CN104900668A - Light guide array for an image sensor - Google Patents
Light guide array for an image sensor Download PDFInfo
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- CN104900668A CN104900668A CN201510253296.2A CN201510253296A CN104900668A CN 104900668 A CN104900668 A CN 104900668A CN 201510253296 A CN201510253296 A CN 201510253296A CN 104900668 A CN104900668 A CN 104900668A
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Abstract
An image sensor comprises a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The image sensor includes a cascaded light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the cascaded light guide has an air interface. The air interface improves the internal reflection of the cascaded light guide. The cascaded light guide may include a self-aligned color filter having air-gaps between adjacent color filters. These characteristics of the light guide eliminate the need for a microlens. Additionally, an anti-reflection stack is interposed between the substrate and the light guide to reduce backward reflection from the image sensor. Two pixels of having different color filters may have a difference in the thickness of an anti-reflection film within the anti-reflection stack.
Description
The divisional application that the application is application number is 201210245902.2, the applying date is on December 22nd, 2008, denomination of invention is the application for a patent for invention of " optical fiber array for imageing sensor ".Application number is the divisional application that application for a patent for invention be application number is 200880123359.0, the applying date is on December 22nd, 2008, denomination of invention is the international application for a patent for invention of PCT of " optical fiber array for imageing sensor " of 201210245902.2.
The cross reference of related application
Subject application advocates No. 61/069,344, the application case applied on March 14th, 2008; And the priority of No. 12/218,749, the application case of application on July 16th, 2008.
Technical field
Main contents of the present invention relate generally to the structure and method for the manufacture of solid state image sensor.
Background technology
Photographic equipment (such as digital camera and digital video camera-recorder) can contain electronic image sensor, and they can be caught and get light to be processed into static state or video image.Electronic image sensor is usually caught containing millions of light and is got assembly, such as optical diode.
Solid state image sensor can be charge coupled device (CCD) type or complementary metal oxide semiconductors (CMOS) (CMOS) type.In the imageing sensor of arbitrary type, optical sensor can be formed in the substrate and arrange with two-dimensional array.Imageing sensor contains millions of pixels usually, in order to provide high-definition picture.
Shown in Figure 1A is the profile of prior art solid state image sensor 1, and in CMOS type transducer, show multiple neighbor in figure, it is exposed in United States Patent (USP) case 7,119, No. 319.Each pixel has a photoelectric conversion unit 2.Each converting unit 2 is positioned at transmission electrode 3 adjacent place, and it can by transferring charge to floating diffusion unit (not shown).This structure comprises the many electric wires 4 be embedded in insulating barrier 5.This transducer comprises the planarization layer 6 be positioned at below colored filter 8 usually, in order to compensate the top surface out-of-flatness caused because of this isoelectric line 4, because flat surfaces is carved the conventional color filter constituted mode that carries out quite important concerning excuse me.Second planarization layer 10 is arranged on above this colored filter 8, in order to provide flat surfaces to form lenticule 9.Planarization layer 6 and 10 adds that the gross thickness of colored filter 8 is about 2.0um.
Photoconduction 7 is integrated in this transducer, to be directed to by light in these converting units 2.These photoconductions 7 are made up of the material of refractive index higher than the silicon nitride of insulating barrier 5.Each photoconduction 7 all has the entrance also wider than the region on these converting unit 2 sides.Transducer 1 also can have colored filter 8 and lenticule 9.
Lenticule 9 focuses light on photoelectric conversion unit 2.As shown in fig. 1b, due to the relation of optical diffraction, lenticule 9 can cause diffraction light, is transmitted to neighbouring photoelectric conversion unit 2 and produces optical crosstalk (crosstalk) and light loss.When there being planarization layer above or below colored filter, this lenticule can be allowed to be positioned at comparatively away from this photoconduction place, and the quantity of crosstalk just can increase.By the sidewall by planarization layer (above or below colored filter) or colored filter, light can be crosstalked in contiguous pixel.Metallic shield sometimes can be integrated in these pixels, in order to stop Crosstalk.In addition, the alignment error between lenticule, colored filter and photoconduction also can cause crosstalk.Although lenticular formation, size and shape can be changed to reduce crosstalk.But, it must increase the extra cost of accurate lenticule formation process, and crosstalk but still cannot be eliminated.
Retroeflection from the imageing sensor at substrate interface place is another problem causing light-receiving to lose.As shown in Figure 1A, photoconduction directly can contact with silicon.The non-desired retroeflection away from this transducer may be caused in this interface.Conventional anti-reflection structure for imageing sensor is included in the direct oxide that inserts above this silicon substrate and adds nitride bi-layer membrane stack (oxide-plus-nitride dual-layer film stack) or have the oxynitride layer of different nitrogen oxygen ratio, but only can reduce the reflection between this silicon substrate and high oxide insulator.When this interface be silicon substrate and nitride photoconduction time, this mode is just inapplicable.
Summary of the invention
A kind of image sensor pixel, it comprises one to be positioned at this substrate proximity insulator by the photoelectric conversion unit and of a substrate supports.This pixel can have a tandem photoconduction, and wherein a part for this tandem photoconduction is positioned at this insulator, and another part just extends on the body.This tandem photoconduction can comprise an auto-alignment colored filter.This pixel can have primary antibodie reflective stack between this substrate and this tandem photoconduction.
Accompanying drawing explanation
Figure 1A is the schematic diagram of two image sensor pixels of display prior art;
Figure 1B is the schematic diagram of the optical crosstalk between the neighbor of display prior art;
Fig. 2 is the schematic diagram of two pixels of display one embodiment of the invention;
Fig. 3 A is the schematic diagram of the light that display is advanced along the gap between two colored filters;
Fig. 3 B is light to be directed to these colored filters by display again schematic diagram from this gap location;
Fig. 3 C is the graph of a relation of luminous power relative to the distance in this gap;
The graph of a relation of gap power loss relative to gap width at Fig. 3 D to be light degree of depth in gap of three kinds of different colours be 0.6um and 1.0um place;
The graph of a relation of Fig. 3 E to be maximal clearance power loss relative to the degree of depth be gap width at 1.0um place;
The maximal clearance power loss table of Fig. 3 F to be the degree of depth be different gap width at 1.0um place;
Fig. 3 G is to represent the form of the interval area of different gap width and different pixels pitch with elemental area percentage;
Fig. 3 H is the form that the pixel power of different gap width and different pixels pitch is lost;
Fig. 3 I is the graph of a relation of pixel power loss relative to pixel pitch of different gap width;
Fig. 4 A to L is for display is in order to the schematic diagram of the process of the pixel shown in shop drawings 2;
Fig. 5 is the schematic diagram of the ray path in the pixel of display Fig. 2;
Fig. 6 A is the schematic diagram of the pixel of the corner of this array of display;
Fig. 6 B is the schematic diagram of the opticpath in the pixel of display Fig. 6 A;
Fig. 7 is the schematic top plan view of four pixels in array of display;
Fig. 8 is an alternate embodiment of sensor pixel, has ray path in figure;
Fig. 9 A to M is for display is in order to the schematic diagram of the process of the pixel shown in shop drawings 8;
Figure 10 A to H is that display is in order to expose the schematic diagram of the process of pad;
Figure 11 is the stacking schematic diagram of antireflection in display transducer;
Figure 12 A to E is the schematic diagram of display in order to form the stacking alternative Process of antireflection in this transducer;
Figure 13 A is the graph of a relation of the stacking transmission coefficient of antireflection relative to optical wavelength;
Figure 13 B is the graph of a relation of the stacking transmission coefficient of this antireflection relative to optical wavelength;
Figure 13 C is the graph of a relation of the stacking transmission coefficient of this antireflection relative to optical wavelength;
Figure 14 A to G is the schematic diagram in order to the stacking alternative Process of formation two antireflections in this transducer;
Figure 15 A is the graph of a relation of the stacking transmission coefficient of the first antireflection on Figure 14 G lefthand portion relative to optical wavelength;
Figure 15 B is the graph of a relation of the stacking transmission coefficient of the second antireflection on Figure 14 G right hand part relative to optical wavelength.
Embodiment
Disclose a kind of image sensor pixel herein, it comprises one to be positioned at this substrate proximity insulator by the photoelectric conversion unit and of a substrate supports.This pixel comprises one and is positioned at an opening of this insulator and the photoconduction of side's extension on the body, makes a part for this photoconduction have an Air Interface.This Air Interface improves the internal reflection of this photoconduction.In addition, being used for the technique of this photoconduction of construction and an adjacent color filter can optimize the upper aperture of this photoconduction and reduce crosstalk.The preceding feature of this photoconduction does not need to use lenticule.In addition, with the below construction primary antibodie reflective stack of this photoconduction above this photoelectric conversion unit, in order to reduce the light loss caused via the retroeflection from this imageing sensor.By revising the thickness of the stacking interior skim of this antireflection to optimize individually the pixel of two different colours for antireflection.
This pixel can comprise two photoconductions, and wherein one is positioned at above another one.First photoconduction is positioned at the first opening of the insulator at this substrate proximity place.Second photoconduction is positioned at the second opening of a support membrane, and this support membrane is finally removed during the manufacture of this pixel.One colored filter to be arranged in identical opening and thus can this second photoconduction of auto-alignment.This second photoconduction can depart from this first photoconduction at the outer corner of this pel array, gets with relative to the light of vertical axis for non-zero angle incidence to catch.
Between adjacent color filter, a gap produces by the support membrane material removing this filter adjacent place.The refractive index of air is lower than this support membrane and the internal reflection that can strengthen in this colored filter and this photoconduction.In addition, this gap is configured in order to improving and be provided to the quantity of the light of this transducer in the light be incident on this gap " bending " to this colored filter.
The reflection of this silicon-photoconduction (silicon-light-guide) interface to form nitride film and the first oxidation film and to reduce below this first photoconduction.Second oxidation film can additionally be inserted in below this nitride film, in order to broadening effective antireflecting light frequency range.This first oxide can be deposited in the groove etched before this light-guide material of applying.In alternative embodiments, form all anti-reflective films before etched recesses, extra photoconduction etch stop film then can cover these anti-reflective films, in order to protect them, destroys in order to avoid be subject to this groove etching agent.
With reference to graphic, especially Fig. 2,4A to L, 5 and 6A to B, figure shown in be the embodiment of two neighbors in imageing sensor 100.Each pixel comprises a photoelectric conversion unit 102, and it can convert light energy to electric charge.In the 4T pixel of routine, electrode 104 can be transmission electrode, in order to by these transferring charge to be separated sense node (not shown).Or in the 3T pixel of routine, electrode 104 can be reset electrode, in order to this photoelectric conversion unit 102 that resets.These electrodes 104 are formed on substrate 106 with converting unit 102.Transducer 100 also comprises the electric wire 108 be embedded in insulating barrier 110.
Each pixel all has one first photoconduction 116.First photoconduction 116 is made up of the refractive material of refractive index higher than insulating barrier 110.As shown in Figure 4 B, each first photoconduction 116 can have the sidewall 118 relative to vertical axis angle [alpha].Angle [alpha] is chosen as and is less than 90-asin (n
insulating layer/ n
light guide), be preferably 0, make to have complete internal reflection in this photoconduction, wherein, n
insulating layerwith n
light guidebe respectively the refractive index of insulating layer material and light-guide material.Light can be reflexed to converting unit 102 from the second photoconduction 130 in inside by photoconduction 116.
Second photoconduction 130 to be positioned at above the first photoconduction 116 and can be made up of the material identical with the first photoconduction 116.The top of the second photoconduction 130 is wider than the bottom of this second photoconduction 130 with this first photoconduction 116 joint.Therefore, in this bottom end, the gap (being hereinafter called in " the second gap ") between the second adjacent photoconduction 130 grade is greater than the gap of top end, and can be greater than the gap 422 between colored filter 114B, 114G above the second photoconduction 130.These second photoconductions 130 can lateral run-out first photoconduction 116 and/or converting unit 102, and as shown in FIG, wherein, the center line C2 of the second photoconduction 130 departs from the center line C1 of the first photoconduction 116 or photoelectric conversion unit 102.This departs from and can change according to the location of pixels in array.For example, being positioned at departing from of the pixel at the outside place of this array may be larger.This departs from and can be the horizontal direction identical with incident light, to optimize the reception of this first photoconduction.Concerning with the incident light arrived at for non-zero angle relative to vertical axis, depart from the second photoconduction 130 and more light can be allowed to be delivered to the first photoconduction 116.In actual effect, the second photoconduction 130 and the first photoconduction 116 can be formed in the photoconduction that different pixels place has different vertical section shape jointly.This shape can be optimised according to the angle of incident light at each pixel place.
Shown in Fig. 5 and 6B is the ray of the pixel of following the trail of the central authorities of array and the corner of this array respectively.In Figure 5, incident ray vertically enters.Second photoconduction 130 put in the first photoconduction 116 place.Light a and b can reflect once in the second photoconduction 130, then can enter the first photoconduction 116, reflect once (ray a) or twice (ray b), and then can enter converting unit 102.In fig. 6b, the second photoconduction 130 is offset to the right, away from central authorities' (its on the left side) of this array.Can reflect at the right side wall of the second photoconduction 130 relative to the light c of the angle of vertical axis up to 25 degree from the left side, irradiate and through its lower left sidewall, enter the first photoconduction 116, and finally can arrive at converting unit 102.This departs from can allow this first photoconduction 116 again catch to get the light leaving this second photoconduction 130 lower left sidewall.Whenever leap photoconduction sidewall, no matter leave the second photoconduction or enter the first photoconduction, reflecting each time of light c all can allow refracted rays become less relative to the angle of this vertical axis, strengthens the conducting effect towards this photoelectric conversion unit.Therefore, utilize the first photoconduction 116 and the second photoconduction 130 vertical-sectional shape of this photoconduction can be allowed to change along with pixel to set up photoconduction, in order to optimize effect light being sent to photoelectric conversion unit 102.
Two independent photoconductions 116,130 are utilized to be reduce the etch depth of each photoconduction 116,130 to set up the Section 2 advantage of photoconduction.As a result, sidewall oblique angle controls just can reach higher accuracy.It also can allow the deposition of light-guide material comparatively can not produce undesired keyhole (keyholes), these keyholes often appear at by thin film deposition to deep recess time, it can cause light can from this photoconduction scattering when meeting these keyholes.
Colored filter 114B, 114G are positioned at the top of the second photoconduction 130.The remainder of the second photoconduction is greater than in the up rightness of the sidewall upper section of these colored filter places (with vicinity).
The width in the first gap 422 between these colored filters is 0.45um or less, and the degree of depth is 0.6um or larger.The gap with above-mentioned size restrictions can allow the light in this gap turn to and enters in these colored filters and finally can arrive at transducer.Therefore what this gap of reason was caused the light loss percentage (being hereinafter called " pixel loss ") incided in this pixel can reduce widely.
Light on gap between two translucent areas being incident on high index can redirect to one of them region or another region when this gap is enough narrow.In particular, the light be incident on the gap between two colored filters can redirect to colored filter or another colored filter for enough hour in this gap width.Shown in Fig. 3 A is the down suction of filling low refractive index dielectric (for example, air) between two color filter region.Enter this gap and relatively can turn near the wherein incident ray of a sidewall and enter this sidewall, remaining incident light then can turn to and enter another sidewall.Shown in Fig. 3 B is the multiple wavefront of a wavelength of being separated by.The pace of wavefront in high index medium is comparatively slow, and in this example, the refractive index n of colored filter is about 1.6.Therefore, in this gap, the separation distance (supposing to be filled with air) between wavefront is 1.6 times of the separation distance of this colored filter, thus the interface of wavefront between this colored filter and gap can be caused to bend and cause turn light rays to enter colored filter.Fig. 3 C is divided by the graph of a relation of incident optical power P (0) relative to distance z along light conducting power P (z) of the vertical axis z in gap.As shown in Figure 3 C, luminous power all can decline when going deep in this gap in different gap widths, decline faster in the little gap width to being about about wavelength, and concerning 0.4 times of wavelength or less gap width, at the depth of 1.5 times of wavelength for be tending towards substantially can be uncared-for.From Fig. 3 C, degree of depth the best is at least 1 times of the most elder of interested wavelength (in the embodiment of this visible light image sensor, it is 650nm).At this depth, to be incident on this gap and luminous power percentage (being called below " gap loss ") in being lost in more underlying space can be less than 15%.Therefore, the thickness of colored filter is required to be at least 1 times of this wavelength, to filter the incident light entering this gap, avoids the light of filtered by photoconduction 130,116 and finally enters converting unit 102.If this gap-fill the transparent medium (refractive index n beyond air
gap>1.0), then can infer that the necessary constriction in this gap is to 0.45um/n
gapor less, because with wavelength be that the coverage of benchmark keeps identical but absolute distance then reduces 1/n
gap.
With reference to figure 3C, be the ruddiness of 650nm to air medium wavelength, and width be 0.6 times of air medium wavelength (namely, gap 0.39um), at degree of depth 0.65um place (namely, 1.0 times of air medium wavelength), gap power flow decays to 0.15 (15%).Decay can reach maximum near the degree of depth of 1um.Wavelength is shorter, along with the decay of the degree of depth can be more precipitous.
Shown in Fig. 3 D is the graph of a relation of gap loss relative to gap width W locating three kinds of colors (blueness of 450nm wavelength, the green of 550nm wavelength, and the redness of 650nm wavelength) at degree of depth 0.6um and 1.0um respectively.Concerning the degree of depth of 1.0um, the maximal clearance loss of the highest gap loss in 3 colors and 0.2um to 0.5um gap width is drawn in fig. 3e.It is the relation list of gap loss and gap width in Fig. 3 F.For the interval area that represents with elemental area percentage is relative to the list of pixel pitch and gap width in Fig. 3 G.Each project (percentage interval area) in the form of Fig. 3 G is multiplied by the pixel loss that corresponding list of items (namely, gap loss) just can produce tabular in Fig. 3 H.Fig. 3 I draw be under different gap width (scope is from 0.2um to 0.5um) pixel loss relative to the graph of a relation of pixel pitch.
Fig. 3 I demonstrates the color filter thickness of 1.0um and the pixel pitch between 1.8um and 2.8um (the image sensor size scope of compact camera and camera phone), and gap width remains on below 0.45um can cause the pixel loss being less than 8%.If be less than 3%, then need the gap width of below 0.35um; If be less than 1.5%, then gap width will at below 0.3um; And if be less than 0.5%, then gap width will at below 0.25um.Fig. 3 I also demonstrates, and under identical gap width prerequisite, the pixel loss of larger pixel is less.Therefore, concerning the pixel being greater than 5um, above-mentioned policy can cause the pixel loss being reduced by least half.
Refer again to Fig. 2 and 5, can know and see, the first gap 422 borrows internal reflection to prevent from passing to from the colored filter of a wherein pixel crosstalk of neighbor.Therefore, the function of colored filter 114B, 114G each is as same photoconduction.Be cascaded along the colored filter of ray a, the second photoconduction and the first photoconduction in Fig. 5, get incident light in order to catch and be delivered to photoelectric conversion unit 102, will lose and crosstalk minimization simultaneously.And between colored filter, using metallic walls or optically absorptive wall different to the prior art reducing crosstalk, it can not lose the light being radiated at these wall portion, and the first gap 422 can uncared-for gap loss by light being redirect to nearest colored filter reaches.And because not being similar to the intercropping bridge joint of planarization layer in adjacent light guides of prior art (see Figure 1B) below these colored filters, so also relevant crosstalk can be eliminated.
Air Interface can extend to above diaphragm 410 from this colored filter sidewall along the second photoconduction sidewall, thus produces the second gap 424.Air Interface between second gap 424 and the second photoconduction 130 can strengthen the internal reflection of the second photoconduction 130.
Above insulating barrier 110, a diaphragm 410 can be formed with silicon nitride, enter in silicon to prevent alkali metal ion.Alkali metal ion (usually can find in colorized optical filtering sheet material) can cause the instability of MOS transistor.Diaphragm 410 also can isolate moisture.Diaphragm 410 can by thickness between 10,000 dust and 4, the silicon nitride (Si between 000 dust
3n
4) make, be preferably 7,000 dust.If the first photoconduction 116 or the second photoconduction 130 are made up of silicon nitride, then the diaphragm 410 be made up of silicon nitride just can continue and crosses over and be positioned at above insulating barrier 110, to seal these transistor isolation alkali metal ion and moistures.If the first photoconduction 116 and the second photoconduction 130 are not made up of silicon nitride, then diaphragm 410 can cover the top surface of the first photoconduction 116 to provide similar sealing effectiveness, or, cover sidewall and the bottom of the first photoconduction 116.
First gap 422 and the second gap 424 jointly form the opening being connected to air above the top surface of this imageing sensor.Another kind of viewpoint there is continuous print Air Interface from this diaphragm 410 to the top surface of colored filter 114B, 114G.In particular, between the top surface 430 of these pixels, gap is had.This opening is had to there is the waste material that can remove during the manufacture of this imageing sensor and be formed during the formation in the first gap 422 and the second gap 424 during manufacture.If because certain reason uses plugging material to seal the first gap 422 below, then the refractive index of this plugging material should lower than this colored filter, make (i) have internal reflection in this colored filter, and the light that (ii) is incident in the first gap 422 can redirect to colored filter 114B, 114G.Similarly, if the second gap 424 filled by certain packing material, then the refractive index of this packing material will lower than the second photoconduction 130.
Colored filter 114 can be formed " tandem photoconduction " jointly with photoconduction 130 and 116, and it can use the complete internal reflection of the interface be connected with external agency (such as insulating barrier 110 and gap 422 and 424) by photoconduction to photoelectric conversion unit 102.Be different from prior art structure, the light entering colored filter can not cross the colored filter of next pixel, and only can be transmitted to the second photoconduction 130 downwards.This makes to go to neighbor to prevent light from the colored filter of pixel to the center focusing the light into this pixel region without the need for lenticule above it.Except reducing manufacturing cost, remove lenticular benefit and get rid of the aforementioned alignment error problem that may cause between the lenticule of crosstalk and colored filter in addition.
As previously noted, tandem photoconduction is better than between colored filter, use another advantage of the prior art of opaque wall portion material to be because the incident light dropped in the first gap 422 between colored filter 114B and 114G can redirect to arbitrary colored filter, therefore any light can not be lost, different with the prior art pixel in the opaque wall portion that light can be lost between these filters.
The advantage that this kind of colored filter constructive method is better than art methods is that colored filter sidewall is not defined by the photoresist and dye materials that form these colored filters.In prior art colored filter constructive method, the colored filter formed must produce vertical sidewall afterwards in development (developing).This necessary condition can limit the selection of photoresist and dye materials, because dyestuff cannot absorb the light making this photoresist photosensitive, otherwise the bottom of colored filter will receive less light, causes the bottom of colored filter can be narrower than its top.Colored filter constructive method of the present invention forms colored filter sidewall by the recess 210 be etched in support membrane 134 and has nothing to do with the accuracy of the characteristic sum photoetching of colorized optical filtering sheet material, thus produces more cheap technique.
Another advantage being better than prior art colored filter constructive method is that the separated distance controlling between all pixels obtains very consistent and low cost can reach very high accuracy.Herein, separated distance controls for the lateral etch during adding dry-etching in order to the live width (line-width) in the single lithography step of etching openings in support membrane, and both are all easy to control evenly and need not increase cost just can be very accurate.If these gaps produce by placing the colored filter of 3 different colours as prior art in the different lithography step in 3 roads, then be difficult to the consistency reaching gap width, lithography step can become very expensive, and side wall profile control can become severeer.
The advantage that the tandem photoconduction (being called below " auto-alignment tandem photoconduction ") forming colored filter 114 and photoconduction 130 in identical opening in support membrane 134 is better than prior art is: without any alignment error between colored filter 114 and photoconduction 130.The sidewall of the sidewall meeting auto-alignment photoconduction 130 of colored filter 114.
Fig. 4 A to L is the process of display in order to form this imageing sensor 100.This transducer can be processed into as shown in Figure 4 A like this, and namely these converting units 102 and gate electrode 104 are formed on silicon substrate 106 that electric wire 108 is embedded in insulating material 110.Insulator 110 can be made up of low-refraction (RI) material (such as (silicon dioxide) (RI=1.46)).Chemical mechanical milling tech (CMP) can be utilized to come the top of planarization insulator 110.
As shown in Figure 4 B, insulating material can be removed to form photoconduction opening 120.Opening 120 has the sloped sidewall of angle [alpha].Such as reactive ion etching (RIE) technique can be used to form these openings 120.Concerning using silica as insulating material, suitable etchant is the CF of flow-rate ratio 1:2
4+ CHF
3, it is carried in 125mTorr, the argon gas of 45 DEG C.By adjusting RF power with 13.56MHz to adjust this Sidewall angles between 300W and 800W.
Shown in Fig. 4 C is add light-guide material 122.For example, light-guide material 122 can be the silicon nitride of refractive index 2.0 (being greater than the refractive index (for example, silica RI=1.46) of insulating material 110).In addition, silicon nitride also provides diffusion barrier, stops H
2o and alkali metal ion.This light-guide material is added by such as plasma enhanced chemical vapor deposition (PECVD).
Can this light-guide material of ablation and leave thinner and more smooth diaphragm 410 to cover this insulator and to seal converting unit 102, gate electrode 104 and electric wire 108, in order to stop H2O and alkali metal ion during subsequent technique.Or; if this first light-guide material 122 is not silicon nitride; then can after this light-guide material 122 of etching be with this top surface of planarization; in the top silicon nitride film of light-guide material 122; to form diaphragm 410; it can seal converting unit 102, gate electrode 104 and electric wire 108, in order to stop H
2o and alkali metal ion.The thickness of this diaphragm 410 can between 10,000 dust and 4, between 000 dust, are preferably 7,000 dust.
As shown in fig.4d, support membrane 134 is formed in the top of this silicon nitride.Support membrane 134 can be the silica deposited by high-density plasma (HDP).
In Fig. 4 E, this support membrane is etched with formation opening.These openings can comprise the sidewall 136 of inclination angle beta.Angle beta is through selecting to make β <90-asin (1/n2
light guide), to have total internal reflection in the second photoconduction 130, wherein, n2
light guideit is the refractive index of the second light-guide material 130.The etch depth of each photoconduction can be reduced in conjunction with two photoconductions be separated.Therefore, than the oblique sidewall etch effect being easier to reach more high precision.Support membrane 134 and the second photoconduction 130 can be made up of the material identical with the first photoconduction 116 with insulating barrier 110 and identical technique respectively.
As shown in figure 4e, sidewall can have vertical component and sloping portion.This vertical component and sloping portion by changing etch chemistries or condition of plasma realizes during etch process.The etching mode of vertical component etching to be conducive to forming vertical sidewall 162, then can change over the mode being conducive to forming sloped sidewall through selecting.
Fig. 4 F shows adding of light-guide material.For example, this light-guide material can be the silicon nitride deposited by plasma enhanced chemical vapor deposition (PECVD).
Fig. 4 G shows each second photoconduction 130 and all has a recess 210.These recesses 210 are separated by supporting walls 212 (it is a part for support membrane 134).The formation of recess 210 is to expose wall portion 212 and to etch into photoconduction top surface further lower than between wall portion 212 top surface 0.6um to 1.2um by etching light-guide material.For by absorbed non-desired color (can not too thick and be less than 85% of max transmissive coefficient), as long as the final thickness being formed at the colored filter of each recess 210 is enough thick in provide enough low transmission coefficient (such as lower than 10%), then also can use the darker degree of depth.
As shown in fig. 4h, the Coloured film material 114B with a certain color dye can be applied in, to fill these recesses 210 and to extend above support membrane 134.In this example, this colored materials can contain blue dyes.Colorized optical filtering sheet material can be made up of negative photoresist, and it can form the polymer becoming after exposure and be insoluble in development of photoresist agent.Mask (not shown) can be placed on above material 114B, and it has opening in order to expose when remainder is by the region that still can stay during ablation.
Fig. 4 I shows the transducer after etching step.This technique can utilize the material of different colours (such as green or red) to repeat, in order to produce the colored filter of different pixels, as shown in Fig. 4 J.The colored materials finally applied can fill remaining recess 210, does not therefore need masking steps.In other words, exposure light (exposure light) can be applied in each place on this imageing sensor wafer, in order to expose each place of last colored filter film.During baking step, this last colored filter forms the film of overlapping all pixels (comprising the pixel of other color).Last colored filter in other pixel overlap the ablation technique down of the follow-up colored filter shown in Fig. 4 K during be removed.
With reference to figure 4G, these recesses 210 provide auto-alignment feature, in order to this colorized optical filtering sheet material of auto-alignment and the second photoconduction 130.These recesses 210 can wider than the mask open of correspondence.For given pixel pitch and desired second photoconduction opening reduce the thickness of this supporting walls 212, the pressure in plasma-reaction-chamber can be improved, in order to strengthen side direction (namely, waiting tropism) etching action (by improving ion scattering), so that this mask of incision.
As shown in fig. 4k, colored filter 114B, 114G are exposed supporting walls 212 by etching down, and it is a part for support membrane 134.Then can remove a part for this support membrane 134 as shown in Fig. 4 L, make, for these colored filters 114B, 114G, have one air/material interface.Another part of this support membrane 134 can be removed as shown in Fig. 4 L, make, for the second photoconduction 130, have one air/material interface, more to contribute to internal reflection (producing total internal reflection by allowing the light of the normal at this interface closer).First gap 422 has enough little width, 0.45um or less, and the light making to be radiated at incident ruddiness in the first gap 422 and more small wavelength redirect to colored filter 114B or 114G, thus can improve light-receiving effect.Light can carry out internal reflection along colored filter 114B, 114G and photoconduction 130 and 116.The refractive index of colored filter 114B, 114G is higher than air, and therefore colored filter 114B, 114G provides internal reflection.Similarly, the second photoconduction 130 has the Air Interface of the internal reflection character improving photoconduction.If support membrane 134 is not completely removed, as long as the refractive index of this support membrane (for example, silica, 1.46) lower than light-guide material (for example, silicon nitride, 2.0), then the interface between the second photoconduction 130 and support membrane 134 has good internal reflection.Similarly, the interface between the first photoconduction 116 and the first dielectric film 110 also has good internal reflection.Fig. 7 is the vertical view of four pixels 200 of pel array.Concerning the embodiment comprising the first photoconduction and the second photoconduction, region B can be the region of the second photoconduction top surface, and region C then represents the region of the first photoconduction basal surface.Region A deducts the region that region B then can be the first gap 422 between colored filter.
Shown in Fig. 8 is alternate embodiment, and it uses same mask to etch the second and first photoconduction and utilizes both light-guide material fills in a step after this support membrane 134 of formation.The process for the manufacture of this alternate embodiment is shown in Fig. 9 A to M.This process is similar to the process of showing in Fig. 4 A to L; opening except the first photoconduction is formed after the opening of the second photoconduction, as shown in fig. 9f, wherein without any need for extra mask; because diaphragm 410 can serve as hard mask, in order to stop etchant with the support membrane 134 of top.Two photoconductions are all filled in the same steps shown in Fig. 9 G.
Figure 10 A to H is the process of the pad 214 in order to exposure image transducer.As shown in Figure 10 A to B, in the first insulating material 110 covering pad 214, form opening 216.As shown in Figure 10 C to D, apply the first light-guide material 116 and remove most material 116, leaving thinner layer, in order to sealing the first insulating material 110 below.As shown in Figure 10 E to F, apply support membrane material 134 and form corresponding opening 218 wherein.As shown in Figure 10 G, apply the second light-guide material 130.As shown in Figure 10 H, with forming the opening 220 exposing pad 214 without mask etching step.This etchant preferably has the fast characteristic crossing insulating material 110 and 134 (for example, silica) and colored filter 114 (photoresist) of the speed corroding light-guide material 116 and 130 (for example, silicon nitride).At CH
3f/O
2in comparison colored filter or silica can carry out large 5 to 10 times of dry-etching to the etch-rate that silicon nitride carries out dry-etching.
Figure 11 shows the embodiment that antireflection (AR) is stacking, its 3rd AR film 232 comprising top AR film the 236, the 2nd AR film 234 and cover converting unit 102.This antireflection is stacking can improve light from the first photoconduction 116 to the transmission of these converting units 102.Parts during AR is stacking can constituting layer 230 jointly, and it also can cover substrate 106, converting unit 102 and electrode 104, to protect these assemblies, prevents chemical pollutant and moisture.For example; 2nd AR film 234 to can be in CMOS wafer manufacture conventional contact etch and to stop nitride thing film; it is for stoping oxide etching of contact hole to prevent the over etching of polysilicon contact (its contact hole usually can more shallow than source/drain polar contact 2,000 dust).3rd AR film 232 can be silica.This silicon oxide film can be the gate insulating film below gate electrode 104; Or in conventional deep-submicron CMOS process between this gate electrode and Inter gap wall (not shown), along the side of gate electrode 104 to Inter gap wall liner material oxide (the spacer liner oxide) film of downward-extension; The silicide deposited before contact silication stops (silicide-blocking) oxidation film, in order to stop contact silication; Or aforesaid combination; Or the code-pattern oxidation film deposited after silicide barrier oxide etching (all oxides in the region that its meeting ablation is consistent with the bottom of photoconduction 116).Use existing silicon nitride contact etch stopper film can save cost as the part that AR is stacking.Identical contact etch stopper film also can be used for stoping the opening in etching insulator 110 in the manufacture of this photoconduction.Finally, before filling the opening in insulator 110 with light-guide material, first top AR film 236 is formed in the openings.
The refractive index of top AR film 236 is lower than photoconduction 116.The refractive index of the 2nd AR film 234 is higher than top AR film 236.The refractive index of the 3rd AR film 232 is lower than the 2nd AR film 234.
Top AR film 236 can be silica or silicon oxynitride, and its refractive index is about 1.46, and thickness, between 750 dusts and 2000 dusts, is preferably 800 dusts.2nd AR film 234 can be silicon nitride (Si
3n
4), its refractive index is about 2.0, and thickness, between 300 dusts and 900 dusts, is preferably 500 dusts.3rd AR film 232 can be silica or silicon oxynitride (SiOxNy, wherein, 0<x<2 and 0<y<4/3), its refractive index is about 1.46, thickness, between 25 dusts and 170 dusts, is preferably 75 dusts.3rd AR film 232 can to comprise below Fig. 2 gate electrode 104 and gate oxide above substrate 106, as U.S. Patent Application No. the 61/009th, shown in No. 454 Fig. 3.3rd AR film 232 can comprise the grid wadding oxide shown in accomplice Fig. 3 further.Or, at silicide, 3rd AR film 232 is by stopping that etching removes U.S. patent application case the 61/009th, after silicide barrier oxide 64 shown in Fig. 2 of No. 454, grid wadding oxide 55 and gate oxide 54 (it uses the silicide with the mask open consistent with the bottom of photoconduction 116 to stop etching mask), code-pattern silicon oxide deposition (blanket silicon oxide deposition) is formed in each place of wafer.
Anti-reflection structure shown in Figure 11 is by formation the 3rd AR film 232 and the 2nd AR film 234 are made respectively over the substrate.Then insulator 110 can be formed on the 2nd AR film 234.Silicon nitride film is deposited on this first insulator 110 by PECVD, and the mode of its deposition can cover and the layer sealing this insulator and below, and in order to form thickness between 10,000 dust and 4, between 000 dust, is preferably the diaphragm 410 of 7,000 dust.For example, support membrane 134 is formed on diaphragm 410 by HDP silicon oxide deposition.
Shelter support membrane 134 and apply the first etchant to etch the opening in support membrane 134.The first etchant is selected to be have very high selectivity to Protective coatings.For example, if support membrane 134 comprises HDP silica and diaphragm 410 comprises silicon nitride, then the first etchant just can be CHF
3, its etching HDP silica can be faster than silicon nitride 5 times.Then, the second etchant is applied with eating thrown silicon nitride diaphragm 410.Second etchant can be CH
3f/O
2.Then, again apply the first etchant to comprise on the contact etch stopper film 234 of silicon nitride to etch the first insulator 110 and to stop at.Contact etch stop layer 234 serves as etchant stop-layer, in order to define the bottom of opening.Then form top AR film 236 in the openings by anisotropic deposition method (for example, PECVD or HDP silicon oxide deposition), its major sedimentary is to the bottom of opening but not sidewall.Any residual top AR membrane material that etchant extends with ablation in the sidewall of this opening can be applied, for example, use the first etchant to carry out dry-etching and allow wafer substrates keep an inclination angle and rotate around the axis being parallel to foreign ion bundle.Then in these openings, light-guide material is formed by such as silicon nitride PECVD.Colored filter can be formed in above this photoconduction, and a part of support membrane between adjacent color filter and the another part between adjacent light guides then can be etched with produces the structure shown in Fig. 5.
Figure 12 A to E shows the process in order to manufacture the stacking embodiment of another antireflection between photoconduction 116 and substrate 202.With reference to figure 12E, in this embodiment, photoconduction 116 and comprise the antireflection (AR) of top AR film the 236, the 2nd AR film 234 and the 3rd AR film 232 stacking between plug etch stop film 238.This photoconduction etch stop film 238 for be made up of the material identical with photoconduction 116, and can be silicon nitride, and its thickness, between 100 dusts and 300 dusts, is preferably 150 dusts.Forming the stacking advantage of this AR in the present embodiment is: the thickness that can control the 2nd AR film 234 more accurately, and its cost is that the stacking but not complexity of ONO stack of the oxidenitride oxide-Nitride Oxide of many one deposition steps and eating thrown contact hole opening (not shown) can slightly increase.Preceding embodiment uses the 2nd AR film 234 as photoconduction etch stop film and can lose segment thickness in last insulator groove etching over etching step.
As shown in Figure 12 A to B, applying the 3rd AR film 232 and the 2nd AR film 234 on substrate 106 then applies top AR film 236 on the 2nd AR film 234, then applies the photoconduction etch stop film 238 be made up of silicon nitride afterwards.As shown in figure 12 c, form insulating barrier 110 and be connected electric wire 108 with electric wire above AR film 232,234,236 and photoconduction etch stop film 238.Figure 12 D shows the opening be etched in insulator 110, and it stops at the top of photoconduction etch stop film 238.Figure 12 E shows this opening and is filled with light-guide material.
Figure 13 A is the graph of a relation of the stacking transmission coefficient of the antireflection of Figure 11 and Figure 12 E relative to optical wavelength, and top AR film 236 (oxide) nominal thickness is 800 dusts, is changed to +/-10%; And the 2nd AR film 234 (nitride) nominal thickness is 500 dusts; And the 3rd AR film 232 (oxide) thickness be 75 dusts.Transmission curve presents precipitous sagging in purple district (400nm to 450nm).The nominal thickness forming the stacking AR film 232,234,236 of AR is chosen as and the maximum of this transmission curve is arranged on non-green district (490nm to 560nm) in blue region (450nm to 490nm), and the decline any film thickness caused because of manufacturing tolerance being offset all can not cause transmission coefficient in purple district is understood much larger than in red color area (630nm to 700nm).
Figure 13 B is the graph of a relation of the stacking transmission coefficient of the antireflection of Figure 11 and Figure 12 E relative to optical wavelength, and the 2nd AR film (nitride) thickness of nominal is 500 dusts, is changed to +/-10%.
Figure 13 C is the graph of a relation of the stacking transmission coefficient of the antireflection of Figure 11 and Figure 12 E relative to optical wavelength, and the 3rd AR film 232 (nitride) nominal thickness is 75 dusts, is changed to +/-10%.
Shown in Figure 14 A to G is process in order to manufacture the stacking embodiment of another antireflection between photoconduction 116 and substrate 202, and in order to provide two different AR stacking at two different pixels places, it optimizes individually the region of different colours.3rd AR film 232 and the 2nd AR film 234 are located at above the photoelectric conversion unit 201 in Figure 14 A, are similar to the embodiment shown in Figure 12 A.In Figure 14 A, top AR film 236 deposits to the thickness of the thicker top AR film 236b shown in Figure 14 B.Then photo etched mask (not shown) can be applied, in order to produce mask open above the pixel using thinner top AR film 236a.Application etching step is to be thinned to the less thickness of top AR film 236a in Figure 14 B by the top AR film 236 below this mask open.Subsequent step shown in Figure 14 C to 14G is similar to Figure 12 B to E.Apply green tint colo(u)r filter 114G in the pixel with thinner top AR film 236a, blueness and red color filter sheet are then in the pixel with thicker top AR film 236b.
Figure 15 A is the graph of a relation of the stacking transmission coefficient of the antireflection of Figure 14 G relative to optical wavelength, and the nominal thickness of nominal thinner top AR film 236a is 0.12um, and the nominal thickness of the 2nd AR film 234 is 500 dusts, and the nominal thickness of the 3rd AR film 232 is 75 dusts.The kurtosis of this graph of a relation is about 99%, is at green area place, drops to about 93% of red area center lentamente.This graph of a relation demonstrates top AR film 236a can be used in red pixel and green pixel.
Figure 15 B is the graph of a relation of the stacking transmission coefficient of the antireflection of Figure 14 G relative to optical wavelength, and the nominal thickness of top AR film 236b is 0.20um, and the nominal thickness of the 2nd AR film 234 is 500 dusts, and the nominal thickness of the 3rd AR film 232 is 75 dusts.This graph of a relation kurtosis is in two regions of different colours, and namely, purple is with red.This graph of a relation demonstrates top AR film 236b can be used in blue pixel and red pixel.
Pel array can use thinner top AR film 236a only to use thicker top AR film 236b in blue and red pixel in green pixel.Or this pel array can use thinner top AR film 236a to use thicker top AR film 236b only in blue pixel in green and red pixel.
By producing the top AR film thickness that the 2nd different AR film thicknesses keeps identical simultaneously, can provide another embodiment, it provides two different AR stacking, the region of each stacking optimization different colours.It can determine two different-thickness, a kind of thickness of each color region.2nd AR film can first be deposited to comparatively heavy thickness.Then photo etched mask can be applied, to produce mask open above the imageing sensor using less 2nd AR film thickness.Etching step can be employed that the 2nd AR film below this mask open is thinned to less thickness.Subsequent step is similar to Figure 12 B to E.
Although illustrated in the accompanying drawings and shown specific one exemplary embodiment, but, will be appreciated that these embodiments are only explained and unrestricted the present invention, and the present invention is not limited to shown and described particular configuration and arrangement, revise because those skilled in the art can carry out various other.
Claims (10)
1. an image sensor pixel, it comprises:
One substrate;
One photoelectric conversion unit, it is by this substrate supports;
One diaphragm, it just extends over the substrate and crosses over this substrate; And
One tandem photoconduction, wherein a Part I of this tandem photoconduction Part II of this tandem photoconduction between this diaphragm and this substrate then extends above this diaphragm,
Two tandem photoconductions are wherein had at least to have different section profiles in two different pixels,
Wherein the median vertical line of Part I and the median vertical line of Part II depart from each other,
This departs from according to the location of pixels in array and changes, and the departure ratio being positioned at the pixel at the outside place of this array is larger.
2. pixel according to claim 1, wherein this departs from and makes the median vertical line of Part II compared with the median vertical line of Part I away from the central authorities of this array.
3. manufacture a method for an image sensor pixel, it comprises:
Transparent light guide below square one-tenth one over the substrate, this substrate supports one photoelectric conversion unit;
Below this, form a support membrane on transparent light guide, it has an opening; And
Transparent light guide form one in the opening of this support membrane above,
Wherein below this, the median vertical line of transparent light guide departs from the median vertical line of the opening of this support membrane.
4. method according to claim 3, wherein this median vertical line departing from the opening making this support membrane compared with the median vertical line of below transparent light guide away from the central authorities of pel array.
5. an image sensor pixel, it comprises:
One substrate;
One photoelectric conversion unit, it is by this substrate supports;
One photoconduction, it is coupled to this photoelectric conversion unit;
Anti-reflection member, it is in order to be reduced in the reflection between this photoconduction and this photoelectric conversion unit,
Wherein this anti-reflection member comprises the first anti-reflective film and the second anti-reflective film, the refractive index of refractive index lower than this second anti-reflective film of this first anti-reflective film and the refractive index of this photoconduction, and this first anti-reflective film is between this second anti-reflective film and this photoconduction.
6. pixel according to claim 5, wherein this anti-reflection member comprises the 3rd anti-reflective film, and its refractive index is lower than the refractive index of this second anti-reflective film, and it is between this first anti-reflective film and the 3rd anti-reflective film.
7. form a method for a part for an image sensor pixel, it comprises:
The first anti-reflective film is formed at a types of flexure of support one photoelectric conversion unit;
An insulator is formed above this first anti-reflective film;
Utilize the etchant of this first anti-reflective film of the fast mistake of this insulator of etching, in this insulator, etch an opening;
The second anti-reflective film is formed in this opening; And
Light-guide material is formed in this opening.
8. comprise an imageing sensor for a pel array, it comprises:
One substrate;
By multiple photoelectric conversion units of described substrate supports;
Multiple colored filter, its each be coupled with the one in transmission one light to described multiple photoelectric conversion unit,
Wherein, an air gap is had between a horizontal neighbor in one in described multiple colored filter and described multiple colored filter, described air gap contains air or a gas, and there is a width, described width is 0.45 micron or less, and the direction that described air gap yearns for described substrate from the side of colored filter extends.
9. form a method for an imageing sensor, it comprises:
Form multiple photoelectric conversion units of a substrate supports;
Form multiple colored filter, its each be coupled with the one in transmission one light to described multiple photoelectric conversion unit,
Wherein, have an air gap between the horizontal neighbor in the one in described multiple colored filter and described multiple colored filter, described air gap contains air or a gas, and has a width of 0.45 micron or less.
10. method according to claim 9, becomes multiple colored filter to be that multiple steps of the colored filter forming individually a kind of color combine.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6934408P | 2008-03-14 | 2008-03-14 | |
| US61/069,344 | 2008-03-14 | ||
| US12/218,749 | 2008-07-16 | ||
| US12/218,749 US7816641B2 (en) | 2007-12-28 | 2008-07-16 | Light guide array for an image sensor |
| CN200880123359.0A CN101971339B (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor |
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| CN200880123359.0A Division CN101971339B (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor |
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| JP2869280B2 (en) * | 1993-01-27 | 1999-03-10 | シャープ株式会社 | Solid-state imaging device and method of manufacturing the same |
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| US20050139750A1 (en) * | 2003-12-12 | 2005-06-30 | Canon Kabushiki Kaisha | Internal structure of image sensing element |
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| US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
| US20070052035A1 (en) * | 2005-08-23 | 2007-03-08 | Omnivision Technologies, Inc. | Method and apparatus for reducing optical crosstalk in CMOS image sensors |
| FR2894072A1 (en) * | 2005-11-30 | 2007-06-01 | St Microelectronics Sa | Integrated circuit, e.g. optical detector, has inner volumes having surfaces on side of photosensitive element and lateral surfaces, respectively, where one of former surfaces has area smaller than area of one of lateral surface |
| US7675080B2 (en) * | 2006-01-10 | 2010-03-09 | Aptina Imaging Corp. | Uniform color filter arrays in a moat |
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| JP2869280B2 (en) * | 1993-01-27 | 1999-03-10 | シャープ株式会社 | Solid-state imaging device and method of manufacturing the same |
| US20040227170A1 (en) * | 2003-02-27 | 2004-11-18 | Tongbi Jiang | Total internal reflection (TIR) CMOS imager |
| US20050139750A1 (en) * | 2003-12-12 | 2005-06-30 | Canon Kabushiki Kaisha | Internal structure of image sensing element |
| CN102938407B (en) * | 2008-03-14 | 2015-06-17 | 郑苍隆 | Light guide array for an image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110767660A (en) * | 2018-07-24 | 2020-02-07 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| CN110767660B (en) * | 2018-07-24 | 2022-09-16 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
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