CN104950354A - Infrared stealth thin film with selective low emissivity in waveband of 3-5 mu m and preparation method of infrared stealth thin film - Google Patents

Infrared stealth thin film with selective low emissivity in waveband of 3-5 mu m and preparation method of infrared stealth thin film Download PDF

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CN104950354A
CN104950354A CN201510362845.XA CN201510362845A CN104950354A CN 104950354 A CN104950354 A CN 104950354A CN 201510362845 A CN201510362845 A CN 201510362845A CN 104950354 A CN104950354 A CN 104950354A
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infrared stealth
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refraction
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CN104950354B (en
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李俊生
程海峰
郑文伟
彭亮
周永江
刘海韬
张朝阳
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National University of Defense Technology
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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Abstract

An infrared stealth thin film with selective low emissivity in a waveband of 3-5 mu m can regulate and control emission radiation of a spectrum, realize the low emissivity in the infrared window waveband of 3.0-5.0 mu m and realize high emissivity in other wavebands. The thin film has a multilayer film structure and is formed by alternately stacking Si material layers with high refraction index and MgF2 material layers with low refraction index. A preparation method of the infrared stealth thin film comprises steps as follows: firstly, a substrate is cleaned; the Si material layers with the high refraction index and the MgF2 material layers with the low refraction index are plated alternately on the surface of the substrate with a radio frequency magnetron sputtering method; the temperature of the substrate, the radio frequency sputtering power and the sputtering time are properly controlled during plating sputtering. The infrared stealth thin film and the preparation method of the infrared stealth thin film can effectively solve the problem about compatibility of stealth and heat dissipation caused by infrared stealth at the high temperature, and have the advantages of simple process, good repeatability, low equipment requirement and the like.

Description

Infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates and preparation method thereof
Technical field
The invention belongs to film material with function technical field, particularly relate to a kind of have spectral selectivity low-emissivity can infrared stealth film and preparation method thereof.
Background technology
In modern revolution of science and technology, stealth technology be apply more and more wider.In various stealthy means, infrared stealth is one of wherein important means, obtains increasing concern.The window wave band of infrared acquisition mainly refers to 3.0 μm ~ 5.0 μm and 8.0 μm ~ 14.0 mu m wavebands.Wherein, when environment temperature at high temperature time, 3.0 μm ~ 5.0 mu m wavebands are then main detection windows.
In infrared stealth technology, reducing infrared intensity is topmost means, and it mainly adopts at target surface coating thermal stealth coating, to reduce the method for target surface emissivity.But, according to Stefan-Boltzmann law: M=ε σ T 4, infrared intensity is subject to the impact of temperature T and emissivity ε simultaneously, and the method reducing infrared intensity by means of only reduction target surface emissivity is worth discussion.
Above-mentioned infrared stealth coating all has lower emissivity at whole infrared band, covers infrared acquisition wave band, but does not possess the feature of the low transmitting of selectivity.It is pointed out that infrared low-emissivity can affect heat conducting process, cause heat to be difficult to diffusion, make temperature increase, some target operation environment temperature itself is higher in addition, therefore can bring the problem of heat radiation.In conjunction with Stefan-Boltzmann law, the rising of temperature is the factor causing infrared intensity to increase equally, and this illustrates that traditional infrared stealth coating brings compatibling problem that is stealthy and heat radiation, is difficult to reach ideal effect.Therefore, under the high temperature conditions, the performance characteristics that desirable Infrared stealthy materials should possess is: at 3.0 μm ~ 5.0 mu m wavebands of infrared acquisition, material has lower emissivity, to reduce its detectivity; And higher in other band emission rates, heat can be spread in time, reach the requirement of heat radiation.Therefore, development has the Infrared stealthy materials that spectral selectivity is launched, and to solve the contradiction of infrared stealth and heat loss through radiation, is the key realizing infrared stealth under hot conditions.
In the current generation, researchist, for the feature of infrared stealth, has carried out the debugging to spectral selectivity emitting performance in theory.But the preparation of reality is rarely found, by not yet accomplished for the application of materials application in infrared stealth field with spectral selectivity low-launch-rate performance.
Summary of the invention
Technical matters to be solved by this invention is, overcome the compatibility issue of the stealthy and heat radiation that the infrared stealth under the high temperature conditions mentioned in above background technology brings, there is provided a kind of to there is low-launch-rate performance at 3.0 μm ~ 5.0 mu m wavebands, there is at its all band the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates of high emissivity performance, the also corresponding preparation method that the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates that a kind of technique is simple, reproducible, equipment requirement is low is provided.
For solving the problems of the technologies described above, the technical scheme that the present invention proposes is a kind of infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates, described infrared stealth film can regulate and control the emitted radiation of spectrum, realization is at the low-launch-rate of the infrared window wave band of 3.0 μm ~ 5.0 μm, its all band realizes high emissivity, to realize the infrared stealth under hot conditions; Described infrared stealth film has multi-layer film structure, primarily of high index of refraction Si material layer (H) and low-refraction MgF 2material layer (L) is alternately formed by stacking.The high low-refraction of this material system larger, the effect that selectivity is launched can be realized better compared with the material system that refractive index is smaller, high reverse--bias region can cover 3.0 μm ~ 5.0 mu m wavebands better, simultaneously under the requirement of identical selectivity transmitting, the material system Si/MgF of the ratio of high index of refraction 2required rete number is few, is convenient to preparation.In described multi-layer film structure, the thickness of each rete presents uneven distribution, and being non-uniformly distributed in Multilayer system of thickness of multilayer film produces electro-magnetic bandgap, when electromagnetic frequency falls into electro-magnetic bandgap (the present invention corresponds to the electromagnetic wave band of 3.0 μm ~ 5.0 μm), electromagnetic wave cannot continue to propagate, this makes for any wavelength X in aforementioned 3.0 μm ~ 5.0 mu m wavebands, the rete of some is all had in multi-layer film structure, its optical thickness close to λ/4, thus achieves the high reflectance at specific band.
The infrared stealth film of 3 ~ 5 above-mentioned mu m waveband selectivity low-launch-rates, preferably, the refractive index of described high index of refraction Si material layer is n h=3.20 ~ 3.43, described low-refraction MgF 2the refractive index of material layer is n l=1.35 ~ 1.39.
The infrared stealth film of 3 ~ 5 above-mentioned mu m waveband selectivity low-launch-rates, preferably, described infrared stealth thin film has the multi-layer film structure of odd-level, and the number of plies of multi-layer film structure is no less than 7 layers.Preferred, described infrared stealth film has the multi-layer film structure amounting to 7 layers, and from innermost layer to outermost layer, adopt high index of refraction Si material layer and low-refraction MgF successively 2material layer replaces arrangement, and innermost layer and outermost layer all adopt high index of refraction Si material layer.Preferred, in the multi-layer film structure of aforementioned 7 layers, be followed successively by 230.0 ± 10.0nm, 500.0 ± 10.0nm, 230.0 ± 10.0nm, 760.0 ± 10.0nm, 410.0 ± 10.0nm, 120.0 ± 10.0nm, 200.0 ± 10.0nm from described innermost layer to outermost each layer thickness.
After optimal design, each thicknesses of layers design of the multi-layer film structure of above-mentioned 7 layers is as shown in table 1 below:
Table 1: the film layer structure of optimal design
The infrared stealth film of 3 ~ 5 above-mentioned mu m waveband selectivity low-launch-rates, preferably, described infrared stealth film utilizes magnetron sputtering technique to prepare.
The infrared stealth film of 3 ~ 5 above-mentioned mu m waveband selectivity low-launch-rates, preferably, 5.0 μm ~ 8.0 mu m wavebands that its all band described refers to.Preferred, described infrared stealth film is less than 0.1 (preferably about 0.07) in the emissivity of 3.0 μm ~ 5.0 μm of infrared window wave bands, and described infrared stealth film reaches more than 0.5 (preferably about 0.55) in the emissivity of the non-infrared window wave band of 5.0 μm ~ 8.0 μm.
As a total technical conceive, the present invention also provides a kind of preparation method of infrared stealth film of 3 ~ 5 above-mentioned mu m waveband selectivity low-launch-rates, comprises the following steps:
(1) cleaning of substrate: first use washed with de-ionized water substrate surface foreign material, clean in ultrasonic washing instrument (being generally no less than 10.0min) by soaked in absolute ethyl alcohol again, finally air-dry (the various air-dry mode such as available hair dryer), substrate is fixed on sample stage; Backing material used is preferably sapphire;
(2) method of rf magnetron sputtering is adopted alternately to plate high index of refraction Si material layer and low-refraction MgF at substrate surface 2material layer;
The sputtering condition of sputtering plating high index of refraction Si material layer comprises: underlayer temperature is 300.0 DEG C ~ 400.0 DEG C, and radio-frequency sputtering power is 100.0W ~ 200.0W, and sputtering time is 10.0min ~ 25.0min;
Sputtering plating low-refraction MgF 2the sputtering condition of material layer comprises: underlayer temperature is 50.0 DEG C ~ 100.0 DEG C, and radio-frequency sputtering power is 50.0W ~ 100.0W, and sputtering time is 5.0min ~ 30.0min.
In above-mentioned preparation method of the present invention, the equipment for sputter coating is magnetron sputtering coater.
For the performance characteristics of the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates of the present invention, the present invention proposes a kind of be preferably substrate with sapphire, with Si layer and MgF 2layer alternately superposes the technical scheme of the multi-layer film structure of composition.It needs to be noted: according to Kirchhoff's law, the transmitance (T) of material, reflectivity (R) and emissivity (ε) have following relation:
T+R+ε＝1；
And owing to have employed the multi-layer film structure being no less than 7 layers in the above-mentioned preferred technical scheme of the present invention, contained rete is more, this makes the transmitance of infrared stealth film be close to 0; Therefore, the relation of reflectivity (R) and emissivity (ε) can approximate representation be R+ ε ≈ 1, namely can represent with high reflectance at the low-launch-rate of some wave band.
Based on above know-why, technique scheme of the present invention mainly follows following technical thought:
(1) when light vertical incidence, the ratio n of high low-refraction h/ n ltime larger, reflectivity is then higher, and emissivity is corresponding lower.High index of refraction Si material layer selected in the present invention and low-refraction MgF 2material layer is the material after our optimal screening, and the ratio of the two refractive index is comparatively large in alternate material, and this is conducive to the effect realizing the transmitting of comparatively ideal selectivity; Meanwhile, the ratio of the refractive index of material is larger, under the requirement that same selectivity is launched, and Si/MgF 2the rete number of the multilayer film needed for material system is fewer, is convenient to preparation.In addition bi-material is as the window material of infrared fluctuation, and this is combined in the aspect function admirables such as thermal shock resistance, thermal stability, thermal matching, and interface cohesion is stablized, and expands without obvious stress.
(2) in order to ensure all there is low emissivity, i.e. high reflectance at 3.0 μm ~ 5.0 mu m wavebands.The thickness of rete successive layers can be made uneven, its object is to guarantee any wavelength X in aforementioned wave band, in multi-layer film structure, have the rete of some, its optical thickness close to λ/4, to obtain for the high reflectance under wavelength X.Simultaneously according to electromagnetism through theory, being non-uniformly distributed in Multilayer system of multilayer film produces electro-magnetic bandgap, when electromagnetic frequency falls into electro-magnetic bandgap (the present invention corresponds to the electromagnetic wave band of 3.0 μm ~ 5.0 μm), electromagnetic wave cannot continue to propagate, thus achieves the high reflectance at specific band.
(3) film structure typically with optical electivity reflection is combined by high and low refractive index material adapted, and the most both sides rete of rete is all designed to high refractive index material layer under preferable case, what centre replaced contains high refractive index material layer and low refractive index material layer, so that the highest reflectivity (minimum emissivity) under obtaining peer layer said conditions.Therefore, in the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates stated on the invention, be high index of refraction Si material layer near the innermost layer of Sapphire Substrate and outermost layer.
Compared with prior art, the invention has the advantages that:
1. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates of the present invention adopts multi-layer film structure, and rete is by high index of refraction Si material layer and low-refraction MgF 2material layer is alternately formed by stacking; The two is the window material of infrared band, and during composition multilayer film, better, residual thermal stress is less for heat coupling, and each interface layer adhesion is strong, rete difficult drop-off.
2. under the high temperature conditions, the high index of refraction Si material layer selected of the present invention and low-refraction MgF 2material layer bi-material all has good thermal stability, physical strength and chemical stability.
3. the infrared stealth film of 3.0 ~ 5.0 mu m waveband selectivity low-launch-rates proposed by the invention, after optimal design, be only about 0.07 in the emissivity of 3.0 μm ~ 5.0 μm of infrared window wave bands, then reach about 0.55 the non-window band emission rate of 5.0 μm ~ 8.0 μm.
On the whole, the infrared stealth film with spectral selectivity low-launch-rate performance of the present invention, by coatings optimization design, achieves the performance that spectral selectivity is launched preferably.Just to have made this selectivity low-launch-rate infrared stealth film take into account stealthy and the requirement of heat loss through radiation for this, significant to the infrared stealth realized better under hot conditions.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of 3.0 μm ~ 5.0 mu m waveband selectivity low-launch-rate infrared stealth films in the embodiment of the present invention 1; Wherein white stripes part represents high index of refraction Si material layer (H), and blackstreak part represents low-refraction MgF 2material layer (L).
Fig. 2 is the emissivity spectrogram of 3.0 μm ~ 5.0 mu m waveband selectivity low-launch-rate infrared stealth films in the embodiment of the present invention 1.
Embodiment
For the ease of understanding the present invention, hereafter will do to describe more comprehensively, meticulously to the present invention in conjunction with Figure of description and preferred embodiment, but protection scope of the present invention is not limited to following specific embodiment.
Unless otherwise defined, hereinafter used all technical terms are identical with the implication that those skilled in the art understand usually.The object of technical term used herein just in order to describe specific embodiment is not be intended to limit the scope of the invention.
Unless otherwise specified, the various starting material, instrument and equipment etc. used in the present invention are all bought by market and are obtained or prepare by existing method.
Embodiment 1:
A kind of infrared stealth film of 3.0 μm ~ 5.0 mu m waveband selectivity low-launch-rates of the present invention as shown in Figure 1, this infrared stealth film can regulate and control the emitted radiation of spectrum, realization, at the low-launch-rate of the infrared window wave band of 3.0 μm ~ 5.0 μm, realizes high emissivity at 5.0 μm ~ 8.0 mu m wavebands.
The infrared stealth film of the present embodiment has the multi-layer film structure amounting to 7 layers, and it is primarily of high index of refraction Si material layer and low-refraction MgF 2material layer is alternately formed by stacking, and adopts high index of refraction Si material layer and low-refraction MgF from the innermost layer near substrate successively to outermost layer 2material layer replaces arrangement, and innermost layer and outermost layer all adopt high index of refraction Si material layer.In the infrared stealth film of the present embodiment, the refractive index of high index of refraction Si material layer is n h=3.20 ~ 3.43, low-refraction MgF 2the refractive index of material layer is n l=1.35 ~ 1.39.The substrate of this infrared stealth film is sapphire.
In the infrared stealth film of the present embodiment, be followed successively by 230.0nm (high index of refraction Si material first subgrade), 500.0nm (low-refraction MgF from innermost layer to outermost each layer thickness 2material first subgrade), 230.0nm (high index of refraction Si material second subgrade), 760.0nm (low-refraction MgF 2material second subgrade), 410.0nm (high index of refraction Si material the 3rd subgrade), 120.0nm (low-refraction MgF 2material the 3rd subgrade), 200.0nm (high index of refraction Si material the 4th subgrade).
The above-mentioned infrared stealth film of the present embodiment utilizes magnetron sputtering technique to prepare, and specifically comprises the following steps:
(1) cleaning of substrate: the present embodiment backing material used is sapphire, needs before sputtering to clean substrate used.First use washed with de-ionized water surface irregularities, then in ultrasonic washing instrument, clean 10.0min by soaked in absolute ethyl alcohol, then with hair dryer, surface is dried up, Sapphire Substrate is placed on sample stage and fixes.
(2) adopt the method for rf magnetron sputtering at sapphire substrate surface plating ground floor high index of refraction Si material layer; The sputtering condition of high index of refraction Si material layer is as follows: underlayer temperature is 300.0 DEG C, and radio-frequency sputtering power is 120.0W, and sputtering time is 12.0min.
(3) adopt the method for rf magnetron sputtering on high index of refraction Si material layer, plate second layer low-refraction MgF 2material layer; Low-refraction MgF 2the sputtering condition of material layer is as follows: underlayer temperature is 100.0 DEG C, and radio-frequency sputtering power is 100.0W, and sputtering time is 20.0min.
(4) above-mentioned steps (2) is repeated.
(5) repeat above-mentioned steps (3), other technological measures and condition are all identical with step (3), and only sputtering time is adjusted to 30.0min.
(6) repeat above-mentioned steps (2), other technological measures and condition are all identical with step (2), and only sputtering time is adjusted to 22.0min.
(7) repeat above-mentioned steps (3), other technological measures and condition are all identical with step (3), and only sputtering time is adjusted to 5.0min.
(8) repeat above-mentioned steps (2), other technological measures and condition are all identical with step (2), and only sputtering time is adjusted to 10.0min.
The infrared emittance spectrogram of the infrared stealth film finally prepared after above-mentioned steps as shown in Figure 2, as seen from Figure 2, be only about 0.07 the infrared window band emission rate of 3.0 μm ~ 5.0 μm, reach 0.55 at the mean value of the non-window band emission rate of 5.0 μm ~ 8.0 μm.
Embodiment 2:
A kind of infrared stealth film of 3.0 μm ~ 5.0 mu m waveband selectivity low-launch-rates of the present invention, this infrared stealth film can regulate and control the emitted radiation of spectrum, realization, at the low-launch-rate of the infrared window wave band of 3.0 μm ~ 5.0 μm, realizes high emissivity at 5.0 μm ~ 8.0 mu m wavebands.
The infrared stealth film of the present embodiment has the multi-layer film structure amounting to 7 layers, and it is primarily of high index of refraction Si material layer and low-refraction MgF 2material layer is alternately formed by stacking, and adopts high index of refraction Si material layer and low-refraction MgF from the innermost layer near substrate successively to outermost layer 2material layer replaces arrangement, and innermost layer and outermost layer all adopt high index of refraction Si material layer.In the infrared stealth film of the present embodiment, the refractive index of high index of refraction Si material layer is n h=3.20 ~ 3.43, low-refraction MgF 2the refractive index of material layer is n l=1.35 ~ 1.39.The substrate of this infrared stealth film is sapphire.
In the infrared stealth film of the present embodiment, be followed successively by 240.0nm (high index of refraction Si material first subgrade), 510.0nm (low-refraction MgF from innermost layer to outermost each layer thickness 2material first subgrade), 240.0nm (high index of refraction Si material second subgrade), 750.0nm (low-refraction MgF 2material second subgrade), 400.0nm (high index of refraction Si material the 3rd subgrade), 130.0nm (low-refraction MgF 2material the 3rd subgrade), 210.0nm (high index of refraction Si material the 4th subgrade).
The above-mentioned infrared stealth film of the present embodiment utilizes magnetron sputtering technique to prepare, and specifically comprises the following steps:
(1) cleaning of substrate: the present embodiment backing material used is sapphire, needs before sputtering to clean substrate used.First use washed with de-ionized water surface irregularities, then in ultrasonic washing instrument, clean 10.0min by soaked in absolute ethyl alcohol, then with hair dryer, surface is dried up, Sapphire Substrate is placed on sample stage and fixes.
(2) adopt the method for rf magnetron sputtering at sapphire substrate surface plating ground floor high index of refraction Si material layer; The sputtering condition of high index of refraction Si material layer is as follows: underlayer temperature is 300.0 DEG C, and radio-frequency sputtering power is 120.0W, and sputtering time is 13.0min.
(3) adopt the method for rf magnetron sputtering on high index of refraction Si material layer, plate second layer low-refraction MgF 2material layer; Low-refraction MgF 2the sputtering condition of material layer is as follows: underlayer temperature is 100.0 DEG C, and radio-frequency sputtering power is 100.0W, and sputtering time is 21.0min.
(4) above-mentioned steps (2) is repeated.
(5) repeat above-mentioned steps (3), other technological measures and condition are all identical with step (3), and only sputtering time is adjusted to 28.0min.
(6) repeat above-mentioned steps (2), other technological measures and condition are all identical with step (2), and only sputtering time is adjusted to 20.0min.
(7) repeat above-mentioned steps (3), other technological measures and condition are all identical with step (3), and only sputtering time is adjusted to 6.0min.
(8) repeat above-mentioned steps (2), other technological measures and condition are all identical with step (2), and only sputtering time is adjusted to 12.0min.
The infrared emittance spectrogram of the infrared stealth film finally prepared from above-mentioned steps, be only less than 0.1 the infrared window band emission rate of 3.0 μm ~ 5.0 μm, reach more than 0.5 at the mean value of the non-window band emission rate of 5.0 μm ~ 8.0 μm.

Claims (10)

1. the infrared stealth film of a mu m waveband selectivity low-launch-rate, it is characterized in that, described infrared stealth film can regulate and control the emitted radiation of spectrum, and realize the low-launch-rate at the infrared window wave band of 3.0 μm ~ 5.0 μm, its all band realizes high emissivity; Described infrared stealth film has multi-layer film structure, primarily of high index of refraction Si material layer and low-refraction MgF 2material layer is alternately formed by stacking.
2. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to claim 1, is characterized in that, the refractive index of described high index of refraction Si material layer is n h=3.20 ~ 3.43, described low-refraction MgF 2the refractive index of material layer is n l=1.35 ~ 1.39.
3. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to claim 1, it is characterized in that, described infrared stealth thin film has the multi-layer film structure of odd-level, and the number of plies of multi-layer film structure is no less than 7 layers.
4. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to claim 3, it is characterized in that, described infrared stealth film has the multi-layer film structure amounting to 7 layers, and from innermost layer to outermost layer, adopt high index of refraction Si material layer and low-refraction MgF successively 2material layer replaces arrangement, and innermost layer and outermost layer all adopt high index of refraction Si material layer.
5. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to claim 4, it is characterized in that, be followed successively by 230.0 ± 10.0nm, 500.0 ± 10.0nm, 230.0 ± 10.0nm, 760.0 ± 10.0nm, 410.0 ± 10.0nm, 120.0 ± 10.0nm, 200.0 ± 10.0nm from described innermost layer to outermost each layer thickness.
6. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to any one of Claims 1 to 5, it is characterized in that, described infrared stealth film utilizes magnetron sputtering technique to prepare.
7. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to any one of Claims 1 to 5, is characterized in that, 5.0 μm ~ 8.0 mu m wavebands that its all band described refers to.
8. the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to claim 7, it is characterized in that, described infrared stealth film is less than 0.1 in the emissivity of 3.0 μm ~ 5.0 μm of infrared window wave bands, and described infrared stealth film reaches more than 0.5 in the emissivity of the non-infrared window wave band of 5.0 μm ~ 8.0 μm.
9. a preparation method for the infrared stealth film of 3 ~ 5 mu m waveband selectivity low-launch-rates according to any one of claim 1 ~ 8, comprises the following steps:
(1) cleaning of substrate: first use washed with de-ionized water substrate surface foreign material, then clean in ultrasonic washing instrument by soaked in absolute ethyl alcohol, finally air-dry, substrate is fixed;
(2) method of rf magnetron sputtering is adopted alternately to plate high index of refraction Si material layer and low-refraction MgF at substrate surface 2material layer;
The sputtering condition of sputtering plating high index of refraction Si material layer comprises: underlayer temperature is 300.0 DEG C ~ 400.0 DEG C, and radio-frequency sputtering power is 100.0W ~ 200.0W, and sputtering time is 10.0min ~ 25.0min;
Sputtering plating low-refraction MgF 2the sputtering condition of material layer comprises: underlayer temperature is 50.0 DEG C ~ 100.0 DEG C, and radio-frequency sputtering power is 50.0W ~ 100.0W, and sputtering time is 5.0min ~ 30.0min.
10. preparation method according to claim 9, is characterized in that: described substrate is Sapphire Substrate.
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CN112111720A (en) * 2020-09-22 2020-12-22 南京信息工程大学 Laser, infrared and microwave compatible stealth material and preparation method and application thereof
CN112859216A (en) * 2021-01-14 2021-05-28 北京科技大学 Multilayer thin film structure with significant directionally selective emissivity
CN114987004A (en) * 2022-05-16 2022-09-02 中国人民解放军国防科技大学 Gas-induced-change infrared emissivity device and preparation method and application thereof

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CN112111720B (en) * 2020-09-22 2022-11-29 南京信息工程大学 Laser, infrared and microwave compatible stealth material and preparation method and application thereof
CN112859216A (en) * 2021-01-14 2021-05-28 北京科技大学 Multilayer thin film structure with significant directionally selective emissivity
CN112859216B (en) * 2021-01-14 2021-11-30 北京科技大学 Multilayer thin film structure with significant directionally selective emissivity
CN114987004A (en) * 2022-05-16 2022-09-02 中国人民解放军国防科技大学 Gas-induced-change infrared emissivity device and preparation method and application thereof

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