CN104952837B - Connected medium layer, its production method and the interconnection layer including it - Google Patents
Connected medium layer, its production method and the interconnection layer including it Download PDFInfo
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Abstract
This application discloses a kind of connected medium layer, its production method and including its interconnection layer.Wherein connected medium layer, it is made of the material for including silicon, oxygen and carbon, including the initiation layer and base layer being set in turn on semiconductor substrate, wherein initiation layer includes by the sub- initiation layer of multilayer far from the setting of semiconductor substrate direction, and along far from semiconductor substrate direction, the content of oxygen element successively reduces in each straton initiation layer, and the content of carbon successively increases.In the connected medium layer, since Si-O bond energy is greater than Si-C bond energy, the mechanical strength far from each initiation layer on semiconductor substrate direction can be reduced successively, to reduce the difference of mechanical strength between initiation layer and base layer in connected medium layer.Therefore, when subsequent etching connected medium layer forms through-hole, it will form between initiation layer and base layer in through-hole and be smoothly connected structure, to improve the bond strength in interconnection layer between connected medium layer and metal layer.
Description
Technical field
This application involves production of integrated circuits technical fields, in particular to a kind of connected medium layer, its production method
And the interconnection layer including it.
Background technique
In the last part technology (BEOL) of integrated circuit, need to form interconnection layer on the semiconductor device to connect semiconductor
Device and peripheral circuit.Wherein above-mentioned interconnection layer includes connected medium layer, the through-hole being set in connected medium layer, and setting
Metal layer in through-hole, and semiconductor devices and peripheral circuit are formed by metal layer and are electrically connected.With ultra-large integrated
The continuous diminution of the size of device in circuit, the capacitor formed in interconnection layer between connected medium layer and metal layer are gradually increased,
And then the signal delay (RC retardation ratio) in integrated circuit is caused to be gradually increased.Currently, generalling use low-k (Low-K) material
Material production connected medium layer is to reduce the capacitor in interconnection layer.Wherein, the dielectric constant of material is 1.7~2.2, becomes main
Advanced low-k materials.
When forming connected medium layer using above-mentioned porous polymeric materials, usually it is with carbon containing silane or carbon containing siloxanes
Precursor gas, and precursor gas and oxygen are reacted, with connected medium layer on a semiconductor substrate.It is situated between forming above-mentioned interconnection
In the step of matter layer, first it is generally necessary to reduce the flow of precursor gas and oxygen, to reduce reaction rate between the two, from
And reduce the deposition rate of material, and then formed on a semiconductor substrate it is relatively compact, can be formed with semiconductor substrate it is good
The material layer of good bond strength, is commonly referred to as initiation layer for this part-structure.After the deposition for completing initiation layer, it usually needs
Increase the flow of precursor gas and oxygen, to improve reaction rate between the two, to improve the deposition rate of material, in turn
The producing efficiency for improving connected medium layer, is commonly referred to as base layer for this part-structure.In the above-mentioned methods, it is formed by base
The consistency of body layer is lower with respect to for initiation layer, so that the mechanical strength of base layer is less than the mechanical strength of initiation layer.
During subsequent etching connected medium layer forms through-hole, since the mechanical strength of base layer is less than initiation layer
Mechanical strength, therefore the width for etching removal base layer can be greater than the width of etching removal initiation layer, thus initial in through-holes
It will form biggish step structure between layer and base layer.It is formed after metal layer in through-holes, above-mentioned step structure can reduce
Bond strength between metal layer and connected medium layer, and then influence the stability of interconnection layer.Currently, not having also regarding to the issue above
There is effective solution method.
Summary of the invention
The application is intended to provide a kind of connected medium layer, its production method and the interconnection layer including it, to improve interconnection layer
Bond strength between middle connected medium layer and metal layer.
This application provides a kind of connected medium layers, are made of the material comprising silicon, oxygen and carbon, including are set in turn in half
Initiation layer and base layer on conductor substrate, wherein initiation layer includes initial by multilayer far from the setting of semiconductor substrate direction
Layer, and the content of oxygen element successively reduces along separate semiconductor substrate direction, each layer initiation layer, the content of carbon successively increases
Add.
Further, in above-mentioned connected medium layer, in each straton initiation layer the content of oxygen element successively reduce 6wt%~
The content of 8wt%, carbon successively increase 4wt%~6wt%.
Further, in above-mentioned connected medium layer, initiation layer includes being arranged along far from semiconductor substrate direction, and first
Initiation layer, wherein the content of oxygen element is 34wt%~40wt%, and the content of carbon is 40wt%~44wt%；Second initiation layer,
Wherein the content of oxygen element is 26wt%~32wt%, and the content of carbon is 45wt%~50wt%.
Further, in above-mentioned connected medium layer, initiation layer further includes the third that the second sub- initiation layer setting is arranged in
Sub- initiation layer, the content of oxygen element is 20wt%~24wt% in the third initiation layer, the content of carbon be 50wt%~
54wt%。
Further, in above-mentioned connected medium layer, initiation layer with a thickness of the 1/10~1/5 of matrix ligament thickness.
Further, in above-mentioned connected medium layer, the thickness with a thickness of base layer of each straton initiation layer 1/40~
1/15。
Present invention also provides a kind of production methods of connected medium layer, and the connected medium layer is by including silicon, oxygen and carbon
Material composition, the production method for forming connected medium layer includes sequentially forming the step of initiation layer and base layer on a semiconductor substrate
Suddenly, the step of forming initiation layer includes: the carbon member by far from semiconductor substrate direction, the content for forming oxygen element is successively reduced
The sub- initiation layer of multilayer that the content of element successively increases.
Further, in the production method of above-mentioned connected medium layer, in the step of forming each straton initiation layer, by hydrocarbon
The silane or siloxanes or hydride siloxane that base and/or oxyl replace are precursor gas, itself and oxygen is made to react to be formed respectively
Sub- initiation layer.
Further, in the production method of above-mentioned connected medium layer, in the step of forming each layer initiation layer, by adjusting
The content that precursor gas and the ratio of oxygen form oxygen element successively reduces 6wt%~8wt%, and the content of carbon successively increases
Each layer initiation layer of 4wt%~6wt%.
Further, in the production method of above-mentioned connected medium layer, formed initiation layer the step of include: control precursor gas
The flow of body is 0.3~0.5mg/min, and the flow of oxygen is 150~300sccm, and the time of reaction is 1~3s, to form oxygen
The content of element is 34wt%~40wt%, and the content of carbon is the first sub- initiation layer of 40wt%~44wt%；Control precursor gas
The flow of body is 0.7~1.0mg/min, and the flow of oxygen is 50~100sccm, and the time of reaction is 1~3s, in the first son
The content that oxygen element is formed on initiation layer is 26wt%~32wt%, and the content of carbon is that the second son of 45wt%~50wt% is initial
Layer.
Further, in the production method of above-mentioned connected medium layer, formed initiation layer the step of further include: control forerunner
The flow of gas is 1.2~1.5mg/min, and the flow of oxygen is less than 10sccm, and the time of reaction is 5~15s, in the second son
The content that oxygen element is formed on initiation layer is 20wt%~24wt%, and third that the content of carbon is 50wt%~54wt% is initial
Layer.
Present invention also provides a kind of interconnection layers, including the connected medium layer being set on semiconductor substrate, are set to mutually
The even through-hole in dielectric layer, and the metal layer being set in through-hole, wherein connected medium layer is that the above-mentioned interconnection of the application is situated between
Matter layer.
Using technical solution provided by the present application, set initiation layer to make oxygen element along far from semiconductor substrate direction
Content successively reduces, the sub- initiation layer of the multilayer that the content of carbon successively increases.It is greater than the spy of Si-C bond energy using Si-O bond energy
Point, by changing the content of oxygen element and carbon in each sub- initiation layer, so that along initial far from each son in semiconductor substrate direction
The mechanical strength of layer successively reduces, to reduce the difference of mechanical strength between initiation layer and base layer in connected medium layer.It adopts
It will form between initiation layer and base layer in through-hole when being etched its formation through-hole with this connected medium layer and be smoothly connected knot
Structure, to improve the bond strength in interconnection layer between connected medium layer and metal layer.Meanwhile the application also adds initiation layer
Thickness, to increase the bonded area between initiation layer and metal layer, and then further increase connected medium in interconnection layer
Bond strength between layer and metal layer.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the SEM photograph of interconnection layer prepared by the embodiment of the present application 1；And
Fig. 2 shows the SEM photographs of interconnection layer prepared by the application comparative example 1.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also be intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
As described in background technique, biggish step will form in connected medium layer between initiation layer and base layer
Structure, above-mentioned step structure can reduce the bond strength between metal layer and connected medium layer, and then influence the stabilization of interconnection layer
Property.Present inventor studies regarding to the issue above, a kind of connected medium layer is proposed, by including silicon, oxygen and carbon
Material composition, including the initiation layer and base layer being set in turn on semiconductor substrate, wherein initiation layer includes partly being led by separate
The sub- initiation layer of multilayer of body base material direction setting, and along far from semiconductor substrate direction, oxygen element contains along each straton initiation layer
Amount successively reduces, and the content of carbon successively increases.The characteristics of being greater than Si-C bond energy using Si-O bond energy in this application, pass through
The content for changing oxygen element and carbon in each sub- initiation layer, make mechanical strength along each sub- initiation layer in semiconductor substrate direction according to
Secondary reduction, to reduce the difference of mechanical strength between initiation layer and base layer in connected medium layer.Therefore, mutual in subsequent etching
When even dielectric layer forms through-hole, it will form between initiation layer and base layer in through-hole and be smoothly connected structure, to improve interconnection layer
Bond strength between middle connected medium layer and metal layer.Meanwhile the application also adds the thickness of initiation layer, to increase
Bonded area between initiation layer and metal layer, and then further increase the knot in interconnection layer between connected medium layer and metal layer
Close intensity.
In above-mentioned initiation layer, those skilled in the art can select in each straton initiation layer according to teachings of the present application
The value added of the content of the decreasing value and carbon of the content of oxygen element, in the step of being subsequently formed through-hole, formed compared with
For smooth through-hole wall.In a preferred embodiment, the content of oxygen element successively reduces 6wt% in each straton initiation layer
The content of~8wt%, carbon successively increase 4wt%~6wt%.At this point, forming optimal concentration ladder between each straton initiation layer
Degree, to form optimal mechanical strength gradient between each sub- initiation layer.
In above-mentioned initiation layer, those skilled in the art can according to practical application set initiation layer the number of plies and it is each just
The component of beginning layer.In a preferred embodiment, initiation layer includes first along the first son far from the setting of semiconductor substrate direction
Beginning layer and the second sub- initiation layer.The content of oxygen element is 34wt%~40wt% in first sub- initiation layer, and the content of carbon is
40wt%~44wt%.The content of oxygen element is 26wt%~32wt% in second sub- initiation layer, the content of carbon be 45wt%~
50wt%.In this configuration, by setting two layers of initiation layer, and to oxygen element and carbon in each initiation layer is limited, so that respectively
Suitable concentration gradient is formed between sub- initiation layer, so that suitable mechanical strength gradient is formed between two straton initiation layers,
And then further increase the bond strength in interconnection layer between connected medium layer and metal layer.
It is further preferable that above-mentioned initiation layer still further comprise be arranged in the second sub- initiation layer setting third it is initial
Layer, the content of oxygen element is 20wt%~24wt% in the third initiation layer, and the content of carbon is 50wt%~54wt%.This
Optimal concentration gradient is formed between the sub- initiation layer of above layers in structure, to form optimal power between each sub- initiation layer
It learns intensity gradient and then further increases the bond strength in interconnection layer between connected medium layer and metal layer.
In above-mentioned initiation layer, the thickness of initiation layer is set according to common process.In a preferred embodiment,
The 1/10~1/5 of the thickness with a thickness of base layer of initiation layer.Initiation layer with above-mentioned thickness more favorably increase initiation layer and
Bonded area between metal layer, to further increase the bond strength in interconnection layer between connected medium layer and metal layer.
Similarly, in above-mentioned initiation layer, to the thickness of each straton initiation layer, there is no particular/special requirements, as long as forming mechanical strength successively
Incremental relationship.In a preferred embodiment, the 1/40 of the thickness with a thickness of base layer of each straton initiation layer
~1/15.Sub- initiation layer with above-mentioned thickness is more advantageous to the bond strength increased between each straton initiation layer, and then advantageous
Bond strength in raising interconnection layer between connected medium layer and metal layer.
Present invention also provides a kind of production methods of connected medium layer.This method is directed to by comprising silicon, oxygen and carbon
The connected medium layer of material composition.Its production method includes sequentially forming the step of initiation layer and base layer on a semiconductor substrate
Suddenly, wherein the step of forming initiation layer include: by far from semiconductor substrate direction, the content for forming oxygen element is successively reduced,
The sub- initiation layer of the multilayer that the content of carbon successively increases.
In above-mentioned production method, the characteristics of being greater than Si-C bond energy using Si-O bond energy, passes through and change each sub- initiation layer kind oxygen
The content of element and carbon drop the mechanical strength for each sub- initiation layer being upwardly formed far from semiconductor substrate side can successively
It is low, to reduce the difference of mechanical strength between initiation layer and base layer in connected medium layer.Therefore, in etching connected medium layer
When forming through-hole, it will form between initiation layer and base layer in through-hole and be smoothly connected structure, be situated between to improve and be interconnected in interconnection layer
Bond strength between matter layer and metal layer.
In the step of forming above-mentioned initiation layer, any means can be used, as long as being capable of forming oxygen element and carbon
The successively structure of alternation.In a preferred embodiment, by the silane or silicon oxygen of alkyl and/or oxyl substitution
Alkane is precursor gas, and precursor gas and oxygen is made to react to form each initiation layer.Wherein precursor gas can be dimethylethoxy
Base silane, methyldiethoxysilane, methylsiloxane or hydride siloxane.The technique of the reaction of above-mentioned precursor gas and oxygen
It can be plasma chemical vapor deposition, sub-atmospheric pressure chemical vapor deposition or high-aspect-ratio chemical vapor deposition etc..The application
Provided this method is simple and easy, and the production equipment of existing connected medium layer can not be changed, only become by simple parameter
Change can be realized.
In the step of forming each layer above-mentioned sub- initiation layer, oxygen member can be formed by adjusting precursor gas, the ratio of oxygen
Element content successively reduce 6wt%~8wt%, the content of carbon successively increases each straton initiation layer of 4wt%~6wt%, with
More smooth through-hole wall is formed in the step of being subsequently formed through-hole, and then improves connected medium layer and metal layer in interconnection layer
Between bond strength.
In the step of forming above-mentioned initiation layer, those skilled in the art can set institute's shape according to actual process demand
The component in each sub- initiation layer is controlled at the number of plies of sub- initiation layer, and by adjusting the ratio of precursor gas and oxygen.In one kind
In preferred embodiment, the step of forming initiation layer includes: that control the flow of precursor gas be 0.3~0.5mg/min, oxygen
Flow is 150~300sccm, and time of reaction is 1~3s, to form the content of oxygen element as 34wt%~40wt%, carbon
Content be 40wt%~44wt% the first sub- initiation layer；The flow for controlling precursor gas is 0.7~1.0mg/min, oxygen
Flow is 50~100sccm, and it is 26wt% to form the content of oxygen element on the first sub- initiation layer that the time of reaction, which is 1~3s,
~32wt%, the content of carbon are the second sub- initiation layer of 45wt%~50wt%.It is formed by shape between above-mentioned each sub- initiation layer
At suitable concentration gradient, to form suitable mechanical strength gradient between each sub- initiation layer, and then further increase mutually
The even bond strength in layer between connected medium layer and metal layer.
It is further preferable that the step of forming above-mentioned initiation layer still further comprises to form the sub- initiation layer of third, including following
Step: the flow for controlling precursor gas is 1.2~1.5mg/min, and the flow of oxygen is less than 10sccm, the time of reaction is 5~
15s is 20wt%~24wt% to form the content of oxygen element on the second sub- initiation layer, the content of carbon be 50wt%~
The sub- initiation layer of the third of 54wt%.It is formed by between above-mentioned each sub- initiation layer and forms optimal concentration gradient, thus first in each son
Optimal mechanical strength gradient is formed between beginning layer, and then is further increased in interconnection layer between connected medium layer and metal layer
Bond strength.
Present invention also provides a kind of interconnection layers.The interconnection layer includes the connected medium layer being set on semiconductor substrate,
The through-hole being set in connected medium layer, and the metal layer being set in through-hole, wherein connected medium layer provides for the application
Connected medium layer.Bond strength in the interconnection layer between connected medium layer and metal layer is improved, so that interconnection
The stability of layer is improved.
In above-mentioned interconnection layer, a kind of structure, such as transistor, diode, capacitor are at least formed on semiconductor substrate
Or shallow ditch groove structure etc., to form semiconductor devices area on a semiconductor substrate.Above-mentioned interconnection layer is formed in semiconductor-based
In the semiconductor devices area of material, and electrical connection is formed between semiconductor devices and peripheral circuit by metal layer.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments
It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities
The design for applying mode is fully conveyed to those of ordinary skill in the art.Further illustrate that the application provides below in conjunction with embodiment
Connected medium layer and interconnection layer production method.
Embodiment 1
The production method for present embodiments providing a kind of interconnection layer, comprising the following steps:
Using methyldiethoxysilane and oxygen as reaction gas, the first sub- initiation layer is formed on a semiconductor substrate,
The flow of middle methyldiethoxysilane is 0.3mg/min, and the flow of oxygen is 150sccm, and the time of reaction is 3s, is formed
The first initiation layer in the content of oxygen element be 34wt%, the content of carbon is 40wt%, is formed by the first sub- initiation layer
With a thickness of 15nm；
Using methyldiethoxysilane and oxygen as reaction gas, the second sub- initiation layer is formed on the first sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 0.7mg/min, and the flow of oxygen is 50sccm, and the time of reaction is 3s, institute's shape
At the second sub- initiation layer in the content of oxygen element be 26wt%, the content of carbon is 45wt%, and it is initial to be formed by the second son
Layer with a thickness of 20nm；
Using methyldiethoxysilane and oxygen as reaction gas, base layer is formed on the second sub- initiation layer to be formed mutually
Even dielectric layer, wherein the flow of methyldiethoxysilane is 4.0mg/min, and the flow of oxygen is 500sccm, the time of reaction
For 10s, be formed by base layer with a thickness of 125nm；
It etches connected medium layer and forms through-hole, and form Cu layers in through-holes.
Embodiment 2
The production method for present embodiments providing a kind of interconnection layer, comprising the following steps:
Using methyldiethoxysilane and oxygen as reaction gas, the first sub- initiation layer is formed on a semiconductor substrate,
The flow of middle methyldiethoxysilane is 0.5mg/min, and the flow of oxygen is 300sccm, and the time of reaction is 1s, is formed
The first initiation layer in the content of oxygen element be 40wt%, the content of carbon is 44wt%, is formed by the first sub- initiation layer
With a thickness of 10nm；
Using methyldiethoxysilane and oxygen as reaction gas, the second sub- initiation layer is formed on the first sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 1.0mg/min, and the flow of oxygen is 100sccm, and the time of reaction is 1s, institute's shape
At the second sub- initiation layer in the content of oxygen element be 32wt%, the content of carbon is 50wt%, and it is initial to be formed by the first son
Layer with a thickness of 12nm；
Using methyldiethoxysilane and oxygen as reaction gas, the sub- initiation layer of third is formed on the second sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 1.5mg/min, and the flow of oxygen is 0, and the time of reaction is 5s, wherein oxygen element
Content be 20wt%~24wt%, the content of carbon is 50wt%~54wt%, be formed by the sub- initiation layer of third with a thickness of
20nm；
Using methyldiethoxysilane and oxygen as reaction gas, base layer is formed on the sub- initiation layer of third to be formed mutually
Even dielectric layer, wherein the flow of methyldiethoxysilane is 5.0mg/min, and the flow of oxygen is 600sccm, the time of reaction
For 15s, be formed by base layer with a thickness of 420nm；
It etches connected medium layer and forms through-hole, and form Cu layers in through-holes.
Embodiment 3
The production method for present embodiments providing a kind of interconnection layer, comprising the following steps:
Using methyldiethoxysilane and oxygen as reaction gas, the first sub- initiation layer is formed on a semiconductor substrate,
The flow of middle methyldiethoxysilane is 0.4mg/min, and the flow of oxygen is 200sccm, and the time of reaction is 2s, is formed
The first initiation layer in the content of oxygen element be 38wt%, the content of carbon is 42wt%, is formed by the first sub- initiation layer
With a thickness of 14nm；
Using methyldiethoxysilane and oxygen as reaction gas, the second sub- initiation layer is formed on the first sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 0.8mg/min, and the flow of oxygen is 80sccm, and the time of reaction is 2s, institute's shape
At the second sub- initiation layer in the content of oxygen element be 30wt%, the content of carbon is 48wt%, and it is initial to be formed by the first son
Layer with a thickness of 16nm；
Using methyldiethoxysilane and oxygen as reaction gas, the sub- initiation layer of third is formed on the second sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 1.4mg/min, and the flow of oxygen is 5sccm, and the time of reaction is 10s, wherein
The content of oxygen element is 22wt%, and the content of carbon is 52wt%, be formed by the sub- initiation layer of third with a thickness of 20nm；
Using methyldiethoxysilane and oxygen as reaction gas, base layer is formed on the sub- initiation layer of third to be formed mutually
Even dielectric layer, wherein the flow of methyldiethoxysilane is 5.0mg/min, and the flow of oxygen is 600sccm, the time of reaction
For 15s, be formed by base layer with a thickness of 410nm；
It etches connected medium layer and forms through-hole, and form Cu layers in through-holes.
Embodiment 4
The production method for present embodiments providing a kind of interconnection layer, comprising the following steps:
Using methyldiethoxysilane and oxygen as reaction gas, the first sub- initiation layer is formed on a semiconductor substrate,
The flow of middle methyldiethoxysilane is 0.6mg/min, and the flow of oxygen is 320sccm, and the time of reaction is 4s, is formed
The first initiation layer in the content of oxygen element be 41wt%, the content of carbon is 45wt%, is formed by the first sub- initiation layer
With a thickness of 20nm；
Using methyldiethoxysilane and oxygen as reaction gas, the second sub- initiation layer is formed on the first sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 1.2mg/min, and the flow of oxygen is 110sccm, and the time of reaction is 4s, institute's shape
At the second sub- initiation layer in the content of oxygen element be 34wt%, the content of carbon is 51wt%, and it is initial to be formed by the first son
Layer with a thickness of 22nm；
Using methyldiethoxysilane and oxygen as reaction gas, the sub- initiation layer of third is formed on the second sub- initiation layer,
Wherein the flow of methyldiethoxysilane is 1.6mg/min, and the flow of oxygen is 12sccm, and the time of reaction is 4s, wherein
The content of oxygen element is 20wt%~24wt%, and the content of carbon is 50wt%~54wt%, is formed by the sub- initiation layer of third
With a thickness of 24nm；
Using methyldiethoxysilane and oxygen as reaction gas, base layer is formed on the sub- initiation layer of third to be formed mutually
Even dielectric layer, wherein the flow of methyldiethoxysilane is 6.0mg/min, and the flow of oxygen is 700sccm, the time of reaction
For 18s, be formed by base layer with a thickness of 500nm；
It etches connected medium layer and forms through-hole, and form Cu layers in through-holes.
Comparative example 1
This comparative example provides a kind of production method of interconnection layer, comprising the following steps:
Using methyldiethoxysilane and oxygen as reaction gas, initiation layer is formed on a semiconductor substrate, wherein methyl
The flow of diethoxy silane is 0.5mg/min, and the flow of oxygen is 200sccm, and the time of reaction is 10s, is formed by just
The content of oxygen element is 26wt%~32wt% in beginning layer, and the content of carbon is 45wt%~50wt%, is formed by initiation layer
With a thickness of；
Using methyldiethoxysilane and oxygen as reaction gas, base layer is formed on initiation layer to form connected medium
Layer, wherein the flow of methyldiethoxysilane is 2.0~5.0mg/min, and the flow of oxygen is 400~600sccm, reaction
Time be 10~15s, be formed by base layer with a thickness of；
It etches connected medium layer and forms through-hole, and form Cu layers in through-holes.
Test:
Using the pattern for the interconnection layer that scanning electron microscopic observation embodiment 1 to 4 and comparative example obtain.Wherein embodiment 2 to 4
The similar pattern better than interconnection layer prepared by embodiment of the pattern of prepared interconnection layer shows for the ease of comparing in Fig. 1
The pattern of interconnection layer prepared by embodiment 1, Fig. 2 shows the pattern of interconnection prepared by comparative example 1.It can be with from Fig. 1
Find out, is formed between initiation layer and base layer and be smoothly connected structure；Figure it is seen that being formed between initiation layer and base layer
Step structure.From the above analysis as can be seen that will form between initiation layer and base layer using technical solution provided by the present application
It is smoothly connected structure, to be conducive to improve the bond strength in interconnection layer between connected medium layer and metal layer.
Above-described embodiment makes connected medium layer using methyldiethoxysilane as precursor gas.It should be noted that
It is that the precursor gas of the application can also be siloxanes, such as methylsiloxane or hydride siloxane.
It can be seen from the above description that the application the above embodiments realize following technical effect: utilizing Si-O
Bond energy is greater than the characteristics of Si-C bond energy, by changing the content of each sub- initiation layer kind oxygen element and carbon, so that along far from half
The mechanical strength of each sub- initiation layer in conductor substrate direction successively reduces, thus reduce in connected medium layer initiation layer and base layer it
Between mechanical strength difference.Using this connected medium layer, when etching it and forming through-hole, in through-hole initiation layer and base layer it
Between will form and be smoothly connected structure, to improve the bond strength in interconnection layer between connected medium layer and metal layer.Meanwhile this
Application also adds the thickness of initiation layer, to increase the bonded area between initiation layer and metal layer, and then further mentions
Bond strength in high interconnection layer between connected medium layer and metal layer.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (9)
1. a kind of connected medium layer, is made of the material comprising silicon, oxygen and carbon, first on semiconductor substrate including being set in turn in
Beginning layer and base layer, which is characterized in that the initiation layer includes first by multilayer far from semiconductor substrate direction setting
Beginning layer, and the content of oxygen element successively reduces along the separate semiconductor substrate direction, each layer initiation layer, carbon
Content successively increase；The content of oxygen element successively reduces 6wt%~8wt% in each layer initiation layer, and carbon contains
Amount successively increases 4wt%~6wt%.
2. connected medium layer according to claim 1, which is characterized in that the initiation layer includes along far from the semiconductor
Base material direction setting,
First sub- initiation layer, wherein the content of oxygen element is 34wt%~40wt%, the content of carbon be 40wt%~
44wt%；
Second sub- initiation layer, wherein the content of oxygen element is 26wt%~32wt%, the content of carbon be 45wt%~
50wt%.
3. connected medium layer according to claim 2, which is characterized in that the initiation layer further includes being arranged described second
The sub- initiation layer of third of sub- initiation layer setting, the content of oxygen element is 20wt%~24wt%, carbon in the sub- initiation layer of third
The content of element is 50wt%~54wt%.
4. connected medium layer according to claim 1, which is characterized in that the initiation layer with a thickness of described matrix thickness
The 1/10~1/5 of degree.
5. connected medium layer according to claim 1, which is characterized in that each layer initiation layer with a thickness of the base
The 1/40~1/15 of the thickness of body layer.
6. a kind of production method of connected medium layer, the connected medium layer are made of the material comprising silicon, oxygen and carbon, described mutual
Even the production method of dielectric layer includes the steps that sequentially forming initiation layer and base layer on a semiconductor substrate, which is characterized in that
The step of forming the initiation layer include: by far from the semiconductor substrate direction, the content for forming oxygen element is successively reduced,
The sub- initiation layer of the multilayer that the content of carbon successively increases；In the step of forming each layer initiation layer, with by alkyl and/or
The silane or siloxanes or hydride siloxane that oxyl replaces are precursor gas, it is made to react to form each son with oxygen
Initiation layer, and by adjusting the content that the precursor gas and the ratio of oxygen form oxygen element successively reduce 6wt%~
8wt%, the content of carbon successively increase each layer initiation layer of 4wt%~6wt%.
7. production method according to claim 6, which is characterized in that the step of forming the initiation layer include:
The flow for controlling the precursor gas is 0.3~0.5mg/min, and the flow of the oxygen is 150~300sccm, described
The time of reaction is 1~3s, to form the content of oxygen element as 34wt%~40wt%, the content of carbon be 40wt%~
The sub- initiation layer of the first of 44wt%；
The flow for controlling the precursor gas is 0.7~1.0mg/min, and the flow of the oxygen is 50~100sccm, described anti-
The time answered is 1~3s, is 26wt%~32wt%, carbon to form the content of oxygen element on the described first sub- initiation layer
Content be the sub- initiation layer of 45wt%~50wt% second.
8. production method according to claim 7, which is characterized in that the step of forming the initiation layer further include:
The flow for controlling the precursor gas is 1.2~1.5mg/min, and the flow of the oxygen is less than 10sccm, the reaction
Time be 5~15s, on the described second sub- initiation layer formed oxygen element content be 20wt%~24wt%, carbon
Content be 50wt%~54wt% the sub- initiation layer of third.
9. a kind of interconnection layer is set in the connected medium layer including the connected medium layer being set on semiconductor substrate
Through-hole, and the metal layer being set in the through-hole, which is characterized in that the connected medium layer is to appoint in claim 1 to 5
Connected medium layer described in one.
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