CN102593138A - CMOS image sensor and manufacturing method thereof - Google Patents
CMOS image sensor and manufacturing method thereof Download PDFInfo
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- CN102593138A CN102593138A CN201210018146XA CN201210018146A CN102593138A CN 102593138 A CN102593138 A CN 102593138A CN 201210018146X A CN201210018146X A CN 201210018146XA CN 201210018146 A CN201210018146 A CN 201210018146A CN 102593138 A CN102593138 A CN 102593138A
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- image sensor
- cmos image
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- metal
- incident light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000002310 reflectometry Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000001914 filtration Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 8
- 230000000295 complement effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000035547 immunodeficiency 105 Diseases 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Abstract
The invention provides a CMOS (Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method of the CMOS image sensor. The CMOS image sensor comprises high-refractive index films and two layers of metal connecting wires, wherein the high-refractive index films for shielding incident light are arranged on the four sides and at the top part of each of the two layers of metal connecting wires. The manufacturing method comprises the steps of implanting As or P ions into a substrate material on the silicon substrate material to form an N-type photoelectric diode; etching the substrate material between photoelectric diodes by using a corrosion process and filling to form shallow trench isolation; depositing a media layer and a metal layer on the substrate surface layer by layer, and taking a composite layer as the media layer of metal; corroding a media material on the surface of the photoelectric diode to form a groove side wall and a groove shape, and forming a layer of high-reflectivity film on the groove side wall and the upper surface of the media outside a groove; and depositing a colorful filter material in the groove and making a micro lens on the colorful filter material. According to the invention, the crosstalk caused by reflection of the incident light between the metal is avoided, and the distance from the incident light to the pixel surface is shortened.
Description
Technical field
The present invention relates to the manufacturing approach of a kind of cmos image sensor and cmos image sensor, belong to the image sensor technologies field.
Background technology
The extensive use of modern imageing sensor is ordered about cmos image sensor to more and more littler size development.Along with dwindling of Pixel Dimensions, parameters such as closely-related with it light sensitive diode electric capacity, sensitivity, quantum efficiency are faced with stern challenge.Therefore, the method or the equipment that make light more effectively to be absorbed by light sensitive diode become one of key factor of small-sized pixel image quality.
Traditional cmos image sensor (dot structure with three-layer metal is an example) is as shown in Figure 1; On P type backing material 100 through photoetching; Ion injects; Traditional integrated circuit fabrication process such as corrosion and diffusion forms photodiode 102, isolates with shallow trench isolation (STI) 101 structures between the photodiode.On photodiode 102, form the metal wire of control signal through sputtering technology.Form dielectric layer as metal and metal through chemical vapor deposition (CVD) technology, the separator of metal and silicon.Photodiode 102 surfaces dielectric layer from bottom to top is ILD-Si
3N
4103a, ILD-SiO
2103b, an IMD105, the 2nd IMD107, the 3rd IMD109a and passivation layer-Si
3 N
4109b, wherein passivation layer-Si
3 N
4109b has two effects, and the one, the protection surface, the 2nd, as the flatness layer of colorful optical filter array 111a and 111b.The first metal wire metal106, the second metal wire metal108, the 3rd metal wire metal110 that between dielectric layer, are distributing and controlling photodiode 102 operate as normal, wherein the first metal wire metal106 is connected through the device that forms on contact hole 104 and the P type epitaxial loayer 100.The important part of imageing sensor another one is colorful optical filter array (color filter array) 111a and 111b; Its effect is that incident light is resolved into three kinds of basic monochromatic light of red, green, blue, is lenticule (micro lens) 112 on color filter array.
The incident light of traditional image transducer is at the bigger optically denser medium Si of refractive index
3N
4The optically thinner medium SiO that 109b and refractive index are less
2During the interface of 109a, total reflection will take place incident light, and (refractive index of Color filter material is about 1.5, dielectric material SiO
2Refractive index is about 1.45, Si
3N
4Refractive index is about 2.0), thus utilization of incident light influenced.Secondly; The conventional image sensor dielectric thickness total from lenticule (micro lens) 112 bottoms to the upper surface of photodiode 102 is about more than 2 microns; So long path channels is unfavorable for that incident light effectively arrives pixel surface; And the traditional image sensor construction can't avoid incident light to arrive metal surface or side, causes through the adjacent photodiode surface of the final arrival of metallic reflection like the incident light among Fig. 1 103 and crosstalks.In addition, dielectric layer (ILD-SiO
2103b, an IMD105, the 2nd IMD107, the 3rd IMD109a) though all be SiO
2Material, but in the integrated circuit technology processing procedure of reality, the deposit of dielectric layer usually adopts different chemical vapor depositions (CVD) equipment and method to accomplish, like plasma chemical vapor deposition (PECVD), low temperature chemical vapor deposition (LPCVD) etc.Therefore, dielectric layer is actual to be a kind of special composite bed, and there is small difference in the refractive index in the layer, when incident light process composite bed, reflection in various degree can take place.
Summary of the invention
The invention provides the manufacturing approach of a kind of cmos image sensor and cmos image sensor; Can effectively incident light be guided to the surface of photodiode; Thereby the sensitivity and the quantum efficiency of photodiode have been improved; This structure sensitization passage and flatness layer have suppressed to reflect in the medium of incident light outside passage simultaneously, thereby have effectively shielded crosstalking of light.
The objective of the invention is to realize through following technical scheme:
A kind of cmos image sensor comprises high reflectivity film and double layer of metal line, the high reflectivity film that is used for shielding incident light be arranged on the double layer of metal line around and the top.
A kind of manufacturing approach of cmos image sensor comprises:
On silicon substrate material, As or P ion are implanted backing material formation N type light sensitive diode through predetermined integrated circuit fabrication process;
Backing material between the adjacent photodiode adopts etching process to etch open and use SiO
2Material is filled and is formed shallow trench isolation;
At substrate surface successively dielectric layer deposited and metal level, at substrate material surface deposit one deck Si
3N
4As trapping layer and anti-reflection layer;
Adopt predetermined technology to process metal one and metal two, with Si
3N
4And SiO
2The composite bed that constitutes is as the dielectric layer of metal level one, with the SiO that is mixed with boron and phosphorus
2Dielectric layer as metal level two;
The dielectric material of photodiode surface is corroded to Si
3N
4Upper surface forms recess sidewall and groove-like, forms one deck high reflectivity film in said recess sidewall and groove external agency upper surface;
Deposit colorized optical filtering sheet material and on the colorized optical filtering sheet material, make lenticule in said groove.
Technical scheme by the invention described above provides can be found out; The high reflectivity film that the present invention adopts surrounds metal level; Effectively avoided incident light in the intermetallic reflection and crosstalking of causing; This structural images transducer only adopts the double layer of metal line, and the metal connecting line of attenuate and dielectric layer have effectively shortened the distance of incident light arrival pixel surface.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skill in the art; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a cmos image sensor photosensitive structure sketch map of the prior art;
The cmos image sensor structural representation that Fig. 2 provides for the specific embodiment of the invention;
Optical path of incident light sketch map in the cmos image sensor that Fig. 3 provides for the specific embodiment of the invention;
The cmos image sensor that Fig. 4-Fig. 7 provides for embodiment of the present invention is made shaping schematic view step by step.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills belong to protection scope of the present invention not making the every other embodiment that is obtained under the creative work prerequisite.
This embodiment provides a kind of cmos image sensor, and is as shown in Figure 2, comprises high reflectivity film 207 and double layer of metal line 204, the high reflectivity film 207 that is used for shielding incident light be arranged on double layer of metal line 204 around and the top.
Concrete, this embodiment is on the basis of traditional cmos image sensor, to adopt double layer of metal line 204, and metal connecting line 204 and dielectric layer all carry out attenuate, and therefore, the distance that incident light arrives photodiode surface can shorten 1um-2um.Metal connecting line 204 around and deposited on top one deck high reflectivity film 207, be used for shielding incident light and crosstalk because of what metal layer reflection caused.The surface deposition of photodiode the higher relatively Si of refractive index
3N
4Film 201 is as anti-reflection layer, and the colorful optical filter array 208 that distributing above the anti-reflection layer places the surface of photodiode 102 with colorful optical filter array 208, has avoided incident light in different medium, to reflect on the one hand, and the while has also been simplified technology.And the existing C mos image sensor is identical among P type backing material 100, shallow trench isolation 101, photodiode 102, contact hole 202 and lenticule 209 in the cmos image sensor that this embodiment provides and Fig. 1, no longer applies at this and states.
Further specify the structure of the cmos image sensor of this embodiment in conjunction with Fig. 3 incident light sketch map; First incident light 301 and second incident light 302 are incident lights of two bundle diverse locations; First incident light 301 incides the surface of high reflectivity film 207 through colorful optical filter array 208 with certain angle of inclination; Thereby high reflectivity film 207 has high reflection reflects first incident light 301, and reflection back light arrives colorful optical filter array material 208 and antireflective film Si
3N
4The 201a interface, boundary material Si
3N
4Refractive index (being about 2.0) be higher than the refractive index (being about 1.5) of colour filter array material, so the refraction back takes place and arrives photodiode 102 surfaces in light at this interface.Above the high reflectivity film 207 of metal level top, the high reflectivity film 207 of high reflectance reflects it to second incident light 302 with certain angular illumination, arrives metal surface and side thereby suppressed incident light.
This embodiment also provides a kind of manufacturing approach of cmos image sensor, and concrete steps are following:
As shown in Figure 4, at first select silicon substrate material 100, generally be extension doped with P type silicon on the heavy doping P type silicon, through traditional integrated circuit fabrication process such as photoetching, injection, diffusions As or P ion are implanted formation N type photodiode 102 in the backing material 100.Backing material between the adjacent photodiode adopts etching process to etch open and use SiO
2Material is filled and is formed shallow trench isolation 101; Secondly, as shown in Figure 5 at substrate surface successively dielectric layer deposited and metal level, sustain damage when follow-up contact hole 202 corrosion in order to prevent silicon face, need be at the Si of the about 35-40nm of backing material 100 surface depositions
3N
4201a is as medium SiO
2Trapping layer during the 201b corrosion, Si simultaneously
3 N
4201a also gets into the anti-reflection layer of photodiode 102 as incident light.In order to make the smooth covering of insulating barrier, need be at SiO
2Add B or P among the 201b improving its flowability, on the technology with Si
3N
4201a and SiO
2The composite bed that 201b constitutes is called inter-level dielectric (ILD), in order to the separator of polysilicon electrode and the insulating barrier of contact hole 202.On inter-level dielectric (ILD) surface, adopt technologies such as sputter, photoetching, corrosion to form metal connecting line 204; Form the insulating barrier 203 of isolating metal line 204 through technologies such as deposit, photoetching, corrosion; After photoetching, corrosion, on insulating barrier 203, form intercommunicating pore again, adopt metal connecting line 204 to form second metal connecting line 206 and second insulating barrier 205 more from top to bottom successively again with insulating barrier 203 identical technologies.
Then, adopt dry etching that the dielectric material on photodiode 102 surfaces is corroded to Si
3N
4The 201a upper surface, the structure after the etching is as shown in Figure 6, and this embodiment is defined as path channels with 601.Adopt technologies such as chemical vapor deposition and corrosion to form one deck high reflectivity film 207 again at path channels 601 sidewalls and medium second insulating barrier 205 upper surfaces, as shown in Figure 7.Deposit colorized optical filtering sheet material in path channels 601 at last, and on the colorized optical filtering sheet material, make lenticule, the cmos image sensor of processing is as shown in Figure 2.
Can find out from structure shown in Figure 2; The high reflectivity film layer surrounds metal connecting line; Effectively avoided incident light in the intermetallic reflection and crosstalking of causing, this structural images transducer adopts the metal connecting line and the dielectric layer of attenuate, has effectively shortened the distance that incident light arrives pixel surface.The reflection that this structural images transducer has avoided incident light to cause because of medium refraction index difference the dielectric material of colour filter array material substitution traditional structure.The anti-reflection layer membrane shield on this structural images sensor pixel surface reflection of light, thereby improved the utilization ratio of incident light.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. a cmos image sensor comprises high reflectivity film and double layer of metal line, it is characterized in that, the high reflectivity film that is used for shielding incident light be arranged on the double layer of metal line around and the top.
2. cmos image sensor according to claim 1 is characterized in that the photodiode surface of said cmos image sensor is deposited with one deck high refractive index film.
3. cmos image sensor according to claim 2 is characterized in that, said high refractive index film adopts Si
3N
4
4. cmos image sensor according to claim 2 is characterized in that said high refractive index film is provided with colour filter array.
5. the manufacturing approach of a cmos image sensor is characterized in that, comprising:
On silicon substrate material, As or P ion are implanted backing material formation N type photodiode through predetermined integrated circuit fabrication process;
Backing material between the adjacent photodiode adopts etching process to etch open and use SiO
2Material is filled and is formed shallow trench isolation;
At substrate surface successively dielectric layer deposited and metal level, at substrate material surface deposit one deck Si
3N
4As trapping layer and anti-reflection layer;
Adopt predetermined technology to process metal one and metal two, with Si
3N
4And SiO
2The composite bed that constitutes is as the dielectric layer of metal level one, with the SiO that is mixed with boron and phosphorus
2Dielectric layer as metal level two;
The dielectric material of photodiode surface is corroded to Si
3N
4Upper surface forms recess sidewall and groove-like, forms one deck high reflectivity film in said recess sidewall and groove external agency upper surface;
Deposit colorized optical filtering sheet material and on the colorized optical filtering sheet material, make lenticule in said groove.
6. the manufacturing approach of cmos image sensor according to claim 5 is characterized in that, said silicon substrate material adopts extension doped with P type silicon on the heavy doping P type silicon.
7. to go the manufacturing approach of 5 described cmos image sensors according to right, it is characterized in that the Si of said substrate material surface deposit
3N
4Thickness is 35-40nm.
8. the manufacturing approach of cmos image sensor according to claim 5 is characterized in that, said SiO
2Add B or P in the material.
9. the manufacturing approach of cmos image sensor according to claim 5 is characterized in that, said recess sidewall and groove external agency upper surface form one deck high reflectivity film.
10. the manufacturing approach of cmos image sensor according to claim 5 is characterized in that, said inside grooves filling color filter material.
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|---|---|---|---|
| CN201210018146.XA CN102593138B (en) | 2012-01-19 | 2012-01-19 | CMOS image sensor and manufacturing method thereof |
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|---|---|---|---|
| CN201210018146.XA CN102593138B (en) | 2012-01-19 | 2012-01-19 | CMOS image sensor and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102593138A true CN102593138A (en) | 2012-07-18 |
| CN102593138B CN102593138B (en) | 2014-09-17 |
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Cited By (10)
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| CN103824868A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof |
| CN104009048A (en) * | 2013-02-26 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor and preparation method thereof |
| CN105281737A (en) * | 2014-06-25 | 2016-01-27 | 福特全球技术公司 | Proximity switch assembly having groove between adjacent proximity sensors |
| CN107579166A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | Display panel, display device and display panel preparation method |
| CN108336064A (en) * | 2018-01-30 | 2018-07-27 | 德淮半导体有限公司 | Test device, the manufacturing method of test device and test method |
| CN103000647B (en) * | 2012-10-25 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of CMOS image sensor optical enhancement structure and preparation method |
| CN109786404A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Image sensor devices, image sensor system and forming method thereof |
| CN109950263A (en) * | 2019-03-20 | 2019-06-28 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110649057A (en) * | 2019-09-30 | 2020-01-03 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
| CN111480235A (en) * | 2018-11-23 | 2020-07-31 | 深圳市汇顶科技股份有限公司 | Image sensor and method for manufacturing the same |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000647B (en) * | 2012-10-25 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of CMOS image sensor optical enhancement structure and preparation method |
| CN104009048A (en) * | 2013-02-26 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor and preparation method thereof |
| CN103824868A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof |
| CN105281737A (en) * | 2014-06-25 | 2016-01-27 | 福特全球技术公司 | Proximity switch assembly having groove between adjacent proximity sensors |
| CN107579166A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | Display panel, display device and display panel preparation method |
| CN107579166B (en) * | 2017-08-31 | 2024-04-12 | 京东方科技集团股份有限公司 | Display panel, display device and display panel manufacturing method |
| CN109786404A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Image sensor devices, image sensor system and forming method thereof |
| CN108336064B (en) * | 2018-01-30 | 2020-05-05 | 德淮半导体有限公司 | Test apparatus, method of manufacturing test apparatus, and test method |
| CN108336064A (en) * | 2018-01-30 | 2018-07-27 | 德淮半导体有限公司 | Test device, the manufacturing method of test device and test method |
| CN111480235A (en) * | 2018-11-23 | 2020-07-31 | 深圳市汇顶科技股份有限公司 | Image sensor and method for manufacturing the same |
| CN111480235B (en) * | 2018-11-23 | 2023-10-27 | 深圳市汇顶科技股份有限公司 | Image sensor and method of manufacturing the same |
| CN109950263A (en) * | 2019-03-20 | 2019-06-28 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110649057A (en) * | 2019-09-30 | 2020-01-03 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
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|---|---|
| CN102593138B (en) | 2014-09-17 |
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