CN104900746A - Three-primary-color photoelectric detection method based on radial junction lamination structure - Google Patents
Three-primary-color photoelectric detection method based on radial junction lamination structure Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a three-primary-color photoelectric detection method based on a radial junction lamination structure, and the method comprises the steps: growing a plurality of amorphous silicon layers of different doping types on the surface of a vertical silicon nanowire in a covering manner, and forming a two-layer PIN structure from the inside to the outside; depositing an ITO transparent conductive film between the two layers of the structure, so as to detect a photoelectric detection response current of the inner and outer layers; enabling the intrinsic amorphous silicon of the outer layer of the PIN structure to serve as an absorption layer for stronger response to incident light at a short wave band (slightly blue) based on a cavity mode coupling characteristics of an obtained junction structure; enabling the intrinsic amorphous silicon of the inner layer of the PIN structure to respond to light at a long band more strongly; enabling the light response band to be the intersection part of the inner and outer layers of the PIN structure when the inner and outer layers of the PIN structure are connected in series, and achieving the independent detection of three primary colors within an visible optical band, wherein the detection technology employs the response difference of the two-layer p-i-p structure to different wave bands. The structure shows great advantages in the photoelectric detection of retina three primary colors: material reduction, process shortening, voltage reduction, sensitivity improvement, and good work stability.
Description
One, technical field
The present invention relates to a kind of retina detecting technique for distinguishing visible light wave range different colours, particularly about the detection utilizing the cavity modes coupled characteristic of radial junction laminated construction, only use a kind of semi-conducting material (amorphous silicon a-Si:H) just can realize at least three kinds of color visible.
Two, technical background
Along with the develop rapidly of electronic technology, the requirement of people to IMAQ and image procossing is more and more higher.Color is distinguished in IMAQ, is played vital effect, and hyundai electronics type society controls to propose strict requirement to colour of solution and quality of colour.So, color sensing technology is one of core technology of modern color measurement instrument, it not only can replace human eye to make objective evaluation to product colour difference at industrial circle realizing unified industrial detection standard, even can realize the medical science sexual functions such as artificial retina in bionic field.
Present stage typical RGB (red green blue tricolor) color differentiating method can be divided into two kinds, and a kind of is the rgb filters covered on independently photodiode through revising, and analyzes and determines color by the color-ratio of different filter; Another kind is exactly utilize the photosensitive material of at least two kinds of different energy gaps to form several different interface to detect the incident light of different-waveband, then obtains the wave band distribution in incident light.These two kinds of methods, or be at device complexity, circuit complexity there is larger inferior position in external circuits module, or is exactly that more complicated prepared by material, and interface comparison is loaded down with trivial details, and detection performance more can reduce along with the growth of service time.
Three, summary of the invention
For the problems referred to above, the object of the invention is, provide a kind of novel radial junction laminated construction for the photodetection of retina three primary colors, this kind of structure has following several obvious advantage: detecting material used cheaply and easily prepare; Sensitivity is higher; Operating voltage is low; Be expected to improve device stability simultaneously.
To achieve these goals, the present invention is by the following technical solutions: a kind of novel radial junction laminated construction for three primary colors photodetection, it is characterized in that: the amorphous silicon covering the different doping type of growth multilayer at vertical surface of silicon nanowires, forms two-layer PIN structural from inside to outside; And between double-layer structure deposit one deck ITO nesa coating to detect inside and outside two-layer photodetection response current; Based on the cavity modes coupled characteristic of the radial junction structure obtained, the intrinsic amorphous silicon of outer PIN structural has as the incident light of absorbed layer to short-wave band (partially blue) and responds more by force; Internal layer PIN structural the light of intrinsic amorphous silicon to long-wave band (partially red) have and respond more by force; When inside and outside two-layer series connection, photoresponse wave band is both common factor part, realizes only detecting respectively trichromatic in visible light wave range with a kind of detecting material; And due to these Detection Techniques utilize be two-layer p-i-n junction structure to the difference in response of different-waveband, even if so also can distinguish well under low light condition.
The described amorphous silicon for photosensitive semi-conducting material can be replaced by polysilicon, nanocrystal silicon or amorphous germanium; As long as any one semi-conducting material of photo-generated carrier can be produced in target acquisition wave band.
Further, the radial junction laminated construction photodetection structure for retina three primary colors are distinguished: formed three-dimensional rack with the vertical silicon nanowires of P type doping, and the amorphous silicon of the different doping type of coated multilayer forms laminate PIN structure; The pattern of nano-bracket can be nano wire, the combination of one or more in nano-pillar or nano pyramid structure.
Substrate uses heavily doped silicon chip, common glass sheet, a series of inexpensive substrate such as quartz plate or stainless steel metal sheet.
The pattern of the nano-bracket of the described radial junction laminated construction for three primary colors photodetection is nano wire, nano-pillar, the combination of one or more in nanometer rods or nano pyramid structure.
The described nanowire array structure for forming radial junction lamination framework can be grown by induction mode from bottom to top and form, also top-down etching mode can be used to form nano-wire array, and etching mode comprises solwution method wet etching or RIE dry etching etc.
Utilize the sunken luminous effect (light-trapping) of radial junction structure, greatly can strengthen this lamination p-i-n junction structure and the absorption of incident light is responded, improve response current thus improve detectivity.This means to use thinner absorbed layer (<100nm) to obtain relative to the onesize even larger photoelectric respone of planar structure (1 ~ 2), greatly saved materials'use.
The inducing metal of described silicon nanowires is Sn, also can be the custom catalystses such as In, Au, Fe, Ni, Ga, Al.Induce with Sn is because the fusing point of Sn is lower herein, like this can so that prepare nano wire radial junction laminated construction in the inexpensive substrate such as glass.
The method of described nano thread structure and film preparation is, PCVD (PECVD) also can be low pressure gas phase deposition (LPCVD), chemical vapour deposition (CVD) (CVD), laser ablation deposition (LAD), thermal evaporation, electron beam evaporation (EBE), magnetron sputtering, sol-gel process etc.
Described is pass into impurity gas PH in growth course or film deposition process as the silicon nanowires of three-dimension-framework and the doping techniques of outer membrane
3or B
2h
6thus realize N-type or the doping of P type.Also the methods such as diffusion or ion implantation can be utilized to obtain the film of different doping type thus obtain laminate PIN structure.
The doping way of described plural layers can be pass into PH in deposition process
3or B
2h
6deng doping source of the gas, also can be utilize the modes such as diffusion or ion implantation to realize doping after deposition to grow N-type amorphous silicon or P-type non-crystalline silicon respectively.
Specifically, for the radial junction laminated construction preparation method (prepared by the primaries electric explorer based on radial junction laminated construction) that retina three primary colors are distinguished, its step comprises:
1) thickness is adopted to be that the common glass sheet of 0.2 ~ 0.5mm or heavily doped silicon chip are as substrate;
2) adopt Conventional cleaning method substrate surface, if glass substrate, sputter Al-Doped ZnO (AZO) film of one deck (about 10nm) after cleaning as hearth electrode;
3) at the Sn of substrate surface evaporation one deck 1 ~ 2nm as catalyst;
4) hydrogen plasma process thus form the Sn particle of about 20 ~ 40nm in pecvd; Heat up with the growth of VLS method; Silane and borine growth diameter about 40nm is passed into, the P-type silicon nano-wire array of length 1 microns at 520 DEG C;
5) the N-type amorphous silicon of the intrinsic hydrogenated amorphous silicon and 10nm that deposit about 50nm in pecvd at 200 DEG C successively forms the PIN structural of internal layer; And then sputter the thick ITO of the about 50nm of one deck as central, clear electrode with magnetron sputtering;
6) the N-type amorphous silicon of the intrinsic hydrogenated amorphous silicon and about 10nm that and then in pecvd deposit P-type non-crystalline silicon, the about 30nm of about 10nm successively at 200 DEG C forms outer field PIN structural; Then the ito thin film of the about 50nm of one deck is sputtered as top electrode with magnetron sputtering again;
7) finally use shadow mask evaporation Ag as grid line again.
Beneficial effect of the present invention: structure of the present invention only needs a kind of with low cost and junction structure preparing semi-conducting material amorphous silicon (a-Si:H) of mature preparation process, just can realize the photodetection to RGB three kinds of colors.With the cavity modes coupled characteristic of radial junction structure, under PECVD silane and impurity gas atmosphere, with the large-scale vertically silicon nanowire array of low-melting-point metal (Sn or In etc.) induced growth in inexpensive substrate, and the amorphous silicon of the different doping type of wrapped multiple forms the p-i-n junction structure of lamination, and with tin indium oxide (ITO) as transparency electrode, because ectonexine intrinsic amorphous silicon is different to the spectral response of different-waveband incident light, by gathering and comparing the current response of ectonexine, thus trichromatic photodetection in visible ray all band can be realized.Because the operating voltage of this structure is determined, so operating voltage is lower by the open circuit voltage of PIN structural; And sensitivity is better.
Operating voltage of the present invention is lower than 1V, and sensitivity is higher, even if also can have good resolution under low light environment.This technology utilizes the cavity modes coupled characteristic of radial junction structure dexterously, the amorphous silicon of PECVD film deposition technique wrapped multiple different levels of doping on the vertical silicon nanowires of low-melting-point metal (Sn or In etc.) induced growth is utilized to form the p-i-n junction structure of lamination, and with tin indium oxide (ITO) as transparency electrode.The present invention adopts a kind of radial junction laminated construction based on nano-wire array, realizes the photodetection demand only reaching at least three kinds of colors with a kind of detecting material.In the structure shown here, vertical silicon nanowire array provides a kind of large-scale three-dimensional structure, mature preparation process.Amorphous silicon as depositing operation the simple and convenient and semi-conducting material of cheapness photodetection and photoelectricity integrated in be widely used.By wrapping up laminate PIN structure around nano-wire array, because the three-dimensional radial junction structure being support with nano wire or nano-pillar is to the physical characteristic of different-waveband incident light in chamber Mode Coupling and model selection, first the incident light of short-wave band can be absorbed the photogenerated current of a generation outer PIN structural by outer field intrinsic amorphous silicon; The incident light of long-wave band more easily can be coupled into internal layer closer to the intrinsic amorphous silicon layer of nano-wire array and produce the photogenerated current of an internal layer PIN structural; And when the upper and lower two ends of this device of detection, overall induced current is the smaller value of ectonexine two PIN junction photogenerated currents, the absorption deriving from inside and outside two-layer intrinsic amorphous silicon is occured simultaneously, i.e. medium wave band region.Based on this principle, just achieve the detection only using a kind of detecting material to different-waveband incident light.In addition, because the thickness of this structure determines primarily of the length of nano wire, so substantially reduce thickness of detector and size, the use of institute's cladding material has been saved.In addition, because the operating voltage of these sensitive detection parts is determined, lower than 1V by the pressure size of opening of inside and outside knot.In sum, this kind of radial junction laminated construction illustrates larger advantage in novel three primary colors photodetection.
Four, accompanying drawing explanation
Fig. 1 is schematic three dimensional views and the cutaway view of radial junction laminated construction in the present invention.
Five, embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing 1, the present invention is described in more detail.In figure, A, B, C are electrode, have laminate PIN structure.
1) thickness is adopted to be about the common glass sheet of 1mm as substrate;
2) adopt Conventional cleaning method substrate surface, after cleaning, Al-Doped ZnO (AZO) film of sputtering one deck about 1 is as hearth electrode;
3) at the Sn film of substrate surface evaporation one deck 1 ~ 2nm as catalyst;
4) in pecvd 320, power 10W, hydrogen treat 5 minutes under 30Pa, forms the Sn particle of diameter about 20 ~ 40nm size; Be warmed up to 520 times and pass into silane and borine, growth diameter about 40nm under power 20W, the P-type silicon nano-wire array of length about 1.
5) deposit the intrinsic hydrogenated amorphous silicon of about 50nm in pecvd under 200,20W, 30Pa successively and pass into the PIN structural that N-type amorphous silicon that phosphine deposits about 10nm forms internal layer; And then sputter the thick ITO of the about 50nm of one deck as central, clear electrode with magnetron sputtering;
6) and then in pecvd 200, the N-type amorphous silicon (passing into phosphine doping) depositing the P-type non-crystalline silicon (passing into borane doping) of about 10nm, the intrinsic hydrogenated amorphous silicon of about 30nm and about 10nm under 20W, 30Pa successively forms outer field PIN structural; Then the ito thin film of the about 50nm of one deck is sputtered as top electrode with magnetron sputtering again.
7) finally use shadow mask evaporation Ag as grid line again.
This kind of radial junction laminated construction make use of the chamber pattern effects of light dexterously, controls only to utilize a kind of detecting material of energy gap to achieve the photodetection of three kinds of colors by the entirety of structure.In fact, we by the thickness of adjustment two intrinsic amorphous silicon layer, can make the absorption difference of inside and outside PIN junction more obviously thus obtain higher detection resolution.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. for a radial junction laminated construction for three primary colors photodetection, it is characterized in that: the amorphous silicon covering the different doping type of growth multilayer at vertical surface of silicon nanowires, forms two-layer PIN structural from inside to outside; And between double-layer structure deposit one deck ITO nesa coating to detect inside and outside two-layer photodetection response current; Based on the cavity modes coupled characteristic of the radial junction structure obtained, the intrinsic amorphous silicon of outer PIN structural has as the incident light of absorbed layer to short-wave band (partially blue) and responds more by force; Internal layer PIN structural the light of intrinsic amorphous silicon to long-wave band (partially red) have and respond more by force; When inside and outside two-layer series connection, photoresponse wave band is both common factor part, realizes only detecting respectively trichromatic in visible light wave range with a kind of detecting material; What utilize is that two-layer p-i-n junction structure is to the difference in response of different-waveband.
2. the radial junction laminated construction according to claim, is characterized in that: the described amorphous silicon for photosensitive semi-conducting material is replaced by polysilicon, nanocrystal silicon or amorphous germanium; It is any one semi-conducting material that can produce photo-generated carrier in target acquisition wave band.
3. the radial junction laminated construction according to claim, is characterized in that: described vertical silicon nanowires is that the vertical silicon nanowires of P type doping forms three-dimensional rack, and the amorphous silicon of the different doping type of coated multilayer forms laminate PIN structure; The pattern of nano-bracket can be nano wire, the combination of one or more in nano-pillar or nano pyramid structure.
4. radial junction laminated construction according to claim 3, is characterized in that: substrate uses heavily doped silicon chip, common glass sheet, a series of inexpensive substrate such as quartz plate or stainless steel metal sheet.
5. radial junction laminated construction according to claim 3, is characterized in that: the pattern of described nano-bracket is nano wire, nano-pillar, the combination of one or more in nanometer rods or nano pyramid structure.
6. for the preparation method of the radial junction laminated construction of three primary colors photodetection, it is characterized in that the described nanowire array structure for forming radial junction lamination framework is grown by induction mode from bottom to top to form, or using top-down etching mode to form nano-wire array, etching mode comprises solwution method wet etching or RIE dry etching.
7. preparation method according to claim 6, is characterized in that in the method that described induction mode grows, and the metal of induction Silicon nanowire growth can be the custom catalystses such as Sn, In, Au, Fe, Ni, Ga, Al.
8. preparation method according to claim 6, it is characterized in that nanowire array structure is grown to nano thread structure and film preparation by induction mode from bottom to top, adopt PCVD (PECVD), low pressure gas phase deposition (LPCVD), chemical vapor deposition (CVD), laser ablation deposition (LAD), thermal evaporation, electron beam evaporation (EBE), magnetron sputtering, sol-gel process etc.
9. preparation method according to claim 6, is characterized in that described is pass into impurity gas PH in growth course or film deposition process as the silicon nanowires of three-dimension-framework and the doping techniques of outer membrane
3or B
2h
6thus realize N-type or the doping of P type; The methods such as diffusion or ion implantation are utilized to obtain the film of different doping type thus obtain laminate PIN structure; Described nano wire and film preparation adopt PCVD (PECVD), low pressure gas phase deposition (LPCVD), chemical vapor deposition (CVD), laser ablation deposition (LAD), electron beam evaporation (EBE) or magnetron sputtering, sol-gel process; The doping way of described plural layers can be pass into PH in deposition process
3or B
2h
6deng doping source of the gas, or the modes such as diffusion or ion implantation after depositing, are utilized to realize doping growth N-type amorphous silicon or P-type non-crystalline silicon respectively.
10., according to the preparation method one of claim 6-9 Suo Shu, it is characterized in that step comprises:
1) thickness is adopted to be that the common glass sheet of 0.2 ~ 0.5mm or heavily doped silicon chip are as substrate;
2) adopt Conventional cleaning method substrate surface, if glass substrate, after cleaning, Al-Doped ZnO (AZO) film of sputtering one deck is as hearth electrode;
3) at the Sn of substrate surface evaporation one deck 1 ~ 2nm as catalyst;
4) hydrogen plasma process thus form the Sn particle of about 20 ~ 40nm in pecvd; Heat up with the growth of VLS method; Silane and borine growth diameter about 40nm is passed into, the P-type silicon nano-wire array of length 1 microns at 520 DEG C;
5) the N-type amorphous silicon of the intrinsic hydrogenated amorphous silicon and 10nm that deposit about 50nm in pecvd at 200 DEG C successively forms the PIN structural of internal layer; And then sputter the thick ITO of the about 50nm of one deck as central, clear electrode with magnetron sputtering;
6) the N-type amorphous silicon of the intrinsic hydrogenated amorphous silicon and about 10nm that and then in pecvd deposit P-type non-crystalline silicon, the about 30nm of about 10nm successively at 200 DEG C forms outer field PIN structural; Then the ito thin film of the about 50nm of one deck is sputtered as top electrode with magnetron sputtering again;
7) finally use shadow mask evaporation Ag as grid line again.
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| CN105629564A (en) * | 2016-03-29 | 2016-06-01 | 电子科技大学 | Photovoltaic reflective liquid-crystal spatial light modulator |
| CN108389937A (en) * | 2018-02-02 | 2018-08-10 | 南京大学 | A kind of preparation method based on three-dimensional radial junction nanostructure high power quality than flexible solar battery |
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