CN104900803B - A kind of magnetic sensor device of non-linear enhancing magnetic resistance and preparation method thereof - Google Patents
A kind of magnetic sensor device of non-linear enhancing magnetic resistance and preparation method thereof Download PDFInfo
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- CN104900803B CN104900803B CN201510284569.XA CN201510284569A CN104900803B CN 104900803 B CN104900803 B CN 104900803B CN 201510284569 A CN201510284569 A CN 201510284569A CN 104900803 B CN104900803 B CN 104900803B
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Abstract
The invention discloses a kind of magnetic sensor device of non-linear enhancing magnetic resistance and preparation method thereof.The device is made by semiconductor non-linear unit and magnet unit are compound.The resistance variations of the quick high low resistance state transformation of the non-linear formation one of semiconductor, the extraordinary Hall effect in magnet unit cause this high low resistance state varying offset, therefore in specific electric current section, can obtain abnormal huge magnetic resistance (>104%).On the other hand, the extraordinary Hall effect of magnetic membrane material is very sensitive to small magnetic field (~mT), so the device can produce huge magnetic resistance under the magnetic field of very little, magnetic sensitivity is more than 105%/mT.The device also has special magnetoelectricity symmetry, can be used for realizing programmable magnetoelectricity logical operation.The device is cheap, and preparation technology is simple, is a kind of excellent magnetic sensor device, has great potential application in the magnetic electronic industrial technical field in future.
Description
Technical field
The invention belongs to magnetic electron device technical field, and in particular to it is a kind of it is non-linear enhancing magnetic resistance magnetic sensor device and
Its preparation method.
Background technology
The magnetoresistance (abbreviation magnetic resistance) that effect is notable and magnetic field sensitivity is high, as magnetic storage and the core of magnetic sensing technology
The heart, all have broad application prospects in disk magnetic reading head, digital compass, moving component monitoring etc., therefore it is always
It is scientific circles and target that industrial quarters is seek assiduously.Commercial magnetic sensor device is mainly based upon the magnetic of GMR and TMR effects at present
Property metallic multilayer membrane material or semiconductor-based magnetoresistive element.The former possesses more preferable downfield sensitivity, but due to gold
Belong to material and leading semiconductor silicon materials are incompatible, technological requirement is high, therefore these sensitive Magnetic Sensors are difficult to collect on a large scale
Into into existing main flow silicon technology, and the continuing to lift up for magnetic resistance value of existing structure also encounters bottleneck.Although the latter is not
The problem of material compatibility and small magnetic resistance value be present, but the magnetic field sensitivity of semiconductor-based magnetoresistive element is relatively low, generally requires
The magnetic field of tesla's magnitude, this greatly limits its application.How to design one kind has the big magnetoresistive of downfield
Can magnetic electron device, be scientific circles and industrial quarters there is an urgent need to.It, which can not only be greatly improved, existing is largely based on magnetic resistance
The performance of the magnetic electron device of effect, moreover it is possible to new magnetic electron device is developed, it is significant.
Recent years, many researchers attempt to design various new magnetoresistance devices.In terms of magnetic material magnetoresistance device, method
State scientist Fert and Germany scientist Gruenberg take the lead in proposing giant magnetoresistance effect, in the magnetic material before magnetic resistance value ratio
The big magnitude of anisotropic magnetoresistive, once it has been observed that be generalized to industrial quarters rapidly, promoted entering for information industry
Step.Later by improvement of the scientists to material preparation process and the optimization of structure, the magnetic resistance value of maximum 600% is realized,
Operating fields are 4mT or so (Appl.Phys.Lett.93,0825082008).After this, magnetic resistance value is difficult to be carried always
Rise.
In terms of semi-conducting material magnetoresistance device, particularly Si bases magnetoresistance device, Japanese Scientists Delmo et al.
(Nature 457,11122009) has invented a kind of magnetoresistance device of pure Si bases.Their device is realized under room temperature 3T magnetic fields
103% magnetoresistance.Then, 2011, Chinese Scientists Zhang Xiaozhong et al. (Nature 477,3042011) invented one
Magnetoresistance device of the kind based on diode enhancing, operating fields are lower, realize under room temperature 0.07T magnetic fields under 10% and 0.2T magnetic fields
100% electricresistance effect.But this operating fields is for many Magnetic Sensor fields, such as magnetic reading head, digital compass
Still it is too big, hinder further application.In addition, scientists it is also proposed the compound magnetoelectricity of semiconductor/magnetic material
Sub- device, be mainly based upon stray field using magnetic material, it is necessary to magnetic field it is still larger, and room temperature magnetic resistance value is not high.
The content of the invention
The present invention non-linear enhancing magnetic resistance have before the unapproachable performance of magnetic sensor arrangement：It is abnormal huge
Magnetic resistance value performance and excellent downfield sensitivity.Using the non-linear of semiconductor, the magnetic resistance of device of the present invention can reach
104More than %；Characteristic using perpendicular magnetization material to magnetic-field-sensitive, the operating fields of device can be less than 1mT.The device is also
With special magnetoelectricity symmetry, it can be used to make programmable magnetoelectricity logical operation device, therefore this non-linear magnetic resistance
Magnetic Sensor will possess extensive practical application foreground.
It is an object of the invention to provide a kind of magnetic sensor device of non-linear enhancing magnetic resistance and preparation method thereof.Particular technique
Scheme is as follows：
A kind of magnetic sensor device of non-linear enhancing magnetic resistance, by magnetic material unit and the compound system of semiconductor non-linear unit
；The magnetic material unit has 4 electrodes, wherein 2 are used to connect current source, 2 connection voltmeters in addition；Magnetic material
Unit and semiconductor non-linear unit are according to being necessarily linked in sequence.
Further, described magnetic material unit is magnetic metal material, magnetic semiconductor material, multi-iron material or they
Complex.
Further, described magnetic material unit is multi-layer film structure, particle membrane structure or block structure.
Further, described magnetic material unit is rectangle or circle.
Further, the magnetization characteristic of described magnetic material unit is perpendicular magnetization or anisotropy of magnetic susceptibility.
Further, the magnetic material unit is rectangle, and length-width ratio (WC/LC) it is more than 0.1.
Further, the semiconductor non-linear unit is p-n diodes, and Zener diode, ionization by collision diode, field is imitated
It should manage or artificial lattice's diode.
Further, the material of the semiconductor non-linear unit is Si, Ge, GaAs, InSb.
Further, the i-v curve of the semiconductor non-linear unit is non-linear.
Further, described connected mode is parallel connection one between two electrodes in one long side of magnetic material unit
Each semiconductor non-linear unit in parallel between semiconductor non-linear unit, or two pairs of electrodes in two long sides.
The preparation method of the magnetic sensor device of above-mentioned non-linear enhancing magnetic resistance, comprises the following steps, in monocrystalline silicon sheet surface
Deposited magnetic metal material or magnetic semiconductor, and deposit protective layer in outermost layer；Annealing, obtains magnetic metal material unit；
Lead is drawn as electrode on magnetic material unit using the method for ultrasonic bonding；Wherein semiconductor is connected between two electrodes
Non-linear unit, obtain non-linear enhancing magneto-resistive magnetic sensors part.
Further, the magnetic metal material has MgO-CoFeB-Ta structures.
Further, the protective layer is SiO2。
Beneficial effects of the present invention are：
1st, resulting device is at a temperature of 300K, can obtain very huge magnetic resistance value, and its value can be more than 2 ×
104%；
2nd, resulting device is very sensitive to magnetic field at a temperature of 300K, can reach more than 10 in ± 1mT4%
Magnetic resistance change rate, maximum magnetic sensitivity is more than 105%/mT；
3rd, resulting device has special magnetoelectricity symmetry at a temperature of 300K, can be programmable for realizing
Magnetoelectricity logical operation；
4th, the device architecture is simple, and the prices of raw materials are moderate, compatible with existing silicon electronic industrial technology.
Brief description of the drawings
Fig. 1 is the magnetic sensor device structure and magnetoelectricity instrumentation plan of the non-linear enhancing magnetic resistance of embodiment 1；
Fig. 2 is magneto-electric behavior curve of the magnetic sensor device of the non-linear enhancing magnetic resistance of embodiment 1 under saturated magnetization；
Fig. 3 is the magnetic sensor device magnetic resistance of the non-linear enhancing magnetic resistance of embodiment 1 with the distribution curve of loading current；
Fig. 4 is that magnetoelectricity of the magnetic sensor device of the non-linear enhancing magnetic resistance of embodiment 2 under fixed current and different magnetic field is special
Linearity curve；
Fig. 5 is that embodiment 3 may be programmed magnetoelectricity logical device structure and magnetoelectricity instrumentation plan；
Fig. 6 is that embodiment 3 may be programmed magneto-electric behavior curve of the magnetoelectricity logical device under different configurations.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings：
The implication of each label is as follows in accompanying drawing：The magnetic sensor device of the non-linear enhancing magnetic resistance of 01-, 02- power meters, 03- electricity
Table is pressed, 04- may be programmed magnetoelectricity logical device, 11- Zener diodes, 12- magnetic membrane materials, 13,14,15,16- electrodes；18,
20- is switched.Embodiment 1
The cleaning monocrystalline silicon of thermal oxide layer thick 500nm is clean, the MgO-CoFeB-Ta knots of deposition strip on surface
Structure magnetic membrane material 12 (Fig. 1), and deposit one layer of SiO in outermost layer2As protective layer.Then moved back at a certain temperature
Fire, achieve good perpendicular magnetic anisotropy.With the method for ultrasonic bonding, on four angles of strip magnetic metal multilayer film
Four leads are drawn respectively.Finally, according to one Zener diode 11 of connection shown in Fig. 1 between electrode 13 and 16.So far one
Individual non-linear enhancing magneto-resistive magnetic sensors part 01 completes with regard to preparing.
Prepared magnetic membrane material 12 carries out structural characterization by TEM (JEOL-2011), and it is polycrystalline structure to show it；
Magnetic electricity performance measurement is measured with the four electrode method shown in Fig. 1, is provided constant current by Keithley2400 power meters 02 and is come from short side
Two electrodes 13 and 14, and the electricity between an other short side Top electrode 15 and 16 is measured by Keithley2182 voltmeters 03
Pressure drop；Magnetic field is provided by homemade electromagnet, and with the PPMS test platform double verifications of Quantum companies, defines magnetic field
Direction vertical metal film is positive direction downwards.
Fig. 2 is the obtained non-linear enhancing magneto-resistive magnetic sensors part 01 of the present embodiment in room temperature (300K), positive and negative saturation magnetic
Magneto-electric behavior curve under the conditions of field (± 10mT).Figure it is seen that under conditions of positive flux field (10mT), go out on curve
An existing transformation by low resistance state to high-impedance state, transformation electric current is near 13.4mA.Under conditions of negative fluxfield (- 10mT), this
The transformation of individual high low resistance state is still present, but changes electric current and be reduced near 13.0mA.In the two transformation electric current sections
Interior, the resistance under positive and negative saturation magnetic field has more than the great variety of 2 magnitudes.Here, define saturation magneto-resistor be MR (I)=
[R-(I)-R+(I)/R+(I)] × 100%, wherein R+ (-)(I) represent in electric current to be I and the resistance value just under (negative) saturation magnetic field.
According to this definition, the magnetic resistance of this device can reach 23 under particular load electric current, 000% (such as Fig. 3), and this numerical value is long-range
In the TMR of existing MgO bases maximum (~600%).
Embodiment 2
The magnetic sensor device 01 of the non-linear enhancing magnetic resistance prepared with method in the same manner as in Example 1, and use and reality
Identical magnetoelectricity measuring method in example 1 is applied, under the conditions of room temperature (300K), loading current are 13.4mA, changes magnetic field, measures magnetic
Electrical transport.Here, it is MR (B)=[R (B)-R to define magneto-resistor+/R+] × 100%, wherein R (B) and R+Represent to work as respectively
Resistance value when electric current is 13.4mA under externally-applied magnetic field B and positive saturation magnetic field.According to this definition, the maximum magnetic resistance of this device
23,000% can be reached, and operating fields scope can be between ± 1mT (such as Fig. 4).When magnetic is overturn, maximum magnetic flux is sensitive
Degree reaches 1.7 × 105%/mT (such as Fig. 4), far above existing magneto-resistive magnetic sensors.
Embodiment 3
On the basis of the magnetic sensor device 01 of non-linear enhancing magnetic resistance in embodiment 1, improved by structure, utilize it
Special magnetoelectricity symmetry realizes programmable magnetoelectricity logical operation.
The perpendicular magnetization magnetic membrane material 12 prepared using technique in the same manner as in Example 1, between electrode 13 and 16
Plus Zener diode 11 and switch 18, plus Zener diode 11 and switch 20 between electrode 14 and 15, magnetic is electrometric
Method is same as Example 1.So far a programmable magnetoelectricity logical device 04 based on non-linear enhancing magneto-resistive magnetic sensors part
Completed (Fig. 5) with regard to preparing.
When switch 18 is in the conduction state, when switch 20 is off, we are defined as configuring A, can compile
Journey magnetoelectricity logical device 04 will be degenerated to the non-linear enhancing magneto-resistive magnetic sensors part 01 in embodiment 1.When switch 18 is in
Off-state, when switch 20 is in the conduction state, we are defined as configuring B, and programmable magnetoelectricity logical device 04 shows
Go out the magneto-electric property similar with non-linear enhancing magneto-resistive magnetic sensors part 01, but the magneto-electric response for aligning negative fluxfield is just the opposite
(Fig. 6).We are using upper (lower) 0 (1) as the input of magnetic logic of the direction of magnetization of perpendicular magnetization magnetic metal multilayer film, with measurement
1 (0) that the height (low) of obtained resistance exports as electric logic.In the sample of the present embodiment, when in configuration A, loading
When electric current is 13.4mA, the measurement resistance when input of magnetic logic is 0 (1) is 1.8 × 10-1Ω(8.1×10-4Ω).We define
Output resistance is more than (being less than) 10-1Ω is that electric logic exports 1 (0), then logical operation now is duplication computing (COPY).When
During in configuration B, when loading current is 13.4mA, the measurement resistance when input of magnetic logic is 0 (1) is 1.3 × 10-3Ω(1.7
×10-1Ω), logical operation now is no computing (NOT).
Therefore, may be programmed magnetoelectricity logical device 04 can realize programmable magnetoelectricity logical operation, and this logical operation
The volatile magnetic storage of mode right and wrong is combined, and can improve arithmetic speed, reduces power consumption.Importantly, have benefited from non-thread
Property enhancing magnetic resistance mechanism, logical operation 1/0 logic output ratio reached more than 100, than existing magnetoelectricity logical device
1/0 logic output ratio is all high.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
It is defined.
Claims (7)
1. a kind of magnetic sensor device of non-linear enhancing magnetic resistance, it is characterised in that non-linear by magnetic material unit and semiconductor
Unit is compound to be made；The magnetic material unit has 4 electrodes, wherein 2 are used to connect current source, 2 connect voltage in addition
Table；The connected mode of the magnetic material unit and semiconductor non-linear unit is：
Each semiconductor non-linear unit in parallel between two pairs of electrodes in two long sides, formed with magnetoelectricity symmetry
Programmable magnetoelectricity logical operation device；
Described magnetic material unit is magnetic metal material, magnetic semiconductor material, multi-iron material or their complex；Institute
The magnetic material unit stated is multi-layer film structure, particle membrane structure or block structure, and the magnetization of described magnetic material unit is special
Property is perpendicular magnetization or anisotropy of magnetic susceptibility.
2. magnetic sensor device according to claim 1, it is characterised in that the magnetic material unit is rectangle, and length and width
Than more than 0.1.
3. magnetic sensor device according to claim 1, it is characterised in that the semiconductor non-linear unit is the poles of p-n bis-
Pipe, ionization by collision diode, FET or artificial lattice's diode.
4. magnetic sensor device according to claim 1, it is characterised in that the material of the semiconductor non-linear unit is
Si, Ge, GaAs, InSb.
5. according to the preparation method of any one of the claim 1-4 magnetic sensor devices, it is characterised in that comprise the following steps,
Protective layer is deposited in monocrystalline silicon sheet surface deposited magnetic metal material or magnetic semiconductor, and in outermost layer；Annealing, obtains magnetic
Metal material unit；Lead is drawn as electrode on magnetic material unit using the method for ultrasonic bonding；Two electrode wherein
Between connect semiconductor non-linear unit, obtain it is non-linear enhancing magneto-resistive magnetic sensors part.
6. preparation method according to claim 5, it is characterised in that the magnetic metal material has MgO-CoFeB-Ta
Structure.
7. preparation method according to claim 5, it is characterised in that the protective layer is SiO2。
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| CN105355701B (en) * | 2015-09-15 | 2017-07-07 | 电子科技大学 | A kind of new photoconductive detector |
| CN105742483B (en) * | 2016-03-07 | 2018-01-12 | 浙江理工大学 | Low temperature Magnetic Sensor based on carrier regulation and control metal-insulator transition temperature and preparation method thereof |
| CN110345938B (en) * | 2019-06-25 | 2021-08-31 | 潍坊歌尔微电子有限公司 | Wafer-level magnetic sensor and electronic equipment |
Citations (1)
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| CN103885005A (en) * | 2012-12-21 | 2014-06-25 | 磁感科技香港有限公司 | Magnetic sensing device and magnetic sensing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103885005A (en) * | 2012-12-21 | 2014-06-25 | 磁感科技香港有限公司 | Magnetic sensing device and magnetic sensing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature;Jimin Wang等;《JOURNAL OF APPLIED PHYSICS》;20130717(第114期);正文第1页右栏实验部分；附图1（a） * |
| Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory;Zhaochu Luo等;《Advanced Functional Materials》;20141110(第25期);全文 * |
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