CN104901631A - Power amplifying device - Google Patents
Power amplifying device Download PDFInfo
- Publication number
- CN104901631A CN104901631A CN201510333421.0A CN201510333421A CN104901631A CN 104901631 A CN104901631 A CN 104901631A CN 201510333421 A CN201510333421 A CN 201510333421A CN 104901631 A CN104901631 A CN 104901631A
- Authority
- CN
- China
- Prior art keywords
- triode
- circuit
- impedance matching
- resistance
- connects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
Abstract
The invention provides a power amplifying device, comprising an input matching circuit, an output matching circuit, a power amplifying circuit and a peripheral circuit. The peripheral circuit comprises a first resistor, a field-effect tube, a first triode, a second triode, a second resistor, a third resistor, a first capacitor, a second capacitor, a fourth resistor and a matching filtering circuit. The power amplifying circuit comprises a plurality of third triodes, a plurality of impedance matching inductors, a plurality of impedance matching resistors, a plurality of impedance matching capacitors and a plurality of independent power supplies. The emitters and the collectors of the plurality of third triodes are connected in series in turn. The input matching circuit is connected with the base of the first one of the plurality of third triodes, while the bases of the other third triodes are connected with the independent power supplies via the impedance matching inductors, and are grounded via the impedance matching capacitors and the impedance matching resistors, which are connected in series. The power amplifying device of the invention could avoid ohmic loss brought by inductive reactance.
Description
Technical field
The present invention relates to power control techniques field, particularly relate to a kind of power amplifier device.
Background technology
Power amplifier device is the radio frequency front-end devices in wireless communication system, is typically used as audio frequency amplifier and radio frequency amplifier, for generation of power stage to drive load.In radio frequency applications field, power amplifier device is necessary module, amplifies be coupled to antenna again before transmitting to signal.
The method of raising power amplifier device power output conventional is at present connected in series by power circuit, increases total output voltage to improve power output.The power amplifier device of this Series power synthesis is formed by connecting by several power circuit series stack, between power coupling, make each power circuit obtain maximum power output.But when operating frequency is higher, the parasitism input of power circuit in this power amplifier device, output capacitance effect are obvious, and now, best output loading be purely resistive, but emotional resistance, the easily ohmic loss that causes because of induction reactance of generation.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of power amplifier device, can avoid producing the ohmic loss caused by induction reactance.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of power amplifier device, comprise input matching circuit, output matching circuit, power amplification circuit and peripheral circuit, described peripheral circuit comprises the first resistance, field effect transistor, first triode, second triode, second resistance, 3rd resistance, first electric capacity, second electric capacity, 4th resistance and matched filtering circuit, described power amplification circuit comprises multiple 3rd triode, multiple impedance matching inductance, multiple impedance matching resistor, multiple impedance matching capacitances and multiple independent current source, described multiple 3rd triode is sequentially connected in series, the drain electrode of described field effect transistor and the collector electrode connected system power end of described first triode, the source electrode of described field effect transistor connects the collector electrode of described second triode by described first resistance, the grid of described field effect transistor connects the collector electrode of described second triode, the grounded emitter of described second triode, the base stage of described first triode connects the source electrode of described field effect transistor, and the emitter of described first triode connects the base stage of described second triode by described second resistance, the base stage of first the 3rd triode in described multiple 3rd triode connects the emitter of described first triode by described 3rd resistance, the grounded emitter of first the 3rd triode, the emitter of all the other the 3rd triodes in described multiple 3rd triode is connected with the collector electrode of previous 3rd triode respectively, base stage is connected to described independent current source respectively by described impedance matching inductance, and by the impedance matching capacitances that is connected in series and impedance matching resistor ground connection, described input matching circuit connects the base stage of first the 3rd triode in described multiple 3rd triode by described first electric capacity, between the collector electrode that described second electric capacity and described matched filtering circuit are connected to last the 3rd triode in described multiple 3rd triode and described output matching circuit, described second resistance is connected between described output matching circuit and ground.
Be different from the situation of prior art, the invention has the beneficial effects as follows: power amplification circuit adopts multistage triode to amplify, without the need to using inductance to realize power match, only need can realize impedance transformation by the impedance matching resistor of each transistor base, thus can avoid producing the ohmic loss caused by induction reactance, can power output be improved.
Accompanying drawing explanation
Fig. 1 is the principle schematic of embodiment of the present invention power amplifier device.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
See Fig. 1, it is the principle schematic of embodiment of the present invention power amplifier device.The power amplifier device of the present embodiment comprises input matching circuit, output matching circuit, power amplification circuit and peripheral circuit.Peripheral circuit comprises the first resistance R1, field effect transistor M, the first triode Q1, the second triode Q2, the second resistance R2, the 3rd resistance R3, the first electric capacity C1, the second electric capacity C2, the 4th resistance R4 and matched filtering circuit.Power amplification circuit comprises multiple 3rd triode Q3, multiple impedance matching inductance L, multiple impedance matching resistor R5, multiple impedance matching capacitances C3 and multiple independent current source E, and multiple 3rd triode Q3 is sequentially connected in series.
The drain electrode of field effect transistor M and the collector electrode connected system power end Vcc of the first triode Q1, the source electrode of field effect transistor M connects the collector electrode of the second triode Q2 by the first resistance R1, the grid of field effect transistor M connects the collector electrode of the second triode Q2, the grounded emitter of the second triode Q2, the base stage of the first triode Q1 connects the source electrode of field effect transistor M, and the emitter of the first triode Q1 connects the base stage of the second triode Q2 by the second resistance R2.
The base stage of first the 3rd triode Q3 in multiple 3rd triode Q3 connects the emitter of the first triode Q1 by the 3rd resistance R3, the grounded emitter of first the 3rd triode Q3, the emitter of all the other the 3rd triode Q3 in multiple 3rd triode Q3 is connected with the collector electrode of previous 3rd triode Q3 respectively, base stage is connected to independent current source E respectively by impedance matching inductance L, and by the impedance matching capacitances C3 that is connected in series and impedance matching resistor R5 ground connection.
Input matching circuit connects the base stage of first the 3rd triode Q3 in multiple 3rd triode Q3 by the first electric capacity C1, between the collector electrode that second electric capacity C2 and matched filtering circuit are connected to last the 3rd triode Q3 in multiple 3rd triode Q3 and output matching circuit, the second resistance R2 is connected between output matching circuit and ground.
Wherein, the power amplifier device of the present embodiment operationally, field effect transistor M receiving system power source voltage Vcc, and in the base stage of the first triode Q1, export the first electric current according to this voltage, first resistance R1 exports the second electric current to the second triode Q2, first resistance R1 is in order to set the size of bias current, the first triode Q1 is triggered by the first electric current, and by the first triode Q1, second resistance R2, the action of the 3rd resistance R3 and the second triode Q2, export the base stage of bias current to the first a 3rd triode Q3, bias state is operated in make first the 3rd triode Q3.
After input matching circuit output signal, amplified further by power amplification circuit again, wherein, second triode in multiple triode Q to the base stage of last triode except being connected to independent current source E, also by impedance matching capacitances C3 and the impedance matching resistor R3 ground connection of series connection, this impedance matching resistor R3 can show certain inductive at the transmitter of triode Q, can regulate the inductive size of the input impedance of triode Q by regulating the size of impedance matching resistor R3.In addition, electric capacity essentially dictates the active component of transistor input impedance, therefore impedance matching capacitances C3 can be regulated for second triode to determine input impedance to the input impedance of last triode, finally can make the optimum load impedance required for next triode of each triode, thus can avoid producing the ohmic loss caused by induction reactance, improve power stage efficiency.
The power amplification circuit of the power amplifier device of the embodiment of the present invention adopts multistage triode to amplify, without the need to using inductance to realize power match, only need can realize impedance transformation by the impedance matching resistor of each transistor base, thus can avoid producing the ohmic loss caused by induction reactance, can power output be improved.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (1)
1. a power amplifier device, it is characterized in that, comprise input matching circuit, output matching circuit, power amplification circuit and peripheral circuit, described peripheral circuit comprises the first resistance, field effect transistor, first triode, the second triode, the second resistance, the 3rd resistance, the first electric capacity, the second electric capacity, the 4th resistance and matched filtering circuit, described power amplification circuit comprises multiple 3rd triode, multiple impedance matching inductance, multiple impedance matching resistor, multiple impedance matching capacitances and multiple independent current source, and described multiple 3rd triode is sequentially connected in series;
The drain electrode of described field effect transistor and the collector electrode connected system power end of described first triode, the source electrode of described field effect transistor connects the collector electrode of described second triode by described first resistance, the grid of described field effect transistor connects the collector electrode of described second triode, the grounded emitter of described second triode, the base stage of described first triode connects the source electrode of described field effect transistor, and the emitter of described first triode connects the base stage of described second triode by described second resistance;
The base stage of first the 3rd triode in described multiple 3rd triode connects the emitter of described first triode by described 3rd resistance, the grounded emitter of first the 3rd triode, the emitter of all the other the 3rd triodes in described multiple 3rd triode is connected with the collector electrode of previous 3rd triode respectively, base stage is connected to described independent current source respectively by described impedance matching inductance, and by the impedance matching capacitances that is connected in series and impedance matching resistor ground connection;
Described input matching circuit connects the base stage of first the 3rd triode in described multiple 3rd triode by described first electric capacity, between the collector electrode that described second electric capacity and described matched filtering circuit are connected to last the 3rd triode in described multiple 3rd triode and described output matching circuit, described second resistance is connected between described output matching circuit and ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510333421.0A CN104901631A (en) | 2015-06-16 | 2015-06-16 | Power amplifying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510333421.0A CN104901631A (en) | 2015-06-16 | 2015-06-16 | Power amplifying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104901631A true CN104901631A (en) | 2015-09-09 |
Family
ID=54034066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510333421.0A Pending CN104901631A (en) | 2015-06-16 | 2015-06-16 | Power amplifying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104901631A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| EP3972127A1 (en) * | 2020-09-21 | 2022-03-23 | pSemi Corporation | Impedance control in merged stacked fet amplifiers |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6556085B2 (en) * | 2000-12-28 | 2003-04-29 | Korea Advanced Institute Of Science And Technology | Low power low noise amplifier |
| US20070285175A1 (en) * | 2004-12-02 | 2007-12-13 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
| CN103269205A (en) * | 2013-06-04 | 2013-08-28 | 苏州英诺迅科技有限公司 | Power amplifier |
| CN103580626A (en) * | 2012-07-31 | 2014-02-12 | 英特尔移动通信有限责任公司 | Differential stacked output stage for power amplifiers |
| CN104426486A (en) * | 2013-08-27 | 2015-03-18 | 特里奎恩特半导体公司 | Bias-boosting bias circuit for radio frequency power amplifier |
| CN204633718U (en) * | 2015-06-16 | 2015-09-09 | 成都宜川电子科技有限公司 | Power amplifier device |
-
2015
- 2015-06-16 CN CN201510333421.0A patent/CN104901631A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6556085B2 (en) * | 2000-12-28 | 2003-04-29 | Korea Advanced Institute Of Science And Technology | Low power low noise amplifier |
| US20070285175A1 (en) * | 2004-12-02 | 2007-12-13 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
| CN103580626A (en) * | 2012-07-31 | 2014-02-12 | 英特尔移动通信有限责任公司 | Differential stacked output stage for power amplifiers |
| CN103269205A (en) * | 2013-06-04 | 2013-08-28 | 苏州英诺迅科技有限公司 | Power amplifier |
| CN104426486A (en) * | 2013-08-27 | 2015-03-18 | 特里奎恩特半导体公司 | Bias-boosting bias circuit for radio frequency power amplifier |
| CN204633718U (en) * | 2015-06-16 | 2015-09-09 | 成都宜川电子科技有限公司 | Power amplifier device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| CN109951162B (en) * | 2019-03-08 | 2023-04-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| EP3972127A1 (en) * | 2020-09-21 | 2022-03-23 | pSemi Corporation | Impedance control in merged stacked fet amplifiers |
| EP4120562A1 (en) * | 2020-09-21 | 2023-01-18 | pSemi Corporation | Impedance control in merged stacked fet amplifiers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1245799C (en) | Variable gain amplifier | |
| CN102130658B (en) | Feedback biasing for cascode amplifiers | |
| CN103023440A (en) | Circuit for improving linearity of power amplifier | |
| CN105324936A (en) | Power amplification module | |
| CN101788598A (en) | Voltage peak detection circuit and operating method thereof | |
| CN204633717U (en) | Power amplifier | |
| CN104901631A (en) | Power amplifying device | |
| CN102790591B (en) | High frequency power amplifier | |
| CN104901632A (en) | Power amplifier | |
| CN102882476B (en) | High-bandwidth amplifying circuit | |
| CN102723917A (en) | Power amplifier | |
| CN204633718U (en) | Power amplifier device | |
| CN102570985A (en) | Power amplifying circuit for powerline multicarrier communication systems | |
| CN102594288A (en) | Stage matching circuit of radio-frequency power amplifier | |
| CN114172476B (en) | Broadband negative feedback amplifier | |
| CN203104364U (en) | Low-noise amplifying circuit and low-noise amplifier with low-noise amplifying circuit | |
| CN201726363U (en) | Circuit capable of improving linearity and power-added efficiency of power amplifier | |
| CN101882913A (en) | Circuit for improving linearity and power added efficiency of power amplifier | |
| CN104362987B (en) | ultra-wideband variable gain amplifier | |
| CN203180852U (en) | Integrated power amplifier interstage signal coupling circuit | |
| CN203537321U (en) | Weak mechanical vibration wave signal processing circuit | |
| CN204131470U (en) | A kind of shortwave 4W power amplifier | |
| CN202906838U (en) | High frequency bandwidth amplifier circuit | |
| RU2012103488A (en) | TWO-STAGE AMPLIFIER | |
| CN101882915B (en) | Push-pull type radio-frequency power amplifier with improved linearity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150909 |
|
| RJ01 | Rejection of invention patent application after publication |