CN104934505B - A kind of cavity body structure of the reaction chamber of solaode dry method process for etching - Google Patents
A kind of cavity body structure of the reaction chamber of solaode dry method process for etching Download PDFInfo
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- CN104934505B CN104934505B CN201510396125.5A CN201510396125A CN104934505B CN 104934505 B CN104934505 B CN 104934505B CN 201510396125 A CN201510396125 A CN 201510396125A CN 104934505 B CN104934505 B CN 104934505B
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- reaction chamber
- stainless steel
- steel materials
- aluminium alloy
- solaode
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 title claims abstract description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000010935 stainless steel Substances 0.000 claims abstract description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000004809 Teflon Substances 0.000 claims abstract description 14
- 229920006362 Teflon® Polymers 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000005422 blasting Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 12
- 239000000126 substance Substances 0.000 abstract description 11
- 229910021645 metal ion Inorganic materials 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 208000002925 dental caries Diseases 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000011797 cavity material Substances 0.000 description 25
- 239000000460 chlorine Substances 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 238000010667 large scale reaction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to solar battery sheet manufacturing equipment, plasma etching, vacuum reaction chamber technical field, especially a kind of cavity body structure of the reaction chamber of solaode dry method process for etching.Chamber body is welded by polylith stainless steel materials assembly, the surface spraying plating teflon coatings of stainless steel materials, teflon coatings surface inserting dismountable aluminium alloy lining armoured plate.Teflon coatings are PTFE, PFA, or FEP material.Described stainless steel materials surface is through blasting treatment.Aluminium alloy lining armoured plate is the aluminium sheet or surface aluminum liner armoured plate through depth anodized.Present invention reduces difficulty of processing, decrease the expense of handing over；Deform little under the vacuum pressure bearing Large Enclosure；Easy accessibility, can the effectively solving reaction chamber problem difficult with gate valve and the connection of other cavitys；Aluminium alloy lining armoured plate has resistance to chemical attack, can effectively stop the bombardment to coating for the high energy particle, and will not cause metal ion pollution to silicon chip.
Description
Technical field
The present invention relates to solar battery sheet manufacturing equipment, plasma etching, vacuum reaction chamber technical field, especially one
Plant the cavity body structure of the reaction chamber of solaode dry method process for etching.
Background technology
Plasma etching（RIE）It is widely used in microelectronic component manufacture, including semiconductor chip, liquid crystal display thin film
Transistor（TFT）Driver, micro machine system, solar energy dry method making herbs into wool etc..Its basic concept is the antecedent containing fluorine and chlorine
Gas（Such as SF6, CF4,CCl4, Cl2Deng）Under plasma effect, ionization generation F and Cl etc. has oneself of powerful chemical activity
Reaction is performed etching by base, ion pair substrate surface.For forming plasma, need existing in vacuum cavity interior-excess.Generally
Effective material that vacuum pressure can be born is steel.But steel or ferrum can produce chemical reaction with F or Cl and micro- when being infected with
When on electronic device, its performance can be had a negative impact.
For solving pollution problem, industry leads to Aluminium Alloys in Common Use or anodised aluminium to do（RIE）Cavity material.But aluminum
The bad welding of alloy, so processing must be emptied from the aluminium alloy castings of a monoblock.So not only material cost is high, Er Qiejia
Work high cost.Especially in present invention application, RIE is used for solar battery sheet surface wool manufacturing（Claim dry method making herbs into wool）, need huge
Cavity, its width is more than more than 1 meter.So processing cost is very high.
RIE technological reaction chamber must have following functions key element：1st, bearing vacuum pressure can not have big deformation；2nd, resistance toization
Learn corrosion；3rd, can not produce to wafer contamination metal ion.At present, the manufacture method in the technological reaction chamber of overseas equipment is with list
One aluminium alloy castings, integrally empties machining molding.The major defect of the method is：（1）Large-scale reaction cavity difficult processing
Degree is big, costly；（2）Because Large Enclosure bears vacuum pressure, and the intensity of aluminium alloy is relatively low, and cavity wall thickness increases,
Outfit of equipment larger；（3）Reaction chamber connects relative difficulty with gate valve and other cavitys.
Content of the invention
In order to overcome the shortcomings of existing technology, the invention provides a kind of solaode dry method process for etching is anti-
Answer the cavity body structure in chamber.
The technical solution adopted for the present invention to solve the technical problems is：A kind of solaode dry method process for etching
The cavity body structure of reaction chamber, this chamber body is welded by polylith stainless steel materials assembly, the surface spraying plating of stainless steel materials
Teflon coatings, teflon coatings surface inserting dismountable aluminium alloy lining armoured plate.
According to another embodiment of the invention, further include that described teflon coatings are PTFE, PFA, or FEP（Beautiful
DuPond E.I.Du Pont Company of state）Material.
According to another embodiment of the invention, further include described stainless steel materials surface through blasting treatment.
According to another embodiment of the invention, further include that described alloy lining armoured plate is aluminium sheet or surface is passed through
The aluminum liner armoured plate of depth anodized.
The invention has the beneficial effects as follows,
（1）The cavity being formed compared to unitary block of aluminum processing, the welding of polylith stainless steel materials and dismountable fritter aluminium alloy
Liner armoured plate reduces difficulty of processing, decreases the expense of handing over；
（2）Polylith stainless steel materials and the combination cavity under the vacuum pressures of dismountable fritter aluminium alloy lining armoured plate
Deformation is little；
（3）Polylith stainless steel materials and the combination easy accessibility of dismountable fritter aluminium alloy lining armoured plate, can be effective
Solve the problems, such as that reaction chamber and gate valve and other cavitys connect difficult；
（4）Aluminium alloy lining armoured plate has resistance to chemical attack, can effectively stop the bombardment to coating for the high energy particle, and
Metal ion pollution will not be caused to silicon chip.
Brief description
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is RIE technological reaction chamber corrosion schematic diagram.
Fig. 2 is overseas equipment technique anti-cavity configuration schematic diagram.
Fig. 3 is reaction chamber structural representation of the present invention.
Fig. 4 is reaction chamber I portion structure amplification diagram in Fig. 3.
In figure, 1, process chemistry gas access, 2, technological reaction cavity, 3, upper parallel electrode plate, 4, RF radio-frequency power supply, 5,
F, Cl free radical that chemical gas produce may to the corrosion of cavity, 6, produce metal ion because of the corrosion of cavity and separate out and dirty
Dye, 7, F, Cl free radical of producing of chemical gas, the etching to silicon chip, 8, plasma, 9, vacuum pump, 10, lower parallel pole
Plate, 11, chip, 12, stainless steel materials, 13, Teflon（PTFE）Coating, 14, aluminium alloy lining armoured plate, 15, aluminium alloy tight
Firmware.
Specific embodiment
As shown in figure 1, plasma etching（RIE）Schematic diagram is corroded in technological reaction chamber.1st, represent process chemistry gas access；
2nd, it is technological reaction cavity；3rd, it is upper parallel electrode plate；4th, it is RF radio-frequency power supply；5th, represent that F, Cl that chemical gas produce are free
Base may be to the corrosion of cavity；6th, represent that producing metal ion separates out because of the corrosion of cavity and pollute；7th, chemical gas are represented
F, Cl free radical producing, the etching to silicon chip；8th, it is plasma；9th, it is vacuum pump；10th, it is lower parallel electrode plate；11st, it is
Chip.4 high frequency voltages of RF radio-frequency power supply are added on parallel electrode plate 3,10, low-pressure chemical vapor electric discharge in cavity is produced etc.
Gas ions.This have chemically active plasma 8, is generally produced by chlorine and carbon fluorine gas discharge, it does not contain only
Electronics, ion, also substantial amounts of living radical, such as Cl, F, Cl-, F- etc..F, Cl free radical 7 that these chemical gas produce
In the presence of plasma arc voltage, bombard exposed chip 11 surface thus anisotropic etching to chip 11.On the other hand, exist
When technique is carried out, cavity is in plasma, and F, Cl free radical that chemical gas produce may be to corrosion 5 meeting of cavity and chamber
The reaction such as Fe of wall metal is gone forward side by side and is gone in atmosphere, and Fe ion produces metal ion precipitation because of the corrosion of cavity and pollution 6 is attached
In substrate surface, fatal metal ion pollution is produced to substrate.
As shown in Fig. 2 RIE technological reaction cavity of the prior art adopts single aluminium alloy castings, it is overall emptying
Machining molding, processing is cumbersome.Install with carrier plate transmission, gas distribution, vacuum suction, vacuum detecting, ion source
Many machining feature be not the present invention main improvement, therefore not on schematic diagram completely represent.
As shown in Figure 3,4, the reaction chamber structural representation of the present invention.Cavity main structure is assembled by polylith stainless steel materials 12
It is welded.The surface spraying plating teflon coatings 13 of stainless steel materials 12.In order to strengthen teflon coatings 13 and stainless steel materials
The adhesion on 12 surfaces, stainless steel materials 12 surface needs blasting treatment.Through the teflon coatings 13 of hot setting, can be effectively anti-
The only chemical attack to stainless steel materials 12 surface for the process activity gas.The dismountable aluminium alloy of teflon coatings 13 surface inserting
Liner armoured plate 14.Aluminium alloy lining armoured plate 14 can be directly aluminium sheet, or surface is in the aluminum that deep oxidation is processed
Lining armoured plate.Socket type is made at aluminium alloy lining armoured plate 14 edge, and overlap joint each other does not have vertical straight joint, so can have
Effect stops the direct bombardment to teflon coatings 13 for the high energy particle.Aluminium alloy lining armoured plate 14, by aluminum alloy fastener 15,
It is fixed on stainless steel materials 12.If aluminium alloy lining armoured plate 14 needs cleaning or changes, dismountable aluminum alloy fastener 15,
Thus convenient dismounting aluminium alloy lining armoured plate 14.The aluminium alloy lining armoured plate of the present invention has corrosion resistance, can effectively stop
The bombardment to coating for the high energy particle, and metal ion pollution will not be caused to silicon chip.
Above content is that the further description made is it is impossible to recognize to the present invention with reference to specific preferred implementation
Determine the present invention be embodied as be confined to solar energy dry method making herbs into wool field.For correlations such as liquid crystal display, electronics IC manufactures
（RIE）Etching apparatus, and without departing from the inventive concept of the premise, the series of products of derivation, for example possess and closed with fluorination
The vacuum coating of the plasma source strengthening of thing automatic cleaning chamber function（PECVD）Cavity, all should be considered as belonging to the present invention, institute
The scope of patent protection that the claims submitted to determine.
Claims (4)
1. a kind of cavity body structure of the reaction chamber of solaode dry method process for etching, is characterized in that,
This chamber body is welded by polylith stainless steel materials assembly, the surface spraying plating teflon coatings of stainless steel materials, special
Fluorine dragon coating surface inlays dismountable aluminium alloy lining armoured plate.
2. the cavity body structure of the reaction chamber of solaode dry method process for etching according to claim 1, is characterized in that,
Described teflon coatings are PTFE, PFA, or FEP material.
3. the cavity body structure of the reaction chamber of solaode dry method process for etching according to claim 1, is characterized in that,
Described stainless steel materials surface is through blasting treatment.
4. the cavity body structure of the reaction chamber of solaode dry method process for etching according to claim 1, is characterized in that,
Described aluminium alloy lining armoured plate is the aluminium sheet or surface aluminum liner armoured plate through depth anodized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510396125.5A CN104934505B (en) | 2015-07-08 | 2015-07-08 | A kind of cavity body structure of the reaction chamber of solaode dry method process for etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510396125.5A CN104934505B (en) | 2015-07-08 | 2015-07-08 | A kind of cavity body structure of the reaction chamber of solaode dry method process for etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104934505A CN104934505A (en) | 2015-09-23 |
| CN104934505B true CN104934505B (en) | 2017-03-01 |
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| CN108054245A (en) * | 2018-01-11 | 2018-05-18 | 常州比太黑硅科技有限公司 | A kind of dry method etching device technological reaction chamber |
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| CN101207001B (en) * | 2006-12-22 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| US9598761B2 (en) * | 2009-05-26 | 2017-03-21 | The Gillette Company | Strengthened razor blade |
| CN204732430U (en) * | 2015-07-08 | 2015-10-28 | 常州比太科技有限公司 | A kind of cavity body structure of reaction chamber of solar cell dry method process for etching |
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