CN104916254A - Double-face displayer - Google Patents
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- CN104916254A CN104916254A CN201510290653.2A CN201510290653A CN104916254A CN 104916254 A CN104916254 A CN 104916254A CN 201510290653 A CN201510290653 A CN 201510290653A CN 104916254 A CN104916254 A CN 104916254A
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Abstract
The invention relates to a double-face displayer, consisting of N*M light emitting pixel units which are arranged according to an array structure. The double-face displayer is characterized in that two groups of driving thin film transistors (TFT) and a layer of organic light emitting diode which are stacked on a base layer of each light emitting pixel unit, that a non-transparent reflective layer which is made of an insulation material is positioned on the organic light-emitting diode, a planarization layer is arranged on the reflective layer, the planarization layer is provided with an LCD displayer, an E-paper displayer or an E-Ink displayer, that one group of the driving thin film transistors (TFT) is connected to the anode of the organic light-emitting diode through the source or the drain electrode of the driving thin film transistors (TFT), that the other group of the driving thin film transistors (TFT) passes through the reflective layer and the planarization layer to connect to the driving electrodes of the LCD displayer, the E-paper displayer or the E-Ink displayer through the source or the drain electrode of the driving thin film transistors (TFT). The double-face displayer can combine the flat displayers with various types (LCD, E-paper,E-ink) with the OLED displayer and achieves the double-faced independent illumination display of the combined displayer.
Description
Technical field
The present invention relates to flat panel display technology, particularly relate to the flat panel display technology that can realize double-side.
Background technology
Organic light emitting display (OLED, Organic Light-Emitting Display) is a kind of luminous display unit that can be electrically excited the luminescence of fluorescence organic compound.OLED is combined according to matrix structure by N × M (N and M is natural number) individual light-emitting pixels unit, according to the type of drive for driving the luminescence of light-emitting pixels unit, OLED can be divided into passive matrix (PM, passive-matrix) type or active matrix (AM, active-matrix) type.
Fig. 1 represents the cut-open view of existing OLED light-emitting pixels unit.Manufacture method and the structure of this panel are described with reference to Fig. 1, form cushion 105 on the substrate 100.Then utilize conventional method, by succession forming active layer 110 on cushion 105, gate insulation layer 120, gate electrode 130, insulation course 140 and source or drain electrode 145, formed and drive thin film transistor (TFT) (TFT).The whole surface of substrate 100 comprising drive TFT forms planarization layer 155.Then, in planarization layer 155, form through hole 150, any one in source or drain electrode 145 is exposed to through hole 150 times.
Then in through hole 150, form pixel capacitors 170, contact with the source exposed or drain electrode 145.Owing to forming pixel capacitors 170, so it has recessed region in through hole 150 along the bottom surface of through hole 150 and sidewall.
Form pixel confining layers 175 for covering pixel capacitors 170, have opening 178 in distance through hole 150 preset distance place pixel confining layers 175, its A/F is P, to expose pixel capacitors 170.The pixel capacitors 170 that opening 178 exposes forms organic emission layer 180, and form comparative electrode 190 in organic emission layer 180, thus form organic light emitting diode.This organic light emitting diode is connected with drive TFT by through hole 150, and is subject to the driving of drive TFT.
Like this, N × M light-emitting pixels unit as described in Figure 1 or other derivative light-emitting pixels unit just defines OLED according to matrix structure by its distortion, usual comparative electrode 190 is opaque as negative electrode or anode, and such OLED is that one side is luminous.
Liquid crystal display (LCD, Liquid Crystal Display), the structure of LCD is in the middle of the glass that two panels is parallel, place liquid crystal, the two tiny electric wires having many vertical and levels in the middle of sheet glass, control shaft-like crystal molecular changes direction through whether being energized, light refraction is out produced picture.
Electronic paper (E-paper), sometimes it is a kind of portable for being called radio paper (radio paper) or electronic paper (electronic paper), reusable storage and display medium, but it looks like paper can be write (renewal) thousands of times or millions of times by what repeat.E-paper is made up of a slice transparent plastic usually, and it contains the pearl composition of millions of individual small dichromatism, and they are placed in the parcel of filling with oil.Text and image show by rotating these pearls to the response of electric pulse: one rotate completely be shown as black or white, part rotate the shade that appears dimmed.
E-Ink is generally referred to as " electronic ink technologies " (electrophoresis-type Electronic Paper), it is a kind of Screen Technology, the Electronic Paper of E-Ink is made up of electric ink and two plate bases, scribble a kind of electric ink be made up of countless small transparent grain above it, particle diameter only has the half size of the hairline of people.As long as adjust the color of intragranular dyestuff and micro particle, electric ink just can be made to represent color and pattern.When this electric ink is coated onto after on paper, cloth or other planar objects, as long as people are suitably shocked by electricity to it, just can make hundreds of millions of particle change colors, thus constantly change manifested pattern and word according to the setting of people.It has the advantages that consumption rate is low and refresh rate is fast.
In order to realize double-side, usually there is following way:
1. the comparative electrode 190 of OLED to be arranged to printing opacity, but like this, wherein the luminescence of one side and the luminescence of another side are contrary, and wherein one side accurately can not show information, also can reduce the luminous mass on two sides simultaneously.
2. adopt the mode of mechanical connection, above-mentioned two OLED are packaged together or two packaged single OLED are bonded together, can the thickness of remarkable increase display like this.
But, sometimes dissimilar display device (as LCD, E-paper, E-Ink) and AMOLED is needed to combine to realize double-sided display, if most of clamshell phone is all the different display screen of loading two, can load now a two-sided display screen, exterior display screen represents driving information or background with low electricity, LCD, E-Ink or E-paper can be adopted, this should be very useful function to mobile phone, inner display, in order to show normal operation information, can adopt OLED display screen etc.
Summary of the invention
The object of the invention is in order to the flat-panel screens of dissimilar (as LCD, E-paper, E-Ink) and OLED display are combined, realize the independently luminescence display that the display after combination is two-sided.
The technical solution adopted in the present invention is: a kind of display with double faces, combined according to matrix structure by N × M light-emitting pixels unit, it is characterized in that, be laminated with two groups on the basic unit of each light-emitting pixels unit and drive thin film transistor (TFT) (TFT) and one deck organic light emitting diode, there is on described organic light emitting diode the lighttight reflection horizon that one deck is made up of insulating material, there is on described reflection horizon a planarization layer, on described planarization layer, there is LCD, E-paper or E-Ink display, wherein one group drives thin film transistor (TFT) (TFT) to be connected with the anode of organic light emitting diode by its source or drain electrode, another group drives thin film transistor (TFT) (TFT) to run through described reflection horizon and planarization layer and LCD by its source or drain electrode, the drive electrode of E-paper or E-Ink display connects.
Further, following stepped construction is contained on the basic unit of the light-emitting pixels unit of above-mentioned display with double faces:
Cushion, is formed on substrate, and its material is monox or silicon oxynitride;
Active layer, being formed on cushion and being separated into two sections, its material is amorphous silicon or polysilicon;
Gate insulation layer, to be formed on active layer and cushion and active layer is divided into two sections, and its material is silicon dioxide or hafnium oxide or oxides of nitrogen;
Gate electrode layer, to be formed on gate insulation layer and to be separated into two sections, and its material is tungsten molybdenum or aluminium or copper;
Interlayer insulating film, is formed on gate insulation layer and gate electrode layer, and its material is silicon dioxide or fluorinated silicon oxide or polytetrafluoroethylmaterial material;
First pixel confining layers, being formed on interlayer insulating film and being separated into two sections, its material is monox or silicon oxynitride;
First anode layer, to be formed on interlayer insulating film and to be positioned at the centre of the first pixel confining layers two sections, and its material is tin indium oxide or indium zinc oxide or electroconductive polymer;
First organic luminous layer, being formed on first anode layer and being positioned at the centre of the first pixel confining layers two sections, its material is electroluminescent organic material;
First cathode layer, be formed on the first pixel confining layers and the first organic luminous layer, its material is tin indium oxide or indium zinc oxide;
Reflection horizon, is formed on the first cathode layer, and its material is insulated metal material;
Planarization layer, is formed on reflection horizon, and its material is monox or silicon oxynitride;
LCD, E-paper or E-Ink display, is layered on reflection horizon;
Also comprise two groups of sources and drain electrode, described two groups of sources are all run through interlayer insulating film with the lower end of drain electrode and are connected with the two ends of gate insulation layer and active layer, wherein the upper end of one group of source or drain electrode is run through the first pixel confining layers and is connected with first anode layer, reflection horizon is run through in the upper end of another group source or drain electrode, planarization layer is connected with the drive electrode of LCD, E-paper or E-Ink display, thus becomes two groups to drive thin film transistor (TFT) (TFT) respectively with gate electrode layer;
Described first anode layer, the first organic luminous layer and the first cathode layer form organic light emitting diode.
Further, the material in above-mentioned reflection horizon adopts lighttight alundum (Al2O3) (Al2O3).
Further, described first organic luminous layer is stepped construction, is made up of hole transmission layer, luminescent layer and electron transfer layer.
Further, the material of described source and drain electrode is tungsten molybdenum or aluminium or copper.
The invention has the beneficial effects as follows: by the organic light emitting diode in light-emitting pixels unit with arrange opaque material between LCD, E-paper or E-Ink display and separated, and drive thin film transistor (TFT) (TFT) to drive respectively by two groups, thus realize the two-sided independent luminescence display of display, be convenient to technologic continuous seepage simultaneously.
Accompanying drawing explanation
Fig. 1 is the structure principle chart of existing OLED light-emitting pixels unit.
Fig. 2 is the structure principle chart of light-emitting pixels unit of the present invention.
Description of reference numerals: basic unit 1, cushion 2, active layer 3, gate insulation layer 4, gate electrode layer 5, source and drain electrode 6, interlayer insulating film 7, first pixel confining layers 8, first cathode layer 9, reflection horizon 10, planarization layer 11, LCD, E-paper or E-Ink display 12.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the present invention is described in further detail.
As shown in Figure 2, a kind of OLED display combined according to matrix structure by N × M (N and M is natural number) light-emitting pixels unit is shown.Be laminated with two groups on the basic unit 1 of each light-emitting pixels unit and drive thin film transistor (TFT) (TFT) and one deck organic light emitting diode, there is on described organic light emitting diode the lighttight reflection horizon 10 that one deck is made up of insulating material, there is on described reflection horizon 10 planarization layer 11, on described planarization layer 11, there is LCD, E-paper or E-Ink display, wherein one group drives thin film transistor (TFT) (TFT) to be connected with the anode of organic light emitting diode by its source or drain electrode, another group drives thin film transistor (TFT) (TFT) to run through described reflection horizon 10 and planarization layer 11 and LCD by its source or drain electrode, the drive electrode (not shown) of E-paper or E-Ink display 12 connects.
Following stepped construction is contained on the basic unit 1 of the light-emitting pixels unit of above-mentioned display with double faces:
Basic unit 1, as display with double faces stepped construction the bottom and exist, its material can adopt alkali-free glass or plastics (Non-Alkali Glass or Plastic).
Cushion 2, is formed on substrate 1, and its material can adopt monox or silicon oxynitride (SiO2or SiOxNy).
Active layer 3, being formed on cushion and being separated into two sections, its material can adopt amorphous silicon or polysilicon (a-si or poly-si).
Gate insulation layer 4, being formed on active layer and cushion and active layer 3 is divided into two sections, its material can adopt silicon dioxide, hafnium oxide, oxides of nitrogen and polymkeric substance (SiO2, HfO2, Nitride-Oxide, Polymeric).
Gate electrode layer 5, being formed on gate insulation layer 4 and being separated into two sections, its material can adopt tungsten molybdenum, aluminium, copper etc. (MoW, AL, Cu, etc).
Interlayer insulating film 7, is formed on gate insulation layer 4 and gate electrode layer 5, and its material can adopt silicon dioxide, fluorinated silicon oxide and polytetrafluoroethylmaterial material (SiO2, SiOF, PTFF).
First pixel confining layers 8, being formed on interlayer insulating film 7 and being separated into two sections, its material can adopt monox or silicon oxynitride (SiO2or SiOxNy).
First anode layer 14, being formed on interlayer insulating film 7 and being positioned at the centre of the first pixel confining layers 8 two sections, its material can adopt tin indium oxide, indium zinc oxide, electroconductive polymer and polymkeric substance (ITO, IZO, PEDOT, Polymer).
First organic luminous layer 13, to be formed on first anode layer 14 and to be positioned at the centre of the first pixel confining layers 8 two sections, be made up of electroluminescent organic material, itself is also the composite bed be made up of stepped construction, generally includes hole transmission layer (HTL), luminescent layer (EL) and electron transfer layer (ETL).
First cathode layer 9, is formed on the first pixel confining layers 8 and the first organic luminous layer 13, and its material can adopt tin indium oxide, indium zinc oxide, electroconductive polymer and alloy (ITO, IZO, PEDOT, Metal (alloy)).
Reflection horizon 10, be formed on the first cathode layer 9, its material can adopt insulating material or insulated metal material, as materials such as lighttight alundum (Al2O3)s (Al2O3).
Planarization layer 11, is formed on reflection horizon 10, makes stepped construction become smooth, and its material can adopt monox or silicon oxynitride (SiO2or SiOxNy);
LCD, E-paper or E-Ink display 12, be layered on reflection horizon 10, LCD, E-paper or E-Ink display all adopts existing technology, therefore it can be used as entirety not do further decomposition in the present embodiment;
Also comprise two groups of sources and drain electrode 6, described two groups of sources and the lower end of drain electrode are all run through interlayer insulating film 7 and are connected with the two ends of gate insulation layer 4 and active layer 3, wherein the upper end of one group of (on the right side of Fig. 2) source or drain electrode is run through the first pixel confining layers 8 and is connected with first anode layer 14, reflection horizon 10 is run through in the upper end of another group (on the right side of Fig. 2) source or drain electrode, planarization layer 11 is connected with the drive electrode of LCD, E-paper or E-Ink display, thus becomes two groups to drive thin film transistor (TFT) (TFT) respectively with gate electrode layer 5; The material of source and drain electrode 6 can adopt tungsten molybdenum, aluminium, copper etc. (MoW, AL, Cu, etc).
Described first anode layer 14, first organic luminous layer 13 and the first cathode layer 9 form organic light emitting diode.Above-mentioned two groups drive the position of thin film transistor (TFT) (TFT) to exchange left and right.
The material in above-mentioned reflection horizon 10 adopts lighttight alundum (Al2O3) (Al2O3).
The formation of above-mentioned stepped construction can adopt in current OLED display device production run existed technique already, as the various production technologies such as photoetching process, chemical etching method and Small molecular sedimentation complete.
Those of ordinary skill in the art will appreciate that, embodiment described here is to help reader understanding's principle of the present invention, should be understood to that the protection domain invented is not limited to so special statement and embodiment.Everyly make various possible equivalent replacement or change according to foregoing description, be all considered to belong to the protection domain of claim of the present invention.
Claims (6)
1. a display with double faces, combined according to matrix structure by N × M light-emitting pixels unit, it is characterized in that, be laminated with two groups on the basic unit of each light-emitting pixels unit and drive thin film transistor (TFT) (TFT) and one deck organic light emitting diode, there is on described organic light emitting diode the lighttight reflection horizon that one deck is made up of insulating material, there is on described reflection horizon a planarization layer, on described planarization layer, there is LCD, E-paper or E-Ink display, wherein one group drives thin film transistor (TFT) (TFT) to be connected with the anode of organic light emitting diode by its source or drain electrode, another group drives thin film transistor (TFT) (TFT) to run through described reflection horizon and planarization layer and LCD by its source or drain electrode, the drive electrode of E-paper or E-Ink display connects.
2. a kind of display with double faces according to claim 1, is characterized in that, contains following stepped construction on the basic unit of the light-emitting pixels unit of above-mentioned display with double faces:
Cushion, is formed on substrate;
Active layer, to be formed on cushion and to be separated into two sections;
Gate insulation layer, to be formed on active layer and cushion and active layer is divided into two sections;
Gate electrode layer, to be formed on gate insulation layer and to be separated into two sections;
Interlayer insulating film, is formed on gate insulation layer and gate electrode layer;
First pixel confining layers, to be formed on interlayer insulating film and to be separated into two sections;
First anode layer, to be formed on interlayer insulating film and to be positioned at the centre of the first pixel confining layers two sections;
First organic luminous layer, to be formed on first anode layer and to be positioned at the centre of the first pixel confining layers two sections;
First cathode layer, is formed on the first pixel confining layers and the first organic luminous layer;
Reflection horizon, is formed on the first cathode layer;
Planarization layer, is formed on reflection horizon;
LCD, E-paper or E-Ink display, is layered on reflection horizon;
Also comprise two groups of sources and drain electrode, described two groups of sources are all run through interlayer insulating film with the lower end of drain electrode and are connected with the two ends of gate insulation layer and active layer, wherein the upper end of one group of source or drain electrode is run through the first pixel confining layers and is connected with first anode layer, reflection horizon is run through in the upper end of another group source or drain electrode, planarization layer is connected with the drive electrode of LCD, E-paper or E-Ink display, thus becomes two groups to drive thin film transistor (TFT) (TFT) respectively with gate electrode layer;
Described first anode layer, the first organic luminous layer and the first cathode layer form organic light emitting diode.
3. a kind of display with double faces according to claim 1 and 2, is characterized in that, the material in described reflection horizon adopts lighttight alundum (Al2O3) (Al2O3).
4. a kind of display with double faces according to claim 2, is characterized in that, the material of described basic unit for its material be alkali-free glass or plastics; The material of described cushion is monox or silicon oxynitride; The material of described active layer is amorphous silicon or polysilicon; The material of described gate insulation layer is silicon dioxide or hafnium oxide or oxides of nitrogen; The material of described gate electrode layer is tungsten molybdenum or aluminium or copper; The material of described interlayer insulating film is silicon dioxide or fluorinated silicon oxide or polytetrafluoroethylmaterial material; The material of described first pixel confining layers is monox or silicon oxynitride; The material of described first anode layer is tin indium oxide or indium zinc oxide or electroconductive polymer; The material of described first organic luminous layer is electroluminescent organic material; The material of described first cathode layer is tin indium oxide or indium zinc oxide; The material in described reflection horizon is insulated metal material; The material of described planarization layer is monox or silicon oxynitride.
5. a kind of display with double faces according to claim 2, is characterized in that, described first organic luminous layer is stepped construction, is made up of hole transmission layer, luminescent layer and electron transfer layer.
6. a kind of display with double faces according to claim 2, is characterized in that, the material of described source and drain electrode is tungsten molybdenum or aluminium or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510290653.2A CN104916254A (en) | 2014-12-03 | 2015-06-01 | Double-face displayer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410727553 | 2014-12-03 | ||
| CN2014107275537 | 2014-12-03 | ||
| CN201510290653.2A CN104916254A (en) | 2014-12-03 | 2015-06-01 | Double-face displayer |
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| CN104916254A true CN104916254A (en) | 2015-09-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160224302A1 (en) * | 2015-02-03 | 2016-08-04 | Kobo Incorporated | Method and system for device display screen transition related to device power monitoring |
| CN109659371A (en) * | 2018-12-21 | 2019-04-19 | 武汉华星光电技术有限公司 | Thin film transistor (TFT), the production method of thin film transistor (TFT) and liquid crystal display |
-
2015
- 2015-06-01 CN CN201510290653.2A patent/CN104916254A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160224302A1 (en) * | 2015-02-03 | 2016-08-04 | Kobo Incorporated | Method and system for device display screen transition related to device power monitoring |
| CN109659371A (en) * | 2018-12-21 | 2019-04-19 | 武汉华星光电技术有限公司 | Thin film transistor (TFT), the production method of thin film transistor (TFT) and liquid crystal display |
| US11955563B2 (en) | 2018-12-21 | 2024-04-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Thin film transistor, manufacturing method of thin film transistor, and liquid crystal display |
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