as, it is necessary to 3A dash current surge tolerance in the case of specified product of the load current value for 0.3A.

In the pattern layout of this bidirectional light controlled thyristor chip shown in Fig. 1, when the first photo thyristor in CH1 42a or CH2 the second photo thyristor 42b anode diffusion region 43 and the control with a mutually relative linear side When flowing the surge current as dash current between the cathode diffusion region domain 45 of pole diffusion zone 44/ processed, as shown in figure 3, from sun The electric current that the sidepiece of pole diffusion zone 43 flows to transverse direction (side surface direction), in the cathode diffusion region domain of control pole diffusion zone 44/ 45 above-mentioned first direction central portion is concentrated and causes to produce knot destruction.Therefore, this bidirectional light controlled thyristor chip is being realized , it is necessary to relax the current convergence of the above-mentioned first direction central portion to chip in terms of high currentization.

The present invention is by changing above-mentioned anode diffusion region 43, control pole diffusion zone 44 and the figure in cathode diffusion region domain 45 Case structure, come the mitigation of current convergence from the above-mentioned first direction central portion to said chip that realize.

First, in the present embodiment, by changing the relative with anode diffusion region 43 of above-mentioned cathode diffusion region domain 45 Side shape, relax the current convergence of the above-mentioned first direction central portion to said chip.

Fig. 5 represents the anode diffusion region 43 of the above-mentioned first photo thyristor 42a sides of the pattern layout shown in Fig. 1, control Pole diffusion zone 44 processed and the pattern skeleton diagram in cathode diffusion region domain 45.In Figure 5, anode diffusion region 43 and control pole diffusion The pattern in region 44, it is same with the situation of the pattern layout shown in Fig. 1 rectangular.And the pattern in cathode diffusion region domain 45, with The relative side 45a in anode diffusion region 43 above-mentioned first direction central portion is formed with rectangular-shaped notch part 50.

By so, when in above-mentioned anode diffusion region 43 and the (control of 44/ cathode diffusion region domain of control pole diffusion zone 45 Pole diffusion zone 44 and the complex in cathode diffusion region domain 45) between in the case of impact flow electric current, from anode diffusion region 43 are supplied to the electricity for concentrating on above-mentioned first direction central portion in the electric current in the cathode diffusion region domain 45 of control pole diffusion zone 44/ A part for stream, to notch part 50 the distance away from P control poles composition surface compared with median wall 50a closer to two side 50b, 50c flows.Wherein, above-mentioned " P control poles composition surface " is the engagement with N-type silicon substrate 41 of the control pole diffusion zone 44 of p-type Face, is the side relative with anode diffusion region 43 of control pole diffusion zone 44.

So, the above-mentioned first direction central portion in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/ is concentrated Electric current is dispersed to two side 50b, 50c, thus, is relaxed to the current convergence of above-mentioned first direction central portion.As a result, It can prevent the knot in the cathode diffusion region domain 45 of control pole diffusion zone 44/ from destroying, so that it is pressure-resistant to improve dash current surge.

Here, the knot destruction in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/, at the initial stage of destruction, knot is relative Most shallow cathode diffusion region domain 45 is destroyed, and then destruction feeds through to control pole diffusion zone 44.Knot destruction is carried out to control pole Which position-based in the cathode diffusion region domain 45 of diffusion zone 44/ also has knot destruction to rest on only negative electrode expansion in dash current amount Dissipate the situation of the destruction in region 45.

Fig. 6 represents the relation of the surge tolerance of dash current and the chip area of bidirectional light controlled thyristor chip.By making It is 1mm in chip area with the pattern in the cathode diffusion region domain 45 of present embodiment²~8mm²When, it is possible to increase surge tolerance. In addition, surge tolerance does not rise proportionally with chip area.Its reason is because current convergence position exists uneven.

As previously discussed, in the present embodiment, bidirectional light controlled thyristor chip, when overlooking, as shown in figure 1, having Intersection point 180 degree relative to center line E-E ' and the line segment D-D ' orthogonal with the center line is rotationally symmetrical, i.e., relative to above-mentioned friendship The pattern of point point symmetry, from section, as shown in Fig. 2 being configured to relative to the vertical direction orthogonal with center line E-E ' Line segment F-F ' is symmetrical.Relative to the first photo thyristor that center line E-E ' and line segment F-F ' are formed with CH1 in left side 42a, CH2 the second photo thyristor 42b is formed with right side.

Above-mentioned first photo thyristor 42a and the second photo thyristor 42b each have：The anode diffusion region 43 of p-type； The control pole diffusion zone 44 of the p-type relative with anode diffusion region 43；With in the control pole diffusion zone 44 and anode diffusion The cathode diffusion region domain 45 for the N-type that region 43 is relatively formed.In addition, in above-mentioned second direction, by cutting for chip most peripheral The distance between face and control pole diffusion zone 44 X are set as within 400 μm.

Therefore, it is possible to will for example conducting when above-mentioned CH1 sides produce minority carrier 49, migrate to CH2 sides it Before, it is recycled to the cut surface of CH1 sides.As a result, can not increase chip area and omit SSR main thyristor, it can obtain To cheap bidirectional light controlled thyristor chip.

In addition, the pattern in above-mentioned cathode diffusion region domain 45, above-mentioned the of the side 45a relative with anode diffusion region 43 One direction central portion is formed with rectangular-shaped notch part 50.Therefore, when in anode diffusion region 43 and control pole diffusion zone 44/ Between cathode diffusion region domain 45 in the case of impact flow electric current, it can make to be supplied to control pole diffusion from anode diffusion region 43 The electric current for concentrating on above-mentioned first direction central portion in the electric current in the cathode diffusion region domain 45 of region 44/, is distributed to notch part 50 Two side 50b, 50c, the above-mentioned first direction central portion to the cathode diffusion region domain 45 of control pole diffusion zone 44/ can be relaxed Current convergence.

Therefore, it is possible to prevent the knot in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/ from destroying so as to improve impact Current surge is pressure-resistant, can realize high current.

In addition, in the present embodiment, in the side 45a in above-mentioned cathode diffusion region domain 45 above-mentioned first direction center Portion, is formed with rectangular-shaped notch part 50.But, the shape of above-mentioned notch part is not limited to rectangle, or semicircle Or ellipse.As long as importantly, to cause the above-mentioned P control poles composition surface from control pole diffusion zone 44 to side 45a's Distance in above-mentioned second direction turns into maximum shape in above-mentioned first direction central portion.

Second embodiment

The basic pattern layout of the bidirectional light controlled thyristor chip of present embodiment, and in above-mentioned first embodiment Pattern layout shown in Fig. 1 is identical.In addition, the D-D ' shown in Fig. 2 in basic longitudinal section, with above-mentioned first embodiment The section skeleton diagram that the direction of arrow is seen is identical.

Therefore, it in the bidirectional light controlled thyristor chip of present embodiment, can also obtain that chip area can be suppressed Increase and with is carried out with 1 chip light trigger control load function so as to omit SSR main thyristor it is honest and clean The bidirectional light controlled thyristor chip of valency.

In addition, the above is also same in following all embodiments.

In the present embodiment, the situation with above-mentioned first embodiment is same, by changing above-mentioned cathode diffusion region domain The shape of 45 side relative with anode diffusion region 43, to relax the electricity of the above-mentioned first direction central portion to said chip In adfluxion.

Fig. 7 represents the anode diffusion region 43 of the above-mentioned first photo thyristor 42a sides of the pattern layout shown in Fig. 1, control Pole diffusion zone 44 processed and the pattern skeleton diagram in cathode diffusion region domain 45.In the figure 7, anode diffusion region 43 and control pole diffusion The pattern in region 44, it is same with the situation of the pattern layout shown in Fig. 1 rectangular.And the pattern in cathode diffusion region domain 45, upper State first direction center and be divided into two parts 51a and 51b.It is being used as the first cathode diffusion region domain 51a and the diffusion of the second negative electrode End face 52a, 52b of region 51b mutual relative above-mentioned divisional plane, be provided with cause away from above-mentioned P control poles composition surface away from Bigger inclination is spaced from more two close end face 52a, 52b.That is, the distance between both ends of the surface 52a, 52b, and away from above-mentioned P control poles The distance on composition surface inversely reduces.

By in such manner, it is possible to make the moon with the composition surface of control pole diffusion zone 44 as above-mentioned cathode diffusion region domain 45 The length on pole composition surface expeditiously increases.When in anode diffusion region 43 and the cathode diffusion region domain of control pole diffusion zone 44/ Between 45 in the case of impact flow electric current, the cathode diffusion region of control pole diffusion zone 44/ is supplied to from anode diffusion region 43 A part for the electric current for concentrating on above-mentioned first direction central portion in the electric current in domain 45, to the first cathode diffusion region domain 51a's P control poles near with the second cathode diffusion region domain 51b end face 52b distance away from above-mentioned P control poles composition surface end face 52a connect Close the region flowing of surface side.

So, the above-mentioned first direction central portion in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/ is concentrated Electric current, the region for engaging surface side to the P control poles of above-mentioned both ends of the surface 52a, 52b extends and disperseed, and thus, makes to above-mentioned first The current convergence of direction central portion relaxes.As a result, can prevent the knot in the cathode diffusion region domain 45 of control pole diffusion zone 44/ from breaking It is bad, so that it is pressure-resistant to improve dash current surge.

As previously discussed, in the present embodiment, bidirectional light controlled thyristor chip, the situation with above-mentioned first embodiment Equally, it can not increase chip area and omit SSR main thyristor, cheap bidirectional light controlled thyristor core can be obtained Piece.

In addition, the pattern in above-mentioned cathode diffusion region domain 45, be divided into above-mentioned first direction center two parts 51a and 51b, in the end face 52a and the second cathode diffusion region domain 51b of the first mutually relative cathode diffusion region domain 51a end face 52b, if It is equipped with so that the inclination that the distance between both ends of the surface 52a, 52b inversely reduces with the distance away from above-mentioned P control poles composition surface.

Therefore, when the flowing between above-mentioned anode diffusion region 43 and the cathode diffusion region domain 45 of control pole diffusion zone 44/ In the case of dash current, the above-mentioned first direction central portion in the cathode diffusion region domain 45 of control pole diffusion zone 44/ can be made The electric current of concentration, engages the region extension of surface side in the P control poles of above-mentioned both ends of the surface 52a, 52b and disperses, can relax upwards State the current convergence of first direction central portion.

As a result, can prevent the knot in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/ from destroying to improve punching Hit current surge pressure-resistant, high current can be realized.

3rd embodiment

In fig. 8, the figure of the anode diffusion region 43 of above-mentioned first photo thyristor 42a sides and control pole diffusion zone 44 Case, it is same with the situation of the pattern layout shown in Fig. 1 rectangular.And in the pattern in cathode diffusion region domain 45, with anode diffusion region The relative side 45a in domain 43 is with the distance away from above-mentioned P control poles composition surface in above-mentioned first direction center than above-mentioned first direction The mode of the distance away from above-mentioned P control poles composition surface at both ends, is formed as the shape of the arc-shaped of above-mentioned central portion depression.

By so, when between above-mentioned anode diffusion region 43 and the cathode diffusion region domain 45 of control pole diffusion zone 44/ In the case of impact flow electric current, the cathode diffusion region domain 45 of control pole diffusion zone 44/ is supplied to from anode diffusion region 43 A part for the electric current for concentrating on above-mentioned first direction central portion in electric current, is controlled to cathode diffusion region domain 45 away from above-mentioned P Flow at the above-mentioned both ends that the distance on pole composition surface is short.

So, the above-mentioned first direction central portion in the above-mentioned cathode diffusion region domain 45 of control pole diffusion zone 44/ is concentrated Electric current, extends and is disperseed to the above-mentioned both ends side in cathode diffusion region domain 45, thus, made to above-mentioned first direction central portion Current convergence relaxes.As a result, can prevent the knot in the cathode diffusion region domain 45 of control pole diffusion zone 44/ from destroying, so as to improve Dash current surge is pressure-resistant.As a result, high current can be realized.

That is, according to present embodiment, it can obtain suppressing the increasing of chip area, cheap and high electricity can be realized The bidirectional light controlled thyristor chip of fluidisation.

4th embodiment

In the present embodiment, by changing the side relative with anode diffusion region 43 of above-mentioned control pole diffusion zone 44 Side 44b shape, to relax the current convergence of the above-mentioned first direction central portion to said chip.

In fig .9, the figure in the anode diffusion region 43 of above-mentioned first photo thyristor 42a sides and cathode diffusion region domain 45 Case, it is same with the situation of the pattern layout shown in Fig. 1 rectangular.And in the pattern of control pole diffusion zone 44, with anode diffusion The relative side 44b in region 43 is with the distance away from above-mentioned negative electrode composition surface in above-mentioned first direction center than above-mentioned first direction two The mode of the distance away from above-mentioned negative electrode composition surface of end, is formed as the shape for the arc-shaped that above-mentioned central portion is protruded.

By so, when between above-mentioned anode diffusion region 43 and the cathode diffusion region domain 45 of control pole diffusion zone 44/ In the case of impact flow electric current, the cathode diffusion region domain 45 of control pole diffusion zone 44/ is supplied to from anode diffusion region 43 Electric current, the distance away from anode diffusion region 43 closer to above-mentioned first direction central portion concentrate.Concentrate on above-mentioned first direction A part for the electric current of central portion, to the short above-mentioned two ends of the distance away from above-mentioned P control poles composition surface in cathode diffusion region domain 45 Flow portion side.

5th embodiment

In the present embodiment, by changing expanding with anode for above-mentioned control pole diffusion zone 44 and cathode diffusion region domain 45 Region 43 relative side 44b, 45a shape is dissipated, to relax the electric current collection of the above-mentioned first direction central portion to said chip In.

In Fig. 10, the pattern in the anode diffusion region 43 of above-mentioned first photo thyristor 42a sides, with the figure shown in Fig. 1 The situation of case layout is equally rectangular.And in control pole diffusion zone 44 and the pattern in cathode diffusion region domain 45, with anode diffusion The relative side 44b and side 45a of region 43 is above-mentioned with the ratio of the distance away from anode diffusion region 43 in above-mentioned first direction center The mode of the distance away from anode diffusion region 43 at first direction both ends, is formed as the arc-shaped of above-mentioned central portion depression Shape.But, the distances of the side 45a away from above-mentioned P control poles composition surface in cathode diffusion region domain 45 is whole in above-mentioned first direction Region is roughly equal.

By so, above-mentioned control pole diffusion zone 44 and cathode diffusion region domain 45 away from anode diffusion region 43 away from From sleekly changing to " short " at both ends from " length " of above-mentioned first direction central portion, therefore, when in anode diffusion region 43 Between the cathode diffusion region domain 45 of control pole diffusion zone 44/ in the case of impact flow electric current, supplied from anode diffusion region 43 Be given to the electric current in the cathode diffusion region domain 45 of control pole diffusion zone 44/ becomes generally uniform on above-mentioned first direction, to above-mentioned The current convergence of first direction central portion is relaxed.

6th embodiment

In the present embodiment, by changing the side relative with control pole diffusion zone 44 in above-mentioned anode diffusion region 43 Side 43b shape, to relax the current convergence of the above-mentioned first direction central portion to said chip.

In fig. 11, the control pole diffusion zone 44 of above-mentioned first photo thyristor 42a sides and cathode diffusion region domain 45 Pattern, it is same with the situation of the pattern layout shown in Fig. 1 rectangular.And in the pattern in anode diffusion region 43, expand with control pole The relative side 43b in region 44 is dissipated with the distance away from control pole diffusion zone 44 in above-mentioned first direction center than above-mentioned first party To the mode of the distance away from control pole diffusion zone 44 at both ends, be formed as the shape of the arc-shaped of above-mentioned central portion depression Shape.

By so, the distance away from control pole diffusion zone 44 in above-mentioned anode diffusion region 43, from above-mentioned first direction " length " of central portion sleekly changes to " short " at both ends, therefore, when in anode diffusion region 43 and control pole diffusion zone Between 44/ cathode diffusion region domain 45 in the case of impact flow electric current, control pole diffusion region is supplied to from anode diffusion region 43 The electric current in the cathode diffusion region domain 45 of domain 44/ becomes generally uniform on above-mentioned first direction, to above-mentioned first direction central portion Current convergence is relaxed.

7th embodiment

In the present embodiment, by changing the side relative with control pole diffusion zone 44 in above-mentioned anode diffusion region 43 Side 43b and control pole diffusion zone 44 and side 44b, the 45a relative with anode diffusion region 43 in cathode diffusion region domain 45 Shape, to relax the current convergence of the above-mentioned first direction central portion to said chip.

In fig. 12, in the pattern in the anode diffusion region 43 of above-mentioned first photo thyristor 42a sides, spread with control pole The relative side 43b in region 44 is formed as the shape of the arc-shaped of above-mentioned central portion depression.Equally, the He of control pole diffusion zone 44 In the pattern in cathode diffusion region domain 45, the side 44b and side 45a relative with anode diffusion region 43 is formed as above-mentioned central portion The shape of the arc-shaped of depression.But, the distances of the side 45a away from above-mentioned P control poles composition surface in cathode diffusion region domain 45, upper State first direction whole region roughly equal.

By so, between above-mentioned anode diffusion region 43 and the cathode diffusion region domain 45 of control pole diffusion zone 44/ away from From, " short " from " length " of above-mentioned first direction central portion to both ends sleekly and than above-mentioned 5th embodiment and on State the 6th embodiment larger to change, therefore, when in anode diffusion region 43 and the cathode diffusion region of control pole diffusion zone 44/ Between domain 45 in the case of impact flow electric current, the diffusion of the negative electrode of control pole diffusion zone 44/ is supplied to from anode diffusion region 43 The electric current in region 45 becomes evenly on above-mentioned first direction, and the current convergence to above-mentioned first direction central portion is delayed With.

In addition, present embodiment is equivalent to by the patterning application in the anode diffusion region 43 of above-mentioned 6th embodiment In above-mentioned 5th embodiment control pole diffusion zone 44 and cathode diffusion region domain 45 pattern situation.But, the present invention Above-mentioned 5th embodiment is not limited to, can also be applied in above-mentioned first embodiment~above-mentioned 4th embodiment Any one embodiment.

8th embodiment

In the present embodiment, by the Al electrodes 43a on above-mentioned anode diffusion region 43 and cathode diffusion region domain 45 On Al electrodes 44a connection Au lines 48a, 48a ' position, to relax the electricity of the above-mentioned first direction central portion to said chip In adfluxion.

Figure 13 represents the anode diffusion region 43 of the first photo thyristor 42a sides of the pattern layout shown in Fig. 1, control pole Diffusion zone 44 and the pattern skeleton diagram in cathode diffusion region domain 45.Here, the anode diffusion region 43 of present embodiment, control pole Diffusion zone 44 and the pattern in cathode diffusion region domain 45, with identical with the pattern shown in Fig. 5 in above-mentioned first embodiment Pattern.Therefore, it is possible to make the electric current for the above-mentioned first direction central portion for concentrating on cathode diffusion region domain 45, to notch part 50 Two side 50b, 50c disperse, and can relax the current convergence of the above-mentioned first direction central portion to cathode diffusion region domain 45.

In addition, in the present embodiment, by the above-mentioned first direction center by the chip of above-mentioned N-type silicon substrate 41, , will be from chip center line CL to negative electrode and the line segment parallel with above-mentioned line segment D-D ' (reference picture 1) is set to chip center line CL In the case that beeline in the distance of both ends of the surface 45b, 45c of diffusion zone 45 is set to L, it is considered to away from chip center line CL's Distance is L/2 and the line segment G-G ' and line segment H-H ' parallel with chip center line CL.In anode diffusion region 43 and line segment G- The position that G ' and line segment H-H ' intersects, is formed the Al electrodes 43a (reference picture 1) on anode diffusion region 43 and lead frame T1 (reference picture 1) carries out the Au lines 48a of wire bonding metal ball 53a, 53b.Equally, cathode diffusion region domain 45 and line segment The position that G-G ' and line segment H-H ' intersects, is formed the Al electrodes 44a (reference picture 1) on cathode diffusion region domain 45 and lead frame T2 (reference picture 1) carries out the Au lines 48a ' of wire bonding metal ball 54a, 54b.

I.e., in the present embodiment, heart line CL both sides away from chip center line CL are 2 of distance of L/2 in the chips Position carry out connection from above-mentioned anode diffusion region 43 to lead frame T1 and connection from cathode diffusion region domain 45 to lead frame T2.

Therefore, according to present embodiment, it can make from above-mentioned lead frame T1 to the electric current in above-mentioned anode diffusion region domain 43 Supply position and from cathode diffusion region domain 45 to the outflow position of lead frame T2 electric current, is distributed to chip center line CL both sides Away from chip center line CL be L/2 equidistant 2 positions.

I.e., in the present embodiment, above-mentioned cathode diffusion region domain 45 side 45a above-mentioned first direction central portion shape The notch part 50 of rectangular in form, so as to concentrate on the current dissipation of the above-mentioned first direction central portion in cathode diffusion region domain 45 to lacking Two side 50b, 50c of oral area 50, in addition, make to supply the position of electric current and from negative electrode to above-mentioned anode diffusion region domain 43 Diffusion zone 45 flows out the position of electric current, is distributed to 2 positions for L/2 distance away from above-mentioned first direction central portion.Therefore, In the case of the impact flow electric current between anode diffusion region 43 and the cathode diffusion region domain 45 of control pole diffusion zone 44/, It can make to be supplied to the current convergence in the cathode diffusion region domain 45 of control pole diffusion zone 44/ to above-mentioned from anode diffusion region 43 The situation of one direction central portion is further prevented, can further relax the electric current collection to above-mentioned first direction central portion In.

In addition, in the present embodiment, being illustrated by taking ball bonding as an example, but it is also same in the case of wedge bonding.

In addition, in the present embodiment, being carried out in case of following structure is applied into above-mentioned first embodiment Explanation：2 positions away from the distance that chip center line CL is L/2 of heart line CL both sides carry out above-mentioned anode diffusion in the chips Connection from region 43 to lead frame T1 and connection from cathode diffusion region domain 45 to lead frame T2.But, the present invention is not limited to This, can also be applied to any one embodiment in the embodiment of second embodiment~the 7th.

9th embodiment

Present embodiment is directed to use with any one embodiment party in above-mentioned first embodiment~above-mentioned 8th embodiment The light-triggered coupler of the bidirectional light controlled thyristor chip of formula and the SSR using the light-triggered coupler.

Figure 14 represents the SSR of present embodiment circuit structure.The SSR of present embodiment, with as shown in figure 15 In the conventional SSR of structure, such as, in order to cut down number of components, eliminate main thyristor 4.Therefore, in fig. 14, for figure SSR identical parts shown in 15, imparting is identically numbered with Figure 15.

As the bidirectional light controlled thyristor 2 of the light triggering of present embodiment, the tool of high current can be realized by having used There is any one embodiment in PNPN elements, above-mentioned first embodiment~above-mentioned 8th embodiment of transversary Bidirectional light controlled thyristor chip.Therefore, the light-triggered coupler 3 of the bidirectional light controlled thyristor 2 and light-emitting component 1 is included, even if The two-way of the PNPN elements with transversary is being used in order to directly control to load according to the optical signal for carrying out self-emission device 1 In the case of light controlled thyristor chip 2, current efficiency can be also improved.

In addition, the SSR 8 of present embodiment, used make it possible to it is straight according to the optical signal from above-mentioned light-emitting component 1 Connect control load, the light-triggered coupler 3 and buffer circuit 7 that current efficiency is high.Therefore, it is possible to omit for controlling load Main thyristor, can realize the few cheap and high performance SSR 8 of number of components.

In addition, in the respective embodiments described above, as depicted in figs. 1 and 2, CH1 the first photo thyristor 42a's and CH2 Second photo thyristor 42b be all anode diffusion region 43 configure than control pole diffusion zone 44 more lean on center line E-E ' sides Position.

But, the present invention it is not absolutely required to above-mentioned anode diffusion region 43 and configure more lean on than control pole diffusion zone 44 The position of center line E-E ' sides.CH1 the first photo thyristor 42a and CH2 the second photo thyristor 42b is that control pole expands Scattered region 44 is configured more also to have no problem than anode diffusion region 43 by the position of center line E-E ' sides.

Situation in this case also with the bidirectional light controlled thyristor chip shown in Fig. 1 and Fig. 2 is same, by by chip most The distance between the cut surface and control pole diffusion zone 44 of periphery X is set as within 400 μm, such as in conducting above-mentioned The minority carrier that CH1 is produced, is migrating to before CH2 the cut surface that is recycled to CH1 sides.Therefore, even if without above-mentioned Xiao Special base barrier diode and above-mentioned raceway groove separated region, also can greatly improve commutation characteristic.

In addition, in the respective embodiments described above, anode diffusion region 43, control to above-mentioned first photo thyristor 42a sides Pole diffusion zone 44 processed and the pattern in cathode diffusion region domain 45 are illustrated, the second photo thyristor 42b sides also with the first light Control IGCT 42a sides same.

As previously discussed, bidirectional light controlled thyristor chip of the invention is characterised by：

Possesses the first photo thyristor portion 42a and second formed separated from each other on the surface of 1 semiconductor chip Photo thyristor portion 42b,

Above-mentioned each photo thyristor portion 42a, 42b have PNPN portions, and the PNPN portions include：Extend and have in a direction There is a kind of anode diffusion region 43 of conduction type in N-type and p-type；Lining with another conduction type in N-type and p-type Bottom 41；The control pole diffusion zone 44 with a kind of above-mentioned conduction type relative with above-mentioned anode diffusion region 43；With at this Relatively formed with above-mentioned anode diffusion region 43 in control pole diffusion zone 44 and there is above-mentioned another conduction type Cathode diffusion region domain 45,

Mutual two relative side 43b of above-mentioned anode diffusion region 43 and above-mentioned control pole diffusion zone 44,44b, And at least any one side in the side 45a relative with above-mentioned anode diffusion region 43 in above-mentioned cathode diffusion region domain 45 Flat shape, is formed as making from above-mentioned anode diffusion region 43 to above-mentioned control pole diffusion zone 44 and above-mentioned cathode diffusion region domain The concentration of the electric current of 45 supplies to the central portion in the said one direction of the bearing of trend as above-mentioned anode diffusion region 43 is delayed The shape of sum.

According to said structure, it can relax from above-mentioned anode diffusion region 43 to above-mentioned control pole diffusion zone 44 and above-mentioned The situation that central portion of the electric current that cathode diffusion region domain 45 is supplied in said one direction is concentrated.That is, when in above-mentioned anode diffusion The surge current as dash current is flowed between region 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ In the case of, the situation that central portion of the electric current in said one direction is concentrated can be relaxed.

According to the invention it is thus possible to prevent the knot in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ from breaking Bad so as to improve, dash current surge is pressure-resistant, can realize the bidirectional light controlled thyristor chip of the PNPN elements with transversary High currentization so as to improving current efficiency.

In addition, in the bidirectional light controlled thyristor chip of an embodiment,

The first side 45a relative with above-mentioned anode diffusion region 43 in above-mentioned cathode diffusion region domain 45 flat shape, It is formed so that on another direction orthogonal with said one direction from above-mentioned control pole diffusion zone 44 and above-mentioned sun Pole diffusion zone 43 relative to second side 44b to above-mentioned first side 45a distance said one direction central portion into For maximum shape.

According to the embodiment, spread from the above-mentioned second side 44b of above-mentioned control pole diffusion zone 44 to above-mentioned negative electrode The above-mentioned first side 45a in region 45 distance, the central portion in said one direction is maximum.Therefore, expand when in above-mentioned anode Dissipate between region 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ in the case of impact flow electric current, energy Enough make in being supplied to the electric current in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ from above-mentioned anode diffusion region 43 The central portion for concentrating on said one direction electric current a part, be distributed to from above-mentioned second side 44b to above-mentioned first The side 45a distance both sides nearer than the central portion in said one direction, can relax the central portion to said one direction Current convergence.

As a result, can prevent the knot in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ from destroying, so as to carry High surge currents surge is pressure-resistant.

Central portion of the above-mentioned cathode diffusion region domain 45 in said one direction is divided into two parts, in mutually relative point Face 52a, 52b are provided with inclination so that the divisional plane 52a, 52b interval according on another above-mentioned direction away from above-mentioned control The second side 44b of pole diffusion zone 44 processed distance and diminish (so that the divisional plane 52a, 52b interval are with above-mentioned another The distance of second side 44b away from above-mentioned control pole diffusion zone 44 on one direction becomes big and diminished).

According to the embodiment, the central portion in said one direction is divided into two-part above-mentioned cathode diffusion region domain 45 mutual relative two divisional planes 52a, 52b, are provided with the above-mentioned second side 44b to above-mentioned control pole diffusion zone 44 The inclination that side is opened.Therefore, when in above-mentioned anode diffusion region 43 and the above-mentioned cathode diffusion region of above-mentioned control pole diffusion zone 44/ Between domain 45 in the case of impact flow electric current, it can make to concentrate on the above-mentioned cathode diffusion region of above-mentioned control pole diffusion zone 44/ The electric current of the central portion in the said one direction in domain 45, with to above-mentioned two divisional plane 52a, 52b above-mentioned control pole diffusion region The mode of the region extension of the above-mentioned second side 44b sides in domain 44 is disperseed, so as to relax above-mentioned current convergence.

The above-mentioned first side 45a in above-mentioned cathode diffusion region domain 45 flat shape, with the central portion in said one direction The distance of the above-mentioned second side 44b away from above-mentioned control pole diffusion zone 44 on another above-mentioned direction, compare said one The distance of the above-mentioned second side 44b away from above-mentioned control pole diffusion zone 44 on another above-mentioned direction at direction both ends Mode, be formed as the shape of the arc-shaped of above-mentioned central portion depression.

According to the embodiment, the above-mentioned first side 45a in above-mentioned cathode diffusion region domain 45 is away from above-mentioned control pole diffusion region The above-mentioned second side 44b in domain 44 distance, the central portion in said one direction is maximum.Therefore, when in above-mentioned anode diffusion , can between region 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ in the case of impact flow electric current Make in being supplied to the electric current in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ from above-mentioned anode diffusion region 43 Concentrate on a part for the electric current of the central portion in said one direction, with to above-mentioned cathode diffusion region domain 45 away from above-mentioned control pole The mode of the short above-mentioned both ends extension of the above-mentioned second side 44b of diffusion zone 44 distance is disperseed, so as to relax above-mentioned electricity In adfluxion.

The above-mentioned second side 44b of above-mentioned control pole diffusion zone 44 flat shape, with the center in said one direction The distance away from above-mentioned anode diffusion region 43 on another above-mentioned direction in portion, than said one direction both ends above-mentioned The mode of distance away from above-mentioned anode diffusion region 43 on another direction, is formed as the arc-shaped of above-mentioned central portion depression Shape,

The above-mentioned first side 45a of the arc-shaped of the above-mentioned central portion depression in above-mentioned cathode diffusion region domain 45 and above-mentioned control Pole diffusion zone 44 above-mentioned central portion depression arc-shaped above-mentioned second side 44b on another above-mentioned direction away from From in said one direction, whole region is equal.

According to the embodiment, the above-mentioned second side 44b of above-mentioned control pole diffusion zone 44 flat shape is formed as The shape of the arc-shaped of the central portion depression in said one direction, the circle of the above-mentioned central portion depression in above-mentioned cathode diffusion region domain 45 The above-mentioned first side 45a and above-mentioned second side 44b of arcuation distance, in said one direction, whole region is equal.Therefore, When the impact flow electricity between above-mentioned anode diffusion region 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ In the case of stream, the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ is supplied to from above-mentioned anode diffusion region 43 Electric current become generally uniform on said one direction, relaxed to the current convergence of the central portion in said one direction.

The threeth side 44b relative with above-mentioned anode diffusion region 43 of above-mentioned control pole diffusion zone 44 planar shaped Shape, with another direction orthogonal with said one direction away from above-mentioned cathode diffusion region domain 45 and above-mentioned anode diffusion region The distance of the relative four side in domain 43, side of the central portion than the two ends minister in said one direction in said one direction Formula, is formed as the shape for the arc-shaped that above-mentioned central portion is protruded.

According to the embodiment, above-mentioned relative with above-mentioned anode diffusion region 43 of above-mentioned control pole diffusion zone 44 Distances of the three side 44b away from above-mentioned anode diffusion region 43, the central portion in said one direction is minimum.Therefore, when above-mentioned The situation of impact flow electric current between anode diffusion region 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ Under, the electric current in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ is supplied to from above-mentioned anode diffusion region 43, is collected In the distance away from above-mentioned anode diffusion region 43 closer to said one direction central portion.Concentrate in above-mentioned first direction A part for the electric current in centre portion, to the short above-mentioned two ends of the distance away from above-mentioned control pole diffusion zone 44 in cathode diffusion region domain 45 Flow portion side.As a result, being relaxed to the current convergence of the central portion in said one direction.

The fiveth side 43b relative with above-mentioned control pole diffusion zone 44 in above-mentioned anode diffusion region 43 planar shaped Shape, with sixth side relative with above-mentioned anode diffusion region 43 away from above-mentioned control pole diffusion zone 44 in the other directions Distance, mode of the central portion than the two ends minister in said one direction in said one direction be formed as above-mentioned center The shape of the arc-shaped of portion's depression.

According to the embodiment, the above-mentioned 5th side 43b in above-mentioned anode diffusion region 43 is away from above-mentioned control pole diffusion region The distance of above-mentioned 6th side in domain 44, the central portion in said one direction is maximum.Therefore, when in above-mentioned anode diffusion region Between 43 and the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ in the case of impact flow electric current, from above-mentioned sun Pole diffusion zone 43 is supplied to the electric current in the above-mentioned cathode diffusion region domain 45 of above-mentioned control pole diffusion zone 44/ in said one direction On become generally uniform, relaxed to the current convergence of the central portion in said one direction.

It is being set by the center in the said one direction of above-mentioned semiconductor chip and is extending in another above-mentioned direction Chip center line LC,

Beeline from said chip center line LC into the distance of the both ends of the surface in above-mentioned cathode diffusion region domain 45 is set For L,

And set parallel with said chip center line LC and left on said one direction from said chip center line LC In the case of L/2 the first line segment G-G ' and second line segment H-H ',

By the position intersected with above-mentioned first line segment G-G ' and above-mentioned second line segment H-H ' in above-mentioned anode diffusion region 43, The company of the front end of connecting lead wire (wire) during as to above-mentioned anode diffusion region 43 progress wire bonding (wire bonding) Connect position,

By the position intersected with above-mentioned first line segment G-G ' and above-mentioned second line segment H-H ' in above-mentioned cathode diffusion region domain 45, The link position of the front end of connecting wire during as to above-mentioned cathode diffusion region domain 45 progress wire bonding.

According to the embodiment, make the link position of lead during to above-mentioned anode diffusion region 43 progress wire bonding, To be left from the center in said one direction apart from L/2 position.On the other hand, make to draw above-mentioned cathode diffusion region domain 45 The link position of lead during wire bonding, is to be left from the center in said one direction apart from L/2 position.Therefore, it is possible to make The position of electric current is supplied to above-mentioned anode diffusion region 43 and via above-mentioned lead to above-mentioned cathode diffusion region via above-mentioned lead The position of electric current is flowed out in domain 45, is distributed to central equidistant 2 positions away from said one direction.

I.e., in the present embodiment, when in above-mentioned anode diffusion region 43 and the above-mentioned the moon of above-mentioned control pole diffusion zone 44/ Between pole diffusion zone 45 in the case of impact flow electric current, it can prevent from being supplied to above-mentioned control from above-mentioned anode diffusion region 43 The current convergence in the above-mentioned cathode diffusion region domain 45 of pole diffusion zone 44/ processed to said one direction central portion so that upwards The current convergence for stating the central portion in a direction further relaxes.

In addition, the light-triggered coupler of the present invention is characterised by, include the bidirectional light controlled thyristor core of the invention described above Piece and LED.

According to said structure, the bidirectional light controlled of the PNPN elements with transversary that can realize high current has been used Thyristor chip.Therefore, according to the light-triggered coupler, directly controlled even in for optical signal of the basis from above-mentioned LED Load and in the case of the bidirectional light controlled thyristor chip using the PNPN elements with transversary, can also improve electric current effect Rate.

In addition, the SSR of the present invention is characterised by, include the light-triggered coupler and buffer circuit of the invention described above.

According to said structure, use and made it possible to directly expeditiously control load according to the optical signal from LED Light-triggered coupler.Therefore, it is possible to omit the main thyristor for controlling load, can realize few cheap of number of components and High performance SSR.

Symbol description

1 ... light-emitting component (LED)

2 ... bidirectional light controlled thyristors

3 ... light-triggered couplers

7 ... buffer circuits

41 ... N-type silicon substrates

The photo thyristors of 42a ... first

The photo thyristors of 42b ... second

43 ... p type anode diffusion zones

43a, 44a, 47a ... Al electrodes

43b ... anode diffusions region side side

44 ... p-type control pole diffusion zones

The side of 44b ... control pole diffusion zones

45 ... N-type cathode diffusion regions domain

The side in 45a ... cathode diffusion regions domain

46 ... p-type control pole resistance regions

47 ... high concentration N-type diffusion zones

48a, 48b, 48a ', 48b ' ... Au lines

T1, T2 ... lead frame

49 ... minority carriers

50 ... notch parts

The median wall of 50a ... notch parts

The two side of 50b, 50c ... notch part

The first cathode diffusion regions of 51a ... domain

The second cathode diffusion regions of 51b ... domain

52a, 52b ... end face

The metal ball of 53a, 53b, 54a, 54b ... Au lines

Claims

1. a kind of bidirectional light controlled thyristor chip, it is characterised in that：

Possess the first photo thyristor portion formed separated from each other on the surface of 1 semiconductor chip and the second light-operated brilliant lock Pipe portion,

Each photo thyristor portion has PNPN portions, and the PNPN portions include：Extend in a direction and with N-type and p-type In a kind of conduction type anode diffusion region；Substrate with another conduction type in N-type and p-type；With the sun The relative control pole diffusion zone with a kind of conduction type of pole diffusion zone；With in the control pole diffusion zone with The anode diffusion region is relatively formed and the cathode diffusion region domain with another conduction type,

The anode diffusion region and mutual two relative sides of the control pole diffusion zone and negative electrode diffusion The flat shape of at least any one side in the side relative with the anode diffusion region in region, is formed as making from described The electric current that anode diffusion region is supplied to the control pole diffusion zone and the cathode diffusion region domain expands to as the anode The shape that the concentration of the central portion in one direction of the bearing of trend in region relaxes is dissipated,

The flat shape of the first side relative with the anode diffusion region in the cathode diffusion region domain, is formed so that It is relative with the anode diffusion region from the control pole diffusion zone with another direction that one direction is orthogonal Central portion of the distance in one direction of second side to the first side turn into maximum shape,

Central portion of the cathode diffusion region domain in one direction is divided into two parts, is set in mutually relative divisional plane Be equipped with inclination so that the interval of the divisional plane according on another described direction away from the control pole diffusion zone described the The distance of dual side-edge and diminish.

2. a kind of solid-state relay, it is characterised in that：

Including light-triggered coupler and buffer circuit,

The light-triggered coupler includes：Bidirectional light controlled thyristor chip described in claim 1；And light emitting diode.