CN104900661A - Integrated energy collecting store with three-dimensional stack/trench composite structure - Google Patents
Integrated energy collecting store with three-dimensional stack/trench composite structure Download PDFInfo
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- CN104900661A CN104900661A CN201510349262.3A CN201510349262A CN104900661A CN 104900661 A CN104900661 A CN 104900661A CN 201510349262 A CN201510349262 A CN 201510349262A CN 104900661 A CN104900661 A CN 104900661A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an integrated energy collecting store with a three-dimensional stack/trench composite structure. The integrated energy collecting store is characterized in that an energy collecting store is integrated on a substrate with a PN junction, wherein a P type semiconductor area and an N type semiconductor area of the PN junction are respectively connected with a metal electrode to serve as energy collectors; the three-dimensional stack/trench composite structure is arranged on the side, opposite to the PN junction, of the substrate to serve as an energy store; and the composite structure is characterized in that a three-dimensional trench structure is firstly arranged on the substrate, then metal layers and medium layers are alternatively deposited on the substrate provided with the trench structure to form a plurality of parallelly-connected capacitor, finally the top part is the metal layer which fills the trench and covers the surface of the substrate, and the top metal layer and the bottom metal layer are respectively connected with a metal electrode. By adopting the three-dimensional structure, the capacity of the memory is improved, the cost is reduced, and the size is reduced; in addition, the preparing technology flow is simple and is compatible with a low-cost integrated circuit technology.
Description
Technical field
The present invention relates to energy acquisition and technical field of memory, particularly relate to a kind of integrated energy collection and the stocking system with composite construction.
Background technology
The progress of the integrated circuit technique chip of super low-power consumption application.Because the power consumption of this chip is low, can be powered by the energy source gathered in surrounding environment, form self-supplied electronic system.At present, in this type systematic most, the energy collection device of employing and memory device (as rechargeable battery) are two devices independently separated, and not only volume is large, and cost is high.High cost is the ultimate challenge of current wireless senser and regenerative resource industry, if energy resource collecting and the same device of memory can be realized, i.e. integrated multi-source energy acquisition and energy storage technologies, the various energy resources in environment (light, vibration and radio frequency) can be made to be converted into electric energy simultaneously and to be stored in same device, export regeneration, continual electric energy, make its application system upgrade to automatic power system.This integrated technology can reduce the volume of legacy system greatly, improves system reliability, and reduces costs further.
But integrated needs the how realizing various energy resources transducer and memory faces a series of technical problem, as: select the material of good physical properties reasonable price to ensure the energy conversion that device is good and memory property; Effective Isolated Shield is taked to design to prevent issuable mutual interference between integrated device; Reliable System-in-Package technology and the technological measure ensureing above innovation etc.
Summary of the invention
In order to solve above problems of the prior art, the object of this invention is to provide a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction.
To achieve these goals, technical scheme of the present invention is as follows:
A kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction, it is characterized in that, energy acquisition memory is integrated in be had on the substrate of PN junction, wherein, P type semiconductor district and the N type semiconductor district of PN junction are connected to metal electrode, as energy collecting device; With on the substrate of PN junction opposite face, be provided with three-dimensional storehouse/trench composite construction, as energy accumulator; Described composite construction is specially: on substrate, first arrange three-dimensional moat structures, then on the substrate with moat structures, depositing metal layers and dielectric layer is replaced, form the capacitor of multiple parallel connection, last top is metal level and fills up trench and cover substrate surface, and metal layer at top and bottom metal layers are connected to metal electrode.
The surface of the surface of described energy collecting device or the surface of energy accumulator or these two devices is provided with protective layer, and metal electrode protrudes from the surface of protective layer.
Further, described protective layer is also prepared has radio-frequency (RF) energy to gather antenna.
Described radio-frequency (RF) energy gathers the radio-frequency (RF) energy collecting unit that antenna comprises the hook formation of non-closed, to gather light energy and/or radio-frequency (RF) energy.
Be respectively equipped with heavily doped region in described P type semiconductor district and N type semiconductor district, metal electrode is connected to heavily doped region.
Further, when the bottom metal layers of described composite construction is connected with metal electrode, the place that described metal electrode contacts with dielectric layer with other metal level is also provided with insulating barrier.
The thickness of described every one deck metal level or dielectric layer is 10nm ~ 100nm, and the thickness of described metal layer at top is 50nm ~ 20000nm.
The above-mentioned preparation method with the integrated energy acquisition memory of three-dimensional storehouse/trench composite construction, comprises the steps:
(1) on the substrate of P type or N type semiconductor, form PN junction, then on the contact-making surface in P type semiconductor district and N type semiconductor district, by physical sputtering or other mode conductive metal deposition layers, form metal electrode, as the antenna of energy collecting device;
(2) with on the substrate of PN junction opposite face, etched substrate surface forms moat structures, then prepares bottom metal layers and covers the bottom of described trench and the surface of sidewall and substrate thereof;
(3) in described bottom metal layers, repeatedly alternately prepare dielectric layer and metal level, last top metal deposition layer is full of described trench, forms the capacitor of multiple parallel connection;
(4) metal layer at top described in partial etching and dielectric layer are to the upper surface of described bottom metal layers, to form through hole, then in the surface and through hole of described metal layer at top, prepare metal, form metal electrode respectively.
The present invention, by three dimensional design, is integrated with energy collecting device and memory in same substrate, and effectively light energy conversion is the function of electric energy storage of electrical energy by realization, reduces the volume of device, greatly reduces cost.The composite construction that its energy accumulator (battery) adopts three-dimensional moat structures and stack layer to combine, forms high efficiency three-dimensional energy memory, improves memory capacity.Meanwhile, preparation technology's flow process of the present invention is simple, can with low cost integrated circuit process compatible, be with a wide range of applications.
Accompanying drawing explanation
Fig. 1 is the structural representation of integrated system of the present invention;
Fig. 2 is the structural representation of radio-frequency antenna in embodiment.
Embodiment
The structure of the integrated energy acquisition memory of the present embodiment as shown in Figure 1, energy acquisition memory be integrated in there is PN junction substrate on 1, wherein, be provided with P type doped region 2 in P type semiconductor district, ion is chosen as boron (B) ion or boron fluoride (BF
2) ion etc., be provided with N-type doped region 3 in N type semiconductor district, its ion is argon (Ar) ion or phosphorus (P) ion etc.Protective layer 5 covers on the substrate surface of PN junction, and material can be silicon nitride (Si
xn
y) or silica (SiO
z) etc. there is the isolation material of high-k.Metal electrode 4 runs through protective layer 5 and is connected respectively to two heavily doped regions, and material is the metal materials such as aluminium (Al).On the surface of protective layer 5, also preparation has radio-frequency (RF) energy to gather antenna 6; it is mainly used for collecting energy; namely this radio-frequency (RF) energy gathers antenna 6 and can be used for gathering the various forms of energy such as such as radio-frequency (RF) energy, and is sent in energy collecting device by the energy collected and carries out transforming and being stored in energy accumulator.
On the another side of substrate 1, be provided with three-dimensional storehouse/trench composite construction, namely on the substrate with moat structures, depositing metal layers 7 and dielectric layer 8 is replaced, form the capacitor (two that are shown as prepared by the present embodiment in Fig. 1 in parallel capacitor) of multiple parallel connection, last top depositing metal layers fill up trench and cover substrate surface again.Surface be also provided with layer protective layer 10, radio-frequency antenna 6 also can be arranged on the surface of this protective layer 10.Metal electrode 11 runs through protective layer 10 and is connected to metal layer at top 9.Metal electrode 12 is connected to bottom metal layers after running through protective layer 10, metal layer at top 9, dielectric layer 8, other metal levels 7 respectively, is also provided with insulating barrier 13 in the outside of metal electrode 12.
Wherein, the material of bottom metal layers can be cobalt silicide (CoSi
2) etc. metal silicide, the material of dielectric layer 8 then can be the oxide material such as hafnium oxide (HfO) or tantalum oxide (TaO), the material of metal layer at top 9 then can be aluminium (Al), copper (Cu), silver (Ag), gold (Au) or other metals, and the material of metal electrode 11 and metal electrode 12 then can be aluminium (Al), silver (Ag), gold (Au) or other metals.
The thickness range of every one deck metal level 7 and dielectric layer 8 can be 10nm ~ 100nm; the thickness range of metal layer at top 9 then can be 50nm ~ 20000nm; the altitude range of metal electrode 11 and metal electrode 12 then can be 1000nm ~ 20000nm; the thickness range of insulating barrier 13 then can be 10nm ~ 100nm, and the thickness range of protective layer 10 then can be 10nm ~ 20000nm.
The concrete steps that the present embodiment prepares integrated energy acquisition memory are:
(1) on the surface with P-type silicon substrate 1, spin coating photoresist 14, and unnecessary photoresist is removed after solidification development, form the figuratum mask of tool, adopt ion implantation technology techniques such as (or) solid diffusion and annealing process successively, close in P type semiconductor district in the subregion of the front face surface side of substrate 1 and form N type semiconductor district.
(2) utilize mask technique, in N type semiconductor district and in P type semiconductor district, carry out N-type ion and P type ion implantation technology techniques such as (or) solid diffusion respectively, to form N+ doped region 3 and P+ doped region 2.
(3) continue at this substrate surface Deposition of protective layer 5, this protective layer 5 preferably can be anti-reflecting layer, and material is chosen as silicon nitride (Si
xn
y) or silica (SiO
z), as materials such as silicon dioxide.Utilize photoetching process, etch the partial protection layer be positioned on P type doped region 2 and surface, N-type doped region 3, the part surface of two doped regions is exposed, and then plated metal, prepare two metal electrodes 4, complete the preparation technology of energy collecting device.
(4) continue structure obtained above to overturn, be fixed on the carrying wafer that provides in advance, first carry out thinning to the another side of substrate 1, adopt photoetching, etching technics successively, this one side in substrate 1 adopts such as plasma etch process part to remove the substrate being arranged in P type semiconductor district, to close in its back side surface area the groove (trenches) forming upward opening (namely along substrate 1 front face surface to its backside surface bearing of trend) in substrate 1.
(5) such as CoSi is adopted
2deng the material such as metal silicide or metal, preparation bottom metal layers 7, the bottom of its covering groove and sidewall thereof, and this bottom metal layers 7 also covers on the remaining backside surface of substrate 1; Continuation alternating deposit dielectric layer 8 and metal level 7 cover on the exposed surface of bottom metal layers, finally deposit such as aluminium (Al), copper (Cu), silver (Ag), gold (Au) or other metal materials and be full of above-mentioned groove, form metal layer at top 9 (this metal layer at top 9 can be used as the top electrodes of energy accumulator), this metal layer at top 9 also covers the upper surface of the dielectric layer 8 be positioned at outside groove.
(6) silicon nitride (Si is adopted
xn
y) or silica (SiO
z) etc. material prepare protective layer 10 on the surface of metal layer at top 9, and continue through photoetching, etching technics, the part surface of metal layer at top 9 and bottom metal layers 7 is exposed, then the techniques such as such as evaporation or plasma-deposited or chemical vapor deposition are utilized, adopt the isolation material such as silicon nitride or silica, cover on the sidewall of the through hole running through protective layer 10, metal layer at top 9, dielectric layer 8 and other metal levels 7; Last plated metal, forms metal electrode 11 and metal electrode 12.
(7) after removing above-mentioned carrying wafer, namely the main body preparation technology of this exemplary energy memory is completed, follow-up carry out peripheral circuit preparation after, described energy accumulator is electrically connected with energy collecting device, to form the integrated energy acquisition memory structure in the present embodiment.
Radio-frequency antenna 6 is mainly used for collecting energy, various forms of energy such as such as radio-frequency (RF) energy etc., and is sent in energy collecting device by the energy collected and carries out transforming and be stored in energy accumulator; Accordingly, the energy stored in energy accumulator can also be carried out energy transmission in such as radio signal mode by radio-frequency antenna 6, and then realizes the wireless charging to other device architectures.In order to improve efficiency and the scope of radio-frequency antenna 6 energy acquisition, this radio-frequency antenna can be set in the present embodiment as shown in Figure 2 comprise the structures such as the radio-frequency (RF) energy collecting unit of the hook formation of non-closed.Radio-frequency antenna 6 can be arranged on protective layer 5; also can be arranged on protective layer 10; in concrete technical process; can according to concrete demand or device architecture feature; it also this radio-frequency antenna 6 can be arranged on other regions, as long as can be conducive to realizing the collection of the various forms energy such as such as photoelectricity or send.
Claims (10)
1. one kind has the integrated energy acquisition memory of three-dimensional storehouse/trench composite construction, it is characterized in that, energy acquisition memory is integrated in be had on the substrate of PN junction, wherein, P type semiconductor district and the N type semiconductor district of PN junction are connected to metal electrode, as energy collecting device; With on the substrate of PN junction opposite face, be provided with three-dimensional storehouse/trench composite construction, as energy accumulator; Described composite construction is specially: on substrate, first arrange three-dimensional moat structures, then on the substrate with moat structures, depositing metal layers and dielectric layer is replaced, form the capacitor of multiple parallel connection, last top is metal level and fills up trench and cover substrate surface, and metal layer at top and bottom metal layers are connected to metal electrode.
2. a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction according to claim 1; it is characterized in that; the surface of the surface of described energy collecting device or the surface of energy accumulator or these two devices is provided with protective layer, and metal electrode protrudes from the surface of protective layer.
3. a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction according to claim 2, is characterized in that, described protective layer is also prepared has radio-frequency (RF) energy to gather antenna.
4. a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction according to claim 3, it is characterized in that, described radio-frequency (RF) energy gathers the radio-frequency (RF) energy collecting unit that antenna comprises the hook formation of non-closed, to gather light energy and/or radio-frequency (RF) energy.
5. a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction according to claim 1, it is characterized in that, be respectively equipped with heavily doped region in described P type semiconductor district and N type semiconductor district, metal electrode is connected to heavily doped region.
6. a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction according to claim 1, it is characterized in that, when the bottom metal layers of described composite construction is connected with metal electrode, the place that described metal electrode contacts with dielectric layer with other metal level is also provided with insulating barrier.
7. according to a kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction one of claim 1 to 6 Suo Shu, it is characterized in that, the thickness of described every one deck metal level or dielectric layer is 10nm ~ 100nm, and the thickness of described metal layer at top is 50nm ~ 20000nm.
8. there is a preparation method for the integrated energy acquisition memory of three-dimensional storehouse/trench composite construction as claimed in claim 1, it is characterized in that, comprise the steps:
(1) on the substrate of P type or N type semiconductor, form PN junction, then on the contact-making surface in P type semiconductor district and N type semiconductor district, by physical sputtering or other mode conductive metal deposition layers, form metal electrode, as the antenna of energy collecting device;
(2) with on the substrate of PN junction opposite face, etched substrate surface forms moat structures, then prepares bottom metal layers and covers the bottom of described trench and the surface of sidewall and substrate thereof;
(3) in described bottom metal layers, repeatedly alternately prepare dielectric layer and metal level, last top metal deposition layer is full of described trench, forms the capacitor of multiple parallel connection;
(4) metal layer at top described in partial etching and dielectric layer are to the upper surface of described bottom metal layers, to form through hole, then in the surface and through hole of described metal layer at top, prepare metal, form metal electrode respectively.
9. preparation method according to claim 8; it is characterized in that; in the PN junction substrate surface of step (1) or prepare matcoveredn on the capacitor surface of step (3); metal electrode protrudes from the surface of protective layer, and on the surface of protective layer, also preparation has radio-frequency antenna.
10. preparation method according to claim 8 or claim 9, is characterized in that, in step (1), in described P type semiconductor district and N type semiconductor district, preparation has heavily doped region respectively, and metal electrode is connected to heavily doped region.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428357A (en) * | 2015-12-23 | 2016-03-23 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593759A (en) * | 2008-05-27 | 2009-12-02 | 伍彪 | A kind of novel solar battery |
| CN101989621A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor and manufacturing method thereof |
| CN103066146A (en) * | 2012-09-07 | 2013-04-24 | 陈远宁 | Multisource energy source collection and storage integrated system and preparation method thereof |
| US20130316486A1 (en) * | 1999-03-30 | 2013-11-28 | Daniel Lunch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| CN204720450U (en) * | 2015-06-23 | 2015-10-21 | 宁波微能物联科技有限公司 | A kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction |
-
2015
- 2015-06-23 CN CN201510349262.3A patent/CN104900661B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130316486A1 (en) * | 1999-03-30 | 2013-11-28 | Daniel Lunch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| CN101593759A (en) * | 2008-05-27 | 2009-12-02 | 伍彪 | A kind of novel solar battery |
| CN101989621A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor and manufacturing method thereof |
| CN103066146A (en) * | 2012-09-07 | 2013-04-24 | 陈远宁 | Multisource energy source collection and storage integrated system and preparation method thereof |
| CN204720450U (en) * | 2015-06-23 | 2015-10-21 | 宁波微能物联科技有限公司 | A kind of integrated energy acquisition memory with three-dimensional storehouse/trench composite construction |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428357A (en) * | 2015-12-23 | 2016-03-23 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
| CN105428357B (en) * | 2015-12-23 | 2018-07-27 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
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