CN104950231A - Cable insulation partial discharge defect and insulation state voltage resistance testing method and device - Google Patents

Cable insulation partial discharge defect and insulation state voltage resistance testing method and device Download PDF

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CN104950231A
CN104950231A CN201510288191.0A CN201510288191A CN104950231A CN 104950231 A CN104950231 A CN 104950231A CN 201510288191 A CN201510288191 A CN 201510288191A CN 104950231 A CN104950231 A CN 104950231A
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cable
voltage
insulation
waveform
resistance
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CN104950231B (en
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李婧
黄锋
郭金明
唐捷
陈智勇
邓雨荣
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Electric Power Research Institute of Guangxi Power Grid Co Ltd
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Electric Power Research Institute of Guangxi Power Grid Co Ltd
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Abstract

The invention provides a cable insulation partial discharge defect and insulation state voltage resistance testing method and device. The method includes: applying periodic-variation exponential waveform voltage to a to-be-tested cable; exciting the partial discharge signals of the to-be-tested cable at the exponential wave falling edge or rising edge; collecting and recording the partial discharge signals, and analyzing the partial discharge features of partial discharge defects. The voltage resistance testing of the method includes: increasing the level of the applied voltage until the highest allowed applied voltage of the to-be-tested cable is reached or breakdown or potential breakdown risk is discovered during voltage rising, and recording the highest voltage; repeating the voltage resistance testing with the growing of cable service life, and recording the voltage resistance change trend and data dispersity along with the cable service life growing. The cable insulation partial discharge defect and insulation state voltage resistance testing method and device has the advantages that equipment is small in size and light; the charge accumulation effect is avoided; damage to the cable is small; exciting voltage level is adjustable; the partial discharge information of a sample can be directly collected to perform partial discharge positioning and mode identification.

Description

Cable insulation shelf depreciation defect and state of insulation resistance test method and device
Technical field
The present invention relates to a kind of Electric Power Equipment Insulation shelf depreciation defect and state of insulation resistance test method and device, particularly relate to one and be applicable to power cable insulation shelf depreciation defect and state of insulation resistance test method and device.
Background technology
In recent years, in order to improve urban environment, ensure the safe and reliable operation of electrical network, distribution cable just progressively substitutes traditional pole line, is more and more widely used in distribution network construction.But adopt underground power cable in a large number along with the technical progress of industry of China's cables manufacturing in recent years and city transmission and distribution network, because power cable body insulation manufacturing defect, cable and annex construction and installation mass defect and cable accessory workmanship defect cause the phenomenon of cable line operation troubles day by day serious.Because cable is embedded in underground, once break down, very difficult, the consuming time length of its troubleshooting, affects the normal operation of electrical network, cause larger economic loss, inconvenience is caused to the running as usual of the daily life of resident, the daily production of production division and other social nonproductive departments.
There has been a large amount of different types of cable insulation state inspection both at home and abroad.Compare and can find out, the advantage that Ultra-low Frenquency Voltage detection technique has other several detection techniques not have, on the basis ensureing testing apparatus lightweight and portable in volume, the local discharge signal of cable test product can be inspired fully, therefore, ultralow frequency detection technique more has very large advantage on cable water branch ageing management.The ultralow frequency test guidance that can provide according to U.S.'s Electrical Motor, the voltage waveform being applicable to the detection of distribution cable ultralow frequency has four kinds: cosine square wave, sinusoidal wave, bipolarity square wave, the direct current step ripple of other positive-negative polarities change of modulation.Ultralow frequency sine wave produces or needs the process of modulation and demodulation, requires higher to filter function, or uses electric rotating machine, bulky, underaction; And the control strategy of cosine square wave production process breaker in middle is complicated, the moment is needed to judge capacitive peak.Square wave is similar to DC voltage withstand test, has only been many 5s commutation process once, cannot the normal operating conditions of good equivalent cable, and the direct current step ripple of modulation needs more complicated industrial digital control technology.
Summary of the invention
It is simple that the technical problem to be solved in the present invention is to provide a kind of control structure, the cable insulation shelf depreciation defect less to cable fault and state of insulation resistance test method and device.
The technical solution used in the present invention is as follows: a kind of cable insulation method for diagnosing status, and concrete grammar is: the exponential waveform voltage applying mechanical periodicity on detected cable; Pass through described exponential wave high voltage at exponential wave negative edge or rising edge, encourage the local discharge signal of described detected insulated cable; Acquisition and recording is carried out to local discharge signal, analyzes the local discharge characteristic parameter of shelf depreciation defect;
The waveform of the exponential waveform voltage of described mechanical periodicity meets following formula:
U 0 = V in ( 1 - e - α ( t - t 0 ) ) , t 0 ≤ t ≤ t 1 ; V in e - α ( t - t 1 ) , t 1 ≤ t ≤ t 2 ; V in ( 1 - e - α ( t - t 2 ) ) , t 2 ≤ t ≤ t 3 ; V in e - α ( t - t 3 ) . t 3 ≤ t ≤ t 4 ;
Wherein, U 0for the waveform of the exponential waveform voltage of described mechanical periodicity; V infor the voltage magnitude preset; α is exponential waveform attenuation parameter, and its value is determined by exponential waveform driving source setup parameter and detected electric cable capacitance capacitance and insulation resistance parameter; t 0~ t 4constant duration distribution successively;
Described method also comprises resistance test: improve and apply electric pressure, applies to find punch-through or the potential risk that punctures in magnitude of voltage or pressure process, and record this maximum voltage value until reach the highest permission of detected cable; Repeat this resistance test along with cable life increases, record along with cable life increases the withstand voltage variation tendency and data scatter occurred.
As preferably, described method also comprises: according to shelf depreciation defects detection result and resistance test result, utilizes and identifies that the cable insulation state of simulation to detected insulated cable is assessed.
As preferably, described local discharge characteristic parameter comprises the amplitude of partial discharge pulse, phase place and repetition rate parameter.
As preferably, the concrete grammar analyzing the local discharge characteristic parameter of shelf depreciation defect is: extract excitation voltage waveform negative edge part, record start and end time, between these moment, partial discharge pulse's collection terminal gathers the sparking voltage pulse signal that a series of amplitude does not wait, the threshold value progressively improved is set, each by the elimination of pulse below threshold value, again with set time window editing pulse sequence, the coupling of incident pulse and reflected impulse is carried out according to known velocity of wave and detected insulated cable length, and then the distance of Partial Discharge Sources distance samples end is calculated according to the mistiming that pairing pulse is shown in, position, simultaneously to the amplitude of incident pulse and and the phase relation of excitation voltage waveform carry out record, final acquisition is detected local discharge characteristic spectrogram and the location spectrogram of insulated cable.
A kind of cable insulation shelf depreciation defect and state of insulation overpressure resistance detecting device, is characterized in that, comprise;
Exponential waveform voltage drive source, for generation of the exponential waveform voltage of mechanical periodicity, and is applied on detected insulated cable;
Shelf depreciation defect acquisition module, and is coupled collecting unit on the contrary, at negative edge or the rising edge of exponential wave, gathers the local discharge signal of described detected insulated cable;
Local discharge characteristic Parameter analysis module, by the local discharge signal gathered, analyzes the local discharge characteristic parameter of shelf depreciation defect;
As preferably, also comprise Condition assessment of insulation module, according to shelf depreciation defects detection result and resistance test result, utilize and identify that the cable insulation state of simulation to detected insulated cable is assessed.
As preferably, described exponential waveform voltage drive source comprises AC transformer, semiconductor switch module, waveform adapt to module and Master Control Unit; Two input ends of described AC transformer are connected with AC power by primary side shearing device; Two output terminals of described transformer, one end is connected with semiconductor switch module by protective resistance, other end ground connection; Described semiconductor switch module adapts to module by high voltage silicon rectifier stack and waveform and is connected; Described semiconductor switch module comprises the first semiconductor switch module and the second semiconductor switch module; Described first semiconductor switch module only works in positive charge loop and back discharge loop; Described second semiconductor switch module only works in forward discharge loop and reverse charging loop; Described waveform adapts to module and comprises, the first input end be connected with high voltage silicon rectifier stack and the second input end be connected with another output terminal of AC transformer; Described waveform adapts to module and also comprises the first output terminal be connected with detected insulated cable core and the second output terminal be extremely connected with detected insulated cable ground wire; Described Master Control Unit and control shearing device is connected, and cuts off the electricity supply at discharge regime, the transformer of short circuit simultaneously primary side; Described Master Control Unit is connected with the first and second semiconductor switch modules, regulates the frequency of the exponential voltage put on detected insulated cable; Described Master Control Unit and waveform adapt to module and are connected, and regulate the waveform shape of the exponential voltage put on detected insulated cable;
The output voltage of described AC transformer is 0 to 30kV.
As preferably, described first or second semiconductor switch module comprises the electron electric power switch of more than 10 IGBT switch element cascaded structures, and each IGBT switch element structure comprises the isolating transformer, IGBT drive circuit, IGTB chip and the buffering protection circuit that are connected successively; Master Control Unit is connected with IGBT drive circuit.
As preferably, described waveform adapts to module and comprises the isolation capacitance be connected between two input ends or two output terminals; Also comprise series connection and the plural IGBT module between first input end and the first output terminal; Described IGBT module comprises the first igbt transistor and the second igbt transistor two igbt transistors and a parameter regulating resistance; The emitter of described first igbt transistor is connected to parameter regulating resistance one end, and collector is connected to the other end of parameter resistance; The collector of described second igbt transistor is connected to described parameter regulating resistance one end, and emitter is connected to the other end of described parameter resistance; Master Control Unit is connected with the gate pole of all igbt transistors, controls cut-offfing of each igbt transistor.
As preferably, described shelf depreciation defect acquisition module comprises coupling capacitance and repeating resistance, also comprises the overvoltage protection diode in parallel with described repeating resistance; One end of described coupling capacitance is connected with the core of detected insulated cable, and the other end is connected with one end of repeating resistance; The other end ground connection of described repeating resistance.
Compared with prior art, the invention has the beneficial effects as follows: 1, adopt exponential waveform voltage drive, checkout equipment volume is little, lighter; Driving source equipment volume is little, and the functional unit quantity that test loop comprises is few, can also reduced volume further by the electronic power switch of structure reasonable in design, reduces weight; 2, there is voltage commutation in exponential waveform alternating voltage, there is not charge accumulation effects; 3, exponential wave voltage commutation process is slower than cosine square wave, faster than sine wave, is a kind of detection voltage less to cable fault; 4, can there is adaptations with detected insulated cable difference in excitation sources waveform shape, and driving voltage grade is adjustable, fully, comprehensively can carry out Condition assessment of insulation to test product cable, has important engineering practical value; The shelf depreciation information that 5, directly can gather test product carries out partial discharge location and pattern-recognition.
Accompanying drawing explanation
Fig. 1 be the present invention wherein one embodiment adopt exponential waveform shape schematic diagram.
Fig. 2 is the exponential waveform voltage drive source structure schematic diagram of the present invention's wherein embodiment.
Fig. 3 is the semiconductor switch module structural representation of the present invention's wherein embodiment.
Fig. 4 is that the waveform of the present invention's wherein embodiment adapts to modular structure schematic diagram.
Fig. 5 be the present invention wherein an embodiment shelf depreciation defect acquisition module structural drawing signal.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Arbitrary feature disclosed in this instructions (comprise summary and accompanying drawing), unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.
A kind of insulated local discharge defect and state of insulation resistance test method, concrete grammar is: the exponential waveform voltage applying mechanical periodicity on detected cable; In this specific embodiment, at exponential wave negative edge by waveform voltage, encourage the shelf depreciation flaw indication of described detected insulated cable; Acquisition and recording is carried out to local discharge defect signal, analyzes the local discharge characteristic parameter of shelf depreciation defect;
As shown in Figure 1, the waveform of the exponential waveform voltage of described mechanical periodicity meets following formula:
U 0 = V in ( 1 - e - α ( t - t 0 ) ) , t 0 ≤ t ≤ t 1 ; V in e - α ( t - t 1 ) , t 1 ≤ t ≤ t 2 ; V in ( 1 - e - α ( t - t 2 ) ) , t 2 ≤ t ≤ t 3 ; V in e - α ( t - t 3 ) . t 3 ≤ t ≤ t 4 ;
Wherein, U 0for the waveform of the exponential waveform voltage of described mechanical periodicity; V infor the voltage magnitude preset; α is exponential waveform attenuation parameter, its value by exponential waveform driving source (as shown in Figure 4, in this specific embodiment, by the switch selectivity action of igbt transistor, the resistance importing exponential waveform voltage drive source into is changed, reaches amendment α value and then regulate the object putting on detected insulated cable two ends exponential wave voltage waveform.) setup parameter and detected electric cable capacitance capacitance and insulation resistance parameter determine; t 0~ t 4constant duration distribution successively.
Described method also comprises resistance test: improve and apply electric pressure, applies to find punch-through or the potential risk that punctures in magnitude of voltage (3 times of rated voltages) or pressure process, and record this maximum voltage value until reach the highest permission of detected cable; Repeat this resistance test along with cable life increases, record along with cable life increases the withstand voltage variation tendency and data scatter occurred.
Described method also comprises: according to shelf depreciation defects detection result and resistance test result, utilizes and identifies that the cable insulation state of simulation to detected insulated cable is assessed.
In this specific embodiment, described exponential waveform voltage is 0.1Hz mechanical periodicity, t 0~ t 4constant duration distribution successively, each time interval continues 2.5s, and the voltage waveform cycle is 10s.
Described local discharge characteristic parameter comprises the amplitude of partial discharge pulse, phase place and repetition rate parameter.
The concrete grammar analyzing the local discharge characteristic parameter of shelf depreciation defect is: extract excitation voltage waveform negative edge (is t in this specific embodiment 1-t 2and t 3-t 4) part, record start and end time, between these moment, partial discharge pulse's collection terminal gathers the sparking voltage pulse signal that a series of amplitude does not wait, the threshold value progressively improved is set, each by the elimination of pulse below threshold value, again with set time window editing pulse sequence, the coupling of incident pulse and reflected impulse is carried out according to known velocity of wave and detected insulated cable length, and then the distance of Partial Discharge Sources distance samples end is calculated according to the mistiming that pairing pulse is shown in, position, simultaneously to the amplitude of incident pulse and and the phase relation of excitation voltage waveform carry out record, final acquisition is detected local discharge characteristic spectrogram and the location spectrogram of insulated cable.
In this specific embodiment, the detected insulated cable of to be a segment length be x applies the exponential wave voltage presetting waveform parameter α and electric pressure, is collected the Partial Discharge of detected insulated cable by shelf depreciation defect acquisition module.By data according to t defined above 0-t 4be divided into 4 sections, in this specific embodiment, to t 1-t 2and t 3-t 4partial Discharge carry out Pulse pairing, then calculate the time delay Δ t of every paired pulses, then the distance of the detected insulated cable sampling end of partial discharge position distance is Δ x=x-0.5*v Δ t.Meanwhile, to the electric discharge amplitude of often pair of partial discharge pulse and and the phase place corresponding relation of voltage waveform get ready, local discharge characteristic spectrogram and local breakdown location spectrogram can be obtained.
Be applicable to cable insulation shelf depreciation defect and the state of insulation overpressure resistance detecting device of above cable insulation shelf depreciation defect and state of insulation resistance test method, comprise;
Exponential waveform voltage drive source, for generation of the exponential waveform voltage of mechanical periodicity, and is applied on detected insulated cable;
Shelf depreciation defect acquisition module, and is coupled collecting unit on the contrary, at negative edge or the rising edge of exponential wave, gathers the local discharge signal of described detected insulated cable;
Local discharge characteristic Parameter analysis module, by the local discharge signal gathered, analyzes the local discharge characteristic parameter of shelf depreciation defect;
Condition assessment of insulation module, according to dielectric loss testing result, shelf depreciation defects detection result and resistance test result, utilizes and identifies that the cable insulation state of simulation to detected insulated cable is assessed.
As shown in Figure 2, described exponential waveform voltage drive source comprises AC transformer 32 (being step-up transformer in this concrete enforcement), semiconductor switch module, waveform adaptation module 38 and Master Control Unit 39; Two input ends (once holding) of described AC transformer 32 are connected with AC power (being mains supply in this specific embodiment) by primary side shearing device 31; Two output terminals of described transformer, one end is connected with semiconductor switch module by protective resistance 33, other end ground connection; Described semiconductor switch module adapts to module by high voltage silicon rectifier stack 36 with waveform and is connected; Described semiconductor switch module comprises the first semiconductor switch module 34 and the second semiconductor switch module 35; Described first semiconductor switch module 35 is only at positive charge loop (t 0-t 1) and back discharge loop (t 3-t 4) middle work; Described second semiconductor switch module 34 is only at forward discharge loop (t 1-t 2) and reverse charging loop (t 2-t 3) middle work; Described waveform adapts to module 38 and comprises, the first input end be connected with high voltage silicon rectifier stack 36 and the second input end be connected with another output terminal of AC transformer 32; Described waveform adapts to module and also comprises the first output terminal be connected with detected insulated cable core and the second output terminal be extremely connected with detected insulated cable ground wire; Described Master Control Unit 39 (passing through optical fiber) and control shearing device is connected, and cuts off the electricity supply at discharge regime, the transformer of short circuit simultaneously primary side; Described Master Control Unit (by optical fiber) is connected with the first and second semiconductor switch modules, regulates the frequency of the exponential voltage put on detected insulated cable; Described Master Control Unit (by optical fiber) and waveform adapt to module and are connected, and regulate the waveform shape of the exponential voltage put on detected insulated cable;
The output voltage of described AC transformer is 0 to 30kV.
In this specific embodiment, primary side shearing device 31 adopts 10A solid-state relay; Step-up transformer 32 is 220V input, and 30kV exports, power 500W HT testing transformer; Protective resistance 33 adopts resistance to be 15k Ω; the high voltage non-inductance resistor of power 10W; high voltage silicon rectifier stack 36,37 is that 30kV is withstand voltage; the high voltage silicon rectifier stack of through-flow 20A; Master Control Unit 39 is the FPGA control circuit board controlled based on ARM; output multi-channel light/electric signal, controls solid-state relay, high-voltage semi-conductor switch and waveform respectively and adapts to module.
In this specific embodiment, described both first and second semiconductor switch modules have identical structure, as shown in Figure 3, described first or second semiconductor switch module comprises the electron electric power switch of more than 10 IGBT switch element cascaded structures, and each IGBT switch element structure comprises the isolating transformer, IGBT drive circuit, IGTB chip and the buffering protection circuit that are connected successively; Master Control Unit is connected with IGBT drive circuit transfer control signal.In this specific embodiment, civil power is connected with the input end of isolating transformer as supply voltage, and isolating transformer adopts 100W, the high voltage isolating transformer of isolation voltage 30kV.
Described waveform adapts to module and comprises the isolation capacitance 51 be connected between two input ends or two output terminals; Also comprise series connection and the plural IGBT module between first input end and the first output terminal; Described IGBT module comprises the first igbt transistor and the second igbt transistor two igbt transistors and a parameter regulating resistance; The emitter of described first igbt transistor is connected to parameter regulating resistance one end, and collector is connected to the other end of parameter resistance; The collector of described second igbt transistor is connected to described parameter regulating resistance one end, and emitter is connected to the other end of described parameter resistance; Master Control Unit is connected with the gate pole of all igbt transistors, controls cut-offfing of each igbt transistor.In this specific embodiment, the resistance sealing in exponential waveform driving source to module 38 by the selectivity action of semiconductor switch changes (short-circuit resistance), reaches amendment U 0the object of middle α value and then adjustment test product two ends exponential wave voltage waveform.Semiconductor switch 512,513 ..., the 521 only selectivity conductings when high-voltage semi-conductor switch 35 works, other moment all turn off; Semiconductor switch 52,53 ..., the 511 only selectivity conductings when high-voltage semi-conductor switch 34 works, other moment all turn off.
As shown in Figure 4, in this specific embodiment, electric capacity 51 adopts 500nF/30kV higfh-tension ceramics electric capacity, semiconductor switch 52,53 ..., 511 and 512,513,, 521 adopt the igbt chip IXB40N1000 of ixys companies, single igbt chip is withstand voltage 3kV, through-flow 40A; Resistance 522,523 ..., 531 adopt 1.5M Ω, power 30W resistant series.
As shown in Figure 5, described shelf depreciation defect acquisition module comprises coupling capacitance 62 and repeating resistance 65, also comprises the overvoltage protection diode 66 in parallel with described repeating resistance 65; One end of described coupling capacitance 62 is connected with the core of detected insulated cable, and the other end is connected with one end of repeating resistance 65; The other end ground connection of described repeating resistance 65.
In this specific embodiment, repeating resistance 65 and overvoltage protection diode 66 put into shielding box jointly, reduce spatial electromagnetic interference.Described repeating resistance adopts noninductive resistance, improves the sensitivity that local discharge signal gathers.

Claims (10)

1. cable insulation shelf depreciation defect and a state of insulation resistance test method, concrete grammar is: the exponential waveform voltage applying mechanical periodicity on detected cable; Pass through described exponential wave high voltage at exponential wave negative edge or rising edge, encourage the local discharge signal of described detected insulated cable; Acquisition and recording is carried out to local discharge signal, analyzes the local discharge characteristic parameter of shelf depreciation defect;
The waveform of the exponential waveform voltage of described mechanical periodicity meets following formula:
U 0 = V in ( 1 - e - α ( t - t 0 ) ) , t 0 ≤ t ≤ t 1 ; V in e - α ( t - t 1 ) , t 1 ≤ t ≤ t 2 ; V in ( 1 - e - α ( t - t 2 ) ) , t 2 ≤ t ≤ t 3 ; V in e - α ( t - t 3 ) . t 3 ≤ t ≤ t 4 ;
Wherein, U 0for the waveform of the exponential waveform voltage of described mechanical periodicity; V infor the voltage magnitude preset; A is exponential waveform attenuation parameter, and its value is determined by exponential waveform driving source setup parameter and detected electric cable capacitance capacitance and insulation resistance parameter; t 0~ t 4constant duration distribution successively; Described method also comprises resistance test: improve and apply electric pressure, applies to find punch-through or the potential risk that punctures in magnitude of voltage or pressure process, and record this maximum voltage value until reach the highest permission of detected cable; Repeat this resistance test along with cable life increases, record along with cable life increases the withstand voltage variation tendency and data scatter occurred.
2. cable insulation shelf depreciation defect according to claim 1 and state of insulation resistance test method, described method also comprises: according to shelf depreciation defects detection result and resistance test result, utilizes and identifies that the cable insulation state of simulation to detected insulated cable is assessed.
3. cable insulation shelf depreciation defect according to claim 1 and state of insulation resistance test method, described local discharge characteristic parameter comprises the amplitude of partial discharge pulse, phase place and repetition rate parameter.
4. cable insulation shelf depreciation defect according to claim 1 and state of insulation resistance test method, the concrete grammar analyzing the local discharge characteristic parameter of shelf depreciation defect is: extract excitation voltage waveform negative edge part, record start and end time, between these moment, partial discharge pulse's collection terminal gathers the sparking voltage pulse signal that a series of amplitude does not wait, the threshold value progressively improved is set, each by the elimination of pulse below threshold value, again with set time window editing pulse sequence, the coupling of incident pulse and reflected impulse is carried out according to known velocity of wave and detected insulated cable length, and then the distance of Partial Discharge Sources distance samples end is calculated according to the mistiming that pairing pulse is shown in, position, simultaneously to the amplitude of incident pulse and and the phase relation of excitation voltage waveform carry out record, final acquisition is detected local discharge characteristic spectrogram and the location spectrogram of insulated cable.
5. cable insulation shelf depreciation defect and a state of insulation overpressure resistance detecting device, is characterized in that, comprise;
Exponential waveform voltage drive source, for generation of the exponential waveform voltage of mechanical periodicity, and is applied on detected insulated cable;
Shelf depreciation defect acquisition module, at negative edge or the rising edge of exponential wave, gathers the local discharge signal of described detected insulated cable;
Local discharge characteristic Parameter analysis module, by the local discharge signal gathered, analyzes the local discharge characteristic parameter of shelf depreciation defect.
6. cable insulation shelf depreciation defect according to claim 5 and state of insulation overpressure resistance detecting device, it is characterized in that, also comprise Condition assessment of insulation module, according to shelf depreciation defects detection result and resistance test result, utilize and identify that the cable insulation state of simulation to detected insulated cable is assessed.
7. cable insulation shelf depreciation defect according to claim 5 and state of insulation overpressure resistance detecting device, is characterized in that, described exponential waveform voltage drive source comprises AC transformer, semiconductor switch module, waveform adaptation module and Master Control Unit; Two input ends of described AC transformer are connected with AC power by primary side shearing device; Two output terminals of described transformer, one end is connected with semiconductor switch module by protective resistance, other end ground connection; Described semiconductor switch module adapts to module by high voltage silicon rectifier stack and waveform and is connected; Described semiconductor switch module comprises the first semiconductor switch module and the second semiconductor switch module; Described first semiconductor switch module only works in positive charge loop and back discharge loop; Described second semiconductor switch module only works in forward discharge loop and reverse charging loop; Described waveform adapts to module and comprises, the first input end be connected with high voltage silicon rectifier stack and the second input end be connected with another output terminal of AC transformer; Described waveform adapts to module and also comprises the first output terminal be connected with detected insulated cable core and the second output terminal be extremely connected with detected insulated cable ground wire; Described Master Control Unit and control shearing device is connected, and cuts off the electricity supply at discharge regime, the transformer of short circuit simultaneously primary side; Described Master Control Unit is connected with the first and second semiconductor switch modules, regulates the frequency of the exponential voltage put on detected insulated cable; Described Master Control Unit and waveform adapt to module and are connected, and regulate the waveform shape of the exponential voltage put on detected insulated cable;
The output voltage of described AC transformer is 0 to 30kV.
8. cable insulation shelf depreciation defect according to claim 7 and state of insulation overpressure resistance detecting device, it is characterized in that, described first or second semiconductor switch module comprises the electron electric power switch of more than 10 IGBT switch element cascaded structures, and each IGBT switch element structure comprises the isolating transformer, IGBT drive circuit, IGTB chip and the buffering protection circuit that are connected successively; Master Control Unit is connected with IGBT drive circuit.
9. cable insulation shelf depreciation defect according to claim 7 and state of insulation overpressure resistance detecting device, is characterized in that, described waveform adapts to module and comprises the isolation capacitance be connected between two input ends or two output terminals; Also comprise series connection and the plural IGBT module between first input end and the first output terminal; Described IGBT module comprises the first igbt transistor and the second igbt transistor two igbt transistors and a parameter regulating resistance; The emitter of described first igbt transistor is connected to parameter regulating resistance one end, and collector is connected to the other end of parameter resistance; The collector of described second igbt transistor is connected to described parameter regulating resistance one end, and emitter is connected to the other end of described parameter resistance; Master Control Unit is connected with the gate pole of all igbt transistors, controls cut-offfing of each igbt transistor.
10. cable insulation shelf depreciation defect according to claim 5 and state of insulation overpressure resistance detecting device, it is characterized in that, described shelf depreciation defect acquisition module comprises coupling capacitance and repeating resistance, also comprises the overvoltage protection diode in parallel with described repeating resistance; One end of described coupling capacitance is connected with the core of detected insulated cable, and the other end is connected with one end of repeating resistance; The other end ground connection of described repeating resistance.
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