CN104914893B - A kind of temperature-controlled process of semiconductor device and system - Google Patents
A kind of temperature-controlled process of semiconductor device and system Download PDFInfo
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Abstract
The present invention provides a kind of temperature-controlled process of semiconductor device and system, and methods described includes：Step 1, the load of the functional module of detection semiconductor device；Step 2, the result according to the load of the functional module of detection, the maximum running frequency of the functional module of dynamic adjustment semiconductor device limits.The present invention also provides a kind of methods described corresponding system.The present invention can efficiently control the temperature of the functional module of semiconductor device, prevents semiconductor device temperature too high, and then affects the experience of user, can also reduce power consumption simultaneously, so that the performance of semiconductor device is tried one's best and maximize.
Description
Technical field
The present invention relates to a kind of device temperature control field, particularly to a kind of temperature-controlled process of semiconductor device.
Background technology
The operation power consumption of semiconductor device is mainly subject to operating frequency, voltage, load effect.Generally operating frequency is higher, property
Can be higher, but the running voltage needing will be higher, run power consumption also bigger.Under identical operating frequency, running voltage, bear
Carry bigger, run power consumption also bigger.With the increase running power consumption, and the temperature leading to semiconductor device is risen, temperature
Rise and again the characteristic of semiconductor device can be made to change, may make its cannot normal work, and bring bad Consumer's Experience.
In many semiconductor device, may not there is temperature detecting module it is impossible to operationally detection temperature, and according to
The temperature of detection carries out associative operation and realizes the control to temperature.A kind of existing solution is to maintain the work(of semiconductor device
Module can operate in relatively low frequency.But so the performance making semiconductor device is greatly reduced.
From the foregoing, there is conflicting relation between the performance of semiconductor device and temperature, therefore, find one
Kind can rationally, effective control semiconductor device temperature, simultaneously and the method that can as far as possible reduce the impact to performance, particularly right
In the semiconductor device that there is not temperature detecting module, it appears of crucial importance.
Content of the invention
One of the technical problem to be solved in the present invention, is to provide a kind of temperature-controlled process of semiconductor device, described
Method is rationally and effectively controlled by the temperature of the functional module to semiconductor device, to prevent semiconductor device temperature mistake
Height, and affect Consumer's Experience, power consumption can also be reduced simultaneously, so that the performance of semiconductor device is tried one's best and maximize.
The present invention is realized in：A kind of temperature-controlled process of semiconductor device, methods described comprises the steps：
Step 1, the load of the functional module of detection semiconductor device；
Step 2, the result according to the load of the functional module of detection, the functional module of dynamic adjustment semiconductor device is
High running frequency limits.
Further, also include step 3, limited according to the maximum running frequency of the functional module of semiconductor device and detect
The load of functional module result, the drive clock frequency to the functional module being supplied to semiconductor device and driving voltage
At least one is adjusted.
Further, before execution step 2, need first to test out load and the highest of the functional module of semiconductor device
The relation that running frequency limits, concrete test is as follows：First obtain the maximum temperature Tmax that semiconductor device allows, and arrange and partly lead
The load of the functional module of body device is L1, and the running frequency of default One function module；Then run semiconductor device
Functional module, measure the maximum temperature T of now semiconductor device, and judge whether the maximum temperature T of semiconductor device is equal to
The maximum temperature Tmax that semiconductor device allows, if so, then this default running frequency is this functional module in load is L1
When corresponding maximum running frequency limit；If it is not, then repeating to adjust the running frequency of functional module, until the semiconductor device measured
When the maximum temperature T of part is equal to the maximum temperature Tmax that semiconductor device allows, write down running frequency now, this running frequency
It is this functional module corresponding maximum running frequency when load is for L1 to limit.
Further, described step 2 is specially：The load of the functional module according to the semiconductor device testing out and highest
Running frequency limit between relation, obtain the corresponding maximum running frequency of the load of functional module that detects and limit, then will
The running frequency of the functional module of this semiconductor device limits to adjust and limits to corresponding maximum running frequency.
Further, when there is multiple functional module in semiconductor device, performance requirement according to semiconductor device and
The loading condition of each functional module, the maximum running frequency restriction to functional module carries out selectivity adjustment.
The two of the technical problem to be solved in the present invention, are to provide a kind of temperature control system of semiconductor device, described
System is rationally and effectively controlled by the temperature of the functional module to semiconductor device, to prevent semiconductor device temperature mistake
Height, and affect Consumer's Experience, power consumption can also be reduced simultaneously, so that the performance of semiconductor device is tried one's best and maximize.
The present invention is realized in：A kind of temperature control system of semiconductor device, including load detecting module and
Control module；
Described load detecting module, for detecting the load of the functional module of semiconductor device；
Described control module, for the result of the load of the functional module according to detection, dynamic adjustment semiconductor device
The maximum running frequency of functional module limits.
Further, also include frequency/voltage adjustment module, for the highest fortune of the functional module according to semiconductor device
The result of the load of functional module of line frequency restriction and detection, the drive clock to the functional module being supplied to semiconductor device
At least one of frequency and driving voltage is adjusted.
Further, before execution control module, need first to test out the load of the functional module of semiconductor device with
The relation that maximum running frequency limits, concrete test is as follows：First obtain the maximum temperature Tmax that semiconductor device allows, and arrange
The load of the functional module of semiconductor device is L1, and the running frequency of default One function module；Then run quasiconductor
The functional module of device, measures the maximum temperature T of now semiconductor device, and whether judges the maximum temperature T of semiconductor device
The maximum temperature Tmax allowing equal to semiconductor device, if so, then this default running frequency is this functional module in load
Limit for maximum running frequency corresponding during L1；If it is not, then repeating to adjust the running frequency of functional module, until that measures partly leads
When the maximum temperature T of body device is equal to the maximum temperature Tmax that semiconductor device allows, write down running frequency now, this operation
Frequency is this functional module corresponding maximum running frequency when load is for L1 and limits.
Further, described control module is specially：The load of the functional module according to the semiconductor device testing out with
Relation between maximum running frequency restriction, obtains the corresponding maximum running frequency restriction of the load of the functional module of detection, so
Afterwards the running frequency of the functional module of this semiconductor device is limited to adjust and limit to corresponding maximum running frequency.
Further, when there is multiple functional module in semiconductor device, performance requirement according to semiconductor device and
The loading condition of each functional module, the maximum running frequency restriction to functional module carries out selectivity adjustment.
The invention has the advantages that：1st, the present invention can apply in the semiconductor device not comprising temperature detecting module
On, the temperature of semiconductor device can be efficiently controlled, prevent semiconductor device temperature too high, and then affect the experience of user；2、
Can be limited according to the maximum running frequency of the functional module of load dynamic regulation semiconductor device, with respect to by functional module one
Directly operate in relatively low frequency, reduce the impact to performance of semiconductor device；3rd, the model that can limit in maximum running frequency
Carry out dynamic frequency, pressure regulation operation, this can reduce power consumption on the premise of reaching control temperature further in enclosing.
Brief description
The present invention is further illustrated in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the inventive method execution flow chart.
Fig. 2 is present system structured flowchart.
Fig. 3 is the flow chart of the relation of test load and maximum running frequency in the present invention.
Specific embodiment
Refer to shown in Fig. 1, a kind of temperature-controlled process of semiconductor device, including：
Step 1, the load of the functional module of detection semiconductor device；
Step 2, the result according to the load of the functional module of detection, the functional module of dynamic adjustment semiconductor device is
High running frequency limits, too high with the temperature that prevents semiconductor device, and then affects the experience of user.
Refer to shown in Fig. 3, before executing this step 2, need first to test out the negative of the functional module of semiconductor device
Carry the relation limiting with maximum running frequency, concrete test is as follows：The maximum temperature Tmax first obtaining semiconductor device permission (should
The maximum temperature Tmax allowing is typically the highest work temperature that this device set in designing semiconductor device can bear
Degree), and to arrange the load of the functional module of semiconductor device be L1, and the running frequency of default One function module, wherein
The load L1 of functional module of setting and the running frequency of default functional module be essentially can any value, but specifically
It will usually select some to be easier to calculate and representative value during enforcement；Then run the function mould of semiconductor device
Block, in the specific implementation, when the functional module of semiconductor device generally to be waited until is run for a period of time and temperature relatively stablizes, then surveys
Go out the maximum temperature T of now semiconductor device, and judge whether the maximum temperature T of semiconductor device is equal to semiconductor device permission
Maximum temperature Tmax, if so, then this default running frequency is this functional module corresponding highest fortune when load is for L1
Line frequency limits；If it is not, then repeating to adjust the running frequency of functional module, the maximum temperature T of the semiconductor device until measuring
Equal to semiconductor device allow maximum temperature Tmax when, write down running frequency now, this running frequency is this function mould
Block corresponding maximum running frequency when load is for L1 limits.
This step 2 is specially：The load of the functional module according to the semiconductor device testing out is limited with maximum running frequency
Relation between system, obtains the corresponding maximum running frequency restriction of the load of the functional module of detection, then by this semiconductor device
The running frequency of the functional module of part limits to adjust and limits to corresponding maximum running frequency.
In actual enforcement, first frequency can be run with highest according to the load of the functional module of semiconductor device testing out
Rate limit between relation, by the load partition of functional module be N number of region Dn, and each region Dn be respectively provided with one corresponding
High running frequency limits Fn；Then the load of the functional module according to detection, the functional module of dynamic adjustment semiconductor device
Maximum running frequency limits, and that is, when the load of the functional module of detection falls in m-th region Dm, just adjusts this functional module
Maximum running frequency is limited to Fm；
Wherein, N, M are natural number, and N >=2, M≤N.
Methods described also includes step 3, is limited according to the maximum running frequency of the functional module of semiconductor device and detect
The load of functional module result, the drive clock frequency to the functional module being supplied to semiconductor device and driving voltage
At least one is adjusted, and to reduce the power consumption of semiconductor device, so that the performance of semiconductor device is tried one's best and maximizes；This step 3
For optional step.
When there is multiple functional module in semiconductor device, the performance requirement according to semiconductor device and each functional module
Loading condition, the maximum running frequency of functional module is limited and carries out selectivity adjustment.For example, in SOC, system is (below
Abbreviation SOC) in comprise central processing unit (hereinafter referred to as CPU) functional module and image processor (hereinafter referred to as GPU) function mould
Block, the running frequency due to adjusting GPU functional module may affect dynamically to show, thus appreciable impact Consumer's Experience, institute
Limit to control the temperature of SOC with the maximum running frequency generally by adjustment cpu function module.When cpu function mould
When the load of the load of block and GPU functional module is all high, in order to control temperature, keep preferably showing fluency simultaneously, can
Limited with the maximum running frequency not reducing GPU functional module, but more reduce the maximum running frequency of cpu function module
Limit.
Specific embodiment one：
Refer to shown in Fig. 1 and Fig. 3, taking SOC as a example, this SOC comprises cpu function module, first test should
The relation that the load of cpu function module of SOC is limited with maximum running frequency, and the CPU according to the SOC testing out
The relation that the load of functional module and maximum running frequency limit, the load partition of cpu function module is N (N in the present embodiment
Value 4) individual region Dn (D1～D4), and each region Dn be respectively provided with a corresponding maximum running frequency limit Fn (F1～
F4), concrete such as table 1.
Relation table between the load of table 1 cpu function module and maximum running frequency restriction
With reference to shown in table 1, methods described includes：
Step 1, the load L of detection cpu function module；For example, the load L of the cpu function module of detection falls in the 2nd area
Domain 25%≤L ＜ 50%；
Step 2, the load L lookup corresponding maximum running frequency restriction Fn according to the cpu function module detecting, then will
The running frequency of cpu function module limits to adjust and limits Fn, for example, above-mentioned 2nd region to corresponding maximum running frequency
Maximum running frequency corresponding to 25%≤L ＜ 50% is limited to 1400MHz, now just adjusts the highest of this cpu function module
Running frequency is limited to 1400MHz.
Wherein, the load L of detection cpu function module can pass through to detect the utilization rate of cpu function module, typically by
The statistics cpu function module working time accounts for the ratio of total time to obtain.
In the present embodiment, the pass that the described load of cpu function module testing this SOC is limited with maximum running frequency
It is specific as follows：
The maximum temperature Tmax obtaining the permission of this SOC is 80 degrees Celsius, in order to control ambient temperature, can be by this SOC
Chip is placed in calorstat it is considered to worst temperature environment during practical application, calorstat can be set to 50 degrees Celsius.Control
The utilization rate of cpu function module is 25%, for example, when cpu function module is SMP (symmetric multi-processors) structure, and comprises 4
During core cpu, only can be run on 1 core cpu by restriction task, and make this core cpu oepration at full load, thus
The utilization rate that this cpu function module can be controlled is 25%.
Then the running frequency presetting this cpu function module is 800MHz, runs a period of time, in SOC
When temperature is more stable, just measure the maximum temperature T1 of now SOC, for example now maximum temperature T1 is 50 degrees Celsius.By
It is less than the maximum temperature Tmax of SOC permission in 50 degrees Celsius it is possible to the running frequency improving cpu function module is
1600MHz, runs a period of time, when the temperature in SOC is more stable, then measures the maximum temperature T2 of SOC,
For example now maximum temperature T2 is 80 degrees Celsius (i.e. T2 is equal to the maximum temperature Tmax that SOC allows), then this cpu function mould
The block maximum running frequency corresponding when load is for 25% limits and is 1600MHz.
Refer to shown in Fig. 2, a kind of temperature control system of semiconductor device, including load detecting module and control mould
Block；
Described load detecting module, for detecting the load of the functional module of semiconductor device；
Described control module, for the result of the load of the functional module according to detection, dynamic adjustment semiconductor device
The maximum running frequency of functional module limits, too high with the temperature that prevents semiconductor device, and then affects the experience of user.
Refer to shown in Fig. 3, before executing this control module, need first to test out the functional module of semiconductor device
The relation that load is limited with maximum running frequency, concrete test is as follows：First obtain the maximum temperature Tmax that semiconductor device allows
(the maximum temperature Tmax of this permission is typically the highest work that this device set in designing semiconductor device can bear
Temperature), and to arrange the load of the functional module of semiconductor device be L1, and the running frequency of default One function module, its
The running frequency of the load L1 of the functional module of middle setting and default functional module be essentially can any value, but tool
It will usually select some to be easier to calculate and representative value when body is implemented；Then run the function of semiconductor device
Module, in the specific implementation, when the functional module of semiconductor device generally to be waited until is run for a period of time and temperature relatively stablizes, then
Measure the maximum temperature T of now semiconductor device, and judge whether the maximum temperature T of semiconductor device permits equal to semiconductor device
The maximum temperature Tmax being permitted, if so, then this default running frequency is this functional module corresponding highest when load is for L1
Running frequency limits；If it is not, then repeating to adjust the running frequency of functional module, the maximum temperature of the semiconductor device until measuring
When T is equal to the maximum temperature Tmax that semiconductor device allows, write down running frequency now, this running frequency is this function mould
Block corresponding maximum running frequency when load is for L1 limits.
This control module is specially：The load of the functional module according to the semiconductor device testing out and maximum running frequency
Relation between restriction, obtains the corresponding maximum running frequency restriction of the load of the functional module of detection, then by this quasiconductor
The running frequency of the functional module of device limits to adjust and limits to corresponding maximum running frequency.
In actual enforcement, first frequency can be run with highest according to the load of the functional module of semiconductor device testing out
Rate limit between relation, by the load partition of functional module be N number of region Dn, and each region Dn be respectively provided with one corresponding
High running frequency limits Fn；Then the load of the functional module according to detection, the functional module of dynamic adjustment semiconductor device
Maximum running frequency limits, and that is, when the load of the functional module of detection falls in m-th region Dm, just adjusts this functional module
Maximum running frequency is limited to Fm；
Wherein, N, M are natural number, and N >=2, M≤N.
Described system also includes frequency/voltage adjustment module, for the highest fortune of the functional module according to semiconductor device
The result of the load of functional module of line frequency restriction and detection, the drive clock to the functional module being supplied to semiconductor device
At least one of frequency and driving voltage is adjusted, and to reduce the power consumption of semiconductor device, makes the performance of semiconductor device to the greatest extent
Amount maximizes；This frequency/voltage adjustment module is that module may be selected.
When there is multiple functional module in semiconductor device, the performance requirement according to semiconductor device and each functional module
Loading condition, the maximum running frequency of functional module is limited and carries out selectivity adjustment.For example, in SOC, system is (below
Abbreviation SOC) in comprise central processing unit (hereinafter referred to as CPU) functional module and image processor (hereinafter referred to as GPU) function mould
Block, the running frequency due to adjusting GPU functional module may affect dynamically to show, thus appreciable impact Consumer's Experience, institute
Limit to control the temperature of SOC with the maximum running frequency generally by adjustment cpu function module.When cpu function mould
When the load of the load of block and GPU functional module is all high, in order to control temperature, keep preferably showing fluency simultaneously, can
Limited with the maximum running frequency not reducing GPU functional module, but more reduce the maximum running frequency of cpu function module
Limit.
Specific embodiment two：
Refer to shown in Fig. 2 and Fig. 3, taking SOC as a example, this SOC comprises cpu function module, first test should
The relation that the load of cpu function module of SOC is limited with maximum running frequency, and the CPU according to the SOC testing out
The relation that the load of functional module and maximum running frequency limit, the load partition of cpu function module is N (N in the present embodiment
Value 4) individual region Dn (D1～D4), and each region Dn be respectively provided with a corresponding maximum running frequency limit Fn (F1～
F4), concrete such as table 2.
Relation table between the load of table 2 cpu function module and maximum running frequency restriction
With reference to shown in table 2, described system includes：
Load detecting module, for detecting the load L of cpu function module；For example, the load L of the cpu function module of detection
Fall in the 2nd region 25%≤L ＜ 50%；
Control module, the load L for the cpu function module according to detection searches corresponding maximum running frequency restriction
Then the running frequency of cpu function module is limited and adjusts to corresponding maximum running frequency restriction Fn, for example, the above-mentioned 2nd by Fn
Maximum running frequency corresponding to individual region 25%≤L ＜ 50% is limited to 1400MHz, now just adjusts this cpu function module
Maximum running frequency be limited to 1400MHz.
Wherein, the load L of detection cpu function module can pass through to detect the utilization rate of cpu function module, typically by
The statistics cpu function module working time accounts for the ratio of total time to obtain.
In the present embodiment, the pass that the described load of cpu function module testing this SOC is limited with maximum running frequency
It is specific as follows：
The maximum temperature Tmax obtaining the permission of this SOC is 80 degrees Celsius, in order to control ambient temperature, can be by this SOC
Chip is placed in calorstat it is considered to worst temperature environment during practical application, calorstat can be set to 50 degrees Celsius.Control
The utilization rate of cpu function module is 25%, for example, when cpu function module is SMP (symmetric multi-processors) structure, and comprises 4
During core cpu, only can be run on 1 core cpu by restriction task, and make this core cpu oepration at full load, thus
The utilization rate that this cpu function module can be controlled is 25%.
Then the running frequency presetting this cpu function module is 800MHz, runs a period of time, in SOC
When temperature is more stable, just measure the maximum temperature T1 of now SOC, for example now maximum temperature T1 is 50 degrees Celsius.By
It is less than the maximum temperature Tmax of SOC permission in 50 degrees Celsius it is possible to the running frequency improving cpu function module is
1600MHz, runs a period of time, when the temperature in SOC is more stable, then measures the maximum temperature T2 of SOC,
For example now maximum temperature T2 is 80 degrees Celsius (i.e. T2 is equal to the maximum temperature Tmax that SOC allows), then this cpu function mould
The block maximum running frequency corresponding when load is for 25% limits and is 1600MHz.
Present invention can apply in the terminal (such as handheld terminal) of all kinds of inclusion semiconductor device, and pass through the present invention
Described method and system the chip temperature of the terminal of all kinds of inclusion semiconductor device is control effectively, and prevent chip temperature
Spend height, affect Consumer's Experience.The end of classes of semiconductors device can also be reduced by method and system of the present invention
The chip power-consumption at end, makes the terminal capabilities of classes of semiconductors device try one's best and maximizes.
In sum, advantage of the present invention is as follows：1st, the present invention can apply in the quasiconductor not comprising temperature detecting module
The temperature of semiconductor device on device, can be efficiently controlled, prevent semiconductor device temperature too high, and then affect the body of user
Test；2nd, can be limited according to the maximum running frequency of the functional module of load dynamic regulation semiconductor device, with respect to by function
Module operates in relatively low frequency always, reduces the impact to performance of semiconductor device；3rd, can limit in maximum running frequency
Carry out dynamic frequency, pressure regulation operation, this can reduce power consumption on the premise of reaching control temperature further in the range of system.
Although the foregoing describing the specific embodiment of the present invention, those familiar with the art should manage
Solution, we are merely exemplary described specific embodiment, rather than for the restriction to the scope of the present invention, are familiar with this
Equivalent modification and change that the technical staff in field is made in the spirit according to the present invention, all should cover the present invention's
In scope of the claimed protection.
Claims (8)
1. a kind of temperature-controlled process of semiconductor device it is characterised in that：Comprise the steps：
Step 1, the load of the functional module of detection semiconductor device；
Step 2, the result according to the load of the functional module of detection, the highest fortune of the functional module of dynamic adjustment semiconductor device
Line frequency limits；
Before execution step 2, the load first testing out the functional module of semiconductor device is needed to limit with maximum running frequency
Relation, concrete test is as follows：First obtain the maximum temperature Tmax that semiconductor device allows, and the function of semiconductor device is set
The load of module is L1, and the running frequency of default One function module；Then run the functional module of semiconductor device, survey
Go out the maximum temperature T of now semiconductor device, and judge whether the maximum temperature T of semiconductor device is equal to semiconductor device permission
Maximum temperature Tmax, if so, then this default running frequency is this functional module corresponding highest fortune when load is for L1
Line frequency limits；If it is not, then repeating to adjust the running frequency of functional module, the maximum temperature T of the semiconductor device until measuring
Equal to semiconductor device allow maximum temperature Tmax when, write down running frequency now, this running frequency is this function mould
Block corresponding maximum running frequency when load is for L1 limits.
2. a kind of semiconductor device according to claim 1 temperature-controlled process it is characterised in that：Also include step 3,
The result of the load of functional module of the maximum running frequency restriction of the functional module according to semiconductor device and detection, to offer
At least one of drive clock frequency to the functional module of semiconductor device and driving voltage is adjusted.
3. a kind of semiconductor device according to claim 1 temperature-controlled process it is characterised in that：Described step 2 has
Body is：Relation between the load of the functional module according to the semiconductor device testing out and maximum running frequency restriction, is examined
The maximum running frequency that the load of the functional module surveyed is corresponding limits, then by the operation of the functional module of this semiconductor device
Frequency limitation adjusts and limits to corresponding maximum running frequency.
4. a kind of semiconductor device according to claim 1 temperature-controlled process it is characterised in that：Work as semiconductor device
When inside there is multiple functional module, the performance requirement according to semiconductor device and the loading condition of each functional module, to function mould
The maximum running frequency of block limits and carries out selectivity adjustment.
5. a kind of temperature control system of semiconductor device it is characterised in that：Described system includes load detecting module and control
Molding block；
Described load detecting module, for detecting the load of the functional module of semiconductor device；
Described control module, for the result of the load of the functional module according to detection, the dynamic function of adjusting semiconductor device
The maximum running frequency of module limits；
Before execution control module, the load first testing out the functional module of semiconductor device is needed to limit with maximum running frequency
The relation of system, concrete test is as follows：First obtain the maximum temperature Tmax that semiconductor device allows, and the work(of semiconductor device is set
The load of energy module is L1, and the running frequency of default One function module；Then run the functional module of semiconductor device,
Measure the maximum temperature T of now semiconductor device, and judge whether the maximum temperature T of semiconductor device permits equal to semiconductor device
The maximum temperature Tmax being permitted, if so, then this default running frequency is this functional module corresponding highest when load is for L1
Running frequency limits；If it is not, then repeating to adjust the running frequency of functional module, the maximum temperature of the semiconductor device until measuring
When T is equal to the maximum temperature Tmax that semiconductor device allows, write down running frequency now, this running frequency is this function mould
Block corresponding maximum running frequency when load is for L1 limits.
6. a kind of semiconductor device according to claim 5 temperature control system it is characterised in that：Also include frequency/
VRM Voltage Regulator Module, the maximum running frequency restriction for the functional module according to semiconductor device and the functional module of detection
The result of load, at least one of the drive clock frequency to the functional module being supplied to semiconductor device and driving voltage is carried out
Adjust.
7. a kind of semiconductor device according to claim 5 temperature control system it is characterised in that：Described control module
It is specially：Relation between the load of the functional module according to the semiconductor device testing out and maximum running frequency restriction, obtains
The maximum running frequency that the load of the functional module of detection is corresponding limits, then by the fortune of the functional module of this semiconductor device
Line frequency limits to adjust and limits to corresponding maximum running frequency.
8. a kind of semiconductor device according to claim 5 temperature control system it is characterised in that：Work as semiconductor device
When inside there is multiple functional module, the performance requirement according to semiconductor device and the loading condition of each functional module, to function mould
The maximum running frequency of block limits and carries out selectivity adjustment.
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| CN106292773B (en) * | 2016-08-19 | 2018-09-14 | 青岛海信移动通信技术股份有限公司 | Temperature adjustment device and method for regulating temperature |
| JP2019114009A (en) * | 2017-12-22 | 2019-07-11 | ルネサスエレクトロニクス株式会社 | Semiconductor device, semiconductor system, and method thereof |
| CN110824337A (en) * | 2019-10-17 | 2020-02-21 | 福州瑞芯微电子股份有限公司 | Method and device for high-temperature test of SOC chip |
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| CN103575401A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | System for testing temperature distribution characteristics of power semiconductor module |
| KR101975409B1 (en) * | 2012-07-26 | 2019-05-08 | 삼성전자주식회사 | System on chip and temperature control method thereof |
| CN102946049B (en) * | 2012-11-15 | 2014-06-04 | 电子科技大学 | Drive and temperature control circuit of quantum cascade laser |
| CN104020838A (en) * | 2014-06-20 | 2014-09-03 | 中科创达软件股份有限公司 | Method and device for controlling working frequency of central processing unit (CPU) |
| CN104298277A (en) * | 2014-09-19 | 2015-01-21 | 江苏骏龙电力科技股份有限公司 | Automatic temperature control system of semiconductor laser |
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