CN104914487A - Method of manufacturing flexible thin film capable of enhancing light reflection - Google Patents

Method of manufacturing flexible thin film capable of enhancing light reflection Download PDF

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Publication number
CN104914487A
CN104914487A CN201510344747.3A CN201510344747A CN104914487A CN 104914487 A CN104914487 A CN 104914487A CN 201510344747 A CN201510344747 A CN 201510344747A CN 104914487 A CN104914487 A CN 104914487A
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film
polymer
polymkeric substance
reverse taper
monocrystalline silicon
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CN104914487B (en
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刘红忠
雷彪
蒋维涛
尹磊
史永胜
陈邦道
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Xian Jiaotong University
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Xian Jiaotong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/12—Reflex reflectors
    • G02B5/122—Reflex reflectors cube corner, trihedral or triple reflector type
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Abstract

The invention discloses a method of manufacturing a flexible thin film capable of enhancing light reflection. A metal masking layer required by dry etching is firstly manufactured, etching parameters are then regulated to manufacture a reverse tapered column array silicon die, the die is turned to manufacture a reverse tapered hole array flexible thin film, the reverse tapered column array silicon die after hydrophobic treatment is fixed on a substrate, a cushion is fixed at two sides of the reverse tapered column array silicon die, a polymer is used for being fully applied to the surface of the reverse tapered column array silicon die, bubbles in the polymer are removed through vacuum treatment, a pressing plate is then used for squeezing the polymer, the pressing plate, the polymer, the cushion, the reverse tapered column array silicon die and the substrate are heated on the whole, the polymer is cured, the polymer and the reverse tapered column array silicon die are separated, and a polymer reverse tapered hole array flexible thin film is acquired. The polymer reverse tapered hole array flexible thin film has good elastic performance and is driven to be deformed through applying an external force to realize regulation on reflectivity, and regulation on reflectivity of the thin film is realized through overlapping of multiple layers or combinations of different orders.

Description

A kind of manufacture method strengthening light reflected compliance film
Technical field
The invention belongs to minute manufacturing and optoelectronic device manufacture field, particularly a kind of manufacture method strengthening light reflected compliance film.
Background technology
The rudiment the earliest of optical thin film concept is in the discovery of the 17th century " Newton ring ", and optical thin film has now been widely used in optics, photoelectron technical field and various optical instrument.
Traditional optical thin film is with the interference of light for theoretical foundation, and optical thin film utilizes different materials to have different reflections, absorption, transmission performance to light, and in conjunction with a kind of film that actual needs manufactures.Along with the development of nanometer technique, novel optical thin film---nanocomposite optical film is developed rapidly.Mainly through applying one deck micro-nano granules at material surface or the thickness of film being accomplished a kind of optical thin film that nanoscale obtains, this film has the unexistent optical characteristics of ordinary optical film.
At present, optical thin film is once prepare, and its reflecting properties is also just decided.Meanwhile, the general light transmission of optical thin film is all very poor, and namely at present optical thin film exists reflectivity and can not regulate and control the problem with light transmission difference, and for reflectivity should be asked to require again, radioparent optical application occasion limits to some extent for this.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of manufacture method strengthening light reflected compliance film, this fexible film effectively can improve the reflectivity of 300 ~ 1400nm light wave, simultaneously reflectivity controllable, has that cost is low, steady performance.
To achieve these goals, the technical scheme taked of the present invention is as follows:
Strengthen a manufacture method for light reflected compliance film, comprise the following steps:
1) prepare the masking layer required for dry etching, realize the graphical of photoresist by photoetching process at the clean monocrystalline silicon sheet surface of preparation; Again by sputtering or evaporation process at have the monocrystalline silicon sheet surface of photoetching offset plate figure to prepare film that a layer thickness is 200 ~ 1000 nanometers; Then the graphical of film is obtained, to form the masking layer required for dry etching by stripping technology;
2) back taper post array silicon mould is prepared, the monocrystalline silicon piece with masking layer is put into dry etching machine, monocrystalline silicon piece back taper post array silicon mould is prepared by regulation and control etching parameters in etching process, etching parameters is: power 105 ~ 150W, reflective power 1 ~ 4W, bias voltage 300 ~ 320V, etching process SF 6flow 90 ~ 99.8sccm, C 4f 8flow 2.4 ~ 5.5sccm; Limit wall passivating process SF 6flow 2.3 ~ 6.2sccm, C 4f 8flow 85 ~ 96.9sccm; Etching and passivation change-over period are 15 ~ 30 seconds; Then remove masking layer, obtain back taper post array silicon mould;
3) turn over molded standby reverse taper holes array flexible film, first, monocrystalline silicon piece back taper post array silicon mould hydrophobic treatments crossed is fixed on smooth substrate, then, bed course is fixed on the both sides of monocrystalline silicon piece back taper post array silicon mould; Be coated in monocrystalline silicon piece back taper post array silicon mould surface completely with polymkeric substance again, and polymer thickness is higher than bed course 2 ~ 5 millimeters, then the bubble be mingled with in polymkeric substance is removed in application of vacuum; Re-use pressing plate squeeze polymer, the load be applied on pressing plate is 50 ~ 120Kg, keeps 15 ~ 30 seconds; Then by pressing plate, polymkeric substance, bed course, back taper post array silicon mould, the whole heating of substrate, heating-up temperature is 50 ~ 90 DEG C, keeps making polymer cure in 30 ~ 60 minutes; Isolating polymer and back taper post array silicon mould again, obtains polymkeric substance reverse taper holes array flexible film.
Described film is aluminium film, aluminum oxide film or silicon nitride film.
Described polymkeric substance is PDMS (dimethyl silicone polymer) or PUA (polyurethane-polyacrylate) or POE (polyolefin elastomer).
The reverse taper holes outside diameter D of described polymkeric substance reverse taper holes array flexible film and end diameter d, the spacing L size relationship of the depth H of the reverse taper holes of described polymkeric substance reverse taper holes array flexible film and the reverse taper holes of described polymkeric substance reverse taper holes array flexible film is 0.01 >=D/H > 0,20 >=D/d > 0,0.05 >=D/L > 0.
Advantage of the present invention: the polymkeric substance reverse taper holes array flexible film that the present invention obtains has excellent elastic performance, orders about by applying external force the regulation and control that polymkeric substance reverse taper holes array flexible deformation of thin membrane realizes its reflectivity; Can be realized the superposition of multiple layer polymer reverse taper holes array flexible film by overlay alignment technology, and the combination of multiple layer polymer reverse taper holes array flexible film different order realizes the regulation and control of reflectivity of optical thin film.
Accompanying drawing explanation
Fig. 1 is the masking layer process flow diagram prepared required for dry etching, and Fig. 1 (a) is photoetching offset plate figure schematic diagram; Fig. 1 (b) is the deposition schematic diagram of film; Fig. 1 (c) is the graphical schematic diagram peeling off rear film.
Fig. 2 is the manufacturing process flow diagram of back taper post array silicon mould, back taper post array silicon mould schematic diagram after Fig. 2 (a) dry etching; Fig. 2 (b) is back taper post array silicon mould schematic diagram after removal film.
Fig. 3 is preparation technology's process flow diagram of alignment marker, and Fig. 3 (a) is photoresist alignment marker schematic diagram; Fig. 3 (b) is film alignment marker schematic diagram; Fig. 3 (c) is the alignment marker schematic diagram of monocrystalline silicon piece back taper post array silicon mould.
Fig. 4 turns over molded standby reverse taper holes array flexible film schematic diagram, and Fig. 4 (a) is the structural representation turning over mould; Fig. 4 (b) is the schematic diagram of the polymkeric substance reverse taper holes array flexible film that the demoulding obtains.
Fig. 5 is the single polymer layer reverse taper holes array flexible reflectivity of optical thin film instrumentation plan of embodiment 1, and Fig. 5 (a) is projection light from the schematic diagram of single polymer layer reverse taper holes array flexible film front and back surface incident; Fig. 5 (b) is single polymer layer reverse taper holes array flexible reflectivity of optical thin film measurement result figure.
Fig. 6 is the ELECTRODE WITH BILAYER POLYMERIC thing reverse taper holes array flexible reflectivity of optical thin film instrumentation plan of embodiment 1, and Fig. 6 (a) is the incident schematic diagram of projection light from the ELECTRODE WITH BILAYER POLYMERIC thing reverse taper holes array flexible film of four kinds of various combinations; Fig. 6 (b) is ELECTRODE WITH BILAYER POLYMERIC thing reverse taper holes array flexible reflectivity of optical thin film measurement result figure.
Fig. 7 is that 1 ~ 6 one polymer reverse taper holes array flexible film of embodiment 1 is according to the albedo measurement result figure combining in Fig. 6.
When Fig. 8 is projection light wavelength 700 nanometer, 1 ~ 6 one polymer reverse taper holes array flexible film of embodiment 1 is according to the albedo measurement result figure combining in Fig. 6.
Fig. 9 is the regulation and control schematic diagram that the polymkeric substance reverse taper holes array flexible deformation of thin membrane ordering about embodiment 1 by applying external force realizes reflectivity.
Figure 10 is the regulation and control schematic diagram being realized reflectivity by the combination of the multiple layer polymer reverse taper holes array flexible film different order of embodiment 1.
Embodiment
Describe the present invention below in conjunction with drawings and Examples.
Embodiment 1
Strengthen a manufacture method for light reflected compliance film, comprise the following steps:
1) masking layer required for dry etching is prepared:
1.1) with reference to Fig. 1 (a) and Fig. 3 (a), the graphical of photoresist 2 is realized by photoetching process on clean monocrystalline silicon piece 1 surface of preparation; Patterned photoresist 2 comprises photoresist alignment marker 10;
1.2) with reference to Fig. 1 (b), then by sputtering at the film 3 that photoresist 2 patterned monocrystalline silicon piece 1 surface preparation a layer thickness is 500 nanometers, film 3 is aluminium film;
1.3) with reference to Fig. 1 (c) and Fig. 3 (b), then the graphical of film 3 is obtained, to form the masking layer required for dry etching by stripping technology; Film 3 comprises film alignment marker 11;
2) back taper post array silicon mould is prepared:
2.1) with reference to Fig. 2 (a), the monocrystalline silicon piece 1 with film 3 is put into dry etching machine, in etching process, prepare monocrystalline silicon piece 1 back taper post array silicon mould by regulation and control etching parameters, etching parameters is: power 125W, reflective power 2.5W, bias voltage 310V, etching process SF 6flow 95.4sccm, C 4f 8flow 3.5sccm; Limit wall passivating process SF 6flow 3.4sccm, C 4f 8flow 91.4sccm; Etching and passivation change-over period are 22 seconds;
2.2) with reference to Fig. 2 (b) and Fig. 3 (c), then remove masking layer, obtain monocrystalline silicon piece 1 back taper post array silicon mould; Wherein, film alignment marker 11 transfers to the mould aligning mark 4 of monocrystalline silicon piece 1 back taper post array silicon mould;
3) with reference to Fig. 4, molded standby reverse taper holes array flexible film is turned over:
3.1) monocrystalline silicon piece 1 back taper post array silicon mould hydrophobic treatments crossed is fixed on smooth substrate 5;
3.2) the first bed course 6 and the second bed course 7 are fixed on the both sides of monocrystalline silicon piece 1 back taper post array silicon mould;
3.3) be coated in monocrystalline silicon piece 1 back taper post array silicon mould surface completely with polymkeric substance 8 again, and polymkeric substance 8 thickness is higher than the first bed course 6 and the second bed course 7 thickness 3 millimeters, described polymkeric substance 8 is PDMS;
3.4) then the bubble be mingled with in polymkeric substance 8 is removed in application of vacuum;
3.5) use pressing plate 9 squeeze polymer 8, the load be applied on pressing plate 9 is 85Kg, keeps 22 seconds;
3.6) then by pressing plate 9, polymkeric substance 8, first bed course 6, second bed course 7, monocrystalline silicon piece 1 back taper post array silicon mould, the whole heating of substrate 5, heating-up temperature is 70 DEG C, keeps within 45 minutes, making polymkeric substance 8 solidify;
3.7) isolating polymer 8 and monocrystalline silicon piece 1 back taper post array silicon mould again, obtains polymkeric substance reverse taper holes array flexible film; Wherein, the reverse taper holes outside diameter D of described polymkeric substance reverse taper holes array flexible film and end diameter d, the spacing L size relationship of the depth H of the reverse taper holes of described polymkeric substance reverse taper holes array flexible film and the reverse taper holes of described polymkeric substance reverse taper holes array flexible film is 0.01>=D/H > 0,20>=D/d > 0, the height of 0.05>=D/L > 0, first bed course 6 and the second bed course 7 is T 1, monocrystalline silicon piece 1 back taper post array silicon mould height is T 2, need relational expression T be met 1-T 2=t, t are the thickness at the polymer flexibility film back side, and the gross thickness of polymer flexibility film is t+H.
The effect of the present embodiment:
With reference to Fig. 5, Fig. 5 is the measurement result figure of the enhancing reflectivity of single polymer layer reverse taper holes array flexible film front and back prepared by embodiment 1, test result shows that this reflectivity being embedded with the polymer flexibility film front and back of reverse taper holes array is apparently higher than straight polymer fexible film, wherein incident light 12 is from rear projection, and reflectivity is greater than from front projection.
Be the measurement result figure of the enhancing reflectivity of the polymkeric substance reverse taper holes array flexible film of double-deck various combination embodiment 1 preparation with reference to Fig. 6, Fig. 6, it is maximum that test result shows that combination one reflectivity strengthens, and combines four reflectivity and strengthen minimum; Combination two and combination three reflectivity, between combination one and combination four, wherein combine two and are greater than combination three.
That the polymkeric substance reverse taper holes array flexible film of 1 ~ 6 layer of embodiment 1 preparation is according to the albedo measurement result figure combining in Fig. 6 with reference to Fig. 7, Fig. 7; Test result shows the increase along with the polymkeric substance reverse taper holes array flexible film number of plies, and its reflectivity is also in enhancing.
When being projection light wavelength 700 nanometer with reference to Fig. 8, Fig. 8,1 ~ 6 one polymer reverse taper holes array flexible film prepared by embodiment 1 is according to the albedo measurement result figure combining in Fig. 6.
With reference to Fig. 9, Fig. 9 orders about polymkeric substance reverse taper holes array flexible deformation of thin membrane prepared by embodiment 1 realize the regulation and control schematic diagram of reflectivity by applying external force, by ordering about polymkeric substance reverse taper holes array flexible deformation of thin membrane to the stretching/fashion of extrusion of polymkeric substance reverse taper holes array flexible film, obtain the regulation and control of polymkeric substance reverse taper holes array flexible film different reflectivity with this.
With reference to Figure 10, Figure 10 is the regulation and control schematic diagram that the combination of the polymkeric substance reverse taper holes array flexible film different order prepared by multiple layer embodiment 1 realizes reflectivity, the reflectivity of polymkeric substance reverse taper holes array flexible film front and back is different, by the different order stack combinations between multiple layer polymer reverse taper holes array flexible film, the regulation and control of polymkeric substance reverse taper holes array flexible reflectivity of optical thin film can be realized.
Embodiment 2
Strengthen a manufacture method for light reflected compliance film, comprise the following steps:
1) masking layer required for dry etching is prepared:
1.1) with reference to Fig. 1 (a) and Fig. 3 (a), the graphical of photoresist 2 is realized by photoetching process on clean monocrystalline silicon piece 1 surface of preparation; Patterned photoresist 2 comprises photoresist alignment marker 10;
1.2) with reference to Fig. 1 (b), be then the film 3 of 200 nanometers by evaporation process there being photoresist 2 patterned monocrystalline silicon piece 1 surface preparation a layer thickness, film 3 is aluminum oxide film;
1.3) with reference to Fig. 1 (c) and Fig. 3 (b), then the graphical of film 3 is obtained, to form the masking layer required for dry etching by stripping technology; Film 3 comprises film alignment marker 11;
2) back taper post array silicon mould is prepared:
2.1) with reference to Fig. 2 (a), the monocrystalline silicon piece 1 with film 3 is put into dry etching machine, in etching process, prepare monocrystalline silicon piece 1 back taper post array silicon mould by regulation and control etching parameters, etching parameters is: power 105W, reflective power 1W, bias voltage 300V, etching process SF 6flow 90sccm, C 4f 8flow 2.4sccm; Limit wall passivating process SF 6flow 2.3sccm, C 4f 8flow 85sccm; Etching and passivation change-over period are 15 seconds;
2.2) with reference to Fig. 2 (b) and Fig. 3 (c), then remove masking layer, obtain monocrystalline silicon piece 1 back taper post array silicon mould; Wherein, film alignment marker 11 transfers to the mould aligning mark 4 of monocrystalline silicon piece 1 back taper post array silicon mould;
3) with reference to Fig. 4, molded standby reverse taper holes array flexible film is turned over:
3.1) monocrystalline silicon piece 1 back taper post array silicon mould hydrophobic treatments crossed is fixed on smooth substrate 5;
3.2) the first bed course 6 and the second bed course 7 are fixed on the both sides of monocrystalline silicon piece 1 back taper post array silicon mould;
3.3) be coated in monocrystalline silicon piece 1 back taper post array silicon mould surface completely with polymkeric substance 8 again, and polymkeric substance 8 thickness is higher than the first bed course 6 and the second bed course 7 thickness 2 millimeters, described polymkeric substance 8 is PUA;
3.4) then the bubble be mingled with in polymkeric substance 8 is removed in application of vacuum;
3.5) use pressing plate 9 squeeze polymer 8, the load be applied on pressing plate 9 is 50Kg, keeps 30 seconds;
3.6) by pressing plate 9, polymkeric substance 8, first bed course 6, second bed course 7, monocrystalline silicon piece 1 back taper post array silicon mould, the whole heating of substrate 5, heating-up temperature is 50 DEG C, keeps within 60 minutes, making polymkeric substance 8 solidify;
3.7) isolating polymer 8 and monocrystalline silicon piece 1 back taper post array silicon mould, obtains polymkeric substance reverse taper holes array flexible film.
The effect of the present embodiment: the test result of single polymer layer reverse taper holes array flexible film, ELECTRODE WITH BILAYER POLYMERIC thing reverse taper holes array flexible film and 1 ~ 6 one polymer reverse taper holes array flexible reflectivity of optical thin film prepared by embodiment 2 is all in increase trend.
Embodiment 3
Strengthen a manufacture method for light reflected compliance film, comprise the following steps:
1) masking layer required for dry etching is prepared;
1.1) with reference to Fig. 1 (a) and Fig. 3 (a), the graphical of photoresist 2 is realized by photoetching process on clean monocrystalline silicon piece 1 surface of preparation; Patterned photoresist 2 comprises photoresist alignment marker 10;
1.2) with reference to Fig. 1 (b), then by sputtering at the film 3 that photoresist 2 patterned monocrystalline silicon piece 1 surface preparation a layer thickness is 1000 nanometers, film 3 is silicon nitride film;
1.3) with reference to Fig. 1 (c) and Fig. 3 (b), then the graphical of film 3 is obtained, to form the masking layer required for dry etching by stripping technology; Film 3 comprises film alignment marker 11;
2) back taper post array silicon mould is prepared:
2.1) with reference to Fig. 2 (a), the monocrystalline silicon piece 1 with film 3 is put into dry etching machine, in etching process, prepare monocrystalline silicon piece 1 back taper post array silicon mould by regulation and control etching parameters, etching parameters is: power 150W, reflective power 4W, bias voltage 320V, etching process SF 6flow 99.8sccm, C 4f 8flow 5.5sccm; Limit wall passivating process SF 6flow 6.2sccm, C 4f 8flow 96.9sccm; Etching and passivation change-over period are 30 seconds;
2.2) with reference to Fig. 2 (b) and Fig. 3 (c), then remove masking layer, obtain monocrystalline silicon piece 1 back taper post array silicon mould; Wherein, film alignment marker 11 transfers to the mould aligning mark 4 of monocrystalline silicon piece 1 back taper post array silicon mould;
3) with reference to Fig. 4, molded standby reverse taper holes array flexible film is turned over:
3.1) monocrystalline silicon piece 1 back taper post array silicon mould hydrophobic treatments crossed is fixed on smooth substrate 5;
3.2) the first bed course 6 and the second bed course 7 are fixed on the both sides of monocrystalline silicon piece 1 back taper post array silicon mould;
3.3) be then coated in monocrystalline silicon piece 1 back taper post array silicon mould surface completely with polymkeric substance 8, and polymkeric substance 8 thickness is higher than the first bed course 6, second bed course 7 thickness 5 millimeters, described polymkeric substance 8 is POE;
3.4) bubble be mingled with in polymkeric substance 8 is removed in application of vacuum;
3.5) use pressing plate 9 squeeze polymer 8, the load be applied on pressing plate 9 is 120Kg, keeps 15 seconds;
3.6) by pressing plate 9, polymkeric substance 8, first bed course 6, second bed course 7, monocrystalline silicon piece 1 back taper post array silicon mould, the whole heating of substrate 5, heating-up temperature is 90 DEG C, keeps within 30 minutes, making polymkeric substance 8 solidify;
3.7) isolating polymer 8 and monocrystalline silicon piece 1 back taper post array silicon mould, obtains polymkeric substance reverse taper holes array flexible film.
The effect of the present embodiment: the test result of single polymer layer reverse taper holes array flexible film, ELECTRODE WITH BILAYER POLYMERIC thing reverse taper holes array flexible film and 1 ~ 6 one polymer reverse taper holes array flexible reflectivity of optical thin film prepared by embodiment 3 is all in increase trend.

Claims (4)

1. can strengthen a manufacture method for light reflected compliance film, it is characterized in that, comprise the following steps:
1) prepare the masking layer required for dry etching, realize the graphical of photoresist by photoetching process at the clean monocrystalline silicon sheet surface of preparation; Again by sputtering or evaporation process at have the monocrystalline silicon sheet surface of photoetching offset plate figure to prepare film that a layer thickness is 200 ~ 1000 nanometers; Then the graphical of film is obtained, to form the masking layer required for dry etching by stripping technology;
2) back taper post array silicon mould is prepared, the monocrystalline silicon piece with masking layer is put into dry etching machine, monocrystalline silicon piece back taper post array silicon mould is prepared by regulation and control etching parameters in etching process, etching parameters is: power 105 ~ 150W, reflective power 1 ~ 4W, bias voltage 300 ~ 320V, etching process SF 6flow 90 ~ 99.8sccm, C 4f 8flow 2.4 ~ 5.5sccm; Limit wall passivating process SF 6flow 2.3 ~ 6.2sccm, C 4f 8flow 85 ~ 96.9sccm; Etching and passivation change-over period are 15 ~ 30 seconds; Then remove masking layer, obtain back taper post array silicon mould;
3) turn over molded standby reverse taper holes array flexible film, first, monocrystalline silicon piece back taper post array silicon mould hydrophobic treatments crossed is fixed on smooth substrate, then, bed course is fixed on the both sides of monocrystalline silicon piece back taper post array silicon mould; Be coated in monocrystalline silicon piece back taper post array silicon mould surface completely with polymkeric substance again, and polymer thickness is higher than bed course 2 ~ 5 millimeters, then the bubble be mingled with in polymkeric substance is removed in application of vacuum; Re-use pressing plate squeeze polymer, the load be applied on pressing plate is 50 ~ 120Kg, keeps 15 ~ 30 seconds; Then by pressing plate, polymkeric substance, bed course, back taper post array silicon mould, the whole heating of substrate, heating-up temperature is 50 ~ 90 DEG C, keeps making polymer cure in 30 ~ 60 minutes; Isolating polymer and back taper post array silicon mould again, obtains polymkeric substance reverse taper holes array flexible film.
2. a kind of manufacture method strengthening light reflected compliance film according to claim 1, is characterized in that: described film is aluminium film, aluminum oxide film or silicon nitride film.
3. a kind of manufacture method strengthening light reflected compliance film according to claim 1, is characterized in that: described polymkeric substance is PDMS (dimethyl silicone polymer) or PUA (polyurethane-polyacrylate) or POE (polyolefin elastomer).
4. a kind of manufacture method strengthening light reflected compliance film according to claim 1, it is characterized in that: the reverse taper holes outside diameter D of described polymkeric substance reverse taper holes array flexible film and end diameter d, the spacing L size relationship of the depth H of the reverse taper holes of described polymkeric substance reverse taper holes array flexible film and the reverse taper holes of described polymkeric substance reverse taper holes array flexible film is 0.01 >=D/H > 0,20 >=D/d > 0,0.05 >=D/L > 0.
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