CN104934353A - Conveying system, reaction chamber and semiconductor processing equipment - Google Patents
Conveying system, reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN104934353A CN104934353A CN201410100290.7A CN201410100290A CN104934353A CN 104934353 A CN104934353 A CN 104934353A CN 201410100290 A CN201410100290 A CN 201410100290A CN 104934353 A CN104934353 A CN 104934353A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a conveying system, a reaction chamber and semiconductor processing equipment. The conveying system comprises a conveying device and a gate. The conveying device is provided with a conveying channel which is communicated with the reaction chamber. The conveying channel is used as the channel for conveying processed workpieces into or out of the reaction chamber. The gate is used for opening or closing the conveying channel. The gate is arranged at the end, which is communicated with the reaction chamber, of the conveying channel. Furthermore the gate opens or closes the conveying channel in an overturning manner. The conveying system provided by the invention can prevent diffusion of process gas into the conveying channel, thereby preventing an eddy phenomenon of the process gas at the central area of the reaction chamber caused by flow speed reduction, improving distribution uniformity of the process gas in the reaction chamber and furthermore improving process quality.
Description
Technical field
The invention belongs to semiconductor processing technology field, be specifically related to a kind of transmission system, reaction chamber and semiconductor processing equipment.
Background technology
Silicon epitaxy equipment is for the production of silicon epitaxial wafer, and its operation principle is specially: the compound carrying silicon on the substrate of high temperature (> 1100 DEG C), and utilizes hydrogen (H
2) on substrate, separate out silicon by reduction reaction.In actual applications, in order to the internal environment preventing external environment from affecting reaction chamber, thus affect processing quality, usually will ensure in technical process that reaction chamber seals.
Fig. 1 is the structural representation of existing silicon epitaxy equipment.Fig. 2 is the left view of the silicon epitaxy equipment shown in Fig. 1.See also Fig. 1 and Fig. 2, silicon epitaxy equipment comprises reaction chamber 10, bogey 11, transmitting device 12 and the family of power and influence 15, and bogey 11 is arranged on the bottom of reaction chamber 10, for carrying workpiece to be machined S; Transmitting device 12 is specially flange, and transmitting device 12 is provided with the transmission channel 14 be connected with reaction chamber 10, in order to the passage as transmission workpiece to be machined S; And, transmitting device 12 is also provided with air inlet, in order to the process gas needed for delivery technology in reaction chamber 10, and, the quantity of air inlet is multiple, and arrange in the horizontal direction, multiple air inlet comprises multiple air inlet 12a of the central area delivery technology gas to reaction chamber 10, and multiple air inlet 12b and 12c of fringe region delivery technology gas to reaction chamber 10; The family of power and influence 15 is arranged on the port be not connected with reaction chamber 10 of transmitting device 12, and can rise along this port or decline, in order to opening and closing of fault transmission channel 14; In addition, position relative with air inlet on the chamber wall of reaction chamber 10 arranges exhaust outlet 13, for by the waste gas produced in technical process in reaction chamber 10 and do not complete technique process gas discharge reaction chamber 10.
The course of work adopting above-mentioned reaction chamber to carry out technique is described below in detail: particularly, comprise the following steps, S1, the family of power and influence's 15 times general who has surrendered's transmission channels 14 are opened, the workpiece to be machined S not completing technique imports in reaction chamber 10 via this transmission channel 14 by manipulator, manipulator unloaded afterwards spreads out of reaction chamber 10 via this transmission channel 14, and the family of power and influence 15 rises and transmission channel 14 to be closed; S2, via air inlet 12a, 12b and 12c to delivery technology gas in reaction chamber 10, to complete technique on workpiece to be machined S; S3, the family of power and influence's 15 times general who has surrendered's transmission channels 14 are opened, and the workpiece to be machined S completing technique is spread out of reaction chamber 10 via this transmission channel 14 by manipulator, and the family of power and influence 15 rises and transmission channel 14 to be closed afterwards, and single process terminates.
But, above-mentioned silicon epitaxy equipment is adopted inevitably to there is following problem in actual applications, that is: because the family of power and influence 15 is arranged on the port be not connected with reaction chamber 10 of transmitting device 12, transmission channel 14 is connected with reaction chamber 10 all the time in technical process, and due to the close transmission channel 14 of multiple air inlet 12a of the central area delivery technology gas to reaction chamber 10, this process gas that central area to reaction chamber 10 is carried easily diffuses in transmission channel 14, thus the flow velocity of the process gas of the central area of reaction chamber 10 is easily caused to reduce, and easily there is vortex phenomenon, as shown in Figure 3 and Figure 4, thus cause the lack of homogeneity of process gas in reaction chamber, and then cause processing quality poor.
Summary of the invention
The present invention is intended to solve the technical problem existed in prior art, provide a kind of transmission system, reaction chamber and semiconductor processing equipment, it can avoid the reduction of the flow velocity of the process gas of the central area of reaction chamber to occur vortex phenomenon, thus the uniformity of process gas distribution in reaction chamber can be improved, and then processing quality can be improved.
The invention provides a kind of transmission system, comprise transmitting device and the family of power and influence, described transmitting device is provided with the transmission channel be connected with reaction chamber, described transmission channel is used for moving into as workpiece to be machined or shifting out the passage of described reaction chamber, the described family of power and influence is used for transmission channel described in opening and closing of fault, the described family of power and influence is arranged on the port be connected with described reaction chamber of described transmission channel, and the described family of power and influence adopt upset mode opening and closing of fault described in transmission channel.
Wherein, also comprise slideway, described slideway comprises stiff end and elongated end, and described stiff end is fixed on above or below the port be connected with described reaction chamber of described transmission channel, and described elongated end extends to the direction away from described port from described stiff end; The described family of power and influence has rotating shaft, the connection that described rotating shaft and described slideway can slide between described stiff end and elongated end.
Wherein, the described family of power and influence slides into described elongated end from described stiff end along described slideway by described rotating shaft when opening described transmission channel, and turn to precalculated position clockwise or counterclockwise around described rotating shaft; The described family of power and influence when closing described transmission channel around described rotating shaft counterclockwise or dextrorotation go to the position parallel with described port, and slide into described stiff end from described elongated end along described slideway by described rotating shaft.
Wherein, described slideway is horizontally disposed with, the elongated end of described slideway from described stiff end to the direction horizontal-extending away from described port.
Wherein, between the described family of power and influence and the end face around described port, be provided with seal, in order to seal gap therebetween when the described family of power and influence closes described transmission channel.
Wherein, described seal comprises sealing ring.
Wherein, also comprise control switch, described control switch is for controlling the described family of power and influence by described transmission channel opening and closing of fault.
The present invention also provides a kind of reaction chamber, comprise transmission system, for being imported in described reaction chamber by the workpiece to be machined not completing technique, and spread out of from described reaction chamber by the workpiece to be machined completing technique, described transmission system adopts above-mentioned transmission system provided by the invention.
Wherein, the transmitting device of described transmission system is also provided with air feeding in center mouth and edge air inlet, and described air feeding in center mouth is arranged on the top of transmission channel on described transmitting device, described air feeding in center mouth is used for the central area delivery technology gas to described reaction chamber; Described edge air inlet is used for the fringe region delivery technology gas to described reaction chamber.
The present invention also provides a kind of semiconductor processing equipment, comprises reaction chamber, and described reaction chamber adopts above-mentioned reaction chamber provided by the invention.
The present invention has following beneficial effect:
Transmission system provided by the invention, it is by the port be connected with the reaction chamber family of power and influence being arranged on transmission channel, and the family of power and influence adopts the mode opening and closing of fault transmission channel of upset, process gas in technical process can be avoided to diffuse in transmission channel, thus the flow velocity of the process gas of the central area of reaction chamber can be avoided to reduce and to occur vortex phenomenon, thus the uniformity of the process gas distribution in reaction chamber can be improved, and then processing quality can be improved.
Reaction chamber provided by the invention, it adopts transmission system provided by the invention, can improve the uniformity of process gas distribution in reaction chamber, thus can improve processing quality.
Semiconductor processing equipment provided by the invention, it adopts reaction chamber provided by the invention, can improve the uniformity of process gas distribution in reaction chamber, thus can improve processing quality, and then can improve the yields of semiconductor processing equipment.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing silicon epitaxy equipment;
Fig. 2 is the left view of the silicon epitaxy equipment shown in Fig. 1;
Fig. 3 be Ansys software simulation reaction chamber in gas flow rate polar plot;
Fig. 4 is the reaction chamber indoor gas trajectory diagram of Ansys software simulation;
The structural representation of the transmission system that Fig. 5 provides for first embodiment of the invention;
Fig. 6 for adopt the transmission system that provides of first embodiment of the invention to carry out Ansys software simulation reaction chamber in gas flow rate polar plot;
The reaction chamber indoor gas trajectory diagram of Fig. 7 for adopting the transmission system that provides of first embodiment of the invention to carry out Ansys software simulation;
The structural representation of the transmission system that Fig. 8 provides for second embodiment of the invention;
Fig. 9 is that the family of power and influence is at the process schematic opening transmission channel;
Figure 10 is the process schematic of the family of power and influence at closing transmission passage;
The another kind of structural representation of the transmission system that Figure 11 provides for second embodiment of the invention;
Figure 12 is the structural representation of reaction chamber provided by the invention; And
Figure 13 is the left view of the reaction chamber in Figure 12.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, transmission system provided by the invention, reaction chamber and semiconductor processing equipment are described in detail.
The structural representation of the transmission system that Fig. 5 provides for first embodiment of the invention.Refer to Fig. 5, transmission system provided by the invention comprises transmitting device 20 and the family of power and influence 21, transmitting device is provided with the transmission channel 201 be connected with reaction chamber, transmitting device 20 can be flange particularly, transmission channel 201 is for moving into as workpiece to be machined or shifting out the passage of reaction chamber, the family of power and influence 21 is for opening and closing of fault transmission channel 201, the family of power and influence 21 is arranged on the port be connected with reaction chamber of transmission channel 201 (as in Fig. 5, the right side port of transmission channel 201), and the family of power and influence 21 adopts the mode opening and closing of fault transmission channel 201 of upset.
In the present embodiment, one end of the family of power and influence 21 is fixed on the below (as shown in Figure 5) of the port be connected with reaction chamber of transmission channel 201 by rotating shaft 22, the family of power and influence 21 turn to precalculated position when opening transmission channel 201 counterclockwise around rotating shaft 22, the family of power and influence 21 position when precalculated position is defined as transmission channel 201 opening, in the present embodiment, the position at precalculated position is specially the horizontal sextant angle of the family of power and influence 21 when being 0 degree place.Easy understand, owing to adopting the relatively existing elevation type family of power and influence of the family of power and influence 21 of the mode of upset, the space of reaction chamber in the vertical direction is not too much limited, thus can not need too much to consider the space of vertical direction in reaction chamber, thus the applicability of transmission system can be improved.
In actual applications, when one end of the family of power and influence 21 to be fixed on the top of the port be connected with reaction chamber of transmission channel 201 by rotating shaft 22, the family of power and influence 21 turn to precalculated position when opening transmission channel 201 clockwise around rotating shaft 22.
Preferably, seal is provided with between the family of power and influence 21 and the end face around port, in order to seal gap therebetween when the family of power and influence 21 closes transmission channel 201, this not only can prevent the leakage of the process gas in reaction chamber from impacting the distribution of process gas in reaction chamber, thus can avoid having an impact to processing quality; And the waste of process gas can be prevented, thus can production cost be reduced, increase economic efficiency.Further preferably, seal comprises sealing ring.
In the present embodiment, transmission system also comprises control switch, control switch is for controlling the family of power and influence by transmission channel 201 opening and closing of fault, particularly, manual or automatic mode can be adopted to control control switch, with realize controls transfer passage 20 opening and closing of fault, such as, control switch comprises traction switch, and manual or automatic mode controls control switch.Because the execution mode of control switch is a lot, at this, do not limit the embodiment of control switch, as long as can realize controlling the mode opening and closing of fault transmission channel 201 that the family of power and influence 21 adopts upset.
Fig. 6 for adopt the transmission system that provides of first embodiment of the invention to carry out Ansys software simulation reaction chamber in gas flow rate polar plot; The reaction chamber indoor gas trajectory diagram of Fig. 7 for adopting the transmission system that provides of first embodiment of the invention to carry out Ansys software simulation; See also Fig. 6, Fig. 7, Fig. 3 and Fig. 4, contrasted by Fig. 6 and Fig. 3 known, the transmission system adopting first embodiment of the invention to provide can improve the uniformity of process gas flow rates in reaction chamber; Fig. 7 and Fig. 4 is contrasted known, the transmission system adopting first embodiment of the invention to provide can improve the uniformity of airflow field in reaction chamber, therefore, the transmission system adopting first embodiment of the invention to provide can improve the uniformity of the process gas distribution in reaction chamber.
In sum, the transmission system that the present embodiment provides, it is by the port be connected with the reaction chamber family of power and influence 21 being arranged on transmission channel 201, and the family of power and influence 21 adopts the mode opening and closing of fault transmission channel 201 of upset, process gas in technical process can be avoided to diffuse in transmission channel 201, thus the flow velocity of the process gas of the central area of reaction chamber can be avoided to reduce and to occur vortex phenomenon, thus the uniformity of the process gas distribution in reaction chamber can be improved, and then processing quality can be improved.
The structural representation of the transmission system that Fig. 8 provides for second embodiment of the invention.Refer to Fig. 8, compared with the transmission system that the transmission system that the present embodiment provides and above-mentioned first embodiment provide, comprise transmitting device 20 and the family of power and influence 21 equally, because the 26S Proteasome Structure and Function of transmitting device 20 and the family of power and influence 21 there has been detailed description in the above-described first embodiment, do not repeat them here.
Difference between the transmission system that the transmission system only provided the present embodiment below and above-mentioned first embodiment provide is described in detail.Particularly, the transmission system that the present embodiment provides also comprises slideway 23, slideway 23 comprises stiff end 231 and elongated end 232, stiff end 231 is fixed on above or below the port be connected with reaction chamber of transmission channel 201, as shown in Figure 8, stiff end 231 is fixed on below the port be connected with reaction chamber of transmission channel 201; Elongated end 232 self-retaining end 231 extends to the direction away from port; The connection that the rotating shaft 22 of the family of power and influence 21 and slideway 23 can slide between stiff end 231 and elongated end 232.
The family of power and influence 21 is when opening transmission channel 201, elongated end 232 is slid into along slideway 23 by rotating shaft 22 self-retaining end 231, and turn to precalculated position clockwise or counterclockwise around rotating shaft 22, and wherein, the position at place when the horizontal sextant angle that precalculated position is specially the family of power and influence 21 is 0 degree.In the present embodiment, as shown in Figure 9, for the family of power and influence 21 is at the process schematic opening transmission channel 201, two steps are comprised, wherein, step (a), the family of power and influence 21 slides into elongated end 232 by rotating shaft 22 self-retaining end 231 along slideway 23; Step (b), the family of power and influence 21 turns over clockwise around rotating shaft 22 and turn 90 degrees to precalculated position.
The family of power and influence 21 when closing transmission passage 201, around rotating shaft 22 counterclockwise or dextrorotation go to the position parallel with port, and slide into stiff end 231 from elongated end 232 along slideway 23 by rotating shaft 22.In the present embodiment, as shown in Figure 10, for the family of power and influence 21 is at the process schematic of closing transmission passage 201, comprise two steps, wherein, step (a), the family of power and influence 21 turn to the position parallel with port counterclockwise around rotating shaft 22, that is, the position when horizontal sextant angle of the family of power and influence 21 is 90 degree; Step (b), the family of power and influence 21 slides into stiff end 231 from elongated end 232 along slideway 23 by rotating shaft 22, the family of power and influence 21 can be realized can seal mutually with the end face be positioned at around its place port simultaneously, this is not with when arranging slideway, the family of power and influence 21 and its place port away from compared with the impaired serious and sealing effectiveness difference that causes of the seal between rotating shaft 22 position, can improve the family of power and influence 21 with its sealing effectiveness between the ports, thus the quality of transmission system can be improved.
Easy understand, in the present embodiment, because the port place plane be connected with reaction chamber of transmission channel 201 is mutually vertical with horizontal plane, therefore, the position when family of power and influence 21 is 90 degree when closing transmission passage 201 around rotating shaft 22 to horizontal sextant angle.But the present invention is not limited thereto, in actual applications, if meet the family of power and influence 21 when closing transmission passage 201 around rotating shaft 22 counterclockwise or dextrorotation go to the position parallel with port.
In the present embodiment, preferably, slideway 23 is horizontally disposed with, the elongated end 232 self-retaining end 231 of slideway 23 is to the direction horizontal-extending of the port be connected with reaction chamber away from transmission channel 201, this makes the family of power and influence 21 only move horizontally along slideway 23, do not carry out the movement on vertical direction, thus can save the power output of the driver element driving the family of power and influence 21 movement to a certain extent, thus can increase economic efficiency.But the present invention is not limited thereto, in actual applications, slideway 23 can also adopt other set-up mode, such as, as shown in figure 11, in this case, the process that the family of power and influence 21 closes or opens in the process of transmission channel 201 and the present embodiment is similar, does not repeat them here; Certainly, slideway 23 not only can adopt the family of power and influence to be the slideway of straight line along the motion track of slideway 23, and the family of power and influence also can be adopted to be the slideway that broken line, curve or broken line and curve serial connection are formed along the motion track of slideway 23.
It should be noted that, in the present embodiment, occupying the reaction chamber interior space is caused in order to avoid the family of power and influence 21 is arranged on the port be connected with reaction chamber of transmission channel 201, end face around this port is provided with breach 24, is positioned at this breach 24 with the fringe region correspondence of the family of power and influence 21 when transmission channel 201 is closed.
As another technical scheme, the present invention also provides a kind of reaction chamber, comprise transmission system, for the workpiece to be machined not completing technique is imported in reaction chamber, and the workpiece to be machined autoreaction chamber completing technique is spread out of, wherein, transmission system adopts the transmission system that first embodiment of the invention or the second embodiment provide.
Figure 12 is the structural representation of reaction chamber provided by the invention.Figure 13 is the left view of the reaction chamber in Figure 12.See also Figure 12 and Figure 13, the transmitting device 20 of transmission system is also provided with air feeding in center mouth 31 and edge air inlet 32, air feeding in center mouth 31 is arranged on the top of transmission channel 201 on transmitting device 20, and air feeding in center mouth 31 is for the central area delivery technology gas to reaction chamber 30; Edge air inlet 32 is for the fringe region delivery technology gas to reaction chamber 30.
The reaction chamber that the present embodiment provides, its transmission system adopting first embodiment of the invention or the second embodiment to provide, can improve the uniformity of process gas distribution in reaction chamber, thus can improve processing quality.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, comprises reaction chamber, the reaction chamber that reaction chamber above-described embodiment provides.
Wherein, semiconductor processing equipment comprises silicon epitaxy equipment.
The semiconductor processing equipment that the present embodiment provides, its reaction chamber adopting the above embodiment of the present invention to provide, the uniformity of process gas distribution in reaction chamber can be improved, thus can processing quality be improved, and then the yields of semiconductor processing equipment can be improved.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, when not departing from principle of the present invention and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a transmission system, comprise transmitting device and the family of power and influence, described transmitting device is provided with the transmission channel be connected with reaction chamber, described transmission channel is used for moving into as workpiece to be machined or shifting out the passage of described reaction chamber, the described family of power and influence is used for transmission channel described in opening and closing of fault, it is characterized in that, the described family of power and influence is arranged on the port be connected with described reaction chamber of described transmission channel, and the described family of power and influence adopt upset mode opening and closing of fault described in transmission channel.
2. transmission system according to claim 1, it is characterized in that, also comprise slideway, described slideway comprises stiff end and elongated end, described stiff end is fixed on above or below the port be connected with described reaction chamber of described transmission channel, and described elongated end extends to the direction away from described port from described stiff end;
The described family of power and influence has rotating shaft, the connection that described rotating shaft and described slideway can slide between described stiff end and elongated end.
3. transmission system according to claim 2, it is characterized in that, the described family of power and influence slides into described elongated end from described stiff end along described slideway by described rotating shaft when opening described transmission channel, and turn to precalculated position clockwise or counterclockwise around described rotating shaft;
The described family of power and influence when closing described transmission channel around described rotating shaft counterclockwise or dextrorotation go to the position parallel with described port, and slide into described stiff end from described elongated end along described slideway by described rotating shaft.
4. transmission system according to claim 2, is characterized in that, described slideway is horizontally disposed with, the elongated end of described slideway from described stiff end to the direction horizontal-extending away from described port.
5. transmission system according to claim 1, is characterized in that, between the described family of power and influence and the end face around described port, be provided with seal, in order to seal gap therebetween when the described family of power and influence closes described transmission channel.
6. transmission system according to claim 5, is characterized in that, described seal comprises sealing ring.
7. transmission system according to claim 1, is characterized in that, also comprises control switch, and described control switch is for controlling the described family of power and influence by described transmission channel opening and closing of fault.
8. a reaction chamber, comprise transmission system, for the workpiece to be machined not completing technique is imported in described reaction chamber, and the workpiece to be machined completing technique is spread out of from described reaction chamber, it is characterized in that, described transmission system adopts the transmission system described in claim 1-7 any one.
9. reaction chamber according to claim 8, is characterized in that, the transmitting device of described transmission system is also provided with air feeding in center mouth and edge air inlet, and described air feeding in center mouth is arranged on the top of transmission channel on described transmitting device,
Described air feeding in center mouth is used for the central area delivery technology gas to described reaction chamber; Described edge air inlet is used for the fringe region delivery technology gas to described reaction chamber.
10. a semiconductor processing equipment, comprises reaction chamber, it is characterized in that, described reaction chamber adopts the reaction chamber described in claim 8-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410100290.7A CN104934353B (en) | 2014-03-18 | 2014-03-18 | Transmission system, reaction chamber and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410100290.7A CN104934353B (en) | 2014-03-18 | 2014-03-18 | Transmission system, reaction chamber and semiconductor processing equipment |
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| CN104934353A true CN104934353A (en) | 2015-09-23 |
| CN104934353B CN104934353B (en) | 2018-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410100290.7A Active CN104934353B (en) | 2014-03-18 | 2014-03-18 | Transmission system, reaction chamber and semiconductor processing equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411247A (en) * | 2022-01-21 | 2022-04-29 | 深圳市纳设智能装备有限公司 | Epitaxial reaction equipment |
| CN114717653A (en) * | 2021-12-24 | 2022-07-08 | 深圳市纳设智能装备有限公司 | Coating equipment |
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| CN1910308A (en) * | 2004-01-06 | 2007-02-07 | 马特森技术公司 | Advanced multi-pressure workpiece processing |
| CN101151709A (en) * | 2005-03-30 | 2008-03-26 | 松下电器产业株式会社 | Plasma doping method and plasma processing equipment |
| US20080170970A1 (en) * | 2007-01-12 | 2008-07-17 | Toru Ito | Vacuum Processing Apparatus and Vacuum Processing Method Using the Same |
| JP2009059934A (en) * | 2007-08-31 | 2009-03-19 | Nuflare Technology Inc | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
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| JP2000349031A (en) * | 1999-05-27 | 2000-12-15 | Applied Materials Inc | Semiconductor manufacturing device |
| CN1910308A (en) * | 2004-01-06 | 2007-02-07 | 马特森技术公司 | Advanced multi-pressure workpiece processing |
| CN101151709A (en) * | 2005-03-30 | 2008-03-26 | 松下电器产业株式会社 | Plasma doping method and plasma processing equipment |
| US20080170970A1 (en) * | 2007-01-12 | 2008-07-17 | Toru Ito | Vacuum Processing Apparatus and Vacuum Processing Method Using the Same |
| JP2009059934A (en) * | 2007-08-31 | 2009-03-19 | Nuflare Technology Inc | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717653A (en) * | 2021-12-24 | 2022-07-08 | 深圳市纳设智能装备有限公司 | Coating equipment |
| CN114717653B (en) * | 2021-12-24 | 2023-08-15 | 深圳市纳设智能装备有限公司 | Coating equipment |
| CN114411247A (en) * | 2022-01-21 | 2022-04-29 | 深圳市纳设智能装备有限公司 | Epitaxial reaction equipment |
| WO2023138224A1 (en) * | 2022-01-21 | 2023-07-27 | 深圳市纳设智能装备有限公司 | Epitaxial reaction device |
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| CN104934353B (en) | 2018-01-19 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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