CN104935291A - Sapphire microwave oscillator with low phase noise - Google Patents
Sapphire microwave oscillator with low phase noise Download PDFInfo
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- CN104935291A CN104935291A CN201510357893.XA CN201510357893A CN104935291A CN 104935291 A CN104935291 A CN 104935291A CN 201510357893 A CN201510357893 A CN 201510357893A CN 104935291 A CN104935291 A CN 104935291A
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Abstract
The invention discloses a sapphire microwave oscillator with low phase noise. The sapphire microwave oscillator comprises a mixer, a low pass filter, a power detector, a integral circuit, a voltage controlled phase shifter, a manual phase shifter, a microwave amplifier, a power coupler, a microwave circulator, a sapphire filter and a temperature control circuit, wherein the sapphire filter comprises an evacuated enclosure, a heating wire 13, a metallic shield chamber, a sapphire crystal and a vacuum maintaining subassembly. The microwave oscillator of the invention could obtain a stable high-frequency microwave signal with low phase noise under room temperature, and the phase noise of the microwave signal at the far-end is far higher than the index reached by crystal oscillator frequency doubling.
Description
Technical field
The present invention relates to a kind of microwave oscillator.More specifically, a kind of Low phase noise sapphire microwave oscillator is related to.
Background technology
The Microwave Frequency Source of Low phase noise, high stability is widely used with radar, communicate the field such as to measure.Traditional microwave source is generally obtained by the many times frequency multiplication of crystal oscillator, but along with the increase of frequency multiplication number of times, make an uproar mutually (short-term stability) can be increasing, that is makes an uproar mutually and can increase along with the increase of carrier frequency.Low temperature (4k) sapphire Microwave Frequency Source has extremely low phase noise (at X-band, <-160dBc/Hz10kHz) and excellent short-term stability (<1E-151s).The microwave source adopting sapphire high Q RF filter to be formed can produce extremely low phase noise at high frequency, has higher index than the high-frequency signal obtained by crystal oscillator many times frequency multiplication.But because Cryo Equipment needs higher maintenance cost and bulky, be only applicable to laboratory environment at present.The sapphire Microwave Frequency Source that can normally run under normal temperature has important application prospect and wide application, due to without the need to adopting low-temperature liquid helium equipment, has lower cost and simple structure, and easy to maintenance.But the weak point of sapphire resonant cavity is the dielectric constant with temperature change of sapphire crystal, make the temperature coefficient of sapphire resonant cavity very high, and the drift of sapphire dielectric constant with temperature is larger, therefore, the temperature drift coefficients comparison large (50KHz-70KHz) of resonant cavity, these can affect the long-time stability of sapphire resonant cavity.The people such as M.E.Tobar adopt sapphire high Q resonant cavity to form oscillation circuit, Low phase noise (the Low Noise 9-GHz Sapphire Resonator Oscillatorwith Thermoelectric Temperature Stabilization at 300Kelvin of-124dBc/Hz1kHz is obtained when output frequency is 9GHz, IEEE Microwaveand Guided Wave Letters, Vol.5, No.4,1995).The people such as M.E.Tobar adopt normal pressure thermoelectric control mode namely in antivacuum situation, to carry out temperature control, can obtain good temperature-controlled precision.But can not satisfy the demand, therefore need to provide a kind of sapphire microwave oscillator with Low phase noise.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of sapphire microwave oscillator that at room temperature can obtain the high-frequency microwave signal of stable, low noise, this oscillator making an uproar mutually far away higher than the index reached by crystal oscillator frequency multiplication at middle far-end.
For solving the problems of the technologies described above, the present invention adopts following technical proposals:
A kind of Low phase noise sapphire microwave oscillator, comprise: frequency mixer, low pass filter, power detector, integrating circuit, voltage-controlled phase shifter, manual phase shifter, microwave amplifier, power coupler, microwave circulator, sapphire filter, temperature-control circuit, wherein sapphire filter comprises: vacuum (-tight) housing, heater strip 13, metallic enclosure, sapphire crystal, vacuum maintain assembly.
The B port of sapphire filter is connected with the B port of voltage-controlled phase shifter, then be connected with the A port of manual phase shifter by the C port of voltage-controlled phase shifter, manually the B port of phase shifter is connected with the A port of microwave amplifier again, the B port of microwave amplifier is connected with the A port of microwave circulator, and the B port of microwave circulator is connected to form an oscillation circuit with the A port of sapphire filter again.The C port of microwave circulator is connected with the A port of frequency mixer, then be connected with the A port of low pass filter by the B port of frequency mixer, be connected with the A port of power detector by the B port of low pass filter again, the B port of power detector is connected with the port of integrating circuit, then the B port of integrating circuit is connected with the A port of voltage-controlled phase shifter, forms voltage-controlled frequency stabilization loop.In sapphire filter, heating component is fixed in the groove of the outer wall of metallic enclosure by vacuum glue, the outer wall of metallic enclosure places thermistor, the mode that sapphire crystal is fastened by bolts is fixed on the bottom of metallic enclosure, and metallic enclosure is bolted in vacuum (-tight) housing.The C port of sapphire filter is connected with temperature-control circuit, forms temperature control closed-loop path.
Preferably, described heating component is electrical heating wire.
During use, first determine the output frequency of designed microwave frequency, select the frequency mixer 1 of same frequency, power detector 3, voltage-controlled phase shifter 5, manual phase shifter 6, microwave amplifier 7, power coupler 8, microwave circulator 9, sapphire filter 10 accordingly.First degasification, pump-down process are carried out to sapphire filter 10, then adopt vacuum pump group to bleed, after entering 10E-4Pa, close vacuum pump group, start the condition of high vacuum degree in vacuum maintenance assembly maintenance vacuum (-tight) housing.Carry out each parts connection according to said sequence, the first step arranges the equalized temperature point of temperature control closed-loop path.Second step regulates the phase value of manual phase shifter 6, can observe microwave signal at output port 8C place.Whether the bias voltage of the 3rd step joint voltage-controlled phase shifter, determine to regulate by the phase noise size of output port 8C place test and put in place.After completing above step, this system namely can stable output, Low phase noise microwave signal.
Beneficial effect of the present invention is as follows:
A kind of Low phase noise sapphire of the present invention microwave oscillator, at room temperature can obtain high-frequency microwave signal that is stable, Low phase noise, its making an uproar mutually far away higher than the index arrived by crystal oscillator frequency multiplication at middle far-end.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 illustrates structured flowchart of the present invention.
Fig. 2 illustrates the structural representation of sapphire filter of the present invention.
Embodiment
In order to be illustrated more clearly in the present invention, below in conjunction with preferred embodiments and drawings, the present invention is described further.Parts similar in accompanying drawing represent with identical Reference numeral.It will be appreciated by those skilled in the art that specifically described content is illustrative and nonrestrictive, should not limit the scope of the invention with this below.
As shown in Figure 1 and Figure 2, a kind of Low phase noise sapphire microwave oscillator, comprise: frequency mixer 1, low pass filter 2, power detector 3, integrating circuit 4, voltage-controlled phase shifter 5, manual phase shifter 6, microwave amplifier 7, power coupler 8, microwave circulator 9, sapphire filter 10, temperature-control circuit 11, wherein sapphire filter 10 comprises: vacuum (-tight) housing 12, heater strip 13, metallic enclosure 14, sapphire crystal 15, vacuum maintain assembly 16.
The B port of sapphire filter 10 is connected with the B port of voltage-controlled phase shifter 5, then be connected with the A port of manual phase shifter 6 by the C port of voltage-controlled phase shifter 5, manually the B port of phase shifter 6 is connected with the A port of microwave amplifier 7 again, the B port of microwave amplifier 7 is connected with the A port of microwave circulator 9, and the B port of microwave circulator 9 is connected to form an oscillation circuit with the A port of sapphire microwave cavity 3 again.The C port of microwave circulator 9 is connected with the A port of frequency mixer 1, then be connected with the A port of low pass filter 2 by the B port of frequency mixer 1, be connected with the A port of power detector 3 by the B port of low pass filter 2 again, the B port of power detector 3 is connected with the A port of integrating circuit, then the B port of integrating circuit is connected with the A port of voltage-controlled phase shifter 5, forms voltage-controlled frequency stabilization loop.In sapphire filter 10, electrical heating wire 13 is fixed in the groove of the outer wall of metallic enclosure 14 by vacuum glue, the outer wall of metallic enclosure 14 places thermistor, the mode that sapphire crystal 15 is fastened by bolts is fixed on the bottom of metallic enclosure 14, and metallic enclosure 14 is bolted in vacuum (-tight) housing 12.The C port of sapphire filter 10 is connected with temperature-control circuit 11, forms temperature control closed-loop path.The temperature controlling point of temperature-adjusting circuit is generally between 40 ~ 60 degree.
During use, first determine the output frequency of designed microwave frequency, select the frequency mixer 1 of same frequency, power detector 3, voltage-controlled phase shifter 5, manual phase shifter 6, microwave amplifier 7, power coupler 8, microwave circulator 9, sapphire filter 10 accordingly.First degasification, pump-down process are carried out to sapphire filter 10, then adopt vacuum pump group to bleed, after entering 10E-4Pa, close vacuum pump group, start the condition of high vacuum degree in vacuum maintenance assembly maintenance vacuum (-tight) housing.Carry out each parts connection according to said sequence, the first step arranges the equalized temperature point of temperature control closed-loop path.Second step regulates the phase value of manual phase shifter 6, can observe microwave signal at output port 8C place.Whether the bias voltage of the 3rd step joint voltage-controlled phase shifter, determine to regulate by the phase noise size of output port 8C place test and put in place.After completing above step, this system namely can stable output, Low phase noise microwave signal.In this example when exporting 9.2GHz, frequency deviation to be made an uproar≤105dBc/Hz in 1kHz phase, and frequency deviation is made an uproar in 10kHz phase and reached≤125dBc/Hz.
Obviously; the above embodiment of the present invention is only for example of the present invention is clearly described; and be not the restriction to embodiments of the present invention; for those of ordinary skill in the field; can also make other changes in different forms on the basis of the above description; here cannot give exhaustive to all execution modes, every belong to technical scheme of the present invention the apparent change of extending out or variation be still in the row of protection scope of the present invention.
Claims (3)
1. a Low phase noise sapphire microwave oscillator, it is characterized in that: comprise frequency mixer (1), low pass filter (2), power detector (3), integrating circuit (4), voltage-controlled phase shifter (5), manual phase shifter (6), microwave amplifier (7), power coupler (8), microwave circulator (9), sapphire filter (10), temperature-control circuit (11), wherein sapphire filter (10) comprising: vacuum (-tight) housing (12), heating component (13), metallic enclosure (14), sapphire crystal (15), vacuum maintains assembly (16),
The B port of sapphire microwave cavity (10) is connected with the B port of voltage-controlled phase shifter (5), then be connected with the A port of manual phase shifter (6) by the C port of voltage-controlled phase shifter (5), manually the B port of phase shifter (6) is connected with the A port of microwave amplifier (7) again, the B port of microwave amplifier (7) is connected with the A port of microwave circulator (9), and the B port of microwave circulator (9) is connected to form an oscillation circuit with the A port of sapphire microwave cavity 3 again;
The C port of microwave circulator (9) is connected with the A port of frequency mixer (1), then be connected with the A port of low pass filter (2) by the B port of frequency mixer (1), be connected with the A port of power detector (3) by the B port of low pass filter (2) again, the B port of power detector (3) is connected with the A port of integrating circuit (4), then the B port of integrating circuit (4) is connected with the A port of voltage-controlled phase shifter (5), forms voltage-controlled frequency stabilization loop;
In sapphire filter (10), heating component (13) is fixed in the groove of the outer wall of metallic enclosure (14) by vacuum glue, the outer wall of metallic enclosure (14) places thermistor, the mode that sapphire crystal (15) is fastened by bolts is fixed on the bottom of metallic enclosure (14), metallic enclosure (14) is bolted in vacuum (-tight) housing (12), the C port of sapphire filter (10) is connected with temperature-control circuit (11), forms temperature control closed-loop path; Vacuum maintains assembly (16) for keeping the vacuum degree in vacuum (-tight) housing (12).
2. a kind of Low phase noise sapphire microwave oscillator according to claim 1, is characterized in that: described heating component (13) is electrical heating wire.
3. a kind of Low phase noise sapphire microwave oscillator according to claim 1, is characterized in that: described vacuum maintains assembly (16) can ensure that the vacuum degree in vacuum (-tight) housing (12) is 10E-4Pa.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106972858A (en) * | 2017-04-01 | 2017-07-21 | 北京无线电计量测试研究所 | A kind of sapphire Microwave Frequency Source and control method |
| CN107154799A (en) * | 2017-04-01 | 2017-09-12 | 北京无线电计量测试研究所 | A kind of sapphire Microwave Frequency Source and control method |
| CN107153436A (en) * | 2017-04-01 | 2017-09-12 | 北京无线电计量测试研究所 | A kind of multi-temperature zone sapphire microwave source system and control method |
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| US20080049301A1 (en) * | 2004-07-21 | 2008-02-28 | Ferenc Krausz | Generation Of Radiation With Stabilized Frequency |
| CN103023458A (en) * | 2012-11-13 | 2013-04-03 | 海能达通信股份有限公司 | Active power filter, duplexer and wireless communication equipment |
| CN103457567A (en) * | 2013-09-13 | 2013-12-18 | 北京无线电计量测试研究所 | Inner surface processing method of superconductive resonant cavity used for superconductive frequency-stabilizing oscillator |
| CN103560380A (en) * | 2013-11-12 | 2014-02-05 | 东南大学 | Stable microwave oscillator |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080049301A1 (en) * | 2004-07-21 | 2008-02-28 | Ferenc Krausz | Generation Of Radiation With Stabilized Frequency |
| CN103023458A (en) * | 2012-11-13 | 2013-04-03 | 海能达通信股份有限公司 | Active power filter, duplexer and wireless communication equipment |
| CN103457567A (en) * | 2013-09-13 | 2013-12-18 | 北京无线电计量测试研究所 | Inner surface processing method of superconductive resonant cavity used for superconductive frequency-stabilizing oscillator |
| CN103560380A (en) * | 2013-11-12 | 2014-02-05 | 东南大学 | Stable microwave oscillator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972858A (en) * | 2017-04-01 | 2017-07-21 | 北京无线电计量测试研究所 | A kind of sapphire Microwave Frequency Source and control method |
| CN107154799A (en) * | 2017-04-01 | 2017-09-12 | 北京无线电计量测试研究所 | A kind of sapphire Microwave Frequency Source and control method |
| CN107153436A (en) * | 2017-04-01 | 2017-09-12 | 北京无线电计量测试研究所 | A kind of multi-temperature zone sapphire microwave source system and control method |
| CN107154799B (en) * | 2017-04-01 | 2020-04-14 | 北京无线电计量测试研究所 | Sapphire microwave frequency source and control method |
| CN106972858B (en) * | 2017-04-01 | 2020-04-21 | 北京无线电计量测试研究所 | Sapphire microwave frequency source and control method |
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