CN104908378A - AZO electrically conductive glass and production method thereof - Google Patents
AZO electrically conductive glass and production method thereof Download PDFInfo
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- CN104908378A CN104908378A CN201410088074.5A CN201410088074A CN104908378A CN 104908378 A CN104908378 A CN 104908378A CN 201410088074 A CN201410088074 A CN 201410088074A CN 104908378 A CN104908378 A CN 104908378A
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Abstract
The invention is suitable for technical field of electrically conductive glasses, and discloses an AZO electrically conductive glass and a production method thereof. The AZO electrically conductive glass comprises a substrate layer, and also comprises a refractive index matching layer and an AZO film mutually matching with the refractive index matching layer in refractive index and capable of realizing destructive interference of visible light, the substrate layer, the refractive index matching layer and the AZO film are sequentially arranged in a laminated manner, and the AZO film is coated on the refractive index matching layer in a direct current magnetron sputtering mode through adopting aluminum doped zinc oxide. The production method comprises the following steps: producing the substrate layer, coating the substrate layer with the refractive index matching layer, and coating the refractive index matching layer with the AZO film matching with the refractive index matching layer in refractive index and capable of realizing destructive interference of visible light in a direct current magnetron sputtering mode through adopting aluminum doped zinc oxide. The AZO electrically conductive glass produced through the production method has the advantages of good display effect, good touch control performance and low production cost, and can be well applied in the field of touch control display.
Description
Technical field
The invention belongs to electro-conductive glass technical field, particularly relate to a kind of AZO electro-conductive glass and preparation method thereof.
Background technology
AZO glass, namely zinc oxide (ZnO) transparent conducting glass of adulterated al, is the one of TCO glass, and the same with the TCO glass such as ITO also have feature that is transparent and conduction.Due to abundant raw materials, before AZO glass, be widely used in hull cell field.
Along with the development of touch-control display glass art, the demand of conventional I TO glass constantly rises, and itself belongs to rare metal due to ITO material, and reserves are limited, and expensive.In prior art, the display effect of AZO glass and touch-control poor-performing and production cost is high, be difficult to be applied to touch-control display field.
Summary of the invention
The object of the invention is to overcome above-mentioned the deficiencies in the prior art, provide a kind of AZO electro-conductive glass and preparation method thereof, its display effect and touch-control excellent performance and production cost is low, touch-control display field can be advantageously applied to.
Technical scheme of the present invention is: a kind of AZO electro-conductive glass, comprise basalis, also comprise refractive index mutually to mate and the refractive index matching layers and the AZO rete that make visible ray generation destructive interference, described basalis, refractive index matching layers and AZO rete are cascading, and described AZO rete adopts Al-Doped ZnO to be sputtered at described refractive index matching layers by the mode of magnetically controlled DC sputtering.
Alternatively, described refractive index matching layers comprises niobium pentaoxide rete and the silicon dioxide layer of stacked setting, and described niobium pentaoxide rete connects with described basalis, and described AZO rete connects with described silicon dioxide layer.
Alternatively, the thickness of described niobium pentaoxide rete is 5nm to 20nm; The refractive index of described niobium pentaoxide rete is 2.20 to 2.40.
Alternatively, the thickness of described silicon dioxide layer is 20nm to 60nm; The refractive index of described silicon dioxide layer is 1.40 to 1.50.
Alternatively, the thickness of described AZO rete is 50nm to 300nm; The refractive index of described AZO rete is 1.85 to 1.95.
Present invention also offers a kind of preparation method for above-mentioned AZO electro-conductive glass, comprise the following steps: prepare basalis, refractive index matching layers is coated with on described basalis, on described refractive index matching layers, be coated with refractive index mutually mate with described refractive index matching layers and make visible ray generation destructive interference AZO rete, and described AZO rete adopts Al-Doped ZnO to be sputtered at described refractive index matching layers by the mode of magnetically controlled DC sputtering.
Alternatively, the doping content of described Al-Doped ZnO is more than 2%.
Alternatively, in the step being coated with refractive index matching layers, comprise the following steps: be coated with niobium pentaoxide rete and silicon dioxide layer successively; Wherein, be coated with niobium pentaoxide rete and comprise the steps: that basalis is heated to about 50 to 150 DEG C and enters niobium pentaoxide target position, Ar tolerance is in 150 to 200sccm, O2 tolerance at 50 to 100sccm, and sputtering pressure is at 1.5*10
-3mba to 4*10
-3mba, in niobium pentaoxide target position, target used is twin target; Wherein, be coated with after silicon dioxide layer comprises the steps: to be coated with niobium pentaoxide rete and enter silicon target target position, Ar tolerance controls to adopt PID to control in 150 to 200sccm, O2 tolerance, and control voltage is at 350V to 500V, and sputtering pressure is at 1.5*10
-3mba to 4*10
-3mba, in silicon target target position, target used is twin target, and adopts Mid frequency alternative magnetron sputtering to be coated with silica coating on niobium pentaoxide rete.
Alternatively, be coated with AZO rete and comprise the following steps, be coated with the workpiece after refractive index matching layers and enter bringing-up section and heat, enter AZO target position at heating temperatures to 300 to 400 DEG C, Ar tolerance is at 150 to 300sccm, and sputtering pressure is at 4*10
-3mba to 7*10
-3mba, adopts magnetically controlled DC sputtering on refractive index matching layers, be coated with AZO rete.
Alternatively, the thickness of described niobium pentaoxide rete is 9.5nm, and the thickness of described silica coating is 41nm, and the thickness of described AZO rete is 120nm.
AZO electro-conductive glass provided by the invention and preparation method thereof, it makes refractive index and the thickness one_to_one corresponding of refractive index matching layers and AZO rete two kinds of retes, cooperatively interact, reach and mutually destructive interference occurs, visible ray is made on both surfaces destructive interference to occur, thus improve the display effect of follow-up display product, described AZO rete adopts Al-Doped ZnO to be sputtered at described refractive index matching layers by the mode of magnetically controlled DC sputtering, effectively can reduce the resistivity of AZO rete, to improve display effect and the touch-control effect of downstream display product, and production cost is low, touch-control display field can be applied to easily, the expensive ito glass of the limited rare metal of reserves is belonged to replace material.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the generalized section of the AZO electro-conductive glass that the embodiment of the present invention provides;
Fig. 2 is the AZO electro-conductive glass that the embodiment of the present invention provides and the reflectivity curve of glass at visible ray (380nm to 780nm) containing refractive index matching layers (IM layer) removing AZO rete.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
It should be noted that, when element is called as " being fixed on " or " being arranged at " another element, it can directly on another element or may there is centering elements simultaneously.When an element is known as " being connected to " another element, it can be directly connected to another element or may there is centering elements simultaneously.
Also it should be noted that, the orientation term such as left and right, upper and lower in the present embodiment, is only relative concept or be reference with the normal operating condition of product each other, and should not be regarded as have restrictive.
As depicted in figs. 1 and 2, a kind of AZO electro-conductive glass (also claiming to disappear shadow AZO glass) that the embodiment of the present invention provides, comprise basalis 11 successively, basalis 11 can adopt transparent material to make, such as transparent glass, as traditional conventional float glass, Pyrex or aluminosilicate glass, its thickness can be 0.4mm to 2.0mm, such as 0.4mm, 0.7mm, 1.1mm etc.Above-mentioned AZO electro-conductive glass also comprises refractive index and mutually mates and the refractive index matching layers 12 making visible ray generation destructive interference, above-mentioned AZO electro-conductive glass also comprises and AZO rete 13, described basalis 11, refractive index matching layers 12 and AZO rete 13 are cascading, refractive index matching layers 12 and AZO rete 13 refractive index are mated mutually, the i.e. refractive index of refractive index matching layers 12 and AZO rete 13 two kinds of retes and thickness one_to_one corresponding, cooperatively interact, reach and mutually destructive interference occurs, visible ray is made on both surfaces destructive interference to occur, thus improve the display effect of follow-up display product.Described AZO rete 13 adopts Al-Doped ZnO to be sputtered at described refractive index matching layers 12 by the mode of magnetically controlled DC sputtering, by the technique of above-mentioned optimization, crystal structure densification can be obtained, and the film layer structure that crystal defect is less, film material electron mobility rises, and the change of these filmogen microstructures can make the electrical conductivity of AZO rete 13 improve, and resistivity reduces, effectively can reduce the resistivity of AZO rete 13, its resistivity can be made to control at 5*10
-4about Ω/cm, such as 2*10
-4Ω/cm to 8*10
-4Ω/cm, to improve display effect and the touch-control effect of downstream display product, and production cost is low, can be applied to touch-control display field easily, such as, on capacitive touch screen device, belong to the expensive ito glass of the limited rare metal of reserves to replace material.
Particularly, described refractive index matching layers 12 comprises the niobium pentaoxide rete 121 of stacked setting and silicon dioxide layer 122 or comprises titanium dioxide layer and the silicon dioxide layer 122 of stacked setting.In the present embodiment, for niobium pentaoxide rete 121 and silicon dioxide layer 122, described niobium pentaoxide rete 121 connects with described basalis 11, and described AZO rete 13 connects with described silicon dioxide layer 122.In embody rule, described in refractive index matching layers 12 (IM layer), the thickness of niobium pentaoxide rete 121 can be 5 to 20nm, such as 7nm, 9nm, 10nm, 12nm, 15nm, 18nm etc., refractive index n (550nm) is 2.20 to 2.40, the thickness of described silicon dioxide layer 122 is 20 to 60nm, such as 22nm, 24nm, 28nm, 30nm, 34nm, 38nm, 42nm, 46nm, 50nm, 54nm, 58nm etc., refractive index n (550nm) is 1.40 to 1.50, the matching effect of this scope theca interna is excellent, can realize the shadow effect that disappears of this rete well.This niobium pentaoxide rete 121 and silicon dioxide layer 122 all can be deposited successively by Mid frequency alternative magnetron sputtering method and obtain on this basalis 11.Fig. 2 is the AZO electro-conductive glass that the embodiment of the present invention provides and the reflectivity curve of glass at visible ray (380nm to 780nm) containing refractive index matching layers (IM layer) removing AZO rete.Wherein the curve of top is the reflectivity curve of AZO electro-conductive glass (IM+AZO) at visible ray (380nm to 780nm).The curve of below is the reflectivity curve of glass at visible ray (380nm to 780nm) containing refractive index matching layers (IM layer) removing AZO rete (IM).
Particularly, the material of AZO rete 13 is Al-Doped ZnO film, and this AZO rete 13 can select Al-Doped ZnO film, and doping content (doping content refers to the ratio of adding alumina material in zinc oxide material) more than 2%.The thickness of this AZO rete 13 can be 50nm to 300nm, such as 80nm, 100nm, 120nm, 150nm, 180nm, 200nm, 240nm, 260nm etc., and refractive index n (550nm) can be 1.80 to 1.95, and resistivity controls at 5*10
-4about Ω/cm.This AZO rete 13 can be obtained in the upper deposition of refractive index matching layers 12 (IM layer) by DC magnetron sputtering method.
AZO electro-conductive glass provided by the present invention adapts in visible ray (380nm to 780nm) field with the glass-reflected curve containing refractive index matching layers 12 removing AZO rete 13, and difference is no more than 2%.Particularly, what ensure this AZO rete 1313 also claims sodium ion barrier layer, IM layer with refractive index matching layers 12() refractive index mutually mates and (so-called to mate, refer to two kinds of thin-film refractive indexs and thickness one_to_one corresponding, cooperatively interact, reach the effect that destructive interference occurs mutually), make visible ray on both surfaces destructive interference occur, thus improve the display effect of follow-up display product.
The embodiment of the present invention additionally provides a kind of preparation method for the manufacture of above-mentioned AZO electro-conductive glass, comprise the following steps: prepare basalis 11, basalis 11 can adopt transparent material to make, such as transparent glass, as traditional conventional float glass, Pyrex or aluminosilicate glass, its thickness can be 0.4mm to 2.0mm, such as 0.4mm, 0.7mm, 1.1mm etc.Refractive index matching layers 12 is coated with on described basalis 11, on described refractive index matching layers 12, be coated with refractive index mutually mate with described refractive index matching layers 12 and make visible ray generation destructive interference AZO rete 13, and described AZO rete 13 adopts Al-Doped ZnO to be sputtered at described refractive index matching layers 12 by the mode of magnetically controlled DC sputtering.Described basalis 11, refractive index matching layers 12 and AZO rete 13 are cascading, refractive index matching layers 12 and AZO rete 13 refractive index are mated mutually, the i.e. refractive index of refractive index matching layers 12 and AZO rete 13 two kinds of retes and thickness one_to_one corresponding, cooperatively interact, reach and mutually destructive interference occurs, make visible ray on both surfaces destructive interference occur, thus improve the display effect of follow-up display product.Described AZO rete 13 adopts Al-Doped ZnO to be sputtered at described refractive index matching layers 12 by the mode of magnetically controlled DC sputtering, like this, effectively can reduce the resistivity of AZO rete 13, its resistivity can be made to control at 5*10
-4about Ω/cm, such as 2*10
-4Ω/cm to 8*10
-4Ω/cm, to improve display effect and the touch-control effect of downstream display product, and simple to operate, with low cost, be very suitable for suitability for industrialized production, touch-control display field can be applied to easily, the expensive ito glass of the limited rare metal of reserves is belonged to replace material.
Preferably, the doping content of described Al-Doped ZnO is more than 2%, and doping content refers to the ratio of adding alumina material in zinc oxide material, is namely greater than 2% between the weight of alumina material and zinc oxide material.
Particularly, in the step being coated with refractive index matching layers 12, comprise the following steps: be coated with niobium pentaoxide rete 121 and silicon dioxide layer 122 successively; Wherein, be coated with niobium pentaoxide rete 121 and comprise the steps: that basalis 11 is heated to about 50 to 150 DEG C and enters niobium pentaoxide target position, Ar tolerance is in 150 to 200sccm, O2 tolerance at 50 to 100sccm, and sputtering pressure is at 1.5*10
-3to 4*10
-3, in niobium pentaoxide target position, target used is twin target (one group of twin target is made up of 2 targets, each other each other anode and cathode); Wherein, be coated with after silicon dioxide layer 122 comprises the steps: to be coated with niobium pentaoxide rete 121 and enter silicon target target position, Ar tolerance is at 150 to 200sccm, O
2tolerance controls to adopt PID to control (in engineering reality, adjuster control law is ratio, integration, differential control, and is called for short PID and controls), and control voltage is at 350V to 500V, and sputtering pressure is at 1.5*10
-3mba to 4*10
-3mba, in silicon target target position, target used is twin target, and adopts Mid frequency alternative magnetron sputtering to be coated with silica coating on niobium pentaoxide rete 121.
Particularly, be coated with AZO rete 13 and comprise the following steps, the workpiece be coated with after refractive index matching layers 12 enters bringing-up section and heats, and enters AZO target position at heating temperatures to 300 to 400 DEG C, and Ar tolerance is at 150 to 300sccm, and sputtering pressure is at 4*10
-3mba to 7*10
-3mba, adopts magnetically controlled DC sputtering to be coated with AZO rete 13 on refractive index matching layers 12.
Preferably, the thickness of described niobium pentaoxide rete 121 is 9.5nm, and the thickness of described silica coating is 41nm, and the thickness of described AZO rete 13 is 120nm.Understandably, the thickness of niobium pentaoxide rete 121, silica coating and AZO rete 13 also can be selected as other suitable thickness, also belongs to protection scope of the present invention.
Wherein, prepare in the step of basalis 11, it is basalis 11 that thickness can be adopted to be 1.0mm ultra-white float glass, in embody rule, can by the touch-control original sheet glass of desired thickness through cutting into required size, then obtain the glass substrate layers 11 needed for plated film through edging, grinding, cleaning.Be placed on transmission dolly by ready glass substrate layers 11, setting transmission dolly walking speed, enters vacuum coating equipment, is heated to about 50 ~ 150 DEG C steps into niobium pentaoxide target position through the bringing-up section of cavity, preferred Ar tolerance at 150 ~ 200sccm, preferred O
2tolerance is at 50 ~ 100sccm, and preferred sputtering pressure is at 1.5*10
-3mba ~ 4*10
-3mba, magnetron sputtering coater can be adopted to be coated with refractive index matching layers 12 (IM layer) by Mid frequency alternative magnetron sputtering, and Ar tolerance is at 180sccm, O
2tolerance, at 60sccm, ensures that sputtering pressure is at 2.5*10
-3mba, niobium target used is twin target, and adopt Mid frequency alternative magnetron sputtering to be coated with niobium pentaoxide rete 121 on glass substrate layers 11, the thickness that this technique plates out is probably at 9.5nm.On niobium pentaoxide rete 121, be coated with the thick silica coating of 41.0nm subsequently, preferred Ar tolerance is at 150 ~ 200sccm, O
2tolerance controls to adopt PID to control, and control voltage is at 420V, and preferred sputtering pressure is at 2.5*10
-3mba, target used is twin target, adopts Mid frequency alternative magnetron sputtering method.The refractive index matching layers 12(IM layer plated) glass substrate layers 1111 continue through bringing-up section, reach about 350 DEG C in temperature and enter AZO target position, AZO target be more than 2% or 2% doping, preferred Ar tolerance is at 250sccm, and preferred sputtering pressure is at 6.5*10
-3mba, adopts magnetically controlled DC sputtering on silica coating, be coated with the thick AZO rete 13 of 120nm.
The present embodiment AZO electro-conductive glass, the thicknesses of layers of niobium pentaoxide rete 121 is 9.5nm, the thicknesses of layers of silica coating be 41nm, AZO thickness is 120nm.This thickness proportioning can well be disappeared shadow effect, this shadow AZO glass that disappears adapts in visible ray (380nm ~ 780nm) field with the glass-reflected curve containing refractive index matching layers 12 (IM layer) 12 removing AZO rete 1313, and difference is no more than 2%, as shown in Figure 2, the requirement in touch-control display field application is reached.And the present embodiment disappears the square resistance of shadow AZO glass in about 50 Ω/, AZO rete 13131 resistivity at 5*10
-4about Ω/cm, can meet the requirement of downstream touch-control touch-control display product touch-control effect.The shadow AZO glass that disappears provided by the present invention, AZO rete 13 adopts high temperature to be coated with, and resistivity controls at 5*10-4 about Ω/cm, improves display effect and the touch-control effect of downstream display product.By the application to AZO material, simple to operate, with low cost, be very suitable for suitability for industrialized production, the problems such as making to substitute ITO application in touch-control touch-control display field becomes possibility, can solve ITO reserves limited, expensive.
AZO electro-conductive glass of a kind of touch-control display that the embodiment of the present invention provides and preparation method thereof.The resistivity of the AZO rete 13 of this AZO electro-conductive glass can accomplish 5*10
-4Ω/cm, make the electric conductivity of AZO conducting film close to ITO conducting film, visible light transmissivity is more than 84%; The preparation method of AZO electro-conductive glass of the present invention, by being first coated with one group of refractive index matching layers 12(IM layer on ultra-thin (2.0mm and following) glass substrate), be coated with the AZO rete 13 of one deck low-resistivity again, while playing excellent electric action, solve the problem of the obvious aberration after the groove of downstream, enhance the display effect of screen and the aesthetic feeling of outward appearance.AZO electro-conductive glass provided by the invention and preparation method thereof, simple to operate, with low cost, abundant raw materials, significant for alternative conventional I TO.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement or improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an AZO electro-conductive glass, comprise basalis, it is characterized in that, also comprise refractive index mutually to mate and the refractive index matching layers and the AZO rete that make visible ray generation destructive interference, described basalis, refractive index matching layers and AZO rete are cascading, and described AZO rete adopts Al-Doped ZnO to be sputtered at described refractive index matching layers by the mode of magnetically controlled DC sputtering.
2. AZO electro-conductive glass as claimed in claim 1, it is characterized in that, described refractive index matching layers comprises niobium pentaoxide rete and the silicon dioxide layer of stacked setting, and described niobium pentaoxide rete connects with described basalis, and described AZO rete connects with described silicon dioxide layer.
3. AZO electro-conductive glass as claimed in claim 2, it is characterized in that, the thickness of described niobium pentaoxide rete is 5nm to 20nm; The refractive index of described niobium pentaoxide rete is 2.20 to 2.40.
4. AZO electro-conductive glass as claimed in claim 2, it is characterized in that, the thickness of described silicon dioxide layer is 20nm to 60nm; The refractive index of described silicon dioxide layer is 1.40 to 1.50.
5. AZO electro-conductive glass as claimed in claim 1, it is characterized in that, the thickness of described AZO rete is 50nm to 300nm; The refractive index of described AZO rete is 1.85 to 1.95.
6. the preparation method for the manufacture of such as AZO electro-conductive glass according to any one of claim 1 to 5, it is characterized in that, comprise the following steps: prepare basalis, refractive index matching layers is coated with on described basalis, on described refractive index matching layers, be coated with refractive index mutually mate with described refractive index matching layers and make visible ray generation destructive interference AZO rete, and described AZO rete adopts Al-Doped ZnO to be sputtered at described refractive index matching layers by the mode of magnetically controlled DC sputtering.
7. preparation method as claimed in claim 6, it is characterized in that, the doping content of described Al-Doped ZnO is more than 2%.
8. preparation method as claimed in claim 1, is characterized in that, in the step being coated with refractive index matching layers, comprise the following steps: be coated with niobium pentaoxide rete and silicon dioxide layer successively; Wherein, be coated with niobium pentaoxide rete and comprise the steps: that basalis is heated to about 50 to 150 DEG C and enters niobium pentaoxide target position, Ar tolerance is at 150 to 200sccm, O
2tolerance is at 50 to 100sccm, and sputtering pressure is at 1.5*10
-3mba to 4*10
-3mba, in niobium pentaoxide target position, target used is twin target; Wherein, be coated with after silicon dioxide layer comprises the steps: to be coated with niobium pentaoxide rete and enter silicon target target position, Ar tolerance is at 150 ~ 200sccm, O
2tolerance controls to adopt PID to control, and control voltage is at 350V ~ 500V, and sputtering pressure is at 1.5*10
-3~ 4*10
-3, in silicon target target position, target used is twin target, and adopts Mid frequency alternative magnetron sputtering to be coated with silica coating on niobium pentaoxide rete.
9. preparation method as claimed in claim 6, is characterized in that, be coated with AZO rete and comprise the following steps, be coated with the workpiece after refractive index matching layers to enter bringing-up section and heat, DEG C enter AZO target position in heating temperatures to 300 ~ 400, Ar tolerance is at 150 ~ 300sccm, and sputtering pressure is at 4*10
-3~ 7*10
-3, adopt magnetically controlled DC sputtering on refractive index matching layers, be coated with AZO rete.
10. preparation method as claimed in claim 8, it is characterized in that, the thickness of described niobium pentaoxide rete is 9.5nm, and the thickness of described silica coating is 41nm, and the thickness of described AZO rete is 120nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410088074.5A CN104908378A (en) | 2014-03-11 | 2014-03-11 | AZO electrically conductive glass and production method thereof |
| HK16100899.4A HK1212952A1 (en) | 2014-03-11 | 2016-01-27 | An azo conductive glass and preparation method of the same azo |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410088074.5A CN104908378A (en) | 2014-03-11 | 2014-03-11 | AZO electrically conductive glass and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104908378A true CN104908378A (en) | 2015-09-16 |
Family
ID=54078004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410088074.5A Pending CN104908378A (en) | 2014-03-11 | 2014-03-11 | AZO electrically conductive glass and production method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104908378A (en) |
| HK (1) | HK1212952A1 (en) |
Cited By (1)
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| CN110981214A (en) * | 2019-12-19 | 2020-04-10 | 芜湖长信科技股份有限公司 | Liquid crystal panel toning glass and production process thereof |
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| Publication number | Publication date |
|---|---|
| HK1212952A1 (en) | 2016-06-24 |
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