CN104916747A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
- Publication number
- CN104916747A CN104916747A CN201410094885.6A CN201410094885A CN104916747A CN 104916747 A CN104916747 A CN 104916747A CN 201410094885 A CN201410094885 A CN 201410094885A CN 104916747 A CN104916747 A CN 104916747A
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- CN
- China
- Prior art keywords
- light
- layer
- emitting component
- conductivity type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 238000003475 lamination Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting component which comprises a substrate; a light-emitting lamination layer which is arranged on the substrate and can emit light of infrared ray (IR) wavelength; and a semiconductor window layer which is formed by AlGaInP-series materials and is arranged between the substrate and the light-emitting lamination layer.
Description
Technical field
The present invention relates to a kind of light-emitting component, especially relate to a kind of infrared light-emitting component.
Background technology
Light-emitting diode (Light-Emitting Diode; The good photoelectric characteristic such as LED) have low power consuming, low heating, operation lifetime is long, shockproof, volume is little, reaction speed is fast and the optical wavelength that exports is stable, is therefore applicable to various uses.
Wherein infrared light-emitting diode (Infrared LED; IR LED) application more and more wider, be applied to remote controller and monitor from tradition, more develop into being applied to intelligent mobile phone and contact panel recently.Wherein because the relatively large infrared light-emitting diode of each contact panel relative usage, price also requires lower so be applied in relative to other, therefore the cost reducing infrared light-emitting diode has its necessity.
Fig. 1 is the profile of an existing infrared light-emitting component, and as shown in Figure 1, this light-emitting component comprises a permanent substrate 101, sequentially there is a luminous lamination 102 above it from top to bottom, one metallic reflector 103, barrier layer 104, and one engages (bonding) structure 105.In addition, one first electrode 106E1 and extension electrode 106E1 ' thereof is arranged on luminous lamination 102, and one second electrode 106E2 is arranged on permanent substrate 101.First electrode 106E1 and extension electrode 106E1 ' thereof and the second electrode 106E2 is in order to delivered current.Luminous lamination 102 can send the light of an infrared ray wave band.In manufacture craft, its luminous lamination 102 of this kind of existing infrared light-emitting component is grown up (not shown) in growth substrate originally, the luminous lamination 102 of this separations of recycling connected structure 105 adaptogen and permanent substrate 101, therefore before both engage, first can form metallic reflector 103 rejoin after luminous lamination 102.Such as, but as above-mentioned, in application-specific, when the application of contact panel requires low cost, above-mentioned joint manufacture craft and metallic reflector 103 etc. are all the main causes causing high cost.In addition, in contact panel application, also require that preferably side bright dipping is to reach larger rising angle, practical application has found above-mentioned existing infrared light-emitting component is difficult to the requirement met in this respect.
Summary of the invention
For solving the problem, the present invention discloses a kind of light-emitting component.Light-emitting component disclosed in this invention comprises: a substrate; One luminous lamination is positioned at the top of substrate, can send the light of an infrared ray (IR) wavelength; And semiconductor window layers, be made up of the material of AlGaInP series, between substrate and luminous lamination.
Accompanying drawing explanation
Figure 1 shows that an existing light-emitting component.
Figure 2 shows that the light-emitting component of first embodiment of the invention.
Figure 3 shows that the second electrode pattern in the light-emitting component of first embodiment of the invention.
Figure 4 shows that another pattern of the second electrode in the light-emitting component of first embodiment of the invention.
Symbol description
101 permanent substrates
102 luminous laminations
103 metallic reflectors
104 barrier layers
105 connected structures
106E1 first electrode
106E1 ' (the first electrode) extension electrode
106E2 second electrode
20 substrates
21 resilient coatings
22 semiconductor window layers
23 luminous laminations
231 first conductivity type semiconductor layer
232 luminescent layers
232b
1, 232b
2... 232
bnbarrier layer
232w
1, 232w
2... 232w
n-1well layer
233 second conductivity type semiconductor layer
24 lateral light removing layers
25 contact layers
26 first electrodes
26a (the first electrode) extension electrode
27 second electrodes
S1 base lower surface
S2 substrate side surfaces
S3 light-emitting component upper surface
Embodiment
Fig. 2 is the light-emitting component of first embodiment of the invention.As shown in Figure 2, this light-emitting component comprises: a substrate 20; One luminous lamination 23 is positioned at the top of substrate 20, can send the light of an infrared ray (IR) wavelength; And semiconductor window layers 22, be made up of the material of AlGaInP series, between substrate 20 and luminous lamination 23.Wherein, substrate 20 such as comprises GaAs (GaAs) substrate.Above-mentioned infrared ray (IR) wavelength is between about between 750nm to 1100nm, and in one embodiment, infrared ray (IR) wavelength is greater than 900nm, such as, be 940nm.Semiconductor window layers 22 is a simple layer structure and directly contacts with luminous lamination 23.Manufacture craft after formation semiconductor window layers 22, namely can adjust the gaseous species passed into or ratio, then to form luminous lamination 23 on identical board.In one embodiment, semiconductor window layers 22 comprises (Al
xga
1-x)
0.5in
0.5p, wherein x is 0.1 ~ 1.It should be noted that luminous lamination 23 has a first refractive rate n
1, semiconductor window layers 22 has one second refractive index n
2, first refractive rate n
1be greater than the second refractive index n
2more than at least 0.2.Therefore, for the light of the Infrared wavelength that above-mentioned luminous lamination 23 sends, advanced to low-refraction by high index of refraction between luminous lamination 23 and semiconductor window layers 22, add the first refractive rate n of luminous lamination 23
1with the second refractive index n of semiconductor window layers 22
2between difference, easily total reflection is there is in the light of the Infrared wavelength that luminous lamination 23 is sent in semiconductor window layers 22, namely semiconductor window layers 22 provides the mirror function of a simple layer structure, and relative to General Decentralized formula Bragg reflection structure (DBR), it provides the reflection function of preferably side direction.General Decentralized formula Bragg reflection structure (DBR) needs the tens of layers of reflectivity that just can acquire a certain degree, and its reflection function is only limitted to the angle of forward certain limit, is generally to press from both sides the light of 0 degree ~ 17 degree with the normal of catoptric arrangement; And the present embodiment can reflect the light pressing from both sides 50 degree ~ 90 degree with the normal of semiconductor window layers 22 by means of only the semiconductor window layers 22 of simple layer structure, there is provided preferably side bright dipping to form larger rising angle, and improve because light takes out, thus Integral luminous power promote.In the test of reality, test sends the light-emitting component of 850nm and 940nm respectively, and the luminous lamination 23 of the embodiment of the present invention adopts aluminum gallium arsenide (AlGaAs) in the first conductivity type semiconductor layer 231, has first refractive rate n
1about 3.4, semiconductor window layers 22 adopts (Al
0.6ga
0.4)
0.5in
0.5p, has the second refractive index n
2about 2.98, two refractive index value differences about 3.4, its identical with other conditions but that only semiconductor window layers 22 uses aluminum gallium arsenide (AlGaAs) (refractive index about 3.4) instead light-emitting component is compared, the luminous power of embodiment of the present invention 850nm light-emitting component is compared and is thus promoted to 4.91mW by 4.21mW, increases about 17%; The luminous power of embodiment of the present invention 940nm light-emitting component is compared and is thus promoted to 5.27mW by 5.06mW, increases about 4%.In addition, in manufacture craft or on cost, semiconductor window layers 22 directly contacts with luminous lamination 23, and is a simple layer structure, therefore relative to General Decentralized formula Bragg reflection structure, manufacture craft more simplifies and cost is lower.On thickness, in one embodiment, the thickness of semiconductor window layers 22 is less than 1 μm can good reflecting effect.
Luminous lamination 23 comprises one first conductivity type semiconductor layer 231 and is positioned on semiconductor window layers 22; One active layer 232 is positioned on the first conductivity type semiconductor layer 231; And one second conductivity type semiconductor layer 233 be positioned on active layer 232, wherein the first conductivity type semiconductor layer 231 directly contacts with semiconductor window layers 22.First conductivity type semiconductor layer 231, active layer 232 and the second conductivity type semiconductor layer 233 are formed by III-V material.First conductivity type semiconductor layer 231 and the second conductivity type semiconductor layer 233 electrically different, such as the first conductivity type semiconductor layer 231 is n-type semiconductor layer, and the second conductivity type semiconductor layer 233 is p-type semiconductor layer, when applying external power source, the first conductivity type semiconductor layer 231 and the second conductivity type semiconductor layer 233 produce charge carrier (electrons) respectively and produce light in active layer 232 compound.In one embodiment, the first conductivity type semiconductor layer 231 is adulterated tellurium (Te) or selenium (Se).In one embodiment, active layer 232 comprises a multiple quantum trap structure (MQW), and this multiple quantum trap structure comprises multiple barrier layer, such as barrier layer 232b
1, 232b
2... 232b
n, and one or more well layer, such as well layer 232w
1, 232w
2... 232w
n-1, have a well layer between two adjacent barrier layers, such as two adjacent barrier layer 232b
1and 232b
2between have a well layer 232w
1.Wherein multiple barrier layer 232b
1, 232b
2... 232b
nin close on barrier layer (the i.e. barrier layer 232b of the first conductivity type semiconductor layer 231 most
1) and close on barrier layer (the i.e. barrier layer 232b of the second conductivity type semiconductor layer 233 most
n) not phosphorous (P), remaining barrier layer (barrier layer 232b
2... 232b
n-1) then phosphorous (P).In one embodiment, well layer 232w
1, 232w
2... 232w
n-1comprise InGaAsP (InGaAs), wherein indium content about 2% ~ 30% and with luminous lamination 23 adjust for the optical wavelength sent, to reach aforementioned ultrared wavelength band.And due to well layer 232w
1, 232w
2... 232w
n-1comprising indium (In) can make lattice constant become large, above-mentioned barrier layer (barrier layer 232b
2... 232b
n-1) in phosphorous (P) lattice constant can be made to diminish and overall lattice constant is adjusted back proper range.In one embodiment, barrier layer 232b
2... 232b
n-1such as comprise phosphatization gallium aluminium arsenic (AlGaAsP).And as above-mentioned, close on barrier layer (the barrier layer 232b of the first conductivity type semiconductor layer 231 most
1) and close on barrier layer (the barrier layer 232b of the second conductivity type semiconductor layer 233 most
n) not phosphorous (P), when its thickness can be made thicker, lattice constant is unlikely to too small; And thicker barrier layer 232b
1and barrier layer 232b
ncan have the alloy in first conductivity type semiconductor layer 231 of closing on and the second conductivity type semiconductor layer 233 and preferably spread barriering effect.In one embodiment, barrier layer 232b
1and barrier layer 232b
nsuch as comprise aluminum gallium arsenide (AlGaAs).
The light-emitting component of first embodiment of the invention also comprises a resilient coating 21 between substrate 20 and semiconductor window layers 22, resilient coating 21 doped silicon (Si), the GaAs (GaAs) of such as doped silicon (Si).As previously mentioned, first conductivity type semiconductor layer 231 is adulterated tellurium (Te) or selenium (Se), and resilient coating 21 doped silicon (Si), so configuration makes light-emitting component have in manufacture craft more to adjust elasticity, such as, be the adjustment of lattice constant.In addition, the light-emitting component of first embodiment of the invention also comprises a lateral light removing layer 24 and is positioned on luminous lamination 23, one contact layer 25 is positioned on lateral light removing layer 24, and one first electrode 26 is arranged on contact layer 25, and one second electrode 27 is arranged on substrate 20.Lateral light removing layer 24 contributes to light and takes out, particularly make side bright dipping increase because thickness increases, therefore its thickness can be relatively thicker, such as about 5 μm to 30 μm, in one embodiment, lateral light removing layer 24 comprises the GaAs (GaAs) of doping zinc (Zn), thickness about 10 μm.Contact layer 25 is in order to form ohmic contact with the first electrode 26 on it, and to reduce resistance value, in one embodiment, contact layer 25 comprises the GaAs (GaAs) of doping zinc (Zn).Lateral light removing layer 24 and contact layer 25 are similarly the configuration that the GaAs (GaAs) comprising zinc (Zn) that adulterate can simplify board in manufacture craft, but should be noted, lateral light removing layer 24 is different from the function of contact layer 25, for forming ohmic contact, zinc (Zn) content in contact layer 25 is more than zinc (Zn) content of lateral light removing layer 24 a lot, could form ohmic contact.First electrode 26 can be provided with extension electrode 26a, to help current spread.When it should be noted that the light of the Infrared wavelength that luminous lamination 23 sends is advanced to substrate 20, may still have part, in semiconductor window layers 22, total reflection does not occur.As previously mentioned, when being engaged in application-specific, larger rising angle may be required, therefore as shown in the figure, in the present embodiment, the second electrode 27 is electrodes of a patterning, comparatively detailed description please refer to the drawing 3 and Fig. 4, when looking viewing (top view) from above, the pattern of the second electrode 27 can be such as latticed (mesh) as Fig. 3, and the substrate 20 that Fig. 3 shows a GaAs (GaAs) is formed with latticed germanium gold (GeAu) second electrode 27; Or as shown in Figure 4, the pattern of the second electrode 27 can be multiple circle, the substrate 20 that Fig. 4 shows a GaAs (GaAs) is formed with germanium gold (GeAu) second electrode 27 of multiple toroidal; Second electrode 27 of patterning like this, for there is not the light of total reflection in semiconductor window layers 22 for, forms scattering center, can increase scattering and make rising angle larger.In addition, optionally the second electrode 27 place is not set at the lower surface S1 of substrate 20 and forms alligatoring (figure does not illustrate) yet, the scattering of light can be increased equally, make light easily from the side bright dipping of substrate 20, even the side S2 of substrate 20 and light-emitting component upper surface S3 does not arrange the first electrode 26 place and can give alligatoring (figure does not illustrate) yet.
Above-described embodiment is only illustrative principle of the present invention and effect thereof, but not for limiting the present invention.Any persond having ordinary knowledge in the technical field of the present invention all when without prejudice to know-why of the present invention and spirit, can modify to above-described embodiment and changes.Therefore the scope of the present invention is listed by the claim of enclosing.
Claims (10)
1. a light-emitting component, comprises:
Substrate;
Luminous lamination, is positioned at the top of this substrate, can sends the light of an infrared ray (IR) wavelength; And
Semiconductor window layers, is made up of the material of AlGaInP series, between this substrate and this luminous lamination.
2. light-emitting component as claimed in claim 1, wherein this substrate comprises GaAs (GaAs) or this infrared ray (IR) wavelength is greater than 900nm.
3. light-emitting component as claimed in claim 1, wherein this semiconductor window layers directly contacts with this luminous lamination or this semiconductor window layers is a simple layer structure.
4. light-emitting component as claimed in claim 1, wherein this luminous lamination has first refractive rate n
1, this semiconductor window layers has the second refractive index n
2, this first refractive rate n
1be greater than this second refractive index n
2more than at least 0.2.
5. light-emitting component as claimed in claim 1, wherein this semiconductor window layers comprises (Al
xga
1-x)
0.5in
0.5p, wherein x is 0.1 ~ 1, or the thickness of this semiconductor window layers is less than 1 μm.
6. light-emitting component as claimed in claim 1, wherein this luminous lamination comprises:
First conductivity type semiconductor layer, is positioned on this semiconductor window layers;
Active layer, is positioned on this first conductivity type semiconductor layer; And
Second conductivity type semiconductor layer, is positioned on this active layer.
7. light-emitting component as claimed in claim 6, wherein this first conductivity type semiconductor layer directly contacts with this semiconductor window layers, or this first conductivity type semiconductor layer is adulterated tellurium (Te) or selenium (Se).
8. light-emitting component as claimed in claim 6, wherein this active layer comprises a multiple quantum trap structure (MQW), this multiple quantum trap structure comprises multiple barrier layer and a well layer is positioned between two adjacent these barrier layers, wherein close on most this barrier layer of this first conductivity type semiconductor layer in the plurality of barrier layer and close on this barrier layer not phosphorous (P) of this second conductivity type semiconductor layer most, remaining this barrier layer phosphorous (P).
9. light-emitting component as claimed in claim 1, also comprise the resilient coating of the GaAs (GaAs) of a doped silicon (Si) between this substrate and this semiconductor window layers, or the bottom electrode of a patterning is positioned under this substrate.
10. light-emitting component as claimed in claim 9, wherein the pattern of this bottom electrode is latticed (mesh) or multiple circle.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410094885.6A CN104916747B (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
| CN201911163403.7A CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410094885.6A CN104916747B (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911163403.7A Division CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104916747A true CN104916747A (en) | 2015-09-16 |
| CN104916747B CN104916747B (en) | 2019-12-20 |
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ID=54085629
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410094885.6A Active CN104916747B (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
| CN201911163403.7A Pending CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911163403.7A Pending CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN104916747B (en) |
Citations (5)
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| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| US20060215723A1 (en) * | 2005-03-24 | 2006-09-28 | Sharp Kabushiki Kaisha | Window structure semiconductor laser device and manufacturing method therefor |
| JP2009010304A (en) * | 2007-06-29 | 2009-01-15 | Dowa Electronics Materials Co Ltd | Light-emitting element with current confinement structure and method of manufacturing the same |
| US20110233590A1 (en) * | 2010-03-29 | 2011-09-29 | Hee Young Beom | Light emitting device, method for fabricating light emitting device, and light emitting device package |
| CN103500784A (en) * | 2013-09-26 | 2014-01-08 | 厦门乾照光电股份有限公司 | Epitaxial structure, growth process and chip process of near-infrared light emitting diode |
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| US5614734A (en) * | 1995-03-15 | 1997-03-25 | Yale University | High efficency LED structure |
| JP3423203B2 (en) * | 1997-03-11 | 2003-07-07 | シャープ株式会社 | Method for manufacturing semiconductor laser device |
| US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| JP4457826B2 (en) * | 2004-09-22 | 2010-04-28 | 三菱化学株式会社 | Light-emitting diode using nitride semiconductor |
| CN100466310C (en) * | 2005-02-25 | 2009-03-04 | 日立电线株式会社 | Light emitting diode and method for fabricating same |
| JP2007005591A (en) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | Semiconductor light emitting device |
| JP4835377B2 (en) * | 2006-10-20 | 2011-12-14 | 日立電線株式会社 | Semiconductor light emitting device |
| JP2012502482A (en) * | 2008-09-08 | 2012-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | Electrically pixelated light emitting device |
| JP2010245312A (en) * | 2009-04-07 | 2010-10-28 | Hitachi Cable Ltd | Light-emitting element |
-
2014
- 2014-03-14 CN CN201410094885.6A patent/CN104916747B/en active Active
- 2014-03-14 CN CN201911163403.7A patent/CN110854249A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| US20060215723A1 (en) * | 2005-03-24 | 2006-09-28 | Sharp Kabushiki Kaisha | Window structure semiconductor laser device and manufacturing method therefor |
| JP2009010304A (en) * | 2007-06-29 | 2009-01-15 | Dowa Electronics Materials Co Ltd | Light-emitting element with current confinement structure and method of manufacturing the same |
| US20110233590A1 (en) * | 2010-03-29 | 2011-09-29 | Hee Young Beom | Light emitting device, method for fabricating light emitting device, and light emitting device package |
| CN103500784A (en) * | 2013-09-26 | 2014-01-08 | 厦门乾照光电股份有限公司 | Epitaxial structure, growth process and chip process of near-infrared light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110854249A (en) | 2020-02-28 |
| CN104916747B (en) | 2019-12-20 |
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