CN104935307A - Ultra-wide spectrum high-power four-pulse-string generating device - Google Patents
Ultra-wide spectrum high-power four-pulse-string generating device Download PDFInfo
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- CN104935307A CN104935307A CN201510427919.3A CN201510427919A CN104935307A CN 104935307 A CN104935307 A CN 104935307A CN 201510427919 A CN201510427919 A CN 201510427919A CN 104935307 A CN104935307 A CN 104935307A
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Abstract
The invention discloses an ultra-wide spectrum high-power four-pulse-string generating device. The ultra-wide spectrum high-power four-pulse-string generating device is characterized by comprising four sections of forming lines which are connected together in series through annular switches, each forming line is connected with an isolation inductor in series to be charged, and the four sections of forming lines are connected in series into a whole; the output ends of the forming lines are connected with matching transmission lines, and the transmission lines and the forming lines are connected together through the annular switches. The forming lines of the device are simple in structure and can be combined at will to form the pulse string device with the pulse number smaller than or equal to four. The peak power of the pulse string generated by the device is high and can reach the GW level; the interval between generated pulses is shorter than 10 ns, and the repeat frequency of generating the pulses can be adjusted within a certain range by adjusting the gaps of the switches and the connecting time of an air pressure control switch.
Description
Technical field
The invention belongs to High-Power Microwave technical field, be specifically related to one and utilize multistage to form line series connection generation ultra-wide spectrum high power four pulse train device.
Background technology
Ultra-wide spectrum microwave is HPM(High-Power Microwave) one, the UWS-EMP of its radiation embodies broadband character, the response frequency of easier coverage goal, common frequency agility technology cannot break away from its control; Pulse narrow (transient state), can get over the protective circuit of goal systems, destroys or benumbs electronic system, computer Sensitive Apparatus and receiver front end after protective circuit, upset enemy weapon fuse, guidance and communication.Ultra-wide spectrum source eliminates the needs about the cognition of enemy's missile characteristics, is difficult to protection, and the country such as the U.S. and Russia all pays much attention to the research and development of high power ultra-wide spectrum pulse technique.According to effect preliminary experimental results, improve the operating frequency of pulse, can reduce the threshold value of effector molecules, propose accordingly to produce instantaneous multiple-pulse ultra-wide spectrum technological concept, interpulse is spaced apart a few ns.On the basis not increasing feeder line, antenna constant power capacity, the operating distance of pairing effect target can be improved.
The principle of current known multiple-pulse power system can be divided into two kinds: one be by energy storage device with can combine by the power switch that runs of high repetition frequency, by the conducting of switch with turn off the output realizing multiple pulse; Another kind of mode then utilizes many cover pulse power systems not producing multiple pulse successively in the same time, pooled multi-pulse train by method of confluxing accordingly again, such as series connection forms line method, silicon stack isolation network method, utilizes the mode etc. of pulse cycle.Article " Solid-state modulator R & D at LLNL " (International Workshop on Recent Progress of Induction Ac-celerators. 2002.) is mentioned, power switch is utilized to realize Gao Zhongying, due to the restriction of switch power, its pulse amplitude is usually at tens of below kV.Pulse forming line parallel way is utilized to produce pulse train, the deciding factor affecting pulse repetition frequency is the reverse recovery time of high voltage silicon stack, after pulse is above passed through, namely diode is in conducting state, the succeeding impulse from other branch roads can not be blocked, the most high repetition frequency that the system that therefore determines the reverse recovery time of silicon stack entirety can reach.Amplitude in article " three pulse power system module " (light laser and the particle beams, the 24th volume the 4th phase in 2012, P893-897) can reach 300kV, but the pulse spacing is not less than 500ns.Article " utilize pulse cycle produce high pressure multiple-pulse " (light laser and the particle beams, 22nd volume the 3rd phase in 2010, P474-478) in high resistant about 1 k Ω load, obtain the multiple pulses being greater than 200kV to export, pulse duration 120 ns, interval are no more than 400 ns.
Summary of the invention
The object of the invention is the high pressure (in 50 Ω loads) of the repetition rate in order to realize tens MHz, hundreds of kV, a kind of mode utilizing series connection to form line is provided to produce the device of pulse train, this device can produce four pulse trains, interval between pulse train is less than 10ns, and power output reaches 2.8GW
The present invention adopts following technical scheme for achieving the above object: a kind of ultra-wide spectrum high power four pulse train generation device, it is characterized in that comprising four sections forms line, be cascaded by ring switch between every section of formation line, every section forms line by isolation inductance serial connection charge, and four sections form line and connect as a whole; The output forming line is connected with matched transmission line, is linked together between transmission line and formation line by ring switch;
The specific works process of pulse train generation device is:
High-voltage pulse power source charges to multistage pulse forming line simultaneously, is regulated the charging interval of each pulse forming line by charging inductance;
When the first paragraph adjacent with transmission line formed line charge time, between transmission line and formation line, coating-forming voltage is poor, and the voltage difference that second segment formation line and first paragraph are formed between line is very little, now first paragraph forms the ring switch conducting between line and transmission line, first paragraph forms line and discharges, and forms first pulse;
When the first paragraph voltage formed on line is zero, it is poor that second segment formation line and first paragraph form coating-forming voltage between line, and now second segment formation line and first paragraph form the ring switch conducting between line, form second pulse;
The like, the 3rd ring switch conducting forms the 3rd pulse, and the 4th ring switch conducting forms the 4th pulse;
Pulse train is formed to the 4th pulses generation from first pulses generation.
In technique scheme, the profile forming line is column construction, two ends are pyramidal structure, comprises inner core and urceolus, arranges organic glass insulator between inner core and urceolus, two end faces of inner core arrange sealing ring, in the cavity that inner core and urceolus are formed, is sealed into gases at high pressure.
In technique scheme, ring switch is arranged on adjacent two sections and is formed between the inner core of lines, and the inner core that ring switch and adjacent both ends form line is connected as a whole, and in the urceolus that ring switch is formed line is coated on.
In technique scheme, when the series connection of every section of formation line is integrated, the gases at high pressure of the different air pressure of sealing in the cavity of every section of formation line.
In technique scheme, a surface of polymethyl methacrylate insulator and the exterior surface of inner core, a surface contacts with the inner surface of urceolus, and other surface is provided with some roads cannelure to insulator.
In technique scheme, each ring switch comprises switch base and switch, very close to each other between switch and pedestal.
In technique scheme, described switch is annular, by the gap adjustment regulating the size of shape switch to realize ring switch.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows: the structure that this device forms line is simple, can be arbitrarily made with the pulse train device that umber of pulse is less than or equal to 4 pulses; The peak power of the pulse train that this device produces is high, can reach GW level; Interval between the pulse produced is less than 10ns, and can pass through the gap of by-pass cock and the ON time of baroswitch, can be implemented in the repetition rate regulating in certain limit and produce pulse.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is circuit diagram of the present invention;
Fig. 2 is the structure chart that the present invention forms line;
Fig. 3 is the partial enlarged drawing of ring switch;
Fig. 4 is the partial enlarged drawing of L shape switch;
Wherein: T1, T2, T3, T4 form line; T0 is transmission line, and 1 is ring switch I, and 2 is taper urceolus, and 3 is polymethyl methacrylate insulators, and 4 is taper inner cores, and 5 is ring switches II, and 6 is pedestals.
Embodiment
As shown in Figure 1, be circuit diagram of the present invention, wherein T1 ~ T4 is the coaxial formation line that structural parameters are identical; L1 ~ L4 is the isolation inductance forming line serial connection charge; U10, U12, U11, U5 are the ring switch forming line and formed between line; C1 ~ C4 is switching capacity; The transmission line of T0 to be impedance be 10 Ω; R1 is the matched load resistance of 10 Ω.
As shown in Figure 2, be the structure chart that the present invention forms line.The present invention primarily of four segment structures identical formation line composition, below mainly introduce the structure forming line.The central diameter of ring switch I is 158, and thickness is 10, and end face leads the fillet of R5; The most imperial palace of taper urceolus is through being 202mm for 314mm, minimum interior warp, and the wall thickness of urceolus is 13mm; The external diameter of polymethyl methacrylate insulator is 314mm, interior warp is 288mm, and the end face of insulator is designed with cannelure, object be in order to increase insulator along face length degree.The effect of polymethyl methacrylate insulator mainly contains two, and one is isolating switch chamber, and two is the filled medias as forming line, shortens the structure length forming line, makes the size of whole device less; The maximum outer warp of taper inner core is 252mm, minimum outer warp is 164mm, and the wall thickness of inner core is 4mm; The central diameter of ring switch II is 158 mm, and thickness is 2 mm, and end face leads the fillet of R1.When two sections of formation lines are together in series, ring switch I, ring switch II are sealed in gases at high pressure as pair of switches, four sections of four switches forming line are sealed in different cavitys respectively, can distinguish gap and the air pressure of by-pass cock like this, thus can control the firing point of each switch.In this device, be the transmission line of one section of 10 Ω after four sections of formation lines, the internal diameter of the urceolus of transmission line is 200mm, external diameter is 220mm, and the internal diameter of transmission line inner core is 164mm, external diameter is 168mm.Transmission line ohmic load is below composed in parallel by the noninductive resistance of 5 50 Ω, this is done to the power capacity increasing ohmic load, avoid resistance to puncture.
In the present invention, high-voltage pulse power source charges to multistage pulse forming line simultaneously, is regulated the charging interval of each pulse forming line by charging inductance.When formation line T1 charging voltage is U, the voltage difference formed between line T1 and transmission line T0 is U, and the voltage difference formed between line T1 and T2 is very little, now switch U1 conducting, forms first pulse; After this voltage of transmission line T1 reduces to 0, and the voltage difference between transmission line T2 and T1 is U, now switch U2 conducting, forms second pulse, the like can obtain multiple pulse.Because the recovery time of gas switch is longer, and interpulse period is at nanosecond time ranges, and what can be similar to thinks that the switch after conducting keeps conducting state in whole pulse train forming process always.
This device is the adjustment being realized switch gap by the ring switch II of replacing different size.Fig. 3 is the connected mode enlarged drawing of ring switch II, and in figure, 6 is the pedestal of ring switch II, is positioned at the end that taper forms line; 5 is ring switch II, is connected with pedestal by 8 sunk screws.By changing the switch (as Fig. 4) of different size, realize the adjustment of switch gap.
When two sections of formation lines are together in series, ring switch I, ring switch II are sealed in a cavity as pair of switches, and four sections of four switches forming lines are sealed in different cavitys respectively, can regulate the air pressure of each switch so respectively.Due to gap and the air pressure of each switch can be regulated separately, the control of switch conduction times easily can be realized, thus the time interval between control impuls string, the i.e. frequency of pulse train.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature of disclosing in this manual or any combination newly, and the step of the arbitrary new method disclosed or process or any combination newly.
Claims (7)
1. a ultra-wide spectrum high power four pulse train generation device, be is characterized in that comprising four sections forms line, is cascaded between every section of formation line by ring switch, and every section forms line by isolation inductance serial connection charge, and four sections form line and connect as a whole; The output forming line is connected with matched transmission line, is linked together between transmission line and formation line by ring switch;
The specific works process of pulse train generation device is:
High-voltage pulse power source charges to multistage pulse forming line simultaneously, is regulated the charging interval of each pulse forming line by charging inductance;
When the first paragraph adjacent with transmission line formed line charge time, between transmission line and formation line, coating-forming voltage is poor, and the voltage difference that second segment formation line and first paragraph are formed between line is very little, now first paragraph forms the ring switch conducting between line and transmission line, forms first pulse;
Then form line to first paragraph to discharge, when the first paragraph voltage formed on line is zero, it is poor that second segment formation line and first paragraph form coating-forming voltage between line, and now second segment formation line and first paragraph form the ring switch conducting between line, form second pulse;
The like, the 3rd ring switch conducting forms the 3rd pulse, and the 4th ring switch conducting forms the 4th pulse;
Pulse train is formed to the 4th pulses generation from first pulses generation.
2. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 1, it is characterized in that the profile forming line is column construction, two ends are pyramidal structure, comprise inner core and urceolus, organic glass insulator is set between inner core and urceolus, two end faces of inner core arrange sealing ring, in the cavity that inner core and urceolus are formed, is sealed into gases at high pressure.
3. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 1 and 2, it is characterized in that ring switch is arranged on adjacent two sections and is formed between the inner core of line, the inner core that ring switch and adjacent both ends form line is connected as a whole, and in the urceolus that ring switch is formed line is coated on.
4. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 3, when it is characterized in that every section of ring switch series connection formed between line and formation line is integrated, the gases at high pressure of the different air pressure of sealing in the cavity of every section of formation line.
5. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 2, it is characterized in that a surface of polymethyl methacrylate insulator and the exterior surface of inner core, a surface contacts with the inner surface of urceolus, and other surface is provided with some roads cannelure to insulator.
6. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 4, is characterized in that each ring switch comprises switch base and switch, very close to each other between switch and pedestal.
7. a kind of ultra-wide spectrum high power four pulse train generation device according to claim 6, is characterized in that described switch is for annular, by the gap adjustment regulating the size of ring switch to realize ring switch.
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| CN201510427919.3A CN104935307A (en) | 2015-07-21 | 2015-07-21 | Ultra-wide spectrum high-power four-pulse-string generating device |
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| CN201510427919.3A CN104935307A (en) | 2015-07-21 | 2015-07-21 | Ultra-wide spectrum high-power four-pulse-string generating device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106953620A (en) * | 2017-03-23 | 2017-07-14 | 西北核技术研究所 | A kind of high repetitive frequency pulsed generation device of tandem |
| CN107070436A (en) * | 2017-04-25 | 2017-08-18 | 中国工程物理研究院流体物理研究所 | A kind of LTD tandem arrangements |
Citations (2)
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| CN102664607A (en) * | 2012-05-14 | 2012-09-12 | 中国工程物理研究院应用电子学研究所 | Novel high-pressure square-wave pulse generating system |
| CN204089634U (en) * | 2014-08-19 | 2015-01-07 | 中国工程物理研究院核物理与化学研究所 | Ultra-compact high-voltage nanosecond pulse source |
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2015
- 2015-07-21 CN CN201510427919.3A patent/CN104935307A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102664607A (en) * | 2012-05-14 | 2012-09-12 | 中国工程物理研究院应用电子学研究所 | Novel high-pressure square-wave pulse generating system |
| CN204089634U (en) * | 2014-08-19 | 2015-01-07 | 中国工程物理研究院核物理与化学研究所 | Ultra-compact high-voltage nanosecond pulse source |
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| 陆巍等: ""瞬时超宽谱多脉冲产生技术研究"", 《微波学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106953620A (en) * | 2017-03-23 | 2017-07-14 | 西北核技术研究所 | A kind of high repetitive frequency pulsed generation device of tandem |
| CN106953620B (en) * | 2017-03-23 | 2021-02-12 | 西北核技术研究所 | Tandem high repetition frequency pulse generating device |
| CN107070436A (en) * | 2017-04-25 | 2017-08-18 | 中国工程物理研究院流体物理研究所 | A kind of LTD tandem arrangements |
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Effective date of registration: 20160803 Address after: Mianyang City, Sichuan Province, 621054 Mountain Road No. 64 Applicant after: Sichuan Science City Jiuli Technology Industrial Co., Ltd. Address before: 621000 Mianyang, Sichuan, box 1013, box of 919 Applicant before: Applied Electronics Inst., Chinese Engineering Physics Inst. |
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Effective date of registration: 20160908 Address after: 610000, No. 1609, 2039 / F, Tianfu Haitang center, Tianfu Road, Tianfu New District, Sichuan, Chengdu Province, No. 16, building No. Applicant after: Sino long ante Equipment Co., Ltd. Address before: Mianyang City, Sichuan Province, 621054 Mountain Road No. 64 Applicant before: Sichuan Science City Jiuli Technology Industrial Co., Ltd. |
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Application publication date: 20150923 |
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